Preface to Special Issues on Recent Progress on Optical Functional Semiconductors Based on Group 14 Elements Reviewed

TERAI Yoshikazu

The Review of Laser Engineering ( The Laser Society of Japan )   50 ( 10 )   558   2022.01

Enhanced Valley Splitting of Exciton Emission in Colloidal PbSe Quantum Dots When the Interdot Distance Coincides with Onset of Förster Resonance Energy Transfer Reviewed International journal

Takahisa Omata, Hiroshi Asano, Masahiro Sakai, Yoshikazu Terai, and Masao Kita

Journal of Physical Chemistry Letters   12 ( 12 )   3120 - 3126   2021.03

Photoreflectance spectra of highly-oriented Mg2Si(111)//Si(111) films Reviewed International journal

Y. Terai, H. Hoshida, R. Kinoshita, A. Shevlyagin, I. Chernev and A. Gouralnik

Japanese Journal of Applied Physics : Conference Proceedings   8   011004/1 - 011004/4   2020.08

Significant enhancement of photoresponsivity in As-doped n-BaSi2 epitaxial films by atomic hydrogen passivation Reviewed International journal

Sho Aonuki, Yudai Yamashita, Takuma Sato, Zhihao Xu, Kazuhiro Gotoh , Kaoru Toko , Yoshikazu Terai, Noritaka Usami, and Takashi Suemasu

Applied Physics Express   13 ( 5 )   051001/1 - 051001/4   2020.04

Probing the Mg2Si/Si(111) heterojunction for photovoltaic applications Reviewed International journal

Alexander Shevlyagin, Igor Chernev, Nikolay Galkin, Andrey Gerasimenko, Anton Gutakovskii, Hirofumi Hoshida, Yoshikazu Terai, Naofumi Nishikawa, Keisuke Ohdaira

Solar Energy   211   383 - 395   2020.04

Photoluminescence properties of polycrystalline β-FeSi2 grown by RF magnetron sputtering Reviewed International journal

Yoshikazu Terai, Hiroki Nishi and Naohiro Oka

Japanese Journal of Applied Physics   59 ( SF )   SFFC01   2020.01

Investigation of defect levels in BaSi2 epitaxial films by photoluminescence and the effect of atomic hydrogen passivation Reviewed

Louise Benincasa, Hirofumi Hoshida, Tianguo Deng, Takuma Sato, Zhihao Xu, Kaoru Toko, Yoshikazu Terai and Takashi Suemasu

Journal of Physics Communications   3 ( 7 )   075005/1 - 075005/4   2019.07

Polarized Raman spectra of β -FeSi<inf>2</inf> epitaxial film grown by molecular beam epitaxy Reviewed

Terai Y., Yamaguchi H., Tsukamoto H., Murakoso N., Hoshida H.

AIP Advances   8 ( 10 )   2018.10

Detection of local vibrational modes induced by intrinsic defects in undoped BaSi<inf>2</inf> light absorber layers using Raman spectroscopy Reviewed

Sato T., Hoshida H., Takabe R., Toko K., Terai Y., Suemasu T.

Journal of Applied Physics   124 ( 2 )   2018.07

Growth of Ru<inf>2</inf>Si<inf>3</inf> polycrystalline thin films by solid phase epitaxy in Ru-Si amorphous layers Reviewed

Setojima K., Ikeda S., Ogi K., Terai Y.

Defect and Diffusion Forum   386 DDF   33 - 37   2018.01

Growth of Sb-doped β-FeSi<inf>2</inf> epitaxial films and optimization of donor activation conditions Reviewed

Eguchi H., Iinuma M., Hoshida H., Murakoso N., Terai Y.

Defect and Diffusion Forum   386 DDF   38 - 42   2018.01

Identification of vibrational modes in BASi<inf>2</inf> epitaxial films by infrared and Raman spectroscopy Reviewed

Hoshida H., Murakoso N., Suemasu T., Terai Y.

Defect and Diffusion Forum   386 DDF   43 - 47   2018.01

Photoluminescence spectroscopy investigation of epitaxial Si/GaSb nanocrystals/Si heterostructure Reviewed

Goroshko D., Shevlyagin A., Chusovitin E., Dotsenko S., Gutakovskii A., Iinuma M., Terai Y., Subbotin E., Galkin N.

AIP Conference Proceedings   1874   2017.09

Stress-induced indirect to direct band gap transition in β -FeSi<inf>2</inf>nanocrystals embedded in Si Reviewed

Shevlyagin A., Goroshko D., Chusovitin E., Balagan S., Dotsenko S., Galkin K., Galkin N., Shamirzaev T., Gutakovskii A., Iinuma M., Terai Y.

AIP Conference Proceedings   1874   2017.09

Dependence of direct transition energy on growth temperature in β-FeSi2 epitaxial films Reviewed

Motoki Iinuma, Hiroaki Tsukamoto, Naoki Murakoso, Haruki Yamaguchi and Yoshikazu Terai

Japanese Journal of Applied Physics : Conference Proceedings   5   011106/1 - 011106/5   2017.05

Growth of p-type β-FeSi2 polycrystalline films by RF magnetron sputtering Reviewed

Shuya Ikeda, Kazuya Ogi, Tetsu Hattori, Takahiko Higashi, and Yoshikazu Terai

Japanese Journal of Applied Physics : Conference Proceedings   5   011204/1 - 011204/4   2017.05

Polarized Raman spectra of BaSi2 epitaxial film grown by molecular beam epitaxy Reviewed

Yoshikazu Terai, Haruki Yamaguchi, Hiroaki Tsukamoto, Naoki Murakoso, Motoki Iinuma, and Takashi Suemasu

Japanese Journal of Applied Physics   56   05DD02/1 - 05DD02/4   2017.04

Structural and electrical properties of β-FeSi2 polycrystalline films with low electron density Invited Reviewed

Yoshikazu Terai, Takahiko Higashi, Tetsu Hattori, Kazuya Ogi, and Shuya Ikeda

Japanese Journal of Applied Physics   56   05DD03/1 - 05DD03/5   2017.04

A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm Reviewed

A. V. Shevlyagin, D. L. Goroshko, E. A. Chusovitin, S. A. Balagan, S. A. Dotcenko, K. N. Galkin, N. G. Galkin, T. S. Shamirzaev, A. K. Gutakovskii, A. V. Latyshev, M. Iinuma, and Y. Terai

Journal of Applied Physics   121 ( 11 )   113101/1 - 113101/9   2017.03

Ion channeling measurements of β-FeSi₂ films epitaxially grown on Si(111) and their analysis by multiple scattering theory Reviewed

Fuchi Masaya, Arima Mikihiro, Narumi Kazumasa, Terai Yoshikazu, Maeda Yoshihito

JJAP Conference Proceedings ( The Japan Society of Applied Physics )   5 ( 0 )   011104 - 011104   2017.01

Dependence of direct transition energy on growth temperature in β-FeSi₂ epitaxial films Reviewed

Iinuma Motoki, Tsukamoto Hiroaki, Murakoso Naoki, Yamaguchi Haruki, Terai Yoshikazu

JJAP Conference Proceedings ( The Japan Society of Applied Physics )   5 ( 0 )   011106 - 011106   2017.01

Growth of p-type β-FeSi₂ polycrystalline films by RF magnetron sputtering Reviewed

Ikeda Shuya, Ogi Kazuya, Hattori Tetsu, Higashi Takahiko, Terai Yoshikazu

JJAP Conference Proceedings ( The Japan Society of Applied Physics )   5 ( 0 )   011204 - 011204   2017.01

Time of Fright method for Work function measurement Reviewed

Muto Masao, Tsuno Katsushige, Yonezawa Takeshi, Terai Yoshikazu, Nishiyama Hiroshi

Abstract of annual meeting of the Surface Science of Japan ( The Japan Society of Vacuum and Surface Science )   36 ( 0 )   337   2016.01

Analysis of multiple ion scattering in beta-FeSi2 films with equivalent domains epitaxially grown on Si(111) Reviewed

Fuchi Masaya, Arima Mikihiro, Terai Yoshikazu, Narumi Kazumasa, Maeda Yoshihito

Abstract of annual meeting of the Surface Science of Japan ( The Japan Society of Vacuum and Surface Science )   36 ( 0 )   134   2016.01

Effects of lattice deformations on Raman spectra in β-FeSi2 epitaxial films Reviewed

Yoshikazu Terai, Haruki Yamaguchi, Hiroaki Tsukamoto, Tetsu Hattori, and Takahiko Higashi

Japanese Journal of Applied Physics : Conference Proceedings   3   011109-1 - 011109-5   2015.06

Time-resolved photoluminescence properties of ion-beam-synthesized β-FeSi2 and Si-implanted Si Invited Reviewed

Yoshikazu TERAI and Yoshihito MAEDA

Japanese Journal of Applied Physics   54 ( 7 )   07JB05-1 - 07JB05-5   2015.05

In situ Eu doping into Al<inf>x</inf>Ga<inf>1-x</inf>N grown by organometallic vapor phase epitaxy to improve luminescence properties Reviewed

Koizumi A., Kawabata K., Lee D.G., Nishikawa A., Terai Y., Ofuchi H., Honma T., Fujiwara Y.

Optical Materials   41   75 - 79   2015.01

Foreword: Semiconducting silicides green technology Reviewed

Terai Y.

Japanese Journal of Applied Physics   54 ( 7 )   2015.01

Sputtering-assisted metal-organic chemical vapor deposition of Yb-doped ZnO for photonic conversion in Si solar cells Reviewed

11 ( 7-8 )   1292 - 1295   2014.01

Conduction properties of β-FeSi2 epitaxial films with low carrier density Reviewed

Terai Y., Suzuki N., Noda K., Fujiwara Y.

Physica Status Solidi (C) Current Topics in Solid State Physics   10 ( 12 )   1696 - 1698   2013.12

Formation of Eu³⁺ luminescent centers in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition Reviewed

52 ( 11 PART 1 )   2013.11

Luminescence properties of Eu-doped GaN grown on GaN substrate Reviewed

52 ( 8 PART 2 )   2013.08

Control of Eu luminescence centers by codoping of Mg and Si into Eu-doped GaN Reviewed

52 ( 8 PART 2 )   2013.08

Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy Reviewed

102 ( 14 )   2013.04

Growth condition dependence of Ge-doped β-FeSi2 epitaxial film by molecular beam epitaxy Reviewed

Noda K., Terai Y., Fujiwara Y.

Journal of Crystal Growth   378   376 - 380   2013.01

Advanced materials design of rare-earth-doped semiconductors by organometallic vapor phase epitaxy Reviewed

261 - 272   2013.01

Concentration quenching in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition Reviewed

Tsuji T., Terai Y., Kamarudin M.H.B., Yoshida K., Fujiwara Y.

Journal of Luminescence   132 ( 12 )   3125 - 3128   2012.12

Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy Reviewed

Sasaki H., Hisaka T., Kadoiwa K., Terai Y., Fujiwara Y.

IEICE Electronics Express   9 ( 20 )   1592 - 1597   2012.11

Hybrid mesoporous-silica materials functionalized by Pt^II complexes: Correlation between the spatial distribution of the active center, photoluminescence emission, and photocatalytic activity Reviewed

18 ( 36 )   11371 - 11378   2012.09

Photoluminescence properties of Sm-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition Reviewed

358 ( 17 )   2443 - 2445   2012.09

Effect of residual impurities on transport properties of β-FeSi 2 epitaxial films grown by molecular beam epitaxy Reviewed

Terai Y., Yoneda K., Noda K., Miura N., Fujiwara Y.

Journal of Applied Physics   112 ( 1 )   2012.07

Eu luminescence center created by Mg codoping in Eu-doped GaN Reviewed

Lee D.G., Nishikawa A., Terai Y., Fujiwara Y.

Applied Physics Letters   100 ( 17 )   2012.04

Optical Properties in Eu-doped GaN by Organometallic Vapor Phase Epitaxy and its Application to GaN-based Red Light-emitting Diodes Reviewed

NISHIKAWA Atsushi, TERAI Yoshikazu, FUJIWARA Yasufumi

Journal of the Japanese Association of Crystal Growth   38 ( 4 )   270 - 273   2012.01

Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy Invited Reviewed

Nishikawa A., Furukawa N., Lee D.G., Kawabata K., Matsuno T., Terai Y., Fujiwara Y.

Materials Research Society Symposium Proceedings   1342   9 - 14   2012.01

Growth condition dependence of direct bandgap in β-FeSi2 epitaxial films grown by molecular beam epitaxy Reviewed

23   5 - 8   2012.01

Recent progress in red light-emitting diodes with Eu-Doped GaN Reviewed

2   721 - 724   2011.12

Improvement of crystalline quality in GaAs layer grown on thermal cyclic annealed SOS Reviewed

60 ( 11 )   998 - 1003   2011.11

Bandgap modifications by lattice deformations in β-FeSi2 epitaxial films Invited Reviewed

Terai Y., Noda K., Yoneda K., Udono H., Maeda Y., Fujiwara Y.

Thin Solid Films   519 ( 24 )   8468 - 8472   2011.10

Preface Reviewed

Maeda Y., Terai Y., Homewood K.P., Takarabe K., Yamaguchi K., Suzuki M., Sadoh T., Nakamura Y.

Thin Solid Films   519 ( 24 )   2011.10

Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111) Reviewed

519 ( 24 )   8461 - 8467   2011.10

Photoluminescence and photoreflectance studies in Si/β-FeSi 2/Si(001) double heterostructure Reviewed

Yoneda K., Terai Y., Noda K., Miura N., Fujiwara Y.

Physics Procedia   11   185 - 188   2011.06

Temperature dependence of direct transition energies in β-FeSi 2 epitaxial films on Si(111) substrate Reviewed

Noda K., Terai Y., Yoneda K., Fujiwara Y.

Physics Procedia   11   181 - 184   2011.06

Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy Reviewed

33 ( 7 )   1071 - 1074   2011.05

Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy Reviewed

208 ( 2 )   445 - 448   2011.02

Photoluminescence properties of Eu3+ ions in Eu-doped ZnO grown by sput- tering-assisted metalorganic chemical vapor deposition Reviewed

Terai Y., Yoshida K., Kamarudin M.H., Fujiwara Y.

Physica Status Solidi (C) Current Topics in Solid State Physics   8 ( 2 )   519 - 521   2011.02

Exciton spin dynamics in CdTe/ZnTe quantum structures Reviewed

248 ( 2 )   389 - 392   2011.02

Recent progress in rare-earth-doped semiconductors Invited Reviewed

Fujiwara Y., Nishikawa A., Terai Y.

2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010   2010.12

Growth temperature dependence of EU-doped GaN grown by organometallic vapor phase epitaxy Reviewed

59 ( 9 )   671 - 674   2010.09

Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition Reviewed

42 ( 10 )   2834 - 2836   2010.09

Photoluminescence properties of Eu-Doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition Reviewed

59 ( 9 )   690 - 693   2010.09

Photoluminescence properties of Er-doped β-FeSi2 grown by ion implantation Reviewed

Terai Y., Tsuji T., Noda K., Fujiwara Y.

Physica E: Low-Dimensional Systems and Nanostructures   42 ( 10 )   2846 - 2848   2010.09

Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy Reviewed

7 ( 7-8 )   2040 - 2042   2010.08

Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy Reviewed

97 ( 5 )   2010.08

Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy Reviewed International journal

Konaka Y., Ono K.I., Terai Y., Fujiwara Y.

Journal of Crystal Growth   312 ( 14 )   2056 - 2059   2010.07

Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE Reviewed

207 ( 6 )   1397 - 1399   2010.06

Improved Eu luminescence properties in eu-doped gan grown on gan substrates by organometallic vapor phase epitaxy Reviewed

49 ( 4 PART 1 )   0480011 - 0480012   2010.04

Anisotropic spin dynamics of confined electrons in CdTe/ZnTe quantum structures Reviewed

81 ( 12 )   2010.03

Present status and prospects of rare-earth-doped semiconductors Reviewed

FUJIWARA Yasufumi, TERAI Yoshikazu, NISHIKAWA Atsushi

79 ( 1 )   25 - 31   2010.01

Optical properties of Eu-implanted GaN and related-alloy semiconductors Reviewed

Nishikawa A., Kasai H., Kawasaki T., Terai Y., Fujiwara Y.

Journal of Physics: Conference Series   191   2009.12

Luminescence properties in Er, O-codoped GaAs light-emitting devices with double excitation mechanism Reviewed

1111   143 - 148   2009.11

Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor deposition Reviewed

27 ( 5 )   2248 - 2251   2009.10

Epitaxial growth of Al-doped β-FeSi2on Si(111) substrate by reactive deposition epitaxy Reviewed

Terai Y., Hashimoto S., Noda K., Fujiwara Y.

Physica Status Solidi (C) Current Topics in Solid State Physics   6 ( 6 )   1488 - 1491   2009.09

Development of new-type 1.5 μm light-emitting devices based on Er,O-codoped GaAs Reviewed

Fujiwara Y., Terai Y., Nishikawa A.

Journal of Physics: Conference Series   165   2009.07

Photoreflectance study of β-FeSi2 epitaxial films grown by molecular beam epitaxy Reviewed

Terai Y., Noda K., Hashimoto S., Fujiwara Y.

Journal of Physics: Conference Series   165   2009.07

Metaloraganic chemical vapor deposition of Er-doped ZnO thin films with 1.54 μm photoluminescence Reviewed

Yamaoka K., Terai Y., Yamaguchi T., Ngo H., Gregorkiewicz T., Fujiwara Y.

Journal of Physics: Conference Series   165   2009.07

Luminescence properties of Eu-implanted GaN-based semiconductors Reviewed

Kasai H., Nishikawa A., Terai Y., Fujiwara Y.

Journal of Physics: Conference Series   165   2009.07

Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature Reviewed

31 ( 9 )   1323 - 1326   2009.07

Room-temperature red emission from a p-type/europium-doped/n-type gallium nitride light-emitting diode under current injection Reviewed

2 ( 7 )   2009.07

Modifications of direct transition energies in Β -FeSi2 epitaxial films grown by molecular beam epitaxy Reviewed

94 ( 24 )   2009.06

Ultrafast carrier capturing in GaInP/Er,O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy Reviewed

93 ( 23 )   2008.12

Epitaxial growth of spinel ferrite oxide (Al,Ru,Fe) 3O 4 on a GaAs(001) substrate using a MgO buffer layer Reviewed

Kanki T., Kawahara T., Asakawa N., Hotta Y., Terai Y., Fujiwara Y., Tabata H., Kawai T.

Materials Research Society Symposium Proceedings   1034   86 - 90   2008.12

Ultrafast photoexcited carrier dynamics in GaAs:Er,O by pump and probe transmission spectroscopy Reviewed

5 ( 9 )   2861 - 2863   2008.12

Site preference of atoms in heusler alloys Fe<inf>3</inf>Si and Fe <inf>2</inf>MnSi grown on ge(111) toward realization of Ge channel spin transistors Reviewed

1119   13 - 18   2008.12

Nonradiative processes at low temperature in Er,O-codoped GaAs grown by organometallic vapor phase epitaxy Reviewed

5 ( 9 )   2864 - 2866   2008.12

Improved initial epitaxial growth of β-FeSi2 on Si(111) substrate by Al-doping Reviewed

5 ( 9 )   3159 - 3161   2008.12

Growth of transition-metal-doped ZnO films by plasma-enhanced CVD combined with RF sputtering Reviewed

5 ( 9 )   3125 - 3127   2008.12

GaAs emission from GaInP/Er,O-Co doped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy Reviewed

5 ( 9 )   2716 - 2718   2008.12

Room-temperature deposition of highly-insulating SiOCH films by plasma-enhanced chemical vapor deposition using tetraethoxysilane Reviewed

517 ( 2 )   479 - 482   2008.11

Terahertz radiation from Er,O-codoped GaAs surface grown by organometallic vapor phase epitaxy Reviewed

92 ( 11 )   2008.03

Organometallic vapor phase epitaxy of Er, O-codoped GaAs using tris(dipivaloylmethanato)erbium Reviewed

106 ( 1 )   2008.03

Mechanism of excitation and relaxation in Er,O-codoped GaAs for 1.5 μm light-emitting devices with extremely stable wavelength Reviewed

205 ( 1 )   64 - 67   2008.01

Ultrafast carrier trapping in Er-doped and Er,O-codoped GaAs revealed by pump and probe technique Reviewed

401-402   234 - 237   2007.12

Simulation of light propagation on photonic crystals with conjugated inversion lattices Reviewed

KUNIMATSU Shunsuke, TERAI Yoshikazu, MAEDA Yoshihito

IEICE technical report   107 ( 388 )   39 - 42   2007.12

Carrier dynamics in Er,O-codoped GaAs revealed by time-resolved terahertz emission measurements Reviewed

Shimada K., Terai Y., Takemoto S., Suzuki M., Tonouchi M., Fujiwara Y.

IRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics   486 - 487   2007.12

Direct observation of picosecond-scale energy-transfer processes in Er,O-codoped GaAs by pump-probe reflection technique Reviewed

Fujiwara Y., Nakamura K., Takemoto S., Sugino J.I., Terai Y., Suzuki M., Tonouchi M.

AIP Conference Proceedings   893   245 - 246   2007.12

Low-temperature growth of GaAs by organometallic vapor phase epitaxy using TEGa and TBAs Reviewed

56 ( 9 )   880 - 885   2007.09

Editorial Reviewed

Maeda Y., Homewood K.P., Sadoh T., Terai Y., Yamaguchi K., Akiyama K.

Thin Solid Films   515 ( 22 )   2007.08

Submicron dry-etching behavior of β-FeSi2 thin films towards fabrication of photonic crystals Reviewed

Imai A., Kunimatsu S., Akiyama K., Terai Y., Maeda Y.

Thin Solid Films   515 ( 22 )   8162 - 8165   2007.08

Photoluminescence enhancement by isolating β-FeSi2 layers from defective layers Reviewed

Ando Y.i., Imai A., Akiyama K., Terai Y., Maeda Y.

Thin Solid Films   515 ( 22 )   8133 - 8135   2007.08

Nondestructive investigation of β-FeSi2/Si interface by photoluminescence measurements Reviewed

Terai Y., Maeda Y., Fujiwara Y.

Thin Solid Films   515 ( 22 )   8129 - 8132   2007.08

Effect of plasma gases on insulating properties of low-temperature- deposited SiOCH films prepared by remote plasma-enhanced chemical vapor deposition Reviewed

Yamaoka K., Okada N., Yoshizako Y., Terai Y., Fujiwara Y.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   46 ( 4 B )   1997 - 2000   2007.04

Photoluminescence study of defect-free epitaxial silicon films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition Reviewed

Yasutake K., Tawara N., Ohmi H., Terai Y., Kakiuchi H., Watanabe H., Fujiwara Y.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   46 ( 4 B )   2510 - 2515   2007.04

Low-temperature deposition of amorphous carbon films for surface passivation of carbon-doped silicon oxide Reviewed

Yamaoka K., Terai Y., Okada N., Yamaguchi T., Yoshizako Y., Fujiwara Y.

Advanced Materials Research   24-25   645 - 648   2007.01

Magnetic properties of Er,O-codoped GaAs at low temperature Reviewed

3 ( 12 )   4082 - 4085   2006.12

Thermally Stable Carbon-Doped Silicon Oxide Films Deposited at Room Temperature Reviewed

YAMAOKA Keisuke, KATO Hideaki, TSUKIYAMA Daisuke, YOSHIZAKO Yuji, TERAI Yoshikazu, FUJIWARA Yasufumi

Extended abstracts of the ... Conference on Solid State Devices and Materials   2006   466 - 467   2006.09

Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃) Reviewed

TAWARA Naotaka, OHMI Hiromasa, TERAI Yoshikazu, KAKIUCHI Hiroaki, WATANABE Heiji, FUJIWARA Yasufumi, YASUTAKE Kiyoshi

Extended abstracts of the ... Conference on Solid State Devices and Materials   2006   1094 - 1095   2006.09

Direct observation of trapping of photo-excited carriers in Er,O-codoped GaAs Reviewed

376-377 ( 1 )   556 - 559   2006.04

Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane Reviewed

376-377 ( 1 )   399 - 402   2006.04

Photoluminescence enhancement of β-FeSi2 by optimizing Al-doping concentration Reviewed

Terai Y., Maeda Y., Fujiwara Y.

Physica B: Condensed Matter   376-377 ( 1 )   799 - 802   2006.04

Growth of bulk β-FeSi2 crystals by annealing of well-aligned solidification structures Reviewed

Mishina A., Akahori T., Terai Y., Yamauchi I., Fujiwara Y.

Physica B: Condensed Matter   376-377 ( 1 )   795 - 798   2006.04

Enhancement of 1.55μm Light Emission from Ion Beam Synthesized β-FeSi_2 Reviewed

ANDO Yu-ichiro, IMAI Akifumi, MAEDA Yoshihito, TERAI Yoshikazu, AKIYAMA Kensuke

IEICE technical report   105 ( 492 )   113 - 117   2005.12

Nonequilibrium carrier dynamics studied in Er,O-codoped GaAs by pump-probe reflection technique Reviewed

Fujiwara Y., Nakamura K., Takemoto S., Terai Y., Suzuki M., Koizumi A., Takeda Y., Tonouchi M.

Materials Research Society Symposium Proceedings   866   79 - 83   2005.12

Investigation of β-FeSi_2/Si Heterostructures by Photoluminescence with Different Optical Configurations Reviewed

TERAI Yoshikazu, MAEDA Yoshihito, AKIYAMA Kensuke, FUJIWARA Yasufumi

Extended abstracts of the ... Conference on Solid State Devices and Materials   2005   330 - 331   2005.09

Spin relaxation in CdTe/ZnTe quantum dots Reviewed

Chen Y., Okuno T., Masumoto Y., Terai Y., Kuroda S., Takita K.

AIP Conference Proceedings   772   1351 - 1352   2005.06

Ecologically Friendly Optical Semiconductors : β-FeSi_2 Reviewed

MAEDA Yoshihito, TERAI Yoshikazu

Bulletin of the Japan Institute of Metals   44 ( 6 )   471 - 476   2005.06

Photoluminescence properties from β-FeSi<inf>2</inf> film epitaxially grown on Si, YSZ and Si//YSZ Reviewed

Akiyama K., Kaneko S., Terai Y., Maeda Y., Funakubo H.

Japanese Journal of Applied Physics, Part 2: Letters   44 ( 8-11 )   2005.06

Epitaxial Growth of Al-Doped β-FeSi_2 on Si by Ion Beam Synthesis Reviewed

Maeda Yoshihito, Terai Yoshikazu, Itakura Masaru

Japanese journal of applied physics. Pt. 1, Regular papers & short notes   44 ( 4 )   2502 - 2505   2005.04

Enhancement of 1.54μm Photoluminescence in β-FeSi_2 by Surface Oxidation Reviewed

Terai Yoshikazu, Maeda Yoshihito

Japanese journal of applied physics. Pt. 1, Regular papers & short notes   44 ( 4 )   2492 - 2495   2005.04

Enhancement of 1.54 μm photoluminescence in β-FeSi2 by surface oxidation Reviewed

Terai Y., Maeda Y.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 ( 4 B )   2492 - 2495   2005.04

Epitaxial growth of Al-doped β-FeSi2 on Si by ion beam synthesis Reviewed

Maeda Y., Terai Y., Itakura M.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 ( 4 B )   2502 - 2505   2005.04

Growth process and structure of Fe/Si(1 1 1) ultrathin film: Transition from single-domain Fe(1 1 1)/Si(1 1 1) to β-FeSi2 Reviewed

Tsushima R., Michishita Y., Fujii S., Okado H., Umezawa K., Maeda Y., Terai Y., Oura K., Katayama M.

Surface Science   579 ( 1 )   73 - 79   2005.03

Photoluminescence Properties from β-FeSi_2 Film Epitaxially Grown on Si, YSZ and Si//YSZ Reviewed

Akiyama Kensuke, Kaneko Satoru, Terai Yoshikazu, MAEDA Yoshihito, FUNAKUBO Hiroshi

Japanese journal of applied physics. Pt. 2, Letters   44 ( 8 )   L303 - L305   2005.03

Superconductivity and vortex phases in the two-dimensional organic conductor λ-(BETS) 2Fe xGa 1-xCl 4 (x=0.45) Reviewed

Uji S., Terashima T., Terai Y., Yasuzuka S., Tokumoto M., Tanaka H., Kobayashi A., Kobayashi H.

Physical Review B - Condensed Matter and Materials Physics   71 ( 10 )   2005.03

2005-02-15 Reviewed

Yasuzuka Syuma, Uji Shinya, M. Yamamoto Hiroshi, Yamaura Jun-Ichi, Terakura Chieko, Terashima Taichi, Yakabe Taro, Terai Yoshikazu, Maeda Ryoko, Kato Reizo

Journal of the Physical Society of Japan ( Physical Society of Japan )   74 ( 2 )   679 - 685   2005.02

Enhancement of photoresponse properties of β-FeSi<inf>2</inf>/Si heterojunctions by Al doping Reviewed

27 ( 5 )   920 - 924   2005.02

Shubnikov-de Haas effect and angular-dependent magnetoresistance in new layered organic conductors ET<inf>3</inf>Cl(DFBIB) and ET<inf>3</inf>Br( <inf>p</inf>BIB) Reviewed

Yasuzuka S., Uji S., Yamamoto H.M., Yamaura J.I., Terakura C., Terashima T., Yakabe T., Terai Y., Maeda R., Kato R.

Journal of the Physical Society of Japan   74 ( 2 )   679 - 685   2005.02

Photoluminescence enhancement in impurity doped β-FeSi2 Reviewed

Terai Y., Maeda Y.

Optical Materials   27 ( 5 )   925 - 928   2005.02

Spin relaxation in CdTe quantum dots Reviewed

71 ( 3 )   2005.01

Semiconducting β-FeSi2 and Its Growth, Electrical and Optical Properties (特集:シリコン関連材料の作製と評価) Reviewed

前田 佳均, 寺井 慶和

電子情報通信学会技術研究報告   104 ( 510 )   37 - 42   2004.12

鉄シリサイドの結晶成長と電気, 光学特性の改善 Reviewed

前田 佳均, 寺井 慶和

電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   104 ( 510 )   37 - 42   2004.12

Photoluminescence Enhancement in β-FeSi_2 by Annealing in Oxygen Reviewed

TERAI Yoshikazu, MAEDA Yoshihito

Extended abstracts of the ... Conference on Solid State Devices and Materials   2004   828 - 829   2004.09

Crystal Growth and Photoresponse of Al-doped β-FeSi_2/Si Heterojunctions Reviewed

MAEDA Yoshihito, TERAI Yoshikazu, ITAKURA Masaru

Extended abstracts of the ... Conference on Solid State Devices and Materials   2004   824 - 825   2004.09

Photoluminescence properties of ion beam synthesized β-FeSi <inf>2</inf> Reviewed

461 ( 1 )   160 - 164   2004.08

Thermal expansion of β-FeSi2 at low temperatures Reviewed

Terai Y., Ishibashi H., Maeda Y., Udono H.

Thin Solid Films   461 ( 1 )   106 - 109   2004.08

Raman spectra for β-FeSi2 bulk crystals Reviewed

Maeda Y., Udono H., Terai Y.

Thin Solid Films   461 ( 1 )   165 - 170   2004.08

MBE growth and optical properties of self-organized dots of CdTe and (Cd,Mn)Te Reviewed

Kuroda S., Itoh N., Terai Y., Takita K.O., Okuno T., Nomura M., Masumoto Y.

Journal of Alloys and Compounds   371 ( 1-2 )   31 - 36   2004.05

Enhancement of 1.54 μm photoluminescence observed in Al-doped β-FeSi2 Reviewed

Terai Y., Maeda Y.

Applied Physics Letters   84 ( 6 )   903 - 905   2004.02

Dynamics of localized Mn spins in diluted-magnetic-semiconductor nanostructures with quantum dots Reviewed

241 ( 2 )   361 - 369   2004.02

Photoluminescence and photoresponse properties of aluminum doped β-FeSi<inf>2</inf> Reviewed

Maeda Y., Terai Y.

IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai   67 - 68   2004.01

Spin-lattice relaxation of Mn ions in nanostructures with semiconductor quantum dots Reviewed

16 ( 2 )   391 - 394   2003.12

Electron-electron interaction effect on conductivities in cobalt thin films Reviewed

329-333 ( II )   1111 - 1112   2003.05

Size effect on vortex states in superconducting mesoscopic aluminum disks Reviewed

329-333 ( II )   1419 - 1420   2003.05

Large anisotropy in magnetic field induced superconductors λ-(BETS)2FexGa1-xCl4 Reviewed

Uji S., Terakura C., Terashima T., Yakabe T., Terai Y., Imanaka Y., Yasuzuka S., Tokumoto M., Sakai F., Kobayashi A., Tanaka H., Kobayashi H., Balicas L., Brooks J.S.

Physica C: Superconductivity and its Applications   388-389   611 - 612   2003.05

Highest-order optical phonon-mediated relaxation in CdTe/ZnTe quantum dots Reviewed

102-103 ( SPEC )   623 - 628   2003.05

Fermi surface and resistance anomalies in ET-TCNQ Reviewed

135-136   647 - 648   2003.04

Superconductivity in organic alloys λ-(BETS)2FexGa1-xCl4 Reviewed

Uji S., Terashima T., Terakura C., Yakabe T., Terai Y., Yasuzuka S., Imanaka Y., Takamasu T., Tokumoto M., Sakai F., Kobayashi A., Tanaka H., Kobayashi H., Balicas L., Brooks J.S.

Synthetic Metals   137 ( 1-3 )   1183 - 1185   2003.04

Fermi surface in new layered organic conductors (BEDT-TTF)<inf>3</inf>Br(pBIB) and (BEDT-TTF)<inf>3</inf>Cl(DFBIB) Reviewed

Yasuzuka S., Terakura C., Terashima T., Yakabe T., Terai Y., Yamamoto H.M., Yamaura J., Maeda R., Kato R., Uji S.

Synthetic Metals   133-134   169 - 171   2003.03

Novel electronic properties under magnetic fields in organic conductors λ-(BETS)2FexGa1-xCl4 Reviewed

Uji S., Terakura C., Terashima T., Yakabe T., Imanaka Y., Terai Y., Yasuzuka S., Tokumoto M., Sakai F., Kobayashi A., Tanaka H., Kobayashi H., Balicas L., Brooks J.S.

Synthetic Metals   133-134   481 - 483   2003.03

Global phase diagram of the magnetic field-induced organic superconductors λ-(BETS)2FexGa1-xCl4 Reviewed

Uji S., Terashima T., Terakura C., Yakabe T., Terai Y., Yasuzuka S., Imanaka Y., Tokumoto M., Kobayashi A., Sakai F., Tanaka H., Kobayashi H., Balicas L., Brooks J.S.

Journal of the Physical Society of Japan   72 ( 2 )   369 - 373   2003.02

Optical Study of Phonon-Mediated Carrier Relaxation in CdTe/ZnTe Self-Assembled Quantum Dots Reviewed

71 ( 12 )   3052 - 3058   2002.12

Magnetic phase diagram in field induced superconductors λ-(BETS)2FexGa1-xCl4 Reviewed

Uji S., Terakura C., Terashima T., Yakabe T., Imanaka Y., Terai Y., Yasuzuka S., Tokumoto M., Kobayashi A., Sakai F., Tanaka H., Kobayashi H., Balicas L., Brooks J.S.

International Journal of Modern Physics B   16 ( 20-22 )   3084 - 3088   2002.08

Electrical conductivity of Co thin films at low temperature Reviewed

Yakabe T., Terai Y., Yasuzuka S., Terakura C., Terashima T., Uji S., Fujita D., Kido G.

Shinku/Journal of the Vacuum Society of Japan   45 ( 3 )   235 - 238   2002.07

Re-entrant superconductivity in mesoscopic aluminum disks Reviewed

63 ( 6-8 )   1311 - 1313   2002.06

Fermi surface and internal magnetic field of the organic conductors λ-(BETS)2FexGa1-xCl4 Reviewed

Uji S., Terakura C., Terashima T., Yakabe T., Terai Y., Tokumoto M., Kobayashi A., Sakai F., Tanaka H., Kobayashi H.

Physical Review B - Condensed Matter and Materials Physics   65 ( 11 )   1131011 - 1131014   2002.03

24pYE-10 Optical study of phonon-mediated carrier relaxationin CdTe/ZnTe self-assembled quantum dots : Observation of the multiple LO-phonon structures up to the 19th order Reviewed

Okuno T., Nomura M., Masumoto Y., Terai Y., Kuroda S., Takita K.

Meeting abstracts of the Physical Society of Japan   57 ( 1 )   2002.03

Fermi surface and internal magnetic field of the organic conductors (formula presented) Reviewed

65 ( 11 )   1 - 4   2002.01

Fermi surface studies in the magnetic-field-induced superconductor λ-(BETS)2FeCl4 Reviewed

Uji S., Shinagawa H., Terakura C., Terashima T., Yakabe T., Terai Y., Tokumoto M., Kobayashi A., Tanaka H., Kobayashi H.

Physical Review B - Condensed Matter and Materials Physics   64 ( 2 )   245311 - 245315   2001.08

Self-organized quantum dots of Cd1-xMnxTe: MBE growth on Zn(Cd)Te surface and magneto-photoluminescence Reviewed

Kuroda S., Umakoshi N., Terai Y., Takita K.

Physica E: Low-Dimensional Systems and Nanostructures   10 ( 1-3 )   353 - 357   2001.05

Magnetic-field-induced superconductivity in a two-dimensional organic conductor Reviewed

410 ( 6831 )   908 - 910   2001.04

Progress of solid-state quantum computers at NRIM Reviewed

298 ( 1-4 )   567 - 572   2001.04

Two-dimensional Fermi surface for the organic conductor κ-(BETS)2FeBr4 Reviewed

Uji S., Shinagawa H., Terai Y., Yakabe T., Terakura C., Terashima T., Balicas L., Brooks J., Ojima E., Fujiwara H., Kobayashi H., Kobayashi A., Tokumoto M.

Physica B: Condensed Matter   298 ( 1-4 )   557 - 561   2001.04

Superconducting transition in nanoscale aluminum structures Reviewed

298 ( 1-4 )   536 - 540   2001.04

Fermi surface studies in the magnetic-field-induced superconductor (formula presented) Reviewed

64 ( 2 )   2001.01

Growth of self-organized dots of Cd1-xMnxTe on ZnTe by atomic layer epitaxy Reviewed

Terai Y., Kuroda S., Takita K.

Journal of Crystal Growth   214   178 - 182   2000.06

Self-organized quantum dots of diluted magnetic semiconductors Cd1-xMnxTe Reviewed

Kuroda S., Terai Y., Takita K., Takamasu T., Kido G., Hasegawa N., Kuroda T., Minami F.

Journal of Crystal Growth   214   140 - 149   2000.06

Magneto-photoluminescence from self-organized quantum dots of Cd1-xMnxTe grown by molecular beam epitaxy Reviewed

Terai Y., Kuroda S., Takita K., Takamasu T., Kido G.

Journal of Luminescence   87   396 - 398   2000.05

Self-organized formation and photoluminescence of Cd1-xMnxTe quantum dots grown on ZnTe by atomic layer epitaxy Reviewed

Terai Y., Kuroda S., Takita K.

Applied Physics Letters   76 ( 17 )   2400 - 2402   2000.04

Excitonic luminescence from self-organized quantum dots of CdTe grown by molecular beam epitaxy Reviewed

38 ( 4 B )   2524 - 2528   1999.12

Micro photoluminescence spectra of CdTe and CdMnTe self-organized quantum dots Reviewed

Kuroda T., Hasegawa N., Minami F., Terai Y., Kuroda S., Takita K.

Journal of Luminescence   83-84   321 - 324   1999.12

Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy Reviewed

Kuroda Shinji, Terai Yoshikazu, Takita Koji, OKUNO Tsuyoshi, MASUMOTO Yasuaki

Japanese journal of applied physics. Pt. 1, Regular papers & short notes   38 ( 4 )   2524 - 2528   1999.04

Self-organized quantum dots of zinc-blende MnTe grown by molecular beam epitaxy Reviewed

Kuroda S., Terai Y., Takita K., Okuno T., Masumoto Y.

Journal of Crystal Growth   184-185   274 - 278   1998.12

Zero-dimensional excitonic properties of self-organized quantum dots of CdTe grown by molecular beam epitaxy Reviewed

73 ( 25 )   3757 - 3759   1998.12

Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy Reviewed

KURODA Shinji, TERAI Yoshikazu, TAKITA Koki

Extended abstracts of the ... Conference on Solid State Devices and Materials   1998   236 - 237   1998.09

β-(Fe1-xRux)Si2多結晶薄膜における電気伝導特性のRu組成比依存性

櫻井優，髙橋匠，寺井慶和

第71回 応用物理学会春季学術講演会  2024.03 

鉄シリサイド半導体上へのひずみゲルマニウム成長

石飛新太郎，長友颯一朗，寺井慶和

第14回半導体材料・デバイスフォーラム  2023.12 

β-FeSi2 pnホモ接合における暗電流値と分光感度のSi/Fe供給比依存性

山形悠太，田中光太(有明高専卒)，寺井慶和

第14回半導体材料・デバイスフォーラム  2023.12 

トポロジカル絶縁体Bi2Se3上へのCdSe成長のSe/Cd蒸気圧比依存性

小田部龍哉，山形悠太，寺井慶和

第14回半導体材料・デバイスフォーラム  2023.12 

n-Ru2Si3/p-Si pnヘテロ接合素子における短波赤外線領域の分光感度評価

大石　結也，森本　耕平，寺井　慶和

第14回半導体材料・デバイスフォーラム  2023.12 

n-Ru2Si3/p-Si pn接合素子における短波赤外線領域の分光感度評価

大石　結也，森本　耕平，寺井　慶和

（令和5年度）応用物理学会九州支部学術講演会  2023.11 

MBE法によるβ-FeSi2上へのGe成長とひずみ評価

石飛新太郎，長友颯一朗，寺井慶和

第84回応用物理学会秋季学術講演会  2023.09 

MBE法によるトポロジカル絶縁体Bi2Se3上へのCdSe成長

小田部龍哉，近藤智裕，寺井慶和

第84回応用物理学会秋季学術講演会  2023.09 

β-FeSi2 pnホモ接合における分光感度のSi/Fe供給比依存性

田中光太，神田秀和，寺井慶和

第84回応用物理学会秋季学術講演会  2023.09 

トポロジカル絶縁体Bi2Se3エピタキシャル成長の基板種依存性

小田部龍哉，近藤智裕，寺井慶和

第20回シリサイド系半導体・夏の学校  2023.07 

MBE法 によるβ-FeSi2上へのひずみGe成長

石飛新太郎，長友颯一朗，寺井慶和

第20回シリサイド系半導体・夏の学校  2023.07 

n-Ru2Si3/p-Si ヘテロ接合の分光感度評価

大石 結也，寺井 慶和

第20回シリサイド系半導体・夏の学校  2023.07 

Si/β-(Fe1-xRux)Si2/Si積層構造における1.5µm発光強度の温度依存性

大石結也，吉原怜，寺井慶和

2022年　第83回応用物理学会秋季学術講演会  2022.09 

SiO2/β-FeSi2/SiO2積層構造における 1.5 μm発光の評価

吉原怜，大石結也，寺井慶和

2022年　第83回応用物理学会秋季学術講演会  2022.09 

Investigation of Raman depolarization ratio in topological insulator Bi2Se3 epitaxial films

Tomohiro Kondo, Takamu Nozaki, Ryuya Kotabe and Yoshikazu Terai

Asia-Pacific Conference on Green Technology with Silicides and Related Materials 

Growth of Ru-doped β-FeSi2 polycrystalline thin films by RF magnetron sputtering

Ren Yoshihara, Yuya Oishi and Yoshikazu Terai

Asia-Pacific Conference on Green Technology with Silicides and Related Materials 

Photoresponse properties of β-FeSi2 pn homojunction grown by molecular beam epitaxy

Hidekazu Kanda, Shintaro Ishitobi and Yoshikazu Terai

Asia-Pacific Conference on Green Technology with Silicides and Related Materials 

Growth and optical properties of ternary iron silicides Invited

Yoshikazu Terai

The Sixth Asian School-Conference on Physics and Technology of Nanostructured Materials 

Growth of AlN thin films by pressure gradient sputtering method

Y. Terai, K. Haraguchi, R. Ichinose, H. Ohta, K. Yonezawa

14th International symposium on advanced plasma science and its applications for nitride and nanomaterials 

低温1段階法によるトポロジカル絶縁体Bi2Se3膜のエピタキシャル成長

野崎孝武，近藤智裕，寺井慶和

第12回半導体材料・デバイスフォーラム 

Thickness dependence of polarized Raman spectra in topological insulator Bi2Se3 epitaxial films

Takamu Nozaki, Kondo Tomohiro and Yoshikazu Terai

9 th International Symposium on Applied Engineering and Sciences 

Growth of β-FeSi2/Si modulation-doped heterostructures

Kazuki Yamato, Hidekazu Kanda and Yoshikazu Terai

9 th International Symposium on Applied Engineering and Sciences 

Growth of β-FeSi2/Si modulation-doped heterostructures

Kazuki Yamato, Hidekazu Kanda and Yoshikazu Terai

9 th International Symposium on Applied Engineering and Sciences 

Thickness dependence of polarized Raman spectra in topological insulator Bi2Se3 epitaxial films

Takamu Nozaki, Kondo Tomohiro and Yoshikazu Terai

9 th International Symposium on Applied Engineering and Sciences  

トポロジカル絶縁体Bi2Se3 エピタキシャル膜における偏光ラマンスペクトルの膜厚依存性

野崎孝武，近藤智裕，寺井慶和

2021年　第82回応用物理学会秋季学術講演会 

β-FeSi2/Si変調ドーピング構造の作製と電気特性評価

山戸一輝，神田秀和，寺井慶和

2021年　第82回応用物理学会秋季学術講演会 

Si/β-(Fe1-xRux)Si2/Si 多結晶積層構造における1.5 μm発光の寿命評価

吉原怜，寺井慶和

2021年　第82回応用物理学会秋季学術講演会 

偏光ラマンスペクトルによるトポロジカル絶縁体Bi2Se3エピタキシャル膜の評価

近藤智裕，野崎孝武，寺井慶和

2021年　第82回応用物理学会秋季学術講演会 

β-FeSi2 pnホモ接合における分光感度の素子構造依存性

神田秀和，山戸一輝，寺井慶和

2021年度 応用物理学会九州支部学術講演会 

圧力勾配スパッタリング法によるAlN膜の作製と構造評価

原口謙吾，市瀬亮, 太田裕己，米澤 健，寺井慶和

2021年 第68回応用物理学会春季学術講演会 

トポロジカル絶縁体Bi2Se3の低温エピタキシャル成長と電気特性評価

野崎孝武，近藤智裕, 太田裕己，米澤 健，寺井慶和

2021年 第68回応用物理学会春季学術講演会 

β-(Fe1-xRux)Si2多結晶薄膜の作製と発光特性評価

吉原 怜，西 大樹，寺井慶和

2021年 第68回応用物理学会春季学術講演会 

β-FeSi2 pnホモ接合素子の作製と光応答特性

木下涼太，山戸一輝，寺井慶和

2021年 第68回応用物理学会春季学術講演会 

Growth of AlN thin films by pressure gradient sputtering method

Y. Terai, K. Haraguchi, R. Ichinose, H. Ohta, K. Yonezawa

14th International symposium on advanced plasma science and its applications for nitride and nanomaterials 

Photoresponse spectra of n-Ru2Si3/p-Si hetero-junction grown by solid phase epitaxy

Hiroki Nishi and Yoshikazu Terai

8th International Symposium on Applied Engineering and Sciences 

β-FeSi2 pnホモ型接合素子の作製と分光感度評価

木下涼太, 山戸一輝, 寺井慶和

2020年度 応用物理学会九州支部学術講演会 

n-Ru2Si3/p-Siヘテロ接合における光応答特性の評価（II）

西　大樹，寺井慶和

2020年 第81回応用物理学会秋季学術講演会 

スパッタリング法によるβ-Fe1-xRuxSi2多結晶薄膜の作製

篠村　太輔，西　大樹，寺井　慶和

2020年 第81回応用物理学会秋季学術講演会 

n-Ru2Si3/p-Si pn接合素子における光応答特性の評価

西　大樹，寺井慶和

2020年 第67回応用物理学会春季学術講演会 

固相成長法により作製したRu2Si3多結晶薄膜の光学特性評価

西　大樹，瀬戸島　健太，寺井　慶和

第11回半導体材料・デバイスフォーラム 

n-Ru2Si3/p-Si pn接合素子の作製と光応答特性

西　大樹，瀬戸島 健太，寺井慶和

2019年 第80回応用物理学会秋季学術講演会 

Sb添加β-FeSi2エピタキシャル膜におけるSi/Fe組成比の最適化

木下涼太，阿部光希，江口元，寺井慶和

2019年 第80回応用物理学会秋季学術講演会 

Dependence of electrical conduction properties on activation conditions in Sb-doped β-FeSi2 epitaxial films

Asia-Pacific Conference on Green Technology with Silicides and Related Materials 

Photoreflectance spectra of highly-oriented Mg2Si(111)//Si(111) films

Photoluminescence properties of polycrystalline β-FeSi2 grown by RF magnetron sputtering

Asia-Pacific Conference on Green Technology with Silicides and Related Materials 2019 

Si/B添加β-FeSi2/Si積層構造における1.5 μm発光の活性層厚依存性

岡　直大，佐藤隆治，寺井慶和

2019年 第66回応用物理学会春季学術講演会 

Mg2Si(111)//Si(111)高配向膜における光変調反射率スペクトルの評価

星田裕文, S. Alexander, I. Chernev, N.G. Galkin, 寺井慶和

2019年 第66回応用物理学会春季学術講演会 

Study of the origin of defect levels in undoped-BaSi2 epitaxial films by PL measurement

L. Benincasa, H. Hoshida, T. Deng, T. Sato, K. Toko, Y. Terai, and T. Suemasu

2019年 第66回応用物理学会春季学術講演会 

Sb添加β-FeSi2エピタキシャル膜におけるドナー活性化条件の最適化(II)

江口　元，阿部光希，木下涼太，村上智樹，寺井慶和

2019年 第66回応用物理学会春季学術講演会 

Si/B添加β-FeSi2/Si多重積層構造における発光スペクトル評価

岡　直大，瀬戸島　健太，寺井　慶和

平成30年度応用物理学会九州支部学術講演会 

Sb添加β-FeSi2エピタキシャル膜におけるSb置換サイトの検証

阿部光希，江口元，星田裕文，寺井慶和

平成30年度応用物理学会九州支部学術講演会 

偏光ラマン測定を用いたBaSi2エピタキシャル膜の分子振動評価

星田裕文，末益　崇，寺井慶和

第10回半導体材料・デバイスフォーラム 

Sb添加β-FeSi2エピタキシャル膜の作製とドナー活性化条件の最適化

江口 元，飯沼 元輝，星田 裕文，村社 尚紀，寺井 慶和

第10回半導体材料・デバイスフォーラム 

BaSi2エピタキシャル膜における光変調反射率スペクトルのBa/Siフラックス比依存性

星田裕文，末益　崇，寺井慶和

2018年 第79回応用物理学会秋季学術講演会 

Investigation of defect levels in undoped-BaSi2 epitaxial films by PL measurement

L. Benincasa, H. Hoshida, T. Deng, M. Sato, K. Toko, Y. Terai, and T. Suemasu

2018年 第79回応用物理学会秋季学術講演会 

Growth of Ru2Si3 polycrystalline thin films by solid phase epitaxy in Ru-Si amorphous layers

Fourth Asian School-Conference on Physics and Technology of Nanostructured Materials 

Growth of Sb-doped β-FeSi2 epitaxial films and optimization of donor activation conditions

Fourth Asian School-Conference on Physics and Technology of Nanostructured Materials 

Identification of Raman vibrational modes in BaSi2 epitaxial film by depolarization ratio

H. Hirofumi, N. Murakoso, T. Suemasu, Y. Terai

Fourth Asian School-Conference on Physics and Technology of Nanostructured Materials 

固相成長β-FeSi2ナノ結晶の発光寿命評価

阿部光希，N. G. Galkin，寺井慶和

第18回シリサイド系半導体・夏の学校 

B添加β-FeSi2/Si多結晶積層構造における1.5 μm発光の基板依存性

池田 修哉，岡 直大, 寺井 慶和

第18回シリサイド系半導体・夏の学校 

ラマン偏光解消度によるBaSi2 エピタキシャル膜の分子振動モード解析

星田裕文，村社尚紀，末益崇，寺井慶和

2018年 第65回応用物理学会春季学術講演会 

固相成長法によるRu2Si3薄膜の作製と電気特性評価

瀬戸島 健太，池田 修哉，扇 和也，岡 直大，寺井 慶和

2018年 第65回応用物理学会春季学術講演会 

Sb添加β-FeSi2エピタキシャル膜におけるドナー活性化条件の最適化

江口　元，飯沼元輝，星田裕文，村社尚紀，寺井慶和

2018年 第65回応用物理学会春季学術講演会 

Si/β-FeSi2/Si多結晶積層構造における1.5 μm発光のSi基板方位依存性

池田 修哉，岡　直大，扇　和也，瀬戸島 健太，寺井 慶和

2018年 第65回応用物理学会春季学術講演会 

アモルファス固相反応法によるシリサイド半導体Ru2Si3薄膜の作製

瀬戸島 健太，池田 修哉，扇 和也，岡 直大，寺井 慶和

2017年 応用物理学会九州支部学術講演会 

BaSi2エピタキシャル膜における光学フォノンモードの同定

星田裕文，村社尚紀，末益 崇，寺井慶和

2017年 応用物理学会九州支部学術講演会 

低電子密度n型β-FeSi2 / p型Siヘテロ構造における光伝導スペクトル

飯沼元輝，江口　元，村社尚紀，星田裕文，寺井慶和

2017年 第78回応用物理学会秋季学術講演会 

赤外吸収測定によるBaSi2エピタキシャル膜の分子振動評価

星田裕文，村社尚紀，飯沼元輝，江口 元，末益 崇，寺井慶和

2017年 第78回応用物理学会秋季学術講演会 

分光エリプソメトリーによるβ-FeSi2エピタキシャル膜の組成評価

村社尚紀，星田裕文, 飯沼元輝，江口元，寺井慶和

2017年 第78回応用物理学会秋季学術講演会 

表面損傷を与えたSi基板におけるSi欠陥発光の寿命評価(II)

扇　和也，岡　直大，池田修哉，瀬戸島健太，寺井慶和

2017年 第78回応用物理学会秋季学術講演会 

Si/B添加β-FeSi2/Si多結晶積層構造における1.5 μm発光の面内分布評価

池田 修哉，瀬戸島 健太，扇 和也，岡 直大，寺井 慶和

2017年 第78回応用物理学会秋季学術講演会 

PL lifetimes of dislocation-related PL in surface-damaged Si

29th International Conference on Defects in Semiconductors 

表面損傷を与えたSi基板におけるSi欠陥発光の寿命評価

扇　和也，岡　直大，池田修哉，瀬戸島健太，寺井慶和

第64回応用物理学会春季学術講演会 

Si/β-FeSi2/Si 多結晶積層構造における1.5 μm発光の寿命評価

池田 修哉，瀬戸島 健太，扇 和也，岡 直大，寺井 慶和

第64回応用物理学会春季学術講演会 

Sbドーピングによるβ-FeSi2エピタキシャル膜の電子密度制御

飯沼元輝，江口　元，村社尚紀，星田裕文，寺井慶和

第64回応用物理学会春季学術講演会 

Si/β-FeSi2/Si多結晶積層構造における発光スペクトル評価

池田 修哉，扇 和也，飯沼 元輝, 村社 尚紀，寺井 慶和

2016年応用物理学会九州支部学術講演会 

スパッタリング法により作製したβ-FeSi2多結晶薄膜のPLスペクトル

池田修哉，扇　和也，飯沼元輝, 村社尚紀，寺井慶和

第77回応用物理学会秋季学術講演会 

偏光ラマンスペクトル測定によるBaSi2の分子振動モード解析 (II)

村社尚紀，飯沼元輝，末益　崇，寺井慶和

第77回応用物理学会秋季学術講演会 

β-FeSi2エピタキシャル膜での直接遷移エネルギーと電気特性の相関

飯沼元輝，村社尚紀，池田修哉，扇　和也，寺井慶和

第77回応用物理学会秋季学術講演会 

低残留電子密度β-FeSi¬2/Si多結晶薄膜における光変調反射率スペクトル

扇 和也，池田修哉，飯沼元輝，村社尚紀，寺井慶和

第77回応用物理学会秋季学術講演会 

Structural and electrical properties of β-FeSi2 polycrystalline films with low electron density

Kazuya Ogi, Takahiko Higashi, Shuya Ikeda,Tetsu Hattori and Yoshikazu Terai

Asia-Pacific Conference on Green Technology with Silicides and Related Materials  

Lattice Vibrational Properties of BaSi2 Epitaxial Film in Polarized Raman Spectra

Naoki Murakoso, Haruki Yamaguchi, Motoki Iinuma, Takashi Suemasu, and Yoshikazu Terai

Asia-Pacific Conference on Green Technology with Silicides and Related Materials 

Growth of p-type β-FeSi2 Polycrystalline Films by RF Magnetron Sputtering

Shuya Ikeda, Kazuya Ogi, Tetsu Hattori, Takahiko Higashi and Yoshikazu Terai

Asia-Pacific Conference on Green Technology with Silicides and Related Materials 

Dependence of Direct Transition Energies on Growth Temperature in β-FeSi2 Epitaxial Films

Motoki Iinuma, Hiroaki Tsukamoto, Naoki Murakoso, Haruki Yamaguchi and Yoshikazu Terai

Asia-Pacific Conference on Green Technology with Silicides and Related Materials 

偏光ラマンスペクトル測定によるBaSi2の分子振動モード解析

山口陽己，村社尚紀，山﨑一輝，尾方済人，塚本裕明，末益　崇，寺井慶和

2016年 第63回応用物理学会春季学術講演会 

β-FeSi2エピタキシャル膜におけるラマンシフトの成長方位依存性

山﨑一輝，山口陽己，寺井慶和

2016年 第63回応用物理学会春季学術講演会 

β-FeSi2エピタキシャル膜における直接遷移エネルギーの成長温度依存性

塚本裕明，飯沼元輝，山口陽己，村社尚紀，山﨑一輝，寺井慶和

2016年 第63回応用物理学会春季学術講演会 

スパッタリング法で作製したβ-FeSi2多結晶薄膜内の不純物濃度分析

服部　哲，東　貴彦，池田修哉，扇　和也，寺井慶和

2016年 第63回応用物理学会春季学術講演会 

Time of Fright method for Work function measurement

Muto Masao, Tsuno Katsushige, Yonezawa Takeshi, Terai Yoshikazu, Nishiyama Hiroshi

Abstract of annual meeting of the Surface Science of Japan 

Analysis of multiple ion scattering in beta-FeSi2 films with equivalent domains epitaxially grown on Si(111)

Fuchi Masaya, Arima Mikihiro, Terai Yoshikazu, Narumi Kazumasa, Maeda Yoshihito

Abstract of annual meeting of the Surface Science of Japan 

β-FeSi2エピタキシャル膜におけるラマンスペクトルの熱処理温度依存性

山﨑一輝，山口陽己，寺井慶和

2015年 応用物理学会九州支部学術講演会 

スパッタリング法によるβ-FeSi2薄膜の作製と電気特性評価

東　貴彦，服部　哲，寺井慶和

第7回半導体材料・デバイスフォーラム 

β-FeSi2多結晶薄膜における電気伝導機構の検証(II)

東　貴彦，服部　哲，寺井慶和

2015年 第76回応用物理学会秋季学術講演会 

Bドープβ-FeSi2多結晶薄膜における不純物の活性化過程

服部　哲，三村祐介，東　貴彦，山口陽己，寺井慶和

2015年 第76回応用物理学会秋季学術講演会 

BaSi2エピタキシャル膜の光変調反射スペクトル

塚本裕明，山口陽己，山﨑一輝，末益　崇，寺井慶和

2015年 第76回応用物理学会秋季学術講演会 

BaSi2エピタキシャル膜における偏光ラマンスペクトル解析

山口陽己，尾方済人，塚本裕明，末益　崇，寺井慶和

2015年 第76回応用物理学会秋季学術講演会 

Photoreflectance study of surface Fermi level in β-FeSi2 epitaxial films

Third Asian School-Conference on Physics and Technology of Nanostructured Materials 

Effects of residual carrier density on I-V curves in β-FeSi2 polycrystalline/Si heterojunctions

Third Asian School-Conference on Physics and Technology of Nanostructured Materials 

Formation processes of β-FeSi2 polycrystalline films with low carrier density

Third Asian School-Conference on Physics and Technology of Nanostructured Materials 

Polarized Raman spectra of β-FeSi2(100)//Si(001) epitaxial film

Third Asian School-Conference on Physics and Technology of Nanostructured Materials 

学術雑誌 Japanese Journal of Applied Physics, Conference Proceeding vol.3の編集委員