Faculty Profiles - TERAI Yoshikazu

Papers - TERAI Yoshikazu

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Characterization of surface electric field in β-FeSi<inf>2</inf> by Franz-Keldysh oscillations Reviewed International journal

Terai Y., Tsukamoto H., Yamaguchi H.

Journal of Applied Physics 135 ( 20 ) 2024.05

Growth of Ru-doped β-FeSi<inf>2</inf> polycrystalline thin films by RF magnetron sputtering Reviewed International journal

Terai Y., Yoshihara R., Oishi Y.

Japanese Journal of Applied Physics 62 ( SD ) 2023.05

Semiconducting Silicide Green Technologies Reviewed International journal

Nakamura Y., Suemasu T., Ohmi S.I., Terai Y., Tatsuoka H., Kume T., Yamaguchi K.

Japanese Journal of Applied Physics 62 ( SD ) 2023.05

Investigation of Raman depolarization ratio in topological insulator Bi<inf>2</inf>Se<inf>3</inf> epitaxial films Reviewed International journal

Kondo T., Nozaki T., Kotabe R., Terai Y.

Japanese Journal of Applied Physics 62 2023.05

Structural and piezoelectric properties of AlN thin films grown by pressure gradient sputtering Reviewed International journal

Terai Y., Haraguchi K., Ichinose R., Oota H., Yonezawa K.

Japanese Journal of Applied Physics 62 ( SA ) 2023.01

Preface to Special Issues on Recent Progress on Optical Functional Semiconductors Based on Group 14 Elements Reviewed

TERAI Yoshikazu

The Review of Laser Engineering ( The Laser Society of Japan ) 50 ( 10 ) 558 2022.01

Authorship：Lead author Language：Japanese Publishing type：Research paper (scientific journal)

This paper describes the overview of special issues on recent progress on optical functional semiconductors
based on group 14 elements. Currently, silicon (Si) is mainly used in solar cells and optical sensors
that are indispensable in the IOT society. In order to advance the performance of these devices, it is essential
to improve the materials that compose the devices. New compounds of group 14 elements and
metals are attracting attention as new optical functional materials. The recent research on the compounds
was summarized.

DOI： 10.2184/lsj.50.10_558

CiNii Research

Enhanced Valley Splitting of Exciton Emission in Colloidal PbSe Quantum Dots When the Interdot Distance Coincides with Onset of Förster Resonance Energy Transfer Reviewed International journal

Takahisa Omata, Hiroshi Asano, Masahiro Sakai, Yoshikazu Terai, and Masao Kita

Journal of Physical Chemistry Letters 12 ( 12 ) 3120 - 3126 2021.03

Photoreflectance spectra of highly-oriented Mg2Si(111)//Si(111) films Reviewed International journal

Y. Terai, H. Hoshida, R. Kinoshita, A. Shevlyagin, I. Chernev and A. Gouralnik

Japanese Journal of Applied Physics : Conference Proceedings 8 011004/1 - 011004/4 2020.08

Significant enhancement of photoresponsivity in As-doped n-BaSi2 epitaxial films by atomic hydrogen passivation Reviewed International journal

Sho Aonuki, Yudai Yamashita, Takuma Sato, Zhihao Xu, Kazuhiro Gotoh , Kaoru Toko , Yoshikazu Terai, Noritaka Usami, and Takashi Suemasu

Applied Physics Express 13 ( 5 ) 051001/1 - 051001/4 2020.04

Probing the Mg2Si/Si(111) heterojunction for photovoltaic applications Reviewed International journal

Alexander Shevlyagin, Igor Chernev, Nikolay Galkin, Andrey Gerasimenko, Anton Gutakovskii, Hirofumi Hoshida, Yoshikazu Terai, Naofumi Nishikawa, Keisuke Ohdaira

Solar Energy 211 383 - 395 2020.04

Photoluminescence properties of polycrystalline β-FeSi2 grown by RF magnetron sputtering Reviewed International journal

Yoshikazu Terai, Hiroki Nishi and Naohiro Oka

Japanese Journal of Applied Physics 59 ( SF ) SFFC01 2020.01

Investigation of defect levels in BaSi2 epitaxial films by photoluminescence and the effect of atomic hydrogen passivation Reviewed

Louise Benincasa, Hirofumi Hoshida, Tianguo Deng, Takuma Sato, Zhihao Xu, Kaoru Toko, Yoshikazu Terai and Takashi Suemasu

Journal of Physics Communications 3 ( 7 ) 075005/1 - 075005/4 2019.07

Polarized Raman spectra of β -FeSi<inf>2</inf> epitaxial film grown by molecular beam epitaxy Reviewed

Terai Y., Yamaguchi H., Tsukamoto H., Murakoso N., Hoshida H.

AIP Advances 8 ( 10 ) 2018.10

Detection of local vibrational modes induced by intrinsic defects in undoped BaSi<inf>2</inf> light absorber layers using Raman spectroscopy Reviewed

Sato T., Hoshida H., Takabe R., Toko K., Terai Y., Suemasu T.

Journal of Applied Physics 124 ( 2 ) 2018.07

Growth of Ru<inf>2</inf>Si<inf>3</inf> polycrystalline thin films by solid phase epitaxy in Ru-Si amorphous layers Reviewed

Setojima K., Ikeda S., Ogi K., Terai Y.

Defect and Diffusion Forum 386 DDF 33 - 37 2018.01

Growth of Sb-doped β-FeSi<inf>2</inf> epitaxial films and optimization of donor activation conditions Reviewed

Eguchi H., Iinuma M., Hoshida H., Murakoso N., Terai Y.

Defect and Diffusion Forum 386 DDF 38 - 42 2018.01

Identification of vibrational modes in BASi<inf>2</inf> epitaxial films by infrared and Raman spectroscopy Reviewed

Hoshida H., Murakoso N., Suemasu T., Terai Y.

Defect and Diffusion Forum 386 DDF 43 - 47 2018.01

Photoluminescence spectroscopy investigation of epitaxial Si/GaSb nanocrystals/Si heterostructure Reviewed

Goroshko D., Shevlyagin A., Chusovitin E., Dotsenko S., Gutakovskii A., Iinuma M., Terai Y., Subbotin E., Galkin N.

AIP Conference Proceedings 1874 2017.09

Stress-induced indirect to direct band gap transition in β -FeSi<inf>2</inf>nanocrystals embedded in Si Reviewed

Shevlyagin A., Goroshko D., Chusovitin E., Balagan S., Dotsenko S., Galkin K., Galkin N., Shamirzaev T., Gutakovskii A., Iinuma M., Terai Y.

AIP Conference Proceedings 1874 2017.09

Dependence of direct transition energy on growth temperature in β-FeSi2 epitaxial films Reviewed

Motoki Iinuma, Hiroaki Tsukamoto, Naoki Murakoso, Haruki Yamaguchi and Yoshikazu Terai

Japanese Journal of Applied Physics : Conference Proceedings 5 011106/1 - 011106/5 2017.05

Growth of p-type β-FeSi2 polycrystalline films by RF magnetron sputtering Reviewed

Shuya Ikeda, Kazuya Ogi, Tetsu Hattori, Takahiko Higashi, and Yoshikazu Terai

Japanese Journal of Applied Physics : Conference Proceedings 5 011204/1 - 011204/4 2017.05

Polarized Raman spectra of BaSi2 epitaxial film grown by molecular beam epitaxy Reviewed

Yoshikazu Terai, Haruki Yamaguchi, Hiroaki Tsukamoto, Naoki Murakoso, Motoki Iinuma, and Takashi Suemasu

Japanese Journal of Applied Physics 56 05DD02/1 - 05DD02/4 2017.04

Structural and electrical properties of β-FeSi2 polycrystalline films with low electron density Invited Reviewed

Yoshikazu Terai, Takahiko Higashi, Tetsu Hattori, Kazuya Ogi, and Shuya Ikeda

Japanese Journal of Applied Physics 56 05DD03/1 - 05DD03/5 2017.04

A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm Reviewed

A. V. Shevlyagin, D. L. Goroshko, E. A. Chusovitin, S. A. Balagan, S. A. Dotcenko, K. N. Galkin, N. G. Galkin, T. S. Shamirzaev, A. K. Gutakovskii, A. V. Latyshev, M. Iinuma, and Y. Terai

Journal of Applied Physics 121 ( 11 ) 113101/1 - 113101/9 2017.03

Ion channeling measurements of β-FeSi2 films epitaxially grown on Si(111) and their analysis by multiple scattering theory Reviewed

Fuchi Masaya, Arima Mikihiro, Narumi Kazumasa, Terai Yoshikazu, Maeda Yoshihito

JJAP Conference Proceedings ( The Japan Society of Applied Physics ) 5 ( 0 ) 011104 - 011104 2017.01

Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal)

We have evaluated β-FeSi2 (110), (101) planes epitaxially grown on Si(111) by using ion beam analysis. Unexpected large displacements were deduced from analysis based on single ion scattering. We have discussed multiple ion scattering caused inside the film and obtained the comparatively reasonable atomic displacement of Δx = 0.04 nm that is close to one sixth of one step height of six domains stacking on the (111) planes. This result suggests that multiple scattering may be attributed to the atomic displacement due to the domain stacking faults.

DOI： 10.56646/jjapcp.5.0_011104

CiNii Research

Dependence of direct transition energy on growth temperature in β-FeSi2 epitaxial films Reviewed

Iinuma Motoki, Tsukamoto Hiroaki, Murakoso Naoki, Yamaguchi Haruki, Terai Yoshikazu

JJAP Conference Proceedings ( The Japan Society of Applied Physics ) 5 ( 0 ) 011106 - 011106 2017.01

Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal)

Direct transition energy (Eg) of β-FeSi2/Si(111) epitaxial films grown at different growth temperatures (Ts) was investigated by photoreflectance (PR) measurements. In Raman spectra, the wavenumber of Ag-mode in Fe–Fe and Si–Si vibrations shifted to higher wavenumber with decrease of Ts. The estimated Si/Fe composition ratio of the epitaxial layer became small (Si-poor) in the films grown at lower Ts. In PR spectra, Eg shifted to higher energy with decrease of Ts. These results show that the modification of electronic structure by a strain induced at β-FeSi2/Si hetero-interface is suppressed by an increase of Si vacancies in β-FeSi2.

DOI： 10.56646/jjapcp.5.0_011106

CiNii Research

Growth of p-type β-FeSi2 polycrystalline films by RF magnetron sputtering Reviewed

Ikeda Shuya, Ogi Kazuya, Hattori Tetsu, Higashi Takahiko, Terai Yoshikazu

JJAP Conference Proceedings ( The Japan Society of Applied Physics ) 5 ( 0 ) 011204 - 011204 2017.01

Authorship：Last author,　Corresponding author Language：English Publishing type：Research paper (scientific journal)

β-FeSi2 polycrystalline films with p-type conduction were grown by RF magnetron sputtering using a B-doped p+-Si target with Fe chips. The hole density and mobility were 2 × 1017 cm−3 and 71 cm2 V−1 s−1 at RT, respectively. The acceptor levels formed by the B-doping were obtained to be 10 and 245 meV. In the temperature dependence of electrical properties, the p-type β-FeSi2 film showed the impurity-band conduction at 77–350 K.

DOI： 10.56646/jjapcp.5.0_011204

CiNii Research

Time of Fright method for Work function measurement Reviewed

Muto Masao, Tsuno Katsushige, Yonezawa Takeshi, Terai Yoshikazu, Nishiyama Hiroshi

Abstract of annual meeting of the Surface Science of Japan ( The Japan Society of Vacuum and Surface Science ) 36 ( 0 ) 337 2016.01

Analysis of multiple ion scattering in beta-FeSi2 films with equivalent domains epitaxially grown on Si(111) Reviewed

Fuchi Masaya, Arima Mikihiro, Terai Yoshikazu, Narumi Kazumasa, Maeda Yoshihito

Abstract of annual meeting of the Surface Science of Japan ( The Japan Society of Vacuum and Surface Science ) 36 ( 0 ) 134 2016.01

Effects of lattice deformations on Raman spectra in β-FeSi2 epitaxial films Reviewed

Yoshikazu Terai, Haruki Yamaguchi, Hiroaki Tsukamoto, Tetsu Hattori, and Takahiko Higashi

Japanese Journal of Applied Physics : Conference Proceedings 3 011109-1 - 011109-5 2015.06

Time-resolved photoluminescence properties of ion-beam-synthesized β-FeSi2 and Si-implanted Si Invited Reviewed

Yoshikazu TERAI and Yoshihito MAEDA

Japanese Journal of Applied Physics 54 ( 7 ) 07JB05-1 - 07JB05-5 2015.05

In situ Eu doping into Al<inf>x</inf>Ga<inf>1-x</inf>N grown by organometallic vapor phase epitaxy to improve luminescence properties Reviewed

Koizumi A., Kawabata K., Lee D.G., Nishikawa A., Terai Y., Ofuchi H., Honma T., Fujiwara Y.

Optical Materials 41 75 - 79 2015.01

Foreword: Semiconducting silicides green technology Reviewed

Terai Y.

Japanese Journal of Applied Physics 54 ( 7 ) 2015.01

Sputtering-assisted metal-organic chemical vapor deposition of Yb-doped ZnO for photonic conversion in Si solar cells Reviewed

11 ( 7-8 ) 1292 - 1295 2014.01

Conduction properties of β-FeSi2 epitaxial films with low carrier density Reviewed

Terai Y., Suzuki N., Noda K., Fujiwara Y.

Physica Status Solidi (C) Current Topics in Solid State Physics 10 ( 12 ) 1696 - 1698 2013.12

Formation of Eu3+ luminescent centers in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition Reviewed

52 ( 11 PART 1 ) 2013.11

Luminescence properties of Eu-doped GaN grown on GaN substrate Reviewed

52 ( 8 PART 2 ) 2013.08

Control of Eu luminescence centers by codoping of Mg and Si into Eu-doped GaN Reviewed

52 ( 8 PART 2 ) 2013.08

Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy Reviewed

102 ( 14 ) 2013.04

Growth condition dependence of Ge-doped β-FeSi2 epitaxial film by molecular beam epitaxy Reviewed

Noda K., Terai Y., Fujiwara Y.

Journal of Crystal Growth 378 376 - 380 2013.01

Advanced materials design of rare-earth-doped semiconductors by organometallic vapor phase epitaxy Reviewed

261 - 272 2013.01

Concentration quenching in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition Reviewed

Tsuji T., Terai Y., Kamarudin M.H.B., Yoshida K., Fujiwara Y.

Journal of Luminescence 132 ( 12 ) 3125 - 3128 2012.12

Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy Reviewed

Sasaki H., Hisaka T., Kadoiwa K., Terai Y., Fujiwara Y.

IEICE Electronics Express 9 ( 20 ) 1592 - 1597 2012.11

Hybrid mesoporous-silica materials functionalized by PtII complexes: Correlation between the spatial distribution of the active center, photoluminescence emission, and photocatalytic activity Reviewed

18 ( 36 ) 11371 - 11378 2012.09

Photoluminescence properties of Sm-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition Reviewed

358 ( 17 ) 2443 - 2445 2012.09

Effect of residual impurities on transport properties of β-FeSi 2 epitaxial films grown by molecular beam epitaxy Reviewed

Terai Y., Yoneda K., Noda K., Miura N., Fujiwara Y.

Journal of Applied Physics 112 ( 1 ) 2012.07

Eu luminescence center created by Mg codoping in Eu-doped GaN Reviewed

Lee D.G., Nishikawa A., Terai Y., Fujiwara Y.

Applied Physics Letters 100 ( 17 ) 2012.04

Optical Properties in Eu-doped GaN by Organometallic Vapor Phase Epitaxy and its Application to GaN-based Red Light-emitting Diodes Reviewed

NISHIKAWA Atsushi, TERAI Yoshikazu, FUJIWARA Yasufumi

Journal of the Japanese Association of Crystal Growth 38 ( 4 ) 270 - 273 2012.01

Growth condition dependence of direct bandgap in β-FeSi2 epitaxial films grown by molecular beam epitaxy Reviewed

23 5 - 8 2012.01

Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy Invited Reviewed

Nishikawa A., Furukawa N., Lee D.G., Kawabata K., Matsuno T., Terai Y., Fujiwara Y.

Materials Research Society Symposium Proceedings 1342 9 - 14 2012.01

Recent progress in red light-emitting diodes with Eu-Doped GaN Reviewed

2 721 - 724 2011.12

Improvement of crystalline quality in GaAs layer grown on thermal cyclic annealed SOS Reviewed

60 ( 11 ) 998 - 1003 2011.11

Bandgap modifications by lattice deformations in β-FeSi2 epitaxial films Invited Reviewed

Terai Y., Noda K., Yoneda K., Udono H., Maeda Y., Fujiwara Y.

Thin Solid Films 519 ( 24 ) 8468 - 8472 2011.10

Preface Reviewed

Maeda Y., Terai Y., Homewood K.P., Takarabe K., Yamaguchi K., Suzuki M., Sadoh T., Nakamura Y.

Thin Solid Films 519 ( 24 ) 2011.10

Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111) Reviewed

519 ( 24 ) 8461 - 8467 2011.10

Photoluminescence and photoreflectance studies in Si/β-FeSi 2/Si(001) double heterostructure Reviewed

Yoneda K., Terai Y., Noda K., Miura N., Fujiwara Y.

Physics Procedia 11 185 - 188 2011.06

Temperature dependence of direct transition energies in β-FeSi 2 epitaxial films on Si(111) substrate Reviewed

Noda K., Terai Y., Yoneda K., Fujiwara Y.

Physics Procedia 11 181 - 184 2011.06

Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy Reviewed

33 ( 7 ) 1071 - 1074 2011.05

Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy Reviewed

208 ( 2 ) 445 - 448 2011.02

Photoluminescence properties of Eu3+ ions in Eu-doped ZnO grown by sput- tering-assisted metalorganic chemical vapor deposition Reviewed

Terai Y., Yoshida K., Kamarudin M.H., Fujiwara Y.

Physica Status Solidi (C) Current Topics in Solid State Physics 8 ( 2 ) 519 - 521 2011.02

Exciton spin dynamics in CdTe/ZnTe quantum structures Reviewed

248 ( 2 ) 389 - 392 2011.02

Recent progress in rare-earth-doped semiconductors Invited Reviewed

Fujiwara Y., Nishikawa A., Terai Y.

2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010 2010.12

Growth temperature dependence of EU-doped GaN grown by organometallic vapor phase epitaxy Reviewed

59 ( 9 ) 671 - 674 2010.09

Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition Reviewed

42 ( 10 ) 2834 - 2836 2010.09

Photoluminescence properties of Eu-Doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition Reviewed

59 ( 9 ) 690 - 693 2010.09

Photoluminescence properties of Er-doped β-FeSi2 grown by ion implantation Reviewed

Terai Y., Tsuji T., Noda K., Fujiwara Y.

Physica E: Low-Dimensional Systems and Nanostructures 42 ( 10 ) 2846 - 2848 2010.09

Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy Reviewed

7 ( 7-8 ) 2040 - 2042 2010.08

Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy Reviewed

97 ( 5 ) 2010.08

Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy Reviewed International journal

Konaka Y., Ono K.I., Terai Y., Fujiwara Y.

Journal of Crystal Growth 312 ( 14 ) 2056 - 2059 2010.07

Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE Reviewed

207 ( 6 ) 1397 - 1399 2010.06

Improved Eu luminescence properties in eu-doped gan grown on gan substrates by organometallic vapor phase epitaxy Reviewed

49 ( 4 PART 1 ) 0480011 - 0480012 2010.04

Anisotropic spin dynamics of confined electrons in CdTe/ZnTe quantum structures Reviewed

81 ( 12 ) 2010.03

Present status and prospects of rare-earth-doped semiconductors Reviewed

FUJIWARA Yasufumi, TERAI Yoshikazu, NISHIKAWA Atsushi

79 ( 1 ) 25 - 31 2010.01

Optical properties of Eu-implanted GaN and related-alloy semiconductors Reviewed

Nishikawa A., Kasai H., Kawasaki T., Terai Y., Fujiwara Y.

Journal of Physics: Conference Series 191 2009.12

Luminescence properties in Er, O-codoped GaAs light-emitting devices with double excitation mechanism Reviewed

1111 143 - 148 2009.11

Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor deposition Reviewed

27 ( 5 ) 2248 - 2251 2009.10

Epitaxial growth of Al-doped β-FeSi2on Si(111) substrate by reactive deposition epitaxy Reviewed

Terai Y., Hashimoto S., Noda K., Fujiwara Y.

Physica Status Solidi (C) Current Topics in Solid State Physics 6 ( 6 ) 1488 - 1491 2009.09

Development of new-type 1.5 μm light-emitting devices based on Er,O-codoped GaAs Reviewed

Fujiwara Y., Terai Y., Nishikawa A.

Journal of Physics: Conference Series 165 2009.07

Metaloraganic chemical vapor deposition of Er-doped ZnO thin films with 1.54 μm photoluminescence Reviewed

Yamaoka K., Terai Y., Yamaguchi T., Ngo H., Gregorkiewicz T., Fujiwara Y.

Journal of Physics: Conference Series 165 2009.07

Luminescence properties of Eu-implanted GaN-based semiconductors Reviewed

Kasai H., Nishikawa A., Terai Y., Fujiwara Y.

Journal of Physics: Conference Series 165 2009.07

Photoreflectance study of β-FeSi2 epitaxial films grown by molecular beam epitaxy Reviewed

Terai Y., Noda K., Hashimoto S., Fujiwara Y.

Journal of Physics: Conference Series 165 2009.07

Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature Reviewed

31 ( 9 ) 1323 - 1326 2009.07

Room-temperature red emission from a p-type/europium-doped/n-type gallium nitride light-emitting diode under current injection Reviewed

2 ( 7 ) 2009.07

Modifications of direct transition energies in Β -FeSi2 epitaxial films grown by molecular beam epitaxy Reviewed

94 ( 24 ) 2009.06

Ultrafast carrier capturing in GaInP/Er,O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy Reviewed

93 ( 23 ) 2008.12

Epitaxial growth of spinel ferrite oxide (Al,Ru,Fe) 3O 4 on a GaAs(001) substrate using a MgO buffer layer Reviewed

Kanki T., Kawahara T., Asakawa N., Hotta Y., Terai Y., Fujiwara Y., Tabata H., Kawai T.

Materials Research Society Symposium Proceedings 1034 86 - 90 2008.12

Nonradiative processes at low temperature in Er,O-codoped GaAs grown by organometallic vapor phase epitaxy Reviewed

5 ( 9 ) 2864 - 2866 2008.12

Improved initial epitaxial growth of β-FeSi2 on Si(111) substrate by Al-doping Reviewed

5 ( 9 ) 3159 - 3161 2008.12

Growth of transition-metal-doped ZnO films by plasma-enhanced CVD combined with RF sputtering Reviewed

5 ( 9 ) 3125 - 3127 2008.12

GaAs emission from GaInP/Er,O-Co doped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy Reviewed

5 ( 9 ) 2716 - 2718 2008.12

Site preference of atoms in heusler alloys Fe<inf>3</inf>Si and Fe <inf>2</inf>MnSi grown on ge(111) toward realization of Ge channel spin transistors Reviewed

1119 13 - 18 2008.12

Ultrafast photoexcited carrier dynamics in GaAs:Er,O by pump and probe transmission spectroscopy Reviewed

5 ( 9 ) 2861 - 2863 2008.12

Room-temperature deposition of highly-insulating SiOCH films by plasma-enhanced chemical vapor deposition using tetraethoxysilane Reviewed

517 ( 2 ) 479 - 482 2008.11

Terahertz radiation from Er,O-codoped GaAs surface grown by organometallic vapor phase epitaxy Reviewed

92 ( 11 ) 2008.03

Organometallic vapor phase epitaxy of Er, O-codoped GaAs using tris(dipivaloylmethanato)erbium Reviewed

106 ( 1 ) 2008.03

Mechanism of excitation and relaxation in Er,O-codoped GaAs for 1.5 μm light-emitting devices with extremely stable wavelength Reviewed

205 ( 1 ) 64 - 67 2008.01

Ultrafast carrier trapping in Er-doped and Er,O-codoped GaAs revealed by pump and probe technique Reviewed

401-402 234 - 237 2007.12

Simulation of light propagation on photonic crystals with conjugated inversion lattices Reviewed

KUNIMATSU Shunsuke, TERAI Yoshikazu, MAEDA Yoshihito

IEICE technical report 107 ( 388 ) 39 - 42 2007.12

Carrier dynamics in Er,O-codoped GaAs revealed by time-resolved terahertz emission measurements Reviewed

Shimada K., Terai Y., Takemoto S., Suzuki M., Tonouchi M., Fujiwara Y.

IRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics 486 - 487 2007.12

Direct observation of picosecond-scale energy-transfer processes in Er,O-codoped GaAs by pump-probe reflection technique Reviewed

Fujiwara Y., Nakamura K., Takemoto S., Sugino J.I., Terai Y., Suzuki M., Tonouchi M.

AIP Conference Proceedings 893 245 - 246 2007.12

Low-temperature growth of GaAs by organometallic vapor phase epitaxy using TEGa and TBAs Reviewed

56 ( 9 ) 880 - 885 2007.09

Editorial Reviewed

Maeda Y., Homewood K.P., Sadoh T., Terai Y., Yamaguchi K., Akiyama K.

Thin Solid Films 515 ( 22 ) 2007.08

Photoluminescence enhancement by isolating β-FeSi2 layers from defective layers Reviewed

Ando Y.i., Imai A., Akiyama K., Terai Y., Maeda Y.

Thin Solid Films 515 ( 22 ) 8133 - 8135 2007.08

Nondestructive investigation of β-FeSi2/Si interface by photoluminescence measurements Reviewed

Terai Y., Maeda Y., Fujiwara Y.

Thin Solid Films 515 ( 22 ) 8129 - 8132 2007.08

Submicron dry-etching behavior of β-FeSi2 thin films towards fabrication of photonic crystals Reviewed

Imai A., Kunimatsu S., Akiyama K., Terai Y., Maeda Y.

Thin Solid Films 515 ( 22 ) 8162 - 8165 2007.08

Effect of plasma gases on insulating properties of low-temperature- deposited SiOCH films prepared by remote plasma-enhanced chemical vapor deposition Reviewed

Yamaoka K., Okada N., Yoshizako Y., Terai Y., Fujiwara Y.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 ( 4 B ) 1997 - 2000 2007.04

Photoluminescence study of defect-free epitaxial silicon films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition Reviewed

Yasutake K., Tawara N., Ohmi H., Terai Y., Kakiuchi H., Watanabe H., Fujiwara Y.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 ( 4 B ) 2510 - 2515 2007.04

Low-temperature deposition of amorphous carbon films for surface passivation of carbon-doped silicon oxide Reviewed

Yamaoka K., Terai Y., Okada N., Yamaguchi T., Yoshizako Y., Fujiwara Y.

Advanced Materials Research 24-25 645 - 648 2007.01

Magnetic properties of Er,O-codoped GaAs at low temperature Reviewed

3 ( 12 ) 4082 - 4085 2006.12

Thermally Stable Carbon-Doped Silicon Oxide Films Deposited at Room Temperature Reviewed

YAMAOKA Keisuke, KATO Hideaki, TSUKIYAMA Daisuke, YOSHIZAKO Yuji, TERAI Yoshikazu, FUJIWARA Yasufumi

Extended abstracts of the ... Conference on Solid State Devices and Materials 2006 466 - 467 2006.09

Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃) Reviewed

TAWARA Naotaka, OHMI Hiromasa, TERAI Yoshikazu, KAKIUCHI Hiroaki, WATANABE Heiji, FUJIWARA Yasufumi, YASUTAKE Kiyoshi

Extended abstracts of the ... Conference on Solid State Devices and Materials 2006 1094 - 1095 2006.09

Direct observation of trapping of photo-excited carriers in Er,O-codoped GaAs Reviewed

376-377 ( 1 ) 556 - 559 2006.04

Photoluminescence enhancement of β-FeSi2 by optimizing Al-doping concentration Reviewed

Terai Y., Maeda Y., Fujiwara Y.

Physica B: Condensed Matter 376-377 ( 1 ) 799 - 802 2006.04

Growth of bulk β-FeSi2 crystals by annealing of well-aligned solidification structures Reviewed

Mishina A., Akahori T., Terai Y., Yamauchi I., Fujiwara Y.

Physica B: Condensed Matter 376-377 ( 1 ) 795 - 798 2006.04

Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane Reviewed

376-377 ( 1 ) 399 - 402 2006.04

Enhancement of 1.55μm Light Emission from Ion Beam Synthesized β-FeSi_2 Reviewed

ANDO Yu-ichiro, IMAI Akifumi, MAEDA Yoshihito, TERAI Yoshikazu, AKIYAMA Kensuke

IEICE technical report 105 ( 492 ) 113 - 117 2005.12

Nonequilibrium carrier dynamics studied in Er,O-codoped GaAs by pump-probe reflection technique Reviewed

Fujiwara Y., Nakamura K., Takemoto S., Terai Y., Suzuki M., Koizumi A., Takeda Y., Tonouchi M.

Materials Research Society Symposium Proceedings 866 79 - 83 2005.12

Investigation of β-FeSi_2/Si Heterostructures by Photoluminescence with Different Optical Configurations Reviewed

TERAI Yoshikazu, MAEDA Yoshihito, AKIYAMA Kensuke, FUJIWARA Yasufumi

Extended abstracts of the ... Conference on Solid State Devices and Materials 2005 330 - 331 2005.09

Spin relaxation in CdTe/ZnTe quantum dots Reviewed

Chen Y., Okuno T., Masumoto Y., Terai Y., Kuroda S., Takita K.

AIP Conference Proceedings 772 1351 - 1352 2005.06

Ecologically Friendly Optical Semiconductors : β-FeSi_2 Reviewed

MAEDA Yoshihito, TERAI Yoshikazu

Bulletin of the Japan Institute of Metals 44 ( 6 ) 471 - 476 2005.06

Photoluminescence properties from β-FeSi<inf>2</inf> film epitaxially grown on Si, YSZ and Si//YSZ Reviewed

Akiyama K., Kaneko S., Terai Y., Maeda Y., Funakubo H.

Japanese Journal of Applied Physics, Part 2: Letters 44 ( 8-11 ) 2005.06

Epitaxial Growth of Al-Doped β-FeSi_2 on Si by Ion Beam Synthesis Reviewed

Maeda Yoshihito, Terai Yoshikazu, Itakura Masaru

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 44 ( 4 ) 2502 - 2505 2005.04

Enhancement of 1.54μm Photoluminescence in β-FeSi_2 by Surface Oxidation Reviewed

Terai Yoshikazu, Maeda Yoshihito

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 44 ( 4 ) 2492 - 2495 2005.04

Enhancement of 1.54 μm photoluminescence in β-FeSi2 by surface oxidation Reviewed

Terai Y., Maeda Y.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 ( 4 B ) 2492 - 2495 2005.04

Epitaxial growth of Al-doped β-FeSi2 on Si by ion beam synthesis Reviewed

Maeda Y., Terai Y., Itakura M.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 ( 4 B ) 2502 - 2505 2005.04

Growth process and structure of Fe/Si(1 1 1) ultrathin film: Transition from single-domain Fe(1 1 1)/Si(1 1 1) to β-FeSi2 Reviewed

Tsushima R., Michishita Y., Fujii S., Okado H., Umezawa K., Maeda Y., Terai Y., Oura K., Katayama M.

Surface Science 579 ( 1 ) 73 - 79 2005.03

Photoluminescence Properties from β-FeSi_2 Film Epitaxially Grown on Si, YSZ and Si//YSZ Reviewed

Akiyama Kensuke, Kaneko Satoru, Terai Yoshikazu, MAEDA Yoshihito, FUNAKUBO Hiroshi

Japanese journal of applied physics. Pt. 2, Letters 44 ( 8 ) L303 - L305 2005.03

Superconductivity and vortex phases in the two-dimensional organic conductor λ-(BETS) 2Fe xGa 1-xCl 4 (x=0.45) Reviewed

Uji S., Terashima T., Terai Y., Yasuzuka S., Tokumoto M., Tanaka H., Kobayashi A., Kobayashi H.

Physical Review B - Condensed Matter and Materials Physics 71 ( 10 ) 2005.03

2005-02-15 Reviewed

Yasuzuka Syuma, Uji Shinya, M. Yamamoto Hiroshi, Yamaura Jun-Ichi, Terakura Chieko, Terashima Taichi, Yakabe Taro, Terai Yoshikazu, Maeda Ryoko, Kato Reizo

Journal of the Physical Society of Japan ( Physical Society of Japan ) 74 ( 2 ) 679 - 685 2005.02

Enhancement of photoresponse properties of β-FeSi<inf>2</inf>/Si heterojunctions by Al doping Reviewed

27 ( 5 ) 920 - 924 2005.02

Photoluminescence enhancement in impurity doped β-FeSi2 Reviewed

Terai Y., Maeda Y.

Optical Materials 27 ( 5 ) 925 - 928 2005.02

Shubnikov-de Haas effect and angular-dependent magnetoresistance in new layered organic conductors ET<inf>3</inf>Cl(DFBIB) and ET<inf>3</inf>Br( <inf>p</inf>BIB) Reviewed

Yasuzuka S., Uji S., Yamamoto H.M., Yamaura J.I., Terakura C., Terashima T., Yakabe T., Terai Y., Maeda R., Kato R.

Journal of the Physical Society of Japan 74 ( 2 ) 679 - 685 2005.02

Spin relaxation in CdTe quantum dots Reviewed

71 ( 3 ) 2005.01

Semiconducting β-FeSi2 and Its Growth, Electrical and Optical Properties (特集:シリコン関連材料の作製と評価) Reviewed

前田佳均, 寺井慶和

電子情報通信学会技術研究報告 104 ( 510 ) 37 - 42 2004.12

Language：Japanese Publishing type：Research paper (scientific journal)

β-FeSi_2は1.55μm帯域の光エレクトロニクスヘの応用を目指した基礎研究が進んでいる.β-FeSi2のシリコン上での結晶成長(エピタキシャル成長,多結晶成長),格子ひずみを利用したバンドエンジニアリングの可能性,赤外発光・光電特性などの現状を紹介する.

CiNii Article

Other Link： http://ci.nii.ac.jp/naid/110003311194

鉄シリサイドの結晶成長と電気, 光学特性の改善 Reviewed

前田佳均, 寺井慶和

電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 104 ( 510 ) 37 - 42 2004.12

Photoluminescence Enhancement in β-FeSi_2 by Annealing in Oxygen Reviewed

TERAI Yoshikazu, MAEDA Yoshihito

Extended abstracts of the ... Conference on Solid State Devices and Materials 2004 828 - 829 2004.09

Crystal Growth and Photoresponse of Al-doped β-FeSi_2/Si Heterojunctions Reviewed

MAEDA Yoshihito, TERAI Yoshikazu, ITAKURA Masaru

Extended abstracts of the ... Conference on Solid State Devices and Materials 2004 824 - 825 2004.09

Photoluminescence properties of ion beam synthesized β-FeSi <inf>2</inf> Reviewed

461 ( 1 ) 160 - 164 2004.08

Thermal expansion of β-FeSi2 at low temperatures Reviewed

Terai Y., Ishibashi H., Maeda Y., Udono H.

Thin Solid Films 461 ( 1 ) 106 - 109 2004.08

Raman spectra for β-FeSi2 bulk crystals Reviewed

Maeda Y., Udono H., Terai Y.

Thin Solid Films 461 ( 1 ) 165 - 170 2004.08

MBE growth and optical properties of self-organized dots of CdTe and (Cd,Mn)Te Reviewed

Kuroda S., Itoh N., Terai Y., Takita K.O., Okuno T., Nomura M., Masumoto Y.

Journal of Alloys and Compounds 371 ( 1-2 ) 31 - 36 2004.05

Enhancement of 1.54 μm photoluminescence observed in Al-doped β-FeSi2 Reviewed

Terai Y., Maeda Y.

Applied Physics Letters 84 ( 6 ) 903 - 905 2004.02

Dynamics of localized Mn spins in diluted-magnetic-semiconductor nanostructures with quantum dots Reviewed

241 ( 2 ) 361 - 369 2004.02

Photoluminescence and photoresponse properties of aluminum doped β-FeSi<inf>2</inf> Reviewed

Maeda Y., Terai Y.

IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai 67 - 68 2004.01

Spin-lattice relaxation of Mn ions in nanostructures with semiconductor quantum dots Reviewed

16 ( 2 ) 391 - 394 2003.12

Electron-electron interaction effect on conductivities in cobalt thin films Reviewed

329-333 ( II ) 1111 - 1112 2003.05

Large anisotropy in magnetic field induced superconductors λ-(BETS)2FexGa1-xCl4 Reviewed

Uji S., Terakura C., Terashima T., Yakabe T., Terai Y., Imanaka Y., Yasuzuka S., Tokumoto M., Sakai F., Kobayashi A., Tanaka H., Kobayashi H., Balicas L., Brooks J.S.

Physica C: Superconductivity and its Applications 388-389 611 - 612 2003.05

Highest-order optical phonon-mediated relaxation in CdTe/ZnTe quantum dots Reviewed

102-103 ( SPEC ) 623 - 628 2003.05

Size effect on vortex states in superconducting mesoscopic aluminum disks Reviewed

329-333 ( II ) 1419 - 1420 2003.05

Fermi surface and resistance anomalies in ET-TCNQ Reviewed

135-136 647 - 648 2003.04

Superconductivity in organic alloys λ-(BETS)2FexGa1-xCl4 Reviewed

Uji S., Terashima T., Terakura C., Yakabe T., Terai Y., Yasuzuka S., Imanaka Y., Takamasu T., Tokumoto M., Sakai F., Kobayashi A., Tanaka H., Kobayashi H., Balicas L., Brooks J.S.

Synthetic Metals 137 ( 1-3 ) 1183 - 1185 2003.04

Fermi surface in new layered organic conductors (BEDT-TTF)<inf>3</inf>Br(pBIB) and (BEDT-TTF)<inf>3</inf>Cl(DFBIB) Reviewed

Yasuzuka S., Terakura C., Terashima T., Yakabe T., Terai Y., Yamamoto H.M., Yamaura J., Maeda R., Kato R., Uji S.

Synthetic Metals 133-134 169 - 171 2003.03

Novel electronic properties under magnetic fields in organic conductors λ-(BETS)2FexGa1-xCl4 Reviewed

Uji S., Terakura C., Terashima T., Yakabe T., Imanaka Y., Terai Y., Yasuzuka S., Tokumoto M., Sakai F., Kobayashi A., Tanaka H., Kobayashi H., Balicas L., Brooks J.S.

Synthetic Metals 133-134 481 - 483 2003.03

Global phase diagram of the magnetic field-induced organic superconductors λ-(BETS)2FexGa1-xCl4 Reviewed

Uji S., Terashima T., Terakura C., Yakabe T., Terai Y., Yasuzuka S., Imanaka Y., Tokumoto M., Kobayashi A., Sakai F., Tanaka H., Kobayashi H., Balicas L., Brooks J.S.

Journal of the Physical Society of Japan 72 ( 2 ) 369 - 373 2003.02

Optical Study of Phonon-Mediated Carrier Relaxation in CdTe/ZnTe Self-Assembled Quantum Dots Reviewed

71 ( 12 ) 3052 - 3058 2002.12

Magnetic phase diagram in field induced superconductors λ-(BETS)2FexGa1-xCl4 Reviewed

Uji S., Terakura C., Terashima T., Yakabe T., Imanaka Y., Terai Y., Yasuzuka S., Tokumoto M., Kobayashi A., Sakai F., Tanaka H., Kobayashi H., Balicas L., Brooks J.S.

International Journal of Modern Physics B 16 ( 20-22 ) 3084 - 3088 2002.08

Electrical conductivity of Co thin films at low temperature Reviewed

Yakabe T., Terai Y., Yasuzuka S., Terakura C., Terashima T., Uji S., Fujita D., Kido G.

Shinku/Journal of the Vacuum Society of Japan 45 ( 3 ) 235 - 238 2002.07

Re-entrant superconductivity in mesoscopic aluminum disks Reviewed

63 ( 6-8 ) 1311 - 1313 2002.06

Fermi surface and internal magnetic field of the organic conductors λ-(BETS)2FexGa1-xCl4 Reviewed

Uji S., Terakura C., Terashima T., Yakabe T., Terai Y., Tokumoto M., Kobayashi A., Sakai F., Tanaka H., Kobayashi H.

Physical Review B - Condensed Matter and Materials Physics 65 ( 11 ) 1131011 - 1131014 2002.03

24pYE-10 Optical study of phonon-mediated carrier relaxationin CdTe/ZnTe self-assembled quantum dots : Observation of the multiple LO-phonon structures up to the 19th order Reviewed

Okuno T., Nomura M., Masumoto Y., Terai Y., Kuroda S., Takita K.

Meeting abstracts of the Physical Society of Japan 57 ( 1 ) 2002.03

Fermi surface and internal magnetic field of the organic conductors (formula presented) Reviewed

65 ( 11 ) 1 - 4 2002.01

Fermi surface studies in the magnetic-field-induced superconductor λ-(BETS)2FeCl4 Reviewed

Uji S., Shinagawa H., Terakura C., Terashima T., Yakabe T., Terai Y., Tokumoto M., Kobayashi A., Tanaka H., Kobayashi H.

Physical Review B - Condensed Matter and Materials Physics 64 ( 2 ) 245311 - 245315 2001.08

Self-organized quantum dots of Cd1-xMnxTe: MBE growth on Zn(Cd)Te surface and magneto-photoluminescence Reviewed

Kuroda S., Umakoshi N., Terai Y., Takita K.

Physica E: Low-Dimensional Systems and Nanostructures 10 ( 1-3 ) 353 - 357 2001.05

Magnetic-field-induced superconductivity in a two-dimensional organic conductor Reviewed

410 ( 6831 ) 908 - 910 2001.04

Progress of solid-state quantum computers at NRIM Reviewed

298 ( 1-4 ) 567 - 572 2001.04

Two-dimensional Fermi surface for the organic conductor κ-(BETS)2FeBr4 Reviewed

Uji S., Shinagawa H., Terai Y., Yakabe T., Terakura C., Terashima T., Balicas L., Brooks J., Ojima E., Fujiwara H., Kobayashi H., Kobayashi A., Tokumoto M.

Physica B: Condensed Matter 298 ( 1-4 ) 557 - 561 2001.04

Superconducting transition in nanoscale aluminum structures Reviewed

298 ( 1-4 ) 536 - 540 2001.04

Fermi surface studies in the magnetic-field-induced superconductor (formula presented) Reviewed

64 ( 2 ) 2001.01

Growth of self-organized dots of Cd1-xMnxTe on ZnTe by atomic layer epitaxy Reviewed

Terai Y., Kuroda S., Takita K.

Journal of Crystal Growth 214 178 - 182 2000.06

Self-organized quantum dots of diluted magnetic semiconductors Cd1-xMnxTe Reviewed

Kuroda S., Terai Y., Takita K., Takamasu T., Kido G., Hasegawa N., Kuroda T., Minami F.

Journal of Crystal Growth 214 140 - 149 2000.06

Magneto-photoluminescence from self-organized quantum dots of Cd1-xMnxTe grown by molecular beam epitaxy Reviewed

Terai Y., Kuroda S., Takita K., Takamasu T., Kido G.

Journal of Luminescence 87 396 - 398 2000.05

Self-organized formation and photoluminescence of Cd1-xMnxTe quantum dots grown on ZnTe by atomic layer epitaxy Reviewed

Terai Y., Kuroda S., Takita K.

Applied Physics Letters 76 ( 17 ) 2400 - 2402 2000.04

Excitonic luminescence from self-organized quantum dots of CdTe grown by molecular beam epitaxy Reviewed

38 ( 4 B ) 2524 - 2528 1999.12

Micro photoluminescence spectra of CdTe and CdMnTe self-organized quantum dots Reviewed

Kuroda T., Hasegawa N., Minami F., Terai Y., Kuroda S., Takita K.

Journal of Luminescence 83-84 321 - 324 1999.12

Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy Reviewed

Kuroda Shinji, Terai Yoshikazu, Takita Koji, OKUNO Tsuyoshi, MASUMOTO Yasuaki

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 38 ( 4 ) 2524 - 2528 1999.04

Self-organized quantum dots of zinc-blende MnTe grown by molecular beam epitaxy Reviewed

Kuroda S., Terai Y., Takita K., Okuno T., Masumoto Y.

Journal of Crystal Growth 184-185 274 - 278 1998.12

Zero-dimensional excitonic properties of self-organized quantum dots of CdTe grown by molecular beam epitaxy Reviewed

73 ( 25 ) 3757 - 3759 1998.12

Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy Reviewed

KURODA Shinji, TERAI Yoshikazu, TAKITA Koki

Extended abstracts of the ... Conference on Solid State Devices and Materials 1998 236 - 237 1998.09

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