TSUKUDA Masanori

写真a

Title

Specially Appointed Associate Professor

Laboratory

2-4 Hibikino, Wakamatsu-ku, Kitakyushu-shi, Fukuoka

Degree 【 display / non-display

  • Kyushu Institute of Technology -  Doctor of Engineering  2013.06

Biography in Kyutech 【 display / non-display

  • 2019.01
    -
    Now

    Kyushu Institute of TechnologyGraduate School of Life Science and Systems Engineering   Department of Biological Functions Engineering   Specially Appointed Associate Professor  

Biography before Kyutech 【 display / non-display

  • 2015.04
    -
    Now

      Technical Support Staff   JAPAN

  • 2010.03
    -
    2015.03

      Researcher   JAPAN

  • 1991.04
    -
    2010.02

    TOSHIBA   Technical Support Staff   JAPAN

Academic Society Memberships 【 display / non-display

  • 2018.09
    -
    Now
     

    IEEE  UNITED STATES

Specialized Field (scientific research fund) 【 display / non-display

  • Power engineering/Power conversion/Electric machinery

 

Publications (Article) 【 display / non-display

  • Peak minimisation based gate delay compensation for active current balancing of parallel IGBT system

    Tripathi R., Tsukuda M., Omura I.

    Microelectronics Reliability    100-101   2019.09  [Refereed]

     View Summary

    © 2019 Elsevier Ltd The non-uniform current sharing among the paralleled devices is consequential due to non-identical layout and alteration in parameters of the system consists of power semiconductor devices and gate drivers. The persistent non-uniform current among the paralleled devices arise the various concerns such as de-rating, uneven losses, and heat consequently can lead to reliability and failure issues of the system. This paper presents a simple yet intelligent and effective automatic control for gate delay compensation to achieve active current balancing through current peak minimisation. The current peak minimisation control approach can serve the purpose of minimising system de-rating as well as obtaining nearly uniform dynamic current sharing. The four parallel connected discrete IGBT system is used for experimental validation under unbalanced operating condition. Moreover, the current peak minimization trend evaluation is introduced for gate delay compensation.

    DOI Scopus

  • Output-Current Measurement of a PWM Inverter with a Tiny PCB Rogowski Sensor Integrated into an IGBT Module

    Hasegawa K., Sho S., Tsukuda M., Omura I., Ichiki M., Kato T.

    2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019      5707 - 5711   2019.09  [Refereed]

     View Summary

    © 2019 IEEE. Inverters used in motor-drive and grid-connected applications usually employ current sensors at the output terminal because they have to control the output current. Existing current sensors like the Hall sensor and the current transformer are a constraint to reduce the volume and cost of the inverter. This paper proposes an output-current measurement method of a PWM inverter using a tiny PCB sensor that is based on the so-called Rogowski coil and can be integrated into an IGBT module. The method utilizes the switching current of the low-side switch for reproducing the output current, which allows using the PCB sensor because the switching current consists of high-frequency components. The method uses a single PCB sensor per leg and takes the polarity of the output current into account. Experimental results using a half-bridge sinusoidal PWM inverter verify that the proposed method measures the output current including its fundamental frequency component, switching ripple one, and polarity.

    DOI Scopus

  • Development of fast short-circuit protection system for advanced IGBT

    Ichiki M., Arimoto T., Abe S., Tsukuda M., Omura I.

    Microelectronics Reliability    100-101   2019.09  [Refereed]

     View Summary

    © 2019 Elsevier Ltd The higher current density of IGBTs has made it difficult to achieve high short-circuit withstand capability as well as good conduction characteristics. Therefore, a fast and reliable protection system is required for the safe operation of IGBT. This paper determines the short-circuit safe protection area (SCSPA) for advanced IGBT that has no short-circuit withstand capability and proposes the protection system satisfied this SCSPA. The fast protection is brought by PCB Rogowski coil and digital gate driver using digital circuit (FPGA). Experimental results verify that short-circuit detection time is 70 ns, shut-down time is reduced by controlling the gate resistance at turn-off.

    DOI Scopus

  • Calculation of single event burnout failure rate for high voltage devices under satellite orbit without fitting parameters

    Sudo M., Nagamatsu T., Tsukuda M., Omura I.

    Microelectronics Reliability    100-101   2019.09  [Refereed]

     View Summary

    © 2019 Elsevier Ltd Increase of power bus voltages in spacecraft are expected with the power demand growth. Accordingly, high voltage semiconductor devices in the power supply system will be required to withstand high energy and high flux cosmic ray environment. In this paper, we propose a new formula to calculate failure rate for power semiconductor devices in space application.

    DOI Scopus

  • 3300V Scaled IGBTs Driven by 5V Gate Voltage

    Saraya T., Itou K., Takakura T., Fukui M., Suzuki S., Takeuchi K., Tsukuda M., Numasawa Y., Satoh K., Matsudai T., Saito W., Kakushima K., Hoshii T., Furukawa K., Watanabe M., Shigyo N., Wakabayashi H., Tsutsui K., Iwai H., Ogura A., Nishizawa S., Omura I., Ohashi H., Hiramoto T.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs    2019-May   43 - 46   2019.05  [Refereed]

     View Summary

    © 2019 IEEE. In this work, 5V gate drive 3300V IGBTs, designed based on a scaling principle, have been demonstrated. Turn-off characteristics without noticeable degradation in the gate voltage waveforms were confirmed. Turn-off tail current of the scaled devices significantly decreased than conventional 15V-driven devices. As a result of both Vce and turn-off loss reduction, 35% improvement in Eoff vs Vcesat relationship was achieved.

    DOI Scopus

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Publications (Books) 【 display / non-display

  • 再生可能エネルギーにおけるコンバータ原理と設計法 (設計技術シリーズ)

    合田忠弘,庄山正仁,安芸裕久,伊瀬敏史,市川紀充,江口政樹,大村一郎,門勇一,栗原郁夫,河野良之,小西博雄,佐藤之彦,新保哲彦,高崎昌洋,附田正則,天満耕司,西方正司,廣瀬圭一,藤田敬喜,舟木剛,松田秀雄,水垣桂子,諸住哲 ( Joint Work )

    科学情報出版株式会社  2016.05

Conference Prsentations (Oral, Poster) 【 display / non-display

  • Development of scale down testbed for high voltage power device

    MATSUYOSHI Takashi, TSUKUDA Msanori, HIRAI Hidetoshi, OMURA Ichiro

    Technical report of IEICE. Energy engineering in electronics and communications  2013.01  -  2013.01 

    CiNii

  • Development of scale down testbed for high voltage power device

    MATSUYOSHI Takashi, TSUKUDA Msanori, HIRAI Hidetoshi, OMURA Ichiro

    IEICE technical report. Component parts and materials  2013.01  -  2013.01 

    CiNii

  • Discussion of High Frequency Oscillation on Power PiN Diode

    KAWAKAMI Keiichiro, TSUKUDA Masanori, TAKAHAMA Kenichi, OMURA Ichiro

    2011.10  -  2011.10 

    CiNii

  • Discussion of High Frequency Oscillation on Power PiN Diode

    KAWAKAMI Keiichiro, TSUKUDA Masanori, TAKAHAMA Kenichi, OMURA Ichiro

    2011.10  -  2011.10 

    CiNii

Honors and Awards 【 display / non-display

  • 2018 IEEE Transactions on Power Electronics Prize Letter Award

    2018.09.26     JAPAN