Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)

The parallelling of power semiconductor devices is essential for desired current ratings and the system is prone to the current unbalancing due to parameter variations. SiC devices with significant variable threshold voltage due to manufacturing yield and temperature distribution have a consequential possibility of dynamic current unbalancing. This paper presents the peak detection-based current balancing of parallel-connected SiC devices to minimize the turn-on and turn-off current unbalancing. PCB current sensors are used for the measurement and feedback of the signal for this peak detection-based current balancing mechanism.

DOI： 10.1016/j.microrel.2025.115688

DOI： 10.1016/j.microrel.2025.115688

Other Link： https://www.sciencedirect.com/science/article/pii/S0026271425001015

Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.1049/pel2.12823

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85209773720&origin=inward

Authorship：Last author   Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.1016/j.ijhydene.2024.09.389

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85205934236&origin=inward

Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.1049/rpg2.13124

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85206947373&origin=inward

Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

Italy   2023.05.22  -  2023.05.25

The parallelling of power semiconductor devices is essential for desired current ratings and the system is prone to the current unbalancing due to parameter variations. SiC devices with significant variable threshold voltage due to manufacturing yield and temperature distribution have a consequential possibility of dynamic current unbalancing. This paper presents the peak detection-based current balancing of parallel-connected SiC devices to minimize the turn-on and turn-off current unbalancing. PCB current sensors are used for the measurement and feedback of the signal for this peak detection-based current balancing mechanism.

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85170650070&origin=inward

Event date： 2025.05.11 - 2025.05.14   Language：English   Country：India  

This paper proposes a fully Soft-switched AC/DC Converter (FSADC) for 800V onboard charger applications. A Zero Voltage Transient (ZVT) cell is integrated into a Bridgeless Boost (BB) PFC to provide soft switching for all the semiconductor devices in the circuit. The main switch turns ON and OFF with Zero Voltage (ZVS), and the main diode turns OFF with Zero Current (ZCS). Since switching loss is eliminated, the proposed converter can operate at high frequencies such as 500kHz. The high-frequency operation enables the use of a PCB winding planar inductor that significantly reduces the volume and cost of the OBC and contributes to efficiency improvements. A snubber inductor is integrated into the main inductor, sharing a portion of the magnetic components that further reduce the volume and cost of the circuit. A 6.6kW prototype with PCB winding integrated planar magnetic is built and tested to prove the superiority of the proposed converter.

Event date： 2024.11.26 - 2024.11.29   Language：English   Country：Japan  

Other Link： https://ieeexplore.ieee.org/document/10921119

Event date： 2024.11.26 - 2024.11.29   Language：English   Country：Japan  

Other Link： https://ieeexplore.ieee.org/document/10920907

Event date： 2024.09.12 - 2024.09.26   Language：English   Country：Italy  

The parallelling of power semiconductor devices is essential for desired current ratings and the system is prone to the current unbalancing due to parameter variations. SiC devices with significant variable threshold voltage due to manufacturing yield and temperature distribution have a consequential possibility of dynamic current unbalancing. This paper presents the peak detection-based current balancing of parallel-connected SiC devices to minimize the turn-on and turn-off current unbalancing. PCB current sensors are used for the measurement and feedback of the signal for this peak detection-based current balancing mechanism.

Event date： 2023.05.22 - 2023.05.25   Language：English   Country：Korea, Republic of  

This paper proposed an Electrolytic Capacitor-less (Ecap-less) 800V onboard charger (OBC) based on a Half-bridge Split Capacitors Power Decoupling (HSC-PD) circuit. A new design and control method proposed for HSC-PD to minimize the capacitance needed for the dc-link of the OBC enables the deployment of Film capacitors (Fcap) only.

Other Link： https://ieeexplore.ieee.org/document/10213494

Event date： 2024.11.22 - 2024.11.23   Language：English   Presentation type：Keynote lecture   Venue：Tula's Institute  

Country：Japan

The Japan Medal was established in 2020 and is presented by each Section as a commemorative gift
to IEEE Domestic Members when they are elevated to Senior Members. It features a Japanese historic
icon and state-of-the-art technology in electrical engineering. The design is based on a portrait of
Hiraga Gennai (licensed from the Central Library of Waseda University), pioneer of electrical
engineering in Japan, and his invention, Elekiter. The Medal is manufactured by the Japan Mint,
renowned for producing Japanese coins. The Medal utilizes "latent image" technology (where different
characters are displayed from different angles), a feature originally developed for anti-counterfeiting
of coins.

The scientific and technological evolution of state-of- the-art devices since its inception has made a leap in power rating. This ultimately leads to extend the horizon for operating range of a single device considering blocking voltage and current capability. However, higher current/voltage ratings of power devices are required for high power conversion and control Enhancement and optimization of the performance of power semiconductor devices are of fundamental concern, especially for the system consisting of parallel/series connected devices

Grant type：Joint research

Level：undergraduate_special_subjects  Country：India

Level：undergraduate_special_subjects  Country：India

Audience： Teachers,　Researchesrs

Type：Lecture

Delivered the lecture on 11th January 2025 for the Malaviya Mission Teacher Training Center (MMTTC) at IIITDM Kancheepuram is funded by the Ministry of Education (MoE) under the Malaviya Mission Teacher Training Programme scheduled from January 6–11, 2025.

Audience： College students,　Graduate students,　Teachers,　Researchesrs

Type：Lecture

Delivered a technical talk on "Gate Driving and Control for Power Electronics Systems" under the aegis of IEEE PELS and IAS-PES SB Chapters Thapar Institute of Engineering and Technology (Deemed to be University), Patiala, Punjab, India, and IEEE PELS-IES, PES-IAS Delhi Chapters, and IEEE Education Society Delhi Chapter.