植田 和茂 (ウエダ カズシゲ)

UEDA Kazushige

写真a

職名

准教授

研究室住所

福岡県北九州市戸畑区仙水町1-1

研究分野・キーワード

酸化物, セラミックス, 蛍光体, 透明導電体, 酸化物半導体

メールアドレス

メールアドレス

研究室電話

093-884-3339

研究室FAX

093-884-3300

ホームページ

http://www.che.kyutech.ac.jp/chem24/

Scopus 論文情報  
総論文数: 0  総Citation: 0  h-index: 10

Citation Countは当該年に発表した論文の被引用数

出身大学 【 表示 / 非表示

  • 1991年03月   東京工業大学   工学部   無機材料工学科   卒業   日本国

出身大学院 【 表示 / 非表示

  • 1998年03月  東京工業大学  総合理工学研究科  材料科学専攻  博士課程・博士後期課程  修了  日本国

取得学位 【 表示 / 非表示

  • 東京工業大学 -  博士(工学)  1998年03月

学内職務経歴 【 表示 / 非表示

  • 2008年04月
    -
    継続中

    九州工業大学   大学院工学研究院   物質工学研究系   准教授  

学外略歴 【 表示 / 非表示

  • 1998年04月
    -
    2003年03月

    東京工業大学 応用セラミックス研究所   助手   日本国

 

論文 【 表示 / 非表示

  • Site Dependence of Tb<sup>3+</sup> Luminescence in Double Perovskite-Type Alkaline Earth Lanthanum Tantalates

    K. Ueda,*, S. Tanaka, R. Yamamoto, Y. Shimizu, T. Honma, F. Massuyeau, S. Jobic

    The Journal of Physical Chemistry C    124   854 - 860   2020年01月  [査読有り]

     概要を見る

    Tb3+ doped alkaline earth lanthanum tantalates with the B-site-ordered double perovskite-type structure(AA′)[BB′]O6 (namely, (CaLa1−xTbx)[CaTa]O6(CLTO:Tb3+) and Ba2[La1−xTbxTa]O6 (BLTO:Tb3+) with x= 0.01, 0.10) were prepared, and their Tb3+ photoluminescence(PL) properties were examined and explained based on the occupied crystal sites (A or B sites). The locations of the Tb3+ activators were elucidated by analyzing powder X-ray diffraction patterns and X-ray absorption near edge structure at the Tb LIII edge. Tb3+ ions are located at A sites in CLTO:Tb3+ and at B sites in BLTO:Tb3+ as indicated in the nominal compositions. Both CLTO:Tb3+ and
    BLTO:Tb3+ exhibited intense PL excitation (PLE) peaks in the UV region due to the 4f−5d excitation for Tb3+. The PLE peak of Tb3+ in BLTO:Tb3+ showed a marked red-shift compared to that in CLTO:Tb3+ primarily because of the larger crystal fields at the B sites than at the A sites. The main PL peaks associated with the 4f−4f transitions from 5D4 to 7F5 states are also influenced by the crystal field, and the splitting of the PL peaks for Tb3+ at the B sites in BLTO:Tb3+ is more pronounced than that at the A sites in CLTO:Tb3+. In addition, owing to a downshift of the Tb 5d orbitals, the PL in the blue region derived from 5D3−7FJ transitions is quenched for Tb3+ in BLTO:Tb3+.

    DOI

  • Site-Selective Doping and Site-Sensitive Photoluminescence of Eu<sup>3+</sup> and Tb<sup>3+</sup> in Perovskite-Type LaLuO<inf>3</inf>

    Ueda K., Tanaka S., Yoshino T., Shimizu Y., Honma T.

    Inorganic Chemistry    58   10890 - 10897   2019年08月  [査読有り]

     概要を見る

    © 2019 American Chemical Society. Eu3+ and Tb3+ ions were site-selectively doped into LaLuO3 with the orthorhombic perovskite-type structure (ABO3), and their luminescence properties were examined considering the doping sites (A or B sites). The X-ray diffraction analysis revealed the expansion or contraction of the unit cell volumes of the materials depending on the doping sites. The spectra of X-ray absorption near edge structure for the Eu and Tb LIII edge exhibited different shapes for the ions at A and B sites, confirming the site-selective doping of Eu3+ and Tb3+ in LaLuO3. The photoluminescence (PL) and PL excitation (PLE) spectra of the materials also showed some differences caused by the doping sites. The intensities of the Eu3+ PL peaks derived from the 5D0-7F1 transitions and those from the 5D0-7F2 transitions were markedly different between Eu3+ at A sites and those at B sites because of the different site symmetries. The splitting of the intense Tb3+ PL peaks originating from the 5D4-7F5 transitions and the absence of PL peaks from 5D3-7FJ transitions were found only for Tb3+ at B sites because of the strong crystal field at B sites. In addition to the PL spectra, the positions of PLE peaks originating from charge transfer transitions in Eu3+ and the 4f-5d transitions in Tb3+ depended on the doping sites. The successful site-selective doping enabled us to clarify the site-sensitive luminescence properties of Eu3+ and Tb3+ doped in the perovskite-type LaLuO3.

    DOI Scopus

  • Ultraviolet emission from YAlO<inf>3</inf>:Gd<sup>3+</sup> thin film electroluminescent devices fabricated on perovskite-type oxide substrates

    Shimizu Y., Ueda K.

    Optical Materials    91   371 - 375   2019年05月  [査読有り]

     概要を見る

    © 2019 Elsevier B.V. Inorganic ultraviolet-electroluminescent (UV-EL) devices with a Gd3+-doped YAlO3 thin film emitting layer were fabricated by radio frequency sputtering. Three kinds of perovskite-type oxide substrates, namely a SrTiO3 single crystal (STO-SC), BaTiO3 single crystal (BTO-SC), and BaTiO3 polycrystalline disk (BTO-PC), were used for the devices. The influence of the substrates on the UV-EL properties of YAlO3:Gd3+ was investigated. It was found that EL threshold voltage, emitting locations, and EL intensity have changed depending on the substrates. The UV-EL attributed to the 6PJ-8S7/2 transitions in Gd3+ was observed in the BTO-PC substrate device with applied voltage of approximately over 200 V and in the STO-SC and BTO-SC substrate devices with that of approximately over 500 V. The STO-SC and BTO-SC devices showed EL only near the edges of a back electrode, whereas the BTO-PC device showed surface EL over the whole electrode. It was considered the local EL at the electrode edges in the SC substrate devices was caused by a concentrated electric field in the vicinity of the electrodes. The BTO-PC device showed not only the lowest EL threshold voltage but also the most intense EL in the three devices. Because the BTO-PC substrate has a high dielectric constant and appropriate surface roughness, which results in a high and uniform electric field over the back electrode, the YAlO3:Gd3+ emitting layer showed intense surface UV-EL with lower applied voltage.

    DOI Scopus

  • Ln <sup>3+</sup> 4f Energy Levels in CaTiO <inf>3</inf> Analyzed by XPS Measurements

    Yamamoto R., Ueda K.

    Physica Status Solidi (A) Applications and Materials Science    216 ( 5 ) 1700776(1) - 1700776(5)   2019年03月  [査読有り]

     概要を見る

    © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim The energy levels of Ln 3+ 4f ground states in CaTiO 3 are analyzed using X-ray photoelectron spectroscopy (XPS). The Ln 4f states in the XPS spectra are extracted utilizing large photoionization cross section differences between Ln 4f and O 2p states. The Ln 3+ 4f energy levels referred to the valence band maximum are evaluated to be 0.8 eV for Pr 3+ , −5.0 eV for Gd 3+ , 0.9 eV for Tb 3+ , and −4.6 eV for Lu 3+ from the extracted XPS spectra. Although the obtained values of Gd 3+ and Lu 3+ 4f levels are deeper in the valence band, the values of Pr 3+ and Tb 3+ 4f levels are in good agreement with those reported previously. The difference in the photoluminescence colors between Pr 3+ -doped CaTiO 3 and CaZrO 3 is simply explained from the Pr 3+ 4f energy levels located in the bandgaps.

    DOI Scopus

  • Luminescence and Location of Gd<sup>3+</sup>or Tb<sup>3+</sup>Ions in Perovskite-Type LaScO<inf>3</inf>

    Ueda K., Aoki T., Shimizu Y., Massuyeau F., Jobic S.

    Inorganic Chemistry    57 ( 15 ) 8718 - 8721   2018年08月  [査読有り]

     概要を見る

    © 2018 American Chemical Society. The luminescence properties of Gd3+or Tb3+ions at La and Sc sites were investigated in LaScO3with a distorted perovskite-type structure (ABO3). Although the luminescence of lanthanide ions located at B sites is not common and has not been examined in detail, Gd3+or Tb3+luminescence from B sites and A sites is clearly observed in Gd3+- or Tb3+-doped LaScO3. The differences in the luminescence characteristics concern peak positions, peak shapes, and decay time, which are all influenced by the crystal field and the site symmetry. The UV luminescence of Gd3+at B sites shows a red shift compared to Gd3+at A sites, and the green luminescence of Tb3+at B sites contrasts with the blue-violet and green luminescence of Tb3+at A sites. The decay time of the luminescence from B sites is systematically longer than that from A sites in both the Gd3+and Tb3+cases.

    DOI Scopus

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著書 【 表示 / 非表示

  • Handbook of Electronic and Photonic Materials (Springer Handbooks) 2nd ed. 2017 Edition

    Safa Kasap (Editor), Peter Capper (Editor), Hosono Hideo, Kazushige Ueda ( 分担執筆 , 担当範囲: Chapter 58 )

    Springer   2017年08月 ISBN: 978-3-319-48931-5

     概要を見る

    Transparent conducting oxides (TCOtransparentconducting oxide (TCO)s) such as doped ZnO, In2O3 and SnO2 play important roles as transparent electrodes in commercial applications such as display and lighting devices. Although transparency and electrical conductivity are inherently conflicting, TCOs possess both properties simultaneously. To understand the fundamentals of TCOs, the essetials of the transparency and electrical conductivity are reviewed simply. Comprehension of the essentials enables us to develop novel TCOs following the principles of the materials design that carrier conduction paths should be constructed in wide-gap oxides. Because the electronic structure of oxides is considerably different between the conduction band and the valence band, procedures to form the conduction paths for electrons are in contrast to those for holes. In n-type TCOs, only isotropically spread ns0 orbitals of heavy cations such as Zn2+In3+ and Sn4+ are necessary to form conduction paths for electrons at the bottom of the conduction band. In p-type TCOs, however, hybridization of orbitals between oxygen 2p6 orbitals and other orbitals such as Cu 3d10Sn 5s2 and S 3p6 orbitals is essential to shape conduction paths for holes at the top of the valence band.

  • 透明導電膜の技術

    日本学術振興会透明酸化物光・電子材料第166委員会 ( 共著 )

    オーム社  2014年04月 ISBN: 978-4-274-21522-3

  • ディスプレイ材料

    木島弌倫他 ( 編者 , 担当範囲: 総論2.3節 )

    日本セラミックス協会  2013年01月 ISBN: 978-4-526-07010-5

  • 最新無期EL開発動向 ~材料特性と製造技術・応用展開~

    植田和茂 ( 共著 , 担当範囲: 第2章第3節分担執筆 )

    情報機構  2007年04月

  • 最新透明導電膜大全集 ~材料別特性と代替展望/リサイクル・工程別ノウハウ・応用別要求特性等~

    植田和茂 ( 共著 , 担当範囲: 第15章第1節分担執筆 )

    情報機構  2007年04月

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口頭発表・ポスター発表等 【 表示 / 非表示

  • "Luminescence from Eu3+ ions site-selectively doped in perovskite-type LaLuO3"

    Takuma Yoshino, Kazushige Ueda

    12th JKBT The 2nd Asian Symposium on Cutting-edge Biotechnology and Chemistry  2019年12月  -  2019年12月   

  • ペロブスカイト型LaLuO3:Eu3+中におけるEu3+発光のサイト依存性

    吉野卓馬, 植田和茂

    2019年度九州支部秋季研究発表会・九州環境セラミックス討論会  (九州大学筑紫キャンパス)  2019年11月  -  2019年11月   

  • "Luminescence from Eu3+ ions occupying A or B sites in perovskite-type LaLuO3"

    Takuma Yoshino, Kazushige Ueda

    11th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics  2019年10月  -  2019年10月   

  • XPS測定によるCaMO3(M=Ti, Zr, Sn)中のPr3+およびTb3+ 4fエネルギーの解析

    山本稜, 植田和茂

    第66回応用物理学会春季学術講演会  (東京工業大学大岡山キャンパス)  2019年03月  -  2019年03月   

  • ペロブスカイト型LaLuO3中にサイト選択添加された Eu3+イオンからの発光

    吉野卓馬, 植田和茂

    第66回応用物理学会春季学術講演会  (東京工業大学大岡山キャンパス)  2019年03月  -  2019年03月   

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報道関係 【 表示 / 非表示

  • 酸化物蛍光体を開発

    化学工業日報  2006年09月11日

    植田和茂

科研費獲得実績 【 表示 / 非表示

  • 置換サイトを区別した希土類イオン添加ペロブスカイト酸化物蛍光体の開発と蛍光評価

    基盤研究(C)

    研究期間:  2016年04月  -  2019年03月

    研究課題番号:  16K06724

  • ペロブスカイト酸化物蛍光体中における発光中心のエネルギーレベルの解析

    基盤研究(C)

    研究期間:  2010年10月  -  2013年03月

    研究課題番号:  22560668

  • ワイドギャップ導電性オキシテルライドの合成および物性評価

    若手研究(B)

    研究期間:  2003年04月  -  2005年03月

    研究課題番号:  15760497

海外研究歴 【 表示 / 非表示

  • 透明導電体および蛍光体に関する研究 (Invited Professor)

    IMN (Institut des Matériaux, Jean Rouxel), Université de Nantes  フランス共和国  研究期間:  2017年09月05日  -  2017年09月27日

  • 透明導電体および蛍光体に関する研究 (Invited Professor)

    IMN (Institut des Matériaux, Jean Rouxel), Université de Nantes  フランス共和国  研究期間:  2013年06月01日  -  2013年06月30日

 

担当授業科目 【 表示 / 非表示

  • 2019年度  無機化学Ⅱ

  • 2019年度  無機化学Ⅲ

  • 2019年度  精密無機材料合成特論

  • 2018年度  応用化学実験C

  • 2018年度  無機化学Ⅱ

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国際会議の開催 【 表示 / 非表示

  • 11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics

    2019年10月07日  -  2019年10月09日  The 166th Committee on Photonic and Electronic Oxide,Japan Society for the Promotion of Science (JSPS)