Faculty Profiles - NAGAMATSU Shuichi

Papers - NAGAMATSU Shuichi

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Structure of friction-transferred poly(p-phenylenevinylene) derivative thin films Reviewed International journal

Nagamatsu S., Misaki M., Kimura T., Yoshida Y., Tanigaki N., Yase K.

Polymer Preprints, Japan 55 ( 1 ) 2006.10

Authorship：Lead author,　Corresponding author Language：English Publishing type：Research paper (international conference proceedings)

Poly(1,4-phenylenevinylene) derivatives (PPVs) were found to form highly oriented film by a friction-transfer technique. The structural information of molecular arrangement in the friction-transferred PPVs film was investigated by polarized optical properties measurements and synchrotron-sourced grazing incidence X-ray diffraction (GIXD) analyses. The GIXD profiles of DOPPV film indicated that the polymer molecules in the friction-transferred film were perfectly arranged three-dimensionally. On the other hand, the GIXD profiles of BEHPPV film showed a quite different polymer arrangement from that of DOPPV. The polymer molecules arrangement in the friction-transferred PPVs film was found to be depending on the side-chain structure of that.

Scopus

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Structure of oriented thin films of polythiophene and its derivatives by friction transfer method Reviewed International journal

Takechi C., Nagamatsu S., Yoshida Y., Kaneko F., Tanigaki N.

Polymer Preprints, Japan 55 ( 1 ) 2006.10

Language：English Publishing type：Research paper (international conference proceedings)

Structure of highly oriented thin films of polythiophene, which were prepared by friction transfer method, was investigated using grazing-incidence X-ray diffraction (GIXD), ultraviolet-visible spectra,infrared spectra, and Raman scattering. GIXD measurements clarified that the polymer backbones were aligned with very narrow distribution. The degree of orientation of polythiophene was high compared with those of regioregular poly(3- alkylthiophene)s.

Scopus

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in situ grazing incidence x-ray diffraction study of friction-transferred poly(9,9-dioctylfluorene) thin films Reviewed International journal

Masahiro Misaki,Shuichi Nagamatsu,Masayuki Chikamatsu,Yuji Yoshida,Nobutaka Tanigaki,Kazuhiko Omote,Kiyoshi Yase,Yasukiyo Ueda

2005 International Chemical Congress of Pacific Basin Societies 858 - 858 2005.12

Structure investigation of friction-transferred poly(2,5-dioctyloxy-1,4-phenylenevinylene) thin film Reviewed International journal

Shuichi Nagamatsu,Masahiro Misaki,Yuji Yoshida,Nobutaka Tanigaki,Kiyoshi Yase

2005 International Chemical Congress of Pacific Basin Societies 0875 - 0875 2005.12

Highly polarized polymer light-emitting diodes utilizing friction-transferred poly(9,9-dioctylfluorene) thin films Reviewed International journal

Misaki M., Ueda Y., Nagamatsu S., Chikamatsu M., Yoshida Y., Tanigaki N., Yase K.

Applied Physics Letters 87 ( 24 ) 1 - 3 2005.12

Language：English Publishing type：Research paper (scientific journal)

Polarized polymer light-emitting diodes (PLEDs) have been constructed utilizing friction-transferred poly(9,9-dioctylfluorene) (PFO) thin films. The friction transfer technique allows oriented PFO to be deposited directly onto an indium tin oxide anode without an alignment layer such as polyimide. Polarized absorption and photoluminescence spectra revealed that the polymer backbones are highly aligned in the friction direction. We fabricated PLEDs consisting of friction-transferred PFO as an emissive layer, vacuum-deposited bathocuproine as an electron transport and hole-blocking layer, and a vacuum-deposited LiFAl cathode. Highly polarized blue emission with an integrated polarization ratio of 31 and a luminance of up to 300 cd m2 was observed from the PLEDs. © 2005 American Institute of Physics.

DOI： 10.1063/1.2142082

Scopus

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Highly anisotropic blue organic electroluminescent devices prepared by friction-transfer technique of poly(9,9-dioctylfluorene) Reviewed International journal

Misaki M., Nagamatsu S., Chikamatsu M., Yoshida Y., Azumi R., Tanigaki N., Ueda Y., Yase K.

IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005 ( 2 ) 1289 - 1290 2005.12

Language：English Publishing type：Research paper (international conference proceedings)

Highly oriented polyfluorene thin film was fabricated by using a friction-transfer technique to estimate the anisotropic features in molecular orientation and optical properties. It was found that the electroluminescence from this device was really polarized with the ratio of more than 30.

Scopus

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Solution-processed n -type organic thin-film transistors with high field-effect mobility Reviewed International journal

Chikamatsu M., Nagamatsu S., Yoshida Y., Saito K., Yase K., Kikuchi K.

Applied Physics Letters 87 ( 20 ) 1 - 3 2005.11

Language：English Publishing type：Research paper (scientific journal)

We report the performance of solution-processed n -type organic thin-film transistors (OTFTs) based on C60 derivatives. Long-chain alkyl-substituted C60, C60-fused N -methylpyrrolidine-meta-C12 phenyl (C60MC12), was used as a semiconducting layer. The C60MC12-thin-film transistor shows high electron mobility of 0.067 cm2 V s in saturation regime. From the result of x-ray diffraction analysis, the C60MC12 active layer forms highly ordered crystalline film. We found that self-assemble ability of long alkyl chains plays an important role for fabrication of highly ordered crystalline film, leading to achievement of high electron mobility in solution-processed n -type OTFTs. © 2005 American Institute of Physics.

DOI： 10.1063/1.2130712

Scopus

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Correlation of the Number of Thiophene Units with Structual Order and Carrier Mobility in Unsubstituted Even- and Odd-Numbered alpha-Oligothiophene Films Reviewed International journal

Shuichi Nagamatsu,Keiichi Kaneto,Reiko Azumi,Mutsuyoshi Matsumoto,Yuji Yoshida,Kiyoshi Yase

Journal of Physical Chemistry B 109 ( 19 ) 9374 - 9378 2005.05

摩擦転写法による高分子配向膜とその分子配列

永松秀一,三崎雅裕,吉田郵司,谷垣宣孝,八瀬清志

信学技報 105 ( 8 ) 31 - 36 2005.04

Structure and Thin Film Transistor Properties of Oligothiophenes with Different Chain Lengths(<Special Issue>Organic Crystals) Reviewed

Azumi Reiko, Nagamatsu Shuichi, Goto Midori, Yoshida Yuji, Yase Kiyoshi

Journal of the Japanese Association for Crystal Growth ( The Japanese Association for Crystal Growth ) 32 ( 5 ) 365 - 370 2005.01

Language：English Publishing type：Research paper (scientific journal)

Correlation was investigated between the bulk crystal structure of unsubstituted α-oligothiophenes, one of the promising organic semiconducting materials, and structural order and carrier mobility of their vacuum-evaporated thin films. X-ray single crystal analyses revealed that α-quinquethiophene (5T) and α-septithiophene (7T) molecules take more random conformation compared with even-numbered oligomers. Odd-numbered oligothiophenes deposited as thin films at low substrate temperatures present two different crystalline polymorphs, and exhibit low carrier mobilities. The parity of the number of thiophene units affects their structural order in thin films, and also, as a result, carrier mobilities in thin film transistors.

DOI： 10.19009/jjacg.32.5_365

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007327718

C60 thin-film transistors with low work-function metal electrodes Reviewed International journal

Masayuki Chikamatsu,Shuichi Nagamatsu,Tetuya Taima,Yuji Yoshida,Natsuko Sasaki,Harumi Yokokawa,Kazuhiko Saito,Kiyoshi Yase

Applied Physics Letters 85 ( 12 ) 2396 - 2398 2004.09

Formation of single-crystal-like poly(9,9-dioctylfluorene) thin film by the friction-transfer technique with subsequent thermal treatments Reviewed International journal

Masahiro Misaki,Yasukiyo Ueda,Shuichi Nagamatsu,Yuji Yoshida,Nobutaka Tanigaki,Kiyoshi Yase

Macromolecules 37 ( 18 ) 6926 - 6931 2004.09

液晶性高分子ポリフルオレン高配向膜のその場GIXD観察

三崎雅裕,永松秀一,吉田郵司,谷垣宣孝,表和彦,八瀬清志,上田裕清

KEK Proceedings PF・KENS合同研究会「ナノサイエンス・テクノロジーと放射光/中性子反射率法」 5 66 - 67 2004.04

有機半導体薄膜の分子配向制御と光電子機能デバイスへの応用

吉田郵司,永松秀一,谷垣宣孝,八瀬清志

応用物理学会有機分子・バイオエレクトロニクス分科会会誌 15 147 - 150 2004.04

Organic field-effect transistors by a wet-transferring method Reviewed International journal

Noh Y., Kim J., Yase K., Nagamatsu S.

Applied Physics Letters 83 ( 6 ) 1243 - 1245 2003.08

Language：English Publishing type：Research paper (scientific journal)

A study was performed on organic field-effect transistors (OFET). They were prepared from an epitaxially grown film, which was fabricated by using a wet-transferring process. It was found that the calculated μFETof the OFET for the wet-transferred vertically aligned film were 1.3×10-4and 2.2×10-4cm2V-1s-1at the linear and saturation regions respectively.

DOI： 10.1063/1.1600518

Scopus

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Effects of molecular alignment on carrier transport in organic transistors Reviewed International journal

Nagamatsu S., Tanigaki N., Yoshida Y., Takashima W., Yase K., Kaneto K.

Synthetic Metals 137 ( 1-3 ) 923 - 924 2003.04

Authorship：Lead author,　Corresponding author Language：English Publishing type：Research paper (international conference proceedings)

The application of molecular alignment to conjugated polymers offers a unique approach for constructing organic semiconductor devices. We made polymer thin film field-effect transistors (FET) by friction-transfer technique, based on regioregular poly(3-alkylthiophene) (P3AT). Friction-transferred films of P3AT were found to align approximately all of the polymer main-chains within a 9-13 ° range along the friction direction. When introduced in FET devices, the mobility anisotropies of 5-20 for current flow parallel and orthogonal to the friction direction has been observed. In addition, when compared with conventional isotropic FET devices of non-aligned P3AT films, they were found to enhance the mobility by a factor of 2-70.

DOI： 10.1016/S0379-6779(02)01184-0

Scopus

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LiF/Al bilayer source and drain electrodes for n-channel organic field-effect transistors Reviewed International journal

Hoshino S., Nagamatsu S., Chikamatsu M., Misaki M., Yoshida Y., Tanigaki N., Yase K.

Synthetic Metals 137 ( 1-3 ) 953 - 954 2003.04

Language：English Publishing type：Research paper (international conference proceedings)

We investigated electronic effects of an ultrathin LiF interlayer on device properties of copper(II) perfluorophthalocyanine (F16CuPc)-based field effect transistors (FETs) with Al source and drain electrodes. We observed FET operation only for the device with LiF/Al bilayer electrodes. We concluded that an effective electronic contact was formed between Al and F16CuPc layer by the presence of the LiF layer, which prevented the F16CuPc layer from reacting with Al and n-doped with dissociated Li atoms in the vicinity of the source and drain electrodes.

DOI： 10.1016/S0379-6779(02)00945-1

Scopus

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Device Performance of an n-Channel Organic Thin-Film Transistor with LiF/Al Bilayer Source and Drain Electrodes Reviewed International journal

Satoshi Hoshino,Shuichi Nagamatsu,Masayuki Chikamatsu,Masahiro Misaki,Yuji Yoshida,Nobutaka Tanigaki,Kiyoshi Yase

Japanese Journal of Applied Physics 41 ( 7A ) L808 - L810 2002.07

Device performance of an n-channel organic thin-film transistor with LiF/Al bilayer source and drain electrodes Reviewed International journal

Hoshino S., Nagamatsu S., Chikamatsu M., Misaki M., Yoshida Y., Nobutk Tnigki A., Yase K.

Japanese Journal of Applied Physics, Part 2: Letters 41 ( 7 A ) 2002.07

Language：English Publishing type：Research paper (scientific journal)

We investigated the device properties of a copper (II) perfluorophthalocyanine (F 16CuPc)-based n-channel organic thin-film transistor (TFT) with source and drain electrodes consisting of an LiF/Al bilayer. We clarified that the LiF thin film intercalated between the F 16CuPc and Al layers played a key role in the observed field-effect transistor characteristics of the TFT. We concluded that the contact resistance was effectively reduced by the LiF layer, providing protection against an unfavorable chemical reaction with Al and possible formation of n-doped regions in the vicinity of the LiF/Al electrodes of the F 16CuPc layer.

Scopus

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LiF/Al bilayer source and drain electrodes for n-channel organic field-effect transistors Reviewed International journal

Satoshi Hoshino,Shuichi Nagamatsu,Masayuki Chikamatsu,Masahiro Misaki,Yuji Yoshida,Nobutaka Tanigaki,Kiyoshi Yase

137 953 - 954 2002.04

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Papers - NAGAMATSU Shuichi