研究者詳細 - 永松　秀一

論文 - 永松　秀一

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Structure of friction-transferred poly(p-phenylenevinylene) derivative thin films 査読有り国際誌

Nagamatsu S., Misaki M., Kimura T., Yoshida Y., Tanigaki N., Yase K.

Polymer Preprints, Japan 55 ( 1 ) 2006年10月

担当区分：筆頭著者,　責任著者記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

Poly(1,4-phenylenevinylene) derivatives (PPVs) were found to form highly oriented film by a friction-transfer technique. The structural information of molecular arrangement in the friction-transferred PPVs film was investigated by polarized optical properties measurements and synchrotron-sourced grazing incidence X-ray diffraction (GIXD) analyses. The GIXD profiles of DOPPV film indicated that the polymer molecules in the friction-transferred film were perfectly arranged three-dimensionally. On the other hand, the GIXD profiles of BEHPPV film showed a quite different polymer arrangement from that of DOPPV. The polymer molecules arrangement in the friction-transferred PPVs film was found to be depending on the side-chain structure of that.

Scopus

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Structure of oriented thin films of polythiophene and its derivatives by friction transfer method 査読有り国際誌

Takechi C., Nagamatsu S., Yoshida Y., Kaneko F., Tanigaki N.

Polymer Preprints, Japan 55 ( 1 ) 2006年10月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

Structure of highly oriented thin films of polythiophene, which were prepared by friction transfer method, was investigated using grazing-incidence X-ray diffraction (GIXD), ultraviolet-visible spectra,infrared spectra, and Raman scattering. GIXD measurements clarified that the polymer backbones were aligned with very narrow distribution. The degree of orientation of polythiophene was high compared with those of regioregular poly(3- alkylthiophene)s.

Scopus

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in situ grazing incidence x-ray diffraction study of friction-transferred poly(9,9-dioctylfluorene) thin films 査読有り国際誌

Masahiro Misaki,Shuichi Nagamatsu,Masayuki Chikamatsu,Yuji Yoshida,Nobutaka Tanigaki,Kazuhiko Omote,Kiyoshi Yase,Yasukiyo Ueda

2005 International Chemical Congress of Pacific Basin Societies 858 - 858 2005年12月

Structure investigation of friction-transferred poly(2,5-dioctyloxy-1,4-phenylenevinylene) thin film 査読有り国際誌

Shuichi Nagamatsu,Masahiro Misaki,Yuji Yoshida,Nobutaka Tanigaki,Kiyoshi Yase

2005 International Chemical Congress of Pacific Basin Societies 0875 - 0875 2005年12月

Highly polarized polymer light-emitting diodes utilizing friction-transferred poly(9,9-dioctylfluorene) thin films 査読有り国際誌

Misaki M., Ueda Y., Nagamatsu S., Chikamatsu M., Yoshida Y., Tanigaki N., Yase K.

Applied Physics Letters 87 ( 24 ) 1 - 3 2005年12月

記述言語：英語掲載種別：研究論文（学術雑誌）

Polarized polymer light-emitting diodes (PLEDs) have been constructed utilizing friction-transferred poly(9,9-dioctylfluorene) (PFO) thin films. The friction transfer technique allows oriented PFO to be deposited directly onto an indium tin oxide anode without an alignment layer such as polyimide. Polarized absorption and photoluminescence spectra revealed that the polymer backbones are highly aligned in the friction direction. We fabricated PLEDs consisting of friction-transferred PFO as an emissive layer, vacuum-deposited bathocuproine as an electron transport and hole-blocking layer, and a vacuum-deposited LiFAl cathode. Highly polarized blue emission with an integrated polarization ratio of 31 and a luminance of up to 300 cd m2 was observed from the PLEDs. © 2005 American Institute of Physics.

DOI： 10.1063/1.2142082

Scopus

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Highly anisotropic blue organic electroluminescent devices prepared by friction-transfer technique of poly(9,9-dioctylfluorene) 査読有り国際誌

Misaki M., Nagamatsu S., Chikamatsu M., Yoshida Y., Azumi R., Tanigaki N., Ueda Y., Yase K.

IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005 ( 2 ) 1289 - 1290 2005年12月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

Highly oriented polyfluorene thin film was fabricated by using a friction-transfer technique to estimate the anisotropic features in molecular orientation and optical properties. It was found that the electroluminescence from this device was really polarized with the ratio of more than 30.

Scopus

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Solution-processed n -type organic thin-film transistors with high field-effect mobility 査読有り国際誌

Chikamatsu M., Nagamatsu S., Yoshida Y., Saito K., Yase K., Kikuchi K.

Applied Physics Letters 87 ( 20 ) 1 - 3 2005年11月

記述言語：英語掲載種別：研究論文（学術雑誌）

We report the performance of solution-processed n -type organic thin-film transistors (OTFTs) based on C60 derivatives. Long-chain alkyl-substituted C60, C60-fused N -methylpyrrolidine-meta-C12 phenyl (C60MC12), was used as a semiconducting layer. The C60MC12-thin-film transistor shows high electron mobility of 0.067 cm2 V s in saturation regime. From the result of x-ray diffraction analysis, the C60MC12 active layer forms highly ordered crystalline film. We found that self-assemble ability of long alkyl chains plays an important role for fabrication of highly ordered crystalline film, leading to achievement of high electron mobility in solution-processed n -type OTFTs. © 2005 American Institute of Physics.

DOI： 10.1063/1.2130712

Scopus

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Correlation of the Number of Thiophene Units with Structual Order and Carrier Mobility in Unsubstituted Even- and Odd-Numbered alpha-Oligothiophene Films 査読有り国際誌

Shuichi Nagamatsu,Keiichi Kaneto,Reiko Azumi,Mutsuyoshi Matsumoto,Yuji Yoshida,Kiyoshi Yase

Journal of Physical Chemistry B 109 ( 19 ) 9374 - 9378 2005年05月

摩擦転写法による高分子配向膜とその分子配列

永松秀一,三崎雅裕,吉田郵司,谷垣宣孝,八瀬清志

信学技報 105 ( 8 ) 31 - 36 2005年04月

分子長の異なるオリゴチオフェンの構造とFET(<小特集>有機結晶の新展開) 査読有り

阿澄玲子, 永松秀一, 後藤みどり, 吉田郵司, 八瀬清志

日本結晶成長学会誌 ( 日本結晶成長学会 ) 32 ( 5 ) 365 - 370 2005年01月

記述言語：英語掲載種別：研究論文（学術雑誌）

本稿では,優れた特性を示す有機半導体として注目されている無置換α-オリゴチオフェンを材料に,そのバルクでの結晶構造と薄膜で出現する結晶相,また,電荷移動度との関係について論じる.単結晶構造解析の結果から,5量体および7量体では,偶数のチオフェン環をもつオリゴマーに比べ,結晶内での分子のコンフォメーションの乱れが大きくなる傾向があることが明らかになった.また,5量体および7量体では,蒸着条件によって2つの結晶相が薄膜内に共存する場合があった.チオフェン環の数の偶奇は,薄膜の成長様式に差異を与え,結果的に薄膜トランジスタの物性に影響を与えうることが明らかになった.

DOI： 10.19009/jjacg.32.5_365

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/110007327718

C60 thin-film transistors with low work-function metal electrodes 査読有り国際誌

Masayuki Chikamatsu,Shuichi Nagamatsu,Tetuya Taima,Yuji Yoshida,Natsuko Sasaki,Harumi Yokokawa,Kazuhiko Saito,Kiyoshi Yase

Applied Physics Letters 85 ( 12 ) 2396 - 2398 2004年09月

Formation of single-crystal-like poly(9,9-dioctylfluorene) thin film by the friction-transfer technique with subsequent thermal treatments 査読有り国際誌

Masahiro Misaki,Yasukiyo Ueda,Shuichi Nagamatsu,Yuji Yoshida,Nobutaka Tanigaki,Kiyoshi Yase

Macromolecules 37 ( 18 ) 6926 - 6931 2004年09月

液晶性高分子ポリフルオレン高配向膜のその場GIXD観察

三崎雅裕,永松秀一,吉田郵司,谷垣宣孝,表和彦,八瀬清志,上田裕清

KEK Proceedings PF・KENS合同研究会「ナノサイエンス・テクノロジーと放射光/中性子反射率法」 5 66 - 67 2004年04月

有機半導体薄膜の分子配向制御と光電子機能デバイスへの応用

吉田郵司,永松秀一,谷垣宣孝,八瀬清志

応用物理学会有機分子・バイオエレクトロニクス分科会会誌 15 147 - 150 2004年04月

Organic field-effect transistors by a wet-transferring method 査読有り国際誌

Noh Y., Kim J., Yase K., Nagamatsu S.

Applied Physics Letters 83 ( 6 ) 1243 - 1245 2003年08月

記述言語：英語掲載種別：研究論文（学術雑誌）

A study was performed on organic field-effect transistors (OFET). They were prepared from an epitaxially grown film, which was fabricated by using a wet-transferring process. It was found that the calculated μFETof the OFET for the wet-transferred vertically aligned film were 1.3×10-4and 2.2×10-4cm2V-1s-1at the linear and saturation regions respectively.

DOI： 10.1063/1.1600518

Scopus

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Effects of molecular alignment on carrier transport in organic transistors 査読有り国際誌

Nagamatsu S., Tanigaki N., Yoshida Y., Takashima W., Yase K., Kaneto K.

Synthetic Metals 137 ( 1-3 ) 923 - 924 2003年04月

担当区分：筆頭著者,　責任著者記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

The application of molecular alignment to conjugated polymers offers a unique approach for constructing organic semiconductor devices. We made polymer thin film field-effect transistors (FET) by friction-transfer technique, based on regioregular poly(3-alkylthiophene) (P3AT). Friction-transferred films of P3AT were found to align approximately all of the polymer main-chains within a 9-13 ° range along the friction direction. When introduced in FET devices, the mobility anisotropies of 5-20 for current flow parallel and orthogonal to the friction direction has been observed. In addition, when compared with conventional isotropic FET devices of non-aligned P3AT films, they were found to enhance the mobility by a factor of 2-70.

DOI： 10.1016/S0379-6779(02)01184-0

Scopus

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LiF/Al bilayer source and drain electrodes for n-channel organic field-effect transistors 査読有り国際誌

Hoshino S., Nagamatsu S., Chikamatsu M., Misaki M., Yoshida Y., Tanigaki N., Yase K.

Synthetic Metals 137 ( 1-3 ) 953 - 954 2003年04月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

We investigated electronic effects of an ultrathin LiF interlayer on device properties of copper(II) perfluorophthalocyanine (F16CuPc)-based field effect transistors (FETs) with Al source and drain electrodes. We observed FET operation only for the device with LiF/Al bilayer electrodes. We concluded that an effective electronic contact was formed between Al and F16CuPc layer by the presence of the LiF layer, which prevented the F16CuPc layer from reacting with Al and n-doped with dissociated Li atoms in the vicinity of the source and drain electrodes.

DOI： 10.1016/S0379-6779(02)00945-1

Scopus

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Device Performance of an n-Channel Organic Thin-Film Transistor with LiF/Al Bilayer Source and Drain Electrodes 査読有り国際誌

Satoshi Hoshino,Shuichi Nagamatsu,Masayuki Chikamatsu,Masahiro Misaki,Yuji Yoshida,Nobutaka Tanigaki,Kiyoshi Yase

Japanese Journal of Applied Physics 41 ( 7A ) L808 - L810 2002年07月

Device performance of an n-channel organic thin-film transistor with LiF/Al bilayer source and drain electrodes 査読有り国際誌

Hoshino S., Nagamatsu S., Chikamatsu M., Misaki M., Yoshida Y., Nobutk Tnigki A., Yase K.

Japanese Journal of Applied Physics, Part 2: Letters 41 ( 7 A ) 2002年07月

記述言語：英語掲載種別：研究論文（学術雑誌）

We investigated the device properties of a copper (II) perfluorophthalocyanine (F 16CuPc)-based n-channel organic thin-film transistor (TFT) with source and drain electrodes consisting of an LiF/Al bilayer. We clarified that the LiF thin film intercalated between the F 16CuPc and Al layers played a key role in the observed field-effect transistor characteristics of the TFT. We concluded that the contact resistance was effectively reduced by the LiF layer, providing protection against an unfavorable chemical reaction with Al and possible formation of n-doped regions in the vicinity of the LiF/Al electrodes of the F 16CuPc layer.

Scopus

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LiF/Al bilayer source and drain electrodes for n-channel organic field-effect transistors 査読有り国際誌

Satoshi Hoshino,Shuichi Nagamatsu,Masayuki Chikamatsu,Masahiro Misaki,Yuji Yoshida,Nobutaka Tanigaki,Kiyoshi Yase

Synthetic Metals 137 953 - 954 2002年04月

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