IZUMI Akira

写真a

Title

Professor

Laboratory

1-1 Sensui-cho, Tobata-ku, Kitakyushu-shi, Fukuoka

Research Fields, Keywords

Scopus Paper Info  
Total Paper Count: 0  Total Citation Count: 0  h-index: 3

Citation count denotes the number of citations in papers published for a particular year.

Undergraduate Education 【 display / non-display

  • 1990.03   The University of Electro-Communications   Faculty of Electro Communications   Graduated   JAPAN

Post Graduate Education 【 display / non-display

  • 1996.03  Tokyo Institute of Technology  Graduate School, Division of Integrated Science and Engineering  Doctoral Program  Completed  JAPAN

Degree 【 display / non-display

  • Tokyo Institute of Technology -  Doctor of Engineering  1996.03

Biography in Kyutech 【 display / non-display

  • 2013.04
    -
    2014.03

    Kyushu Institute of TechnologyGraduate School of Engineering   Department of Electrical Engineering and Electronics   Professor  

  • 2009.10
    -
    Now

    Kyushu Institute of TechnologyFaculty of Engineering   Department of Electrical Engineering and Electronics   Professor  

 

Publications (Article) 【 display / non-display

  • n-Type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation

    Katamune Y., Mori D., Arikawa D., Izumi A., Shimaoka T., Ichikawa K., Koizumi S.

    Applied Physics A: Materials Science and Processing    126 ( 11 )   2020.11  [Refereed]

     View Summary

    © 2020, Springer-Verlag GmbH Germany, part of Springer Nature. Epitaxial growth of n-type semiconductor diamond films on (111)-oriented diamond has been achieved by hot-filament chemical vapor deposition (HFCVD) using a methane source and a trimethylphosphine dopant source. Secondary-ion mass spectrometry showed that the phosphorus atoms are incorporated into the films in the concentration range of 1018–1019 cm−3 from the vapor phase. Hall-effect measurements confirmed n-type conductivity in a wide temperature range up to 873 K. Electrons are thermally activated from a phosphorus donor level of approximately 0.57 eV as dominant carriers under the presence of tungsten atoms with concentrations of around 1018 cm−3 from filaments. These results indicate that HFCVD has the potential to be applied to an n-type doping process for fabricating diamond electronic devices in the phosphorus concentration range of not lower than 1018 cm−3.

    DOI Scopus

  • Control of the chemical composition of silicon carbon nitride films formed from hexamethyldisilazane in H<inf>2</inf>/NH<inf>3</inf> mixed gas atmospheres by hot-wire chemical vapor deposition

    Katamune Y., Mori H., Morishita F., Izumi A.

    Thin Solid Films    695   2020.02  [Refereed]

     View Summary

    © 2019 Elsevier B.V. Silicon carbon nitride (SiCN) films were deposited by hot-wire chemical vapor deposition using hexamethyldisilazane (HMDS) as the single source gas diluted in ammonia (NH3) and hydrogen (H2) gas mixtures. The chemical composition of the SiCN films was controlled by adjusting the NH3/H2 flow rate ratio. X-ray photoelectron spectroscopy measurements revealed that the carbon and nitrogen contents of the films were controllable from 10 to 35 at.%, while the silicon content remained almost constant at 45 at.%. Although the homogeneity of the SiCN films deposited using HMDS diluted only with H2 degraded with increasing stage temperature from 400 to 800 °C, it was improved by replacing H2 with NH3. Upon introducing NH3, the nitrogen content increased as carbon content decreased accompanied by the replacement of Si[sbnd]C and C[sbnd]C bonds by Si[sbnd]N, N[sbnd]H, and C[sbnd]H bonds, which led to the deterioration of the mechanical properties of the SiCN films.

    DOI Scopus

  • Formation of phosphorus-incorporated diamond films by hot-filament chemical vapor deposition using organic phosphorus solutions

    Katamune Y., Arikawa D., Mori D., Izumi A.

    Thin Solid Films    677   28 - 32   2019.05  [Refereed]

     View Summary

    © 2019 Phosphorus-incorporated polycrystalline diamond films were grown on Si substrates by hot-filament chemical vapor deposition using a low-risk organic phosphorus solution as a source gas, similarly to metal-organic chemical vapor deposition. The effects of growth conditions, including stage temperature, and C/H ratio, on the nucleation and crystal growth on Si surfaces, were investigated. We demonstrated that the polycrystalline films with smooth facets are formed at a stage temperature of 700 °C and a C/H ratio of 0.3%. Phosphorus incorporation into the films was confirmed from wavelength dispersive spectrometric measurements equipped with an electron probe microanalyzer.

    DOI Scopus

  • Low-temperature silicon oxidation using oxidizing radicals produced by catalytic decomposition of H

      57 ( 12 )   2018.10

     View Summary

    The surface oxidization of Si(100) substrates by oxidizing species generated by the catalytic decomposition of H<inf>2</inf>O precursors on a heated tungsten wire in a mixed H<inf>2</inf>O/H<inf>2</inf>gas atmosphere was investigated. The formation of Si oxide layers was realized at stage temperatures of not more than 350 °C. From X-ray photoelectron spectroscopy measurements, their thicknesses were estimated to be 1–2 nm. In the tungsten wire temperature range from 1000 to 1450 °C, the oxidation of the wire was suppressed at H<inf>2</inf>O/H<inf>2</inf>ratios of not more than 0.2%, which hardly caused tungsten contamination of the oxide layers.

    DOI CiNii

  • Growth of diamond thin films on SiCN underlayers by hot filament chemical vapor deposition

      635   53 - 57   2017.08  [Refereed]

     View Summary

    © 2016 Elsevier B.V. Silicon carbon nitride (SiCN) is a candidate as underlayer materials for the growth of diamond thin films for hard coating. Diamond thin films were grown on SiCN layers deposited on Si substrates and directly on the Si substrates for comparison, to investigate the availability of the SiCN underlayers. Both diamond films and SiCN underlayers were deposited by hot filament chemical vapor deposition (HF-CVD). The source gas for the SiCN films deposition was hexamethyldisilazane represented as (CH 3 ) 3 SiNHSi(CH 3 ) 3 . The number density of diamond crystallites grown on the SiCN underlayers was low as compared with that of the films deposited on the Si substrate. The number density is not affected by the scratch pretreatment of the SiCN underlayers with diamond powder, which is clearly different from that of the films grown on the pretreated Si substrates. This might be because the SiCN films deposited at low temperatures less than 400 °C cannot keep the surface morphology formed by the scratch treatment under the high-temperature growth condition of the diamond films.

    DOI Scopus

display all >>

Conference Prsentations (Oral, Poster) 【 display / non-display

  • 有機液体原料を用いたHWCVD法によるSiCN薄膜の耐候性評価

    第3回Cat-CVD研究会講演要旨集  ( 長岡)  2006.06  -  2006.06 

  • 有機液体原料を用いたHW-CVD法によるSiCN薄膜の堆積とその電気的特性評価

    第3回Cat-CVD研究会講演要旨集  ( 長岡)  2006.06  -  2006.06 

  • 加熱触媒体により生成した原子状水素による金属の洗浄

    新規な薄膜・表面現象とその応用の最前線関する研究会((兼)第11回九州薄膜・表面研究会)  ( 北九州)  2006.06  -  2006.06 

  • 有機液体原料を用いたホットワイヤーCVD法におけるシリコン炭窒化膜の堆積

    新規な薄膜・表面現象とその応用の最前線関する研究会((兼)第11回九州薄膜・表面研究会)  ( 北九州)  2006.06  -  2006.06 

  • 原子状水素によるRu酸化膜還元処理の基礎検討(II)

    第53回応用物理学会関係連合会講演予稿集  ( 武蔵工業大学)  2006.03  -  2006.03 

display all >>