Papers - SATAKE Akihiro
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Enhanced capture of photogenerated carriers by optimum forward bias condition in blue and green (In,Ga)N single-quantum-well diodes Reviewed
A. Satake,K. Soejima,H. Aizawa,K. Fujiwara
physica status solidi (c) 5 ( 6 ) 2123 - 2125 2008.05
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Comparative study of temperature-dependent electroluminescence efficiency in blue and green (In,Ga)N multiple-quantum-well diodes Reviewed
H. Jimi,T. Inada,M. Horiguchi,A. Satake,K. Fujiwara
physica status solidi (c) 5 ( 6 ) 2105 - 2107 2008.05
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Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes Reviewed
T. Inada,A. Satake,and K. Fujiwara
Physica Status Solidi (c) 4 ( 7 ) 2768 - 2771 2007.04
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Vertical transport in all-binary GaAs/AlAs short-period superlattices and carrier trapping and detrapping dynamics by different quantum wells Reviewed
K. Fujiwara,A. Satake,L. Schrottke,R. Hey,and H. T. Grahn
Physica Status Solidi (b) 244 ( 8 ) 2926 - 2935 2007.04
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Carrier capture and escape processes in (In,Ga)N single-quantum-well diode under forward bias condition by photoluminescence spectroscopy Reviewed
A. Satake,K. Soejima,H. Aizawa,and K. Fujiwara
Physica Status Solidi (c) 3 ( 6 ) 2203 - 2206 2006.04
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Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes Reviewed
H. Aizawa,K. Soejima,A. Hori,A. Satake,and K. Fujiwara
Physica Status Solidi (c) 3 ( 3 ) 589 - 593 2006.02
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Stokes and anti-Stokes photoluminescence towards five different Inx(Al0.17Ga0.83)1-xAs/ Al0.17Ga0.83As quantum wells Reviewed
S. Machida,T. Tadakuma,A. Satake,K. Fujiwara,J.R. Folkenberg,J.M. Hvam
Journal of Applied Physics 98 ( 8 ) 83527 - 83527 2005.04
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"Enhanced radiative efficiency in blue (In,Ga)N multiple-quantum-well light-emitting diodes with an electron reservoir layer" Reviewed
Y. Takahashi,A. Satake,K. Fujiwara,J. K. Shue,U. Jahn,H. Kostial and H. T. Grahn
Physica E 21 876 - 880 2004.04
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"Strong photoluminescence emission from an excited-subband exciton state in a GaAs/AlxGa1-xAs triple quantum well with different well thicknesses" Reviewed
A. Satake,N. Shiraishi,N. Takata,K. Fujiwara,L. Schrottke,and H. T. Grahn
Physica E 21 641 - 645 2004.04
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"Temperature-dependent electroluminescence anomalies influenced by injection current level in InGaN single-quantum-well diodes" Reviewed
P. Bakmiwewa,A. Hori,A. Satake and K. Fujiwara
Physica E 21 636 - 640 2004.04
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"Ultra-low-frequency self-oscillation of photocurrent in InxGa1-xAs/Al0.15Ga0.85As multiple-quantum-well p-i-n diodes" Reviewed
A. Satake,K. Tanigawa,T. Kimura,K. Fujiwara,and N. Sano
Appl. Phys. Lett. 85 3483 - 3485 2004.04
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High-energy excitonic photoluminescence due to carrier injection from the barriers into the first excited subband in a GaAs/AlxGa1-xAs quantum well Reviewed
T. Tsukamoto,N. Shiraishi,A. Satake,K. Fujiwara,and H. T. Grahn
Proceedings of 13th International Semiconducting and Insulating Materials Conference 271 - 275 2004.04
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Observation of ultra-low frequency photocurrent self-oscillation in InXGa1-XAs quantum wells Reviewed
K. Tanigawa,T. Kimura,A. Satake,K. Fujiwara,and N. Sano
Proceedings of 16th International Conference on Indium Phosphide and Related Materials 268 - 271 2004.04
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Competitive capture of photoexcited carriers in a novel step-graded InX(Al0.17Ga0.83)1-XAs quantum well heterostructure Reviewed
T. Tadakuma,S. Machida,A. Satake,K. Fujiwara,J.R. Folkenberg and J.M. Hvam
Proceedings of 16th International Conference on Indium Phosphide and Related Materials 257 - 260 2004.04
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Impact of the forward bias on the radiative recombination efficiency in blue (In,Ga)N/GaN quantum-well diodes with an electron reservoir layer Reviewed
N. Otsuji,Y. Takahashi,A. Satake,K. Fujiwara,J. K. Shue,U. Jahn,H. Kostial,and H. T. Grahn
Proceedings of 13th International Semiconducting and Insulating Materials Conference 276 - 280 2004.04
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"Asymmetric external electric field effects on luminescence intensity of InGaN single-quantum-well light-emitting diode"" Reviewed
A. Satake,A. Hori,Y. Takahashi,D. Yasunaga and K. Fujiwara
Inst. Phys. Conf. Ser. 171 D110 - D110 2003.04
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"Temperature and injected current dependence of electroluminescence intensity in green and blue InGaN single-quantum-well light-emitting diodes" Reviewed
A. Hori,D. Yasunaga,A. Satake and K. Fujiwara
J. Appl. Phys. 93 3152 - 3157 2003.04
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"Temperature and current dependent capture injected carriers in InGaN single-quantum-well light-emitting diodes" Reviewed
A. Hori,D. Yasunaga,A. Satake and K. Fujiwara
Phys. Stat. Sol. (a) 192 44 - 48 2002.04
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"Anomalous temperature dependence of the photoluminescence properties in GaAs triple quantum wells with growth islands" Reviewed
A. Satake,K. Hayata,N. Shiraishi,K. Fujiwara,L. Schrottke,R. Hey and H. T. Grahn
Inst. Phys. Conf. Ser. 170 473 - 478 2002.04
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"Dynamical transport of photoexcited carriers between a narrow and a wide quantum well embedded in a GaAs/AlAs superlattice" Reviewed
A. Satake,T. Ikemoto,K. Fujiwara,L. Schrottke,R. Hey and H. T. Grahn
Physica E 13 711 - 714 2002.04