Updated on 2023/08/29

 
ISHIMARU Manabu
 
Scopus Paper Info  
Total Paper Count: 0  Total Citation Count: 0  h-index: 18

Citation count denotes the number of citations in papers published for a particular year.

Affiliation
Faculty of Engineering Department of Materials Science
Job
Professor
External link

Research Interests

  • quantum beam technology

  • transmission electron microscopy

  • structure analysis

Undergraduate Education

  • 1989.03   Tokyo Institute of Technology   Faculty of Science and Engineering   Graduated   Japan

Post Graduate Education

  • 1994.03   Kyushu University   Graduate School, Division of Integrated Science and Engineering   Doctoral Program   Completed   Japan

  • 1991.03   Tokyo Institute of Technology   Graduate School, Division of Science and Engineering   Master's Course   Completed   Japan

Degree

  • Kyushu University  -  Doctor of Engineering   1994.03

Biography in Kyutech

  • 2013.04
     

    Kyushu Institute of Technology   Faculty of Engineering   Department of Materials Science   Professor  

  • 2022.04
    -
    2023.03
     

    Kyushu Institute of Technology   Faculty of Engineering   Department of Basic Sciences  

  • 2022.04
    -
    2023.03
     

    Kyushu Institute of Technology   Faculty of Engineering  

  • 2016.04
    -
    2018.03
     

    Kyushu Institute of Technology   Center for Instrumental Analysis  

Biography before Kyutech

  • 2007.04 - 2013.03   Osaka University   Associate Professor   Japan

  • 2000.05 - 2007.03   Osaka University   Associate Professor (as old post name)   Japan

  • 1998.07 - 1999.07   米国ロスアラモス国立研究所   客員研究員   United States

  • 1994.04 - 2000.04   Kyushu University   Research Assistant   Japan

Academic Society Memberships

  • 2002.04   日本顕微鏡学会   Japan

  • 2000.04 - 2002.03   日本電子顕微鏡学会   Japan

  • 1994.09   応用物理学会   Japan

  • 1990.09   日本金属学会   Japan

Papers

  • Explosive crystallization of amorphous germanium-tin films by irradiation with a 3-keV electron beam Reviewed

    Nakamura R., Miyamoto M., Ishimaru M.

    Journal of Applied Physics   133 ( 18 )   2023.05

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1063/5.0147022

    Kyutacar

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  • Planar defects-induced low thermal conductivity in a superhard material SiB<inf>6</inf> Reviewed International journal

    Tanusilp S.a., Kumagai M., Ohishi Y., Ishimaru M., Sadayori N., Kurosaki K.

    Journal of Alloys and Compounds   939   2023.04

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    DOI: 10.1016/j.jallcom.2023.168744

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  • Thermoelectric Property of SnSe Films on Glass Substrate: Influence of Columnar Grain Boundary on Carrier Scattering Reviewed International journal

    Horide T., Murakami Y., Ishimaru M., Matsumoto K.

    ACS Applied Electronic Materials   4 ( 12 )   6364 - 6372   2022.12

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    DOI: 10.1021/acsaelm.2c01486

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  • Anomalous structural phase transformation in swift heavy ion-irradiated δ-Sc<inf>4</inf>Hf<inf>3</inf>O<inf>12</inf> Invited Reviewed International journal

    Iwasaki M., Kanazawa Y., Manago D., Patel M.K., Baldinozzi G., Sickafus K.E., Ishimaru M.

    Journal of Applied Physics   132 ( 7 )   2022.08

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    DOI: 10.1063/5.0098518

    Kyutacar

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  • Self-Organized Nanocomposite Structure Controlled by Elemental Site Occupancy to Improve Vortex Pinning in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7</inf>Superconducting Films Reviewed International journal

    Horide T., Yoshida Y., Kita R., Gondo M., Ishimaru M., Matsumoto K.

    ACS Applied Electronic Materials   4 ( 6 )   3018 - 3026   2022.06

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    DOI: 10.1021/acsaelm.2c00438

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  • Impact of annealing on electric and elastic properties of 10-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> films prepared on Si by sputtering Reviewed International journal

    Bolotov L., Migita S., Fujio R., Ishimaru M., Hatayama S., Uchida N.

    Microelectronic Engineering   258   2022.04

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    DOI: 10.1016/j.mee.2022.111770

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  • Electron diffraction radial distribution function analysis of amorphous boron carbide synthesized by ion beam irradiation and chemical vapor deposition Reviewed International journal

    Ishimaru M., Nakamura R., Zhang Y., Weber W.J., Peterson G.G., Ianno N.J., Nastasi M.

    Journal of the European Ceramic Society   42 ( 2 )   376 - 382   2022.02

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    DOI: 10.1016/j.jeurceramsoc.2021.10.020

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  • Aligned Self-Organization Induced by Epitaxial Stress and Shear Deformation in Jahn–Teller Spinel ZnMnGaO<inf>4</inf> Reviewed

    Horide T., Morishita K., Horibe Y., Usuki M., Ishimaru M., Matsumoto K.

    Journal of Physical Chemistry C   126 ( 1 )   806 - 814   2022.01

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    DOI: 10.1021/acs.jpcc.1c09324

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  • Investigation of Nanoscale Phase Formation in Rapidly Solidified Fe<sub>20</sub>Co<sub>20</sub>Ni<sub>20</sub>Cr<sub>20</sub>B<sub>20−</sub><i><sub>x</sub></i>Si<i><sub>x</sub></i> Alloys Reviewed International journal

    Zhang Yicheng, Inoue Koji, Ishimaru Manabu, Tokunaga Tatsuya, Era Hidenori

    MATERIALS TRANSACTIONS ( The Japan Institute of Metals and Materials )   advpub ( 0 )   1211 - 1216   2022.01

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    <p>In this study, nanoscale phase formation in rapidly solidified Fe<sub>20</sub>Co<sub>20</sub>Ni<sub>20</sub>Cr<sub>20</sub>B<sub>20−</sub><i><sub>x</sub></i>Si<i><sub>x</sub></i> alloys was investigated using atom probe tomography (APT) and transmission electron microscopy (TEM). According to previous X-ray diffraction measurements and scanning electron microscopy with energy-dispersive X-ray spectroscopy results, it was thought that this alloy system was composed of almost a single face-centered cubic (FCC) solid solution phase when the Si content was 5 at.%. However, APT and TEM results at the nanoscale showed that both an FCC solid solution and compound phases formed for all alloy compositions. The rapidly solidified alloy ribbon with a Si content of 5 at.% showed the presence of nanoscale FCC and Cr<sub>2</sub>B phases. Furthermore, in addition to the nanoscale FCC and Cr<sub>2</sub>B phases, a nanoscale Cr<sub>3</sub>Ni<sub>5</sub>Si<sub>2</sub> phase was observed when the Si content exceeded 7.5 at.%.</p>

    DOI: 10.2320/matertrans.mt-m2022058

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  • Thermoelectric Property of n-Type Bismuth-Doped SnSe Film: Influence of Characteristic Film Defect Reviewed

    Horide T., Nakamura K., Hirayama Y., Morishita K., Ishimaru M., Matsumoto K.

    ACS Applied Energy Materials   4 ( 9 )   9563 - 9571   2021.09

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    DOI: 10.1021/acsaem.1c01722

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  • Review of “12th Japanese-Polish Joint Seminar on Micro and Nano Analysis (August 29–September 1, 2018)” Reviewed

    Ishimaru Manabu

    MATERIALS TRANSACTIONS ( The Japan Institute of Metals and Materials )   62 ( 9 )   1420 - 1423   2021.09

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    <p>“The 12th Japanese-Polish Joint Seminar on Micro and Nano Analysis” was held in Fukuoka, Japan from August 29 to September 1, 2018, and the proceedings were published in May, 2019, as a special issue of Materials Transactions (Vol. 60, No. 5). The main purpose of this seminar is to discuss the structural analysis of materials by electron microscopy techniques. Among the papers presented at the seminar, this article briefly reviews the following topics: observations of dislocations in a thick specimen by ultra-high voltage electron microscopy, suppression of geometric phase shift due to antiphase boundaries in dark-field electron holography, and structural characterization of amorphous materials by electron diffraction techniques.</p>

    DOI: 10.2320/matertrans.MT-M2021094

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  • Explosive crystallization of sputter-deposited amorphous germanium films by irradiation with an electron beam of SEM-level energies Reviewed

    Nakamura R., Matsumoto A., Ishimaru M.

    Journal of Applied Physics   129 ( 21 )   2021.06

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    The crystallization of sputter-deposited substrate-free films of amorphous germanium was induced by electron irradiation at SEM-level energies of less than 20 keV at ambient temperature using an electron probe microanalyzer. Instantaneous crystallization, referred to as explosive crystallization, occurred consistently at 2-20 keV; the threshold of electron fluxes is 1015-1016 m−2 s−1, which is five to six orders of magnitude lower than those at 100 keV reported previously. This process is expected to be advantageous in the production of polycrystalline Ge films since it is rapid, requires little energy, and results in negligible damage to the substrate.

    DOI: 10.1063/5.0052142

    Kyutacar

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  • Nanostructures and flux pinning properties in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7- y </inf>thin films with double perovskite Ba<inf>2</inf>LuNbO<inf>6</inf>nanorods Reviewed

    Gondo M., Yoshida M., Yoshida Y., Ishimaru M., Horide T., Matsumoto K., Kita R.

    Journal of Applied Physics   129 ( 19 )   2021.05

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    Double perovskite Ba2LuNbO6 (BLNO)-doped YBa2Cu3O7-y (YBCO) thin films are fabricated on a SrTiO3 (001) substrate by pulsed laser deposition, and their nanostructures are characterized by transmission electron microscopy and scanning transmission electron microscopy. Cross-sectional observations and elemental mapping reveal that BLNO self-assembles during thin film deposition, and consequently, nanorods extending straight from the substrate to the surface are formed in the YBCO thin films. It is confirmed that stacking faults perpendicular to the growth direction disturb the formation of BLNO nanorods. Strain maps extracted by geometric phase analysis reveal that the tensile strain occurs in the YBCO matrix around the BLNO nanorods. Misfit dislocations are periodically introduced at the interface between the nanorod and the matrix, which results in the inhomogeneous strain of YBCO around the BLNO nanorods. The superconducting properties of the YBCO + BLNO thin films are compared with those of other previously reported YBCO thin films with normal perovskite and double perovskite nanorods.

    DOI: 10.1063/5.0048693

    Kyutacar

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  • Enhancement of Thermoelectric Properties of n-Type Bi<inf>2</inf>Te<inf>3- x</inf>Se<inf>x</inf>by Energy Filtering Effect Reviewed

    Kawajiri Y., Tanusilp S.A., Kumagai M., Ishimaru M., Ohishi Y., Tanaka J., Kurosaki K.

    ACS Applied Energy Materials   2021.01

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    DOI: 10.1021/acsaem.1c02560

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  • Structure analysis of Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> thin films crystallized from amorphous phase by thermal annealing below 500°C Reviewed

    Fujio R., Ishimaru M., Migita S., Uchida N.

    2021 Silicon Nanoelectronics Workshop, SNW 2021   2021.01

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)

    DOI: 10.1109/SNW51795.2021.00018

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  • アモルファスGeSnの結晶化におけるSnの振る舞い Invited Reviewed

    石丸 学, 仲村龍介

    まてりあ   59 ( 12 )   662 - 668   2020.12

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    DOI: 10.2320/materia.59.662

  • Combined effect of nanorod and stacking fault for improving nanorod interface in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7-δ</inf>nanocomposite films Reviewed

    Horide T., Ishimaru M., Sato K., Matsumoto K.

    Superconductor Science and Technology   33 ( 11 )   2020.11

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    Self-organized nanorods in YBa2Cu3O7-δ films are important pinning centers from the technical and fundamental views. While influence of nanoscale factors (>4-5 nm) on the vortex pinning has already been discussed in detail, the interface control of nanorods (at the smaller scale) has not yet been performed. Here, it is demonstrated that the stacking faults can control the nanorod interface to improve the vortex pinning. The stacking faults were formed across the nanorods by post-annealing the YBa2Cu3O7-δ films containing BaMO3 (M = Zr, Sn, Hf) nanorods. The strong bonding between YBa2Cu3O7-δ and BaMO3 varies the atomic position of YBa2Cu3O7-δ, degrading an interface sharpness and an elementary pinning force of the nanorod. Scanning transmission electron microscopy and density functional theory calculation clarified that the stacking faults broke the strong bonding between YBa2Cu3O7-δ and BaMO3 at the nanorod interface, and reduced the local strain around the nanorods, improving the elementary pinning force. As a result, the critical current density was improved in low temperature and low magnetic field when magnetic field was aligned with the c-axis. Thus, the combined effect of nanoinclusions and crystalline defects, in the present case, nanorods and stacking faults, can control the interface of nanoinclusion pinning centers, opening the interface design to realize the ideal pinning situation.

    DOI: 10.1088/1361-6668/abaebf

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  • Dual-Beam Irradiation Stability of Amorphous Silicon Oxycarbide at 300°C and 500°C Reviewed

    Su Q., Greaves G., Donnelly S.E., Mizuguchi S., Ishimaru M., Nastasi M.

    JOM   72 ( 11 )   4002 - 4007   2020.11

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    The irradiation stability of a material in the temperature range from 300°C to 500°C represents an important step for a variety of nuclear applications. Here we used dual-beam irradiation to investigate the response of an amorphous silicon oxycarbide (SiOC) to extreme environments (temperature and irradiation). The amorphous SiOC was prepared in thin film form by sputtering and then fabricated into cross-sectional transmission electron microscopy (TEM) specimens, and finally irradiated with helium (He) and krypton (Kr) ions inside a TEM. In-situ TEM observations revealed that He bubble and void formation are highly suppressed after irradiation up to 95 dpa with simultaneous He implantation up to 231 at.%. Atomic pair-distribution functions suggested that the amorphous structures are almost the same before and after irradiation, and no crystallization, nor phase separation was detected. This study demonstrates the stability of amorphous SiOC under dual-beam irradiation at nuclear reactor operation temperatures, suggesting that this material is applicable as a structural material for advanced nuclear reactors.

    DOI: 10.1007/s11837-020-04332-z

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  • Simultaneous achievement of high J <inf>c</inf>and suppressed J <inf>c</inf>anisotropy by hybrid pinning in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7</inf>three-phase-nanocomposite film Reviewed

    Horide T., Torigoe K., Ishimaru M., Kita R., Awaji S., Matsumoto K.

    Superconductor Science and Technology   33 ( 10 )   2020.10

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    Nanoscale pinning centers are introduced into YBa2Cu3O7 (YBCO) films and tapes to improve vortex pinning and critical current density (J c) for coated conductor application. While pinning with a single type of pinning center has been mainly investigated, hybrid pinning with multiple types of pinning center is expected to be more promising for simultaneously achieving high J c values and suppressing J c anisotropy. In the present study, a three-phase-nanocomposite film consisting of an YBCO matrix, BaHfO3 nanorods and Y-O nanoparticles was fabricated. A global pinning force maximum (F p,max, where F p = J c B) of 1.57 TN m-3 at 4.2 K, which is as high as the record level of F p,max, was achieved by the hybrid pinning of BaHfO3 nanorods and Y-O nanoparticles. Furthermore, the hybrid pinning improved the angular dependence of J c. The pinning contribution from nanoparticles increased with lowering temperature, which can explain the high J c at low temperature. Thus, the present study successfully demonstrates a highly effective structure that can simultaneously achieve suppressed J c anisotropy and a record level of J c.

    DOI: 10.1088/1361-6668/aba544

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  • Dual crystallization modes of sputter-deposited amorphous SiGe films Reviewed

    Okugawa M., Nakamura R., Numakura H., Ishimaru M., Yasuda H.

    Journal of Applied Physics   128 ( 1 )   2020.07

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    The crystallization behavior of sputter-deposited films of amorphous Si (a-Si) and SiGe alloys (a-SiGe) induced by electron irradiation at room temperature and by thermal annealing was investigated by in situ transmission electron microscopy. On electron irradiation at room temperature, extremely rapid crystallization, so-called explosive crystallization, occurred at a higher electron flux but not at a lower electron flux. On in situ thermal annealing, explosive crystallization occurred preferentially and partially at low temperatures in Ge-rich a-SixGe100-x for x < 50 but not for x > 50. These results indicate that the increase of Si content in a-SiGe prevents the occurrence of explosive crystallization. We previously proposed that explosive crystallization can occur in pristine a-Ge films via the interface of a liquid-like, high-density amorphous state at the growth front. An increase in the instability of this high-density amorphous state caused by the increase of Si in a-SiGe apparently gives rise to the suppression of explosive crystallization.

    DOI: 10.1063/5.0010202

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  • Effects of hydrogen on structure and crystallization behavior of sputter-deposited amorphous germanium films Reviewed

    Hanya Y., Nakamura R., Okugawa M., Ishimaru M., Oohata G., Yasuda H.

    Japanese Journal of Applied Physics   59 ( 7 )   2020.07

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    DOI: 10.35848/1347-4065/ab9cd9

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  • Liquid-mediated crystallization of amorphous GeSn under electron beam irradiation Reviewed

    Inenaga K., Motomura R., Ishimaru M., Nakamura R., Yasuda H.

    Journal of Applied Physics   127 ( 20 )   2020.01

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    Crystallization processes of amorphous germanium–tin (GeSn) under low-energy electron-beam irradiation were examined using transmission electron microscopy (TEM). Freestanding amorphous GeSn thin films were irradiated with a 100 keV electron beam at room temperature. The amorphous GeSn was athermally crystallized by electron-beam irradiation, when the electron flux exceeded the critical value. Heterogeneous structures consisting of nano- and micro-crystallites were formed after crystallization of amorphous GeSn with ∼24 at. % Sn in the as-sputtered amorphous state. In situ TEM observations of structural changes under electron-beam irradiation revealed that random nucleation and growth of nanocrystallites occur at the early stage of crystallization, followed by rapid formation of micro-grains surrounding the nanocrystals. It has been suggested that the growth of micro-grains progresses via supercooled liquid Sn at the amorphous/crystalline interface. The resultant GeSn grains with a size of a few micrometers contained ∼15 at. % Sn, much larger than the solubility limit of Sn in Ge (∼1 at. % Sn).

    DOI: 10.1063/5.0006416

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  • Deposition-temperature dependence of vortex pinning property in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7</inf>+BaHfO<inf>3</inf> films Reviewed

    Horide T., Torigoe K., Kita R., Nakamura R., Ishimaru M., Awaji S., Matsumoto K.

    Materials Transactions   61 ( 3 )   449 - 454   2020.01

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  • Carrier and heat transport properties of poly-crystalline GeSn films for thin-film transistor applications Reviewed

    Uchida N., Hattori J., Lieten R., Ohishi Y., Takase R., Ishimaru M., Fukuda K., Maeda T., Locquet J.

    Journal of Applied Physics   126 ( 14 )   2019.10

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    © 2019 Author(s). Thin-film transistors (TFTs) on insulator substrates are widely used in applications from liquid crystal displays to sensor devices. However, insulator substrates with low heat conductivity lead to unfavorable self-heating effects in the channel regions. Herein, the carrier and heat transport properties of polycrystalline GeSn films on SiO2/Si substrates were improved by suppressing Sn segregation in the films to fabricate GeSn channel TFTs. Alloying with 5.5% Sn enabled the formation of larger grains than those in poly-Ge films after low-temperature annealing (below 520 °C) without Sn segregation. In addition, the films had a hole mobility of 40 cm2 V-1 s-1 at a hole density of 1.1 × 1018 cm-3 and a thermal conductivity of 12.1 Wm-1 K-1 at room temperature. The temperature dependences of the carrier and heat transport properties of the poly-GeSn films were investigated to accurately simulate a device with a poly-GeSn channel TFT. This was achieved by using the carrier transport measurements and numerical simulations of the heat transport in the Debye model. The simulated device allowed an accurate assessment of the self-heating effects of the TFT and thus provides a design guide for TFTs.

    DOI: 10.1063/1.5085470

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  • Thermoelectric Property in Orthorhombic-Domained SnSe Film Reviewed

    11 ( 30 )   27057 - 27063   2019.07

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    DOI: 10.1021/acsami.9b04868

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  • Observation of inhomogeneous depinning in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7</inf> composite multilayers Reviewed

    32 ( 8 )   2019.06

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    DOI: 10.1088/1361-6668/ab1d2c

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  • Direct observations of crystallization processes of amorphous GeSn during thermal annealing: A temperature window for suppressing Sn segregation Reviewed

    125 ( 17 )   2019.05

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    DOI: 10.1063/1.5086480

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  • Compositional effects on radiation tolerance of amorphous silicon oxycarbide Reviewed

    518   241 - 246   2019.05

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    DOI: 10.1016/j.jnucmat.2019.03.012

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  • Nonlocal self-organization of long stacking faults from highly strained nanocomposite film of complex oxide Reviewed

    3 ( 1 )   2019.01

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    DOI: 10.1103/PhysRevMaterials.3.013403

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  • Introduction Reviewed

    Ishimaru Manabu

    KENBIKYO ( The Japanese Society of Microscopy )   54 ( 3 )   109 - 109   2019.01

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    DOI: 10.11410/kenbikyo.54.3_109

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  • Low-Energy Electron-Beam Induced Crystallization of Amorphous GeSn Reviewed

    Ishimaru Manabu, Nakamura Ryusuke

    KENBIKYO ( The Japanese Society of Microscopy )   54 ( 3 )   126 - 130   2019.01

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    <p>Energetic particles produce extensive defects in a target material, and finally structural changes are induced by damage accumulation. The damage processes under radiation environments are roughly classified into the "knock-on effects" and "electron excitation effects". The former and the latter become more prominent under electron beam irradiation with higher and lower acceleration voltage, respectively. These effects degrade the quality of structural analysis, and therefore they should be avoided during electron microscopy observations. On the other hand, radiation effects are useful to realize atomic configurations far from an equilibrium state, which is difficult to be realized by conventional heat treatments. In this article, we demonstrate the synthesis of polycrystalline GeSn using the recrystallization of amorphous by low-energy electron-beam irradiation.</p>

    DOI: 10.11410/kenbikyo.54.3_126

    CiNii Article

    Other Link: https://ci.nii.ac.jp/naid/130007783749

  • Preparation of Amorphous Fe-B Films by Sputtering and Their Structure Analysed by Transmission Electron Microscopy Reviewed

    Nakamura Ryusuke, Hanya Yuki, Ishimaru Manabu, Wada Takeshi

    Tetsu-to-Hagane ( The Iron and Steel Institute of Japan )   105 ( 10 )   1017 - 1021   2019.01

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    <p>Amorphous Fe-B thin films of the concentration range between 12 and 25 at.% B were prepared by radio frequency sputtering techniques, and their local structures were examined by transmission electron microscopy. Pair-distribution-function analyses of Fe-12, -18 and -25 at.%B for a region of 300 nm in diameter revealed a systematic trend according to the concentration; with the increase in B concentration, the intensity of the weak shoulder peak at 0.205 nm for the Fe-B pair increases whereas those of main peaks for Fe-Fe pair decrease. In electron diffraction patterns of the samples taken by a probe size of 2 nm, the specific spots of iron-borides, such as Fe<sub>3</sub>B and Fe<sub>23</sub>B<sub>6</sub>, were detected, suggesting the atomic arrangement of the compounds in the amorphous matrices.</p>

    DOI: 10.2355/tetsutohagane.TETSU-2019-032

    CiNii Article

    Other Link: https://ci.nii.ac.jp/naid/130007719957

  • Deposition-Temperature Dependence of Vortex Pinning Property in YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub>+BaHfO<sub>3</sub> Film Reviewed

    Horide Tomoya, Torigoe Kenta, Kita Ryusuke, Nakamura Ryota, Ishimaru Manabu, Awaji Satoshi, Matsumoto Kaname

    Journal of the Japan Institute of Metals and Materials ( The Japan Institute of Metals and Materials )   83 ( 9 )   320 - 326   2019.01

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    <p>Improvement of critical current density (<i>J</i><sub>c</sub>) in magnetic fields is required in YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub> films, and process parameters should be optimized for controlling pinning centers. In the present study, a deposition temperature was varied in pulsed laser deposition of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub>+BaHfO<sub>3</sub> films to control the nanorod structure, and its influence on <i>J</i><sub>c</sub> was analyzed. The YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub>+BaHfO<sub>3</sub> film deposited at 850℃ exhibited pinning force maximum (<i>F</i><sub>p,max</sub>) as high as 413 GN/m<sup>3</sup> at 40 K, while the <i>F</i><sub>p,max</sub> for the deposition temperature of 850℃ at 77 K was smaller than that in the YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub>+BaHfO<sub>3</sub> film deposited at 900℃. A critical temperature decreased and matching field increased with decreasing the deposition temperature. Increase in deposition temperature is effective in improving the <i>F</i><sub>p,max</sub> in high temperatures, since the critical temperature and matching field dependences of <i>J</i><sub>c</sub> value dominate the <i>F</i><sub>p,max</sub>. On the other hand, low deposition temperature improves the <i>F</i><sub>p,max</sub> in low temperatures since the <i>F</i><sub>p</sub> shift in accordance with matching field is dominant to the <i>F</i><sub>p,max</sub>. Thus, the deposition temperature should be set in pulsed laser deposition of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub> films containing nanorods considering the <i>J</i><sub>c</sub> variation with critical temperature and matching field.</p>

    DOI: 10.2320/jinstmet.JA201902

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  • Application of the Tersoff interatomic potential to pressure-induced polyamorphism of silicon Reviewed International journal

    Mukuno R., Ishimaru M.

    Japanese Journal of Applied Physics   58 ( 10 )   2019.01

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    DOI: 10.7567/1347-4065/ab42f3

    Kyutacar

    Scopus

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  • Chalcopyrite ZnSnSb<inf>2</inf>: A Promising Thermoelectric Material Reviewed

    10 ( 50 )   43682 - 43690   2018.12

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1021/acsami.8b16717

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  • Structure of crystallized particles in sputterdeposited amorphous germanium films Reviewed

    51 ( 5 )   1467 - 1473   2018.10

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1107/S1600576718012153

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  • Molecular-dynamics simulations of solid phase epitaxy in silicon: Effects of system size, simulation time, and ensemble Reviewed

    57 ( 9 )   2018.09

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    DOI: 10.7567/JJAP.57.095503

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  • Geometric and compositional factors on critical current density in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7-δ</inf>films containing nanorods Reviewed

    31 ( 6 )   2018.05

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1088/1361-6668/aabe68

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  • 第12回ミクロ・ナノ解析に関する日本・ポーランド合同セミナー開催報告 Reviewed

    石丸 学

    まてりあ ( 公益社団法人 日本金属学会 )   57 ( 12 )   631 - 631   2018.01

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)

    DOI: 10.2320/materia.57.631

    CiNii Article

    Other Link: https://ci.nii.ac.jp/naid/130007538928

  • Proton-Driven Intercalation and Ion Substitution Utilizing Solid-State Electrochemical Reaction Reviewed

    139 ( 49 )   17987 - 17993   2017.12

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1021/jacs.7b09328

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  • Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide Reviewed

    7 ( 1 )   2017.12

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1038/s41598-017-04247-x

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  • Formation of metastable phases in Zr-ion-irradiated Al<inf>2</inf>O<inf>3</inf>upon thermal annealing Reviewed

    66 ( 6 )   388 - 396   2017.12

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1093/jmicro/dfx028

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  • Low-temperature synthesis of crystalline GeSn with high Sn concentration by electron excitation effect Reviewed

    56 ( 10 )   2017.10

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  • Inhomogeneous crystallization of sputter-deposited amorphous Ge films Reviewed

    276 - 278   2017.08

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    Language:English   Publishing type:Research paper (international conference proceedings)

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  • Strong c-axis correlated pinning and hybrid pinning in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7-δ</inf> films containing BaHfO<inf>3</inf> nanorods and stacking faults Reviewed

    30 ( 7 )   2017.06

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1088/1361-6668/aa70d3

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  • Pin potential effect on vortex pinning in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7-δ</inf> films containing nanorods: Pin size effect and mixed pinning Reviewed

    110 ( 5 )   2017.01

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1063/1.4975300

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  • Molecular dynamics study on structural relaxation processes in amorphous germanium Reviewed

    58 ( 6 )   857 - 861   2017.01

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  • Molecular Dynamics Study on Structural Relaxation Processes in Amorphous Germanium Reviewed

    Imabayashi Shigetaka, Ishimaru Manabu

    Journal of the Japan Institute of Metals   81 ( 2 )   66 - 70   2017.01

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    Language:Japanese   Publishing type:Research paper (scientific journal)

    DOI: 10.2320/jinstmet.J2016051

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  • Transmission Electron Microscopy Studies on Radiation-Induced Structural Changes Invited Reviewed

    Ishimaru Manabu

    KENBIKYO ( The Japanese Society of Microscopy )   52 ( 1 )   24 - 28   2017.01

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    <p>Irradiation techniques using ion-, electron-, and laser-beams can realize atomic configurations far from the equilibrium state, the so-called metastable phases, which are difficult to be obtained by conventional material synthesis techniques. The physical properties of materials strongly depend on atomic arrangements, and therefore knowledge of atomistic structures is required to synthesize new structural and functional materials. In addition, understanding structural changes of matter under radiation environments is of technological importance to predict performance and lifetimes of materials and to avoid serious accident. We have examined radiation-induced structural changes of various materials using transmission electron microscopy. In this article, we report our resent studies on (1) thermally-induced corundum-to-spinel phase transformation in Zr ion irradiated Al<sub>2</sub>O<sub>3</sub> and (2) the enhancement of radiation tolerance in nanostructured SiC.</p>

    DOI: 10.11410/kenbikyo.52.1_24

    CiNii Article

    Other Link: https://ci.nii.ac.jp/naid/130007689241

  • Behavior of Sn atoms in GeSn thin films during thermal annealing: Ex-situ and in-situ observations Reviewed

    120   245304(1) - 245304(9)   2016.12

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    DOI: 10.1063/1.4973121

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  • Thermal crystallization of sputter-deposited amorphous Ge films: Competition of diamond cubic and hexagonal phases Reviewed

    6   125035(1) - 125035(9)   2016.12

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    DOI: 10.1063/1.4972282

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  • Crystallization of sputter-deposited amorphous Ge films by electron irradiation: Effect of low-flux pre-irradiation Reviewed

    120   134308(1) - 134308(7)   2016.10

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    DOI: 10.1063/1.4964332

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  • Discovery of Pt based superconductor LaPt5As Reviewed

    138   9927 - 9934   2016.07

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    DOI: 10.1021/jacs.6b04976

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  • Role of nanoscale precipitates for enhancement of thermoelectric properties of heavily P-doped Si-Ge alloys Reviewed

    57   1070 - 1075   2016.06

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.2320/matertrans.E-M2016805

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    CiNii Article

  • Amorphization resistance of nano-engineered SiC under heavy ion irradiation Reviewed

    478   310 - 314   2016.06

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    DOI: 10.1016/j.jnucmat.2016.06.031

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  • Structural transition in sputter-deposited amorphous germanium films by aging at ambient temperature Reviewed

    119   214309(1) - 214309(7)   2016.05

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1063/1.4953234

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  • Influence of matching field on critical current density and irreversibility temperature in YBa2Cu3O7 films with BaMO3 (M=Zr, Sn, Hf) nanorods Reviewed

    108   082601(1) - 082601(5)   2016.01

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1063/1.4942463

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  • Carrier and heat transport properties of polycrystalline GeSn films on SiO2 Reviewed

    2015.12

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    DOI: 10.1063/1.4937386

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  • Corundum-to-spinel structural phase transformation in alumina Reviewed

    2015.01

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    DOI: 10.1016/j.nimb.2015.06.005

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  • Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance Reviewed

    2015.01

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    DOI: 10.1016/j.jnucmat.2015.06.036

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  • Ultraviolet Raman spectra of few nanometer thick silicon-on-insulator nanofilms: Lifetime reduction of confined phonons

    105   153112(1) - 153112(4)   2014.10

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    DOI: 10.1063/1.4898672

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  • Bottom-up nanostructured bulk silicon: A practical high-efficiency thermoelectric material Reviewed

    6   13921 - 13927   2014.10

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    DOI: 10.1039/c4nr04470c

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  • Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5 Reviewed

    116   033504(1) - 033504(8)   2014.07

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    DOI: 10.1063/1.4889800

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  • Competing effects of electronic and nuclear energy loss on microstructural evolution in ionic-covalent materials Invited Reviewed

    327   33 - 43   2014.04

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1016/j.nimb.2013.10.095

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  • Stability of amorphous Ta-O nanotubes prepared by anodization: Thermal and structural analyses Reviewed

    29   753 - 760   2014.04

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    DOI: 10.1557/jmr.2014.44

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  • Ion beam induced epitaxial crystallization of α-Al2O3 at room temperature Reviewed

    321   8 - 13   2014.03

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    DOI: 10.1016/j.nimb.2013.12.012

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  • Thermoelectric properties of Au nanoparticle-supported Sb1.6Bi0.4Te3 synthesized by a γ-ray irradiation method Reviewed

    251   162 - 167   2014.01

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    DOI: 10.1002/pssb.201349226

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  • Ion tracks and microstructures in barium titanate irradiated with swift heavy ions: A combined experimental and computational study Reviewed

    61   7904 - 7916   2013.12

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    DOI: 10.1016/j.actamat.2013.09.029

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  • Structure analysis of composition modulation in epitaxially-grown III-V semiconductor alloys Reviewed

    52   110120(1) - 110120(6)   2013.11

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    DOI: 10.7567/JJAP.52.110120

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  • Formation of highly oriented nanopores via crystallization of amorphous Nb2O5 and Ta2O5 Reviewed

    114   124308(1) - 124308(6)   2013.09

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    DOI: 10.1063/1.4822300

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  • Report on the 69^<th> Annual Meeting of the Japanese Society of Microscopy Reviewed

    TAKEDA Seji, ISHIMARU Manabu

    48 ( 2 )   142 - 144   2013.08

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    CiNii Article

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  • Growth parameter dependence of structural, electrical and magnetic properties in GaGdN layers grown on GaN(0001) Reviewed

    378   314 - 318   2013.07

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    DOI: 10.1016/j.jcrysgro.2012.12.106

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  • Origin of radiation tolerance of 3C-SiC with nanolayered planar defects Reviewed

    103   033104(1) - 033104(4)   2013.07

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    DOI: 10.1063/1.4813593

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  • Atomic rearrangements in amorphous Al2O3 under electron-beam irradiation Reviewed

    113   064312(1) - 064312(7)   2013.02

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    DOI: 10.1063/1.4790705

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  • Surface and cross sectional nano-structure of prototype BPM prepared using imprinted glassy alloy thin film Reviewed

    30   48 - 50   2012.11

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    DOI: 10.1016/j.intermet.2012.03.041

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  • Novel soft-magnetic underlayer of a bit-patterned media using CoFe-based amorphous alloy thin film Reviewed

    30   100 - 103   2012.11

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    DOI: 10.1016/j.intermet.2012.03.025

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  • Direct imaging of atomic clusters in an amorphous matrix: a Co-C granular thin film Reviewed

    101   191902(1) - 191902(4)   2012.11

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    DOI: 10.1063/1.4765362

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  • Coherent growth of GaGdN layers with high Gd concentration on GaN(0001) Reviewed

    101   221902(1) - 221902(4)   2012.11

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    DOI: 10.1063/1.4767992

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  • Strong atomic ordering in Gd-doped GaN Reviewed

    101   101912(1) - 101912(4)   2012.09

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    DOI: 10.1063/1.4751245

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  • Enhancement of thermoelectric properties of CoSb3-based skutterudites by double filling of Tl and In Reviewed

    112   043509(1) - 043509(6)   2012.08

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    DOI: 10.1063/1.4748340

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  • Nanoscale engineering of radiation tolerant silicon carbide Reviewed

    14   13429 - 13436   2012.08

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    DOI: 10.1039/c2cp42342a

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  • Effect of the amount of vacancies on the thermoelectric properties of Cu-Ga-Te ternary compounds Reviewed

    53   1212 - 1215   2012.07

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    DOI: 10.2320/matertrans.E-M2012810

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  • Fabrication of nickel/organic-molecules/nickel nanoscale junctions utilizing thin-film edges and their structural and electrical properties Reviewed

    51   065202(1) - 065202(8)   2012.06

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    DOI: 10.1143/JJAP.51.065202

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  • Read/write characteristics of a new type of bit-patterned-media using nano-patterned glassy alloy Reviewed

    324   1444 - 1448   2012.04

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    DOI: 10.1016/j.jmmm.2011.12.009

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  • Electron diffraction study on chemical short-range order in covalent amorphous solids Invited Reviewed

    277   70 - 76   2012.04

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    DOI: 10.1016/j.nimb.2011.12.054

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  • High-temperature thermoelectric properties of Cu2In4Te7 Reviewed

    6   154 - 156   2012.04

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    DOI: 10.1002/pssr.201206058

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  • Growth of higher manganese silicides from amorphous manganese-silicon layers synthesized by ion implantation Reviewed

    272   446 - 449   2012.02

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    DOI: 10.1016/j.nimb.2011.01.120

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  • Self-elongated growth of nanopores in annealed amorphous Ta2O5 films Reviewed

    66   182 - 185   2012.02

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    DOI: 10.1016/j.scriptamat.2011.10.033

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  • Superlattice-like stacking fault array in ion-irradiated GaN Reviewed

    92   49 - 55   2012.01

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    DOI: 10.1080/09500839.2011.630686

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  • Enhancement of nanovoid formation in annealed amorphous Al2O3 including W Reviewed

    110   064324(1) - 064324(7)   2011.09

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    DOI: 10.1063/1.3639290

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  • Structural characterization of MBE grown InGaGdN/GaN and InGaN/GaGdN structures Reviewed

    8   2245 - 2247   2011.08

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    DOI: 10.1002/pssc.201001024

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  • Nanovoid formation by change in amorphous structure through the annealing of amorphous Al2O3 thin films Reviewed

    59   4631 - 4640   2011.06

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    DOI: 10.1016/j.actamat.2011.04.008

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  • Transmission-electron diffraction by MeV electron pulses Reviewed

    98   251903(1) - 251903(3)   2011.06

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    DOI: 10.1063/1.3602314

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  • Effect of vacancy distribution on the thermal conductivity of Ga2Te3 and Ga2Se3 Reviewed

    40   999 - 1004   2011.05

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    DOI: 10.1007/s11664-010-1479-7

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  • High-temperature thermoelectric properties of Cu2Ga4Te7 with defect zinc-blende structure Reviewed

    98   172104(1) - 172104(3)   2011.04

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    DOI: 10.1063/1.3583662

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  • Experimental evidence of homonuclear bonds in amorphous GaN Reviewed

    109   043512(1) - 043512(4)   2011.02

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    DOI: 10.1063/1.3552987

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  • Influence of Si-doping on the characteristics of InGaGdN/GaN MQWs grown by MBE Reviewed

    8   491 - 493   2011.02

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    DOI: 10.1002/pssc.201000484

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  • Investigations on the properties of intermittently Gd-doped InGaN structures grown by molecular-beam epitaxy Reviewed

    8   497 - 499   2011.02

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    DOI: 10.1002/pssc.201000440

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  • Nanovoid formation through the annealing of amorphous Al2O3 and WO3 films Reviewed

    64   197 - 200   2011.01

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    DOI: 10.1016/j.scriptamat.2010.09.043

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  • X-ray photoelectron spectroscopy analysis of TlInGaAsN semiconductor system and their annealing induced structural changes

    108   123524(1) - 123524(4)   2010.12

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    DOI: 10.1063/1.3525979

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  • Direct observations of Ge2Sb2Te5 recording marks in the phase-change disk

    107   103507(1) - 103507(5)   2010.05

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    DOI: 10.1063/1.3373419

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  • Radiation-induced metastable ordered phase in gallium nitride

    96   191908(1) - 191908(3)   2010.05

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    DOI: 10.1063/1.3430046

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  • Damage and microstructure evolution in GaN under Au ion irradiation

    43   085303(1) - 085303(9)   2010.03

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    DOI: 10.1088/0022-3727/43/8/085303

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  • Fabrication of Ni quantum cross devices with a 17 nm junction and their current-voltage characteristics

    21   015301(1) - 015301(6)   2010.01

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  • Electron microscopy study of L1(0)-FePtCu nanoparticles synthesized at 613K

    236   94 - 99   2009.11

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  • Formation process of β-FeSi2 from amorphous Fe-Si synthesized by ion implantation: Fe concentration dependence

    236   123 - 127   2009.11

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  • Effect of periodicity of the two-dimensional vacancy planes on the thermal conductivity of bulk Ga2Te3

    3   221 - 223   2009.10

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  • Specific surface effect on transport properties of NiO/MgO heterostructured nanowires

    95   133110(1) - 133110(3)   2009.09

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  • Influence of native silicon oxides on the growth of GaN nanorods on Si(001)

    6   S570 - S573   2009.09

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  • Ion-beam-induced chemical disorder in GaN

    106   053513(1) - 053513(4)   2009.09

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  • Thermoelectric characterization of (Ga,In)2Te3 with self-assembled two-dimensional vacancy planes

    38   1392 - 1396   2009.07

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  • Damage profile and ion distribution of slow heavy ions in compounds

    105   104901(1) - 104901(12)   2009.05

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  • MBE growth and characterization of TlInGaAsN double quantum well structures

    311   1733 - 1738   2009.05

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  • Transmission electron microscopy study of an electron-beam-induced phase transformation of niobium nitride

    60   799 - 802   2009.05

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  • Early stage of the crystallization in amorphous Fe-Si layer: Formation and growth of metastable α-FeSi2

    267   1290 - 1293   2009.05

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  • Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures

    94   153103(1) - 153103(3)   2009.04

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  • Ni thin films vacuum-evaporated on polyethylene naphthalate substrates with and without the application of magnetic field

    225   3706 - 3712   2009.01

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  • Electron irradiation-induced phase transformation in α-FeSi2

    104   073524(1) - 073524(6)   2008.10

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  • Direct observations of thermally induced structural changes in amorphous silicon carbide

    104   033503(1) - 033503(5)   2008.08

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  • Unexpectedly low thermal conductivity in natural nanostructured bulk Ga2Te3

    93   012101(1) - 012101(3)   2008.07

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  • Temperature dependence of electron-beam induced effects in amorphous apatite

    266   3037 - 3042   2008.06

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  • Compositional analyses of ion-irradiation-induced phases in δ-Sc4Zr3O12

    266   2892 - 2897   2008.06

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  • Low temperature thermal annealing-induced α-FeSi2 derived phase in an amorphous Si matrix

    91   353 - 356   2008.05

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  • Role of the triclinic Al2Fe structure in the formation of the Al5Fe2-approximant

    88   491 - 500   2008.04

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  • Ionization-induced effects in amorphous apatite at elevated temperatures

    23   962 - 967   2008.04

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  • Formation processes of iron silicide nanoparticles studied by ex situ and in situ transmission electron microscopy

    102   103512(1) - 103512(7)   2007.11

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  • Ion-beam-induced phase transformations in δ-Sc4Zr3O12

    102   063532(1) - 063532(7)   2007.09

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  • Formation process of sharp-pointed structures on GaN nanorods during RF-MBE growth and their field emission characteristics

    4   2371 - 2374   2007.08

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  • Surface sputtering in high-dose Fe ion implanted Si

    258   490 - 492   2007.05

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  • Post-annealing recrystallization and damage recovery process in Fe ion implanted Si

    257   340 - 343   2007.04

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  • Exchange interactions in hydrogen-induced amorphous YFe2

    353   748 - 752   2007.04

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  • Effect of ionization rates on dynamic recovery processes during electron-beam irradiation of 6H-SiC

    90   121910(1) - 121910(3)   2007.03

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  • Radiation-induced amorphization resistance and radiation tolerance in structurally related oxides

    6   217 - 223   2007.03

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  • Synthesis of iron silicides by electron-beam evaporation: Effects of substrate pre-baking temperature and Fe deposition thickness

    46   732 - 737   2007.02

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  • Annealing effect on structural defects in low-dose separation-by-implanted-oxygen wafers

    45   7592 - 7599   2006.10

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  • Structural changes of SiC under electron-beam irradiation: Temperature dependence

    250   315 - 319   2006.09

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  • Structural characterization of amorphous Fe-Si and its recrystallized layers

    250   283 - 286   2006.09

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  • Structural evolution in Fe ion implanted Si upon thermal annealing

    250   300 - 302   2006.09

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  • Electron-beam radial distribution analysis of ion-beam-induced amorphous SiC

    250   309 - 314   2006.09

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  • Transmission electron microscopy study on FeSi2 nanoparticles synthesized by electron-beam evaporation

    100   014307(1) - 014307(6)   2006.07

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  • Solid phase crystallization of amorphous Fe-Si layers synthesized by ion implantation

    88   51904(1) - 51904(3)   2006.06

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  • Formation process of β-FeSi2/Si heterostructure in high-dose Fe ion implanted Si

    99   113527(1) - 113527(7)   2006.06

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  • Structural investigation of Ge-Sb-Sn thin film using transmission electron microscopy

    41   2615 - 2619   2006.05

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  • Structural characterization of iron silicides nanoparticles grown on Si substrate: Annealing rate dependence

    41   2611 - 2614   2006.05

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Lectures

  • Transmission electron microscopy study on crystallization processes of amorphous GeSn

    International Workshop on Advanced Materials and Device Technology  2017.11 

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    Event date: 2017.11.22 - 2017.11.24   Language:English   Presentation type:Keynote lecture  

  • Crystallization processes of amorphous GeSn on thermal annealing

    11th Polish-Japanese Joint Seminar on Micro and Nano Analysis  2016.09 

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    Event date: 2016.09.11 - 2016.09.15   Language:English   Presentation type:Special lecture  

  • Radial distribution function analysis of ion-beam-irradiated covalent materials

    47th Annual Meeting of Korean Society of Microscopy “Session: Special International Symposium on Microscopy and Microanalysis of Materials”  2015.11 

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    Event date: 2015.11.12 - 2015.11.13   Language:English   Presentation type:Special lecture  

  • Structural changes of nanostructured SiC under radiation environments

    Materials Research Society 2014 Fall Meeting  2014.11 

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    Event date: 2014.11.30 - 2014.12.05   Language:English   Presentation type:Special lecture  

  • Radiation-induced amorphization resistance of nanostructured SiC

    10th Japanese-Polish Joint Seminar on Micro and Nano Analysis  2014.10 

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    Event date: 2014.10.24 - 2014.10.26   Language:English   Presentation type:Special lecture   Venue:Sapporo, Japan  

  • Electron diffraction study on radiation-induced chemical disorder in covalent materials

    9th Polish-Japanese Joint Seminar on Micro and Nano Analysis  2012.09 

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    Event date: 2012.09.11 - 2012.09.13   Language:English   Presentation type:Special lecture   Venue:Sieniawa, Poland  

  • Transmission electron microscopy study on radiation-induced structures in GaN

    2012 International Conference on Defects in Insulating Materials  2012.06 

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    Event date: 2012.06.24 - 2012.06.29   Language:English   Presentation type:Special lecture   Venue:Santa Fe, New Mexico, USA  

  • Electron diffraction study on radiation-induced amorphous structures

    International Workshop on Ion Beam Applications of Functional Materials  2011.08 

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    Event date: 2011.08.19 - 2011.08.22   Language:English   Presentation type:Special lecture   Venue:Jinan, Shandong, China  

  • Chemical short-range order in amorphous semiconductors

    European Materials Research Society 2011 Spring Meeting  2011.05 

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    Event date: 2011.05.09 - 2011.05.13   Language:English   Presentation type:Special lecture   Venue:Nice, France  

  • Radiation-induced amorphous structures in covalent materials

    Materials Research Society 2010 Fall Meeting  2010.11 

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    Event date: 2010.11.29 - 2010.12.03   Language:English   Presentation type:Special lecture   Venue:Boston, Massachusetts, USA  

  • Nanoscale phase separation in epitaxially-grown III-V alloys

    8th Japanese-Polish Joint Seminar on Micro and Nano Analysis  2010.09 

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    Event date: 2010.09.05 - 2010.09.08   Language:English   Presentation type:Special lecture   Venue:Uji, Kyoto  

  • Transmission electron microscopy study on radiation-induced structures in GaN

    21st International Conference on the Application of Accelerators in Research and Industry  2010.08 

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    Event date: 2010.08.08 - 2010.08.13   Language:English   Presentation type:Special lecture   Venue:, Fort Worth, Texas, USA  

  • Structural changes of amorphous SiC during post-implantation thermal annealing

    16th International Conference on Ion Beam Modification of Materials  2008.08 

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    Event date: 2008.08.31 - 2008.09.05   Language:English   Presentation type:Special lecture   Venue:Dresden, Germany  

  • Ion beam synthesis of environmental-friendly iron silicides

    3rd Chungnam National University - SANKEN Joint Symposium on Advanced Materials Science  2008.02 

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    Event date: 2008.02.27 - 2008.02.28   Language:English   Presentation type:Special lecture   Venue:Daejeon, Korea  

  • Structural characterization of ion-beam-induced amorphous silicon carbide by advanced electron microscopy

    15th International Conference on Surface Modification of Materials by Ion Beams  2007.09 

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    Event date: 2007.09.30 - 2007.10.05   Language:English   Presentation type:Special lecture   Venue:Mumbai, India  

  • Amorphization of SiC under radiation environments

    Satellite Conference on Materials Behaviour: Far From Equilibrium  2006.12 

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    Event date: 2006.12.15 - 2006.12.16   Language:English   Presentation type:Keynote lecture   Venue:Mumbai, India  

  • Formation process of β-FeSi2/Si heterostructure in high-dose Fe ion implanted Si

    19th International Conference on the Application of Accelerators in Research and Industry  2006.08 

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    Event date: 2006.08.20 - 2006.08.25   Language:English   Presentation type:Special lecture   Venue:Fort Worth, Texas, USA  

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Honors and Awards

  • 公益社団法人日本顕微鏡学会第61回学会賞(瀬藤賞)(応用研究(非生物)部門)

    公益社団法人日本顕微鏡学会   2016.06

    石丸 学

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    Country:Japan

  • 社団法人応用物理学会第6回JJAP(応用物理学会英文誌)編集貢献賞

    社団法人応用物理学会   2008.04.11

    石丸 学

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    Country:Japan

  • 社団法人日本金属学会第66回功績賞(物性部門)

    社団法人日本金属学会   2008.03.26

    石丸 学

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    Country:Japan

  • 2007 MRS Fall Meeting Best Poster Award

    Materials Research Society   2007.11.26

    J. H. Won, A. Kovács, M. Ishimaru, Y. Hirotsu

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    Country:Japan

  • 財団法人本多記念会第27回本多記念研究奨励賞

    財団法人本多記念会   2006.05.12

    石丸 学

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    Country:Japan

  • 社団法人日本金属学会第56回金属組織写真賞A部門奨励賞

    社団法人日本金属学会   2006.03.21

    内藤宗幸,石丸 学,弘津禎彦,高島正樹

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    Country:Japan

  • 社団法人日本顕微鏡学会第6回奨励賞(物質系応用研究部門)

    社団法人日本顕微鏡学会   2005.06.02

    石丸 学

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    Country:Japan

  • Excellent Poster Award at International Conference on New Frontiers of Process Science and Engineering in Advanced Materials

    High Temperature Society of Japan   2004.11.26

    J. H. Won, K. Sato, M. Ishimaru, Y. Hirotsu

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    Country:Japan

  • 社団法人日本金属学会第6回奨励賞(物性部門)

    社団法人日本金属学会   1996.09.28

    石丸 学

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Grants-in-Aid for Scientific Research

  • 高レベル放射性廃棄物の処理用コンテナ材料の開発研究

    Grant number:25289249  2013.04 - 2016.03   基盤研究(B)

  • 自発的ナノスケール相分離とそれを利用した低次元ナノ構造体の創製

    Grant number:22560696  2010.04 - 2013.03   基盤研究(C)

  • 照射環境下における炭化ケイ素の非晶質化過程と化学的短範囲規則性

    Grant number:19560664  2007.04 - 2009.03   基盤研究(C)

  • 相変化型光メモリー材料における記録層の非晶質局所構造と結晶化速度の関係

    Grant number:16560008  2004.04 - 2006.03   基盤研究(C)

Social activity outside the university

  • 電子で見る原子の世界-電子顕微鏡による材料の診断-

    2014.11.04

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    Audience: High school students

    Type:Visiting lecture

    福岡県立北筑高等学校