2022/05/25 更新

イシマル マナブ
石丸 学
ISHIMARU Manabu
Scopus 論文情報  
総論文数: 0  総Citation: 0  h-index: 17

Citation Countは当該年に発表した論文の被引用数

所属
大学院工学研究院 物質工学研究系
職名
教授
研究室住所
福岡県北九州市戸畑区仙水町1-1
外部リンク

研究キーワード

  • 量子ビーム技術

  • 透過電子顕微鏡

  • 構造解析

出身学校

  • 1989年03月   東京工業大学   理工学部   卒業   日本国

出身大学院

  • 1994年03月   九州大学   総合理工学研究科   材料開発工学専攻   博士課程・博士後期課程   修了   日本国

  • 1991年03月   東京工業大学   理工学研究科   金属工学専攻   修士課程・博士前期課程   修了   日本国

取得学位

  • 九州大学  -  博士(工学)   1994年03月

学内職務経歴

  • 2013年04月 - 現在   九州工業大学   大学院工学研究院   物質工学研究系     教授

  • 2016年04月 - 2018年03月   九州工業大学   機器分析センター     センター長

学外略歴

  • 2007年04月 - 2013年03月   大阪大学   産業科学研究所   准教授   日本国

  • 2000年05月 - 2007年03月   大阪大学   産業科学研究所   助教授   日本国

  • 1998年07月 - 1999年07月   米国ロスアラモス国立研究所   客員研究員   アメリカ合衆国

  • 1994年04月 - 2000年04月   九州大学   工学部   助手   日本国

所属学会・委員会

  • 2002年04月 - 現在   日本顕微鏡学会   日本国

  • 2000年04月 - 2002年03月   日本電子顕微鏡学会   日本国

  • 1994年09月 - 現在   応用物理学会   日本国

  • 1990年09月 - 現在   日本金属学会   日本国

論文

  • Review of “12th Japanese-Polish joint seminar on micro and nano analysis (August 29-September 1, 2018)” 査読有り

    Ishimaru M.

    Materials Transactions ( 公益社団法人 日本金属学会 )   62 ( 9 )   1420 - 1423   2021年09月

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    担当区分:筆頭著者, 責任著者   記述言語:英語   掲載種別:記事・総説・解説・論説等(学術雑誌)

    “The 12th Japanese-Polish Joint Seminar on Micro and Nano Analysis” was held in Fukuoka, Japan from August 29 to September 1, 2018, and the proceedings were published in May, 2019, as a special issue of Materials Transactions (Vol. 60, No. 5). The main purpose of this seminar is to discuss the structural analysis of materials by electron microscopy techniques. Among the papers presented at the seminar, this article briefly reviews the following topics: observations of dislocations in a thick specimen by ultra-high voltage electron microscopy, suppression of geometric phase shift due to antiphase boundaries in dark-field electron holography, and structural characterization of amorphous materials by electron diffraction techniques.

    DOI: 10.2320/matertrans.MT-M2021094

    Scopus

    CiNii Research

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  • Explosive crystallization of sputter-deposited amorphous germanium films by irradiation with an electron beam of SEM-level energies 査読有り

    Nakamura R., Matsumoto A., Ishimaru M.

    Journal of Applied Physics   129 ( 21 )   2021年06月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    The crystallization of sputter-deposited substrate-free films of amorphous germanium was induced by electron irradiation at SEM-level energies of less than 20 keV at ambient temperature using an electron probe microanalyzer. Instantaneous crystallization, referred to as explosive crystallization, occurred consistently at 2-20 keV; the threshold of electron fluxes is 1015-1016 m−2 s−1, which is five to six orders of magnitude lower than those at 100 keV reported previously. This process is expected to be advantageous in the production of polycrystalline Ge films since it is rapid, requires little energy, and results in negligible damage to the substrate.

    DOI: 10.1063/5.0052142

    Kyutacar

    Scopus

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  • Nanostructures and flux pinning properties in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7- y </inf>thin films with double perovskite Ba<inf>2</inf>LuNbO<inf>6</inf>nanorods 査読有り

    Gondo M., Yoshida M., Yoshida Y., Ishimaru M., Horide T., Matsumoto K., Kita R.

    Journal of Applied Physics   129 ( 19 )   2021年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    Double perovskite Ba2LuNbO6 (BLNO)-doped YBa2Cu3O7-y (YBCO) thin films are fabricated on a SrTiO3 (001) substrate by pulsed laser deposition, and their nanostructures are characterized by transmission electron microscopy and scanning transmission electron microscopy. Cross-sectional observations and elemental mapping reveal that BLNO self-assembles during thin film deposition, and consequently, nanorods extending straight from the substrate to the surface are formed in the YBCO thin films. It is confirmed that stacking faults perpendicular to the growth direction disturb the formation of BLNO nanorods. Strain maps extracted by geometric phase analysis reveal that the tensile strain occurs in the YBCO matrix around the BLNO nanorods. Misfit dislocations are periodically introduced at the interface between the nanorod and the matrix, which results in the inhomogeneous strain of YBCO around the BLNO nanorods. The superconducting properties of the YBCO + BLNO thin films are compared with those of other previously reported YBCO thin films with normal perovskite and double perovskite nanorods.

    DOI: 10.1063/5.0048693

    Kyutacar

    Scopus

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  • Enhancement of Thermoelectric Properties of n-Type Bi<inf>2</inf>Te<inf>3- x</inf>Se<inf>x</inf>by Energy Filtering Effect 査読有り

    Kawajiri Y., Tanusilp S.A., Kumagai M., Ishimaru M., Ohishi Y., Tanaka J., Kurosaki K.

    ACS Applied Energy Materials   2021年01月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    A pair of n-type Bi2Te3-xSex and p-type (Bi,Sb)2Te3 is known as a promising candidate for assembling a high thermoelectric efficiency module operating at near room temperature. While the dimensionless figure of merit (zT) of p-type (Bi,Sb)2Te3 is commonly larger than 1.0, n-type Bi2Te3-xSex has a lower zT value of μ0.8 at room temperature. Here, we aim to enhance the zT of n-type Bi2Te3-xSex through the energy filtering effect that can improve the Seebeck coefficient by adding Au. In the Bi2Te2.8Se0.2 + 5 at % Au composite, the Seebeck coefficient is significantly improved, and the electrical resistivity does not change significantly, leading to an approximately twice as high power factor as that of the non-Au-added one at near room temperature. Also, the addition of Au suppresses the thermal conductivity. These advantages result in a maximum zT of over 1.0 at room temperature and average zT value of 1.05 at T = 300-400 K, an μ75% improvement, which is comparable to those of the reported n-type Bi2Te3-based materials. Also, Au addition shows no negative effect on the mechanical properties as well as high-temperature stability of Bi2Te3-xSex. These results indicate that Au addition is a promising method to improve the thermoelectric properties of n-type Bi2Te3-xSex used for assembling a practical thermoelectric module operating at near room temperature.

    DOI: 10.1021/acsaem.1c02560

    Scopus

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  • アモルファスGeSnの結晶化におけるSnの振る舞い 招待有り 査読有り

    石丸 学, 仲村龍介

    まてりあ   59 ( 12 )   662 - 668   2020年12月

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    担当区分:筆頭著者   記述言語:日本語   掲載種別:記事・総説・解説・論説等(学術雑誌)

    DOI: 10.2320/materia.59.662

  • Combined effect of nanorod and stacking fault for improving nanorod interface in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7-δ</inf>nanocomposite films 査読有り

    Horide T., Ishimaru M., Sato K., Matsumoto K.

    Superconductor Science and Technology   33 ( 11 )   2020年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    Self-organized nanorods in YBa2Cu3O7-δ films are important pinning centers from the technical and fundamental views. While influence of nanoscale factors (>4-5 nm) on the vortex pinning has already been discussed in detail, the interface control of nanorods (at the smaller scale) has not yet been performed. Here, it is demonstrated that the stacking faults can control the nanorod interface to improve the vortex pinning. The stacking faults were formed across the nanorods by post-annealing the YBa2Cu3O7-δ films containing BaMO3 (M = Zr, Sn, Hf) nanorods. The strong bonding between YBa2Cu3O7-δ and BaMO3 varies the atomic position of YBa2Cu3O7-δ, degrading an interface sharpness and an elementary pinning force of the nanorod. Scanning transmission electron microscopy and density functional theory calculation clarified that the stacking faults broke the strong bonding between YBa2Cu3O7-δ and BaMO3 at the nanorod interface, and reduced the local strain around the nanorods, improving the elementary pinning force. As a result, the critical current density was improved in low temperature and low magnetic field when magnetic field was aligned with the c-axis. Thus, the combined effect of nanoinclusions and crystalline defects, in the present case, nanorods and stacking faults, can control the interface of nanoinclusion pinning centers, opening the interface design to realize the ideal pinning situation.

    DOI: 10.1088/1361-6668/abaebf

    Scopus

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  • Dual-Beam Irradiation Stability of Amorphous Silicon Oxycarbide at 300°C and 500°C 査読有り

    Su Q., Greaves G., Donnelly S.E., Mizuguchi S., Ishimaru M., Nastasi M.

    JOM   72 ( 11 )   4002 - 4007   2020年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    The irradiation stability of a material in the temperature range from 300°C to 500°C represents an important step for a variety of nuclear applications. Here we used dual-beam irradiation to investigate the response of an amorphous silicon oxycarbide (SiOC) to extreme environments (temperature and irradiation). The amorphous SiOC was prepared in thin film form by sputtering and then fabricated into cross-sectional transmission electron microscopy (TEM) specimens, and finally irradiated with helium (He) and krypton (Kr) ions inside a TEM. In-situ TEM observations revealed that He bubble and void formation are highly suppressed after irradiation up to 95 dpa with simultaneous He implantation up to 231 at.%. Atomic pair-distribution functions suggested that the amorphous structures are almost the same before and after irradiation, and no crystallization, nor phase separation was detected. This study demonstrates the stability of amorphous SiOC under dual-beam irradiation at nuclear reactor operation temperatures, suggesting that this material is applicable as a structural material for advanced nuclear reactors.

    DOI: 10.1007/s11837-020-04332-z

    Scopus

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  • Simultaneous achievement of high J <inf>c</inf>and suppressed J <inf>c</inf>anisotropy by hybrid pinning in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7</inf>three-phase-nanocomposite film 査読有り

    Horide T., Torigoe K., Ishimaru M., Kita R., Awaji S., Matsumoto K.

    Superconductor Science and Technology   33 ( 10 )   2020年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    Nanoscale pinning centers are introduced into YBa2Cu3O7 (YBCO) films and tapes to improve vortex pinning and critical current density (J c) for coated conductor application. While pinning with a single type of pinning center has been mainly investigated, hybrid pinning with multiple types of pinning center is expected to be more promising for simultaneously achieving high J c values and suppressing J c anisotropy. In the present study, a three-phase-nanocomposite film consisting of an YBCO matrix, BaHfO3 nanorods and Y-O nanoparticles was fabricated. A global pinning force maximum (F p,max, where F p = J c B) of 1.57 TN m-3 at 4.2 K, which is as high as the record level of F p,max, was achieved by the hybrid pinning of BaHfO3 nanorods and Y-O nanoparticles. Furthermore, the hybrid pinning improved the angular dependence of J c. The pinning contribution from nanoparticles increased with lowering temperature, which can explain the high J c at low temperature. Thus, the present study successfully demonstrates a highly effective structure that can simultaneously achieve suppressed J c anisotropy and a record level of J c.

    DOI: 10.1088/1361-6668/aba544

    Scopus

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  • Dual crystallization modes of sputter-deposited amorphous SiGe films 査読有り

    Okugawa M., Nakamura R., Numakura H., Ishimaru M., Yasuda H.

    Journal of Applied Physics   128 ( 1 )   2020年07月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    The crystallization behavior of sputter-deposited films of amorphous Si (a-Si) and SiGe alloys (a-SiGe) induced by electron irradiation at room temperature and by thermal annealing was investigated by in situ transmission electron microscopy. On electron irradiation at room temperature, extremely rapid crystallization, so-called explosive crystallization, occurred at a higher electron flux but not at a lower electron flux. On in situ thermal annealing, explosive crystallization occurred preferentially and partially at low temperatures in Ge-rich a-SixGe100-x for x < 50 but not for x > 50. These results indicate that the increase of Si content in a-SiGe prevents the occurrence of explosive crystallization. We previously proposed that explosive crystallization can occur in pristine a-Ge films via the interface of a liquid-like, high-density amorphous state at the growth front. An increase in the instability of this high-density amorphous state caused by the increase of Si in a-SiGe apparently gives rise to the suppression of explosive crystallization.

    DOI: 10.1063/5.0010202

    Scopus

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  • Effects of hydrogen on structure and crystallization behavior of sputter-deposited amorphous germanium films 査読有り

    Hanya Y., Nakamura R., Okugawa M., Ishimaru M., Oohata G., Yasuda H.

    Japanese Journal of Applied Physics   59 ( 7 )   2020年07月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    We examined by transmission electron microscopy the structure and crystallization behavior of hydrogenerated and non-hydrogenerated amorphous germanium films (a-Ge:H and a-Ge) prepared by sputtering to figure out the effects of hydrogen on them. In pair-distribution function, first and second peaks at the interatomic distance of 0.26 and 0.40 nm, respectively, were found to be higher and sharper in a-Ge:H than in a-Ge; therefore amorphous structure was organized in a more ordered state within a short range by hydrogeneration. On thermal annealing, fine nanograins (FGs) of about 10 nm in size appeared preferentially at 350 °C and above in a-Ge:H, which is in contrast with the formation of coarse particles of about 100 nm in size at 500 °C in a-Ge. Hydrogeneration would make a certain number of short-range ordered clusters distributed in the amorphous matrix, inducing the preferential formation of FGs at lower temperatures.

    DOI: 10.35848/1347-4065/ab9cd9

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  • Liquid-mediated crystallization of amorphous GeSn under electron beam irradiation 査読有り

    Inenaga K., Motomura R., Ishimaru M., Nakamura R., Yasuda H.

    Journal of Applied Physics   127 ( 20 )   2020年01月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    Crystallization processes of amorphous germanium–tin (GeSn) under low-energy electron-beam irradiation were examined using transmission electron microscopy (TEM). Freestanding amorphous GeSn thin films were irradiated with a 100 keV electron beam at room temperature. The amorphous GeSn was athermally crystallized by electron-beam irradiation, when the electron flux exceeded the critical value. Heterogeneous structures consisting of nano- and micro-crystallites were formed after crystallization of amorphous GeSn with ∼24 at. % Sn in the as-sputtered amorphous state. In situ TEM observations of structural changes under electron-beam irradiation revealed that random nucleation and growth of nanocrystallites occur at the early stage of crystallization, followed by rapid formation of micro-grains surrounding the nanocrystals. It has been suggested that the growth of micro-grains progresses via supercooled liquid Sn at the amorphous/crystalline interface. The resultant GeSn grains with a size of a few micrometers contained ∼15 at. % Sn, much larger than the solubility limit of Sn in Ge (∼1 at. % Sn).

    DOI: 10.1063/5.0006416

    Kyutacar

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  • Deposition-temperature dependence of vortex pinning property in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7</inf>+BaHfO<inf>3</inf> films 査読有り

    Horide T., Torigoe K., Kita R., Nakamura R., Ishimaru M., Awaji S., Matsumoto K.

    Materials Transactions ( 日本金属学会 )   61 ( 3 )   449 - 454   2020年01月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    Improvement of critical current density (Jc) in magnetic fields is required in YBa2Cu3O7 films, and process parameters should be optimized for controlling pinning centers. In the present study, a deposition temperature was varied in pulsed laser deposition of YBa2Cu3O7+BaHfO3 films to control the nanorod structure, and its influence on Jc was analyzed. The YBa2Cu3O7+BaHfO3 film deposited at 850°C exhibited pinning force maximum (Fp,max.) as high as 413GN/m3 at 40 K, while the Fp,max. for the deposition temperature of 850°C at 77K was smaller than that in the YBa2Cu3O7+BaHfO3 film deposited at 900°C. A critical temperature decreased and matching field increased with decreasing the deposition temperature. Increase in deposition temperature is effective in improving the Fp,max. in high temperatures, since the critical temperature and matching field dependences of Jc value dominate the Fp,max. On the other hand, low deposition temperature improves the Fp,max. in low temperatures since the Fp shift in accordance with matching field is dominant to the Fp,max. Thus, the deposition temperature should be set in pulsed laser deposition of YBa2Cu3O7 films containing nanorods considering the Jc variation with critical temperature and matching field.

    DOI: 10.2320/matertrans.MT-M2019303

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    CiNii Article

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  • Carrier and heat transport properties of poly-crystalline GeSn films for thin-film transistor applications 査読有り

    Uchida N., Hattori J., Lieten R., Ohishi Y., Takase R., Ishimaru M., Fukuda K., Maeda T., Locquet J.

    Journal of Applied Physics   126 ( 14 )   2019年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2019 Author(s). Thin-film transistors (TFTs) on insulator substrates are widely used in applications from liquid crystal displays to sensor devices. However, insulator substrates with low heat conductivity lead to unfavorable self-heating effects in the channel regions. Herein, the carrier and heat transport properties of polycrystalline GeSn films on SiO2/Si substrates were improved by suppressing Sn segregation in the films to fabricate GeSn channel TFTs. Alloying with 5.5% Sn enabled the formation of larger grains than those in poly-Ge films after low-temperature annealing (below 520 °C) without Sn segregation. In addition, the films had a hole mobility of 40 cm2 V-1 s-1 at a hole density of 1.1 × 1018 cm-3 and a thermal conductivity of 12.1 Wm-1 K-1 at room temperature. The temperature dependences of the carrier and heat transport properties of the poly-GeSn films were investigated to accurately simulate a device with a poly-GeSn channel TFT. This was achieved by using the carrier transport measurements and numerical simulations of the heat transport in the Debye model. The simulated device allowed an accurate assessment of the self-heating effects of the TFT and thus provides a design guide for TFTs.

    DOI: 10.1063/1.5085470

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  • Thermoelectric Property in Orthorhombic-Domained SnSe Film 査読有り

    Horide T., Murakami Y., Hirayama Y., Ishimaru M., Matsumoto K.

    ACS Applied Materials and Interfaces   11 ( 30 )   27057 - 27063   2019年07月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2019 American Chemical Society. Single-crystal SnSe exhibits extremely high thermoelectric properties, and fabrication of SnSe films is promising for practical application and basic research on properties. However, the high thermoelectric properties have not yet been reported in SnSe films and their thermoelectric properties and nanostructure have not yet been analyzed in detail. In the present study, a-axis-oriented epitaxial SnSe films were prepared to discuss the thermoelectric properties of the SnSe films. While the electrical conductivity of the films was orders of magnitude smaller than that in the single crystals at room temperature, surprisingly, the thermoelectric property (power factor) of the films was slightly higher than that in the single crystals at high temperatures (∼300 °C). The SnSe films contained orthorhombic domain boundaries with a spacing of several hundred nanometers. The orthorhombic domain boundaries caused carrier scattering and degraded the mobility of the films at room temperature, but their effect decreased with increasing temperature. Thus, the carrier scattering at domain boundaries results in characteristic temperature dependence of thermoelectric properties in the SnSe films. High thermoelectric properties at high temperatures were successfully achieved in the SnSe films in spite of the existence of domain boundaries, demonstrating the possibility of high-performance of SnSe thermoelectric films.

    DOI: 10.1021/acsami.9b04868

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  • Observation of inhomogeneous depinning in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7</inf> composite multilayers 査読有り

    Horide T., Ishimaru M., Matsumoto K.

    Superconductor Science and Technology   32 ( 8 )   2019年06月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2019 IOP Publishing Ltd. Composite multilayer films (CMLs) comprising YBa2Cu3O7 + BaHfO3 (4.7 vol%)/YBa2Cu3O7 + BaHfO3 (3.1 vol%) were fabricated, and vortex behavior in the CMLs was evaluated to discuss inhomogeneous depinning of vortices. Magnetic field and angular dependences of critical current density (J c) in the CMLs were similar to those in the YBa2Cu3O7 + BaHfO3 (4.7 vol%) single layer film (SL). Variation of the CML structure shifted the matching field effect in global pinning force and irreversibility temperature. The J c in the YBa2Cu3O7 + BaHfO3 (4.7 vol%) SL was smaller than that in the YBa2Cu3O7 + BaHfO3 (3.1 vol%) SL, suggesting that vortices preferentially moved along the low-J c layers in the CMLs. The high-J c layers pinned the vortices in the low-J c layers, resulting in a shift of the matching field effect. These observations are characteristic of inhomogeneous depinning of vortices in the CMLs. The inhomogeneous depinning as well as pinned configuration should be considered for understanding J c and for structural design of pinning centers in YBa2Cu3O7 films.

    DOI: 10.1088/1361-6668/ab1d2c

    Scopus

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  • Direct observations of crystallization processes of amorphous GeSn during thermal annealing: A temperature window for suppressing Sn segregation 査読有り

    Higashiyama M., Ishimaru M., Okugawa M., Nakamura R.

    Journal of Applied Physics   125 ( 17 )   2019年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2019 Author(s). The solubility limit of tin (Sn) in germanium (Ge) is very small, and, therefore, it is difficult to synthesize high Sn concentration GeSn crystals by conventional methods. An amorphous phase can contain elements beyond the solubility limit of the crystal state, and, therefore, recrystallization of the amorphous alloy is one of the possible ways to realize materials far from the equilibrium state. To suppress Sn precipitation during thermal annealing, knowledge of crystallization processes is required. In the present study, amorphous GeSn thin films with different Sn concentrations were prepared by sputtering, and their crystallization processes were examined by in situ transmission electron microscopy. It was found that the crystallization temperature decreases with increasing Sn concentration, and it became lower than the eutectic temperature when the Sn concentration exceeded ∼25 at. %. Radial distribution function analyses revealed that phase decomposition occurs in the amorphous state of the specimens which crystallize below the eutectic temperature, and Sn crystallites were simultaneously precipitated with crystallization. On the other hand, no remarkable phase decomposition was detected in amorphous GeSn with <25 at. % Sn. Sn precipitation occurred at a higher temperature than the crystallization in these specimens, and the difference between the crystallization and Sn precipitation temperatures became large with decreasing Sn concentration. Because of the existence of this temperature difference, a temperature window for suppressing Sn segregation existed. We demonstrated that large GeSn grains with high Sn concentration could be realized by annealing the specimens within the temperature window.

    DOI: 10.1063/1.5086480

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  • Compositional effects on radiation tolerance of amorphous silicon oxycarbide 査読有り

    Mizuguchi S., Inoue S., Ishimaru M., Su Q., Nastasi M.

    Journal of Nuclear Materials   518   241 - 246   2019年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2019 Elsevier B.V. Relationships between amorphous structures and radiation tolerance of silicon oxycarbide (SiOC) glasses with different composition, SiO 2 :SiC = 2:1 (SiO 2 -rich), 1:1 (equiatomic), and 1:2 (SiC-rich), were examined by transmission electron microscopy and atomic pair-distribution function (PDF). These specimens were irradiated with 120 keV helium (He) ions at room temperature. The PDF results indicated that the structure of SiOC alloys are almost the same in irradiation and implantation regions. It was found that SiO 2 -rich specimens show a greater radiation resistance than SiC-rich ones: the formation of He bubbles was highly suppressed in the SiO 2 -rich and equiatomic compositions after even 90 at.% He implantation, whereas pronounced swelling occurred in the SiC-rich composition. The first sharp diffraction peak revealed that the size of network voids formed by connecting the SiO x C 4-x tetrahedra in SiO 2 -rich and equiatomic specimens is much larger than the diameter of He atom, suggesting that He atoms can easily migrate in the amorphous SiOC networks.

    DOI: 10.1016/j.jnucmat.2019.03.012

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  • Nonlocal self-organization of long stacking faults from highly strained nanocomposite film of complex oxide 査読有り

    Horide T., Ishimaru M., Sato K., Matsumoto K.

    Physical Review Materials   3 ( 1 )   2019年01月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2019 American Physical Society. Elastic strain and defects are important key words for controlling structure and properties in films. While epitaxial strain and misfit dislocations have been discussed in conventional films, the evolution of strain and defect can be significantly varied by nanocomposite strain and complicated defects in oxides. In the present study, long stacking faults with a spacing of 5-30 nm and a length of >500nm were self-organized by ex situ annealing highly strained nanocomposite films of YBa2Cu3O7-δ(YBCO)+BaMO3(M=Hf,Sn). It is surprising that the nonlocal nature of stacking faults, namely, the structural correlation over >500nm, was observed in spite of the local configuration of the nanocomposite interface. This kind of structural variation was not observed in the pure YBCO film without nanorods, even when the same annealing was performed. A strain energy analysis showed that the stacking fault formation led to the strain energy minimum by reducing the nanocomposite strain. The layered structure of YBCO stacking faults and the large nanocomposite strain realized the present nonlocal self-organization, which is not observed in the conventional systems with epitaxial strain and misfit dislocations.

    DOI: 10.1103/PhysRevMaterials.3.013403

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  • Application of the Tersoff interatomic potential to pressure-induced polyamorphism of silicon 査読有り 国際誌

    Mukuno R., Ishimaru M.

    Japanese Journal of Applied Physics   58 ( 10 )   2019年01月

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    担当区分:責任著者   記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2019 The Japan Society of Applied Physics. Molecular-dynamics simulations of the pressure-induced structural changes of amorphous Si have been performed using the Tersoff interatomic potential to examine the validity of this potential. Amorphous Si with a tetrahedral network was prepared by melt-quenching methods, and it was then compressed under isothermal-isobaric conditions. The changes of the atomic pair-distribution functions and static structure factors with increasing pressure were in agreement with those observed experimentally. The pressure-induced amorphous structures contained a short-range order similar to the β-tin and Imma structures. These results suggest that the Tersoff potential is suitable for describing the structural changes of amorphous Si under high pressure.

    DOI: 10.7567/1347-4065/ab42f3

    Kyutacar

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  • Deposition-temperature dependence of vortex pinning property in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7</inf>+BaHfO<inf>3</inf> Film 査読有り

    Horide T., Torigoe K., Kita R., Nakamura R., Ishimaru M., Awaji S., Matsumoto K.

    Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals ( 公益社団法人 日本金属学会 )   83 ( 9 )   320 - 326   2019年01月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2019 The Japan Institute of Metals and Materials. Improvement of critical current density (Jc) in magnetic fields is required in YBa2Cu3O7 films, and process parameters should be optimized for controlling pinning centers. In the present study, a deposition temperature was varied in pulsed laser deposition of YBa2Cu3O7+BaHfO3 films to control the nanorod structure, and its influence on Jc was analyzed. The YBa2Cu3O7+BaHfO3 film deposited at 850°C exhibited pinning force maximum(Fp,max) as high as 413 GN/m3 at 40 K, while the Fp,max for the deposition temperature of 850°C at 77 K was smaller than that in the YBa2Cu3O7+BaHfO3 film deposited at 900°C. A critical temperature decreased and matching field increased with decreasing the deposition temperature. Increase in deposition temperature is effective in improving the Fp,max in high temperatures, since the critical temperature and matching field dependences of Jc value dominate the Fp,max. On the other hand, low deposition temperature improves the Fp,max in low temperatures since the Fp shift in accordance with matching field is dominant to the Fp,max. Thus, the deposition temperature should be set in pulsed laser deposition of YBa2Cu3O7 films containing nanorods considering the Jc variation with critical temperature and matching field.

    DOI: 10.2320/jinstmet.JA201902

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  • スパッタリング法によるアモルファスFe-B合金薄膜の作製と透過型電子顕微鏡による構造解析 査読有り

    仲村 龍介, 半谷 祐樹, 石丸 学, 和田 武

    鉄と鋼 ( 日本鉄鋼協会 )   105 ( 10 )   1017 - 1021   2019年01月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)

    <p>Amorphous Fe-B thin films of the concentration range between 12 and 25 at.% B were prepared by radio frequency sputtering techniques, and their local structures were examined by transmission electron microscopy. Pair-distribution-function analyses of Fe-12, -18 and -25 at.%B for a region of 300 nm in diameter revealed a systematic trend according to the concentration; with the increase in B concentration, the intensity of the weak shoulder peak at 0.205 nm for the Fe-B pair increases whereas those of main peaks for Fe-Fe pair decrease. In electron diffraction patterns of the samples taken by a probe size of 2 nm, the specific spots of iron-borides, such as Fe<sub>3</sub>B and Fe<sub>23</sub>B<sub>6</sub>, were detected, suggesting the atomic arrangement of the compounds in the amorphous matrices.</p>

    DOI: 10.2355/tetsutohagane.TETSU-2019-032

    CiNii Article

    その他リンク: https://ci.nii.ac.jp/naid/130007719957

  • 低エネルギー電子線照射によるアモルファスGeSnの結晶化 査読有り

    石丸 学, 仲村 龍介

    顕微鏡 ( 公益社団法人 日本顕微鏡学会 )   54 ( 3 )   126 - 130   2019年01月

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    担当区分:筆頭著者   記述言語:日本語   掲載種別:記事・総説・解説・論説等(学術雑誌)

    <p>材料が照射場に曝されると欠陥が導入され,欠陥蓄積に伴い構造変化が引き起こされる.照射環境下における材料の損傷過程は,「はじき出し効果」と「電子励起効果」によるものに大別される.電子線照射においては,加速電圧が高いときには前者が,低いときには後者が顕著になる.これらの効果は構造解析に対して負の影響を与えるため,電子顕微鏡観察に際しては極力避けるべきものである.一方,照射効果を利用することにより,通常の手法では実現することが難しい平衡状態から離れた材料の創製が可能である.本稿では,低エネルギー電子線照射によるアモルファスの結晶化を利用して,次世代フレキシブルディスプレイとしての応用が期待されている多結晶GeSn薄膜を,非熱的過程により作製した例を紹介する.</p>

    DOI: 10.11410/kenbikyo.54.3_126

    CiNii Article

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  • 特集にあたって 査読有り

    石丸 学

    顕微鏡 ( 公益社団法人 日本顕微鏡学会 )   54 ( 3 )   109 - 109   2019年01月

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    担当区分:筆頭著者   記述言語:日本語   掲載種別:記事・総説・解説・論説等(学術雑誌)

    DOI: 10.11410/kenbikyo.54.3_109

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  • Chalcopyrite ZnSnSb<inf>2</inf>: A Promising Thermoelectric Material 査読有り

    Nomura A., Choi S., Ishimaru M., Kosuga A., Chasapis T., Ohno S., Snyder G., Ohishi Y., Muta H., Yamanaka S., Kurosaki K.

    ACS Applied Materials and Interfaces   10 ( 50 )   43682 - 43690   2018年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2018 American Chemical Society. Ternary compounds with a tetragonal chalcopyrite structure, such as CuGaTe2, are promising thermoelectric (TE) materials. It has been demonstrated in various chalcopyrite systems, including compounds with quaternary chalcopyrite-like structures, that the lattice parameter ratio, c/a, being exactly 2.00 to have a pseudo-cubic structure is key to increase the degeneracy at the valence band edge and ultimately achieve high TE performance. Considering the fact that ZnSnSb2 with a chalcopyrite structure is reported to have c/a close to 2.00, it is expected to have multiple valence bands leading to a high p-type zT. However, there are no complete investigations on the high temperature TE properties of ZnSnSb2 mainly because of the difficulty of obtaining a single-phase ZnSnSb2. In the present study, pure ZnSnSb2 samples with no impurities are synthesized successfully using a Sn flux-based method and TE properties are characterized up to 585 K. Transport properties and thermal analysis indicate that the structure of ZnSnSb2 remains chalcopyrite with no order-disorder transition and clearly show that ZnSnSb2 can be made to exhibit a high zT in the low-to-mid temperature range through further optimization.

    DOI: 10.1021/acsami.8b16717

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  • Structure of crystallized particles in sputterdeposited amorphous germanium films 査読有り

    Okugawa M., Nakamura R., Hirata A., Ishimaru M., Yasuda H., Numakura H.

    Journal of Applied Crystallography   51 ( 5 )   1467 - 1473   2018年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2018 International Union of Crystallography. Pristine thin films of amorphous Ge prepared by sputtering are unstable and form coarse crystalline particles of 100 nm in size upon crystallization by electron irradiation. These crystalline particles exhibit unusual diffraction patterns that cannot be understood from the diamond cubic structure. The structure has previously been assumed to be a metastable hexagonal form. In the present work, the structure of the coarse crystalline particles has been analysed in detail by transmission electron microscopy, considering the possibility that those diffraction patterns might occur with the diamond cubic structure if the particle consists of thin twin layers. By high-resolution lattice imaging the particles have been shown to be of the diamond cubic structure containing a high density of twins and stacking faults parallel to {111}. With such defects, diffraction patterns can be complex because of the following effects: superposition of two or more diffraction patterns of the same structure but of different orientations, double diffraction through twin crystals, and streaks parallel to the thin crystal which give rise to extra diffraction spots. It is found that diffraction patterns taken from various orientations can be explained in terms of these effects.

    DOI: 10.1107/S1600576718012153

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  • Molecular-dynamics simulations of solid phase epitaxy in silicon: Effects of system size, simulation time, and ensemble 査読有り

    Kohno K., Ishimaru M.

    Japanese Journal of Applied Physics   57 ( 9 )   2018年09月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2018 The Japan Society of Applied Physics. Solid phase epitaxial (SPE) recrystallization of amorphous Si on a Si(001) substrate was examined by large-scale (6144-129024 Si atoms), longtime (up to 2000 ns) molecular-dynamics (MD) simulations using the empirical Tersoff interatomic potential. We particularly focused on the effects of the MD cell size, simulation time, and ensemble on the SPE growth rate. We found that the simulations under the isothermal-isochoric conditions (NVT ensemble) show a higher crystallization rate than those under the isothermal-isobaric conditions (NPT ensemble). The system size dealt with in the present MD simulation, i.e., >6144 Si atoms, was enough to estimate the SPE growth rate. The Arrhenius plot of the growth rate between 1300 and 1600 K exhibited a single activation energy, >2.4 eV, which is in agreement with the experimental value (>2.7 eV). However, the growth rate at temperatures below 1300 K deviated from the extrapolated ones from 1300 to 1600 K, which is because recrystallization does not reach a steady state: long-time MD simulations are required to estimate the growth rate at low temperature. The structure analysis of amorphous/ crystalline interfaces suggested that the braking of atomic bonds parallel to the interface becomes a rate-limiting step of the SPE growth.

    DOI: 10.7567/JJAP.57.095503

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  • Geometric and compositional factors on critical current density in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7-δ</inf>films containing nanorods 査読有り

    Horide T., Nagao S., Izutsu R., Ishimaru M., Kita R., Matsumoto K.

    Superconductor Science and Technology   31 ( 6 )   2018年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2018 IOP Publishing Ltd. Critical current density (Jc) was investigated in YBa2Cu3O7-δfilms containing nanorods prepared with various nanorod materials, with variation of nanorod content, substrate temperature, and oxidization condition. Three types of compositional situation were realized: films containing strain induced oxygen vacancies; fully oxidized films containing cation compositional deviation; and oxygen deficient films. Normalized Jc-B behavior was determined via the matching field, which is a geometric factor, regardless of the compositional details. A Jc-critical temperature (Tc) relation depending on distribution and fraction of compositional deviation (cation compositional deviation and strain induced oxygen vacancies) was found: the Jcvalues decreased with decreasing Tcdue to the effect of Tcon nanorod pinning strength in the fully oxidized films; Jcdecreased with decreasing oxygen pressure in the film cooling process after film deposition in spite of Tcremaining almost the same, due to reduction of the effective area for current flow in the oxygen deficient films. Thus, a Jclandscape based on geometric and compositional factors was obtained. The study highlights the importance of the Jc-Tcanalysis in the understanding of Jcin YBa2Cu3O7-δfilms containing nanorods.

    DOI: 10.1088/1361-6668/aabe68

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  • 第12回ミクロ・ナノ解析に関する日本・ポーランド合同セミナー開催報告 査読有り

    石丸 学

    まてりあ ( 公益社団法人 日本金属学会 )   57 ( 12 )   631 - 631   2018年01月

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    担当区分:筆頭著者   記述言語:日本語   掲載種別:記事・総説・解説・論説等(学術雑誌)

    DOI: 10.2320/materia.57.631

    CiNii Article

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  • Proton-Driven Intercalation and Ion Substitution Utilizing Solid-State Electrochemical Reaction 査読有り

    Fujioka M., Wu C., Kubo N., Zhao G., Inoishi A., Okada S., Demura S., Sakata H., Ishimaru M., Kaiju H., Nishii J.

    Journal of the American Chemical Society   139 ( 49 )   17987 - 17993   2017年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2017 American Chemical Society. The development of an unconventional synthesis method has a large potential to drastically advance materials science. In this research, a new synthesis method based on a solid-state electrochemical reaction was demonstrated, which can be made available for intercalation and ion substitution. It was referred to as proton-driven ion introduction (PDII). The protons generated by the electrolytic dissociation of hydrogen drive other monovalent cations along a high electric field in the solid state. Utilizing this mechanism, Li + , Na + , K + , Cu + , and Ag + were intercalated into a layered TaS 2 single crystal while maintaining high crystallinity. This liquid-free process of ion introduction allows the application of high voltage around several kilovolts to the sample. Such a high electric field strongly accelerates ion substitution. Actually, compared to conventional solid-state reaction, PDII introduced 15 times the amount of K into Na super ionic conductor (NASICON)-structured Na 3-x K x V 2 (PO 4 ) 3 . The obtained materials exhibited a thermodynamically metastable phase, which has not been reported so far. This concept and idea for ion introduction is expected to form new functional compounds and/or phases.

    DOI: 10.1021/jacs.7b09328

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  • Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide 査読有り

    Su Q., Inoue S., Ishimaru M., Gigax J., Wang T., Ding H., Demkowicz M., Shao L., Nastasi M.

    Scientific Reports   7 ( 1 )   2017年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2017 The Author(s). Despite recent interest in amorphous ceramics for a variety of nuclear applications, many details of their structure before and after irradiation/implantation remain unknown. Here we investigated the short-range order of amorphous silicon oxycarbide (SiOC) alloys by using the atomic pair-distribution function (PDF) obtained from electron diffraction. The PDF results show that the structure of SiOC alloys are nearly unchanged after both irradiation up to 30 dpa and He implantation up to 113 at%. TEM characterization shows no sign of crystallization, He bubble or void formation, or segregation in all irradiated samples. Irradiation results in a decreased number of Si-O bonds and an increased number of Si-C and C-O bonds. This study sheds light on the design of radiation-tolerant materials that do not experience helium swelling for advanced nuclear reactor applications.

    DOI: 10.1038/s41598-017-04247-x

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  • Formation of metastable phases in Zr-ion-irradiated Al<inf>2</inf>O<inf>3</inf>upon thermal annealing 査読有り

    Oka N., Ishimaru M., Tane M., Sina Y., McHargue C., Sickafus K., Alves E.

    Microscopy   66 ( 6 )   388 - 396   2017年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © The Author 2017. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved. Formation of metastable phases in Zr-ion-irradiated corundum alumina (Al 2 O 3 ) upon thermal annealing was examined using transmission electron microscopy. A metastable cubic spinel phase was formed in the topmost layer of the as-irradiated microstructure. During thermal annealing at temperatures ranging from 1073 to 1273 K, this spinel layer grew in extent via an unusual corundum-to-spinel phase transformation. A normal spinel-to-corundum phase transformation was observed at post-irradiation annealing temperatures greater than 1473 K. In addition, ZrO 2 nanocrystals embedded in α-Al 2 O 3 were observed to form at these higher temperatures. High-resolution transmission electron microscopy observations and electron diffraction experiments revealed that the structure of the ZrO 2 precipitates observed in this study are consistent with a highpressure metastable orthorhombic phase of ZrO 2 known as the Ortho-I phase.

    DOI: 10.1093/jmicro/dfx028

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  • Low-temperature synthesis of crystalline GeSn with high Sn concentration by electron excitation effect 査読有り

    Kimura T., Ishimaru M., Okugawa M., Nakamura R., Yasuda H.

    Japanese Journal of Applied Physics   56 ( 10 )   2017年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2017 The Japan Society of Applied Physics. The low-temperature synthesis of high-Sn-concentration GeSn is challenging in realizing flexible thin-film transistors and solar cells. Because of athermal processes, irradiation with energetic particles is anticipated to significantly reduce the processing temperature for device fabrication. Here, we demonstrated that polycrystalline Ge with 30 at.% Sn can be realized at room temperature by the electron-beam-induced recrystallization of amorphous GeSn. We found that inelastic electronic stopping, the so-called electron excitation effect, plays an important role in the recrystallization of amorphous GeSn.

    DOI: 10.7567/JJAP.56.100307

    Kyutacar

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  • Inhomogeneous crystallization of sputter-deposited amorphous Ge films 査読有り

    Nakamura R., Okugawa M., Ishimaru M., Yasuda H., Numakura H.

    AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings   276 - 278   2017年08月

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)

    Crystallization of amorphous germanium films induced by electron irradiation was investigated by in-situ transmission electron microscopy under a low electron-eneigy of 125 keV with various pre-Aging treatments at room temperature. Different microstructures were observed depending on the aging time: coarse and spherical nanoparticles grew rapidly in samples aged for less than 3 months, while a homogeneous nanociystalline structure with a grain size of about 10 nm appealed in samples aged for over 7 months. Analyses by the pair distribution lunction revealed that the initial structure is inhomogeneous, consisting of a mixture of amorphous regions and some ordered arrangements, but turned spontaneously to homogeneous random amorphous structures during aging. Such inhomogeneity could be an origin of the rapid growth of nanoparticles in the samples not subjected to the long-Time aging.

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  • Strong c-axis correlated pinning and hybrid pinning in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7-δ</inf> films containing BaHfO<inf>3</inf> nanorods and stacking faults 査読有り

    Horide T., Otsubo K., Kita R., Matsukida N., Ishimaru M., Awaji S., Matsumoto K.

    Superconductor Science and Technology   30 ( 7 )   2017年06月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2017 IOP Publishing Ltd. High critical current density (J c ) was achieved in low temperatures of 40 and 20 K in YBa 2 Cu 3 O 7-δ films containing elongated BaHfO 3 nanorods and stacking faults, which were prepared using pulsed laser deposition and post-oxygen-annealing. The YBa 2 Cu 3 O 7-δ + BaHfO 3 film exhibited global pinning force maximum (F p,max ) of 312 GNm -3 at 40 K and 619 GNm -3 at 20 K due to strong pinning by nanorods. These Fp,max values are comparable to those in the previously-reported high-J c films with almost the same matching field. Thus, the present study demonstrated that YBa 2 Cu 3 O 7-δ superconducting matrix realized high J c in low temperatures like other REBa 2 Cu 3 O 7-δ (RE = Gd, Sm, (Gd, Y)). Furthermore, high J c was obtained also for magnetic field parallel to the ab-plane, indicating hybrid pinning of nanorods and stacking faults. Thus, the stacking faults significantly affected the J c properties in the YBa 2 Cu 3 O 7-δ films containing nanorods.The present film structure with strong c-axis correlated pinning and hybrid pinning is effective in simultaneous control of J c values and J c anisotropy in YBa 2 Cu 3 O 7-δ films.

    DOI: 10.1088/1361-6668/aa70d3

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  • Pin potential effect on vortex pinning in YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7-δ</inf> films containing nanorods: Pin size effect and mixed pinning 査読有り

    Horide T., Matsukida N., Ishimaru M., Kita R., Awaji S., Matsumoto K.

    Applied Physics Letters   110 ( 5 )   2017年01月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2017 Author(s).The pin size effect and mixed pinning of nanorods and matrix defects are discussed for YBa2Cu3O7-δ films containing nanorods. BaSnO3 nanorods with a diameter of 11 nm and BaHfO3 nanorods with a diameter of 7 nm were prepared, and critical current density (Jc) and resistivity were measured in the films. When the coherence length was larger than the nanorod size at high temperatures near the critical temperature, the trapping angle and activation energy of the vortex flow depended on the nanorod diameter. At a moderate temperature of 65−77 K, the pin size effect on Jc disappeared since the coherence length became smaller than the nanorod size. At a low temperature of 20 K, the contribution from matrix pinning became comparable to that of nanorods in a high magnetic field due to the small coherence length. Thus, the temperature-dependent coherence length caused the pin potential situation to vary significantly, namely, the pin size effect and mixed pinning, which strongly affected vortex pinning in YBa2Cu3O7-δ containing nanorods.

    DOI: 10.1063/1.4975300

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    その他リンク: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85011312003&origin=inward

  • Molecular dynamics study on structural relaxation processes in amorphous germanium 査読有り

    Imabayashi S., Ishimaru M.

    Materials Transactions   58 ( 6 )   857 - 861   2017年01月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    © 2017 The Japan Institute of Metals and Materials.The structural relaxation of amorphous germanium was examined by molecular dynamics simulations based on the empirical Tersoff interatomic potential. Although the Tersoff potential overestimated both the melting and glass transition temperatures, it was able to reproduce the structural relaxation behavior. The potential energy decreases with thermal annealing below the glass transition temperature, but occasionally increases during structural relaxation. The mean square displacement of atoms also increases in these periods. These changes were attributed to cooperative atomic motion during the structural relaxation. Atomic trajectories revealed that structural changes are induced by spatially- and temporally-inhomogeneous atomic motions: atomically mobile and immobile regions coexist during structural relaxation.

    DOI: 10.2320/matertrans.M2017036

    Scopus

    CiNii Article

    その他リンク: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85019624457&origin=inward

  • アモルファスGeにおける構造緩和過程の分子動力学法による解析 査読有り

    Imabayashi S., Ishimaru M.

    日本金属学会誌   81 ( 2 )   66 - 70   2017年01月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)

    © 2016 The Japan Institute of Metals and Materials.Structural relaxation of amorphous germanium has been examined by molecular dynamics simulations based on the empirical Tersoff interatomic potential. Although the Tersoff potential overestimated both the melting and glass transition temperatures, it was found that this potential can reproduce the behavior of structural relaxation. The potential energy decreased with thermal annealing below the glass transition temperature, but it sometimes increased during structural relaxation. The mean square displacement of atoms also increased at the corresponding period. These changes were attributed to the cooperative atomic motion during structure relaxation. Atomic trajectories revealed that structural changes are induced by spatially- and temporally-inhomogeneous atomic motions: atomic mobile and immobile regions coexisted during structural relaxation.

    DOI: 10.2320/jinstmet.J2016051

    Scopus

    CiNii Article

    その他リンク: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85013986475&origin=inward

  • 透過電子顕微鏡法による照射誘起構造変化の解析 招待有り 査読有り

    石丸 学

    顕微鏡 ( 公益社団法人 日本顕微鏡学会 )   52 ( 1 )   24 - 28   2017年01月

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    担当区分:筆頭著者   記述言語:日本語   掲載種別:記事・総説・解説・論説等(学術雑誌)

    <p>照射場を利用した材料創製では,通常の手法では得ることが難しい平衡状態から離れた準安定構造を実現することが出来る.また,機能性材料および構造用材料の照射誘起構造変化に関する研究は,宇宙空間や原子炉等の極限環境下で使用される材料の信頼性を知る上で重要である.本稿では,照射場と材料の相互作用による構造変化およびそれを利用した材料創製に関する最近の研究成果について報告する.準安定構造の形成に関しては,イオン照射アルミナの熱処理過程において見出された,通常の熱処理では起こらないコランダム→スピネル型構造相変態について報告する.一方,耐照射性材料の開発に関する一連の研究では,ナノ構造制御により炭化ケイ素の耐照射性を向上させた例について紹介する.</p>

    DOI: 10.11410/kenbikyo.52.1_24

    CiNii Article

    その他リンク: https://ci.nii.ac.jp/naid/130007689241

  • Behavior of Sn atoms in GeSn thin films during thermal annealing: Ex-situ and in-situ observations 査読有り

    R. Takase, M. Ishimaru, N. Uchida, T. Maeda, K. Sato, R. R. Lieten, J.-P. Locquet

    Journal of Applied Physics   120   245304(1) - 245304(9)   2016年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.4973121

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  • Thermal crystallization of sputter-deposited amorphous Ge films: Competition of diamond cubic and hexagonal phases 査読有り

    M. Okugawa, R. Nakamura, M. Ishimaru, H. Yasuda, H. Numakura

    AIP Advances   6   125035(1) - 125035(9)   2016年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.4972282

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  • Crystallization of sputter-deposited amorphous Ge films by electron irradiation: Effect of low-flux pre-irradiation 査読有り

    M. Okugawa, R. Nakamura, M. Ishimaru, H. Yasuda, H. Numakura

    Journal of Applied Physics   120   134308(1) - 134308(7)   2016年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.4964332

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  • Discovery of Pt based superconductor LaPt5As 査読有り

    M. Fujioka, M. Ishimaru, T. Shibuya, Y. Kamihara, C. Tabata, H. Amitsuka, A. Miura, M. Tanaka, Y. Takano, H. Kaiju, J. Nishi

    Journal of the American Chemical Society   138   9927 - 9934   2016年07月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1021/jacs.6b04976

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  • Amorphization resistance of nano-engineered SiC under heavy ion irradiation 査読有り

    K. Imada, M. Ishimaru, H. Xue, Y. Zhang, S. Shannon, and W. J. Weber

    Journal of Nuclear Materials   478   310 - 314   2016年06月

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    担当区分:責任著者   記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1016/j.jnucmat.2016.06.031

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  • Role of nanoscale precipitates for enhancement of thermoelectric properties of heavily P-doped Si-Ge alloys 査読有り

    A. Yusufu, K. Kurosaki, Y. Miyazaki, M. Ishimaru, A. Kosuga, Y. Ohishi, H. Muta, and S. Yamanaka

    Materials Transactions   57   1070 - 1075   2016年06月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.2320/matertrans.E-M2016805

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    CiNii Article

  • Structural transition in sputter-deposited amorphous germanium films by aging at ambient temperature 査読有り

    M. Okugawa, R. Nakamura, M. Ishimaru, K. Watanabe, H. Yasuda, and H. Numakura

    Journal of Applied Physics   119   214309(1) - 214309(7)   2016年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.4953234

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  • Influence of matching field on critical current density and irreversibility temperature in YBa2Cu3O7 films with BaMO3 (M=Zr, Sn, Hf) nanorods 査読有り

    T. Horide, K. Taguchi, K. Matsumoto, N. Matsukida, M. Ishimaru, P. Mele, R. Kita

    Applied Physics Letters   108   082601(1) - 082601(5)   2016年01月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.4942463

    Scopus

  • Carrier and heat transport properties of polycrystalline GeSn films on SiO2 査読有り

    M. Uchida, T. Maeda, R. R. Lieten, S. Okajima, Y. Ohishi, R. Takase, M. Ishimaru, J.-P. Locquet

    Applied Physics Letters   2015年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.4937386

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  • Corundum-to-spinel structural phase transformation in alumina 査読有り

    S. Adachi, M. Ishimaru, Y. Sina, C. J. McHargue, K. E. Sickafus, E. Alves

    Nuclear Instruments and Methods in Physics Research B   2015年01月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1016/j.nimb.2015.06.005

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  • Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance 査読有り

    K. Imada, M. Ishimaru, K. Sato, H. Xue, Y. Zhang, S. Shannon, W. J. Weber

    Journal of Nuclear Materials   2015年01月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1016/j.jnucmat.2015.06.036

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  • Ultraviolet Raman spectra of few nanometer thick silicon-on-insulator nanofilms: Lifetime reduction of confined phonons

    V. Poborchii, Y. Morita, M. Ishimaru, T. Tada

    Applied Physics Letters   105   153112(1) - 153112(4)   2014年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.4898672

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  • Bottom-up nanostructured bulk silicon: A practical high-efficiency thermoelectric material 査読有り

    A. Yusufu, K. Kurosaki, Y. Miyazaki, M. Ishimaru, A. Kosuga, Y. Ohishi, H. Muta, and S. Yamanaka

    Nanoscale   6   13921 - 13927   2014年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1039/c4nr04470c

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  • Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5 査読有り

    R. Nakamura, T. Toda, S. Tsukui, M. Tane, M. Ishimaru, T. Suzuki, H. Nakajima

    Journal of Applied Physics   116   033504(1) - 033504(8)   2014年07月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.4889800

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  • Competing effects of electronic and nuclear energy loss on microstructural evolution in ionic-covalent materials 招待有り 査読有り

    Y. Zhang, T. Varga, M. Ishimaru, P. D. Edmondson, H. Xue, P. Liu, S. Moll, F. Namavar, C. Hardiman, S. Shannon, W. J. Weber

    Nuclear Instruments and Methods in Physics Research B   327   33 - 43   2014年04月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1016/j.nimb.2013.10.095

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  • Stability of amorphous Ta-O nanotubes prepared by anodization: Thermal and structural analyses 査読有り

    R. Nakamura, K. Asano, M. Ishimaru, K. Sato, M. Takahashi, H. Numakura

    Journal of Materials Research   29   753 - 760   2014年04月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1557/jmr.2014.44

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  • Ion beam induced epitaxial crystallization of α-Al2O3 at room temperature 査読有り

    Y. Sina, M. Ishimaru, C. J. McHargue, E. Alves, K. E. Sickafus

    Nuclear Instruments and Methods in Physics Research B   321   8 - 13   2014年03月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1016/j.nimb.2013.12.012

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  • Thermoelectric properties of Au nanoparticle-supported Sb1.6Bi0.4Te3 synthesized by a γ-ray irradiation method 査読有り

    D. Jung, K. Kurosaki, S. Seino, M. Ishimaru, K. Sato, Y. Ohishi, H. Muta, S. Yamanaka

    physica status solidi (b)   251   162 - 167   2014年01月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1002/pssb.201349226

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  • Ion tracks and microstructures in barium titanate irradiated with swift heavy ions: A combined experimental and computational study 査読有り

    W. Jiang, R. Devanathan, C. J. Sundgren, M. Ishimaru, K. Sato, T. Varga, S. Manandhar, A. Benyagoub

    Acta Materialia   61   7904 - 7916   2013年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1016/j.actamat.2013.09.029

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  • Structure analysis of composition modulation in epitaxially-grown III-V semiconductor alloys 査読有り

    M. Ishimaru, S. Hasegawa, H. Asahi, K. Sato, T. J. Konno

    Japanese Journal of Applied Physics   52   110120(1) - 110120(6)   2013年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.7567/JJAP.52.110120

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  • Formation of highly oriented nanopores via crystallization of amorphous Nb2O5 and Ta2O5 査読有り

    R. Nakamura, M. Ishimaru, K. Sato, K. Tanaka, H. Nakajima, T. J. Konno

    Journal of Applied Physics   114   124308(1) - 124308(6)   2013年09月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.4822300

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  • 第69回学術講演会 査読有り

    竹田 精治, 石丸 学

    顕微鏡 = Microscopy   48 ( 2 )   142 - 144   2013年08月

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    記述言語:日本語   掲載種別:記事・総説・解説・論説等(学術雑誌)

    CiNii Article

    その他リンク: https://ci.nii.ac.jp/naid/10031194761

  • Growth parameter dependence of structural, electrical and magnetic properties in GaGdN layers grown on GaN(0001) 査読有り

    S. Sano, S. Hasegawa, Y. Mitsuno, K. Higashi, M. Ishimaru, T. Sakurai, H. Ohta, H. Asahi

    Journal of Crystal Growth   378   314 - 318   2013年07月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1016/j.jcrysgro.2012.12.106

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  • Origin of radiation tolerance of 3C-SiC with nanolayered planar defects 査読有り

    M. Ishimaru, Y. Zhang, S. Shannon, W. J. Weber

    Applied Physics Letters   103   033104(1) - 033104(4)   2013年07月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.4813593

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  • Atomic rearrangements in amorphous Al2O3 under electron-beam irradiation 査読有り

    R. Nakamura, M. Ishimaru, H. Yasuda, H. Nakajima

    Journal of Applied Physics   113   064312(1) - 064312(7)   2013年02月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.4790705

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  • Coherent growth of GaGdN layers with high Gd concentration on GaN(0001) 査読有り

    K. Higashi, S. Hasegawa, D. Abe, Y. Mitsuno, S. Komori, F. Ishikawa, M. Ishimaru, H. Asahi

    Applied Physics Letters   101   221902(1) - 221902(4)   2012年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.4767992

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  • Direct imaging of atomic clusters in an amorphous matrix: a Co-C granular thin film 査読有り

    K. Sato, M. Mizuguchi, R. Tang, J.-G. Kang, M. Ishimaru, K. Takanashi, T. J. Konno

    Applied Physics Letters   101   191902(1) - 191902(4)   2012年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.4765362

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  • Novel soft-magnetic underlayer of a bit-patterned media using CoFe-based amorphous alloy thin film 査読有り

    K. Takenaka, N. Saidoh, N. Nishiyama, M. Ishimaru, and A. Inoue

    Intermetallics   30   100 - 103   2012年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1016/j.intermet.2012.03.025

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  • Surface and cross sectional nano-structure of prototype BPM prepared using imprinted glassy alloy thin film 査読有り

    N. Saidoh, K. Takenaka, N. Nishiyama, M. Ishimaru, A. Inoue

    Intermetallics   30   48 - 50   2012年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1016/j.intermet.2012.03.041

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  • Strong atomic ordering in Gd-doped GaN 査読有り

    M. Ishimaru, K. Higashi, S. Hasegawa, H. Asahi, K. Sato, T. J. Konno

    Applied Physics Letters   101   101912(1) - 101912(4)   2012年09月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.4751245

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  • Enhancement of thermoelectric properties of CoSb3-based skutterudites by double filling of Tl and In 査読有り

    A. Harnwunggmoung, K. Kurosali, A. Kosuga, M. Ishimaru, T. Plirdpring, R. Yimnirun, J. Jutimoosik, S. Rujirawat, Y. Ohishi, H. Muta, S. Yamanaka

    Journal of Applied Physics   112   043509(1) - 043509(6)   2012年08月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.4748340

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  • Nanoscale engineering of radiation tolerant silicon carbide 査読有り

    Y. Zhang, M. Ishimaru, T. Varga, T. Oda, C. Hardiman, H. Xue, Y. Katoh, S. Shannon, W. J. Weber

    Physical Chemistry Chemical Physics   14   13429 - 13436   2012年08月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1039/c2cp42342a

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  • Effect of the amount of vacancies on the thermoelectric properties of Cu-Ga-Te ternary compounds 査読有り

    T. Plirdpring, K. Kurosaki, A. Kosuga, M. Ishimaru, A. Harnwunggmoung, T. Sugahara, Y. Ohishi, H. Muta, S. Yamanaka

    Materials Transactions   53   1212 - 1215   2012年07月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.2320/matertrans.E-M2012810

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  • Fabrication of nickel/organic-molecules/nickel nanoscale junctions utilizing thin-film edges and their structural and electrical properties 査読有り

    H. Kaiju, K. Kondo, N. Basheer, N. Kawaguchi, S. White, A. Hirata, M. Ishimaru, Y. Hirotsu, A. Ishibashi

    Japanese Journal of Applied Physics   51   065202(1) - 065202(8)   2012年06月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1143/JJAP.51.065202

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  • Read/write characteristics of a new type of bit-patterned-media using nano-patterned glassy alloy 査読有り

    K. Takenaka, N. Saidoh, N. Nishiyama, M. Ishimaru, M. Futamoto, A. Inoue

    Journal of Magnetism and Magnetic Materials   324   1444 - 1448   2012年04月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1016/j.jmmm.2011.12.009

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  • High-temperature thermoelectric properties of Cu2In4Te7 査読有り

    T. Plirdpring, K. Kurosaki, A. Kosuga, M. Ishimaru, Y. Ohishi, H. Muta, S. Yamanaka

    physica status solidi (RRL)   6   154 - 156   2012年04月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1002/pssr.201206058

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  • Electron diffraction study on chemical short-range order in covalent amorphous solids 招待有り 査読有り

    M. Ishimaru, A. Hirata, M. Naito

    Nuclear Instruments and Methods in Physics Research B   277   70 - 76   2012年04月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1016/j.nimb.2011.12.054

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  • Growth of higher manganese silicides from amorphous manganese-silicon layers synthesized by ion implantation 査読有り

    M. Naito, R. Nakanishi, N. Machida, T. Shigematsu, M. Ishimaru, J. A. Valdez, K. E. Sickafus

    Nuclear Instruments and Methods in Physics Research B   272   446 - 449   2012年02月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1016/j.nimb.2011.01.120

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  • Self-elongated growth of nanopores in annealed amorphous Ta2O5 films 査読有り

    R. Nakamura, K. Tanaka, M. Ishimaru, K. Sato, T. J. Konno, H. Nakajima

    Scripta Materialia   66   182 - 185   2012年02月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1016/j.scriptamat.2011.10.033

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  • Superlattice-like stacking fault array in ion-irradiated GaN 査読有り

    M. Ishimaru, I. O. Usov, Y. Zhang, W. J. Weber

    Philosophical Magazine Letters   92   49 - 55   2012年01月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1080/09500839.2011.630686

    Scopus

  • Enhancement of nanovoid formation in annealed amorphous Al2O3 including W 査読有り

    R. Nakamura, M. Ishimaru, A. Hirata, K. Sato, M. Tane, H. Kimizuka, T. Shudo, T. J. Konno, H. Nakajima

    Journal of Applied Physics   110   064324(1) - 064324(7)   2011年09月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.3639290

    Scopus

  • Structural characterization of MBE grown InGaGdN/GaN and InGaN/GaGdN structures 査読有り

    D. Krishnamurthy, S. N. M. Tawil, R. Kakimi, M. Ishimaru, S. Emura, Y.-K. Zhou, S. Hasegawa, H. Asahi

    physica status solidi (c)   8   2245 - 2247   2011年08月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1002/pssc.201001024

    Scopus

  • Nanovoid formation by change in amorphous structure through the annealing of amorphous Al2O3 thin films 査読有り

    M. Tane, S. Nakano, R. Nakamura, H. Ogi, M. Ishimaru, H. Kimizuka, H. Nakajima

    Acta Materialia   59   4631 - 4640   2011年06月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1016/j.actamat.2011.04.008

    Scopus

  • Transmission-electron diffraction by MeV electron pulses 査読有り

    Y. Murooka, N. Naruse, S. Sakakihara, M. Ishimaru, J. Yang, K. Tanimura

    Applied Physics Letters   98   251903(1) - 251903(3)   2011年06月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.3602314

    Scopus

  • Effect of vacancy distribution on the thermal conductivity of Ga2Te3 and Ga2Se3 査読有り

    C.-E. Kim, K. Kurosaki, M. Ishimaru, H. Muta, S. Yamanaka

    Journal of Electronic Materials   40   999 - 1004   2011年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1007/s11664-010-1479-7

    Scopus

  • High-temperature thermoelectric properties of Cu2Ga4Te7 with defect zinc-blende structure 査読有り

    T. Plirdpring, K. Kurosaki, A. Kosuga, M. Ishimaru, A. Harnwunggmoung, T. Sugahara, Y. Ohishi, H. Muta, S. Yamanaka

    Applied Physics Letters   98   172104(1) - 172104(3)   2011年04月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.3583662

    Scopus

  • Influence of Si-doping on the characteristics of InGaGdN/GaN MQWs grown by MBE 査読有り

    S. N. M. Twail, D. Krishnamurthy, R. Kakimi, M. Ishimaru, S. Emura, S. Hasegawa, H. Asahi

    physica status solidi (c)   8   491 - 493   2011年02月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1002/pssc.201000484

    Scopus

  • Experimental evidence of homonuclear bonds in amorphous GaN 査読有り

    M. Ishimaru, Y. Zhang, X. Wang, W.-K. Chu, W. J. Weber

    Journal of Applied Physics   109   043512(1) - 043512(4)   2011年02月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.3552987

    Scopus

  • Investigations on the properties of intermittently Gd-doped InGaN structures grown by molecular-beam epitaxy 査読有り

    D. Krishnamurthy, S. N. M. Tawil, R. Kakimi, M. Ishimaru, S. Emura, S. Hasegawa, H. Asahi

    physica status solidi (c)   8   497 - 499   2011年02月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1002/pssc.201000440

    Scopus

  • Nanovoid formation through the annealing of amorphous Al2O3 and WO3 films 査読有り

    R. Nakamura, T. Shudo, A. Hirata, M. Ishimaru, H. Nakajima

    Scripta Materialia   64   197 - 200   2011年01月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1016/j.scriptamat.2010.09.043

    Scopus

  • X-ray photoelectron spectroscopy analysis of TlInGaAsN semiconductor system and their annealing induced structural changes

    K. M. Kim, W.-B. Kim, D. Krishnamurthy, M. Ishimaru, H. Kobayashi, S. Hasegawa, H. Asahi

    Journal of Applied Physics   108   123524(1) - 123524(4)   2010年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.3525979

    Scopus

  • Radiation-induced metastable ordered phase in gallium nitride

    M. Ishimaru

    Applied Physics Letters   96   191908(1) - 191908(3)   2010年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.3430046

    Scopus

  • Direct observations of Ge2Sb2Te5 recording marks in the phase-change disk

    M. Naito, M. Ishimaru, Y. Hirotsu, R. Kojima, N. Yamada

    Journal of Applied Physics   107   103507(1) - 103507(5)   2010年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1063/1.3373419

    Scopus

  • Damage and microstructure evolution in GaN under Au ion irradiation

    Y. Zhang, M. Ishimaru, J. Jagielski, W. Zhang, Z. Zhu, L. V. Saraf, W. Jiang, L. Thome, W. J. Weber

    Journal of Physics D: Applied Physics   43   085303(1) - 085303(9)   2010年03月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

    DOI: 10.1088/0022-3727/43/8/085303

    Scopus

  • Fabrication of Ni quantum cross devices with a 17 nm junction and their current-voltage characteristics

    H. Kaiju, K. Kondo, A. Ono, N. Kawaguchi, J. H. Won, A. Hirata, M. Ishimaru, Y. Hirotsu, A. Ishibashi

    Nanotechnology   21   015301(1) - 015301(6)   2010年01月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Electron microscopy study of L1(0)-FePtCu nanoparticles synthesized at 613K

    Y. Hirotsu, H. W. Ryu, K. Sato, M. Ishimaru

    JOURNAL OF MICROSCOPY   236   94 - 99   2009年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Formation process of β-FeSi2 from amorphous Fe-Si synthesized by ion implantation: Fe concentration dependence

    M. Naito, M. Ishimaru

    JOURNAL OF MICROSCOPY   236   123 - 127   2009年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Effect of periodicity of the two-dimensional vacancy planes on the thermal conductivity of bulk Ga2Te3

    C.-E. Kim, K. Kurosaki, M. Ishimaru, D.-Y. Jung, H. Muta, S. Yamanaka

    physica status solidi (RRL)   3   221 - 223   2009年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Influence of native silicon oxides on the growth of GaN nanorods on Si(001)

    S. Hasegawa, J.-U. Seo, K. Uchida, H. Tambo, H. Kameoka, M. Ishimaru, H. Asahi

    physica status solidi (c)   6   S570 - S573   2009年09月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Specific surface effect on transport properties of NiO/MgO heterostructured nanowires

    K. Oka, T. Yanagida, K. Nagashima, H. Tanaka, S. Seki, Y. Honsho, M. Ishimaru, A. Hirata, T. Kawai

    Applied Physics Letters   95   133110(1) - 133110(3)   2009年09月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Ion-beam-induced chemical disorder in GaN

    M. Ishimaru, Y. Zhang, W. J. Weber

    Journal of Applied Physics   106   053513(1) - 053513(4)   2009年09月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Thermoelectric characterization of (Ga,In)2Te3 with self-assembled two-dimensional vacancy planes

    S. Yamanaka, M. Ishimaru, A. Charoenphakdee, H. Matsumoto, K. Kurosaki

    Journal of Electronic Materials   38   1392 - 1396   2009年07月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • MBE growth and characterization of TlInGaAsN double quantum well structures

    D. Krishnamurthy, S. Shanthi, K. M. Kim, Y. Sakai, M. Ishimaru, S. Hasegawa, H. Asahi

    Journal of Crystal Growth   311   1733 - 1738   2009年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Early stage of the crystallization in amorphous Fe-Si layer: Formation and growth of metastable α-FeSi2

    M. Naito, M. Ishimaru

    Nuclear Instruments and Methods in Physics Research B   267   1290 - 1293   2009年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Transmission electron microscopy study of an electron-beam-induced phase transformation of niobium nitride

    J. H. Won, J. A. Valdez, M. Naito, M. Ishimaru, K. E. Sickafus

    Scripta Materialia   60   799 - 802   2009年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Damage profile and ion distribution of slow heavy ions in compounds

    Y. Zhang, I.-T. Bae, K. Sun, C. M. Wang, M. Ishimaru, Z. Zhu, W. Jiang, W. J. Weber

    Journal of Applied Physics   105   104901(1) - 104901(12)   2009年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures

    M. Ishimaru, Y. Tanaka, S. Hasegawa, H. Asahi, K. Sato, T. J. Konno

    Applied Physics Letters   94   153103(1) - 153103(3)   2009年04月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Ni thin films vacuum-evaporated on polyethylene naphthalate substrates with and without the application of magnetic field

    H. Kaiju, A. Ono, N. Kawaguchi, K. Kondo, A. Ishibashi, J. H. Won, A. Hirata, M. Ishimaru, Y. Hirotsu

    Applied Surface Science   225   3706 - 3712   2009年01月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Electron irradiation-induced phase transformation in α-FeSi2

    M. Naito, M. Ishimaru, J. A. Valdez, K. E. Sickafus

    Journal of Applied Physics   104   073524(1) - 073524(6)   2008年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Direct observations of thermally induced structural changes in amorphous silicon carbide

    M. Ishimaru, A. Hirata, M. Naito, I.-T. Bae, Y. Zhang, W. J. Weber

    Journal of Applied Physics   104   033503(1) - 033503(5)   2008年08月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Unexpectedly low thermal conductivity in natural nanostructured bulk Ga2Te3

    K. Kurosaki, H. Matsumoto, A. Charoenphakdee, S. Yamanaka, M. Ishimaru, Y. Hirotsu

    Applied Physics Letters   93   012101(1) - 012101(3)   2008年07月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Compositional analyses of ion-irradiation-induced phases in δ-Sc4Zr3O12

    K. E. Sickafus, M. Ishimaru, Y. Hirotsu, I. O. Usov, J. A. Valdez, P. Hosemann, A. L. Johnson, H. T. Thao

    Nuclear Instruments and Methods in Physics Research B   266   2892 - 2897   2008年06月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Temperature dependence of electron-beam induced effects in amorphous apatite

    I.-T. Bae, Y. Zhang, W. J. Weber, M. Ishimaru, Y. Hirotsu, M. Higuchi

    Nuclear Instruments and Methods in Physics Research B   266   3037 - 3042   2008年06月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Low temperature thermal annealing-induced α-FeSi2 derived phase in an amorphous Si matrix

    M. Naito, M. Ishimaru, Y. Hirotsu, J. A. Valdez, K. E. Sickafus

    Applied Physics A: Materials Science and Processing   91   353 - 356   2008年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Ionization-induced effects in amorphous apatite at elevated temperatures

    I.-T. Bae, Y. Zhang, W. J. Weber, M. Ishimaru, Y. Hirotsu, M. Higuchi

    Journal of Materials Research   23   962 - 967   2008年04月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Role of the triclinic Al2Fe structure in the formation of the Al5Fe2-approximant

    A. Hirata, Y. Mori, M. Ishimaru, Y. Koyama

    Philosophical Magazine Letters   88   491 - 500   2008年04月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Formation processes of iron silicide nanoparticles studied by ex situ and in situ transmission electron microscopy

    J. H. Won, A. Kovács, M. Naito, M. Ishimaru, Y. Hirotsu

    Journal of Applied Physics   102   103512(1) - 103512(7)   2007年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Ion-beam-induced phase transformations in δ-Sc4Zr3O12

    M. Ishimaru, Y. Hirotsu, M. Tang, J. A. Valdez, K. E. Sickafus

    Journal of Applied Physics   102   063532(1) - 063532(7)   2007年09月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Formation process of sharp-pointed structures on GaN nanorods during RF-MBE growth and their field emission characteristics

    M. Terayama, S. Hasegawa, K. Uchida, M. Ishimaru, Y. Hirotsu, H. Asahi

    physica status solidi (c)   4   2371 - 2374   2007年08月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Surface sputtering in high-dose Fe ion implanted Si

    M. Ishimaru

    Nuclear Instruments and Methods in Physics Research B   258   490 - 492   2007年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Exchange interactions in hydrogen-induced amorphous YFe2 招待有り

    K. Suzuki, K. Ishikawa, K. Aoki, J. M. Cadogan, M. Ishimaru, Y. Hirotsu

    Journal of Non-Crystalline Solids   353   748 - 752   2007年04月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Post-annealing recrystallization and damage recovery process in Fe ion implanted Si

    M. Naito, A. Hirata, M. Ishimaru, Y. Hirotsu

    Nuclear Instruments and Methods in Physics Research B   257   340 - 343   2007年04月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Radiation-induced amorphization resistance and radiation tolerance in structurally related oxides

    K. E. Sickafus, R. W. Grimes, J. A. Valdez, A. Cleave, M. Tang, M. Ishimaru, S. M. Corish, C. R. Stanek, B. P. Uberuaga

    Nature Materials   6   217 - 223   2007年03月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Effect of ionization rates on dynamic recovery processes during electron-beam irradiation of 6H-SiC

    I.-T. Bae, W. J. Weber, M. Ishimaru, Y. Hirotsu

    Applied Physics Letters 90,   90   121910(1) - 121910(3)   2007年03月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Synthesis of iron silicides by electron-beam evaporation: Effects of substrate pre-baking temperature and Fe deposition thickness

    J. H. Won, K. Sato, M. Ishimaru, Y. Hirotsu

    Japanese Journal of Applied Physics   46   732 - 737   2007年02月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Annealing effect on structural defects in low-dose separation-by-implanted-oxygen wafers

    M. Tamura, M. Ishimaru, K. Hinode, K. Tokiguchi, H. Seki, H. Mori

    Japanese Journal of Applied Physics   45   7592 - 7599   2006年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Structural characterization of amorphous Fe-Si and its recrystallized layers

    M. Naito, M. Ishimaru, Y. Hirotsu, J. A. Valdez, K. E. Sickafus

    Nuclear Instruments and Methods in Physics Research B   250   283 - 286   2006年09月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Structural changes of SiC under electron-beam irradiation: Temperature dependence

    I.-T. Bae, M. Ishimaru, Y. Hirotsu

    Nuclear Instruments and Methods in Physics Research B   250   315 - 319   2006年09月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Electron-beam radial distribution analysis of ion-beam-induced amorphous SiC 招待有り

    M. Ishimaru

    Nuclear Instruments and Methods in Physics Research B   250   309 - 314   2006年09月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Structural evolution in Fe ion implanted Si upon thermal annealing

    K. Omae, I.-T. Bae, M. Naito, M. Ishimaru, Y. Hirotsu, J. A. Valdez, K. E. Sickafus

    Nuclear Instruments and Methods in Physics Research B   250   300 - 302   2006年09月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Transmission electron microscopy study on FeSi2 nanoparticles synthesized by electron-beam evaporation

    J. H. Won, K. Sato, M. Ishimaru, Y. Hirotsu

    Journal of Applied Physics   100   014307(1) - 014307(6)   2006年07月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Formation process of β-FeSi2/Si heterostructure in high-dose Fe ion implanted Si

    M. Ishimaru, K. Omae, I.-T. Bae, M. Naito, Y. Hirotsu, J. A. Valdez, K. E. Sickafus

    Journal of Applied Physics   99   113527(1) - 113527(7)   2006年06月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Solid phase crystallization of amorphous Fe-Si layers synthesized by ion implantation

    M. Naito, M. Ishimaru, Y. Hirotsu, J. A. Valdez, K. E. Sickafus

    Applied Physics Letters   88   51904(1) - 51904(3)   2006年06月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Structural characterization of iron silicides nanoparticles grown on Si substrate: Annealing rate dependence

    J. H. Won, K. Sato, M. Ishimaru, Y. Hirotsu

    Journal of Materials Science   41   2611 - 2614   2006年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

  • Structural investigation of Ge-Sb-Sn thin film using transmission electron microscopy

    M. Naito, M. Ishimaru, Y. Hirotsu, M. Takashima, H. Matsumoto

    Journal of Materials Science   41   2615 - 2619   2006年05月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)

▼全件表示

講演

  • Transmission electron microscopy study on crystallization processes of amorphous GeSn

    International Workshop on Advanced Materials and Device Technology  2017年11月 

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    開催期間: 2017年11月22日 - 2017年11月24日   発表言語:英語   講演種別:基調講演  

  • Crystallization processes of amorphous GeSn on thermal annealing

    11th Polish-Japanese Joint Seminar on Micro and Nano Analysis  2016年09月 

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    開催期間: 2016年09月11日 - 2016年09月15日   発表言語:英語   講演種別:特別講演  

  • Radial distribution function analysis of ion-beam-irradiated covalent materials

    47th Annual Meeting of Korean Society of Microscopy “Session: Special International Symposium on Microscopy and Microanalysis of Materials”  2015年11月 

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    開催期間: 2015年11月12日 - 2015年11月13日   発表言語:英語   講演種別:特別講演  

  • Structural changes of nanostructured SiC under radiation environments

    Materials Research Society 2014 Fall Meeting  2014年11月 

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    開催期間: 2014年11月30日 - 2014年12月05日   発表言語:英語   講演種別:特別講演  

  • Radiation-induced amorphization resistance of nanostructured SiC

    10th Japanese-Polish Joint Seminar on Micro and Nano Analysis  2014年10月 

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    開催期間: 2014年10月24日 - 2014年10月26日   発表言語:英語   講演種別:特別講演   開催地:Sapporo, Japan  

  • Electron diffraction study on radiation-induced chemical disorder in covalent materials

    9th Polish-Japanese Joint Seminar on Micro and Nano Analysis  2012年09月 

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    開催期間: 2012年09月11日 - 2012年09月13日   発表言語:英語   講演種別:特別講演   開催地:Sieniawa, Poland  

  • Transmission electron microscopy study on radiation-induced structures in GaN

    2012 International Conference on Defects in Insulating Materials  2012年06月 

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    開催期間: 2012年06月24日 - 2012年06月29日   発表言語:英語   講演種別:特別講演   開催地:Santa Fe, New Mexico, USA  

  • Electron diffraction study on radiation-induced amorphous structures

    International Workshop on Ion Beam Applications of Functional Materials  2011年08月 

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    開催期間: 2011年08月19日 - 2011年08月22日   発表言語:英語   講演種別:特別講演   開催地:Jinan, Shandong, China  

  • Chemical short-range order in amorphous semiconductors

    European Materials Research Society 2011 Spring Meeting  2011年05月 

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    開催期間: 2011年05月09日 - 2011年05月13日   発表言語:英語   講演種別:特別講演   開催地:Nice, France  

  • Radiation-induced amorphous structures in covalent materials

    Materials Research Society 2010 Fall Meeting  2010年11月 

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    開催期間: 2010年11月29日 - 2010年12月03日   発表言語:英語   講演種別:特別講演   開催地:Boston, Massachusetts, USA  

  • Nanoscale phase separation in epitaxially-grown III-V alloys

    8th Japanese-Polish Joint Seminar on Micro and Nano Analysis  2010年09月 

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    開催期間: 2010年09月05日 - 2010年09月08日   発表言語:英語   講演種別:特別講演   開催地:Uji, Kyoto  

  • Transmission electron microscopy study on radiation-induced structures in GaN

    21st International Conference on the Application of Accelerators in Research and Industry  2010年08月 

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    開催期間: 2010年08月08日 - 2010年08月13日   発表言語:英語   講演種別:特別講演   開催地:, Fort Worth, Texas, USA  

  • Structural changes of amorphous SiC during post-implantation thermal annealing

    16th International Conference on Ion Beam Modification of Materials  2008年08月 

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    開催期間: 2008年08月31日 - 2008年09月05日   発表言語:英語   講演種別:特別講演   開催地:Dresden, Germany  

  • Ion beam synthesis of environmental-friendly iron silicides

    3rd Chungnam National University - SANKEN Joint Symposium on Advanced Materials Science  2008年02月 

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    開催期間: 2008年02月27日 - 2008年02月28日   発表言語:英語   講演種別:特別講演   開催地:Daejeon, Korea  

  • Structural characterization of ion-beam-induced amorphous silicon carbide by advanced electron microscopy

    15th International Conference on Surface Modification of Materials by Ion Beams  2007年09月 

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    開催期間: 2007年09月30日 - 2007年10月05日   発表言語:英語   講演種別:特別講演   開催地:Mumbai, India  

  • Amorphization of SiC under radiation environments

    Satellite Conference on Materials Behaviour: Far From Equilibrium  2006年12月 

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    開催期間: 2006年12月15日 - 2006年12月16日   発表言語:英語   講演種別:基調講演   開催地:Mumbai, India  

  • Formation process of β-FeSi2/Si heterostructure in high-dose Fe ion implanted Si

    19th International Conference on the Application of Accelerators in Research and Industry  2006年08月 

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    開催期間: 2006年08月20日 - 2006年08月25日   発表言語:英語   講演種別:特別講演   開催地:Fort Worth, Texas, USA  

▼全件表示

学術関係受賞

  • 公益社団法人日本顕微鏡学会第61回学会賞(瀬藤賞)(応用研究(非生物)部門)

    公益社団法人日本顕微鏡学会   2016年06月

    石丸 学

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    受賞国:日本国

  • 社団法人応用物理学会第6回JJAP(応用物理学会英文誌)編集貢献賞

    社団法人応用物理学会   2008年04月11日

    石丸 学

     詳細を見る

    受賞国:日本国

  • 社団法人日本金属学会第66回功績賞(物性部門)

    社団法人日本金属学会   2008年03月26日

    石丸 学

     詳細を見る

    受賞国:日本国

  • 2007 MRS Fall Meeting Best Poster Award

    Materials Research Society   2007年11月26日

    J. H. Won, A. Kovács, M. Ishimaru, Y. Hirotsu

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    受賞国:日本国

  • 財団法人本多記念会第27回本多記念研究奨励賞

    財団法人本多記念会   2006年05月12日

    石丸 学

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    受賞国:日本国

  • 社団法人日本金属学会第56回金属組織写真賞A部門奨励賞

    社団法人日本金属学会   2006年03月21日

    内藤宗幸,石丸 学,弘津禎彦,高島正樹

     詳細を見る

    受賞国:日本国

  • 社団法人日本顕微鏡学会第6回奨励賞(物質系応用研究部門)

    社団法人日本顕微鏡学会   2005年06月02日

    石丸 学

     詳細を見る

    受賞国:日本国

  • Excellent Poster Award at International Conference on New Frontiers of Process Science and Engineering in Advanced Materials

    High Temperature Society of Japan   2004年11月26日

    J. H. Won, K. Sato, M. Ishimaru, Y. Hirotsu

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    受賞国:日本国

  • 社団法人日本金属学会第6回奨励賞(物性部門)

    社団法人日本金属学会   1996年09月28日

    石丸 学

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    受賞国:日本国

▼全件表示

科研費獲得実績

  • 高レベル放射性廃棄物の処理用コンテナ材料の開発研究

    研究課題番号:25289249  2013年04月 - 2016年03月   基盤研究(B)

  • 自発的ナノスケール相分離とそれを利用した低次元ナノ構造体の創製

    研究課題番号:22560696  2010年04月 - 2013年03月   基盤研究(C)

  • 照射環境下における炭化ケイ素の非晶質化過程と化学的短範囲規則性

    研究課題番号:19560664  2007年04月 - 2009年03月   基盤研究(C)

  • 相変化型光メモリー材料における記録層の非晶質局所構造と結晶化速度の関係

    研究課題番号:16560008  2004年04月 - 2006年03月   基盤研究(C)

担当授業科目(学内)

  • 2021年度   フロンティア工学実習

  • 2021年度   マテリアル工学特論Ⅱ

  • 2021年度   極微構造解析学特論

  • 2021年度   産学連携マテリアル工学プロジェクト

  • 2021年度   マテリアル工学特論Ⅰ

  • 2021年度   外国語文献講読

  • 2021年度   格子欠陥学

  • 2021年度   回折結晶学

  • 2021年度   材料科学特論

  • 2020年度   フロンティア工学実習

  • 2020年度   格子欠陥学

  • 2020年度   回折結晶学

  • 2020年度   専門英語Ⅱ

  • 2020年度   マテリアル工学特論Ⅰ

  • 2020年度   マテリアル工学特論Ⅱ

  • 2020年度   極微構造解析学特論

  • 2020年度   産学連携マテリアル工学プロジェクト

  • 2020年度   外国語文献講読

  • 2019年度   フロンティア工学実習

  • 2019年度   極微構造解析学特論

  • 2019年度   格子欠陥学

  • 2019年度   回折結晶学

  • 2019年度   専門英語Ⅱ

  • 2018年度   フロンティア工学実習

  • 2018年度   計算材料学特論

  • 2018年度   回折結晶学

  • 2018年度   マテリアル工学特論Ⅱ

  • 2018年度   マテリアル工学特論Ⅲ

  • 2018年度   極微構造解析学特論

  • 2018年度   マテリアル工学特論Ⅰ

  • 2018年度   専門英語Ⅱ

  • 2018年度   外国語文献講読

  • 2018年度   格子欠陥学

  • 2017年度   フロンティア工学実習

  • 2017年度   格子欠陥学

  • 2017年度   回折結晶学

  • 2017年度   専門英語Ⅱ

  • 2017年度   材料科学特論

  • 2017年度   極微構造解析学特論

  • 2016年度   フロンティア工学実習

  • 2016年度   格子欠陥学

  • 2016年度   回折結晶学

  • 2016年度   専門英語Ⅱ

  • 2016年度   極微構造解析学特論

  • 2015年度   極微構造解析学特論

  • 2015年度   マテリアル工学特論Ⅲ

  • 2015年度   マテリアル工学特論Ⅱ

  • 2015年度   マテリアル工学特論Ⅰ

  • 2015年度   材料科学特論

  • 2015年度   回折結晶学

  • 2015年度   格子欠陥学

  • 2015年度   外国語文献講読

  • 2015年度   フロンティア工学実習

  • 2014年度   外国語文献講読

  • 2014年度   格子欠陥学

  • 2014年度   マテリアルナノ構造学

  • 2014年度   フロンティア工学実習

  • 2014年度   極微構造解析学特論

  • 2013年度   マテリアルナノ構造学

  • 2013年度   見学実習

  • 2013年度   フロンティア工学実習

  • 2013年度   外国語文献講読

  • 2013年度   極微構造解析学特論

▼全件表示

社会貢献活動(講演会・出前講義等)

  • 電子で見る原子の世界-電子顕微鏡による材料の診断-

    2014年11月04日

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    対象: 高校生

    種別:出前授業

    福岡県立北筑高等学校