論文 - 石丸 学
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Nanovoid formation by change in amorphous structure through the annealing of amorphous Al2O3 thin films 査読有り
M. Tane, S. Nakano, R. Nakamura, H. Ogi, M. Ishimaru, H. Kimizuka, H. Nakajima
Acta Materialia 59 4631 - 4640 2011年06月
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Transmission-electron diffraction by MeV electron pulses 査読有り
Y. Murooka, N. Naruse, S. Sakakihara, M. Ishimaru, J. Yang, K. Tanimura
Applied Physics Letters 98 251903(1) - 251903(3) 2011年06月
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Effect of vacancy distribution on the thermal conductivity of Ga2Te3 and Ga2Se3 査読有り
C.-E. Kim, K. Kurosaki, M. Ishimaru, H. Muta, S. Yamanaka
Journal of Electronic Materials 40 999 - 1004 2011年05月
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High-temperature thermoelectric properties of Cu2Ga4Te7 with defect zinc-blende structure 査読有り
T. Plirdpring, K. Kurosaki, A. Kosuga, M. Ishimaru, A. Harnwunggmoung, T. Sugahara, Y. Ohishi, H. Muta, S. Yamanaka
Applied Physics Letters 98 172104(1) - 172104(3) 2011年04月
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Experimental evidence of homonuclear bonds in amorphous GaN 査読有り
M. Ishimaru, Y. Zhang, X. Wang, W.-K. Chu, W. J. Weber
Journal of Applied Physics 109 043512(1) - 043512(4) 2011年02月
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Influence of Si-doping on the characteristics of InGaGdN/GaN MQWs grown by MBE 査読有り
S. N. M. Twail, D. Krishnamurthy, R. Kakimi, M. Ishimaru, S. Emura, S. Hasegawa, H. Asahi
physica status solidi (c) 8 491 - 493 2011年02月
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Investigations on the properties of intermittently Gd-doped InGaN structures grown by molecular-beam epitaxy 査読有り
D. Krishnamurthy, S. N. M. Tawil, R. Kakimi, M. Ishimaru, S. Emura, S. Hasegawa, H. Asahi
physica status solidi (c) 8 497 - 499 2011年02月
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Nanovoid formation through the annealing of amorphous Al2O3 and WO3 films 査読有り
R. Nakamura, T. Shudo, A. Hirata, M. Ishimaru, H. Nakajima
Scripta Materialia 64 197 - 200 2011年01月
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X-ray photoelectron spectroscopy analysis of TlInGaAsN semiconductor system and their annealing induced structural changes
K. M. Kim, W.-B. Kim, D. Krishnamurthy, M. Ishimaru, H. Kobayashi, S. Hasegawa, H. Asahi
Journal of Applied Physics 108 123524(1) - 123524(4) 2010年12月
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Direct observations of Ge2Sb2Te5 recording marks in the phase-change disk
M. Naito, M. Ishimaru, Y. Hirotsu, R. Kojima, N. Yamada
Journal of Applied Physics 107 103507(1) - 103507(5) 2010年05月
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Radiation-induced metastable ordered phase in gallium nitride
M. Ishimaru
Applied Physics Letters 96 191908(1) - 191908(3) 2010年05月
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Damage and microstructure evolution in GaN under Au ion irradiation
Y. Zhang, M. Ishimaru, J. Jagielski, W. Zhang, Z. Zhu, L. V. Saraf, W. Jiang, L. Thome, W. J. Weber
Journal of Physics D: Applied Physics 43 085303(1) - 085303(9) 2010年03月
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Fabrication of Ni quantum cross devices with a 17 nm junction and their current-voltage characteristics
H. Kaiju, K. Kondo, A. Ono, N. Kawaguchi, J. H. Won, A. Hirata, M. Ishimaru, Y. Hirotsu, A. Ishibashi
Nanotechnology 21 015301(1) - 015301(6) 2010年01月
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Formation process of β-FeSi2 from amorphous Fe-Si synthesized by ion implantation: Fe concentration dependence
M. Naito, M. Ishimaru
JOURNAL OF MICROSCOPY 236 123 - 127 2009年11月
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Electron microscopy study of L1(0)-FePtCu nanoparticles synthesized at 613K
Y. Hirotsu, H. W. Ryu, K. Sato, M. Ishimaru
JOURNAL OF MICROSCOPY 236 94 - 99 2009年11月
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Effect of periodicity of the two-dimensional vacancy planes on the thermal conductivity of bulk Ga2Te3
C.-E. Kim, K. Kurosaki, M. Ishimaru, D.-Y. Jung, H. Muta, S. Yamanaka
physica status solidi (RRL) 3 221 - 223 2009年10月
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Influence of native silicon oxides on the growth of GaN nanorods on Si(001)
S. Hasegawa, J.-U. Seo, K. Uchida, H. Tambo, H. Kameoka, M. Ishimaru, H. Asahi
physica status solidi (c) 6 S570 - S573 2009年09月
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Ion-beam-induced chemical disorder in GaN
M. Ishimaru, Y. Zhang, W. J. Weber
Journal of Applied Physics 106 053513(1) - 053513(4) 2009年09月
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Specific surface effect on transport properties of NiO/MgO heterostructured nanowires
K. Oka, T. Yanagida, K. Nagashima, H. Tanaka, S. Seki, Y. Honsho, M. Ishimaru, A. Hirata, T. Kawai
Applied Physics Letters 95 133110(1) - 133110(3) 2009年09月
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Thermoelectric characterization of (Ga,In)2Te3 with self-assembled two-dimensional vacancy planes
S. Yamanaka, M. Ishimaru, A. Charoenphakdee, H. Matsumoto, K. Kurosaki
Journal of Electronic Materials 38 1392 - 1396 2009年07月