論文 - 石丸 学
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Nanovoid formation through the annealing of amorphous Al2O3 and WO3 films 査読有り
R. Nakamura, T. Shudo, A. Hirata, M. Ishimaru, H. Nakajima
Scripta Materialia 64 197 - 200 2011年01月
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X-ray photoelectron spectroscopy analysis of TlInGaAsN semiconductor system and their annealing induced structural changes
K. M. Kim, W.-B. Kim, D. Krishnamurthy, M. Ishimaru, H. Kobayashi, S. Hasegawa, H. Asahi
Journal of Applied Physics 108 123524(1) - 123524(4) 2010年12月
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Direct observations of Ge2Sb2Te5 recording marks in the phase-change disk
M. Naito, M. Ishimaru, Y. Hirotsu, R. Kojima, N. Yamada
Journal of Applied Physics 107 103507(1) - 103507(5) 2010年05月
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Radiation-induced metastable ordered phase in gallium nitride
M. Ishimaru
Applied Physics Letters 96 191908(1) - 191908(3) 2010年05月
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Damage and microstructure evolution in GaN under Au ion irradiation
Y. Zhang, M. Ishimaru, J. Jagielski, W. Zhang, Z. Zhu, L. V. Saraf, W. Jiang, L. Thome, W. J. Weber
Journal of Physics D: Applied Physics 43 085303(1) - 085303(9) 2010年03月
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Fabrication of Ni quantum cross devices with a 17 nm junction and their current-voltage characteristics
H. Kaiju, K. Kondo, A. Ono, N. Kawaguchi, J. H. Won, A. Hirata, M. Ishimaru, Y. Hirotsu, A. Ishibashi
Nanotechnology 21 015301(1) - 015301(6) 2010年01月
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Electron microscopy study of L1(0)-FePtCu nanoparticles synthesized at 613K
Y. Hirotsu, H. W. Ryu, K. Sato, M. Ishimaru
JOURNAL OF MICROSCOPY 236 94 - 99 2009年11月
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Formation process of β-FeSi2 from amorphous Fe-Si synthesized by ion implantation: Fe concentration dependence
M. Naito, M. Ishimaru
JOURNAL OF MICROSCOPY 236 123 - 127 2009年11月
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Effect of periodicity of the two-dimensional vacancy planes on the thermal conductivity of bulk Ga2Te3
C.-E. Kim, K. Kurosaki, M. Ishimaru, D.-Y. Jung, H. Muta, S. Yamanaka
physica status solidi (RRL) 3 221 - 223 2009年10月
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Specific surface effect on transport properties of NiO/MgO heterostructured nanowires
K. Oka, T. Yanagida, K. Nagashima, H. Tanaka, S. Seki, Y. Honsho, M. Ishimaru, A. Hirata, T. Kawai
Applied Physics Letters 95 133110(1) - 133110(3) 2009年09月
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Influence of native silicon oxides on the growth of GaN nanorods on Si(001)
S. Hasegawa, J.-U. Seo, K. Uchida, H. Tambo, H. Kameoka, M. Ishimaru, H. Asahi
physica status solidi (c) 6 S570 - S573 2009年09月
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Ion-beam-induced chemical disorder in GaN
M. Ishimaru, Y. Zhang, W. J. Weber
Journal of Applied Physics 106 053513(1) - 053513(4) 2009年09月
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Thermoelectric characterization of (Ga,In)2Te3 with self-assembled two-dimensional vacancy planes
S. Yamanaka, M. Ishimaru, A. Charoenphakdee, H. Matsumoto, K. Kurosaki
Journal of Electronic Materials 38 1392 - 1396 2009年07月
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Damage profile and ion distribution of slow heavy ions in compounds
Y. Zhang, I.-T. Bae, K. Sun, C. M. Wang, M. Ishimaru, Z. Zhu, W. Jiang, W. J. Weber
Journal of Applied Physics 105 104901(1) - 104901(12) 2009年05月
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MBE growth and characterization of TlInGaAsN double quantum well structures
D. Krishnamurthy, S. Shanthi, K. M. Kim, Y. Sakai, M. Ishimaru, S. Hasegawa, H. Asahi
Journal of Crystal Growth 311 1733 - 1738 2009年05月
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Transmission electron microscopy study of an electron-beam-induced phase transformation of niobium nitride
J. H. Won, J. A. Valdez, M. Naito, M. Ishimaru, K. E. Sickafus
Scripta Materialia 60 799 - 802 2009年05月
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Early stage of the crystallization in amorphous Fe-Si layer: Formation and growth of metastable α-FeSi2
M. Naito, M. Ishimaru
Nuclear Instruments and Methods in Physics Research B 267 1290 - 1293 2009年05月
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Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures
M. Ishimaru, Y. Tanaka, S. Hasegawa, H. Asahi, K. Sato, T. J. Konno
Applied Physics Letters 94 153103(1) - 153103(3) 2009年04月
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Ni thin films vacuum-evaporated on polyethylene naphthalate substrates with and without the application of magnetic field
H. Kaiju, A. Ono, N. Kawaguchi, K. Kondo, A. Ishibashi, J. H. Won, A. Hirata, M. Ishimaru, Y. Hirotsu
Applied Surface Science 225 3706 - 3712 2009年01月
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Electron irradiation-induced phase transformation in α-FeSi2
M. Naito, M. Ishimaru, J. A. Valdez, K. E. Sickafus
Journal of Applied Physics 104 073524(1) - 073524(6) 2008年10月