HASEGAWA, Kazunori

写真a

Title

Associate Professor

Laboratory

1-1 Sensui-cho, Tobata-ku, Kitakyushu-shi, Fukuoka

Research Fields, Keywords

Power Electronics

Scopus Paper Info  
Total Paper Count: 0  Total Citation Count: 0  h-index: 8

Citation count denotes the number of citations in papers published for a particular year.

Undergraduate Education 【 display / non-display

  • 2007.03   Tokyo Metropolitan University   Faculty of Engineering   Graduated   JAPAN

Post Graduate Education 【 display / non-display

  • 2012.03  Tokyo Institute of Technology  Graduate School, Division of Science and Engineering  Doctoral Program  Completed  JAPAN

Degree 【 display / non-display

  • Tokyo Institute of Technology -  Doctor of Engineering  2012.03

Biography in Kyutech 【 display / non-display

  • 2020.04
    -
    Now

    Kyushu Institute of TechnologyFaculty of Engineering   Department of Electrical Engineering and Electronics   Associate Professor  

  • 2018.04
    -
    2020.03

    Kyushu Institute of TechnologyGraduate School of Life Science and Systems Engineering   Department of Biological Functions Engineering   Associate Professor  

  • 2014.04
    -
    2018.03

    Kyushu Institute of TechnologyGraduate School of Life Science and Systems Engineering   Department of Biological Functions Engineering   Assistant Professor  

  • 2013.04
    -
    2014.03

    Kyushu Institute of TechnologyGraduate School of Life Science and Systems Engineering   Department of Biological Functions and Engineering   Assistant Professor  

Biography before Kyutech 【 display / non-display

  • 2012.06
    -
    2013.03

      Specially Appointed Assistant Professor   JAPAN

  • 2010.04
    -
    2012.03

      JSPS Research Fellow   JAPAN

Academic Society Memberships 【 display / non-display

  • 2006.10
    -
    Now
     

    The Institute of Electrical Engineers of Japan  JAPAN

Specialized Field (scientific research fund) 【 display / non-display

  • Power engineering/Power conversion/Electric machinery

 

Publications (Article) 【 display / non-display

  • Shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction

    Hasegawa K., Abe S., Tsukuda M., Omura I., Ninomiya T.

    Microelectronics Reliability    114   2020.11  [Refereed]

     View Summary

    Attention has been paid to the next-generation IGBT toward CMOS compatible wafer processes, which can be driven by a 5-V logic level due to its low threshold gate voltage. This low threshold voltage makes the so-called shoot-through fault severer. Even though the switching speed of the IGBT is intentionally reduced, the shoot-through fault can happen. This paper presents shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction. Theoretical analysis reveals the criterion of the gate impedance with taking parasitic parameters of the inverter into account.

    DOI Scopus

  • Output-Current Measurement of a PWM Inverter with a Tiny PCB Rogowski Sensor Integrated into an IGBT Module

    Hasegawa K., Sho S., Tsukuda M., Omura I., Ichiki M., Kato T.

    2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019      5707 - 5711   2019.09  [Refereed]

     View Summary

    © 2019 IEEE. Inverters used in motor-drive and grid-connected applications usually employ current sensors at the output terminal because they have to control the output current. Existing current sensors like the Hall sensor and the current transformer are a constraint to reduce the volume and cost of the inverter. This paper proposes an output-current measurement method of a PWM inverter using a tiny PCB sensor that is based on the so-called Rogowski coil and can be integrated into an IGBT module. The method utilizes the switching current of the low-side switch for reproducing the output current, which allows using the PCB sensor because the switching current consists of high-frequency components. The method uses a single PCB sensor per leg and takes the polarity of the output current into account. Experimental results using a half-bridge sinusoidal PWM inverter verify that the proposed method measures the output current including its fundamental frequency component, switching ripple one, and polarity.

    DOI Scopus

  • Analog Basis, Low-Cost Inverter Output Current Sensing with Tiny PCB Coil Implemented inside IPM

    Bayarkhuu B., Bat-Ochir B., Hasegawa K., Tsukuda M., Dugarjav B., Omura I.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs    2019-May   251 - 254   2019.05  [Refereed]

     View Summary

    © 2019 IEEE. This paper proposes a practical current sensor integration in the intelligent power modules (IPMs) using simple PCB Rogowski coil sensors. The PCB sensors produce signals that proportional to the high frequency switching current from high and low side IGBTs. Then with only general-purpose Op-Amps and photo-couplers based integrator and sample and hold (S/H) circuits reproduce output current of the inverter. Specifically, the "envelop tracking" method has successfully proved on an experimental inverter setup. A significant accomplishment of an improved new analog circuit is the measurement during narrow pulse width around unity modulation index that leads to higher inverter output power.

    DOI Scopus

  • Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT

    Tsukuda M., Sudo M., Hasegawa K., Abe S., Saraya T., Takakura T., Fukui M., Itou K., Suzuki S., Takeuchi K., Ninomiya T., Hiramoto T., Omura I.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs    2019-May   339 - 342   2019.05  [Refereed]

     View Summary

    © 2019 IEEE. Negative biasing of the gate voltage in a scaled insulated gate bipolar transistor (IGBT) during the off-state was modeled and found to be effective against self-turn-on failures. The required self-turn-on-free criteria were verified experimentally.

    DOI Scopus

  • Mutual inductance influence to switching speed and TDR measurements for separating self- and mutual inductances in the package

    Iida H., Hasegawa K., Omura I.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs    2019-May   503 - 506   2019.05  [Refereed]

     View Summary

    © 2019 IEEE. Parasitic inductances in power semiconductor packages affect the device switching speeds. The self-inductance of the source terminal has been considered to be the main factor that limits the switching speed, but mutual inductances among the three terminals also influence the speed. This paper proposes a method to measure the source self-inductance and the mutual inductances in the package using time-domain reflectometry (TDR) and time-domain transmissometry (TDT) that reveals the limitation of the switching speed. The measurement results agreed well with those of Q3D simulation.

    DOI Scopus

display all >>

Publications (Books) 【 display / non-display

  • パワーコンバータに用いられるアルミニウム電解コンデンサの 最新評価技術動向

    長谷川一徳 ( Contributor )

    オーム社  2019.10 ISBN: 4910021211094