Assistant Professor


1-1 Sensui-cho, Tobata-ku, Kitakyushu-shi, Fukuoka

Degree 【 display / non-display

  • Kyushu University -  Doctor of Engineering  2015.09

Biography in Kyutech 【 display / non-display

  • 2020.04

    Kyushu Institute of TechnologyFaculty of Engineering   Department of Electrical Engineering and Electronics   Assistant Professor  

  • 2015.10

    Kyushu Institute of TechnologyFrontier Research Academy for Young Researchers   Specially Appointed Assistant Professor  

Academic Society Memberships 【 display / non-display


    The Japan Society of Applied Physics  JAPAN

Specialized Field (scientific research fund) 【 display / non-display

  • Inorganic materials/Physical properties

  • Electronic materials/Electric materials

  • Thin film/Surface and interfacial physical properties


Publications (Article) 【 display / non-display

  • Control of the chemical composition of silicon carbon nitride films formed from hexamethyldisilazane in H<inf>2</inf>/NH<inf>3</inf> mixed gas atmospheres by hot-wire chemical vapor deposition

    Katamune Y., Mori H., Morishita F., Izumi A.

    Thin Solid Films    695   2020.02  [Refereed]

     View Summary

    © 2019 Elsevier B.V. Silicon carbon nitride (SiCN) films were deposited by hot-wire chemical vapor deposition using hexamethyldisilazane (HMDS) as the single source gas diluted in ammonia (NH3) and hydrogen (H2) gas mixtures. The chemical composition of the SiCN films was controlled by adjusting the NH3/H2 flow rate ratio. X-ray photoelectron spectroscopy measurements revealed that the carbon and nitrogen contents of the films were controllable from 10 to 35 at.%, while the silicon content remained almost constant at 45 at.%. Although the homogeneity of the SiCN films deposited using HMDS diluted only with H2 degraded with increasing stage temperature from 400 to 800 °C, it was improved by replacing H2 with NH3. Upon introducing NH3, the nitrogen content increased as carbon content decreased accompanied by the replacement of Si[sbnd]C and C[sbnd]C bonds by Si[sbnd]N, N[sbnd]H, and C[sbnd]H bonds, which led to the deterioration of the mechanical properties of the SiCN films.

    DOI Scopus

  • 熱フィラメントCVD 法による (1 1 1)表面への リンドープn 形ダイヤモンド のホモエピタキシャル成長

    片宗 優貴,森 大地, 和泉 亮,嶋岡 毅紘, 市川 公善,小泉 聡

    NEW DIAMOND    136 ( 36 ) 26 - 28   2020.01

  • Formation of phosphorus-incorporated diamond films by hot-filament chemical vapor deposition using organic phosphorus solutions

    Katamune Y., Arikawa D., Mori D., Izumi A.

    Thin Solid Films    677   28 - 32   2019.05  [Refereed]

     View Summary

    © 2019 Phosphorus-incorporated polycrystalline diamond films were grown on Si substrates by hot-filament chemical vapor deposition using a low-risk organic phosphorus solution as a source gas, similarly to metal-organic chemical vapor deposition. The effects of growth conditions, including stage temperature, and C/H ratio, on the nucleation and crystal growth on Si surfaces, were investigated. We demonstrated that the polycrystalline films with smooth facets are formed at a stage temperature of 700 °C and a C/H ratio of 0.3%. Phosphorus incorporation into the films was confirmed from wavelength dispersive spectrometric measurements equipped with an electron probe microanalyzer.

    DOI Scopus

  • Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films

    Katamune Y., Takeichi S., Ohtani R., Koizumi S., Ikenaga E., Kamitani K., Sugiyama T., Yoshitake T.

    Applied Physics A: Materials Science and Processing    125 ( 5 )   2019.05  [Refereed]

     View Summary

    © 2019, Springer-Verlag GmbH Germany, part of Springer Nature. Boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with boron-blended graphite targets. The effects of boron incorporation on the electrical properties of the films were investigated by hard X-ray photoelectron spectroscopy. Their electrical conductivity increased from 10−7 to 10−1 Ω−1 cm−1 with increasing boron content up to 5 at.%. From the temperature dependence of electrical conductivity, hopping conduction due to localized states produced by boron atoms is predominant in carrier transport. X-ray photoelectron spectra showed the shifts of Fermi levels toward the top of the valence band with increasing boron content. It implies that boron atoms in the films lead to form localized states, which results in enhanced electrical conductivity.

    DOI Scopus

  • Formation of low resistivity layers on singlecrystalline diamond by excimer laser irradiation

    Abubakr E., Zkria A., Katamune Y., Ohmagari S., Imokawa K., Ikenoue H., Yoshitake T.

    Diamond and Related Materials    95   166 - 173   2019.05  [Refereed]

     View Summary

    © 2019 Elsevier B.V. A singlecrystalline diamond (100)(Ib) plate immersed in 2% boric acid was irradiated by 193-nm ArF excimer laser beams for the formation of conductive layers on the surface of an insulating diamond substrate. From current-voltage measurements of the irradiated areas, it was confirmed that semiconducting layers with high conductivities are formed on the diamond surface. It was possible to form ohmic contacts by directly touching tungsten probes with the layer surface. Since Raman spectra exhibited only peaks due to diamond and no peaks due to amorphous carbon, the drastically enhanced conductivity is not attributed to amorphous carbon formation but due to the incorporation of boron atoms into the diamond subsurface from the dopant acid. Secondary ion mass spectrometric depth profile showed the incorporation of boron atoms up to 40 nm depths from the surface. From cathodoluminescence measurements at low temperatures, it was difficult to detect clear peaks for the substitutional incorporation of boron atoms into diamond lattices, which could be attributed to the small thickness of the doped layer for detection. The proposed technique is a new potential method for shallow doping and formation of conductive layers on singlecrystalline diamond surfaces.

    DOI Scopus

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Conference Prsentations (Oral, Poster) 【 display / non-display

  • KrFエキシマレーザー照射による多結晶ダイヤモンド膜表面の平坦化加工

    菊地 俊文,片宗 優貴,吉武 剛,池上 浩

    レーザー学会学術講演会第40回年次大会  (仙台国際センター)  2020.01  -  2020.01 

  • 加熱触媒体によるH2O/H2分解種の生成と金属汚染低減の検討

    福島 和哉,松永 和樹,田原 慎一,片宗 優貴,和泉 亮

    2019年(令和元年度)応用物理学会九州支部学術講演会  (熊本大学工学部 黒髪南地区)  2019.11  -  2019.11 

  • 熱フィラメントCVD法によるリンドープn型(111)ダイヤモンド膜の抵抗率の温度依存性

    森 大地, 片宗 優貴,和泉 亮,有川 大輔,嶋岡 毅紘,市川 公善,小泉 聡

    2019年(令和元年度)応用物理学会九州支部学術講演会  (熊本大学工学部 黒髪南地区)  2019.11  -  2019.11 

  • KrFエキシマレーザーを用いた超硬合金上の多結晶ダイヤモンド膜の表面研磨

    片宗 優貴、村澤 功基、菊地 俊文、吉武 剛、池上 浩

    第33回ダイヤモンドシンポジウム  (東京工業大学 蔵前会館)  2019.11  -  2019.11 

  • 熱フィラメントCVD法により成長したリンドープn型ダイヤモンド膜の電気的特性

    片宗 優貴,森 大地,和泉 亮,嶋岡 毅紘,市川 公善,小泉 聡

    第33回ダイヤモンドシンポジウム  (東京工業大学 蔵前会館)  2019.11  -  2019.11 

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