記述言語：英語   掲載種別：研究論文（学術雑誌）

© 2019 Phosphorus-incorporated polycrystalline diamond films were grown on Si substrates by hot-filament chemical vapor deposition using a low-risk organic phosphorus solution as a source gas, similarly to metal-organic chemical vapor deposition. The effects of growth conditions, including stage temperature, and C/H ratio, on the nucleation and crystal growth on Si surfaces, were investigated. We demonstrated that the polycrystalline films with smooth facets are formed at a stage temperature of 700 °C and a C/H ratio of 0.3%. Phosphorus incorporation into the films was confirmed from wavelength dispersive spectrometric measurements equipped with an electron probe microanalyzer.

DOI： 10.1016/j.tsf.2019.03.006

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記述言語：英語   掲載種別：研究論文（学術雑誌）

© 2019, Springer-Verlag GmbH Germany, part of Springer Nature. Boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with boron-blended graphite targets. The effects of boron incorporation on the electrical properties of the films were investigated by hard X-ray photoelectron spectroscopy. Their electrical conductivity increased from 10−7 to 10−1 Ω−1 cm−1 with increasing boron content up to 5 at.%. From the temperature dependence of electrical conductivity, hopping conduction due to localized states produced by boron atoms is predominant in carrier transport. X-ray photoelectron spectra showed the shifts of Fermi levels toward the top of the valence band with increasing boron content. It implies that boron atoms in the films lead to form localized states, which results in enhanced electrical conductivity.

DOI： 10.1007/s00339-019-2607-8

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記述言語：英語   掲載種別：研究論文（学術雑誌）

© 2019 Elsevier B.V. A singlecrystalline diamond (100)(Ib) plate immersed in 2% boric acid was irradiated by 193-nm ArF excimer laser beams for the formation of conductive layers on the surface of an insulating diamond substrate. From current-voltage measurements of the irradiated areas, it was confirmed that semiconducting layers with high conductivities are formed on the diamond surface. It was possible to form ohmic contacts by directly touching tungsten probes with the layer surface. Since Raman spectra exhibited only peaks due to diamond and no peaks due to amorphous carbon, the drastically enhanced conductivity is not attributed to amorphous carbon formation but due to the incorporation of boron atoms into the diamond subsurface from the dopant acid. Secondary ion mass spectrometric depth profile showed the incorporation of boron atoms up to 40 nm depths from the surface. From cathodoluminescence measurements at low temperatures, it was difficult to detect clear peaks for the substitutional incorporation of boron atoms into diamond lattices, which could be attributed to the small thickness of the doped layer for detection. The proposed technique is a new potential method for shallow doping and formation of conductive layers on singlecrystalline diamond surfaces.

DOI： 10.1016/j.diamond.2019.04.013

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記述言語：英語   掲載種別：研究論文（学術雑誌）

© 2018, The Minerals, Metals & Materials Society. Activated carbon derived from cellulose with added melamine sulfate, which is known as one of the chemicals having a flame-retardant effect on the cellulose, was produced in order to dope dual hetero elements, such as nitrogen and sulfur, and was used to improve the yields of the carbonization process and carbon dioxide (CO 2 ) activation process. The addition of melamine sulfate resulted in suppression of the BET specific surface area. The Brunauer–Emmett–Teller (BET) specific surface area for the CO 2 -activated sample with 30 wt.%-added melamine sulfate was 578 m 2  g −1 . The existence of nitrogen atoms was confirmed in the CO 2 -activated sample with the added melamine sulfate. However, no peak assigned to the sulfur atom appeared in the x-ray photoelectron spectroscopy spectrum for the sample with the 30 wt.%-added melamine sulfate. In spite of the lower specific surface area of the samples containing the added melamine sulfate, the capacitance values of the carbon material derived from the cellulose with added melamine sulfate were higher than those of the carbon material derived only from cellulose.

DOI： 10.1007/s11664-018-6799-z

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記述言語：英語   掲載種別：研究論文（学術雑誌）

© 2018 Korean Physical Society Ultrananocrystalline diamond/hydrogenated amorphous carbon composite films were deposited in the ambient of hydrogen by coaxial arc plasma deposition. The film compositions and chemical bonding structures were investigated by X-ray diffraction, X-ray photoemission and hydrogen forward scattering spectroscopies. The sp 3 /(sp 2 +sp 3 ) ratio and hydrogen content in the film were estimated to be 64% and 35 at.%, respectively. The optical parameters and the optical dispersion profile were determined by using a variable angle spectroscopic ellipsometer at 55° 65° and 75° angle of incidence in the photon energy range of 0.9–5 eV. Combinations of multiple Gaussian, and Tauc-Lorentz or Cody-Lorentz dispersion functions are used to reproduce the experimental data. Results of ellipsometry showed a refractive index of approximately 2.05 (at 2eV) and optical band gap of 1.63 eV. The imaginary part of dielectric function exhibited a peak at 3.8 eV, which has assigned to π-π* electron transitions. Furthermore, Electron spin resonance measurements implied the existence of dangling bonds, which might have a partial contribution to the optical absorption properties of the deposited films. A correlation between optical parameters and structural profile of the deposited films is discussed.

DOI： 10.1016/j.cap.2018.11.012

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記述言語：英語   掲載種別：研究論文（学術雑誌）

© 2018 The Japan Society of Applied Physics. The surface oxidization of Si(100) substrates by oxidizing species generated by the catalytic decomposition of H 2 O precursors on a heated tungsten wire in a mixed H 2 O/H 2 gas atmosphere was investigated. The formation of Si oxide layers was realized at stage temperatures of not more than 350 °C. From X-ray photoelectron spectroscopy measurements, their thicknesses were estimated to be 1-2 nm. In the tungsten wire temperature range from 1000 to 1450 °C, the oxidation of the wire was suppressed at H 2 O/H 2 ratios of not more than 0.2%, which hardly caused tungsten contamination of the oxide layers.

DOI： 10.7567/JJAP.57.120301

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記述言語：英語   掲載種別：研究論文（学術雑誌）

© 2016 Elsevier B.V. Silicon carbon nitride (SiCN) is a candidate as underlayer materials for the growth of diamond thin films for hard coating. Diamond thin films were grown on SiCN layers deposited on Si substrates and directly on the Si substrates for comparison, to investigate the availability of the SiCN underlayers. Both diamond films and SiCN underlayers were deposited by hot filament chemical vapor deposition (HF-CVD). The source gas for the SiCN films deposition was hexamethyldisilazane represented as (CH3)3SiNHSi(CH3)3. The number density of diamond crystallites grown on the SiCN underlayers was low as compared with that of the films deposited on the Si substrate. The number density is not affected by the scratch pretreatment of the SiCN underlayers with diamond powder, which is clearly different from that of the films grown on the pretreated Si substrates. This might be because the SiCN films deposited at low temperatures less than 400 °C cannot keep the surface morphology formed by the scratch treatment under the high-temperature growth condition of the diamond films.

DOI： 10.1016/j.tsf.2016.12.010

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記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

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記述言語：英語   掲載種別：研究論文（学術雑誌）

© 2017 The Japan Society of Applied Physics. Nitrogen-doped ultra-nanocrystalline diamond/hydrogenated amorphous carbon composite films prepared in hydrogen and nitrogen mixed-gas atmospheres by coaxial arc plasma deposition with graphite targets were studied electrically and chemical-bonding-structurally. The electrical conductivity was increased by nitrogen doping, accompanied by the production of n-type conduction. From X-ray photoemission, near-edge X-ray absorption fine-structure, hydrogen forward-scattering, and Fourier transform infrared spectral results, it is expected that hydrogen atoms that terminate diamond grain boundaries will be partially replaced by nitrogen atoms and, consequently, φ C-N and C=N bonds that easily generate free electrons will be formed at grain boundaries.

DOI： 10.7567/APEX.10.015801

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記述言語：英語   掲載種別：研究論文（学術雑誌）

低温酸化プロセスは耐熱温度の低いデバイスの酸化膜形成法として注目されている。本研究では、加熱触媒体を用いてH₂O(g)を分解し、Si基板を低温酸化する方法を提案している。X線光電子分光法を用いて、作製した試料を評価したところ、Si 2pスペクトルにおいてSi-O結合のピークが確認された。酸化処理温度は約60 ºCであり、通常の熱酸化と比べ、極めて低い温度で酸化層の形成が可能であることが示唆された。

DOI： 10.14886/sssj2008.36.0_368

CiNii Article

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記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

© The Electrochemical Society. Ultrananocrystalline diamond/amorphous carbon composite (UNCD/a-C:H) films was deposited by coaxial arc plasma deposition with a graphite target. UNCD/a-C:H films prepared byphysical vapor deposition show large optical absorption coefficients in the photon range from 3 to 5 eV due to disordered structures in a-C:H and grain boundaries. Electron spin resonance measurement indicates the existence of a large number of dangling bonds with a density of ∼1022 cm-3. These dangling bonds might cause the formation of localized states in diamond band gap and contribute to the optical absorption properties specific to the UNCD/a-C:H films.

DOI： 10.1149/07525.0045ecst

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記述言語：英語   掲載種別：研究論文（学術雑誌）

© 2016 The Japan Society of Applied Physics. 3 at. % nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were synthesized by coaxial arc plasma deposition. Optically, the films possess large absorption coefficients of more than 105 cm-1 at photon energies from 3 to 5 eV. The optical band gap was estimated to be 1.28 eV. This value is smaller than that of undoped films, which might be attributable to increased sp2 fractions. The temperature dependence of the electrical conductivity implies that carrier transport follows a hopping conduction model. Heterojunctions with p-type Si substrates exhibited a typical rectifying action. From the capacitance-voltage characteristics that evidently indicated the expansion of a depletion region into the film side, the built-in potential and carrier concentration were estimated to be 0.51 eV and 7.5 × 1016 cm-3, respectively. It was experimentally demonstrated that nitrogen-doped UNCD/a-C:H films are applicable as an n-type semiconductor.

DOI： 10.7567/JJAP.55.07LE01

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記述言語：日本語   掲載種別：記事・総説・解説・論説等（学術雑誌）

記述言語：英語   掲載種別：研究論文（学術雑誌）

© 2015 American Vacuum Society. Boron-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/ a-C:H) films were deposited by coaxial arc plasma deposition with a boron-blended graphite target at a base pressure of <103 Pa and at hydrogen pressures of 53.3 Pa. The hydrogenation effects on the electrical properties of the films were investigated in terms of chemical bonding. Hydrogen-scattering spectrometry showed that the maximum hydrogen content was 35 at. % for the film produced at 53.3-Pa hydrogen pressure. The Fourier-transform infrared spectra showed strong absorptions by sp3 C-H bonds, which were specific to the UNCD/a-C:H, and can be attributed to hydrogen atoms terminating the dangling bonds at ultrananocrystalline diamond grain boundaries. Temperature-dependence of the electrical conductivity showed that the films changed from semimetallic to semiconducting with increasing hydrogen pressure, i.e., with enhanced hydrogenation, probably due to hydrogenation suppressing the formation of graphitic bonds, which are a source of carriers. Carrier transport in semiconducting hydrogenated films can be explained by a variable-range hopping model. The rectifying action of heterojunctions comprising the hydrogenated films and n-type Si substrates implies carrier transport in tunneling.

DOI： 10.1116/1.4931062

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記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

In this paper, we attempt material manipulation of p-type silicon wafers by using dynamic stress with high frequency (called "ultrasonic strain"). A piezoelectric device is used as the source of a time-dependent external field. We have succeeded in manipulating the electrical resistance of a semiconductor p-type silicon wafer with ultrasonic strain with a frequency of 1 MHz. The magnitude of the variation in the electrical resistance was over 2.0 ' 103O and approximately 1.0 ' 103O, corresponding to quadruple and septuple the initial values in the p-type silicon wafers [110] and [100], respectively. The response speed against ultrasonic strain was very fast and was less than 0.2 s, which could yield the basis of a new switching-device mechanism. © 2014 The Japan Society of Applied Physics.

DOI： 10.7567/JJAP.53.07KC07

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記述言語：英語   掲載種別：記事・総説・解説・論説等（学術雑誌）

Carrier transport and photodetection in heterojunction photodiodes comprising n-type Si substrates and p-type B-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were investigated. Their transport model was discussed mainly on the basis of electrical measurements. It was revealed that an a-C:H matrix in UNCD/a-C:H would predominantly be responsible for carrier transportation in the photodiodes. The photodiodes exhibited high external quantum efficiencies of 72 and 23% under 254 and 365nm UV illuminations, respectively. These superior responses might be attributable to the photocarrier generation in UNCD grains accompanied by an efficient carrier transport to the a-C:H matrix. © 2014 The Japan Society of Applied Physics.

DOI： 10.7567/JJAP.53.050307

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記述言語：英語   掲載種別：研究論文（学術雑誌）

Heterojunction diodes, which comprise boron-doped p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films prepared by coaxial arc plasma deposition and n-type Si substrates, were electrically studied. The current-voltage characteristics showed a typical rectification action. An ideality factor of 3.7 in the forward-current implies that carrier transport is accompanied by some processes such as tunneling in addition to the generation-recombination process. From the capacitance-voltage measurements, the built-in potential was estimated to be approximately 0.6 eV, which is in agreement with that in a band diagram prepared on the assumption that carriers are transported in an a-C:H matrix in UNCD/a-C:H. Photodetection for 254 nm monochromatic light, which is predominantly attributable to photocurrents generated in UNCD grains, was evidently confirmed in heterojunctions. Since dangling bonds are detectable by electron spin resonance spectroscopy, their control might be an important key for improving the rectifying action and photodetection performance. © 2013 The Japan Society of Applied Physics.

DOI： 10.7567/JJAP.52.065801

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記述言語：英語   掲載種別：研究論文（学術雑誌）

This paper investigated the effect of chromium underlayer on the structure, microstructure, and composition of the nano-crystalline diamond films. Nano-crystalline diamond thin films were deposited at high temperature in microwave-induced plasma diluted with nitrogen, on single crystal silicon substrate with a thin film of chromium as an underlayer. Characterization of the film was implemented using non-Rutherford backscattering spectrometry, Raman spectroscopy, near-edge x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy. Nanoindentation studies showed that the films deposited on chromium underlayer have higher hardness values compared to those deposited on silicon without an underlayer. Diamond and graphitic phases of the films evaluated by x-ray and optical spectroscopic analyses determined consistency between the sp2 and sp3 phases of carbon in chromium sample to that of diamond grown on silicon. Diffusion of chromium was observed using ion beam analysis which was correlated with the formation of chromium complexes by x-ray diffraction. © 2013 American Institute of Physics.

DOI： 10.1063/1.4774086

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記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

Boron-doped ultrananocrystalline diamond (UNCD)/nonhydrogenated amorphous carbon (a-C) composite (UNCD/a-C) films were prepared by coaxial arc plasma deposition (CAPD) with boron-blended graphite target. Their growth was achieved at room temperature and a base pressure of less than 10?3 Pa (no inflow gas) owing to CAPD, whereas the growth of UNCD films by chemical vapor deposition generally requires high substrate temperatures of more than 700 °C and a hydrogen ambient gas. The formation of p-type conduction was confirmed thermally, namely Seebeck effect, and heterojunction diodes formed with n-type Si exhibited a typical rectifying action. It was demonstrated that CAPD is advantageous to the practical film formation including doping.

DOI： 10.1149/05020.0023ecst

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記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

Boron doped ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition were structurally investigated. With an increase in the boron content, the grain size was increased from 5 to 23 nm accompanying by the lattice constant approaching to that of bulk diamond. The near-edge X-ray absorption fine-structure revealed that boron atoms are preferentially distributed into grain boundaries. On the basis of the results, the roles of the boron atoms in the enhanced crystalline growth are discussed. We consider that the crystalline growth posterior to the nucleation is facilitated by boron atoms existing neighbor to UNCD grains or by boron-containing energetic species in plasma. © 2012 Materials Research Society.

DOI： 10.1557/opl.2012.339

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記述言語：英語   掲載種別：研究論文（学術雑誌）

Boron-doped nanocrystalline diamond/hydrogenated amorphous carbon composite films were prepared by coaxial arc plasma deposition. The Xray diffraction measurement exhibited that the diamond grain size is remarkably increased from 2nm (undoped films) to 82 nm and the lattices of the grains are dilated accompanied by the incorporation of boron atoms into the lattices. The near-edge X-ray absorption fine-structure showed a weak exciton peak of diamond due to the enlarged grains. The enhanced growth mechanism is discussed on the basis of a defect-induced diamond growth model. © 2012 The Japan Society of Applied Physics.

DOI： 10.1143/JJAP.51.078003

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記述言語：英語   掲載種別：研究論文（学術雑誌）

Al-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films were prepared by coaxial arc plasma deposition with an Al-blended graphite target. The grain size estimated from X-ray diffraction peaks was 27 nm; this value is an order of magnitude larger than that of unincorporated films. The appearance of diamond-200 and 222 peaks, which generally disappear due to the extinction rule of diffraction, and the dilation of lattice, implied the incorporation of Al atoms into the lattices. The near-edge X-ray absorption fine-structure showed a sharp exciton peak due to diamond, which is attributed to the enlarged grains. © 2012 The Japan Society of Applied Physics.

DOI： 10.1143/JJAP.51.068002

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記述言語：英語   掲載種別：研究論文（学術雑誌）

Ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon composite films were prepared by pulsed laser deposition with boronblended graphite targets and the effects of the boron-doping on the growth of UNCD grains were investigated. With an increase in the boron content, the grain size was increased from 5 to 23 nm accompanied by the lattice constant approaching that of bulk diamond. The sp 3/(sp 3 + sp 2) ratio estimated from the X-ray photoemission spectra was enhanced by the boron-doping, which might be predominantly attributable to the enlarged grains. The near-edge X-ray absorption fine-structure spectroscopic measurement revealed that boron atoms are preferentially distributed into grain boundaries. On the basis of the results, the roles of the boron atoms in the enhanced crystalline growth are discussed. We consider that the crystalline growth posterior to the nucleation is facilitated by boron atoms neighboring UNCD grains or by boron-containing energetic species in plasma. © 2012 The Japan Society of Applied Physics.

DOI： 10.1143/JJAP.51.025503

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開催期間： 2018年09月03日 - 2018年09月06日   記述言語：英語   開催地：Kitakyushu International Conference Center  

開催期間： 2018年09月03日 - 2018年09月06日   記述言語：英語   開催地：Kitakyushu International Conference Center  

開催期間： 2018年09月03日 - 2018年09月06日   記述言語：英語   開催地：Kitakyushu International Conference Center  

開催期間： 2018年09月03日 - 2018年09月06日   記述言語：英語   開催地：Kitakyushu International Conference Center  

開催期間： 2018年09月03日 - 2018年09月06日   記述言語：英語   開催地：Kitakyushu International Conference Center  

開催期間： 2018年09月03日 - 2018年09月06日   記述言語：英語   開催地：Kitakyushu International Conference Center  

開催期間： 2018年09月03日 - 2018年09月06日   記述言語：英語   開催地：Kitakyushu International Conference Center  

開催期間： 2018年09月03日 - 2018年09月06日   記述言語：英語   開催地：Kitakyushu International Conference Center  

開催期間： 2018年06月09日   記述言語：日本語   開催地：九州工業大学 戸畑キャンパス  

開催期間： 2018年06月09日   記述言語：日本語   開催地：九州工業大学 戸畑キャンパス  

開催期間： 2018年06月09日   記述言語：日本語   開催地：九州工業大学 戸畑キャンパス  

開催期間： 2018年06月09日   記述言語：日本語   開催地：九州工業大学 戸畑キャンパス  

開催期間： 2017年12月03日 - 2017年12月08日   記述言語：英語   開催地：Aqua Kauai Beach Resort, Kauai, Hawaii, USA  

開催期間： 2017年12月01日 - 2017年12月03日   記述言語：日本語   開催地：宮崎観光ホテル  

開催期間： 2017年12月01日 - 2017年12月03日   記述言語：日本語   開催地：宮崎観光ホテル  

開催期間： 2017年12月01日 - 2017年12月03日   記述言語：日本語   開催地：宮崎観光ホテル  

開催期間： 2017年10月29日 - 2017年11月01日   記述言語：英語   開催地：OIST Seaside House  

開催期間： 2017年09月05日 - 2017年09月08日   記述言語：英語   開催地：福岡国際会議場・福岡国際センター・福岡サンパレスホテル  

開催期間： 2017年07月14日 - 2017年07月15日   記述言語：日本語   開催地：リーガホテル　ゼスト高松  

開催期間： 2017年07月14日 - 2017年07月15日   記述言語：日本語   開催地：リーガホテル　ゼスト高松  

開催期間： 2017年06月24日   記述言語：日本語   開催地：佐賀大学本庄キャンパス  

開催期間： 2017年06月24日   記述言語：日本語   開催地：佐賀大学本庄キャンパス  

開催期間： 2016年12月03日 - 2016年12月04日   記述言語：日本語   開催地：長崎県対馬市　対馬市交流センター  

開催期間： 2016年11月29日 - 2016年12月01日   記述言語：日本語   開催地：名古屋国際会議場  

開催期間： 2016年10月02日 - 2016年10月07日   記述言語：英語   開催地：Honolulu, Hawaii  

開催期間： 2016年10月02日 - 2016年10月07日   記述言語：英語   開催地：Honolulu, Hawaii  

開催期間： 2016年09月06日 - 2016年09月09日   記述言語：英語   開催地：Philadelphia, PA, U. S. A  

開催期間： 2016年09月06日 - 2016年09月09日   記述言語：英語   開催地：Philadelphia, PA, U. S. A  

開催期間： 2016年07月08日 - 2016年07月09日   記述言語：日本語   開催地：北見工業大学  

開催期間： 2016年03月16日 - 2016年03月22日   記述言語：日本語   開催地：東京工業大学 大岡山キャンパス  

開催期間： 2015年11月09日   記述言語：日本語   開催地：キャンパス・イノベーションセンター東京1F 国際会議室