Job
Professor
KONO Hiroshi
Scopus Paper Info
Total Paper Count: 30 Total Citation Count: 159 h-index: 7
Degree
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九州工業大学 - 博士（工学） 2022.03
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東北大学 - 博士（理学） 2006.03
Biography in Kyutech
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2026.04
Kyushu Institute of Technology Graduate School of Life Science and Systems Engineering Department of Life Science and Systems Engineering Professor
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2026.02-2026.03
Kyushu Institute of Technology Graduate School of Life Science and Systems Engineering Department of Biological Functions Engineering Professor
Papers
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Thermal Management by Using Small-Area Chips and AI-Based Design Optimization in SiC Modules Reviewed International journal
Ohashi T., Takeda S., Miyake E., Kono H., Iguchi T., Kodani K., Du H., Taguchi Y., Kimura M., Nakagawa H., Iijima R.
Proceedings of the International Symposium on Power Semiconductor Devices and Ics 457 - 460 2025.01
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Impact of Bottom P-Well Grounding Resistance on Unclamped Inductive Switching Ruggedness of SiC Trench MOSFETs Reviewed International journal
Tanaka K., Kusumoto Y., Hasegawa H., Kono H., Sano K.
Proceedings of the International Symposium on Power Semiconductor Devices and Ics 689 - 692 2025.01
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Impact of SBD Embedding into SiC MOSFETs on Dynamic Behavior at High Temperature Reviewed International journal
Asaba S., Furukawa M., Kono H.
Pcim Europe Conference Proceedings 19 - 23 2025.01
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Investigation of Static and Dynamic Behavior of Silicon Carbide Semi-Super-Junction Structure in Schottky Barrier Diodes Reviewed International journal
Kono H., Tanaka K., Kiyosawa T., Sano K.
Proceedings of the International Symposium on Power Semiconductor Devices and Ics 41 - 44 2025.01
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Improving the Surge Current Capability of SiC MOSFETs Under Positive Gate Bias Reviewed International journal
Ohashi T., Kono H., Sakano T., Miyata R., Iijima R.
Proceedings of the International Symposium on Power Semiconductor Devices and Ics 172 - 175 2024.01
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Novel Approach to Mitigate Parasitic Oscillation of Power Modules with Parallel Connected SiC-MOSFETs Reviewed International journal
Takeda S., Miyake E., Kono H., Ohashi T., Iguchi T., Kodani K.
Proceedings of the International Symposium on Power Semiconductor Devices and Ics 514 - 517 2024.01
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Paralleling 3.3-kV/800-A rated SiC-MOSFET Modules: An Optimization Method Reviewed International journal
Irifune H., Hiroshige S., Matsuyama H., Tanaka T., Kono H., Tchouangue G.
Pcim Europe Conference Proceedings 2024-June 2023 - 2030 2024.01
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Impact of Reverse Current Spreading on Diode Conduction Reliability Of SBD-Embedded SiC MOSFET with Deep P-Shield Structure Reviewed International journal
Asaba S., Furukawa M., Kusumoto Y., Iijima R., Kono H.
Proceedings of the International Symposium on Power Semiconductor Devices and Ics 5 - 8 2024.01
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Improved Reliability of a 2200 V SiC MOSFET Module with an Epoxy-Encapsulated Insulated Metal Substrate Reviewed International journal
Kono H., Takeda S., Miyake E., Iguchi T., Ohashi T., Tchouangue G., Kodani K.
Pcim Europe Conference Proceedings 2024-June 2017 - 2022 2024.01
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Performance and reliability improvement trends in silicon carbide power devices Invited Reviewed International journal
Kono H., Ohara R., Suzuki T., Asaba S., Sano K.
Technical Digest International Electron Devices Meeting Iedm 2024.01
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A Novel 2200 V Schottky Barrier Diode-Embedded SiC MOSFET Module Reviewed International journal
Ogata T., Kono H., Irifune H., Fujii S., Tanaka T., Tchouangue G.
Pcim Europe Conference Proceedings 583 - 588 2023.01
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Improvement of Surge Current Capability in SBD-embedded SiC MOSFETs by Introducing Trigger p-n Diodes Reviewed International journal
Ohashi T., Kono H., Asaba S., Hayakawa H., Ogata T., Iijima R.
Proceedings of the International Symposium on Power Semiconductor Devices and Ics 2023-May 242 - 245 2023.01
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Parasitic Oscillation Analysis of Trench IGBT During Short-Circuit Type II Using TCAD-Based Signal Flow Graph Model Reviewed International journal
Kono H., Omura I.
IEEE Transactions on Electron Devices 69 ( 10 ) 5705 - 5712 2022.10
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Clamping Capability of Parasitic p-n Diode in SBD-Embedded SiC MOSFETs Reviewed International journal
Ohashi T., Kono H., Kanie S., Ogata T., Sano K., Hayakawa H., Asaba S., Fukatsu S., Iijima R.
IEEE Transactions on Electron Devices 69 ( 10 ) 5749 - 5754 2022.10
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Improving the VF-IR Trade-Off in 650-V/1200-V SiC SBD by Development of Schottky Metal and Optimization of Device Structure Reviewed International journal
Tanihira K., Hori Y., Yamamoto Y., Adachi Y., Ogata T., Asaba S., Kobayashi M.K., Kono H., Hayakawa H., Tsuyuguchi A., Tchouangue G.
Pcim Europe Conference Proceedings 276 - 281 2022.01
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Design guidelines for SBD integration into SiC-MOSFET breaking RonA - diode conduction capability trade-off Reviewed International journal
Asaba S., Furukawa M., Kusumoto Y., Iijima R., Kono H.
Technical Digest International Electron Devices Meeting Iedm 2022-December 921 - 924 2022.01
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A Study of a parasitic oscillation of trench IGBT in short-circuit mode based on signal flow graph model Reviewed International journal
Kono H., Omura I.
ETG Fachbericht 2022-March ( 165 ) 487 - 492 2022.01
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650-V and 1200-V SiC MOSFETs with Low RonA and Strong Reduction in Switching Losses Reviewed
Furukawa M., Shimizu Y., Tanaka K., Kotani Y., Kobayashi M., Kono H., Hayakawa H., Tchouangue G.
Pcim Europe Conference Proceedings 563 - 568 2022.01
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Improving the specific on-resistance and short-circuit ruggedness tradeoff of 1.2-kV-class SBD-embedded SiC MOSFETs through cell pitch reduction and internal resistance optimization Reviewed International journal
Kono H., Asaba S., Ohashi T., Ogata T., Furukawa M., Sano K., Yamaguchi M., Suzuki H.
Proceedings of the International Symposium on Power Semiconductor Devices and Ics 2021-May 227 - 230 2021.05
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Improved Clamping Capability of Parasitic Body Diode Utilizing New Equivalent Circuit Model of SBD-embedded SiC MOSFET Reviewed
Ohashi T., Kono H., Kanie S., Ogata T., Sano K., Suzuki H., Asaba S., Fukatsu S., Iijima R.
Proceedings of the International Symposium on Power Semiconductor Devices and Ics 2021-May 79 - 82 2021.05
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Study of parasitic oscillation of a multi-chip SiC MOSFET circuit based on a signal flow graph model by TCAD simulation Reviewed International journal
Kono H., Omura I.
Solid State Electronics 177 2021.03
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3.3 kv all sic mosfet module with schottky barrier diode embedded sic mosfet Reviewed
Kono H., Iguchi T., Hirakawa T., Irifune H., Kawano T., Furukawa M., Sano K., Yamaguchi M., Suzuki H., Tchouangue G.
Pcim Europe Conference Proceedings 2021-May 914 - 919 2021.01
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Improved reliability of 1.2kv SIC MOSFET by preventing the intrinsic body diode operation Reviewed International journal
Furukawa M., Kono H., Sano K., Yamaguchi M., Suzuki H., Misao T., Tchouangue G.
Pcim Europe Conference Proceedings 1 1 - 5 2020.01
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Impact of device structure on neutron-induced single-event effect in SIC MOSFETs Reviewed International journal
Kono H., Ohashi T., Noda T., Sano K.
Materials Science Forum 963 MSF 738 - 741 2019.01
Publications (Books)
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Effect of Inserting an Intervening Layer on Φb Reduction in TiN Schottky
Takagi S., Yoshihashi H., Tanaka K., Imamura T., Kono H.（Joint author）
Materials Science Forum 2025.01
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