論文 - 植田 和茂
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Mechanism for Heteroepitaxial Growth of Transparent P-type Semiconductor: LaCuOS by Reactive Solid-State Epitaxy 査読有り
H. Hiramatsu,H. Ohta,T. Suzuki,C. Honjo,Y. Ikuhara,K. Ueda,T. Kamiya,M. Hirano,and H. Hosono
Cryst. Growth Des. 4 301 - 307 2004年04月
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Third-order optical nonlinearity originating from room-temperature exciton in layered compounds LaCuOS and LaCuOSe 査読有り
H. Kamioka,H. Hiramatsu,H. Ohta,M. Hirano,K. Ueda,T. Kamiya,and H. Hosono
Appl. Phys. Lett. 84 879 - 881 2004年04月
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Quantum beat between two excitonic levels split by spin-orbit interactions in the oxychalcogenides LaCuOS 査読有り
H. Kamioka,H. Hiramatsu,M. Hirano,K. Ueda,T. Kamiya and H. Hosono
Opt. Lett. 29 1659 - 1661 2004年04月
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Degenerate electrical conductive and excitonic photoluminescence properties of epitaxial films of wide gap p-type layered oxychalcogenides, LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se) 査読有り
H. Hiramatsu,K. Ueda,T. Takafuji,H. Ohta,T. Kamiya,M. Hirano and H. Hosono
Appl. Phys. A 79 1521 - 1523 2004年04月
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Synthesis of single-phase layered oxychalcogenide La2CdO2Se2: crystal structure, optical and electrical properties 査読有り
H. Hiramatsu,K. Ueda,T. Kamiya,H. Ohta,M. Hirano and H. Hosono
J. Mater. Chem. 14 2946 - 2950 2004年04月
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Heteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy 査読有り
H. Hiramatsu,K. Ueda,T. Takafuji,H. Ohta,T. Kamiya,M. Hirano and H. Hosono
Appl. Phys. A 79 1517 - 1520 2004年04月
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Intrinsic excitonic photoluminescence and band-gap engineering of wide-gap p-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se)semiconductor alloys 査読有り
H. Hiramatsu,K. Ueda,K. Takafuji,H. Ohta,M. Hirano,T. Kamiya,and H. Hosono
J. Appl. Phys. 94 5805 - 5808 2003年04月
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Preparation and crystal structure analysis of CeCuOS 査読有り
K. Ueda,K. Takafuji,and H. Hosono
J. Solid State Chem. 170 182 - 187 2003年04月
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Electrical and Optical Properties and Electronic Structures of LnCuOS (Ln=La~Nd) 査読有り
K. Ueda,K. Takafuji,H. Hiramatsu,H. Ohta,T. Kamiya,M. Hirano,and H. Hosono
Chem. Mater. 15 3692 - 3695 2003年04月
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Wide-gap p-type conductive properties in layered oxychalcogenides 査読有り
K. Ueda,S. Inoue,S. Hirose,H. Kawazoe,and H. Hosono
Mat. Res. Soc. Symp. Proc. 747 V2.1.1 - 11 2003年04月
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Degenerate p-type conductivity in wide-gap LaCuOS1-xSex (x=0-1) epitaxial films 査読有り
H. Hiramatsu,K. Ueda,H. Ohta,M. Hirano,T. Kamiya and H. Hosono
Appl. Phys. Lett. 82 1048 - 1050 2003年04月
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Crystal structure of LaCuOS<sub>1-x</sub>Se<sub>x</sub> oxychalcogenides 査読有り
K. Ueda,and H. Hosono
Thin Solid Films 411 115 - 118 2002年04月
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Bandgap engineering, band edge emission and p-type conductivity in wide-gap LaCuOS<sub>1-x</sub>Se<sub>x</sub> oxychalcogenides 査読有り
K. Ueda,and H. Hosono
J. Appl. Phys. 91 4768 - 4770 2002年04月
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Bipolarigy in electrical conduction of transparent oxide semiconductor CuInO2 with delafossite structure 査読有り
H. Yanagi,K. Ueda,H. Ohta,M. Hirano and H. Hosono
Appl. Phys. Lett. 78 1583 - 1583 2001年04月
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Electrical and optical properties of layered oxysulfides with CuS layers: Sr-Cu-M-O-S system (M=Zn, Ga, In) 査読有り
K. Ueda,S. Hirose,H. Kawazoe and H. Hosono
Chem. Mater. 13 1880 - 1880 2001年04月
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Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition 査読有り
K. Ueda,T. Hase,H. Yanagi,H. Kawazoe,H. Ohta,M. Orita,M. Hirano and H. Hosono
J. Appl. Phys. 89 1790 - 1790 2001年04月
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Room-temperature excitons in wide-gap layered-oxysulfide semiconductor: LaCuOS 査読有り
K. Ueda,S. Inoue,N. Sarukura,M. Hirano and H. Hosono
Appl. Phys. Lett. 78 2333 - 2333 2001年04月
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Electron paramagnetic centers in donor-doped CaTiO<sub>3</sub> single crystals 査読有り
K. Ueda,H. Kawazoe and H. Hosono
Phys. Rev. B 61 7440 - 7440 2000年04月
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Electronic structure and optoelectronic properties of transparent p-type conducting CuAlO<sub>2</sub> 査読有り
H. Yanagi,S. Inoue,K. Ueda,N. Hamada,H. Kawazoe and H. Hosono
J. Appl. Phys. 88 4159 - 4159 2000年04月
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Transparent p-type semiconductor: LaCuOS layered oxysulfide 査読有り
K. Ueda,S. Inoue,S. Hirose,H. Kawazoe,and H. Hosono
Appl. Phys. Lett. 77 2701 - 2701 2000年04月