Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.3390/s22239563

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Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)

<p>Multi-point scanning measurement, which is effective in eliminating motion errors of the stage in on-machine profile measurement, requires multiple displacement sensors of equal pitch to measure displacements simultaneously. However, it is not easy to arrange small sensors with high alignment accuracy when applying the multi-point method at a narrow pitch. In addition, if many sensors can be arranged in parallel, improvement in measurement accuracy can be expected. Therefore, a new micro electro mechanical system (MEMS) device for straightness measurement, one that integrates 10 cantilever displacement sensors, has been proposed. This device can be expected to solve the problem involved in the multi-point method because of the characteristics of MEMS, as the semiconductor processing method can make mechanical structures with high accuracy and it can easily make the device with many identical structures. The device is designed to measure waviness less than 100 μm in height. Ten cantilevers of 11 mm length are fabricated in parallel with 1.8 mm pitch on a side of a base substrate 20 mm square. The strain induced by a displacement of the probe placed near the front edge of the cantilever is detected as a change in the resistance of the piezo resistor at the foot of the cantilever. In the fabrication process of this device, crystal anisotropic etching is performed for 12 hours to form probes 250 μm high. A new fabrication process is also proposed in which a protective process is added to prevent damage to the circuits already formed during the etching. A prototype is investigated, and it is found that the resistance value increases about 0.45% in proportion to the displacement of 100 μm. It is therefore confirmed that this device has the basic ability to detect displacement.</p>

DOI： 10.20965/ijat.2022.p0582

Scopus

CiNii Research

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<p>High-precision positioning can be obtained by reducing sliding friction and securing support rigidity. A prototype of a biaxial positioning table with non-contact drive by magnetic force and flexible mechanism support was developed to meet these requirements. The magnetic poles of a permanent magnet and an electromagnet were placed opposite to each other with an appropriate gap between them, and the attraction force between the two poles was used as the actuator for fine feed. The table was supported with a flexible mechanism composed of metal (A2017) beams with notches and elastic hinges assembled into a square frame shape. The permanent magnets were commercial neodymium magnets, and the electromagnets were self-made of S45C core bars. Two types of attraction force, maximum and minimum, were set depending on the number of neodymium magnets and the magnetic pole gap. The relationship between the applied current and attraction force for each type was calibrated using an electronic balance. Upon increasing and decreasing the applied current to the electromagnets, a linear relationship was shown between them. The relationship between the attraction force and the <i>X</i>- and <i>Y</i>-axes displacements was simulated by finite element analysis. Based on both results, the relationship between the applied current and displacement was estimated. The fine-feed experiment was conducted in both directions of the <i>X</i>- and <i>Y</i>-axes by applying current to electromagnets in a stepwise sequence. The displacements of total strokes in the long-stroke feed on applying the maximum attraction force were 340 μm and 315 μm for the <i>X</i>-axis and 160 μm and 133 μm for the <i>Y</i>-axis. These values are 2.0–2.8 times larger than the estimated displacement. Additionally, 3%–12% of the other axes interference occurred between the <i>X</i>- and <i>Y</i>-axes. In the high resolution feed applying the minimum attraction force, the displacement per step was 75 nm and 78 nm for the <i>X</i>-axis and 35 nm and 39 nm for the <i>Y</i>-axis. Cooperative feed with a combination of long stroke and high resolution was verified to be feasible.</p>

DOI： 10.20965/ijat.2022.p0588

CiNii Research

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2022a.0_28

CiNii Research

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2022s.0_680

CiNii Research

Authorship：Last author,　Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

DOI： 10.1016/j.measen.2021.100358

Kyutacar

Scopus

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JAPAN   Kitakyushu, Fukuoka   2021.11.14  -  2021.11.18

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JAPAN   Kitakyushu, Fukuoka   2021.11.14  -  2021.11.18

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Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2021a.0_154

CiNii Research

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

<p>真直形状測定のための10点同時計測MEMSデバイスをシリコンバルクマイクロマシニング技術により製作した．前報より製作条件を変更することでプロセスの改善を図った．試作デバイスを評価するために各カンチレバー根元のピエゾ抵抗体を1辺とするブリッジ回路を組み，カンチレバー先端に変位を加えて出力電圧の変化を測定した．その結果，変位量に比例して出力電圧が減少し，デバイスが変位検出能を有していることを確認した．</p>

DOI： 10.11522/pscjspe.2021s.0_629

CiNii Article

CiNii Research

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2021s.0_471

CiNii Article

CiNii Research

Authorship：Last author   Language：Japanese   Publishing type：Research paper (conference, symposium, etc.)

DOI： 10.11522/pscjspe.2020s.0_270

CiNii Article

CiNii Research

Authorship：Last author   Language：English   Publishing type：Research paper (international conference proceedings)

Japan   Matsue   2019.11.12  -  2019.11.15

Authorship：Lead author   Language：English   Publishing type：Research paper (international conference proceedings)

Japan   Niigata   2019.09.01  -  2019.09.04

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

<p>摺動摩擦を排除して高精度位置決めを達成するために永久磁石と電磁石を対にした磁気吸引力を利用する微動テーブルを提案している．前報では1軸の装置開発と性能について発表した．今回，1軸装置と同様に吸引力の較正や可撓機構の剛性見積を行って印加電流と変位の関係を予測し，新たに2軸駆動の装置を開発した．X，Y各軸の長ストロークと高分解能および2対の吸引力調整による両者連係での微動性能について報告する．</p>

DOI： 10.11522/pscjspe.2019a.0_351

CiNii Article

CiNii Research

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2019s.0_473

CiNii Article

CiNii Research

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2019s.0_475

CiNii Article

CiNii Research

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2019s.0_728

CiNii Article

CiNii Research

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

<p>In the 5-point method, the straight profile measurement of one line is performed using the sequential three point method, and the relation between the lines is simultaneously measured by two sensors arranged on the next scan line. Using this relation, straightness measurement results of each line, which is acquired by the three-point method, are connected to obtain a planar shape. In order to realize the on-machine measurement by this principle, the authors have prototyped a 5-point MEMS displacement sensor device for measuring a planar shape with five cantilever displacement sensors in a 20 mm square silicon wafer. Each displacement sensor has a probe of a quadrilateral frustum with a height of 250 μm at the tip of the cantilever and detects the strain generated at the root portion as a resistance value change of the piezo resistor according to the displacement. With bulk silicon wafers, when fabricating a probe by etching, they were difficult to control the thickness of the cantilever after etching and the height of the probe according to the target values. Therefore, the authors adopted the Silicon-on-insulator (SOI) wafer to improve dimensional accuracy by using etching stopped at the SiO2 layer. With the fabrication process adopting the SOI wafer, variations in height of the probe are reduced compared with conventional fabrication process using bulk silicon wafer and the size of the tip of the probe can be controlled independently. Therefore, efficiency of fabrication process using the SOI wafer is confirmed.</p>

DOI： 10.1299/jsmekyushu.2019.72.a44

CiNii Article

CiNii Research

Other Link： https://www.jstage.jst.go.jp/article/jsmekyushu/2019.72/0/2019.72_A44/_pdf

Language：Japanese   Publishing type：Research paper (other academic)

<p>Square layout four-point method with angle correction has been proposed as an on-machine profile measurement method of machined flat surfaces. In this method, it is possible to measure the planar shape without the influence of translational error, pitching, and rolling of a stage. However, a zero-adjustment error, which is a deviation of the origin height of the four displacement sensors, causes a large form error of twist shape when the planar shape is reconstructed. To solve this problem, a back calculation method of the zero-adjustment error was proposed: which calculate zero-adjustment error from the difference in the error cumulative amount of two different calculation paths for a square measurement region, the raster scanning path and the diagonal path. To improve the calculation accuracy of zero-adjustment error, the authors have proposed to apply two-point method with angle correction to the diagonal direction by measuring the posture change of the stage unit with the angle sensor newly added in the diagonal direction. Monte Carlo simulations of the square layout four-point method and back calculation of zero-adjustment error were carried out. As a result, it was confirmed that the proposed method is effective to improve correction accuracy of the zero-adjustment error.</p>

DOI： 10.1299/jsmekyushu.2019.72.a43

CiNii Article

CiNii Research

Other Link： https://www.jstage.jst.go.jp/article/jsmekyushu/2019.72/0/2019.72_A43/_pdf

Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.20965/ijat.2018.p0707

Scopus

CiNii Article

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Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2018a.0_494

CiNii Article

CiNii Research

Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

<p>The authors proposed a novel on-machine measurement method for evaluating three-dimensional profiles of machined flat surface: square layout four point (SLFP) method with angle compensation. The SLFP method enables to connect the results of straightness measurements of each scanning line by using additional two sensors and an angle sensor. Numerical simulation showed that the accumulation of zero adjustment error of displacement sensors makes unignorable distortion on the measurement results. Hence, a new calibration method for zero adjustment error was proposed and the validity of the method was confirmed by an experiment.</p>

DOI： 10.1299/jsmelem.2017.9.163

Scopus

CiNii Article

CiNii Research

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Language：Japanese   Publishing type：Research paper (scientific journal)

DOI： 10.1299/transjsme.17-00278

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130006181353

Language：Japanese   Publishing type：Research paper (other academic)

本研究は，広範囲の平面形状測定法として逐次多点法に基づく走査型測定法を提案するものである．本報では，4本の変位センサを正方配置し，2軸の角度補正を併用する測定法について検討した．まず，センサのノイズレベルと測定結果の不確かさの関係をモンテカルロシミュレーションにより確認した．次に単一のセンサに感度差を与え，それに起因する誤差が累積することで測定結果に与える影響を確認した．

DOI： 10.11522/pscjspe.2017s.0_297

CiNii Article

CiNii Research

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2017a.0_727

CiNii Article

CiNii Research

Language：Japanese   Publishing type：Research paper (other academic)

本研究は，等間隔に並べたカンチレバー式高分解能変位センサ3つと，次走査線上に配置したセンサ2つを一体化した多点法平面測定用MEMSデバイスを開発するものである．本デバイスは感度向上のため，応力検出部が存在するカンチレバー根元部に応力集中が効率的に生じるよう，矩形梁の採用と穴形状の付加を行った．本報では改良の定量評価のため行ったFEM解析の結果と，それを元に作製したデバイスについて報告する．

DOI： 10.11522/pscjspe.2017s.0_291

CiNii Article

CiNii Research

Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

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Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.20965/ijat.2015.p0551

Scopus

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

Taiwan   Taipei   2015.09.22  -  2015.09.25

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

Japan   Tsukuba   2014.09.02  -  2014.09.05

Language：Japanese   Publishing type：Research paper (scientific journal)

DOI： 10.1299/transjsme.2014dr0240

CiNii Article

Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)

Language：Japanese   Publishing type：Article, review, commentary, editorial, etc. (scientific journal)

DOI： 10.1299/jsmemag.116.1137_571

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110009635464

Language：Japanese   Publishing type：Research paper (scientific journal)

主要雑誌

Language：English   Publishing type：Research paper (scientific journal)

Kyutacar

Language：Japanese   Publishing type：Research paper (scientific journal)

主要雑誌

Language：English   Publishing type：Research paper (scientific journal)

Language：English   Publishing type：Research paper (scientific journal)

Language：English   Publishing type：Research paper (scientific journal)

Event date： 2015.03.17 - 2015.03.19   Language：Japanese  

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Event date： 2010.03.16 - 2010.03.18   Language：Japanese  

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