担当区分：筆頭著者   記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

Superconductive Assisted Machining Method (SUAM) has been studied for polishing methods inside the hollow structure such as SUS tube. Levitation tool with Nd permanent magnet in the SUAM system is trapped by magnetic flux pinning effect into the superconductor bulk mounted in the liquid nitrogen box. In this case, initial displacement of the levitation tool can be adjusted until 12mm during cooling process under magnetic field. Movement of the superconductor bulk controls the applied force and rotation speed of the levitation tool. In previous research, we demonstrated that the SUAM could be applied lapping and polishing process on concave and flat shapes of the resin, aluminum and SUS materials. In present study, we develop the double magnet system that Nd permanent magnet fixed under the superconductor to increase holding force of the levitation tools. As results, holding force and levitation amount of the double magnet system increase against the conventional single magnet system. We also evaluate dominant parameters such as the placement of the superconductors and magnet flux density distribution from double permanent magnets on the holding force and levitation amount. In this case, the holding force and floating amount is calculated by JMAG using Finite Element Method to compare with the experimental results.

DOI： 10.1115/LEMP2020-8553

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85100921587&origin=inward

担当区分：責任著者   記述言語：日本語   掲載種別：研究論文（学術雑誌）

サファイアなどの難加工材料基板の高効率研磨を実現するため，摩耗特性の異なる材料を用いたポリシングパッドを開発した．ここではポリシングパッド面に耐摩耗性や強度などの機械的特性が高いナイロン繊維と耐摩耗率の低い材料を配列させて，ドレッシングを行うことでナイロン繊維部分に突起形状を形成する．ここでナイロン繊維の配向性や配列を制御できれば，パッド表面にマイクロ突起形状が得られ，安定した研磨性能が期待できる．本研究では本手法で開発されたパッドを形状発現型パッドとし，試作品を用いてサファイア基板をポリシングした．その結果，汎用品パッドのSUBA600より30％程度の材料除去レートの向上が得られたので報告する．

DOI： 10.11420/jsat.62.264

CiNii Research

担当区分：最終著者   記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

Mixed colloidal silica particles as abrasive in slurries have been proposed to improve and realize a high removal rate and smooth surface without subsurface damage, on sapphire chemical mechanical polishing (CMP). Mixed silica particles were fabricated by different sizes of nano-silica particle with the range of pH 7-13. The characteristics of the mixed large and small silica particles has been observed. Dynamic light scattering (DLS) spectra results revealed that the structure of the mixed particle, the small particle at the size of 4 nm are adsorbed on the large silica particles and increase in the size of the abrasive particles. Furthermore, we found that pH value affected to abrasive particle size. In these cases, our polishing tests results show that material removal rate (MRR) of the sapphire CMP totally increase. This confirmed that mixed particles could produce a higher MRR than single colloidal silica slurry. Finally, the mechanism of sapphire removal was discussed.

DOI： 10.1299/jsmelem.2017.9.173

Scopus

CiNii Article

CiNii Research

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85041279621&origin=inward

記述言語：日本語   掲載種別：研究論文（学術雑誌）

水と同等の屈折率を有する透明な樹脂パッドを用いて、スラリー中の微粒子観察やシリコン酸化膜の膜測など、CMPにおけるモニタリング技術に関する研究を行っている。今回は低屈折率の透明樹脂パッドを用いたモニタリング技術のコンセプトと、その足がかりとなる実験データについて報告する。

DOI： 10.11522/pscjspe.2017s.0_523

CiNii Article

CiNii Research

記述言語：日本語   掲載種別：研究論文（学術雑誌）

DOI： 10.2493/jjspe.88.427

CiNii Research

記述言語：日本語   掲載種別：研究論文（学術雑誌）

<p>半導体製造工程における接触・非接触洗浄現象を光学系顕微鏡上で再現し、ナノスケール表面近傍における研磨超微粒子やサブ20 nm金粒子等の剥離・再付着挙動をエバネッセント光によって実時間で観測し、洗浄メカニズムの解明に取り組んできた。本稿では、シリカガラス基板表面に付着した標準シリカ粒子を純水中で観測し、サブ50 nm超微粒子観測ではエバネッセント光場が優位であることを検証した。</p>

DOI： 10.11522/pscjspe.2022s.0_126

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）

Total internal reflection is an optical imaging technique for nanoparticle tracking and observation employing the scattered light from an evanescent field near the interface or reference surface. Generally, the nanoparticle behavior is the three-dimensional Brownian motion in an aqueous medium. The motion can be traced by an optical microscopy, but it cannot be traced by an electron microscopy technique. In the three-dimensional nanoparticle moving position, the X and Y positions are parallel to the surface, which can be traced by the general microscopy techniques. However, the height position Z of a nanoparticle perpendicular to the surface could not be traced without the longitudinal scanning method. Here, a novel method is proposed to investigate the 3D position of nanoparticles by applying multi-wavelength evanescent fields microscopy, which has a high spatial resolution in the Z-direction without longitudinal scanning. This paper focuses on the verification of measurement in the Z-direction. A piezoelectric actuator was employed to control the nanoparticle displacement in height Z. Standard polystyrene 100 nm particles were randomly adhered on a spherical tip that connected with the piezoelectric actuator. The spherical tip was essentially made from an optical adhesive (n = 1.348) with a refractive index close to the water for decreasing the unnecessary signal from the tip-self during nanoparticle observation in the water. The proposed method could obtain the multi-wavelength scattering lights from the observed nanoparticles by an 8-bit color camera with higher than 50 frames per second recording to investigate the 3D nanoscale tracking. The X and Y positions of nanoparticles were determined by the centroid of the scattering light intensities. The height Z was determined from the logarithm ratios between the detected scattering light intensities of both wavelengths. The measurement repeatability of the absolute difference in height between nanoparticles could be measured less than ±16 nm by using the proposed method. The penetration height measur ability range was approximated at 250 nm from the reference surface.

DOI： 10.20965/ijat.2021.p0831

Scopus

CiNii Article

CiNii Research

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85118859497&origin=inward

記述言語：英語   掲載種別：研究論文（学術雑誌）

<p>The nanoscale polishing phenomena between substrate surface, 105 nm-sized SiO₂ particles slurry, and polishing pad during CMP process were experimentally observed and evaluated to identify the main factors which effectively polish a 4H-SiC substrate. The nanoscale polishing phenomena were observed in-situ by our developed compact apparatus applied an optical evanescent field. The observation is able to detect the scattering light from either the nano-abrasive particles or the pad asperities when they react to the surface to being polishing. The nanoparticle motion phenomena, which two conditions (i)only nanoparticles (without pad) and (ii)nanoparticles with pad sliding, on 4H-SiC substrate were observed. According to the observed results, the observed scattering light of nanoparticle on 4H-SiC was the ellipse shape compared with the observing on SiO₂ substrate. Furthermore, we could observe the particles moved nearer and then adhered on the surface. Less particle’s Brownian motion when the particle moved nearer to the surface. In case of nanoparticle with pad sliding, we could observe only the scattering light of pad sliding because the scattering light intensity of particle is quite lower than pad. Therefore, approached nanoparticle to 4H-SiC surface phenomena might be one possible role to explain higher polishing rate CMP parameter.</p>

DOI： 10.11522/pscjspe.2021a.0_102

CiNii Research

記述言語：日本語   掲載種別：研究論文（学術雑誌）

<p>本稿は、被加工SiC表面に付着する直前のナノ・シリカ砥粒の挙動（ブラウン運動にDLVO理論を加え）を数値解析を行ない、その被加工表面に局在させたエバネッセント光場で観測した結果と比較したので報告する。約100nmのシリカ粒子がSiC基板表面から100nm以内の距離で付着・近接して運動する際は、間欠的にわずかに振動して留まるように振る舞う可能性があった。</p>

DOI： 10.11522/pscjspe.2021a.0_126

CiNii Research

記述言語：日本語   掲載種別：研究論文（学術雑誌）

<p>半導体製造工程における接触・非接触洗浄現象を光学系顕微鏡上で再現し、平板近傍における超微粒子の研磨ナノ粒子や金粒子等の剥離挙動をエバネッセント光によって実時間で観測し、洗浄現象のメカニズム解明を行ってきた。本稿では、シリカガラス表面に付着・静止したシリカ粒子径と散乱光強度特性を調べ、Wet洗浄中におけるシリカナノ粒子挙動を実時間観察したので報告する。</p>

DOI： 10.11522/pscjspe.2021a.0_113

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）

<p>An abrasive nanoparticle behavior in chemical mechanical polishing (CMP) process is a three-dimensional (3D) motion near a substrate or reference surface. The height position is a longitudinal distance between the reference surface and nanoparticle, which is a challenge for measuring the height position in a wet condition. Our previous report could estimate the relative height of polystyrene 100 nm particles by applying multi-wavelength evanescent fields, but the absolute height was not confirmed yet. Therefore, in this report, we proposed a design concept for absolute height verification by using the developed nano-step height patterns. The nano-step height was approximately less than hundred nanometers from the reference surface. The nano-step height made from an optical resin that has a refractive index close to water to decrease the scattering light during observing nanoparticles in water. Polystyrene 100 nm particles on the nano-step height were used to estimate the absolute height of nanoparticle. The proposed concept could be used to verify the nanoparticle's absolute height in water, which can be applied to clarify the nanoparticle phenomena during the CMP process in the near future.</p>

DOI： 10.11522/pscjspe.2021a.0_588

CiNii Research

記述言語：日本語   掲載種別：研究論文（学術雑誌）

<p>半導体製造中の接触・非接触洗浄工程を光学系顕微鏡上で再現し，表面近傍における研磨ナノ粒子挙動をエバネッセント光によって実時間で観測することにより，現象の解明を試みてきた．本稿では，シリカガラス表面に付着した50nm以下の金粒子径を精度よく見積もり可能であることを実証した上で，超音波照射中に液中で発生し表面に接近した気泡雲によって 20nm金粒子が剥離・再付着された挙動を1000fpsで可視化し，現象を分類したので報告する．</p>

DOI： 10.11522/pscjspe.2021s.0_314

CiNii Article

CiNii Research

記述言語：日本語   掲載種別：研究論文（学術雑誌）

<p>Cleaning phenomena in semiconductor manufacturing is about the nanoparticles being removed out from, or re-adhering to, or returning to the wafer surface. However, these residual nanoparticles from polishing slurry on the wafer are usually inspected before-and-after cleaning process, not during the wet cleaning process. Accordingly, these cleaning phenomena mechanism on the surface have already not clearly known. Therefore, we have been establishing dynamically visualization of wet cleaning phenomena on the surface applying localized light called evanescent light that is generated by an optically internal reflection. This report introduces some of observed physical characteristical phenomena during duplicated scrub cleaning process of 10 and 30 nm gold particles by PVA brushes without and with skin layer, which have different contact area ratio on the surface being cleaned.</p>

DOI： 10.1299/jsmekanto.2021.27.10a02

CiNii Article

CiNii Research

その他リンク： https://www.jstage.jst.go.jp/article/jsmekanto/2021.27/0/2021.27_10A02/_pdf

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

Chemical-Mechanical Polishing (CMP) process has emerged as the method of choice for planarization in the semiconductor industry. The interaction force between the surface being polished and the abrasive nanoparticles plays a significant role in flattening the substrate surface in the CMP process. For example, when the SiO2 nanoparticle is distant from the SiC substrate surface, the interaction force between the surface and the nanoparticles is presented. This force could be analysed using Derjaguin and Landau and Verwey and Overbeek (DLVO) theory and particle Brownian motion. According to the simulation results, we found that very fine abrasive nanoparticle such as smaller than approximately 10 nm is comparatively approach to the surface being polished more certainly.

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85124800184&origin=inward

記述言語：英語   掲載種別：研究論文（学術雑誌）

<p>Chemical-Mechanical Polishing (CMP) process has emerged as the method of choice for planarization in the semiconductor industry. The interaction force between the surface being polished and the abrasive nanoparticles plays a significant role in flattening the substrate surface in the CMP process. For example, when the SiO₂ nanoparticle is distant from the SiC substrate surface, the interaction force between the surface and the nanoparticles is presented. This force could be analysed using Derjaguin and Landau and Verwey and Overbeek (DLVO) theory and particle Brownian motion. According to the simulation results, we found that very fine abrasive nanoparticle such as smaller than approximately 10 nm is comparatively approach to the surface being polished more certainly.</p>

DOI： 10.1299/jsmelem.2021.10.178-171

CiNii Research

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

<p>This study used a water-soluble inclusion complex, fullerene/β-cyclodextrins(C₆₀/β-CDs), as additive abrasive with conventional SiO₂ slurry for the chemical mechanical polishing/planarization(CMP) of the silicon carbide substrate wafer. The hydrodynamic size(<i>d_H</i>) of C₆₀/β-CDs suspension was measured by the dynamic light scattering(DLS) method; the appearance of a C₆₀/β-CDs inclusion complex is observed by TEM. The C₆₀/β-CDs hybrid SiO₂-based slurry performed a higher removal rate than conventional SiO₂ slurry, and the polished surface showed a lower depression and roughness, too.</p>

DOI： 10.1299/jsmelem.2021.10.094-114

CiNii Research

担当区分：責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）

Superconductive-assisted machining (SUAM) is a polishing method that employs a magnetic levitation tool, which is based on a superconductive phenomenon called the pinning effect. Since the tool magnetically levitates, the issue of tool interference is eliminated. In this study, in order to set up the polishing conditions of the magnetic levitation tool, we evaluated the relation between the flux density distribution relative to the tool position and the holding force acting on the magnetic levitation tool to maintain its initial position, set by field cooling by the superconducting bulk. For the holding force, we measured the attractive, repulsive, restoring, and driving forces. We found that the greater the holding force, the smaller the initial distance between the superconducting bulk and the magnetic levitation tool. The attractive force was found to peak when the levitated tool was displaced 6 mm from an initial position of 9 mm from the bulk, and it became only the self-weight of the magnetic levitation tool at displacements of 30 mm and above, where the pinning effect broke down. We then evaluated the polishing characteristics for SUS304 and A1100P at a tool displacement that results in the maximum attractive force. In the polishing experiment, we employed a water-based diamond slurry because the temperature of the workpiece was close to room temperature. We found that it was possible to polish SUS304 and A1100P while avoiding the effects of magnetization due to the polishing pressure or induced currents that accompany the rotation of the metal plate. The arithmetic average roughness, Ra, of A1100P was relatively high due to the effect of scratches, while that of SUS304 improved from 92 nm before polishing to 55 nm after polishing when polished with grains with a diameter of 1 μm.

DOI： 10.20965/IJAT.2021.P0234

Scopus

CiNii Article

CiNii Research

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85102894272&origin=inward

記述言語：英語   掲載種別：研究論文（学術雑誌）

© 2020 IOP Publishing Ltd. The nanoparticle phenomena concern three-dimensional motion in a fluid in which the nanoparticles move at ultra-high-speed with Brownian motion. However, current commercial methods for nanoparticle position tracking are only able to determine a two-dimensional position, and are not able to define the longitudinal axis Z as the third dimension. We have therefore proposed a method and have observed the three-dimensional tracking of individual nanoparticles with nanometer localisation precision and high temporal resolution. In this paper, 100 nm polystyrene standard particles were used to investigate our three-dimensional tracking method. Evanescent fields have been used to obtain a scattering light from the observed particle near the reference surface. The single wavelength could determine the localisation tracking of the X, Y coordinates, but was not available for tracking the height Z, because the particle size is usually unknown. Thus, we have employed multi-wavelength evanescent fields to achieve higher localisation tracking of the height Z. The X, Y coordinates of an individual nanoparticle were determined by the centre of mass of the scattering light intensities, and the height Z was evaluated from the detected scattering light intensities, then plotted with an exponential relationship. The penetration height ability of our method was approximately 250 nm from the reference surface (Z = 0). The outcomes of this study can provide information explaining some of the phenomena during nanoscale processes on a surface, such as in a semiconductor wet process.

DOI： 10.1088/1361-6501/ab87ec

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85087182536&origin=inward

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

© Published under licence by IOP Publishing Ltd. In the present study, we numerically calculated the magnetic levitation force for superconductor assisted machining (SUAM) using the finite element method. Although we usually use bulk superconductors for magnetic levitation in SUAM, we herein considered magnetic levitation using superconductor-coated conductors. We were able to explain the experimental results on the forces of the coated conductors as well as bulk theoretically. For both bulk and coated conductor, the repulsive force was found to increase as the distance from the permanent magnet became shorter. For the coated materials, both the repulsive and attractive forces were lower than in the case of bulk superconductors. This is because the volume of superconducting material was smaller than in the case of bulk superconductors, since the overall size of both materials was the same. However, we believe that greater forces can be obtained by increasing the number of coated conductors.

DOI： 10.1088/1742-6596/1590/1/012023

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85090030974&origin=inward

担当区分：最終著者   記述言語：英語   掲載種別：研究論文（学術雑誌）

© 2020 The Japan Society of Applied Physics. This study investigated the behavior of water-soluble inclusion complexes (fullerene/β-cyclodextrin, C60/β-CD) as solid-state reacted abrasive particles for chemical-mechanical planarization (CMP) of 4H-SiC substrates. The size of C60/β-CD was measured by dynamic light scattering. The material removal rate with the aid of C60/β-CD was increased by 49%. Also, the indentation hardness and wettability were examined for the transition area by mechanochemical reaction. According to the decreasing hardness and contact angle, an adlayer consisting of C60/β-CD was indented by a Berkovich indenter against the substrate. Thus, the removal mechanism of advanced CMP among SiC substrates, C60/β-CD, and SiO2 abrasives is theoretically proposed.

DOI： 10.35848/1347-4065/ab8c9b

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85085659395&origin=inward

記述言語：日本語   掲載種別：研究論文（学術雑誌）

<p>Cleaning phenomena in semiconductor manufacturing is about the nano-contamination being repelled out from, or adhering to, the wafer surface. However, residual contamination on the wafer has been usually inspected only before and after cleaning process, not during wet cleaning process. Therefore, these cleaning phenomena mechanism on the surface have not already clearly known. We have been establishing dynamically visualization of wet cleaning phenomena on the surface applying localized light called evanescent light generated by internal reflection. This article introduces some of observed physical phenomena during duplicated cleaning process in both contact cleaning by a PVA brush and non-contact cleaning by mega-sonic wave.</p>

DOI： 10.1299/jsmekanto.2020.17e02

CiNii Article

CiNii Research

その他リンク： https://www.jstage.jst.go.jp/article/jsmekanto/2020/0/2020_17E02/_pdf

記述言語：英語   掲載種別：研究論文（学術雑誌）

<p>This paper reports development of an optical apparatus for Real-time observation during chemical reactions in Nano-scale process on surface such as CMP (Chemical-Mechanical polishing) and catalysis by applying in evanescent field. Beside using evanescent field to observe Nano-particles in physical aspects, the developed Raman spectroscopy apparatus aims to observe chemical aspects during reactions on processing surface. Changes in Raman scattering spectrum is expected to understand chemical reactions on the processing surface. In this report, the 532 nm wavelength laser source will be used to generate evanescent field. A rotation stage of diffraction grating and a translation stage will used to optimize the Raman spectrum data.</p>

DOI： 10.11522/pscjspe.2020S.0_622

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007896772

記述言語：英語   掲載種別：研究論文（学術雑誌）

<p>The nanoscale polishing phenomena between the substrate surface and polishing pad during process, such as CMP process, were observed and evaluated, in this report. The concept of observation method is applied the generated evanescent field to limit the observable region only on the surface being polished, and the detectable scattering light from the nanoparticles and polishing pad when they move close to the surface in a range of evanescent field. The detected scattering light intensity could be used for evaluating the phenomena. According to the observed results, there should have been more than two different phenomena in polishing; the particles adhering on the polishing pad, and the individual movement particles during moving. However, the phenomena being able to perform polishing, could not clearly identify yet.</p>

DOI： 10.11522/pscjspe.2020S.0_658

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007896847

記述言語：英語   掲載種別：研究論文（学術雑誌）

<p>The nanoscale phenomena, such as chemical mechanical polishing (CMP) process, present near the surface. A three-dimensional nanoparticle tracking could explain the phenomena that happen in the polishing process. From our previous report, we have investigated the three-dimensional motion of an individual standard nanoparticle by using optical method, but the height Z on the third dimension was not accurately verified. In this report, the sub-100 nm individual nanoparticles were fixed on the tip which the tip was connected to the piezo actuator for controlling the height Z displacement. The multi-wavelength evanescent fields with optical microscopy system is also applied in the experiment for three-dimensional nanoparticle tracking. The scattering light from nanoparticle will exponentially increase when the nanoparticle on the tip was downward moved close to the reference surface. Finally, The height Z uncertainty could be measured approximately ±25 nm and the penetration height measurability were 200 nm far from the reference surface. We could three-dimensionally track the individual standard nanoparticle in recording speed higher than 50 frames per second for exposure time less than 10 milliseconds.</p>

DOI： 10.11522/pscjspe.2020S.0_588

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007896683

記述言語：英語   掲載種別：研究論文（学術雑誌）

<p>半導体製造工程で重大な欠陥となるウェハ表面残留研磨ナノ粒子(φ100 nm以下)の洗浄現象が未だ解明されていない．そこで，表面近傍でのナノ粒子離脱・再付着挙動をエバネッセント光によって実時間観察する手法が確立されてきた．これまで，PVAブラシによる接触洗浄現象の観察を行ってきた．本稿では，予めナノ・シリカ粒子(φ100 nm以下)を付着させた酸化・窒化膜のガラス基板表面を用意し，洗浄液中において2MHzの超音波を照射することで非接触洗浄現象を再現した．その可視化した結果を報告する．</p>

DOI： 10.11522/pscjspe.2020S.0_660

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007896839

記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）

<p>本研究では粒径が数十nm〜百nm程度の粒子径を持つダイヤモンドなどコア粒子上にフラーレン分子を吸着させ，紫外線照射のほかに，マイクロ波合成法を併用させることでフラーレンを新規炭素同素体へ物質変換を行い，研磨微粒子上に安定化した数nmレベルの機能性炭素層を形成する．ここでは形成された新規炭素同素体の分類を行うとともに難加工基板に対する研磨性能の影響について評価する．</p>

DOI： 10.11522/pscjspe.2020S.0_486

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007896718

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

Copyright © Proceedings of the 20th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2020. All rights reserved. To understand the nanoparticle motion behaviours on a surface, we have studied to investigate the three-dimension tracking of an individual nanoparticle with nanometre localisation accuracy. In three-dimensional nanoparticle moving position, the X and Y coordinates are on the parallel plane to the surface, which their coordinates can be tracked in general microscopy. However, the Z coordinate is the nanoparticle height position perpendicularly to the surface plane, which could not be generally tracked without longitudinal scanning method. In this paper, the polystyrene 100 nm standard particles were used to investigate the three-dimensional tracking. The individual standard nanoparticles were fixed on the tip, which was vertically travelled with the piezo actuator for movement control on the third dimension to verify the actual height Z. Our developed optical microscopy apparatus has been applying multi-wavelength evanescent fields, and obtaining multi scattering light intensities from the observed nanoparticles near to surface. Commonly, the X and Y coordinates of nanoparticle were determined by the centre of mass of each scattering light intensity. The height Z was investigated from the integration of the detected scattering intensities of each wavelength. By using our method, the height Z uncertainty could be measured approximately less than ±20 nm, and the penetration height measurability was approximately 250 nm far from the reference surface. Consequently, we could three-dimensionally track the individual standard nanoparticle in recording speed higher than 50 frames per second.

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85091559647&origin=inward

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

© 2018 IEEE. Chemical Mechanical Polishing (CMP) of silicon wafer is indispensable for providing the substrate used in manufacturing of semiconductor device. However, the CMP process has many parameters, such as polishing pressure, platen/carrier rotational speed, polishing pad characteristics, chemical solution/abrasive in polishing slurry. In these parameters, abrasive particles in the slurry have both mechanical and chemical actions. To enhance the CMP process efficiency, we have been studied the relationship between the Material Removal Amount (MRA) and the increase of abrasive particle size during CMP. In this report, the colloidal silica abrasive nanoparticle sizes of 20 nm and 55 nm were used for polishing the Silicon wafers by a CMP machine, which is installed a slurry pool. A dynamic light scattering (DLS) spectra measures the increase in abrasive nanoparticle sizes. The silicon particle size after CMP process were direct proportion with MRA of Si-wafer was polished.

DOI： 10.1109/ESIT.2018.8665198

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85064232763&origin=inward

記述言語：英語   掲載種別：研究論文（学術雑誌）

© The Electrochemical Society. Cleaning phenomenon is considered as nano-particle behaviors near the surface in nano-scale. The phenomenon concerns the removal of the nano-particle from the wafer surface to be cleaned, and the occasional reattachment of the nano-particle to surface in Post-CMP cleaning process. However, residual contamination on the wafer has been usually inspected only before and after cleaning process. Therefore, removal and reattachment mechanism of nano-particles on the surface have not already clearly known. Hence, we have been establishing dynamically visualization of cleaning phenomena on the surface applying localized light called evanescent light generated by internal reflection. In this article, we discuss the validity of our proposed optical method to observe nano-particle removal during PVA brush scrubbing in real time, by demonstrating removal of 100 nm fluorescent silica-nano-particles from a glass surface. Consequently, the mutual scrubbing behavior between nano-particles and PVA brush would be identified by fluorescent and non-fluorescent wavelength scattering light.

DOI： 10.1149/09202.0191ecst

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85077135546&origin=inward

記述言語：英語   掲載種別：研究論文（その他学術会議資料等）

<p>Chemical mechanical polishing (CMP) is an essential process in the manufacturing of sapphire substrate that needs to achieve a smooth planar surface without subsurface damage. Definitely, the polishing pad is one of the dominant factors in the polishing. In recent years, there are trends to decrease the synthases material that formed by chemical production for our world environment. The organic fibers are having uniform structure, easy to fabricate from the natural or waste product from agro-industry or food industry, and can be control the diameter from micro unit until nano size such as cellulose nanofibers. This study aims to developed polishing pad with organic polishing pad from the several kinds of fibers such as; bamboo, sugarcane bagasse, banana, and pineapple fibers. As a result, naturally SiO₂-contained fiber types that were bamboo and bagasse, performed considerably higher material removal rate (MRR) more than a conventional pad by 157% and 191% respectively. On the other hand, none-SiO₂ fiber type (banana, pineapple) did not perform MRR completely. Therefore, we conclude that the SiO₂ in the organic fibers could improve a material removal rate of sapphire CMP.</p>

DOI： 10.11522/pscjspe.2019A.0_18

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007800812

記述言語：英語   掲載種別：研究論文（その他学術会議資料等）

<p>In this paper, the performance evaluation of developed in-situ apparatus for real-time observation were studied. The apparatus could observe the nanoparticles phenomena on surface between substrate and polishing pad that is essential to improve the Material Removal Rate (MRR) of the substrate during Chemical Mechanical Polishing (CMP) process. We propose the single wavelength by applying an evanescent field in order to observe the nanoparticles phenomena. The experimental condition were separated into two experiments, as different size (sub 10 nm and 105 nm) silica slurry ( 5 wt% with pH 10.5) with pure water (pH 10.5). According to the experimental result, the our apparatus could detect the scattering light intensity of pure water and silica slurry during polishing process. The silica slurry are higher scattering light intensity than pure water, and sub 10 nm silica slurry is highest intensity.</p>

DOI： 10.1299/jsmekyushu.2019.72.A42

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007801889

記述言語：英語   掲載種別：研究論文（その他学術会議資料等）

<p>The nanoparticle is popularly used for chemical mechanical polishing process (CMP) in semiconductor industry. There are many unknown phenomena in nanoparticles moving during polishing process. Therefore, we have been studying the phenomena by using optical method on 3D position tracking of nanoparticle in real-time measurement. In this report, the gold 50 nm standard particles would be observed to determine the 3D motion tracking of individual nanoparticle. According to our previous studies, the single wavelength of evanescent light field is hard to determine the 3D spatial position of each nanoparticle. Thus, the multi-wavelength of scattering light is applied in the experiment. The scattering light will occur when the particle moving near to the reference surface. Finally, the 3D position tracking results of standard nanoparticle will be investigated and discussed by the exponential relationships between the detected scattering light and the measured depth Z values.</p>

DOI： 10.11522/pscjspe.2019S.0_459

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007702561

記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）

<p>工具の小径化に伴い工具長の高い検出精度を持った非接触式ツールセッタが求められている．現在，一般的なものは幾何光学に基づくため精度は数μmまでである．そこで本研究では，数百nmの精度を持つ近接場光を応用した工具刃先測定手法を提案している．その際，様々な刃先形状や材質の散乱光特性を把握するために数値シミュレーションを用いている．本稿では，数値シミュレーションを用いて工具刃先からの散乱光特性を評価した．</p>

DOI： 10.11522/pscjspe.2019S.0_904

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007702849

記述言語：日本語   掲載種別：研究論文（研究会，シンポジウム資料等）

The manufacturing process of the transparent pad was developed by the thermal imprint method equipped with a special jig for controlling the thickness, pattern and electrode structure. Particle behavior is controlled by the electric field using a wire mesh inserted into a low index transparent polishing pad. As a result, the movement of hybrid particles of diamond particles and silica particles can be observed in an electric field using a digital microscope. Furthermore, in the polishing experiment, it was possible to obtain a higher amount of material removal in the presence of the electric field than in the absence of the electric field.

DOI： 10.1299/jsmemmt.2019.13.D39

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007836392

記述言語：日本語   掲載種別：研究論文（研究会，シンポジウム資料等）

In surface fabrication process, such as the polishing in semiconductor substrate, there are many nano-particles moving on or nearby the surface to be polished. We have been establishing an optical method to observe and to track the 3-dimensional position of each dynamical moving nano-particle on time by applying an evanescent light field. In this report, the scattering light characteristic from a moving nano-particle in an evanescent field generated by internal reflection on a silica glass surface was analysed by FDTD (Finite Difference Time Domain) method on MATLAB. We discuss the scattering light from a particle moving perpendicularly to a surface in an interval time as one recorded frame in practical observation.

DOI： 10.1299/jsmemmt.2019.13.D18

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007836425

記述言語：日本語   掲載種別：研究論文（研究会，シンポジウム資料等）

In recent years, superconductive assisted machining method (SUAM) using a magnetic levitation tool utilizing a superconducting phenomenon such as pinning effect has been developed to reduce tool interference on the conventinal procceing method. Measurement of the force by the magnetic levitation tool is evauated in the air to determind polishing conditions. In our study, polishing test were performed not only on aluminum plate but also stainless steel plate using fixed and loose abrasives. As a result, the superconductive assisted machining method was applicable to stainless steel material.

DOI： 10.1299/jsmemmt.2019.13.D38

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007836391

記述言語：英語   掲載種別：研究論文（学術雑誌）

© 2018 The Japan Society of Applied Physics. The effects of ultrafine colloidal silica particles adsorbed on the surfaces of large silica particles in slurries used for the chemical mechanical polishing of sapphire were studied. Sapphire wafers were polished using hybrid silica particles that were composed of a mixture of ultrafine (4 nm) colloidal silica particles and large (20, 55, and 105 nm) silica particles. Dynamic light scattering results showed that the hybrid particles became larger after mixing. Transmission electron microscopy images revealed that the ultrafine particles adhered to the surfaces of the large particles and that the surface shape of the hybrid particles were changed by the mixing process. Atomic force microscopy and polishing results showed that the surface roughnesses and material removal rates of sapphire substrates were improved by using the hybrid particles. The coefficient of friction between the surface of the sapphire substrate and the hybrid particles was higher than that obtained using single-sized particles. These results confirm that the hybrid silica particles enhanced the performance of sapphire polishing.

DOI： 10.7567/JJAP.57.07MD03

Scopus

CiNii Article

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85049376037&origin=inward

記述言語：英語   掲載種別：研究論文（その他学術会議資料等）

<p>Chemical mechanical planarization is one of the crucial steps for the manufacturing process of semiconductor. CMP process with good adaptability can lead to high productivity, low defect, and coping with the ever-changing materials. In CMP process, slurry plays a big role in material removal. Among the composition of slurry, the abrasive predominates in the removal rate and surface quality. Therefore, this study develops the application of water-soluble nanoparticles, such as fullerene, as abrasives for the copper CMP process. By electroosmotic phenomenon, a kind of electro kinetic force, it generates the micro-flow field for abrasive during CMP process. The increasing disturbance of flow enhances the uniformity of abrasive distribution and polishing efficiency. The electrode embedded polishing platen which causes the electroosmotic flow on polishing pad is revealed and simulated by multi-physics fields coupling software, COMSOL Multiphysics. Finally, comparing with the results of simulation and flow visualization with fluorescent powders, the optimal and reasonable design is discussed.</p>

DOI： 10.11522/pscjspe.2018S.0_781

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007480589

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

© 2018 CURRAN-CONFERENCE. All rights reserved. This study proposes a non-contact measurement method for detecting a micro tool tip position at a nanometre precision in atmospheric environment as a non-contact tool setter. Particularly, to measure rotating small tools, optical measurement method are applied in non-contact tool setters. However, the generally used geometrical optical measurement methods do fundamentally not have nanometre precision due to the well-known light diffraction phenomenon, notably when measuring a micro tool. Furthermore, the non-contact tool setter for measuring a rotating micro tool has been indispensable because the position of a tool tip during rotation is different from the position of a static tool. The precision of tool position non-contact measurement is definitely required in nanometre scale due to the miniaturization of micro rotating tool size down to smaller than 50 μm. An evanescent light field is applied to detect a micro tool tip position in nanometre scale without contacting between a micro tool and a reference surface. In this paper, non-rotation micro tools with diameter of 50 μm were experimentally approached to and/or departed from a reference surface of a plano-convex lens by a nano-controlled piezo actuator to verify our proposed detection method. Consequently, the tool tips were recognised in the evanescent field during 300 nm range (or the evanescent field effective penetration depth) from the reference surface. It implies that the tool tip position could be detected more precisely than ±150 nm by only recognising the scattering light from the evanescent light field without tool contacting.

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85054532311&origin=inward

記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）

<p>ナノスケールにおける加工現象として，ナノ粒子を用いたポリシング加工がある．ポリシング加工のナノ粒子の挙動を観察し，ナノ粒子による加工現象を解明することを目的としている．そこで本研究では，表面上近傍に局在するエバネッセント光を用いた実時間計測を行っている．表面近傍にある既知のナノ単粒子に多波長エバネッセント光を当て，その散乱強度から深さ位置を調べ，分解能について検討したので，ここに報告する．</p>

DOI： 10.11522/pscjspe.2018S.0_129

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007480229

記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）

<p>The study on adhesion and desorption mechanism of nanoparticles near to polished wafer surface is necessary to efficiently clean the nano-particles from the wafer in semiconductor manufacturing process. This report proposes an optical method to visualize only the nano-particles moving near to Si₃N₄ and SiO₂ film surfaces by applying an evanescent field. We generated the evanescent field locating in limited range from the film surfaces by reflecting a laser beam at an incident angle larger than critical angle. Adhesion and desorption phenomena of the polystyrene latex standard particles (50±1 nm) and the SiO₂ particles (55 nm) moving near to the Si₃N₄ and SiO₂ film surfaces were observed by our developed experimental setup. Furthermore, desorption phenomenon of SiO₂ particles (105 nm) with the flow occurred by polyvinyl alcohol (PVA) sponge brush sliding was also demonstrated.</p>

DOI： 10.1299/jsmekanto.2018.24.OS0105

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007486587

記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）

Fabrication process of the pad has been developed by imprint method with special zig to control of the thickness and patter and electrode structure. Movement of the fine particle is controlled by electrical field using copper wire electrode inserted in the low refractive index – transparency polishing pad. As results, we can be observe the movement of the diamond particle between the pattern structures under the pad by electrical field using digital microscope.

DOI： 10.1299/jsmemmt.2018.12.D06

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007637887

記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）

近年，精密加工技術では，加工形状の複雑化や加工精度の向上の進行に伴い，工具干渉の問題が顕在化している．そこで本研究では，ピンニング効果などの超伝導現象を利用した磁気浮上工具を適用した研磨プロセスに適用した．この研磨法では磁気浮上工具の位置制御を行うことで，工具干渉の問題の軽減が可能である．本研究ではピンニング効果によって磁気浮上工具が空中で初期位置に復元する力（以後，引力と記載）を計測した．その結果，引力は超伝導バルクと磁気浮上工具の距離が近いほど増加した．ここでは引力が磁気浮上工具と超伝導バルク間の変位が4mmまで増加し，6mmまで一定であった．次に，固定砥粒パッドを用いて研磨圧力と回転数の影響について評価した結果，研磨圧力および回転数が高くなるにつれ，研磨量が増加した．

DOI： 10.11420/jsat.62.219

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007492417

担当区分：筆頭著者   記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）

<p>本研究ではコア微粒子上に直径4nmのナノシリカ微粒子や水酸化フラーレンを吸着により生成したハイブリット研磨微粒子を難加工研磨技術への適用を試みた．ここではコアシリカ微粒子の粒子径やナノシリカ微粒子水酸化フラーレンの吸着状態によりサファイアCMPの材料除去レートが変化した．そのためハイブリット研磨微粒子の構造を最適化することにより，化学的作用や機械的作用を独立に制御する手法を試みたので報告する．</p>

DOI： 10.11522/pscjspe.2018A.0_312

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007602798

記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）

DOI： 10.1299/jsmekyushu.2018.71.G26

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007487038

記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）

<p>本研究では，研磨メカニズムに重要な役割を果たしていると考えられるウェーハ・研磨パッド間スラリー流れの可視化を試みている．流れの相似則を利用して模擬的なスラリー流れを再現し，可視化した結果，第3報では，ウェーハ・研磨パッド間凹凸領域の循環流れについて報告した．本報では，コンディショニング条件の異なる5種類の研磨パッドについて，循環流れの数と研磨レートとの関係を調べたので，その結果を報告する．</p>

DOI： 10.11522/pscjspe.2018A.0_295

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007601761

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

© Published under licence by IOP Publishing Ltd. In this paper, magnetic levitation tool with superconducting bulks is introduced as a new hollow machining technology. Magnetic levitation tool is the machine that magnet levitates above superconducting bulks and driving force of rotating magnet shaves the object. This tool is expected to use for a grinding machine and machining device because of hollow machining and micromachining by strong fixing. For using magnetic levitation tool, the attractive force, the repulsive force and rotating torque are important for grinding machine, machining outer surface and both, respectively. These forces are calculated by FEM, and compared with experimental results. The experimental results are agreed well with calculated results. However, the attractive force is one order smaller than that required in chemical mechanical polishing.

DOI： 10.1088/1742-6596/871/1/012048

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85028004659&origin=inward

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

© 2017 The Japan Society of Applied Physics. The surface and diameter size variations of colloidal silica particles during the chemical mechanical polishing (CMP) of sapphire substrates were investigated using different particle diameters of 20 and 55 nm. Dynamic light scattering (DLS) results show that the silica particles became larger after CMP under both conditions. The increase in particle size in the slurry was proportional to the material removal amount (MRA) as a function of the removed volume of sapphire substrates by CMP and affected the material removal rate (MRR). Transmission electron microscopy (TEM) images revealed an increase in the size of the fine particles and a change in their surface shape in the slurry. The colloidal silica was coated with the material removed from the substrate during CMP. In this case, the increase in the size of 55nm diameter particles is larger than that of 20nm diameter particles. X-ray fluorescence spectrometry (XRF) results indicate that the aluminum element from polished sapphire substrates adhered to the surfaces of silica particles. Therefore, MRR decreases with increasing of polishing time owing to the degradation of particles in the slurry.

DOI： 10.7567/JJAP.56.07KB01

Scopus

CiNii Article

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85026266521&origin=inward

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

© 2017 The Japan Society of Applied Physics. We suggest that a transparency resin sheet with low refractive index can be applied to the measurement of a silicon dioxide (SiO2) film on a silicon wafer under wet condition for a film thickness measurement system on chemical mechanical polishing (CMP). By adjusting the refractive indices of the resin sheet and water, stable measurements of the SiO2film can be expected, irrespective of slurry film thickness fluctuation because it has robustness against the slurry film. This result indicates that the transparency resin sheet with low refractive index is a useful for monitoring system of CMP.

DOI： 10.7567/JJAP.56.07KH02

Scopus

CiNii Article

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85026222432&origin=inward

記述言語：英語   掲載種別：研究論文（学術雑誌）

© 2017, Fuji Technology Press. All rights reserved. This study proposes a non-contact measurement method for evaluating a micro cutting tool diameter at a sub-micrometer precision in atmospheric environment. Practically, non-contact tool measurements are widely used in optical measurement methods. However, the generally used geometrical optical measurement methods do fundamentally not have submicrometer precision due to well-known light diffraction phenomenon, notably when measuring a micro tool. We have been proposing and developing a measurement method especially for the micro tool utilizing laser diffraction. In this study, we subtracted a transparent light component from a laser light distribution diffracted by the micro tool to be measured to enhance diffraction pattern characteristics. Consequently, micro rods having diameters of 15, 20, and 30 µm could be precisely measured. Furthermore, in order to verify themethod validity, a two-helical-fluted micro tool (20 micrometer in diameter) was also measured while rotating (4 min-1) with less than 400 nm difference compared to images from a scanning electron microscopy (SEM) image. Finally, a trial to measure a micro drill diameter was also carried out during high-speed tool rotation (136,800 min-1) with our developed apparatus that is enough compact to be installed to machine tools, in order to perform the measurement in real rotation without stopping the tool rotation.

DOI： 10.20965/ijat.2017.p0736

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85028565760&origin=inward

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

© VDE VERLAG GMBH Berlin Offenbach BTA, benzotriazole, is recognized as an antioxidant agent for metallic surface modification, especially for copper and its alloys, preventing from the undesirable oxidation. In the copper chemical mechanical polishing (Cu-CMP) of semiconductor manufacturing process, BTA existing in polishing slurry plays a big role in the planarization, but its contaminations are not allowed remaining on the finished surface. The conventional post-cleaning solution containing TMAH and HF have been investigated to remove residual BTA, however, both are highly hazardous materials. This study aims to use polyhydroxylated fullerene, C60(OH)12, as the moderate additive for the Cu post-cleaning process to get rid of adhered BTA contamination. From XPS results, the BTA removal effect has been dectected, and also proved by contact angle and UV/Vis spectroscopy.

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85096743741&origin=inward

担当区分：責任著者   記述言語：日本語   掲載種別：研究論文（学術雑誌）

近年，加工形状の複雑化に伴い，工具干渉の問題が顕在化している．そこで，マイスナー効果やピンニング効果などの超伝導現象を利用した磁気浮上工具が考案された．超伝導により磁石を空中で回転させることが可能なため，磁石を工具として用いれば工具干渉を低減した新加工技術に応用できると考えた．超伝導による磁石の固定力の計測結果を用いて行った研削・研磨加工の結果について報告する．

DOI： 10.11522/pscjspe.2017a.0_765

CiNii Article

CiNii Research

記述言語：日本語   掲載種別：研究論文（学術雑誌）

<p>Non-contact tool setter for rotating micro tools has been needed because the position of tool tip during rotation is different from the position when the tool is not rotating. Furthermore, precision of tool position measurement is definitely required in nanoscale due to the miniaturization of micro rotating tool size down to smaller than 50<i>μ</i>m. An evanescent light field is applied to detect a micro tool tip position in nanoscale without contacting between micro tool and detector. In this report, micro tools with diameter of <i>φ</i> 50<i>μ</i>m were approached to and/or departed from a glass reference plane surface by a nano-controled piezo actuator to verify our detection method. Consequently, the tool tips were detected in the evanescent field during 300 nm range from the reference surface, implying that the tool tip can be detected in the precision of less than ±150 nm by only observing the scattering light from the evanescent light field without contacting.</p>

DOI： 10.1299/jsmemecj.2017.s1330103

CiNii Article

CiNii Research

その他リンク： https://www.jstage.jst.go.jp/article/jsmemecj/2017/0/2017_S1330103/_pdf

記述言語：日本語   掲載種別：研究論文（学術雑誌）

During copper chemical mechanical polishing (CMP) process, large amount of contamination residues on polished surface as removing of great number of copper. The common contaminations such as abrasives, metallic ion, and organic compound, that will discourage the metallic line of fabrication, even result in decline of efficiency. Benzotriazole(BTA) is known as passivation behavior that combined with metallic surface forming the protective layer from the serious corrosion, but it indicates a feature hard to be removed comprehensively in the general cleaning solution, for example water, ethanol, and acetone…etc. Polyhydroxylated fullerene, called fullerenol, as the outstanding nanoparticle is utilized in biomedicine, material science, and precision engineering fields according to its water-solubility, medicinal chemistry, and cage structure. This study aims to introduce the diluted fullerenol solution to remove the remained BTA film in post cleaning system. The 20mm in square of copper specimen is treated by 0.05M BTA solution for 2 min, and then dipped into diluted fullerenol solution for 2 min. Finally, it is measured by x-ray photoelectron spectroscopy (XPS), to observe the signal from 1s orbital of nitrogen. The results show the N1s peak (˜400eV) is decrease even disappears after treated by diluted fullerenol solution (0.01wt%, 0.05wt%, and 0.1wt%).

DOI： 10.11522/pscjspe.2017s.0_789

CiNii Article

CiNii Research

記述言語：日本語   掲載種別：研究論文（学術雑誌）

ナノスケールにおける加工現象として，ナノ粒子を用いたポリシング加工がある．本研究は，ポリシング加工のナノ粒子の挙動を観察し，ナノ粒子による加工現象を解明することを目的とする．そこで本研究では，表面上近傍に局在するエバネッセント光を用いた実時間観測を行っている．既知のナノ単粒子に多波長エバネッセント光を当て，その散乱光の強度を調べたので，ここに報告する．

DOI： 10.11522/pscjspe.2017a.0_985

CiNii Article

CiNii Research

担当区分：責任著者   記述言語：日本語   掲載種別：研究論文（学術雑誌）

DOI： 10.1299/jsmekyushu.2017.70.907

CiNii Article

CiNii Research

その他リンク： https://www.jstage.jst.go.jp/article/jsmekyushu/2017.70/0/2017.70_907/_pdf

記述言語：英語   掲載種別：研究論文（学術雑誌）

In this paper, we propose an optical method for observation and determination of individual nanosized particles that adhere to an interface by applying an evanescent field. Subsequently, we developed a portable (∼350 mm in length) experimental apparatus equipped with an optical microscopy system for particle observation. The observed intensity is consistent with that calculated using a light scattering model of sub-100-nm particles in the evanescent field.

DOI： 10.7567/JJAP.55.06JG02

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/150000112623

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

© 2015 American Vacuum Society. We suggest that evaluation method of the polishing pad surface topography by optical technique based on optical Fourier transform. In our measurement system, intensity distribution of the diffraction light detected by the area CCD camera reflect the surface topography of the polishing pad. In this case, the incident light angles is a dominant parameter to detect the diffraction light from the several surface topographies formed by dressing process. The wavelength composition ratio (WCR)s were calculated by integration of the diffraction light intensity against the spatial wavelength of the polishing pad surface topography to quantify the surface topographies parameter of the polishing pad. As results, the high correlation coefficient between the WCRs and the material removal rate and erosion can be realized over 0.8 by optimizing incident light angle.

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84964413075&origin=inward

記述言語：日本語   掲載種別：研究論文（学術雑誌）

本研究では超電導現象である磁気浮上を利用し、金型や3Dプリンタなどの中空部品成形技術が抱える問題を解消する新規中空加工技術の確立を目指している。その概要としては、磁気浮上を利用して磁性体や超伝導体を一定間隔離して浮上させトラップし、さらに回転運動を加え回転工具とすることで被加工物を切削する技術である。本報では樹脂などを用いて本加工技術の原理検証を行ったので、その内容について報告する。

DOI： 10.11522/pscjspe.2016s.0_971

CiNii Article

CiNii Research

担当区分：責任著者   記述言語：日本語   掲載種別：研究論文（学術雑誌）

CMPでは，複数の加工材料に対して最適なスラリーやポリシングパッドを適用させる必要がある．これらの部材を最適化するためには，材料除去メカニズムに基づき，スラリー中微粒子の種類や微粒子径，材質，薬液を選定することが重要である．そこで本研究では，サファイア，SiO2などの複数の基板に対して動的光散乱法（DLS）を用いて微粒子径の変化について評価したので報告する．

DOI： 10.11522/pscjspe.2016s.0_371

CiNii Article

CiNii Research

担当区分：責任著者   記述言語：日本語   掲載種別：研究論文（学術雑誌）

<p>Transparency micro-patterned pad is used to observe fine particles by an epi-illumination microscope. The material of transparency micro-patterned pad is resin which has almost same as the refractive index of water. Therefore, it has characteristic that the micro pattern could disappear in the observation image by filling water. Epi-illumination microscope has illumination system and the detection system on the same side. In this study, we succeeded to observe the diamond particles with a diameter of 1μm on the glass substrate at 1000 frame/s in dark-field illumination. This results show that the fine particles could be observed simplicity, and also suggest the possibility that the fine particles observation on opaque substrate using the epi-illumination microscope.</p>

DOI： 10.1299/jsmemecj.2016.s1330203

CiNii Article

CiNii Research

その他リンク： https://www.jstage.jst.go.jp/article/jsmemecj/2016/0/2016_S1330203/_pdf

記述言語：英語   掲載種別：研究論文（その他学術会議資料等）

This research studies the method to optimization of polishing slurry which colloidal silica based (SiO_2 slurry) containing C_<60>(OH)_n n=ca.10 for Chemical Mechanical Polishing (CMP) process by concentration dependence on the C_<60>(OH)_n solute between 0-0.05 wt% and varying size of abrasive particle in colloidal silica slurry between 20-55 nm. We focussed on relationship between the effect of abrasive particle size and polishing performance such as Material Removl Rate (MRR) and surface roughness of sapphire substartes. This paper consists of two parts, the first section in order of slurry preparation and polishing condition setting up for CMP process. The last section are the MRR value calculating and abrasive particle diameter size before and after CMP process measuring for optimization of mixed colloidal silica and fullerenol slurry in CMP of sapphire. These results indicate that diameter of the fine particle composed by colloidal silica slurry and C_<60>(OH)_n is a dominant parametrs to determid the MRR values against the apphire CMP.

DOI： 10.1299/jsmekyushu.2016.69.361

CiNii Article

CiNii Research

その他リンク： https://www.jstage.jst.go.jp/article/jsmekyushu/2016.69/0/2016.69_361/_pdf

記述言語：日本語   掲載種別：研究論文（学術雑誌）

本講演では，二波長のエバネッセント光を用いることにより，ナノスケールにおける加工表面近傍に作用する単粒子（各粒子）の挙動を3次元的に追跡する手法を提案する．

DOI： 10.11522/pscjspe.2016s.0_5

CiNii Article

CiNii Research

担当区分：責任著者   記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

日本   神戸   2014年11月19日  -  2014年11月21日

DOI： 10.1109/ICPT.2014.7017281

Scopus

その他リンク： http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6996093

記述言語：英語   掲載種別：研究論文（学術雑誌）

DOI： 10.1299/jsmekyushu.2014.67._724-1_

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/110009951361

記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）

これまでのCMP材料除去メカニズムに関する研究では，スラリー中の微粒子が被研磨物表面に接触した際に凝着現象によって材料除去が発生することが報告されているものの、凝着現象についての定量的評価法が確立されておらず，凝着量と研磨量との相関性について評価を行うことができない．そこで本研究では，FE-SEMやDLSを用いた凝着量の定量的評価法の確立及び凝着量と研磨量との相関性について評価を試みたのでその内容について報告する．

DOI： 10.11522/pscjspe.2014S.0_279

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130005478850

記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）

難加工材料の基板形成プロセスでは研磨効率の向上は不可欠である．難加工材料の研磨技術としては現在プロズマ援用による高効率研磨技術が注目を集めているがこの場合新規に装置開発をする必要がある．本研究では研磨微粒子自体の高硬度化や化学反応性の向上を目的とし，紫外線照射により水酸化フラーレンやダイヤモンドから新規ナノ微粒子を生成することで，研磨性能の向上を試みたのでこれらの結果について報告する．

DOI： 10.11522/pscjspe.2014A.0_19

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130005479359

記述言語：英語   掲載種別：研究論文（その他学術会議資料等）

Material Removal Rate of sapphire CMP using silica slurry with the fullerenol increase as the higher concentration of the fullerenol in the slurry. The surface roughness of the sapphire substrate gives the influence against the MRR of sapphire CMP. Raman spectra indicate that molecule structure did not change during CMP process. The structure of fine particle by silica particle and fullerenol in the liquid characterize using DLS method. As results, two layers fullerenol molecules are adsorbed on the silica particle. And we discuss on the fine particle with the fullerenol based on our results.

DOI： 10.1299/jsmemmt.2014.10.177

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/110009939353

記述言語：英語   掲載種別：研究論文（学術雑誌）

The material removal mechanisms on the SiO_2-CMP have been studied to develop new slurries and polishing pads for the advanced ULSI devices. We focus on the chemical reacted layer at the surface of SiO_2 film because formation of the layer is effected by pH of the slurry. Relationship between the MRR (Material removal rate) and chemical reacted layer was suggested by the results of the CMP tests and SEM observations at various pH conditions from 7.5 to 12.5. The size of the SiO_2 fine particles increase as the higher pH reason because the surface of the SiO_2 fine particles might be changed during the CMP. In our report, we discuss the material removal mechanism based on the experimental result of the SEM observation on the SiO_2 fine particles.

DOI： 10.1299/jsmemmt.2014.10.175

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/110009939352

担当区分：責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）

DOI： 10.1143/JJAP.51.05EF04

Scopus

CiNii Article

その他リンク： http://iopscience.iop.org/1347-4065/

記述言語：英語   掲載種別：研究論文（学術雑誌）

The Far-field laser diffraction is proposed for measuring tool cutting-edges geometry with sub-micrometer precision. In particular, by eliciting an optical diffraction phenomenon, the cutting-edge of the tool can be monitored without a diffraction limit. This method can also be applied for on-machine measurements because of the simplicity and long working distance of the optical system; high precision can be achieved by using a laser light and there is no need for a vacuum environment. In this study, an on-machine tool measurement device using laser diffraction was developed to experimentally measure tool displacements of order of hundreds of nanometers; a piezo-drive stage was also used. Measurements of the cutting-edge curve of a ball end mill and a tool cutting-edge tolerance were also experimentally monitored.

DOI： 10.20965/ijat.2012.p0163

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84863240980&origin=inward

担当区分：責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）

記述言語：英語   掲載種別：研究論文（学術雑誌）

The Fourier transform analysis is proposed to quantitatively evaluate the 3D surface topography of Chemical Mechanical Polishing (CMP) pads used for flattening and smoothing processed semiconductor substrates. The conditioned polishing pad surfaces have a wide range of irregular topographies ranging from topographies of a sub-micrometer to those of a hundredmicrometer order. Hence, a Confocal Laser Scanning Microscope (CLSM), which can provide nanometer resolution in wide range of lateral directions by means of linear encoded mechanical stage translation, was employed to obtain numerical data of the three-dimensional topographic surfaces of polishing pad samples. The measured topographic surfaces were analyzed using the spatial Fourier transform. We discuss the power spectrum in the spatial wavelengths of polishing pad surfaces which were conditioned with diamond grits of various shapes. The analyzed power spectra indicated that the surface topography characteristics varied with differently shaped diamond grits of the same size. The diamond grits roughened the polishing pad surface. We also found that a rough polishing pad surface, one that was roughed in a spatial wavelength that of less than 20 micrometers, removed more material than comparatively smooth pad surfaces.

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84862909298&origin=inward

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

In the Sapphire Chemical Mechanical Polishing Method, the abrasive properties of fullerenol was examined, in conjunction with diamond particles, in mixed-abrasive slurries (MAS). The Ra surface roughness of Sapphire substrates was found to be improved after MAS CMP, in comparison with the use of diamond slurry CMP. These results suggest that the removal of materials in the Sapphire CMP process involves the generation of defects by the diamond abrasives, which then chemically react with the fullerenol abrasive and/or the slurry chemicals.

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79957668547&origin=inward

開催期間： 2017年01月   記述言語：英語  

水と同等の屈折率を有する透明な樹脂パッドを用いて、スラリー中の微粒子観察やシリコン酸化膜の膜測など、CMPにおけるモニタリング技術に関する研究を行っている。今回は低屈折率の透明樹脂パッドを用いたモニタリング技術のコンセプトと、その足がかりとなる実験データについて報告する。

CiNii Article

開催期間： 2017年01月   記述言語：日本語  

ナノスケールにおける加工現象として，ナノ粒子を用いたポリシング加工がある．本研究は，ポリシング加工のナノ粒子の挙動を観察し，ナノ粒子による加工現象を解明することを目的とする．そこで本研究では，表面上近傍に局在するエバネッセント光を用いた実時間観測を行っている．既知のナノ単粒子に多波長エバネッセント光を当て，その散乱光の強度を調べたので，ここに報告する．

CiNii Article

開催期間： 2017年01月   記述言語：英語  

During copper chemical mechanical polishing (CMP) process, large amount of contamination residues on polished surface as removing of great number of copper. The common contaminations such as abrasives, metallic ion, and organic compound, that will discourage the metallic line of fabrication, even result in decline of efficiency. Benzotriazole(BTA) is known as passivation behavior that combined with metallic surface forming the protective layer from the serious corrosion, but it indicates a feature hard to be removed comprehensively in the general cleaning solution, for example water, ethanol, and acetone&hellip;etc. Polyhydroxylated fullerene, called fullerenol, as the outstanding nanoparticle is utilized in biomedicine, material science, and precision engineering fields according to its water-solubility, medicinal chemistry, and cage structure. This study aims to introduce the diluted fullerenol solution to remove the remained BTA film in post cleaning system. The 20mm in square of copper specimen is treated by 0.05M BTA solution for 2 min, and then dipped into diluted fullerenol solution for 2 min. Finally, it is measured by x-ray photoelectron spectroscopy (XPS), to observe the signal from 1s orbital of nitrogen. The results show the N1s peak (&tilde;400eV) is decrease even disappears after treated by diluted fullerenol solution (0.01wt%, 0.05wt%, and 0.1wt%).

CiNii Article

開催期間： 2016年01月   記述言語：日本語  

<p>Transparency micro-patterned pad is used to observe fine particles by an epi-illumination microscope. The material of transparency micro-patterned pad is resin which has almost same as the refractive index of water. Therefore, it has characteristic that the micro pattern could disappear in the observation image by filling water. Epi-illumination microscope has illumination system and the detection system on the same side. In this study, we succeeded to observe the diamond particles with a diameter of 1μm on the glass substrate at 1000 frame/s in dark-field illumination. This results show that the fine particles could be observed simplicity, and also suggest the possibility that the fine particles observation on opaque substrate using the epi-illumination microscope.</p>

CiNii Article

開催期間： 2016年01月   記述言語：日本語  

本研究では超電導現象である磁気浮上を利用し、金型や3Dプリンタなどの中空部品成形技術が抱える問題を解消する新規中空加工技術の確立を目指している。その概要としては、磁気浮上を利用して磁性体や超伝導体を一定間隔離して浮上させトラップし、さらに回転運動を加え回転工具とすることで被加工物を切削する技術である。本報では樹脂などを用いて本加工技術の原理検証を行ったので、その内容について報告する。

CiNii Article

開催期間： 2016年01月   記述言語：日本語  

CMPでは，複数の加工材料に対して最適なスラリーやポリシングパッドを適用させる必要がある．これらの部材を最適化するためには，材料除去メカニズムに基づき，スラリー中微粒子の種類や微粒子径，材質，薬液を選定することが重要である．そこで本研究では，サファイア，SiO2などの複数の基板に対して動的光散乱法（DLS）を用いて微粒子径の変化について評価したので報告する．

CiNii Article

開催期間： 2016年01月   記述言語：日本語  

本講演では，二波長のエバネッセント光を用いることにより，ナノスケールにおける加工表面近傍に作用する単粒子（各粒子）の挙動を3次元的に追跡する手法を提案する．

CiNii Article

開催期間： 2016年01月   記述言語：英語  

This research studies the method to optimization of polishing slurry which colloidal silica based (SiO_2 slurry) containing C_<60>(OH)_n n=ca.10 for Chemical Mechanical Polishing (CMP) process by concentration dependence on the C_<60>(OH)_n solute between 0-0.05 wt% and varying size of abrasive particle in colloidal silica slurry between 20-55 nm. We focussed on relationship between the effect of abrasive particle size and polishing performance such as Material Removl Rate (MRR) and surface roughness of sapphire substartes. This paper consists of two parts, the first section in order of slurry preparation and polishing condition setting up for CMP process. The last section are the MRR value calculating and abrasive particle diameter size before and after CMP process measuring for optimization of mixed colloidal silica and fullerenol slurry in CMP of sapphire. These results indicate that diameter of the fine particle composed by colloidal silica slurry and C_<60>(OH)_n is a dominant parametrs to determid the MRR values against the apphire CMP.

CiNii Article

開催期間： 2015年10月18日   記述言語：英語  

This article reveals a non-contact measurement method for evaluating micro cutting tool diameter in precision of sub micrometer in atmosphere environment. Practically, optical methods are widely used in non-contact tool measurements. However, the generally-used geometrical optical measurement methods do fundamentally not have sub micrometer precision due to well-known light diffraction phenomenon, notably when measuring a micro tool. We have been proposing and developing a measurement method particularly for the micro tool applying laser diffraction. In this article, we subtracted a transparent light component from a laser light distribution diffracted by the micro tool to be measured to enhance diffraction pattern characteristics. Consequently, micro rods of 15, 20 and 30 micrometer in diameter could be precisely measured. Furthermore, in order to verify this measurement validity, a 2 helical flutes micro tool (20 micrometer in diameter) during rotation (4 min-1) was also measured as 400 nm difference comparatively with an image from a scanning electron microscopy (SEM) image.

開催期間： 2015年10月18日   記述言語：英語  

Transparency micro-patterned pad, which have high transmittance at the visible wavelength region and low refractive index equivalent to water, has been developed to observe particle movement during lapping and polishing process directly. The fundamental geometry of the micro pattern has a trapezoidal pyramid shape having the base width of 6.97 μm, the height of 2.40 μm and the pitch of 12.00 μm. In the case of transparency micro-patterned pad at low diffraction index, pyramid pattern contrast in the observation image could be eliminated by filling water between the transparency micro-patterned pad and glass substrate. Therefore, we succeeded observation on the movement of diamond particles by light scattering without interference from the transparency micro-patterned pad pattern. This observation results suggest that the transparency micro-patterned pad would be a useful tool for the dynamic observation directly during the lapping and polishing.

開催期間： 2015年01月   記述言語：日本語  

本研究では半導体基板の表面（例えばポリシング）加工において加工液に含まれているナノ粒子が被加工表面に与える加工因子などを解析するため，本稿ではエバネッセント光（近接場光）を用い，加工機に搭載可能な被加工表面であるナノスケールにおける加工現象の可視化装置を開発した．本手法は被加工表面近傍である近接場光領域に侵入した個々のナノ粒子からの散乱光を追跡することにより，加工に関わる遊動粒子の挙動を可視化するものである．開発した光学系の性能評価のち粒径100nm以下のナノ粒子挙動の観察を試みたので報告する．

CiNii Article

開催期間： 2015年01月   記述言語：日本語  

CiNii Article

開催期間： 2015年01月   記述言語：日本語  

CiNii Article

開催期間： 2015年01月   記述言語：日本語  

CiNii Article

開催期間： 2015年01月   記述言語：日本語  

CiNii Article

開催期間： 2015年01月   記述言語：英語  

Transparency micro-patterned pad, which have high transmittance at the visible wavelength region and low refractive index equivalent to water, has been developed to observe particle movement during lapping and polishing process directly. The fundamental geometry of the micro pattern has a trapezoidal pyramid shape having the base width of 6.97μm, the height of 2.40μm and the pitch of 12.00μm. In the case of transparency micro-patterned pad at low diffraction index, pyramid pattern contrast in the observation image could be eliminated by filling water between the transparency micro-patterned pad and glass substrate. Therefore, we succeeded observation on the movement of diamond particles by light scattering without interference from the transparency micro-patterned pad pattern. This observation results suggest that the transparency micro-patterned pad would be a useful tool for the dynamic observation directly during the lapping and polishing.

CiNii Article

開催期間： 2015年01月   記述言語：英語  

This article reveals a non-contact measurement method for evaluating micro cutting tool diameter in precision of sub micrometer in atmosphere environment. Practically, optical methods are widely used in non-contact tool measurements. However, the generally-used geometrical optical measurement methods do fundamentally not have sub micrometer precision due to well-known light diffraction phenomenon, notably when measuring a micro tool. We have been proposing and developing a measurement method particularly for the micro tool applying laser diffraction. In this article, we subtracted a transparent light component from a laser light distribution diffracted by the micro tool to be measured to enhance diffraction pattern characteristics. Consequently, micro rods of 15, 20 and 30 micrometer in diameter could be precisely measured. Furthermore, in order to verify this measurement validity, a 2 helical flutes micro tool (20 micrometer in diameter) during rotation (4 min^<-1>) was also measured as 400 nm difference comparatively with an image from a scanning electron microscopy (SEM) image.

CiNii Article

開催期間： 2015年01月   記述言語：英語  

In the CMP (Chemical Mechanical Polishing) process, the polishing pad is a factor which greatly affects the polishing performance, since the surface shape of contributing to the polishing pad has a very fine and complex shape, the analysis of polishing pad surface is difficult. We have analyzed the polishing pad surface shape by using the method of optical Fourier transform was devised on the basis of the diffraction phenomenon of light. In this study, by altering the incident angle of the laser beam to be irradiated to the polishing pad, we report makes it possible to clarify the difference of the polishing pad surface shape.

CiNii Article

開催期間： 2015年01月   記述言語：英語  

In the recent years, a number of papers on electric discharge machining, electrochemical machining, and fine particle jet machining have been reported. Applying these micro scale machining methods to the nano scale machining compatible with semiconductor processes as in MEMS faces several difficulties. In this paper, nano particles were applied in order to establish a new nano scale machining method by imprinting the shape and diameter of nano particles through plasma generated in air. As the first step of this study, the relation between the shape and diameter of nano particles and the surface feature of workpiece caused by plasma discharge in air was focused.

CiNii Article

開催期間： 2012年01月01日   記述言語：英語  

The Far-field laser diffraction has been applying to monitor tool cutting-edge position with sub-micrometre precision because of eliciting a diffraction phenomenon. In this paper, a pulsed laser was irradiated to a gap consisting of a high-speed (150,000min-1) rotation tool and a workpiece edge in order to experimentally measured the distance of the tool tip away from the workpiece every 50 nm by the detected diffraction pattern.

開催期間： 2011年03月01日   記述言語：英語  

A fluorescent agent was used instead of slurry to visualize the flow of slurry, the polishing liquid solution supplied in Chemical Mechanical Polishing (CMP). Under ultraviolet irradiation, the fluorescent agent emits light, which performs the flow of the slurry under the quartz glass, which is applied as a photomask substrate in Flat-Panel Display (FPD) manufacturing. The emitted light was observed with a digital camera. Compared to a round shape of quartz glass substrate, a large amount of fluorescent agent supplied was taken away by the straight edges of the quadrilateral geometry of the substrate and moved to the outer edge of a polishing pad placed on a platen. The fluorescent agent that was taken away by the quadrilateral geometry also remained as several uneven spiral patterns on the polishing pad when the revolution speeds both of the quadrilateral substrate and the platen, which are practically set at same or almost revolution speed, were not sufficient. Next, when the quadrilateral substrate rotated at high revolution speed (60 min -1), the fluorescent agent flowed most evenly and spread throughout the entire substrate area in the shortest time. Finally, a combination of thermocouples and a wireless signal transmission system is introduced to investigate the temperature in glass substrate CMP process.

開催期間： 2010年12月01日   記述言語：英語  

CMP is applied to polish the photomask substrate. The quadrilateral quartz glass used as the FPD photomask substrate has become enlarged. However, the slurry cannot flow throughout the glass surface evenly due to enlarged size of the substrate. The purpose of this work is to improve on the spread of slurry into non-inflow region by suctioning the slurry on the polishing pad through a hole at center of platen. The fluorescent agent was used instead of slurry for flow visualization.

対象： 高校生

種別：出前授業

長崎県立松浦高等学校

対象： 高校生

種別：出前授業

熊本県立東稜高等学校

対象： 高校生

種別：出前授業

広島県立海田高等学校

対象： 高校生

種別：出前授業

熊本市立必由館高等学校　2年

対象： 高校生

種別：出前授業

福岡県立太宰府高等学校　1年

対象： 中学生

種別：出前授業

明治学園中学校　1~2年

対象： 高校生

種別：出前授業

広島なぎさ高等学校　2年

対象： 高校生

種別：出前授業

熊本県立阿蘇中央高等学校　1～2年

対象： 高校生

種別：出前授業

福岡県立中間高等学校　1～3年

対象： 高校生

種別：出前授業

筑紫台高等学校