Updated on 2024/05/14

写真a

 
BABA Akiyoshi
 
Scopus Paper Info  
Total Paper Count: 0  Total Citation Count: 0  h-index: 4

Citation count denotes the number of citations in papers published for a particular year.

Affiliation
Center of Micro Center for Microelectronic Systems
Job
Professor
External link

Research Interests

  • Micro Electrical Mechanical System

  • Inkjet

  • Sensor Element

  • Solar Cell

  • Power Device

  • Microfabrication

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

  • Nanotechnology/Materials / Nano/micro-systems

Degree

  • Kyushu University  -  Doctor of Engineering   1997.09

Biography in Kyutech

  • 2022.04
     

    Kyushu Institute of Technology   Advanced Research and Social Cooperation Headquarters   Center for Microelectronic Systems   Professor  

  • 2019.04
    -
    2022.03
     

    Kyushu Institute of Technology   Organization for Promotion of Research and Open Innovation   Center for Microelectronic Systems   Professor  

  • 2007.04
    -
    2019.03
     

    Kyushu Institute of Technology   Center for Microelectronic Systems   Associate Professor  

Academic Society Memberships

  • 2015.08 - 2016.11   第33回センサーシンポジウム   Japan

Papers

  • Piezoelectric MEMS wideband acoustic sensor coated by organic film Reviewed International journal

    Kuchiji H., Masumoto N., Baba A.

    Japanese Journal of Applied Physics   62   2023.06

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.35848/1347-4065/acbb82

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  • Piezoelectric MEMS Wideband Acoustic Sensor Coated by Organic Film Reviewed International journal

    Hiroyuki Kuchiji,Naoki Masumoto,Akiyoshi Baba

    Digest of 35th International Microprocesses and Nanotechnology Conference (MNC2022)   11P-4-32   2022.11

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (other academic)

    日本   徳島   2022.11.08  -  2022.11.11

  • Absolute longitudinal distance measurement verification of a standard polystyrene nanoparticle near a surface in water by means of multi-wavelength evanescent field Reviewed

    Blattler A., Khajornrungruang P., Suzuki K., Baba A., Goto D.

    European Society for Precision Engineering and Nanotechnology, Conference Proceedings - 22nd International Conference and Exhibition, EUSPEN 2022   385 - 388   2022.01

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  • Study on Nanoscale Observatory in Polishing Phenomena applying Optical Evanescent Field

    Permpatdechakul Thitipat, Khajornrungruang Panart, Suzuki Keisuke, Baba Akiyoshi

    Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering )   2021A ( 0 )   102 - 103   2021.09

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    Language:Japanese   Publishing type:Research paper (conference, symposium, etc.)

    <p>The nanoscale polishing phenomena between substrate surface, 105 nm-sized SiO<sub>2</sub> particles slurry, and polishing pad during CMP process were experimentally observed and evaluated to identify the main factors which effectively polish a 4H-SiC substrate. The nanoscale polishing phenomena were observed in-situ by our developed compact apparatus applied an optical evanescent field. The observation is able to detect the scattering light from either the nano-abrasive particles or the pad asperities when they react to the surface to being polishing. The nanoparticle motion phenomena, which two conditions (i)only nanoparticles (without pad) and (ii)nanoparticles with pad sliding, on 4H-SiC substrate were observed. According to the observed results, the observed scattering light of nanoparticle on 4H-SiC was the ellipse shape compared with the observing on SiO<sub>2</sub> substrate. Furthermore, we could observe the particles moved nearer and then adhered on the surface. Less particle’s Brownian motion when the particle moved nearer to the surface. In case of nanoparticle with pad sliding, we could observe only the scattering light of pad sliding because the scattering light intensity of particle is quite lower than pad. Therefore, approached nanoparticle to 4H-SiC surface phenomena might be one possible role to explain higher polishing rate CMP parameter.</p>

    DOI: 10.11522/pscjspe.2021a.0_102

    CiNii Research

  • Study on On-Machine Visualization of Surface Processing Phenomena in Nanoscale

    Blattler Aran, Khajornrungruang Panart, Suzuki Keisuke, Baba Akiyoshi

    Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering )   2021A ( 0 )   588 - 589   2021.09

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    Language:Japanese   Publishing type:Research paper (conference, symposium, etc.)

    <p>An abrasive nanoparticle behavior in chemical mechanical polishing (CMP) process is a three-dimensional (3D) motion near a substrate or reference surface. The height position is a longitudinal distance between the reference surface and nanoparticle, which is a challenge for measuring the height position in a wet condition. Our previous report could estimate the relative height of polystyrene 100 nm particles by applying multi-wavelength evanescent fields, but the absolute height was not confirmed yet. Therefore, in this report, we proposed a design concept for absolute height verification by using the developed nano-step height patterns. The nano-step height was approximately less than hundred nanometers from the reference surface. The nano-step height made from an optical resin that has a refractive index close to water to decrease the scattering light during observing nanoparticles in water. Polystyrene 100 nm particles on the nano-step height were used to estimate the absolute height of nanoparticle. The proposed concept could be used to verify the nanoparticle's absolute height in water, which can be applied to clarify the nanoparticle phenomena during the CMP process in the near future.</p>

    DOI: 10.11522/pscjspe.2021a.0_588

    CiNii Research

  • The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate Reviewed International journal

    Duangchan S., Yamamoto K., Wang D., Nakashima H., Baba A.

    4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings   2020.04

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)

    DOI: 10.1109/EDTM47692.2020.9117986

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  • The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate Reviewed International journal

    Sethavut Duangchan, Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang

    4th IEEE Electron Devices Technology and Manufacturing Conference (EDTM2020)   2020.03

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    Malaysia   Penang   2020.03.16  -  2020.03.18

  • SiN used as a stressor in Germanium-On-Insulator substrate Reviewed International journal

    Sethavut Duangchan, Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang

    2019 International 3D Systems Integration Conference (3DIC)   2019.10

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    Japan   Sendai   2019.10.08  -  2019.10.10

  • SiN used as a Stressor in Germanium-On-Insulator Substrate Reviewed International journal

    Duangchan S., Yamamoto K., Wang D., Nakashima H., Baba A.

    IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019   2019.10

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    DOI: 10.1109/3DIC48104.2019.9058896

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  • Modulation transfer function analysis of silicon X-ray sensor with trench-structured photodiodes Reviewed

    Ariyoshi Tetsuya, Iwasa Jumpei, Takane Yuta, Sakamoto Kenji, Baba Akiyoshi, Arima Yutaka

    IEICE Electron. Express   15 ( 11 )   20180177 - 20180177   2018.06

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    DOI: 10.1587/elex.15.20180177

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    Other Link: https://ci.nii.ac.jp/naid/130007395665

  • Fabrication of silicon-on-diamond substrate with an ultrathin SiO<inf>2</inf>bonding layer Reviewed

    Nagata M., Shirahama R., Duangchan S., Baba A.

    Japanese Journal of Applied Physics   57 ( 6 )   2018.06

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    DOI: 10.7567/JJAP.57.06HJ08

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  • Silicon trench photodiodes on a wafer for efficient X-ray-to-current signal conversion using side-X-ray-irradiation mode Reviewed

    57 ( 4 )   2018.04

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    DOI: 10.7567/JJAP.57.04FH04

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  • Fabrication of Silicon on Diamond Structure with an Ultra-Thin SiO2 Bonding Layer by Sputter Etching Method Reviewed

    8D-6-1   2017.11

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    Korea   Jeju   2017.11.06  -  2017.11.09

  • Estimation of the Conversion Properties of Trench-Structured Silicon X-ray Photodiodes by the Side X-ray Irradiation Method Reviewed

    Tetsuya Ariyoshi, Yuta Takane, Jumpei Iwasa, Kenji Sakamoto, Akiyoshi Baba, Yutaka Arima

    321 - 322   2017.09

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    Japan   Sendai   2017.09.19  -  2017.09.22

  • X-ray-to-current signal conversion characteristics of trench-structured photodiodes for direct-conversion-type silicon X-ray sensor Reviewed

    56 ( 4 )   2017.04

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    Language:English   Publishing type:Research paper (international conference proceedings)

    DOI: 10.7567/JJAP.56.04CH06

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  • High-performance vertical Si PiN diode by hole remaining mechanism Reviewed

    129   22 - 28   2017.03

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1016/j.sse.2016.12.006

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  • Reduced operating temperature of active layer Si covered by nanocrystalline diamond film Reviewed

    28 ( 1 )   617 - 624   2017.01

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1007/s10854-016-5566-2

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  • Sensitivity Properties of a Direct Conversion Silicon X-ray Sensor with Trench-Structured Photodiodes Reviewed

    141 - 142   2016.09

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    Japan   Tsukuba   2016.09.26  -  2016.09.29

  • Novel 600 v low reverse recovery loss vertical PiN diode with hole pockets by Bosch deep trench Reviewed

    2016-July   295 - 298   2016.07

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    Language:English   Publishing type:Research paper (international conference proceedings)

    DOI: 10.1109/ISPSD.2016.7520836

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  • The Influence of Plasma Conditions on Surface-Activation that Affect the Bonded Area Reviewed

    283 - 284   2016.06

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    Japan   Kanazawa   2016.06.26  -  2016.06.29

  • Novel 600 V Low Reverse Recovery Loss Vertical PiN Diode with Hole Pockets by Bosch Deep Trench Reviewed

    295 - 298   2016.06

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    Czech Republic   Prague   2016.06.12  -  2016.06.16

  • The heat performance study of nanocrystal diamond film used in a thin film device Reviewed

    2015.09

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  • Design of a MEMS device for scanning profile measurement with three cantilever displacement sensors Reviewed

    2015.09

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  • Influential factors in low-temperature direct bonding of silicon dioxide Reviewed

    2015.08

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    DOI: 10.1109/3DIC.2015.7334585

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  • The silicon on diamond structure by low-temperature bonding technique Reviewed

    2015.05

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    DOI: 10.1109/ECTC.2015.7159590

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  • Finite element analysis using a hierarchal decomposition for the interaction of structure, fluid and electrostatic field in mems Reviewed

    1023 - 1028   2015.01

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  • Hierarchal decomposition for the structure-fluid-electrostatic interaction in a microelectromechanical system Reviewed

    108 ( 6 )   429 - 452   2015.01

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  • The effect of surface roughness in SiO2/SiO2 low-temperature bonding Reviewed

    B-1-3   2014.12

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    日本   北九州市   2014.12.20  -  2014.12.21

  • Finite Element Analysis Using Hierarchal Decomposition for Interaction of Structural, Fluidic and Electrostatic Fields in MEMS Structural Components Reviewed

    Daisuke ISHIHARA, Tomoyoshi HORIE, Tomoya NIHO, Akiyoshi BABA

    79 ( 804 )   1291 - 1302   2013.08

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    Language:Japanese   Publishing type:Research paper (scientific journal)

    DOI: 10.1299/kikaia.79.1291

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  • Side-Illuminated Color photo Sensor Reviewed

    ( 52 )   04CE10   2013.03

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  • 2513 Finite element analysis for interaction for structural : fluidic and electrostatic fields in MEMS structural components

    SHUKUWA Yusuke, ISHIHARA Daisuke, HORIE Tomoyoshi, NIHO Tomoya

    The Proceedings of The Computational Mechanics Conference ( The Japan Society of Mechanical Engineers )   2013 ( 0 )   _2513 - 1_-_2513-2_   2013.01

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    DOI: 10.1299/jsmecmd.2013.26._2513-1_

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    Other Link: https://ci.nii.ac.jp/naid/110009936408

  • High Efficiency Near-Infrared Detection using Deep-Trench Photo-Diode Invited Reviewed

    25th International Microprocesses and Nanotechnology Conference   1-p-7-101   2012.10

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    日本   神戸   2012.10.30  -  2012.11.02

  • Fabrication of a polylactide micro-needle array using transfer mold technique for transdermal drug delivery Invited Reviewed

    1-P-7-94   2012.10

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    日本   神戸   2012.10.30  -  2012.11.02

  • Side-Illuminated Color photo Sensor Reviewed

    International Conference on Solid State Devices and Materials   144 - 145   2012.09

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    日本   京都   2012.09.25  -  2012.09.27

    DOI: 10.7567/JJAP.52.04CE10

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  • Finite element analysis for interaction problems of structure, fluid and electrostatic field in micro cantilever beams Invited Reviewed

    255 - 260   2012.09

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    日本   金沢   2012.09.12  -  2012.09.12

  • Improved Near-Infrared Sensitivity with a Side-Illuminated Photosensor Reviewed

    Tetsuya Ariyoshi, Noriyuki Uryu, Akiyoshi Baba, Yutaka Arima

    Jpnese Journal of Applied Physics   51   02BE01   2012.02

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    DOI: 10.1143/JJAP.51.02BE01

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  • Fabrication of pn junction at the wall of deep trench for near-infrared sensor Reviewed

    Akiyoshi Baba, Noriyuki Uryu, Senichi Sumi

    24th International Microprocesses and Nanotechnology Conference   2011.10

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  • Improved Near-Infrared Sensitivity for a Side-Illuminated Photo Sensor Reviewed

    Tetsuya Ariyoshi, Noriyuki Uryu, Akiyoshi Baba, Yutaka Arima

    2011 Int'l Conference on Solid State Devices and Materials   1031 - 1032   2011.09

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  • Development of Orderly Micro Asperity on Polishing Pad Surface for Chemical Mechanical Polishing (CMP) Process using Anisotropic Etching Reviewed

    Khajornrungruang P., Kimura K., Baba A., Yasuda K., Tanaka A

    Proceedings of GCMM2010   2010.06

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  • Fabrication of microneedle array for transdermal drug delivery Reviewed

    Yuu Shigetome, Yu Taniguchi, Takahiro Ito, Akiyoshi Baba, Tomohiro Hikima, Kakuji Tojo

    3rd International Conference of Asian Society for Precision Engineering and Nanotechnology   2009.11

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  • Development of Periodically Arrayed Micro Pyramid Asperity on Polishing Pad Surface for CMP Process Using Lithography Reviewed

    Keiichi Kimura, Akiyoshi Baba, Naoaki Takahashi, Yuichi Hashiyama, Keisuke Yasuda

    3rd International Conference of Asian Society for Precision Engineering and Nanotechnology   2009.11

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  • Simple fabrication of gated field electron emitter using vertical thin film induced by ion beam irradiation Reviewed

    T. Yoshida,M. Nagao,A. Baba,T. Asano,S. Kanemaru

    J. Vac. Sci. Technol. B   27 ( 2 )   729 - 734   2009.02

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  • Improved near-infrared sensitivity of a back-side illuminated image sensor with a metal reflector Reviewed

    Tetsuya Ariyoshi,Shozo Morita,Akiyoshi Baba,Yutaka Arima

    IEICE Electron. Express   6 ( 6 )   341 - 346   2009.02

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  • Simple fabrication of gated field electron emitter using vertical thin film induced by ion beam irradiation Reviewed

    T. Yoshida,M. Nagao,A. Baba,T. Asano,S. Kanemaru

    21th International Vacuum Nanoelectronics Conference   32 - 33   2008.07

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    Poland   Wroclaw   2008.07.13  -  2008.07.17

  • Fabrication of Vertical Thin Film FEA Using Ion-Induced Bending Technique Reviewed

    Tomoya Yoshida,Chiaki Yasumuro,Masayoshi Nagao,Seigo Kanemaru,Akiyoshi Baba,and Tanemasa Asano

    Proceedings of The 14th International Display Workshops   3   2209 - 2212   2007.12

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    札幌   2007.12.05  -  2007.12.07

  • Statistical Investigation on the Design of Field Emitter Array Reviewed

    Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

    19th International Vacuum Nanoelectronics Conference & 50th International Field Emission Symposium   43 - 44   2006.07

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    China   Guilin   2006.07.17  -  2006.07.20

  • Fabrication of a Gated Cold Cathode by Using the Inkjet Embedding method Reviewed

    Akiyoshi Baba,Tanemasa Asano

    Jpn. J. Appl. Phys   45 ( 6B )   5631 - 5636   2006.04

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  • Properties of Ink-Droplet Formation in Double-Gate Electrospray Reviewed

    Yuji Ishida,Keigo Sogabe,Kazunori Hakiai,Akiyoshi Baba,Tanemasa Asano

    Jpn. J. Appl. Phys.   45 ( 8A )   6475 - 6480   2006.04

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  • Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment Reviewed

    Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

    J. Vac. Sci. Technol. B   24 ( 2 )   932 - 935   2006.04

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  • Fabrication of a Gated Cold Cathode by Using the Inkjet Embedding Method Reviewed

    Akiyoshi Baba,Tanemasa Asano

    2005 International Microprocesses and Nanotechnology Conference   278 - 279   2005.10

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    東京   2005.10.25  -  2005.10.28

  • Gate Controlled Electrostatic Droplet Ejection Reviewed

    Yuji Ishida,Keigo Sogabe,Kazunori Hakiai,Akiyoshi Baba,Tanemasa Asano

    2005 International Microprocesses and Nanotechnology Conference   280 - 281   2005.10

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    東京   2005.10.25  -  2005.10.28

  • Fabrication of Gated cold cathode Using Standing Thin Film Induced by Ion-Beam Bombardment Reviewed

    Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

    18th International Vacuum Nanoelectronics Conference   38 - 39   2005.07

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    England   Oxford   2005.07.10  -  2005.07.14

  • Fabrication of Gated Carbon Black Field Electron Emitter Using Inkjet Printing Reviewed

    Akiyoshi Baba,Yuji Ishida,Kazunori Hakiai,Tanemasa Asano

    18th International Vacuum Nanoelectronics Conference   42 - 43   2005.07

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    England   Oxford   2005.07.10  -  2005.07.14

  • Fabrication of Micro Field Emitter Tip Using Ion-Beam Irradiation-Induced Self-Standing of Thin Films Reviewed

    Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

    Jpn. J. Appl. Phys   44 ( 7B )   5744 - 5748   2005.04

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  • Electrostatic Droplet Ejection Using Planar Needle Inkjet Head Reviewed

    Kazunori Hakiai,Yuji Ishida,Akiyoshi Baba,Tanemasa Asano

    Jpn. J. Appl. Phys.   44 ( 7B )   5781 - 5785   2005.04

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  • Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization Reviewed

    Yuji Ishida,Kazunori Hakiai,Akiyoshi Baba,Tanemasa Asano

    Jpn. J. Appl. Phys.   44 ( 7B )   5786 - 5790   2005.04

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  • Fabrication of Micro Field Emitter Tip Using Ion-Beam Irradiation-Induced Self-Standing of Thin Film Reviewed

    Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

    2004 International Microprocesses and Nanotechnology Conference   328 - 329   2004.10

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    Osaka   2004.10.27  -  2004.10.29

  • Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization Reviewed

    Yuji Ishida,Kazunori Hakiai,Kazunari Matsuzaki,Akiyoshi Baba,Tanemasa Asano

    2004 International Microprocesses and Nanotechnology Conference   28 - 29   2004.10

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    Osaka   2004.10.27  -  2004.10.29

  • Measurement of Electron Energy Distribution Obtained from Wedge Type Silicon Emitter Array Reviewed

    Katsuya Higa,Akiyoshi Baba,Tanemasa Asano

    2004 International Microprocesses and Nanotechnology Conference   258 - 259   2004.10

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    Osaka   2004.10.27  -  2004.10.29

  • Electrostatic Droplet Ejection Using Planar Needle Inkjet Head Reviewed

    Kazunori Hakiai,Yuji Ishida,Kazunari Matsuzaki,Akiyoshi Baba,Tanemasa Asano

    2004 International Microprocesses and Nanotechnology Conference   30 - 31   2004.10

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    Osaka   2004.10.27  -  2004.10.29

  • Reduction of the Gate-Oxide/poly-Si Interface Roughness by Microwave-Plasma Oxidation and Its Impact on TFT Performance Reviewed

    Chihiro Shin,Akiyoshi Baba,Tanemasa Asano

    2004 Int. Workshops on Active-Matrix Liquid-Crystal Displays   317 - 320   2004.08

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    Tokyo   2004.08.25  -  2004.08.27

  • Ultra-High Electron Emission Efficiency from Defect Control Polyimide Tunnel Cathode Reviewed

    Akiyoshi Baba,Tomoya Yoshida,Tanemasa Asano

    17th International Vacuum Nanoelectronics Conference   104 - 105   2004.07

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    U.S.A.   Massachusetts   2004.07.11  -  2004.07.16

  • Feasibility of Inkjet Printing for Field Electron Emitter Fabrication Reviewed

    Akiyoshi Baba,Yuji Ishida,Tomoya Yoshida,Kazunori Hakiai,Kazunari Matsuzaki,Tanemasa Asano

    17th International Vacuum Nanoelectronics Conference   272 - 273   2004.07

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    USA   Cambridge   2004.07.11  -  2004.07.16

  • Increase in Emission Current after High-Frequency Low-Voltage Pulses Application Observed for Gated Nano-Pillar Cathode Reviewed

    Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

    17th International Vacuum Nanoelectronics Conference   258 - 259   2004.07

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    U.S.A.   Massachusetts   2004.07.11  -  2004.07.16

  • Field Emission Characteristics of Defect-Controlled Polyimide Tunneling Cathode Reviewed

    Akiyoshi Baba,Tomoya Yoshida,Tanemasa Asano

    J. Vac. Sci. & Technol. B   22 ( 3 )   1353 - 1357   2004.04

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  • Field Electron Emission Inkjet-Printed Carbon Black Reviewed

    Akiyoshi Baba,Tomoya Yoshida,Kazunari Matsuzaki,Yuji Ishida,Tanemasa Asano

    Jpn. J. Appl. Phys.   43 ( 6B )   3923 - 3927   2004.04

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  • Increased Emission Efficiency of Gated Cold Cathode with Carbonic Nano-Pillars Reviewed

    Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

    Jpn. J. Appl. Phys.   43 ( 6B )   3901 - 3905   2004.04

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  • Gated Cold Cathode Array with Carbonic Nano-Pillars Formed by O2 RIE for FED Application Reviewed

    Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

    10th Int. Display Workshops   1231 - 1234   2003.12

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    Fukuoka   2003.12.03  -  2003.12.05

  • Gate Oxide Integrity of Microwave-Plasma-Grown Silicon Oxide Reviewed

    Akiyoshi Baba,Chihiro Shin,Tanemasa Asano

    10th Int. Display Workshops   439 - 442   2003.12

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    Fukuoka   2003.12.03  -  2003.12.05

  • Planer Electrostatic Inkjet Device with Gate Electrode Reviewed

    Kazunari Matsuzaki,Yuji Ishida,Atsunobu Yoshida,Akiyoshi Baba,Tanemasa Asano

    2003 International Microprocesses and Nanotechnology Conference   190 - 191   2003.10

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    Tokyo   2003.10.29  -  2003.10.31

  • Field Electron Emission from Carbon Black Prepared by Inkjet Printing Reviewed

    Akiyoshi Baba,Tomoya Yoshida,Kazunari Matsuzaki,Yuji Ishida,Tanemasa Asano

    2003 International Microprocesses and Nanotechnology Conference   300 - 301   2003.10

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    Tokyo   2003.10.29  -  2003.10.31

  • Increased Emission Efficiency of Gated Cold Cathode with Carbonic Nano-Pillars Reviewed

    Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

    2003 International Microprocesses and Nanotechnology Conference   188 - 189   2003.10

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    Tokyo   2003.10.29  -  2003.10.31

  • Electrostatic Inkjet Head Fabricated by Anodization of Si Reviewed

    Yuji Ishida,Kazunari Matsuzaki,Akiyoshi Baba,Tanemasa Asano

    2003 International Microprocesses and Nanotechnology Conference   302 - 303   2003.10

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    Tokyo   2003.10.29  -  2003.10.31

  • Self-Aligned Fabrication of Gated Organic Nano-Pillar Cold Cathode Reviewed

    Akiyoshi Baba,Tomoya Yoshida,Tanemasa Asano

    16th International Vacuum Microelectronics Conference   17 - 18   2003.07

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    Osaka   2003.07.07  -  2003.07.11

  • Field Emission Characteristics of Defect-Controlled Polyimide Tunneling Cathode Reviewed

    Akiyoshi Baba,Tomoya Yoshida,Tanemasa Asano

    16th International Vacuum Microelectronics Conference   267 - 268   2003.07

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    Osaka   2003.07.07  -  2003.07.11

  • Micro Field Emitter with Nano-Pillarets Formed by RIE of Photoresist Reviewed

    Akiyoshi Baba,Tomoya Yoshida,Tanemasa Asano

    Jpn. J. Appl. Phys   42 ( 6B )   552 - 556   2003.04

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  • インクジェット法で作製したカーボンブラックからの電界電子放出

    馬場昭好,吉田知也,石田雄二,浅野種正

    信学技報 Technical Report of IEICE   37 - 42   2003.04

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  • Field Emission from Metal Particles Bound with a Photoresist Reviewed

    Akiyoshi Baba,Tanemasa Asano

    J. Vac. Sci. & Technol. B   21 ( 1 )   552 - 556   2003.01

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  • MIM Cold Cathode Using Ion-Beam Irradiated Polyimide as Tunneling Insulator Reviewed

    Akiyoshi BABA,Tomoya YOSHIDA,Tanemasa ASANO

    9th Int. Display Workshops   1049 - 1052   2002.12

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    Hiroshima   2002.12.04  -  2002.12.06

  • Micro Field Emitter with Nano-Pillarets Formed by RIE of Photoresist Reviewed

    Akiyoshi BABA,Tomoya YOSHIDA,Tanemasa ASANO

    2002 International Microprocesses and Nanotechnology Conference   332 - 333   2002.11

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    Tokyo   2002.11.06  -  2002.11.08

  • Field Electron Emission from Gated Organic Emitter Tips Prepared Using Stamping Technique Reviewed

    Akiyoshi BABA,Kouichi TSUBAKI,Tanemasa ASANO

    15th International Vacuum Microelectronics Conference & 48th International Field Emission Symposium   2002.07

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    Lyon, France   2002.07.07  -  2002.07.11

  • Easy Release of the Mold in an Imprinting Method Using Ion Beam Modification of Photoresist Surface Reviewed

    Akiyoshi Baba,Masakazu Iwamoto,Kouichi Tsubaki,Tanemasa Asano

    Jpn. J. Appl. Phys.   41 ( 6B )   4190 - 4193   2002.06

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  • RIEにより作製した有機物針状突起群を電子源とする三極素子の作製

    吉田知也,馬場昭好,浅野種正

    信学技報 Technical Report of IEICE   23 - 28   2002.04

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  • Easy Removal of Mold for Imprint Lithography by Ion Beam Modification of Photoresist Surface Reviewed

    Akiyoshi BABA,Masakazu IWAMOTO,Kouichi TSUBAKI,Tanemasa ASANO

    2001 International Microprocesses and Nanotechnology Conference   96 - 97   2001.11

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    松江   2001.10.31  -  2001.11.02

  • Field Emission from Nano-Protrusion Fabricated Using Nano-Stamp Technique Reviewed

    Akiyoshi BABA,Kouichi TSUBAKI,Tanemasa ASANO

    2001 International Microprocesses and Nanotechnology Conference   196 - 197   2001.11

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    松江   2001.10.31  -  2001.11.02

  • Field Emission from Nano-Pillarets Prepared by Reactive Ion Etching of Organic Materials Reviewed

    Akiyoshi BABA,Tanemasa ASANO

    21st Int. Display Research Conference in conjunction with the 8th Int. Display Workshops   1185 - 1188   2001.10

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    名古屋   2001.10.16  -  2001.10.19

  • Field Emission from Metal-Particle Bound with a Photoresist Reviewed

    Akiyoshi BABA,Tanemasa ASANO

    14th International Vacuum Microelectronics Conference   235 - 236   2001.08

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    UC Davis, California, USA   2001.08.12  -  2001.08.16

  • 有機材料のスタンプ形成による高密度電子源ティップアレイの作製

    椿弘一,馬場昭好,浅野種正

    信学技報 Technical Report of IEICE   21 - 26   2001.04

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  • Field Emission from Pd Fine-Particle Film Reviewed

    Akiyoshi BABA,Tanemasa ASANO

    The Seventh International Display Workshops IDW '00   979 - 982   2000.12

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    神戸   2000.11.29  -  2000.12.01

  • Fabrication of Gated Field Emitter from Wedge Array Prepared by Stamp Technology Reviewed

    Akiyoshi BABA,Kouichi TSUBAKI,Masakazu IWAMOTO,Tanemasa ASANO

    2000 International Microprocesses and Nanotechnology Conference   128 - 129   2000.07

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    東京   2000.07.11  -  2000.07.13

  • Imprint Lithography Using Triple-Layer-Resist and its Application to MOSFET Fabrication Reviewed

    Hiroyuki NAKAMURA,Akiyoshi BABA,Tanemasa ASANO

    2000 International Microprocesses and Nanotechnology Conference   232 - 233   2000.07

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    東京   2000.07.11  -  2000.07.13

  • Imprint lithography Using Triple-Layer-Resist and Its Application to Metal-Oxide-Silicon Field-Effect-Transistor Fabrication Reviewed

    Hiroyuki Nakamura,Akiyoshi Baba,Tanemasa Asano

    Japanese Journal of Applied Physics Part 1   39 ( 12B )   7080 - 7080   2000.04

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  • Stamp Technology for Fabrication of Field Emitter from Organic Material Reviewed

    Akiyoshi Baba,Masafumi Hizukuri,Masakazu Iwamoto,Tanemasa Asano

    Journal of Vacuum Science and Technology B   18 ( 2 )   877 - 879   2000.04

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  • 絶縁体でバインドされたパラジウム微粒子膜からの電界電子放出

    馬場昭好,浅野種正

    信学技報 Technical Report of IEICE   25 - 30   2000.04

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  • Fabrication of Field Emitters from Organic Materials Using a Stamp Technology Reviewed

    Akiyoshi Baba,Masafumi Hizukuri,Masakazu Iwamoto,Tanemasa Asano

    The Sixth International Display Workshops   919 - 922   1999.12

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    Sendai   1999.12  -  1999.12

  • Fabrication of Carbon-Based Field Emitters Using a Stamp Technology Reviewed

    Akiyoshi Baba,Masafumi Hizukuri,Masakazu Iwamoto,Tanemasa Asano

    1999 International Microprocesses and Nanotechnology Conference   182 - 183   1999.07

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    Yokohama   1999.07.06  -  1999.07.08

  • Field emission from an ion-beam modified polyimide film Reviewed

    Akiyoshi Baba,Katsuya Higa,Tanemasa Asano

    Japanese Journal of Applied Physics   38 ( 3A )   L261 - L263   1999.04

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  • Fabrication of Carbon-Based Field Emitters Using stamp Technology Reviewed

    Akiyoshi Baba,Masafumi Hizukuri,Masakazu Iwamoto,Tanemasa Asano

    Japanese Journal of Applied Physics   38 ( 12B )   7203 - 7207   1999.04

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  • 塗布性有機膜のイオン照射改質による炭素系電子源材料 Reviewed

    浅野種正,馬場昭好

    ディスプレイ アンド イメージング   1 ( 8 )   61 - 68   1999.04

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  • Field Emission from an Ion-Beam Modified Polyimide Film Reviewed

    Akiyoshi Baba,Katsuya Higa,Tanemasa Asano

    Japanese Journal of Applied Physics   38 ( 3A )   L261 - L263   1999.04

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  • スタンプ法による有機材料の構造形成と電界放出型微小電子源への応用

    馬場昭好,岩本正和,浅野種正

    信学技報 Technical Report of IEICE   25 - 30   1999.04

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  • A flexible field emitter made by ion-beam modification of polyimide film: Reviewed

    Akiyoshi Baba,Katsuya Higa,Tanemasa Asano

    The Fifth International Display Workshops   61 - 64   1998.12

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    Kobe   1998.12  -  1998.12

  • 有機物イオン照射改質によるマイクロコールドエミッタ材料の創製

    浅野種正,馬場昭好,比嘉勝也

    信学技報 Technical Report of IEICE   29 - 36   1998.04

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  • Deep Level of Iron-Hydrogen Complex in Silicon Reviewed

    Taizoh Sadoh,K. Tsukamoto,A. Baba,D. Bai,A. Kenjo,T. Tsurushima

    J. Appl. Phys.   82   3828 - 3828   1997.04

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  • Deep States in Silicon on Sapphire by Transient-Current Spectroscopy Reviewed

    T. Sadoh,A. Matsushita,Y.-Q. Zhang,D.-J. Bai,A. Baba,A. Kenjo,T. Tsurushima

    J. Appl. Phys.   82   5262 - 5262   1997.04

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  • Growth Kinetics of CoSi Formed by Ion Beam Irradiation at Room Temperature Reviewed

    Jounal of Applied Physics   ( 82 )   5480 - 5480   1997.04

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  • Behavior of Radiation-Induced Defects and Amorphization in Silicon Crystal Reviewed

    Nuclear Instrument & Methods in Physics Research B   ( 121 )   299 - 299   1997.04

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  • Simplified Evaluation of Displacement Effect Distribution in Silicon Irradiated with Low-Energy Ions

    Dong-Ju Bai,Tomohiro Kawase,Akiyoshi Baba,Atsushi Kenjo,Taizoh Sadoh,Hiroshi Nakashima,Hiroshi Mori,Toshio Tsurushima

    Research Reports on Information Science and Electrical Engineering of Kyushu University   2   59 - 59   1997.04

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  • 低エネルギーイオン照射によるシリコンの非晶質化

    白冬菊,河瀬智宏,馬場昭好,権丈淳,佐道泰造,中島寛,森紘,鶴島稔夫

    九州大学大学院システム情報科学研究科報告   2 ( 1 )   1997.04

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  • イオンビーム照射によるコバルトシリサイド形成機構

    馬場昭好,荒牧宏隆,阿部孝幸,松下篤志,佐道泰造,権丈淳,森紘,中島寛,鶴島稔夫

    九州大学中央分析センター報告   ( 15 )   1997.04

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  • Effect of Energy Transport with Recoil Atoms on Deposited Energy Distribution in Silicon Irradiated with Energetic Ions

    Dong-Ju Bai,Akiyoshi Baba,Atsushi Kenjo,Taizoh Sadoh,Hiroshi Nakashima,Hiroshi Mori,Toshio Tsurushima

    Research Reports on Information Science and Electrical Engineering of Kyushu University   1997.04

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  • Evaluation of Damage Induced by Low-Energy Ion Irradiation in Silicon

    Akiyoshi Baba,Taizoh Sadoh,Atsushi Kenjo,Hiroshi Nakashima,Hiroshi Mori,Toshio Tsurushima

    Memoirs of the Faculty of Engineering Kyushu University   55   127 - 127   1995.04

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  • Behavior of Defects Induced by Low-Energy Ions in Silicon Films Reviewed

    Taizoh Sadoh,Hironori Takeshita,Akiyoshi Baba,Atsushi Kenjo,Hiroshi Nakashima,Toshio Tsurushima

    Jpn. J. Appl. Phys.   33   7151 - 7151   1994.04

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▼display all

Conference Prsentations (Oral, Poster)

  • 海水中におけるIS-FETイオンセンサのヒステリシス特性の原因調査と抑制方法

    大西 浩輝、Sethavut Duangchan、野口 科端稀, 佐々木 翼

    第36回「センサ・マイクロマシンと応用システム」シンポジウム 

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    Event date: 2019.11.19 - 2019.11.21   Language:Japanese  

  • スパッタエッチングによる表面平坦化の活性化接合への応用

    永田 将大,白浜 亮弥,ドゥアンチャン セタヴット,馬場 昭好

    第9回集積化MEMSシンポジウム 

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    Event date: 2017.10.31 - 2017.11.02   Language:Japanese  

  • 液中半導体センサーパッシベーション膜の厚膜化による配線腐食低減

    馬場 祐輔,種吉 郁文,山口 隆貴,二宮 尚輝,馬場 昭好

    第9回集積化MEMSシンポジウム 

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    Event date: 2017.10.31 - 2017.11.02   Language:Japanese  

  • スパッタエッチングにより極薄化したSiO2接合層を持つSOD基板の作製

    永田 将大,白浜 亮弥,Duangchan Sethavut,馬場 昭好

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.09.05 - 2017.09.08   Language:Japanese  

  • 海水中における電気化学反応の抑制のためのパッシベーション膜の検討

    馬場 祐輔,種吉 郁文,馬場 昭好

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.09.05 - 2017.09.08   Language:Japanese  

  • 表面活性化接合における接合面積拡大のためのイオン条件の検討

    白浜 亮弥,Duangchan Sethavut,村山 智紀,濱田 爽志,馬場 昭好

    第8回集積化MEMSシンポジウム 

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    Event date: 2016.10.24 - 2016.10.26   Language:Japanese  

  • 生分解性マイクロニードルアレイの作製

    情報システム専攻

    2009年応用物理学会九州支部学術講演会 

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    Event date: 2009.11.21 - 2009.11.22   Language:Japanese  

  • 深溝構造を持つ結晶シリコン太陽電池の作製

    情報システム専攻

    2009年応用物理学会九州支部学術講演会 

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    Event date: 2009.11.21 - 2009.11.22   Language:Japanese  

  • 静電アクチュエーターを有する静電インクジェットノズルの作製

    情報システム専攻

    2009年応用物理学会九州支部学術講演会 

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    Event date: 2009.11.21 - 2009.11.22   Language:Japanese  

  • 高耐圧素子における終端構造の作製

    情報システム

    第62回電気関係学会九州支部連合大会 

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    Event date: 2009.09.28 - 2009.09.29   Language:Japanese  

  • マイクロ片持ちはりの振動における構造-流体-静電界連成効果に関する研究

    情報システム

    機械学会九州支部第62期講演会 

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    Event date: 2009.03.18   Language:Japanese  

  • 深溝構造を持つシリコン太陽電池の提案

    情報システム専攻・電子情報工学分野

    平成21年電気学会全国大会 

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    Event date: 2009.03.17 - 2009.03.19   Language:Japanese  

  • 可動針を有する静電インクジェットノズルの提案

    情報システム

    平成21年電気学会全国大会 

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    Event date: 2009.03.17 - 2009.03.19   Language:Japanese  

  • MEMS技術を応用したCMP用マイクロパターンパッドの研究(第2報)

    情報システム専攻・機械情報工学分野

    2009年度精密工学会春季大会学術講演会 

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    Event date: 2009.03.11 - 2009.03.13   Language:Japanese  

  • 裏面深堀によるpn接合型シリコン近赤外線受光素子の高感度化

    情報システム専攻・電子情報工学分野

    第61回電気関係学会九州支部連合大会 

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    Event date: 2008.09.24 - 2008.09.25   Language:Japanese  

  • フェムトリットル液滴吐出可能な静電針型インクジェットノズルの一体形成

    情報システム・電子情報工学分野

    第61回電気関係学会九州支部連合大会 

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    Event date: 2008.09.24 - 2008.09.25   Language:Japanese  

  • MEMS技術を応用したCMP用マイクロパターンパッドの研究(第1報)-微小ピラミッド型パターンパッドの製作法-

    情報システム専攻・機械情報工学分野

    2008年度精密工学会秋季大会学術講演会 

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    Event date: 2008.09.17 - 2008.09.19   Language:Japanese  

  • イオン照射薄膜直立現象を利用して作製したVTF(Vertical Thin Film)電子源の先鋭化法の検討

    産総研吉田知也

    第68回応用物理学会学術講演会 

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    Event date: 2007.09.04 - 2007.09.08   Language:Japanese  

  • インクジェット法を用いたカーボンナノチューブ電子源の作製

    第54回応用物理学関係連合講演会 

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    Event date: 2007.03.27 - 2007.03.30   Language:Japanese  

  • イオン照射による薄膜の変形現象を利用して作製した電界放出型電子源

    電子情報通信学会技術研究報告(電子デバイス研究会) 

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    Event date: 2006.04.17 - 2006.04.18   Language:Japanese  

  • Niインプリント法による非晶質SiGe薄膜の固相成長促進

    第53回応用物理学関係連合講演会 

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    Event date: 2006.03.22 - 2006.03.26   Language:Japanese  

  • 電子源設計に関する統計的考察

    第53回応用物理学関係連合講演会 

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    Event date: 2006.03.22 - 2006.03.26   Language:Japanese  

  • ゲート電極付き静電型インクジェットノズルによる液滴吐出

    第53回応用物理学関係連合講演会 

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    Event date: 2006.03.22 - 2006.03.26   Language:Japanese  

  • イオン照射による薄膜の変形現象を利用して作製したゲート付き電子源の電子放出特性

    第66回応用物理学会学術講演会 

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    Event date: 2005.09.07 - 2005.09.11   Language:Japanese  

  • シリコン針形エミッタアレイからの放出電子エネルギー測定とその計測計の検討

    第66回応用物理学会学術講演会 

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    Event date: 2005.09.07 - 2005.09.11   Language:Japanese  

  • Niインプリント法による非晶質SiGe薄膜/絶縁体の種付け固相成長

    第66回応用物理学会学術講演会 

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    Event date: 2005.09.07 - 2005.09.11   Language:Japanese  

  • インクジェット法により作製したゲート電極付きカーボンブラック電子源からの電子放出特性

    本人

    第66回応用物理学会学術講演会 

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    Event date: 2005.09.07 - 2005.09.11   Language:Japanese  

  • インクジェット法によるカーボンブラック含有インクのゲート穴への埋め込み

    本人

    第52回応用物理学関係連合講演会 

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    Event date: 2005.03.29 - 2005.04.01   Language:Japanese  

  • イオン照射による薄膜の変形現象を用いた微小電子源の作製

    第52回応用物理学関係連合講演会 

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    Event date: 2005.03.29 - 2005.04.01   Language:Japanese  

  • 方形波電圧による静電インクジェット描画

    第52回応用物理学関係連合講演会 

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    Event date: 2005.03.29 - 2005.04.01   Language:Japanese  

  • 静電インクジェットにおける液滴吐出検出

    第52回応用物理学関係連合講演会 

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    Event date: 2005.03.29 - 2005.04.01   Language:Japanese  

  • FED応用を目指した静電吐出型インクジェット・ノズルの研究

    マイクロ化総合技術センター 浅野種正

    カーボンナノチューブ-FED プロジェクト公開シンポジウム・第3回真空ナノエレクトロニクスシンポジウム 

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    Event date: 2005.03.06 - 2005.03.07   Language:Japanese  

  • インクジェット法による高精度配列電子源アレイの作製

    本人

    電子情報通信学会技術研究報告会(電子デバイス研究会) 

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    Event date: 2004.12.16 - 2004.12.17   Language:Japanese  

  • 静電型針状Siインクジェットヘッドによる描画

    第65回応用物理学会学術講演会 

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    Event date: 2004.09.01 - 2004.09.04   Language:Japanese  

  • 部分的表面自由エネルギー変化による吐出液滴の精細パターニングの可能性

    本人

    第65回応用物理学会学術講演会 

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    Event date: 2004.09.01 - 2004.09.04   Language:Japanese  

  • 有機物ナノピラーを電子源とする三極素子の破壊機構の調査

    第65回応用物理学会学術講演会 

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    Event date: 2004.09.01 - 2004.09.04   Language:Japanese  

  • インクジェット法による電界電子放出源の作製

    本人

    第51回応用物理学関係連合講演会 

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    Event date: 2004.03.28 - 2004.03.31   Language:Japanese  

  • 陽極化成法で作製した針状Siインクジェットヘッドからの液滴静電吐出

    第51回応用物理学関係連合講演会 

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    Event date: 2004.03.28 - 2004.03.31   Language:Japanese  

  • マイクロ波励起プラズマ酸化によるpoly-Si/酸化膜界面ラフネスの低減

    第51回応用物理学関係連合講演会 

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    Event date: 2004.03.28 - 2004.03.31   Language:Japanese  

  • 高周波低電圧パルス印加によるナノピラー電子源からの放出電流の増加

    第51回応用物理学関係連合講演会 

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    Event date: 2004.03.28 - 2004.03.31   Language:Japanese  

  • 低電圧パルス印加法による欠陥導入ポリイミドMIM型冷陰極のフォーミング

    本人

    第51回応用物理学関係連合講演会 

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    Event date: 2004.03.28 - 2004.03.31   Language:Japanese  

  • ウェッジ形Siエミッタアレイからの電界放出電子のエネルギー測定の検討

    第51回応用物理学関係連合講演会 

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    Event date: 2004.03.28 - 2004.03.31   Language:English  

  • インクジェット法で作製したカーボンブラックからの電界電子放出

    本人

    電子情報通信学会技術研究会電子デバイス研究会 

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    Event date: 2003.12.12   Language:Japanese  

  • マイクロ波プラズマで成長したSi酸化膜のゲート酸化膜への適合性

    第29回応用物理学会九州支部学術講演会 

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    Event date: 2003.12.06   Language:Japanese  

  • 有機材料より形成した炭素系針状突起群を持つ三極電子源のリーク電流の低減

    第64回応用物理学会学術講演会 

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    Event date: 2003.08.30 - 2003.09.02   Language:Japanese  

  • 一次元配置した針つきノズルからの静電誘引液体吐出

    第64回応用物理学会学術講演会 

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    Event date: 2003.08.30 - 2003.09.02   Language:Japanese  

  • 改質ポリイミドトンネル冷陰極からの放出電子エネルギー分布

    本人

    第64回応用物理学会学術講演会 

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    Event date: 2003.08.30 - 2003.09.02   Language:Japanese  

  • 自己整合プロセスで作製した有機物針状突起群を電子源とする三極素子の作製

    第50回応用物理学関係連合講演会 

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    Event date: 2003.03.27 - 2003.03.30   Language:Japanese  

  • 欠陥導入ポリイミドトンネル冷陰極の電子放射特性

    第50回応用物理学関係連合講演会 

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    Event date: 2003.03.27 - 2003.03.30   Language:Japanese  

  • Si表面に作製した一次元配置ノズルからの液体静電吐出

    第50回応用物理学関係連合講演会 

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    Event date: 2003.03.27 - 2003.03.30   Language:Japanese  

  • RIEにより作製した有機物針状突起群を電子源とする三極素子の作製

    電子情報通信学会 電子デバイス研究会 

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    Event date: 2002.12.12 - 2002.12.13   Language:Japanese  

  • イオンビーム改質したポリイミドをトンネル絶縁層とするMIM型電子源の作製

    第63回応用物理学会学術講演会 

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    Event date: 2002.09.24 - 2002.09.27   Language:Japanese  

  • 有機物ナノティップ電子源アレイの三極構造化

    応用物理学関係連合講演会 

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    Event date: 2002.03.27 - 2002.03.30   Language:Japanese  

  • 有機材料のスタンプ成形による高密度電子源ティップアレイの作製

    電子情報通信学会技術研究会(電子デバイス研究会) 

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    Event date: 2001.12.13 - 2001.12.14   Language:Japanese  

  • 金属微粒子混入フォトレジスト膜の電子放出特性の改善

    応用物理学会学術講演会 

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    Event date: 2001.09.11 - 2001.09.14   Language:Japanese  

  • 改質有機電子源チップの微細化による電子放出特性の改善

    応用物理学会学術講演会 

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    Event date: 2001.09.11 - 2001.09.14   Language:Japanese  

  • 酸素プラズマ処理した有機材料からの電界電子放出

    応用物理学会学術講演会 

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    Event date: 2001.09.11 - 2001.09.14   Language:Japanese  

  • スタンプ法で作製した改質有機電子源の三極構造化

    第48回応用物理学関係連合講演会 講演予稿集 

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    Event date: 2001.03.28 - 2001.03.31   Language:Japanese  

  • 絶縁体でバインドされた金属微粒子からの電界電子放出

    第48回応用物理学関係連合講演会 講演予稿集 

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    Event date: 2001.03.28 - 2001.03.31   Language:Japanese  

  • 絶縁体でバインドされたパラジウム微粒子膜からの電界電子放出

    電子情報通信学会技術研究報告(電子デバイス研究会) 

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    Event date: 2000.12.13 - 2000.12.14   Language:Japanese  

  • スタンプ法で作製した改質有機微小電子源の三極構造化

    平成12年度応用物理学会九州支部講演会講演予稿集 

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    Event date: 2000.12.02 - 2000.12.03   Language:Japanese  

  • Pd微粒子膜からの電界電子放出

    第61回応用物理学会学術講演会 

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    Event date: 2000.09.03 - 2000.09.07   Language:Japanese  

  • ビーム改質有機エミッタの初期有機材料による電子放出特性の違い

    第61回応用物理学会学術講演会 

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    Event date: 2000.09.03 - 2000.09.07   Language:Japanese  

  • イオンビーム改質および熱改質ポリイミド膜の電気伝導特性

    第47回応用物理学関係連合講演会 

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    Event date: 2000.03.28 - 2000.03.31   Language:Japanese  

  • スタンプ法による有機材料の構造形成と電界放出型微小電子源への応用

    電子情報通信学会電子デバイス研究会 

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    Event date: 1999.12.13 - 1999.12.14   Language:Japanese  

  • スタンプ法による微小電子源の作製

    応用物理学会九州支部講演会 

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    Event date: 1999.12.04 - 1999.12.05   Language:Japanese  

  • イオンビーム改質したポリイミド膜の電気伝導特性

    第60回応用物理学会学術講演会 

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    Event date: 1999.09.01 - 1999.09.04   Language:Japanese  

  • スタンプ法によるフィールドエミッターの作製

    本人

    第46回応用物理学関係連合講演会 

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    Event date: 1999.03.28 - 1999.03.31   Language:Japanese  

  • スタンプ法によるポイント型フィールドエミッタアレイの作製

    第47回応用物理学関係連合講演会 

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    Event date: 1999.03.28 - 1999.03.31   Language:Japanese  

  • イオンビーム改質したポリイミドフィルムからの電界放出

    本人

    第59回応用物理学会学術講演会 

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    Event date: 1998.09.15 - 1998.09.18   Language:Japanese  

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Contracts

  • パワーデバイスおよびMEMSセンサーに関する製造プロセスの研究開発ならびに評価

    2014.04 - 2017.03

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    Grant type:Joint research

Social activity outside the university

  • 産学連携製造中核人材育成セミナー(遠隔型)

    Role(s):Presenter, Chief editor, Lecturer, Planner, Organizing member, Demonstrator

    2022.03.08 - 2022.03.11

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    Audience: General

    Type:Seminar, workshop

  • 産学連携製造中核人材育成セミナー(実参加型)

    Role(s):Presenter, Chief editor, Lecturer, Planner, Organizing member, Demonstrator

    2022.01.11 - 2022.01.14

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    Audience: General

    Type:Seminar, workshop

  • 産学連携製造中核人材育成セミナー(実参加型)

    Role(s):Presenter, Chief editor, Lecturer, Planner, Organizing member, Demonstrator

    2021.11.09 - 2021.11.12

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    Audience: General

    Type:Seminar, workshop

  • 産学連携製造中核人材育成セミナー(実参加型)

    Role(s):Presenter, Chief editor, Lecturer, Planner, Organizing member, Demonstrator

    2021.10.19 - 2021.10.22

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    Audience: General

    Type:Seminar, workshop

  • 産学連携製造中核人材育成セミナー(遠隔型)

    Role(s):Presenter, Chief editor, Lecturer, Planner, Organizing member, Demonstrator

    2021.08.03 - 2021.08.06

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    Type:Seminar, workshop

  • 産学連携製造中核人材育成セミナー(遠隔型)

    Role(s):Presenter, Chief editor, Lecturer, Planner, Organizing member, Demonstrator

    2021.07.27 - 2021.07.30

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    Audience: General

    Type:Seminar, workshop

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