Faculty Profiles - BABA Akiyoshi

Papers - BABA Akiyoshi

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Dependence of sensitivity loss on organic film thickness and influence of cantilever warpage in a piezoelectric wideband acoustic sensor coated with an organic film Reviewed

Kuchiji H., Masumoto N., Morishita K., Hasegawa S., Suzuki T., Baba A.

Japanese Journal of Applied Physics 63 ( 3 ) 2024.03

An efficient polishing process for silicon carbide using ion implantation method Reviewed International journal

Takitani S., Baba A., Nishizawa H., Suzuki K.

Japanese Journal of Applied Physics 63 ( 3 ) 2024.03

Design and Simulation of Piezoelectric Wideband Acoustic Sensor Covered with Organic Film Reviewed International journal

Kuchiji Hiroyuki, Masumoto Naoki, Morishita Kota, Hasegawa Shunta, Takaaki Suzuki, Baba Akiyoshi

1st International Conference on Robotics, Engineering, Science, and Technology, RESTCON 2024 59 - 63 2024.02

Piezoelectric MEMS wideband acoustic sensor coated by organic film Reviewed International journal

Kuchiji H., Masumoto N., Baba A.

Japanese Journal of Applied Physics 62 2023.06

Piezoelectric MEMS Wideband Acoustic Sensor Coated by Organic Film Reviewed International journal

Hiroyuki Kuchiji,Naoki Masumoto,Akiyoshi Baba

Digest of 35th International Microprocesses and Nanotechnology Conference (MNC2022) 11P-4-32 2022.11

Absolute longitudinal distance measurement verification of a standard polystyrene nanoparticle near a surface in water by means of multi-wavelength evanescent field Reviewed

Blattler A., Khajornrungruang P., Suzuki K., Baba A., Goto D.

European Society for Precision Engineering and Nanotechnology, Conference Proceedings - 22nd International Conference and Exhibition, EUSPEN 2022 385 - 388 2022.01

Study on Nanoscale Observatory in Polishing Phenomena applying Optical Evanescent Field

Permpatdechakul Thitipat, Khajornrungruang Panart, Suzuki Keisuke, Baba Akiyoshi

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2021A ( 0 ) 102 - 103 2021.09

Language：Japanese Publishing type：Research paper (conference, symposium, etc.)

The nanoscale polishing phenomena between substrate surface, 105 nm-sized SiO2 particles slurry, and polishing pad during CMP process were experimentally observed and evaluated to identify the main factors which effectively polish a 4H-SiC substrate. The nanoscale polishing phenomena were observed in-situ by our developed compact apparatus applied an optical evanescent field. The observation is able to detect the scattering light from either the nano-abrasive particles or the pad asperities when they react to the surface to being polishing. The nanoparticle motion phenomena, which two conditions (i)only nanoparticles (without pad) and (ii)nanoparticles with pad sliding, on 4H-SiC substrate were observed. According to the observed results, the observed scattering light of nanoparticle on 4H-SiC was the ellipse shape compared with the observing on SiO2 substrate. Furthermore, we could observe the particles moved nearer and then adhered on the surface. Less particle’s Brownian motion when the particle moved nearer to the surface. In case of nanoparticle with pad sliding, we could observe only the scattering light of pad sliding because the scattering light intensity of particle is quite lower than pad. Therefore, approached nanoparticle to 4H-SiC surface phenomena might be one possible role to explain higher polishing rate CMP parameter.

DOI： 10.11522/pscjspe.2021a.0_102

CiNii Research

Study on On-Machine Visualization of Surface Processing Phenomena in Nanoscale

Blattler Aran, Khajornrungruang Panart, Suzuki Keisuke, Baba Akiyoshi

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2021A ( 0 ) 588 - 589 2021.09

Language：Japanese Publishing type：Research paper (conference, symposium, etc.)

An abrasive nanoparticle behavior in chemical mechanical polishing (CMP) process is a three-dimensional (3D) motion near a substrate or reference surface. The height position is a longitudinal distance between the reference surface and nanoparticle, which is a challenge for measuring the height position in a wet condition. Our previous report could estimate the relative height of polystyrene 100 nm particles by applying multi-wavelength evanescent fields, but the absolute height was not confirmed yet. Therefore, in this report, we proposed a design concept for absolute height verification by using the developed nano-step height patterns. The nano-step height was approximately less than hundred nanometers from the reference surface. The nano-step height made from an optical resin that has a refractive index close to water to decrease the scattering light during observing nanoparticles in water. Polystyrene 100 nm particles on the nano-step height were used to estimate the absolute height of nanoparticle. The proposed concept could be used to verify the nanoparticle's absolute height in water, which can be applied to clarify the nanoparticle phenomena during the CMP process in the near future.

DOI： 10.11522/pscjspe.2021a.0_588

CiNii Research

The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate Reviewed International journal

Sethavut Duangchan, Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang

4th IEEE Electron Devices Technology and Manufacturing Conference (EDTM2020) 2020.03

SiN used as a stressor in Germanium-On-Insulator substrate Reviewed International journal

Sethavut Duangchan, Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang

2019 International 3D Systems Integration Conference (3DIC) 2019.10

SiN used as a Stressor in Germanium-On-Insulator Substrate Reviewed International journal

Duangchan S., Yamamoto K., Wang D., Nakashima H., Baba A.

IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019 2019.10

Modulation transfer function analysis of silicon X-ray sensor with trench-structured photodiodes Reviewed

Ariyoshi Tetsuya, Iwasa Jumpei, Takane Yuta, Sakamoto Kenji, Baba Akiyoshi, Arima Yutaka

IEICE Electron. Express 15 ( 11 ) 20180177 - 20180177 2018.06

Fabrication of silicon-on-diamond substrate with an ultrathin SiO<inf>2</inf>bonding layer Reviewed

Nagata M., Shirahama R., Duangchan S., Baba A.

Japanese Journal of Applied Physics 57 ( 6 ) 2018.06

Silicon trench photodiodes on a wafer for efficient X-ray-to-current signal conversion using side-X-ray-irradiation mode Reviewed

57 ( 4 ) 2018.04

Fabrication of Silicon on Diamond Structure with an Ultra-Thin SiO2 Bonding Layer by Sputter Etching Method Reviewed

8D-6-1 2017.11

Estimation of the Conversion Properties of Trench-Structured Silicon X-ray Photodiodes by the Side X-ray Irradiation Method Reviewed

Tetsuya Ariyoshi, Yuta Takane, Jumpei Iwasa, Kenji Sakamoto, Akiyoshi Baba, Yutaka Arima

321 - 322 2017.09

X-ray-to-current signal conversion characteristics of trench-structured photodiodes for direct-conversion-type silicon X-ray sensor Reviewed

56 ( 4 ) 2017.04

High-performance vertical Si PiN diode by hole remaining mechanism Reviewed

129 22 - 28 2017.03

Reduced operating temperature of active layer Si covered by nanocrystalline diamond film Reviewed

28 ( 1 ) 617 - 624 2017.01

Sensitivity Properties of a Direct Conversion Silicon X-ray Sensor with Trench-Structured Photodiodes Reviewed

141 - 142 2016.09

Novel 600 v low reverse recovery loss vertical PiN diode with hole pockets by Bosch deep trench Reviewed

2016-July 295 - 298 2016.07

The Influence of Plasma Conditions on Surface-Activation that Affect the Bonded Area Reviewed

283 - 284 2016.06

Novel 600 V Low Reverse Recovery Loss Vertical PiN Diode with Hole Pockets by Bosch Deep Trench Reviewed

295 - 298 2016.06

The heat performance study of nanocrystal diamond film used in a thin film device Reviewed

2015.09

Design of a MEMS device for scanning profile measurement with three cantilever displacement sensors Reviewed

2015.09

Influential factors in low-temperature direct bonding of silicon dioxide Reviewed

2015.08

The silicon on diamond structure by low-temperature bonding technique Reviewed

2015.05

Finite element analysis using a hierarchal decomposition for the interaction of structure, fluid and electrostatic field in mems Reviewed

1023 - 1028 2015.01

Hierarchal decomposition for the structure-fluid-electrostatic interaction in a microelectromechanical system Reviewed

108 ( 6 ) 429 - 452 2015.01

The effect of surface roughness in SiO2/SiO2 low-temperature bonding Reviewed

B-1-3 2014.12

Finite Element Analysis Using Hierarchal Decomposition for Interaction of Structural, Fluidic and Electrostatic Fields in MEMS Structural Components Reviewed

Daisuke ISHIHARA, Tomoyoshi HORIE, Tomoya NIHO, Akiyoshi BABA

79 ( 804 ) 1291 - 1302 2013.08

Side-Illuminated Color photo Sensor Reviewed

( 52 ) 04CE10 2013.03

2513 Finite element analysis for interaction for structural : fluidic and electrostatic fields in MEMS structural components

SHUKUWA Yusuke, ISHIHARA Daisuke, HORIE Tomoyoshi, NIHO Tomoya

The Proceedings of The Computational Mechanics Conference ( The Japan Society of Mechanical Engineers ) 2013 ( 0 ) _2513 - 1_-_2513-2_ 2013.01

High Efficiency Near-Infrared Detection using Deep-Trench Photo-Diode Invited Reviewed

25th International Microprocesses and Nanotechnology Conference 1-p-7-101 2012.10

Fabrication of a polylactide micro-needle array using transfer mold technique for transdermal drug delivery Invited Reviewed

1-P-7-94 2012.10

Side-Illuminated Color photo Sensor Reviewed

International Conference on Solid State Devices and Materials 144 - 145 2012.09

Finite element analysis for interaction problems of structure, fluid and electrostatic field in micro cantilever beams Invited Reviewed

255 - 260 2012.09

Improved Near-Infrared Sensitivity with a Side-Illuminated Photosensor Reviewed

Tetsuya Ariyoshi, Noriyuki Uryu, Akiyoshi Baba, Yutaka Arima

Jpnese Journal of Applied Physics 51 02BE01 2012.02

Fabrication of pn junction at the wall of deep trench for near-infrared sensor Reviewed

Akiyoshi Baba, Noriyuki Uryu, Senichi Sumi

24th International Microprocesses and Nanotechnology Conference 2011.10

Improved Near-Infrared Sensitivity for a Side-Illuminated Photo Sensor Reviewed

Tetsuya Ariyoshi, Noriyuki Uryu, Akiyoshi Baba, Yutaka Arima

2011 Int'l Conference on Solid State Devices and Materials 1031 - 1032 2011.09

Development of Orderly Micro Asperity on Polishing Pad Surface for Chemical Mechanical Polishing (CMP) Process using Anisotropic Etching Reviewed

Khajornrungruang P., Kimura K., Baba A., Yasuda K., Tanaka A

Proceedings of GCMM2010 2010.06

Development of Periodically Arrayed Micro Pyramid Asperity on Polishing Pad Surface for CMP Process Using Lithography Reviewed

Keiichi Kimura, Akiyoshi Baba, Naoaki Takahashi, Yuichi Hashiyama, Keisuke Yasuda

3rd International Conference of Asian Society for Precision Engineering and Nanotechnology 2009.11

Fabrication of microneedle array for transdermal drug delivery Reviewed

Yuu Shigetome, Yu Taniguchi, Takahiro Ito, Akiyoshi Baba, Tomohiro Hikima, Kakuji Tojo

3rd International Conference of Asian Society for Precision Engineering and Nanotechnology 2009.11

Simple fabrication of gated field electron emitter using vertical thin film induced by ion beam irradiation Reviewed

T. Yoshida,M. Nagao,A. Baba,T. Asano,S. Kanemaru

J. Vac. Sci. Technol. B 27 ( 2 ) 729 - 734 2009.02

Improved near-infrared sensitivity of a back-side illuminated image sensor with a metal reflector Reviewed

Tetsuya Ariyoshi,Shozo Morita,Akiyoshi Baba,Yutaka Arima

IEICE Electron. Express 6 ( 6 ) 341 - 346 2009.02

Simple fabrication of gated field electron emitter using vertical thin film induced by ion beam irradiation Reviewed

T. Yoshida,M. Nagao,A. Baba,T. Asano,S. Kanemaru

21th International Vacuum Nanoelectronics Conference 32 - 33 2008.07

Fabrication of Vertical Thin Film FEA Using Ion-Induced Bending Technique Reviewed

Tomoya Yoshida,Chiaki Yasumuro,Masayoshi Nagao,Seigo Kanemaru,Akiyoshi Baba,and Tanemasa Asano

Proceedings of The 14th International Display Workshops 3 2209 - 2212 2007.12

Statistical Investigation on the Design of Field Emitter Array Reviewed

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

19th International Vacuum Nanoelectronics Conference & 50th International Field Emission Symposium 43 - 44 2006.07

Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment Reviewed

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

J. Vac. Sci. Technol. B 24 ( 2 ) 932 - 935 2006.04

Fabrication of a Gated Cold Cathode by Using the Inkjet Embedding method Reviewed

Akiyoshi Baba,Tanemasa Asano

Jpn. J. Appl. Phys 45 ( 6B ) 5631 - 5636 2006.04

Properties of Ink-Droplet Formation in Double-Gate Electrospray Reviewed

Yuji Ishida,Keigo Sogabe,Kazunori Hakiai,Akiyoshi Baba,Tanemasa Asano

Jpn. J. Appl. Phys. 45 ( 8A ) 6475 - 6480 2006.04

Fabrication of a Gated Cold Cathode by Using the Inkjet Embedding Method Reviewed

Akiyoshi Baba,Tanemasa Asano

2005 International Microprocesses and Nanotechnology Conference 278 - 279 2005.10

Gate Controlled Electrostatic Droplet Ejection Reviewed

Yuji Ishida,Keigo Sogabe,Kazunori Hakiai,Akiyoshi Baba,Tanemasa Asano

2005 International Microprocesses and Nanotechnology Conference 280 - 281 2005.10

Fabrication of Gated cold cathode Using Standing Thin Film Induced by Ion-Beam Bombardment Reviewed

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

18th International Vacuum Nanoelectronics Conference 38 - 39 2005.07

Fabrication of Gated Carbon Black Field Electron Emitter Using Inkjet Printing Reviewed

Akiyoshi Baba,Yuji Ishida,Kazunori Hakiai,Tanemasa Asano

18th International Vacuum Nanoelectronics Conference 42 - 43 2005.07

Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization Reviewed

Yuji Ishida,Kazunori Hakiai,Akiyoshi Baba,Tanemasa Asano

Jpn. J. Appl. Phys. 44 ( 7B ) 5786 - 5790 2005.04

Fabrication of Micro Field Emitter Tip Using Ion-Beam Irradiation-Induced Self-Standing of Thin Films Reviewed

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

Jpn. J. Appl. Phys 44 ( 7B ) 5744 - 5748 2005.04

Electrostatic Droplet Ejection Using Planar Needle Inkjet Head Reviewed

Kazunori Hakiai,Yuji Ishida,Akiyoshi Baba,Tanemasa Asano

Jpn. J. Appl. Phys. 44 ( 7B ) 5781 - 5785 2005.04

Fabrication of Micro Field Emitter Tip Using Ion-Beam Irradiation-Induced Self-Standing of Thin Film Reviewed

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

2004 International Microprocesses and Nanotechnology Conference 328 - 329 2004.10

Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization Reviewed

Yuji Ishida,Kazunori Hakiai,Kazunari Matsuzaki,Akiyoshi Baba,Tanemasa Asano

2004 International Microprocesses and Nanotechnology Conference 28 - 29 2004.10

Measurement of Electron Energy Distribution Obtained from Wedge Type Silicon Emitter Array Reviewed

Katsuya Higa,Akiyoshi Baba,Tanemasa Asano

2004 International Microprocesses and Nanotechnology Conference 258 - 259 2004.10

Electrostatic Droplet Ejection Using Planar Needle Inkjet Head Reviewed

Kazunori Hakiai,Yuji Ishida,Kazunari Matsuzaki,Akiyoshi Baba,Tanemasa Asano

2004 International Microprocesses and Nanotechnology Conference 30 - 31 2004.10

Reduction of the Gate-Oxide/poly-Si Interface Roughness by Microwave-Plasma Oxidation and Its Impact on TFT Performance Reviewed

Chihiro Shin,Akiyoshi Baba,Tanemasa Asano

2004 Int. Workshops on Active-Matrix Liquid-Crystal Displays 317 - 320 2004.08

Ultra-High Electron Emission Efficiency from Defect Control Polyimide Tunnel Cathode Reviewed

Akiyoshi Baba,Tomoya Yoshida,Tanemasa Asano

17th International Vacuum Nanoelectronics Conference 104 - 105 2004.07

Feasibility of Inkjet Printing for Field Electron Emitter Fabrication Reviewed

Akiyoshi Baba,Yuji Ishida,Tomoya Yoshida,Kazunori Hakiai,Kazunari Matsuzaki,Tanemasa Asano

17th International Vacuum Nanoelectronics Conference 272 - 273 2004.07

Increase in Emission Current after High-Frequency Low-Voltage Pulses Application Observed for Gated Nano-Pillar Cathode Reviewed

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

17th International Vacuum Nanoelectronics Conference 258 - 259 2004.07

Increased Emission Efficiency of Gated Cold Cathode with Carbonic Nano-Pillars Reviewed

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

Jpn. J. Appl. Phys. 43 ( 6B ) 3901 - 3905 2004.04

Field Emission Characteristics of Defect-Controlled Polyimide Tunneling Cathode Reviewed

Akiyoshi Baba,Tomoya Yoshida,Tanemasa Asano

J. Vac. Sci. & Technol. B 22 ( 3 ) 1353 - 1357 2004.04

Field Electron Emission Inkjet-Printed Carbon Black Reviewed

Akiyoshi Baba,Tomoya Yoshida,Kazunari Matsuzaki,Yuji Ishida,Tanemasa Asano

Jpn. J. Appl. Phys. 43 ( 6B ) 3923 - 3927 2004.04

Gated Cold Cathode Array with Carbonic Nano-Pillars Formed by O2 RIE for FED Application Reviewed

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

10th Int. Display Workshops 1231 - 1234 2003.12

Gate Oxide Integrity of Microwave-Plasma-Grown Silicon Oxide Reviewed

Akiyoshi Baba,Chihiro Shin,Tanemasa Asano

10th Int. Display Workshops 439 - 442 2003.12

Planer Electrostatic Inkjet Device with Gate Electrode Reviewed

Kazunari Matsuzaki,Yuji Ishida,Atsunobu Yoshida,Akiyoshi Baba,Tanemasa Asano

2003 International Microprocesses and Nanotechnology Conference 190 - 191 2003.10

Field Electron Emission from Carbon Black Prepared by Inkjet Printing Reviewed

Akiyoshi Baba,Tomoya Yoshida,Kazunari Matsuzaki,Yuji Ishida,Tanemasa Asano

2003 International Microprocesses and Nanotechnology Conference 300 - 301 2003.10

Increased Emission Efficiency of Gated Cold Cathode with Carbonic Nano-Pillars Reviewed

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

2003 International Microprocesses and Nanotechnology Conference 188 - 189 2003.10

Electrostatic Inkjet Head Fabricated by Anodization of Si Reviewed

Yuji Ishida,Kazunari Matsuzaki,Akiyoshi Baba,Tanemasa Asano

2003 International Microprocesses and Nanotechnology Conference 302 - 303 2003.10

Self-Aligned Fabrication of Gated Organic Nano-Pillar Cold Cathode Reviewed

Akiyoshi Baba,Tomoya Yoshida,Tanemasa Asano

16th International Vacuum Microelectronics Conference 17 - 18 2003.07

Field Emission Characteristics of Defect-Controlled Polyimide Tunneling Cathode Reviewed

Akiyoshi Baba,Tomoya Yoshida,Tanemasa Asano

16th International Vacuum Microelectronics Conference 267 - 268 2003.07

Micro Field Emitter with Nano-Pillarets Formed by RIE of Photoresist Reviewed

Akiyoshi Baba,Tomoya Yoshida,Tanemasa Asano

Jpn. J. Appl. Phys 42 ( 6B ) 552 - 556 2003.04

インクジェット法で作製したカーボンブラックからの電界電子放出

馬場昭好,吉田知也,石田雄二,浅野種正

信学技報 Technical Report of IEICE 37 - 42 2003.04

Field Emission from Metal Particles Bound with a Photoresist Reviewed

Akiyoshi Baba,Tanemasa Asano

J. Vac. Sci. & Technol. B 21 ( 1 ) 552 - 556 2003.01

MIM Cold Cathode Using Ion-Beam Irradiated Polyimide as Tunneling Insulator Reviewed

Akiyoshi BABA,Tomoya YOSHIDA,Tanemasa ASANO

9th Int. Display Workshops 1049 - 1052 2002.12

Micro Field Emitter with Nano-Pillarets Formed by RIE of Photoresist Reviewed

Akiyoshi BABA,Tomoya YOSHIDA,Tanemasa ASANO

2002 International Microprocesses and Nanotechnology Conference 332 - 333 2002.11

Field Electron Emission from Gated Organic Emitter Tips Prepared Using Stamping Technique Reviewed

Akiyoshi BABA,Kouichi TSUBAKI,Tanemasa ASANO

15th International Vacuum Microelectronics Conference & 48th International Field Emission Symposium 2002.07

Easy Release of the Mold in an Imprinting Method Using Ion Beam Modification of Photoresist Surface Reviewed

Akiyoshi Baba,Masakazu Iwamoto,Kouichi Tsubaki,Tanemasa Asano

Jpn. J. Appl. Phys. 41 ( 6B ) 4190 - 4193 2002.06

RIEにより作製した有機物針状突起群を電子源とする三極素子の作製

吉田知也,馬場昭好,浅野種正

信学技報 Technical Report of IEICE 23 - 28 2002.04

Easy Removal of Mold for Imprint Lithography by Ion Beam Modification of Photoresist Surface Reviewed

Akiyoshi BABA,Masakazu IWAMOTO,Kouichi TSUBAKI,Tanemasa ASANO

2001 International Microprocesses and Nanotechnology Conference 96 - 97 2001.11

Field Emission from Nano-Protrusion Fabricated Using Nano-Stamp Technique Reviewed

Akiyoshi BABA,Kouichi TSUBAKI,Tanemasa ASANO

2001 International Microprocesses and Nanotechnology Conference 196 - 197 2001.11

Field Emission from Nano-Pillarets Prepared by Reactive Ion Etching of Organic Materials Reviewed

Akiyoshi BABA,Tanemasa ASANO

21st Int. Display Research Conference in conjunction with the 8th Int. Display Workshops 1185 - 1188 2001.10

Field Emission from Metal-Particle Bound with a Photoresist Reviewed

Akiyoshi BABA,Tanemasa ASANO

14th International Vacuum Microelectronics Conference 235 - 236 2001.08

有機材料のスタンプ形成による高密度電子源ティップアレイの作製

椿弘一,馬場昭好,浅野種正

信学技報 Technical Report of IEICE 21 - 26 2001.04

Field Emission from Pd Fine-Particle Film Reviewed

Akiyoshi BABA,Tanemasa ASANO

The Seventh International Display Workshops IDW '00 979 - 982 2000.12

Fabrication of Gated Field Emitter from Wedge Array Prepared by Stamp Technology Reviewed

Akiyoshi BABA,Kouichi TSUBAKI,Masakazu IWAMOTO,Tanemasa ASANO

2000 International Microprocesses and Nanotechnology Conference 128 - 129 2000.07

Imprint Lithography Using Triple-Layer-Resist and its Application to MOSFET Fabrication Reviewed

Hiroyuki NAKAMURA,Akiyoshi BABA,Tanemasa ASANO

2000 International Microprocesses and Nanotechnology Conference 232 - 233 2000.07

Stamp Technology for Fabrication of Field Emitter from Organic Material Reviewed

Akiyoshi Baba,Masafumi Hizukuri,Masakazu Iwamoto,Tanemasa Asano

Journal of Vacuum Science and Technology B 18 ( 2 ) 877 - 879 2000.04

Imprint lithography Using Triple-Layer-Resist and Its Application to Metal-Oxide-Silicon Field-Effect-Transistor Fabrication Reviewed

Hiroyuki Nakamura,Akiyoshi Baba,Tanemasa Asano

Japanese Journal of Applied Physics Part 1 39 ( 12B ) 7080 - 7080 2000.04

絶縁体でバインドされたパラジウム微粒子膜からの電界電子放出

馬場昭好,浅野種正

信学技報 Technical Report of IEICE 25 - 30 2000.04

Fabrication of Field Emitters from Organic Materials Using a Stamp Technology Reviewed

Akiyoshi Baba,Masafumi Hizukuri,Masakazu Iwamoto,Tanemasa Asano

The Sixth International Display Workshops 919 - 922 1999.12

Fabrication of Carbon-Based Field Emitters Using a Stamp Technology Reviewed

Akiyoshi Baba,Masafumi Hizukuri,Masakazu Iwamoto,Tanemasa Asano

1999 International Microprocesses and Nanotechnology Conference 182 - 183 1999.07

Field Emission from an Ion-Beam Modified Polyimide Film Reviewed

Akiyoshi Baba,Katsuya Higa,Tanemasa Asano

Japanese Journal of Applied Physics 38 ( 3A ) L261 - L263 1999.04

Field emission from an ion-beam modified polyimide film Reviewed

Akiyoshi Baba,Katsuya Higa,Tanemasa Asano

Japanese Journal of Applied Physics 38 ( 3A ) L261 - L263 1999.04

Fabrication of Carbon-Based Field Emitters Using stamp Technology Reviewed

Akiyoshi Baba,Masafumi Hizukuri,Masakazu Iwamoto,Tanemasa Asano

Japanese Journal of Applied Physics 38 ( 12B ) 7203 - 7207 1999.04

塗布性有機膜のイオン照射改質による炭素系電子源材料 Reviewed

浅野種正,馬場昭好

ディスプレイアンドイメージング 1 ( 8 ) 61 - 68 1999.04

スタンプ法による有機材料の構造形成と電界放出型微小電子源への応用

馬場昭好,岩本正和,浅野種正

信学技報 Technical Report of IEICE 25 - 30 1999.04

A flexible field emitter made by ion-beam modification of polyimide film: Reviewed

Akiyoshi Baba,Katsuya Higa,Tanemasa Asano

The Fifth International Display Workshops 61 - 64 1998.12

有機物イオン照射改質によるマイクロコールドエミッタ材料の創製

浅野種正,馬場昭好,比嘉勝也

信学技報　Technical Report of IEICE 29 - 36 1998.04

Behavior of Radiation-Induced Defects and Amorphization in Silicon Crystal Reviewed

Nuclear Instrument & Methods in Physics Research B ( 121 ) 299 - 299 1997.04

Deep Level of Iron-Hydrogen Complex in Silicon Reviewed

Taizoh Sadoh,K. Tsukamoto,A. Baba,D. Bai,A. Kenjo,T. Tsurushima

J. Appl. Phys. 82 3828 - 3828 1997.04

Deep States in Silicon on Sapphire by Transient-Current Spectroscopy Reviewed

T. Sadoh,A. Matsushita,Y.-Q. Zhang,D.-J. Bai,A. Baba,A. Kenjo,T. Tsurushima

J. Appl. Phys. 82 5262 - 5262 1997.04

Growth Kinetics of CoSi Formed by Ion Beam Irradiation at Room Temperature Reviewed

Jounal of Applied Physics ( 82 ) 5480 - 5480 1997.04

Simplified Evaluation of Displacement Effect Distribution in Silicon Irradiated with Low-Energy Ions

Dong-Ju Bai,Tomohiro Kawase,Akiyoshi Baba,Atsushi Kenjo,Taizoh Sadoh,Hiroshi Nakashima,Hiroshi Mori,Toshio Tsurushima

Research Reports on Information Science and Electrical Engineering of Kyushu University 2 59 - 59 1997.04

低エネルギーイオン照射によるシリコンの非晶質化

白冬菊,河瀬智宏,馬場昭好,権丈淳,佐道泰造,中島寛,森紘,鶴島稔夫

九州大学大学院システム情報科学研究科報告 2 ( 1 ) 1997.04

イオンビーム照射によるコバルトシリサイド形成機構

馬場昭好,荒牧宏隆,阿部孝幸,松下篤志,佐道泰造,権丈淳,森紘,中島寛,鶴島稔夫

九州大学中央分析センター報告 ( 15 ) 1997.04

Effect of Energy Transport with Recoil Atoms on Deposited Energy Distribution in Silicon Irradiated with Energetic Ions

Dong-Ju Bai,Akiyoshi Baba,Atsushi Kenjo,Taizoh Sadoh,Hiroshi Nakashima,Hiroshi Mori,Toshio Tsurushima

Research Reports on Information Science and Electrical Engineering of Kyushu University 1997.04

Evaluation of Damage Induced by Low-Energy Ion Irradiation in Silicon

Akiyoshi Baba,Taizoh Sadoh,Atsushi Kenjo,Hiroshi Nakashima,Hiroshi Mori,Toshio Tsurushima

Memoirs of the Faculty of Engineering Kyushu University 55 127 - 127 1995.04

Behavior of Defects Induced by Low-Energy Ions in Silicon Films Reviewed

Taizoh Sadoh,Hironori Takeshita,Akiyoshi Baba,Atsushi Kenjo,Hiroshi Nakashima,Toshio Tsurushima

Jpn. J. Appl. Phys. 33 7151 - 7151 1994.04

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Papers - BABA Akiyoshi