Faculty Profiles - BABA Akiyoshi

Papers - BABA Akiyoshi

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Dependence of sensitivity loss on organic film thickness and influence of cantilever warpage in a piezoelectric wideband acoustic sensor coated with an organic film Reviewed

Kuchiji H., Masumoto N., Morishita K., Hasegawa S., Suzuki T., Baba A.

Japanese Journal of Applied Physics 63 ( 3 ) 2024.03

An efficient polishing process for silicon carbide using ion implantation method Reviewed International journal

Takitani S., Baba A., Nishizawa H., Suzuki K.

Japanese Journal of Applied Physics 63 ( 3 ) 2024.03

Design and Simulation of Piezoelectric Wideband Acoustic Sensor Covered with Organic Film Reviewed International journal

Kuchiji Hiroyuki, Masumoto Naoki, Morishita Kota, Hasegawa Shunta, Takaaki Suzuki, Baba Akiyoshi

1st International Conference on Robotics, Engineering, Science, and Technology, RESTCON 2024 59 - 63 2024.02

Piezoelectric MEMS wideband acoustic sensor coated by organic film Reviewed International journal

Kuchiji H., Masumoto N., Baba A.

Japanese Journal of Applied Physics 62 2023.06

Piezoelectric MEMS Wideband Acoustic Sensor Coated by Organic Film Reviewed International journal

Hiroyuki Kuchiji,Naoki Masumoto,Akiyoshi Baba

Digest of 35th International Microprocesses and Nanotechnology Conference (MNC2022) 11P-4-32 2022.11

Absolute longitudinal distance measurement verification of a standard polystyrene nanoparticle near a surface in water by means of multi-wavelength evanescent field Reviewed

Blattler A., Khajornrungruang P., Suzuki K., Baba A., Goto D.

European Society for Precision Engineering and Nanotechnology, Conference Proceedings - 22nd International Conference and Exhibition, EUSPEN 2022 385 - 388 2022.01

Study on Nanoscale Observatory in Polishing Phenomena applying Optical Evanescent Field

Permpatdechakul Thitipat, Khajornrungruang Panart, Suzuki Keisuke, Baba Akiyoshi

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2021A ( 0 ) 102 - 103 2021.09

Language：Japanese Publishing type：Research paper (conference, symposium, etc.)

The nanoscale polishing phenomena between substrate surface, 105 nm-sized SiO2 particles slurry, and polishing pad during CMP process were experimentally observed and evaluated to identify the main factors which effectively polish a 4H-SiC substrate. The nanoscale polishing phenomena were observed in-situ by our developed compact apparatus applied an optical evanescent field. The observation is able to detect the scattering light from either the nano-abrasive particles or the pad asperities when they react to the surface to being polishing. The nanoparticle motion phenomena, which two conditions (i)only nanoparticles (without pad) and (ii)nanoparticles with pad sliding, on 4H-SiC substrate were observed. According to the observed results, the observed scattering light of nanoparticle on 4H-SiC was the ellipse shape compared with the observing on SiO2 substrate. Furthermore, we could observe the particles moved nearer and then adhered on the surface. Less particle’s Brownian motion when the particle moved nearer to the surface. In case of nanoparticle with pad sliding, we could observe only the scattering light of pad sliding because the scattering light intensity of particle is quite lower than pad. Therefore, approached nanoparticle to 4H-SiC surface phenomena might be one possible role to explain higher polishing rate CMP parameter.

DOI： 10.11522/pscjspe.2021a.0_102

CiNii Research

Study on On-Machine Visualization of Surface Processing Phenomena in Nanoscale

Blattler Aran, Khajornrungruang Panart, Suzuki Keisuke, Baba Akiyoshi

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2021A ( 0 ) 588 - 589 2021.09

Language：Japanese Publishing type：Research paper (conference, symposium, etc.)

An abrasive nanoparticle behavior in chemical mechanical polishing (CMP) process is a three-dimensional (3D) motion near a substrate or reference surface. The height position is a longitudinal distance between the reference surface and nanoparticle, which is a challenge for measuring the height position in a wet condition. Our previous report could estimate the relative height of polystyrene 100 nm particles by applying multi-wavelength evanescent fields, but the absolute height was not confirmed yet. Therefore, in this report, we proposed a design concept for absolute height verification by using the developed nano-step height patterns. The nano-step height was approximately less than hundred nanometers from the reference surface. The nano-step height made from an optical resin that has a refractive index close to water to decrease the scattering light during observing nanoparticles in water. Polystyrene 100 nm particles on the nano-step height were used to estimate the absolute height of nanoparticle. The proposed concept could be used to verify the nanoparticle's absolute height in water, which can be applied to clarify the nanoparticle phenomena during the CMP process in the near future.

DOI： 10.11522/pscjspe.2021a.0_588

CiNii Research

The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate Reviewed International journal

Sethavut Duangchan, Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang

4th IEEE Electron Devices Technology and Manufacturing Conference (EDTM2020) 2020.03

SiN used as a stressor in Germanium-On-Insulator substrate Reviewed International journal

Sethavut Duangchan, Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang

2019 International 3D Systems Integration Conference (3DIC) 2019.10

SiN used as a Stressor in Germanium-On-Insulator Substrate Reviewed International journal

Duangchan S., Yamamoto K., Wang D., Nakashima H., Baba A.

IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019 2019.10

Modulation transfer function analysis of silicon X-ray sensor with trench-structured photodiodes Reviewed

Ariyoshi Tetsuya, Iwasa Jumpei, Takane Yuta, Sakamoto Kenji, Baba Akiyoshi, Arima Yutaka

IEICE Electron. Express 15 ( 11 ) 20180177 - 20180177 2018.06

Fabrication of silicon-on-diamond substrate with an ultrathin SiO<inf>2</inf>bonding layer Reviewed

Nagata M., Shirahama R., Duangchan S., Baba A.

Japanese Journal of Applied Physics 57 ( 6 ) 2018.06

Silicon trench photodiodes on a wafer for efficient X-ray-to-current signal conversion using side-X-ray-irradiation mode Reviewed

57 ( 4 ) 2018.04

Fabrication of Silicon on Diamond Structure with an Ultra-Thin SiO2 Bonding Layer by Sputter Etching Method Reviewed

8D-6-1 2017.11

Estimation of the Conversion Properties of Trench-Structured Silicon X-ray Photodiodes by the Side X-ray Irradiation Method Reviewed

Tetsuya Ariyoshi, Yuta Takane, Jumpei Iwasa, Kenji Sakamoto, Akiyoshi Baba, Yutaka Arima

321 - 322 2017.09

X-ray-to-current signal conversion characteristics of trench-structured photodiodes for direct-conversion-type silicon X-ray sensor Reviewed

56 ( 4 ) 2017.04

High-performance vertical Si PiN diode by hole remaining mechanism Reviewed

129 22 - 28 2017.03

Reduced operating temperature of active layer Si covered by nanocrystalline diamond film Reviewed

28 ( 1 ) 617 - 624 2017.01

Sensitivity Properties of a Direct Conversion Silicon X-ray Sensor with Trench-Structured Photodiodes Reviewed

141 - 142 2016.09

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Papers - BABA Akiyoshi