研究者詳細 - 馬場　昭好

論文 - 馬場　昭好

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Dependence of sensitivity loss on organic film thickness and influence of cantilever warpage in a piezoelectric wideband acoustic sensor coated with an organic film 査読有り

Kuchiji H., Masumoto N., Morishita K., Hasegawa S., Suzuki T., Baba A.

Japanese Journal of Applied Physics 63 ( 3 ) 2024年03月

担当区分：責任著者記述言語：英語掲載種別：研究論文（学術雑誌）

A wideband acoustic sensor is reported, comprising a piezoelectric MEMS acoustic transducer with organic film-coated cantilevers. Considering the sensitivity reduction associated with the application of an organic film, it is necessary to optimize the material selection and thickness of the organic film. Therefore, the relationship between the thickness of the polyurethane film and the consequent loss in sensitivity is elucidated. Our findings demonstrate that the polyurethane film thickness should be approximately 0.5 μm (or less) to limit sensitivity loss to 6 dB. Additionally, both simulations and experimental results reveal that the resonant frequency of the system is significantly influenced by the warpage of the cantilever. This study provides essential insights into optimizing the performance of MEMS acoustic transducers with organic film-coated cantilevers.

DOI： 10.35848/1347-4065/ad2918

Kyutacar

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An efficient polishing process for silicon carbide using ion implantation method 査読有り国際誌

Takitani S., Baba A., Nishizawa H., Suzuki K.

Japanese Journal of Applied Physics 63 ( 3 ) 2024年03月

記述言語：英語掲載種別：研究論文（学術雑誌）

We have developed an efficient polishing process for silicon carbide (SiC) using the ion implantation method. An embrittlement layer is generated by an argon ion beam with 50 kV acceleration voltage. Although colloidal silica slurry without oxidant cannot remove the SiC substrate at all, the embrittlement layer is removed by the slurry. The polishing area is defined through patterning with a resin mask during implantation. Such patterning step is expected to compatible with the damascene process on SiC substrates. Raman spectra suggest that the crystal structure of the SiC substrate is not changed after surface polishing because of the E1 and A1 characteristics.

DOI： 10.35848/1347-4065/ad308c

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Design and Simulation of Piezoelectric Wideband Acoustic Sensor Covered with Organic Film 査読有り国際誌

Kuchiji Hiroyuki, Masumoto Naoki, Morishita Kota, Hasegawa Shunta, Takaaki Suzuki, Baba Akiyoshi

1st International Conference on Robotics, Engineering, Science, and Technology, RESTCON 2024 59 - 63 2024年02月

Piezoelectric MEMS wideband acoustic sensor coated by organic film 査読有り国際誌

Kuchiji H., Masumoto N., Baba A.

Japanese Journal of Applied Physics 62 2023年06月

担当区分：責任著者記述言語：英語掲載種別：研究論文（学術雑誌）

In this study, we developed an acoustic sensor with a structure in which a piezoelectric cantilever array is covered with an organic film. For this, we used AlN and polyurethane as the piezoelectric material and organic film, respectively. The results suggested that the sensitivity in the low-frequency region improved, and the resonance frequency increased. We investigated the resonance frequency based on a simulation and verified that it matched the measured value. Further, we created a broadband acoustic sensor by covering the space between the cantilevers with an organic film.

DOI： 10.35848/1347-4065/acbb82

Scopus

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Piezoelectric MEMS Wideband Acoustic Sensor Coated by Organic Film 査読有り国際誌

Hiroyuki Kuchiji,Naoki Masumoto,Akiyoshi Baba

Digest of 35th International Microprocesses and Nanotechnology Conference (MNC2022) 11P-4-32 2022年11月

Absolute longitudinal distance measurement verification of a standard polystyrene nanoparticle near a surface in water by means of multi-wavelength evanescent field 査読有り

Blattler A., Khajornrungruang P., Suzuki K., Baba A., Goto D.

European Society for Precision Engineering and Nanotechnology, Conference Proceedings - 22nd International Conference and Exhibition, EUSPEN 2022 385 - 388 2022年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

In the wet semiconductor process, abrasive nanoparticles are widely used in the chemical mechanical polishing (CMP) process to polish wafer surfaces for high planarization. During polishing, nanoparticles move with a high-speed three-dimensional (3D) position in the solution. In the 3D particles's moving positions, Z is a perpendicular longitudinal distance between the surface to the nanoparticle that plays a significant role in polishing, which could not be measured by general microscopy without longitudinal scanning. To understand nanoparticle phenomena near-surface, we have proposed and developed the apparatus with real-time fastmotion tracking on optical multi-wavelength evanescent fields microscopy to measure the 3D motion of the nanoparticle in water without scanning. In euspen's 2020, we could verify the relative distance ?Z of nanoparticles in water, but the absolute distance Z is unknown yet. In this manuscript, we have therefore developed an invisible nano-step height in water to verify the absolute height Z of an individual nanoparticle. The invisible nano-step height in water is made from an optical resin with a refractive index of 1.35 that is close to a refractive index of water to avoid unnecessary light during experimental verification. The nano-step height was less than 100 nm on a glass surface, fabricated using nanoimprint lithography. Polystyrene f100 nm standard particles in water were used to verify the height Z. The results of height Z of nanoparticles could be measured less than 100 nm with the measurement uncertainty ±10 nm (2s), which is related to the interferometer result of the nano-step height.

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局在光によるナノ研磨現象観測に関する研究

パームパッデーチャークンティティパット, カチョーンルンルアンパナート, 鈴木恵友, 馬場昭好

精密工学会学術講演会講演論文集 ( 公益社団法人精密工学会 ) 2021A ( 0 ) 102 - 103 2021年09月

記述言語：日本語掲載種別：研究論文（研究会，シンポジウム資料等）

The nanoscale polishing phenomena between substrate surface, 105 nm-sized SiO2 particles slurry, and polishing pad during CMP process were experimentally observed and evaluated to identify the main factors which effectively polish a 4H-SiC substrate. The nanoscale polishing phenomena were observed in-situ by our developed compact apparatus applied an optical evanescent field. The observation is able to detect the scattering light from either the nano-abrasive particles or the pad asperities when they react to the surface to being polishing. The nanoparticle motion phenomena, which two conditions (i)only nanoparticles (without pad) and (ii)nanoparticles with pad sliding, on 4H-SiC substrate were observed. According to the observed results, the observed scattering light of nanoparticle on 4H-SiC was the ellipse shape compared with the observing on SiO2 substrate. Furthermore, we could observe the particles moved nearer and then adhered on the surface. Less particle’s Brownian motion when the particle moved nearer to the surface. In case of nanoparticle with pad sliding, we could observe only the scattering light of pad sliding because the scattering light intensity of particle is quite lower than pad. Therefore, approached nanoparticle to 4H-SiC surface phenomena might be one possible role to explain higher polishing rate CMP parameter.

DOI： 10.11522/pscjspe.2021a.0_102

CiNii Research

ナノスケールにおける加工現象可視化に関する研究

ブラットラーアラン, カチョーンルンルアンパナート, 鈴木恵友, 馬場昭好

精密工学会学術講演会講演論文集 ( 公益社団法人精密工学会 ) 2021A ( 0 ) 588 - 589 2021年09月

記述言語：日本語掲載種別：研究論文（研究会，シンポジウム資料等）

An abrasive nanoparticle behavior in chemical mechanical polishing (CMP) process is a three-dimensional (3D) motion near a substrate or reference surface. The height position is a longitudinal distance between the reference surface and nanoparticle, which is a challenge for measuring the height position in a wet condition. Our previous report could estimate the relative height of polystyrene 100 nm particles by applying multi-wavelength evanescent fields, but the absolute height was not confirmed yet. Therefore, in this report, we proposed a design concept for absolute height verification by using the developed nano-step height patterns. The nano-step height was approximately less than hundred nanometers from the reference surface. The nano-step height made from an optical resin that has a refractive index close to water to decrease the scattering light during observing nanoparticles in water. Polystyrene 100 nm particles on the nano-step height were used to estimate the absolute height of nanoparticle. The proposed concept could be used to verify the nanoparticle's absolute height in water, which can be applied to clarify the nanoparticle phenomena during the CMP process in the near future.

DOI： 10.11522/pscjspe.2021a.0_588

CiNii Research

The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate 査読有り国際誌

Sethavut Duangchan, Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang

4th IEEE Electron Devices Technology and Manufacturing Conference (EDTM2020) 2020年03月

SiN used as a stressor in Germanium-On-Insulator substrate 査読有り国際誌

Sethavut Duangchan, Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang

2019 International 3D Systems Integration Conference (3DIC) 2019年10月

SiN used as a Stressor in Germanium-On-Insulator Substrate 査読有り国際誌

Duangchan S., Yamamoto K., Wang D., Nakashima H., Baba A.

IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019 2019年10月

担当区分：責任著者記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

This research aims to show the advantage of using silicon nitride as a stressor in a strained germanium-on-insulator substrate (strained Ge). A Si substrate is patterned on the surface before bonding for controlling the shape and the position of strained Ge. The SiN film is deposited on Ge substrate by PE-CVD with 150 nm thick approximately. Two substrates are bonded together by surface-Activation bonding with 200°C post-Anneal. It was found that the tensile strain of 1.16% for the flat part and 2.03% for the bucking part, which is higher than other reported GOI using SiO2 layer.

DOI： 10.1109/3DIC48104.2019.9058896

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Modulation transfer function analysis of silicon X-ray sensor with trench-structured photodiodes 査読有り

Ariyoshi Tetsuya, Iwasa Jumpei, Takane Yuta, Sakamoto Kenji, Baba Akiyoshi, Arima Yutaka

IEICE Electron. Express 15 ( 11 ) 20180177 - 20180177 2018年06月

記述言語：英語掲載種別：研究論文（学術雑誌）

A silicon X-ray sensor with trench-structured photodiodes was studied and the influence of Compton scattering was estimated. By irradiating the target pixel with X-rays and measuring the signal from adjacent pixels, X-ray scattering and pixel blur of the proposed sensor was determined. An X-ray sensor with a length of 22.6 mm was designed and fabricated, and its modulation transfer function (MTF) was obtained. A sensor structure to improve the MTF level to that of CdTe was proposed.

DOI： 10.1587/elex.15.20180177

CiNii Article

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Fabrication of silicon-on-diamond substrate with an ultrathin SiO<inf>2</inf>bonding layer 査読有り

Nagata M., Shirahama R., Duangchan S., Baba A.

Japanese Journal of Applied Physics 57 ( 6 ) 2018年06月

担当区分：責任著者記述言語：英語掲載種別：研究論文（学術雑誌）

© 2018 The Japan Society of Applied Physics. We proposed and demonstrated a sputter etching method to prepare both a flat surface (root-mean-square surface roughness of approximately 0.2-0.3 nm) and an ultrathin SiO2bonding layer at an accuracy of approximately 5 nm in thickness to fabricate a silicon-on-diamond substrate (SOD). We also investigated a plasma activation method on a SiO2surface using various gases. We found that O2plasma activation is more suitable for the bonding between SiO2and Si than N2or Ar plasma activation. We speculate that the concentration of hydroxyl groups on the SiO2surface was increased by O2plasma activation. We fabricated the SOD substrate with an ultrathin (15nm in thickness) SiO2bonding layer using the sputter etching and O2 plasma activation methods.

DOI： 10.7567/JJAP.57.06HJ08

Scopus

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Silicon trench photodiodes on a wafer for efficient X-ray-to-current signal conversion using side-X-ray-irradiation mode 査読有り

Ariyoshi T., Takane Y., Iwasa J., Sakamoto K., Baba A., Arima Y.

Japanese Journal of Applied Physics 57 ( 4 ) 2018年04月

記述言語：英語掲載種別：研究論文（学術雑誌）

© 2018 The Japan Society of Applied Physics. In this paper, we report a direct-conversion-type X-ray sensor composed of trench-structured silicon photodiodes, which achieves a high X-ray-to-current conversion efficiency under side X-ray irradiation. The silicon X-ray sensor with a length of 22.6mm and a trench depth of 300 μm was fabricated using a single-poly single-metal 0.35μm process. X-rays with a tube voltage of 80kV were irradiated along the trench photodiode from the side of the test chip. The theoretical limit of X-ray-to-current conversion efficiency of 83.8% was achieved at a low reverse bias voltage of 25 V. The X-ray-to-electrical signal conversion efficiency of conventional indirect-conversion-type X-ray sensors is about 10%. Therefore, the developed sensor has a conversion efficiency that is about eight times higher than that of conventional sensors. It is expected that the developed X-ray sensor will be able to markedly lower the radiation dose required for X-ray diagnoses.

DOI： 10.7567/JJAP.57.04FH04

Scopus

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Fabrication of Silicon on Diamond Structure with an Ultra-Thin SiO2 Bonding Layer by Sputter Etching Method 査読有り

Masahiro Nagata, Ryouya Shirahama, Sethavut Duangchan, Akiyoshi Baba

Digest of 30th International Microprocesses and Nanotechnology Conference (MNC2017) 8D-6-1 2017年11月

Estimation of the Conversion Properties of Trench-Structured Silicon X-ray Photodiodes by the Side X-ray Irradiation Method 査読有り

Tetsuya Ariyoshi, Yuta Takane, Jumpei Iwasa, Kenji Sakamoto, Akiyoshi Baba, Yutaka Arima

Abstracts of the 2016 International Conference on Solid State Devices and Materials 321 - 322 2017年09月

X-ray-to-current signal conversion characteristics of trench-structured photodiodes for direct-conversion-type silicon X-ray sensor 査読有り

Ariyoshi T., Funaki S., Sakamoto K., Baba A., Arima Y.

Japanese Journal of Applied Physics 56 ( 4 ) 2017年04月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

© 2017 The Japan Society of Applied Physics.To reduce the radiation dose required in medical X-ray diagnoses, we propose a high-sensitivity direct-conversion-type silicon X-ray sensor that uses trench-structured photodiodes. This sensor is advantageous in terms of its long device lifetime, noise immunity, and low power consumption because of its low bias voltage. With this sensor, it is possible to detect X-rays with almost 100% efficiency; sensitivity can therefore be improved by approximately 10 times when compared with conventional indirect-conversion-type sensors. In this study, a test chip was fabricated using a single-poly single-metal 0.35μm process. The formed trench photodiodes for the X-ray sensor were approximately 170 and 300μm deep. At a bias voltage of 25V, the absorbed X-ray-to-current signal conversion efficiencies were 89.3% (theoretical limit; 96.7%) at a trench depth of 170μm and 91.1% (theoretical limit; 94.3%) at a trench depth of 300 μm.

DOI： 10.7567/JJAP.56.04CH06

Scopus

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High-performance vertical Si PiN diode by hole remaining mechanism 査読有り

Tsukuda M., Tsukuda M., Baba A., Shiba Y., Omura I.

Solid-State Electronics 129 22 - 28 2017年03月

記述言語：英語掲載種別：研究論文（学術雑誌）

© 2016 Elsevier LtdA novel diode with a unique trench shape is predicted by TCAD simulation to have high performance. The novel 600 V vertical PiN diode with hole pockets by the Bosch deep trench process shows a better trade-off curve between reverse recovery loss and forward voltage. The reverse recovery loss is reduced by half. In addition, the active chip size of the novel diode is reduced to two-thirds that of the conventional PiN diode in the same forward voltage. Thanks to the hole pockets with an electric field in the diagonal direction, the remaining hole suppresses the surge voltage with noise for high performance. In this paper, we specially focus on the analysis of phenomenon and the noise suppression mechanism during reverse recovery. The novel diode structure is a strong candidate when developing the fabrication process after silicon trench etching is established.

DOI： 10.1016/j.sse.2016.12.006

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Reduced operating temperature of active layer Si covered by nanocrystalline diamond film 査読有り

Duangchan S., Koishikawa Y., Shirahama R., Oishi K., Baba A., Matsumoto S., Hasegawa M.

Journal of Materials Science: Materials in Electronics 28 ( 1 ) 617 - 624 2017年01月

記述言語：英語掲載種別：研究論文（学術雑誌）

© 2016, Springer Science+Business Media New York.This paper reports the heat dissipation ability of nanocrystalline diamond (NCD) film used as an insulator in interconnection layers. The thermal resistance is used as an evidence for evaluating particular ability. There are two points to measure, that is to say, the temperature in the active Si region and that of the nearest point at the top of the insulating film. We used a thin film Si resistor covered with NCD or silicon dioxide (SiO2) on a silicon on insulator substrate. The NCD film was deposited by microwave-plasma chemical vapor deposition at 400 °C, while the SiO2 film was deposited by plasma-enhanced chemical vapor deposition at 350 °C. The thickness of the NCD film was 600 nm, while that of the SiO2 film was 300 and 500 nm. The aluminium (Al) was deposited by sputtering and patterned on the top of the insulating-film. Heat was applied to the resistor by directly applying electricity to the resistor. The temperature of the Si resistor and Al was determined from the resistance change. It was found that the thermal resistance of NCD film was approximately 14 % less than that of SiO2 film, leading to the reduction of the thin-film Si temperature by 20 °C, even though it was thicker than 100 nm.

DOI： 10.1007/s10854-016-5566-2

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Sensitivity Properties of a Direct Conversion Silicon X-ray Sensor with Trench-Structured Photodiodes 査読有り

Tetsuya Ariyoshi, Shota Funaki, Kenji Sakamoto, Akiyoshi Baba, Yutaka Arima

Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials 141 - 142 2016年09月

Novel 600 v low reverse recovery loss vertical PiN diode with hole pockets by Bosch deep trench 査読有り

Tsukuda M., Baba A., Shiba Y., Omura I.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 2016-July 295 - 298 2016年07月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

© 2016 IEEE.The performance of a novel diode with characteristic trench shape is predicted by TCAD simulation. A novel 600 V vertical PiN diode with hole pockets by the Bosch deep trench process is proposed for a better trade-off curve between reverse recovery loss and forward voltage. The reverse recovery loss is reduced to a half. In addition, the active chip size of the novel diode is reduced to two-thirds that of the conventional PiN diode in the same forward voltage. The novel diode structure is a strong candidate when the simple fabrication process under development is established.

DOI： 10.1109/ISPSD.2016.7520836

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The Influence of Plasma Conditions on Surface-Activation that Affect the Bonded Area 査読有り

Sethavut Duangchan, Ryouya Shirahama, Tomoki Murayama, Souchi Hamada, Akiyoshi Baba

Asia-Pacific Conference of Transducers and Micro-Nano Technology 2016 283 - 284 2016年06月

Novel 600 V Low Reverse Recovery Loss Vertical PiN Diode with Hole Pockets by Bosch Deep Trench 査読有り

Masanori Tsukuda, Akiyoshi Baba, Yuji Shiba, Ichiro Omura

Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 295 - 298 2016年06月

The heat performance study of nanocrystal diamond film used in a thin film device 査読有り

Sethavut Duangchan,Yusuke Koishikawa,Ryouya Shirahama,Koichiro Oishi,Akiyoshi Baba,Satoshi Matsumoto,Masataka Hasegawa

International Conference on Solid State Devices and Materials (SSDM2015) 2015年09月

Design of a MEMS device for scanning profile measurement with three cantilever displacement sensors 査読有り

Hiroki Shimizu, Takahiro Akiyoshi, Shinya Yanagihara, Yuuma Tamaru, Akiyoshi Baba

Proceedings of 12th International Symposium on Measurement Technology and Intelligent Instruments 2015年09月

Influential factors in low-temperature direct bonding of silicon dioxide 査読有り

Ryouya Shirahama,Sethavut Duangchan,Yusuke Koishikawa,Akiyoshi Baba

IEEE International 3D System Integration Conference (3DIC 2015) 2015年08月

The silicon on diamond structure by low-temperature bonding technique 査読有り

Sethavut Duangchan,Yusuke Uchikawa,Yusuke Koishikawa,Baba Akiyoshi,Kentaro Nakagawa,Satoshi Matsumoto,Masataka Hasegawa,Shinichi Nishizawa

The 65th Electronic Components and Technology Conference (ECTC 2015) 2015年05月

Finite element analysis using a hierarchal decomposition for the interaction of structure, fluid and electrostatic field in mems 査読有り

Ishihara D., Horie T., Niho T., Baba A.

COUPLED PROBLEMS 2015 - Proceedings of the 6th International Conference on Coupled Problems in Science and Engineering 1023 - 1028 2015年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

In this study, a hierarchal decomposition for the interaction of the structure, fluid and electrostatic field or the structure-fluid-electrostatic interaction, which is one of typical phenomena in micro-electro-mechanical system (MEMS), is proposed in order to solve it efficiently. The proposed decomposition partitions the structure-fluid-electrostatic interaction into the fluid-structure interaction (FSI) and the electrostatic field, and, moreover, splits the FSI into the velocity and fluid pressure fields. In this way, the whole interaction system is decomposed into the three fields in a hierarchal way. The proposed decomposition is implemented using a finite element method and is applied to a micro cantilever beam actuated by the electrostatic force in air. It follows from the comparison among the results for the structure-fluid-electrostatic interaction, the FSI and the experiment that the proposed method taking into account the full-interaction can predict the vibration characteristic of the MEMS accurately.

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Hierarchal decomposition for the structure-fluid-electrostatic interaction in a microelectromechanical system 査読有り

Ishihara D., Horie T., Niho T., Baba A.

CMES - Computer Modeling in Engineering and Sciences 108 ( 6 ) 429 - 452 2015年01月

記述言語：英語掲載種別：研究論文（学術雑誌）

Copyright © 2015 Tech Science Press.In this study, a hierarchal decomposition is proposed to solve the structure- fluid-electrostatic interaction in a microelectromechanical system (MEMS). In the proposed decomposition, the structure-fluid-electrostatic interaction is partitioned into the structure-fluid interaction and the electrostatic field using the iteratively staggered method, and the structure-fluid interaction is split into the structurefluid velocity field and the fluid pressure field using the projection method. The proposed decomposition is applied to a micro cantilever beam actuated by the electrostatic force in air. It follows from the comparisons among the numerical and experimental results that the proposed method can predict the MEMS vibration characteristics accurately.

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The effect of surface roughness in SiO2/SiO2 low-temperature bonding 査読有り

Sethavut Duangchan, Shota Osaki, Yusuke Uchikawa, Shuhei Kawai, Yusuke Koishikawa, Akiyoshi Baba

The 2nd Universiti Putra Malaysia - Kyushu Institute of Tecnology International Symposium on Applied Engineering and Sciences (SAES 2014) B-1-3 2014年12月

MEMS 構造要素における構造‐流体‐静電界連成の階層的分解による有限要素解析査読有り

石原大輔, 堀江知義, 二保知也, 馬場昭好

日本機械学会論文集（A編） 79 ( 804 ) 1291 - 1302 2013年08月

Side-Illuminated Color photo Sensor 査読有り

Tetsuya Ariyoshi, Akiyoshi Baba, Yutaka

Japanese Journal of Applied Phyasics ( 52 ) 04CE10 2013年03月

2513 MEMS構造要素における構造 : 流体-静電界連成現象の有限要素解析

宿輪雄介, 石原大輔, 堀江知義, 二保知也, 馬場昭好

計算力学講演会講演論文集 ( 一般社団法人日本機械学会 ) 2013 ( 0 ) _2513 - 1_-_2513-2_ 2013年01月

High Efficiency Near-Infrared Detection using Deep-Trench Photo-Diode 招待有り査読有り

Tetsuya Matsuda, Akiyoshi Baba

25th International Microprocesses and Nanotechnology Conference 1-p-7-101 2012年10月

Fabrication of a polylactide micro-needle array using transfer mold technique for transdermal drug delivery 招待有り査読有り

Akiyoshi Baba

25th International Microprocesses and Nanotechnology Conference 1-P-7-94 2012年10月

Side-Illuminated Color photo Sensor 査読有り

Tetsuya Ariyoshi, Akiyoshi Baba, Yutaka Arima

International Conference on Solid State Devices and Materials 144 - 145 2012年09月

Finite element analysis for interaction problems of structure, fluid and electrostatic field in micro cantilever beams 招待有り査読有り

Daisuke Ishihara, Tomoyoshi Horie, Tomoya Niho, Akiyoshi Baba

Proceedings of KSME-JSME Joint Symposium on Computational Mechanics & CAE 2012 255 - 260 2012年09月

Improved Near-Infrared Sensitivity with a Side-Illuminated Photosensor 査読有り

Tetsuya Ariyoshi, Noriyuki Uryu, Akiyoshi Baba and Yutaka Arima

Jpnese Journal of Applied Physics 51 02BE01 2012年02月

Fabrication of pn junction at the wall of deep trench for near-infrared sensor 査読有り

Akiyoshi Baba, Noriyuki Uryu, Senichi Sumi

24th International Microprocesses and Nanotechnology Conference 2011年10月

Improved Near-Infrared Sensitivity for a Side-Illuminated Photo Sensor 査読有り

Tetsuya Ariyoshi, Noriyuki Uryu, Akiyoshi Baba, Yutaka Arima

2011 Int'l Conference on Solid State Devices and Materials 1031 - 1032 2011年09月

Development of Orderly Micro Asperity on Polishing Pad Surface for Chemical Mechanical Polishing (CMP) Process using Anisotropic Etching 査読有り

Khajornrungruang P., Kimura K., Baba A., Yasuda K.,Tanaka A.

Proceedings of GCMM2010 2010年06月

Development of Periodically Arrayed Micro Pyramid Asperity on Polishing Pad Surface for CMP Process Using Lithography 査読有り

Keiichi Kimura, Akiyoshi Baba, Naoaki Takahashi, Yuichi Hashiyama, Keisuke Yasuda

3rd International Conference of Asian Society for Precision Engineering and Nanotechnology 2009年11月

Fabrication of microneedle array for transdermal drug delivery 査読有り

Yuu Shigetome, Yu Taniguchi, Takahiro Ito, Akiyoshi Baba, Tomohiro Hikima, Kakuji Tojo

3rd International Conference of Asian Society for Precision Engineering and Nanotechnology 2009年11月

Simple fabrication of gated field electron emitter using vertical thin film induced by ion beam irradiation 査読有り

T. Yoshida,M. Nagao,A. Baba,T. Asano,S. Kanemaru

J. Vac. Sci. Technol. B 27 ( 2 ) 729 - 734 2009年02月

Improved near-infrared sensitivity of a back-side illuminated image sensor with a metal reflector 査読有り

Tetsuya Ariyoshi,Shozo Morita,Akiyoshi Baba,Yutaka Arima

IEICE Electron. Express 6 ( 6 ) 341 - 346 2009年02月

Simple fabrication of gated field electron emitter using vertical thin film induced by ion beam irradiation 査読有り

T. Yoshida,M. Nagao,A. Baba,T. Asano,S. Kanemaru

21th International Vacuum Nanoelectronics Conference 32 - 33 2008年07月

Fabrication of Vertical Thin Film FEA Using Ion-Induced Bending Technique 査読有り

Tomoya Yoshida,Chiaki Yasumuro,Masayoshi Nagao,Seigo Kanemaru,Akiyoshi Baba,and Tanemasa Asano

Proceedings of The 14th International Display Workshops 3 2209 - 2212 2007年12月

Statistical Investigation on the Design of Field Emitter Array 査読有り

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

19th International Vacuum Nanoelectronics Conference & 50th International Field Emission Symposium 43 - 44 2006年07月

Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment 査読有り

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

J. Vac. Sci. Technol. B 24 ( 2 ) 932 - 935 2006年04月

Fabrication of a Gated Cold Cathode by Using the Inkjet Embedding method 査読有り

Akiyoshi Baba,Tanemasa Asano

Jpn. J. Appl. Phys 45 ( 6B ) 5631 - 5636 2006年04月

Properties of Ink-Droplet Formation in Double-Gate Electrospray 査読有り

Yuji Ishida,Keigo Sogabe,Kazunori Hakiai,Akiyoshi Baba,Tanemasa Asano

Jpn. J. Appl. Phys. 45 ( 8A ) 6475 - 6480 2006年04月

Fabrication of a Gated Cold Cathode by Using the Inkjet Embedding Method 査読有り

Akiyoshi Baba,Tanemasa Asano

2005 International Microprocesses and Nanotechnology Conference 278 - 279 2005年10月

Gate Controlled Electrostatic Droplet Ejection 査読有り

Yuji Ishida,Keigo Sogabe,Kazunori Hakiai,Akiyoshi Baba,Tanemasa Asano

2005 International Microprocesses and Nanotechnology Conference 280 - 281 2005年10月

Fabrication of Gated cold cathode Using Standing Thin Film Induced by Ion-Beam Bombardment 査読有り

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

18th International Vacuum Nanoelectronics Conference 38 - 39 2005年07月

Fabrication of Gated Carbon Black Field Electron Emitter Using Inkjet Printing 査読有り

Akiyoshi Baba,Yuji Ishida,Kazunori Hakiai,Tanemasa Asano

18th International Vacuum Nanoelectronics Conference 42 - 43 2005年07月

Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization 査読有り

Yuji Ishida,Kazunori Hakiai,Akiyoshi Baba,Tanemasa Asano

Jpn. J. Appl. Phys. 44 ( 7B ) 5786 - 5790 2005年04月

Fabrication of Micro Field Emitter Tip Using Ion-Beam Irradiation-Induced Self-Standing of Thin Films 査読有り

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

Jpn. J. Appl. Phys 44 ( 7B ) 5744 - 5748 2005年04月

Electrostatic Droplet Ejection Using Planar Needle Inkjet Head 査読有り

Kazunori Hakiai,Yuji Ishida,Akiyoshi Baba,Tanemasa Asano

Jpn. J. Appl. Phys. 44 ( 7B ) 5781 - 5785 2005年04月

Fabrication of Micro Field Emitter Tip Using Ion-Beam Irradiation-Induced Self-Standing of Thin Film 査読有り

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

2004 International Microprocesses and Nanotechnology Conference 328 - 329 2004年10月

Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization 査読有り

Yuji Ishida,Kazunori Hakiai,Kazunari Matsuzaki,Akiyoshi Baba,Tanemasa Asano

2004 International Microprocesses and Nanotechnology Conference 28 - 29 2004年10月

Measurement of Electron Energy Distribution Obtained from Wedge Type Silicon Emitter Array 査読有り

Katsuya Higa,Akiyoshi Baba,Tanemasa Asano

2004 International Microprocesses and Nanotechnology Conference 258 - 259 2004年10月

Electrostatic Droplet Ejection Using Planar Needle Inkjet Head 査読有り

Kazunori Hakiai,Yuji Ishida,Kazunari Matsuzaki,Akiyoshi Baba,Tanemasa Asano

2004 International Microprocesses and Nanotechnology Conference 30 - 31 2004年10月

Reduction of the Gate-Oxide/poly-Si Interface Roughness by Microwave-Plasma Oxidation and Its Impact on TFT Performance 査読有り

Chihiro Shin,Akiyoshi Baba,Tanemasa Asano

2004 Int. Workshops on Active-Matrix Liquid-Crystal Displays 317 - 320 2004年08月

Ultra-High Electron Emission Efficiency from Defect Control Polyimide Tunnel Cathode 査読有り

Akiyoshi Baba,Tomoya Yoshida,Tanemasa Asano

17th International Vacuum Nanoelectronics Conference 104 - 105 2004年07月

Feasibility of Inkjet Printing for Field Electron Emitter Fabrication 査読有り

Akiyoshi Baba,Yuji Ishida,Tomoya Yoshida,Kazunori Hakiai,Kazunari Matsuzaki,Tanemasa Asano

17th International Vacuum Nanoelectronics Conference 272 - 273 2004年07月

Increase in Emission Current after High-Frequency Low-Voltage Pulses Application Observed for Gated Nano-Pillar Cathode 査読有り

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

17th International Vacuum Nanoelectronics Conference 258 - 259 2004年07月

Increased Emission Efficiency of Gated Cold Cathode with Carbonic Nano-Pillars 査読有り

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

Jpn. J. Appl. Phys. 43 ( 6B ) 3901 - 3905 2004年04月

Field Emission Characteristics of Defect-Controlled Polyimide Tunneling Cathode 査読有り

Akiyoshi Baba,Tomoya Yoshida,Tanemasa Asano

J. Vac. Sci. & Technol. B 22 ( 3 ) 1353 - 1357 2004年04月

Field Electron Emission Inkjet-Printed Carbon Black 査読有り

Akiyoshi Baba,Tomoya Yoshida,Kazunari Matsuzaki,Yuji Ishida,Tanemasa Asano

Jpn. J. Appl. Phys. 43 ( 6B ) 3923 - 3927 2004年04月

Gated Cold Cathode Array with Carbonic Nano-Pillars Formed by O2 RIE for FED Application 査読有り

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

10th Int. Display Workshops 1231 - 1234 2003年12月

Gate Oxide Integrity of Microwave-Plasma-Grown Silicon Oxide 査読有り

Akiyoshi Baba,Chihiro Shin,Tanemasa Asano

10th Int. Display Workshops 439 - 442 2003年12月

Planer Electrostatic Inkjet Device with Gate Electrode 査読有り

Kazunari Matsuzaki,Yuji Ishida,Atsunobu Yoshida,Akiyoshi Baba,Tanemasa Asano

2003 International Microprocesses and Nanotechnology Conference 190 - 191 2003年10月

Field Electron Emission from Carbon Black Prepared by Inkjet Printing 査読有り

Akiyoshi Baba,Tomoya Yoshida,Kazunari Matsuzaki,Yuji Ishida,Tanemasa Asano

2003 International Microprocesses and Nanotechnology Conference 300 - 301 2003年10月

Increased Emission Efficiency of Gated Cold Cathode with Carbonic Nano-Pillars 査読有り

Tomoya Yoshida,Akiyoshi Baba,Tanemasa Asano

2003 International Microprocesses and Nanotechnology Conference 188 - 189 2003年10月

Electrostatic Inkjet Head Fabricated by Anodization of Si 査読有り

Yuji Ishida,Kazunari Matsuzaki,Akiyoshi Baba,Tanemasa Asano

2003 International Microprocesses and Nanotechnology Conference 302 - 303 2003年10月

Self-Aligned Fabrication of Gated Organic Nano-Pillar Cold Cathode 査読有り

Akiyoshi Baba,Tomoya Yoshida,Tanemasa Asano

16th International Vacuum Microelectronics Conference 17 - 18 2003年07月

Field Emission Characteristics of Defect-Controlled Polyimide Tunneling Cathode 査読有り

Akiyoshi Baba,Tomoya Yoshida,Tanemasa Asano

16th International Vacuum Microelectronics Conference 267 - 268 2003年07月

Micro Field Emitter with Nano-Pillarets Formed by RIE of Photoresist 査読有り

Akiyoshi Baba,Tomoya Yoshida,Tanemasa Asano

Jpn. J. Appl. Phys 42 ( 6B ) 552 - 556 2003年04月

インクジェット法で作製したカーボンブラックからの電界電子放出

馬場昭好,吉田知也,石田雄二,浅野種正

信学技報 Technical Report of IEICE 37 - 42 2003年04月

Field Emission from Metal Particles Bound with a Photoresist 査読有り

Akiyoshi Baba,Tanemasa Asano

J. Vac. Sci. & Technol. B 21 ( 1 ) 552 - 556 2003年01月

MIM Cold Cathode Using Ion-Beam Irradiated Polyimide as Tunneling Insulator 査読有り

Akiyoshi BABA,Tomoya YOSHIDA,Tanemasa ASANO

9th Int. Display Workshops 1049 - 1052 2002年12月

Micro Field Emitter with Nano-Pillarets Formed by RIE of Photoresist 査読有り

Akiyoshi BABA,Tomoya YOSHIDA,Tanemasa ASANO

2002 International Microprocesses and Nanotechnology Conference 332 - 333 2002年11月

Field Electron Emission from Gated Organic Emitter Tips Prepared Using Stamping Technique 査読有り

Akiyoshi BABA,Kouichi TSUBAKI,Tanemasa ASANO

15th International Vacuum Microelectronics Conference & 48th International Field Emission Symposium 2002年07月

Easy Release of the Mold in an Imprinting Method Using Ion Beam Modification of Photoresist Surface 査読有り

Akiyoshi Baba,Masakazu Iwamoto,Kouichi Tsubaki,Tanemasa Asano

Jpn. J. Appl. Phys. 41 ( 6B ) 4190 - 4193 2002年06月

RIEにより作製した有機物針状突起群を電子源とする三極素子の作製

吉田知也,馬場昭好,浅野種正

信学技報 Technical Report of IEICE 23 - 28 2002年04月

Easy Removal of Mold for Imprint Lithography by Ion Beam Modification of Photoresist Surface 査読有り

Akiyoshi BABA,Masakazu IWAMOTO,Kouichi TSUBAKI,Tanemasa ASANO

2001 International Microprocesses and Nanotechnology Conference 96 - 97 2001年11月

Field Emission from Nano-Protrusion Fabricated Using Nano-Stamp Technique 査読有り

Akiyoshi BABA,Kouichi TSUBAKI,Tanemasa ASANO

2001 International Microprocesses and Nanotechnology Conference 196 - 197 2001年11月

Field Emission from Nano-Pillarets Prepared by Reactive Ion Etching of Organic Materials 査読有り

Akiyoshi BABA,Tanemasa ASANO

21st Int. Display Research Conference in conjunction with the 8th Int. Display Workshops 1185 - 1188 2001年10月

Field Emission from Metal-Particle Bound with a Photoresist 査読有り

Akiyoshi BABA,Tanemasa ASANO

14th International Vacuum Microelectronics Conference 235 - 236 2001年08月

有機材料のスタンプ形成による高密度電子源ティップアレイの作製

椿弘一,馬場昭好,浅野種正

信学技報 Technical Report of IEICE 21 - 26 2001年04月

Field Emission from Pd Fine-Particle Film 査読有り

Akiyoshi BABA,Tanemasa ASANO

The Seventh International Display Workshops IDW '00 979 - 982 2000年12月

Fabrication of Gated Field Emitter from Wedge Array Prepared by Stamp Technology 査読有り

Akiyoshi BABA,Kouichi TSUBAKI,Masakazu IWAMOTO,Tanemasa ASANO

2000 International Microprocesses and Nanotechnology Conference 128 - 129 2000年07月

Imprint Lithography Using Triple-Layer-Resist and its Application to MOSFET Fabrication 査読有り

Hiroyuki NAKAMURA,Akiyoshi BABA,Tanemasa ASANO

2000 International Microprocesses and Nanotechnology Conference 232 - 233 2000年07月

Stamp Technology for Fabrication of Field Emitter from Organic Material 査読有り

Akiyoshi Baba,Masafumi Hizukuri,Masakazu Iwamoto,Tanemasa Asano

Journal of Vacuum Science and Technology B 18 ( 2 ) 877 - 879 2000年04月

Imprint lithography Using Triple-Layer-Resist and Its Application to Metal-Oxide-Silicon Field-Effect-Transistor Fabrication 査読有り

Hiroyuki Nakamura,Akiyoshi Baba,Tanemasa Asano

Japanese Journal of Applied Physics Part 1 39 ( 12B ) 7080 - 7080 2000年04月

絶縁体でバインドされたパラジウム微粒子膜からの電界電子放出

馬場昭好,浅野種正

信学技報 Technical Report of IEICE 25 - 30 2000年04月

Fabrication of Field Emitters from Organic Materials Using a Stamp Technology 査読有り

Akiyoshi Baba,Masafumi Hizukuri,Masakazu Iwamoto,Tanemasa Asano

The Sixth International Display Workshops 919 - 922 1999年12月

Fabrication of Carbon-Based Field Emitters Using a Stamp Technology 査読有り

Akiyoshi Baba,Masafumi Hizukuri,Masakazu Iwamoto,Tanemasa Asano

1999 International Microprocesses and Nanotechnology Conference 182 - 183 1999年07月

Field Emission from an Ion-Beam Modified Polyimide Film 査読有り

Akiyoshi Baba,Katsuya Higa,Tanemasa Asano

Japanese Journal of Applied Physics 38 ( 3A ) L261 - L263 1999年04月

Field emission from an ion-beam modified polyimide film 査読有り

Akiyoshi Baba,Katsuya Higa,Tanemasa Asano

Japanese Journal of Applied Physics 38 ( 3A ) L261 - L263 1999年04月

Fabrication of Carbon-Based Field Emitters Using stamp Technology 査読有り

Akiyoshi Baba,Masafumi Hizukuri,Masakazu Iwamoto,Tanemasa Asano

Japanese Journal of Applied Physics 38 ( 12B ) 7203 - 7207 1999年04月

塗布性有機膜のイオン照射改質による炭素系電子源材料査読有り

浅野種正,馬場昭好

ディスプレイアンドイメージング 1 ( 8 ) 61 - 68 1999年04月

スタンプ法による有機材料の構造形成と電界放出型微小電子源への応用

馬場昭好,岩本正和,浅野種正

信学技報 Technical Report of IEICE 25 - 30 1999年04月

A flexible field emitter made by ion-beam modification of polyimide film: 査読有り

Akiyoshi Baba,Katsuya Higa,Tanemasa Asano

The Fifth International Display Workshops 61 - 64 1998年12月

有機物イオン照射改質によるマイクロコールドエミッタ材料の創製

浅野種正,馬場昭好,比嘉勝也

信学技報　Technical Report of IEICE 29 - 36 1998年04月

Behavior of Radiation-Induced Defects and Amorphization in Silicon Crystal 査読有り

馬場　昭好

Nuclear Instrument & Methods in Physics Research B ( 121 ) 299 - 299 1997年04月

Deep Level of Iron-Hydrogen Complex in Silicon 査読有り

Taizoh Sadoh,K. Tsukamoto,A. Baba,D. Bai,A. Kenjo,T. Tsurushima

J. Appl. Phys. 82 3828 - 3828 1997年04月

Deep States in Silicon on Sapphire by Transient-Current Spectroscopy 査読有り

T. Sadoh,A. Matsushita,Y.-Q. Zhang,D.-J. Bai,A. Baba,A. Kenjo,T. Tsurushima

J. Appl. Phys. 82 5262 - 5262 1997年04月

Growth Kinetics of CoSi Formed by Ion Beam Irradiation at Room Temperature 査読有り

馬場　昭好

Jounal of Applied Physics ( 82 ) 5480 - 5480 1997年04月

Simplified Evaluation of Displacement Effect Distribution in Silicon Irradiated with Low-Energy Ions

Dong-Ju Bai,Tomohiro Kawase,Akiyoshi Baba,Atsushi Kenjo,Taizoh Sadoh,Hiroshi Nakashima,Hiroshi Mori,Toshio Tsurushima

Research Reports on Information Science and Electrical Engineering of Kyushu University 2 59 - 59 1997年04月

低エネルギーイオン照射によるシリコンの非晶質化

白冬菊,河瀬智宏,馬場昭好,権丈淳,佐道泰造,中島寛,森紘,鶴島稔夫

九州大学大学院システム情報科学研究科報告 2 ( 1 ) 1997年04月

イオンビーム照射によるコバルトシリサイド形成機構

馬場昭好,荒牧宏隆,阿部孝幸,松下篤志,佐道泰造,権丈淳,森紘,中島寛,鶴島稔夫

九州大学中央分析センター報告 ( 15 ) 1997年04月

Effect of Energy Transport with Recoil Atoms on Deposited Energy Distribution in Silicon Irradiated with Energetic Ions

Dong-Ju Bai,Akiyoshi Baba,Atsushi Kenjo,Taizoh Sadoh,Hiroshi Nakashima,Hiroshi Mori,Toshio Tsurushima

Research Reports on Information Science and Electrical Engineering of Kyushu University 1997年04月

Evaluation of Damage Induced by Low-Energy Ion Irradiation in Silicon

Akiyoshi Baba,Taizoh Sadoh,Atsushi Kenjo,Hiroshi Nakashima,Hiroshi Mori,Toshio Tsurushima

Memoirs of the Faculty of Engineering Kyushu University 55 127 - 127 1995年04月

Behavior of Defects Induced by Low-Energy Ions in Silicon Films 査読有り

Taizoh Sadoh,Hironori Takeshita,Akiyoshi Baba,Atsushi Kenjo,Hiroshi Nakashima,Toshio Tsurushima

Jpn. J. Appl. Phys. 33 7151 - 7151 1994年04月

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