研究者詳細 - 馬場　昭好

論文 - 馬場　昭好

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Dependence of sensitivity loss on organic film thickness and influence of cantilever warpage in a piezoelectric wideband acoustic sensor coated with an organic film 査読有り

Kuchiji H., Masumoto N., Morishita K., Hasegawa S., Suzuki T., Baba A.

Japanese Journal of Applied Physics 63 ( 3 ) 2024年03月

担当区分：責任著者記述言語：英語掲載種別：研究論文（学術雑誌）

A wideband acoustic sensor is reported, comprising a piezoelectric MEMS acoustic transducer with organic film-coated cantilevers. Considering the sensitivity reduction associated with the application of an organic film, it is necessary to optimize the material selection and thickness of the organic film. Therefore, the relationship between the thickness of the polyurethane film and the consequent loss in sensitivity is elucidated. Our findings demonstrate that the polyurethane film thickness should be approximately 0.5 μm (or less) to limit sensitivity loss to 6 dB. Additionally, both simulations and experimental results reveal that the resonant frequency of the system is significantly influenced by the warpage of the cantilever. This study provides essential insights into optimizing the performance of MEMS acoustic transducers with organic film-coated cantilevers.

DOI： 10.35848/1347-4065/ad2918

Kyutacar

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An efficient polishing process for silicon carbide using ion implantation method 査読有り国際誌

Takitani S., Baba A., Nishizawa H., Suzuki K.

Japanese Journal of Applied Physics 63 ( 3 ) 2024年03月

記述言語：英語掲載種別：研究論文（学術雑誌）

We have developed an efficient polishing process for silicon carbide (SiC) using the ion implantation method. An embrittlement layer is generated by an argon ion beam with 50 kV acceleration voltage. Although colloidal silica slurry without oxidant cannot remove the SiC substrate at all, the embrittlement layer is removed by the slurry. The polishing area is defined through patterning with a resin mask during implantation. Such patterning step is expected to compatible with the damascene process on SiC substrates. Raman spectra suggest that the crystal structure of the SiC substrate is not changed after surface polishing because of the E1 and A1 characteristics.

DOI： 10.35848/1347-4065/ad308c

Scopus

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Design and Simulation of Piezoelectric Wideband Acoustic Sensor Covered with Organic Film 査読有り国際誌

Kuchiji Hiroyuki, Masumoto Naoki, Morishita Kota, Hasegawa Shunta, Takaaki Suzuki, Baba Akiyoshi

1st International Conference on Robotics, Engineering, Science, and Technology, RESTCON 2024 59 - 63 2024年02月

Piezoelectric MEMS wideband acoustic sensor coated by organic film 査読有り国際誌

Kuchiji H., Masumoto N., Baba A.

Japanese Journal of Applied Physics 62 2023年06月

担当区分：責任著者記述言語：英語掲載種別：研究論文（学術雑誌）

In this study, we developed an acoustic sensor with a structure in which a piezoelectric cantilever array is covered with an organic film. For this, we used AlN and polyurethane as the piezoelectric material and organic film, respectively. The results suggested that the sensitivity in the low-frequency region improved, and the resonance frequency increased. We investigated the resonance frequency based on a simulation and verified that it matched the measured value. Further, we created a broadband acoustic sensor by covering the space between the cantilevers with an organic film.

DOI： 10.35848/1347-4065/acbb82

Scopus

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Piezoelectric MEMS Wideband Acoustic Sensor Coated by Organic Film 査読有り国際誌

Hiroyuki Kuchiji,Naoki Masumoto,Akiyoshi Baba

Digest of 35th International Microprocesses and Nanotechnology Conference (MNC2022) 11P-4-32 2022年11月

Absolute longitudinal distance measurement verification of a standard polystyrene nanoparticle near a surface in water by means of multi-wavelength evanescent field 査読有り

Blattler A., Khajornrungruang P., Suzuki K., Baba A., Goto D.

European Society for Precision Engineering and Nanotechnology, Conference Proceedings - 22nd International Conference and Exhibition, EUSPEN 2022 385 - 388 2022年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

In the wet semiconductor process, abrasive nanoparticles are widely used in the chemical mechanical polishing (CMP) process to polish wafer surfaces for high planarization. During polishing, nanoparticles move with a high-speed three-dimensional (3D) position in the solution. In the 3D particles's moving positions, Z is a perpendicular longitudinal distance between the surface to the nanoparticle that plays a significant role in polishing, which could not be measured by general microscopy without longitudinal scanning. To understand nanoparticle phenomena near-surface, we have proposed and developed the apparatus with real-time fastmotion tracking on optical multi-wavelength evanescent fields microscopy to measure the 3D motion of the nanoparticle in water without scanning. In euspen's 2020, we could verify the relative distance ?Z of nanoparticles in water, but the absolute distance Z is unknown yet. In this manuscript, we have therefore developed an invisible nano-step height in water to verify the absolute height Z of an individual nanoparticle. The invisible nano-step height in water is made from an optical resin with a refractive index of 1.35 that is close to a refractive index of water to avoid unnecessary light during experimental verification. The nano-step height was less than 100 nm on a glass surface, fabricated using nanoimprint lithography. Polystyrene f100 nm standard particles in water were used to verify the height Z. The results of height Z of nanoparticles could be measured less than 100 nm with the measurement uncertainty ±10 nm (2s), which is related to the interferometer result of the nano-step height.

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局在光によるナノ研磨現象観測に関する研究

パームパッデーチャークンティティパット, カチョーンルンルアンパナート, 鈴木恵友, 馬場昭好

精密工学会学術講演会講演論文集 ( 公益社団法人精密工学会 ) 2021A ( 0 ) 102 - 103 2021年09月

記述言語：日本語掲載種別：研究論文（研究会，シンポジウム資料等）

The nanoscale polishing phenomena between substrate surface, 105 nm-sized SiO2 particles slurry, and polishing pad during CMP process were experimentally observed and evaluated to identify the main factors which effectively polish a 4H-SiC substrate. The nanoscale polishing phenomena were observed in-situ by our developed compact apparatus applied an optical evanescent field. The observation is able to detect the scattering light from either the nano-abrasive particles or the pad asperities when they react to the surface to being polishing. The nanoparticle motion phenomena, which two conditions (i)only nanoparticles (without pad) and (ii)nanoparticles with pad sliding, on 4H-SiC substrate were observed. According to the observed results, the observed scattering light of nanoparticle on 4H-SiC was the ellipse shape compared with the observing on SiO2 substrate. Furthermore, we could observe the particles moved nearer and then adhered on the surface. Less particle’s Brownian motion when the particle moved nearer to the surface. In case of nanoparticle with pad sliding, we could observe only the scattering light of pad sliding because the scattering light intensity of particle is quite lower than pad. Therefore, approached nanoparticle to 4H-SiC surface phenomena might be one possible role to explain higher polishing rate CMP parameter.

DOI： 10.11522/pscjspe.2021a.0_102

CiNii Research

ナノスケールにおける加工現象可視化に関する研究

ブラットラーアラン, カチョーンルンルアンパナート, 鈴木恵友, 馬場昭好

精密工学会学術講演会講演論文集 ( 公益社団法人精密工学会 ) 2021A ( 0 ) 588 - 589 2021年09月

記述言語：日本語掲載種別：研究論文（研究会，シンポジウム資料等）

An abrasive nanoparticle behavior in chemical mechanical polishing (CMP) process is a three-dimensional (3D) motion near a substrate or reference surface. The height position is a longitudinal distance between the reference surface and nanoparticle, which is a challenge for measuring the height position in a wet condition. Our previous report could estimate the relative height of polystyrene 100 nm particles by applying multi-wavelength evanescent fields, but the absolute height was not confirmed yet. Therefore, in this report, we proposed a design concept for absolute height verification by using the developed nano-step height patterns. The nano-step height was approximately less than hundred nanometers from the reference surface. The nano-step height made from an optical resin that has a refractive index close to water to decrease the scattering light during observing nanoparticles in water. Polystyrene 100 nm particles on the nano-step height were used to estimate the absolute height of nanoparticle. The proposed concept could be used to verify the nanoparticle's absolute height in water, which can be applied to clarify the nanoparticle phenomena during the CMP process in the near future.

DOI： 10.11522/pscjspe.2021a.0_588

CiNii Research

The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate 査読有り国際誌

Sethavut Duangchan, Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang

4th IEEE Electron Devices Technology and Manufacturing Conference (EDTM2020) 2020年03月

SiN used as a stressor in Germanium-On-Insulator substrate 査読有り国際誌

Sethavut Duangchan, Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang

2019 International 3D Systems Integration Conference (3DIC) 2019年10月

SiN used as a Stressor in Germanium-On-Insulator Substrate 査読有り国際誌

Duangchan S., Yamamoto K., Wang D., Nakashima H., Baba A.

IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019 2019年10月

担当区分：責任著者記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

This research aims to show the advantage of using silicon nitride as a stressor in a strained germanium-on-insulator substrate (strained Ge). A Si substrate is patterned on the surface before bonding for controlling the shape and the position of strained Ge. The SiN film is deposited on Ge substrate by PE-CVD with 150 nm thick approximately. Two substrates are bonded together by surface-Activation bonding with 200°C post-Anneal. It was found that the tensile strain of 1.16% for the flat part and 2.03% for the bucking part, which is higher than other reported GOI using SiO2 layer.

DOI： 10.1109/3DIC48104.2019.9058896

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Modulation transfer function analysis of silicon X-ray sensor with trench-structured photodiodes 査読有り

Ariyoshi Tetsuya, Iwasa Jumpei, Takane Yuta, Sakamoto Kenji, Baba Akiyoshi, Arima Yutaka

IEICE Electron. Express 15 ( 11 ) 20180177 - 20180177 2018年06月

記述言語：英語掲載種別：研究論文（学術雑誌）

A silicon X-ray sensor with trench-structured photodiodes was studied and the influence of Compton scattering was estimated. By irradiating the target pixel with X-rays and measuring the signal from adjacent pixels, X-ray scattering and pixel blur of the proposed sensor was determined. An X-ray sensor with a length of 22.6 mm was designed and fabricated, and its modulation transfer function (MTF) was obtained. A sensor structure to improve the MTF level to that of CdTe was proposed.

DOI： 10.1587/elex.15.20180177

CiNii Article

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Fabrication of silicon-on-diamond substrate with an ultrathin SiO<inf>2</inf>bonding layer 査読有り

Nagata M., Shirahama R., Duangchan S., Baba A.

Japanese Journal of Applied Physics 57 ( 6 ) 2018年06月

担当区分：責任著者記述言語：英語掲載種別：研究論文（学術雑誌）

© 2018 The Japan Society of Applied Physics. We proposed and demonstrated a sputter etching method to prepare both a flat surface (root-mean-square surface roughness of approximately 0.2-0.3 nm) and an ultrathin SiO2bonding layer at an accuracy of approximately 5 nm in thickness to fabricate a silicon-on-diamond substrate (SOD). We also investigated a plasma activation method on a SiO2surface using various gases. We found that O2plasma activation is more suitable for the bonding between SiO2and Si than N2or Ar plasma activation. We speculate that the concentration of hydroxyl groups on the SiO2surface was increased by O2plasma activation. We fabricated the SOD substrate with an ultrathin (15nm in thickness) SiO2bonding layer using the sputter etching and O2 plasma activation methods.

DOI： 10.7567/JJAP.57.06HJ08

Scopus

CiNii Article

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Silicon trench photodiodes on a wafer for efficient X-ray-to-current signal conversion using side-X-ray-irradiation mode 査読有り

Ariyoshi T., Takane Y., Iwasa J., Sakamoto K., Baba A., Arima Y.

Japanese Journal of Applied Physics 57 ( 4 ) 2018年04月

記述言語：英語掲載種別：研究論文（学術雑誌）

© 2018 The Japan Society of Applied Physics. In this paper, we report a direct-conversion-type X-ray sensor composed of trench-structured silicon photodiodes, which achieves a high X-ray-to-current conversion efficiency under side X-ray irradiation. The silicon X-ray sensor with a length of 22.6mm and a trench depth of 300 μm was fabricated using a single-poly single-metal 0.35μm process. X-rays with a tube voltage of 80kV were irradiated along the trench photodiode from the side of the test chip. The theoretical limit of X-ray-to-current conversion efficiency of 83.8% was achieved at a low reverse bias voltage of 25 V. The X-ray-to-electrical signal conversion efficiency of conventional indirect-conversion-type X-ray sensors is about 10%. Therefore, the developed sensor has a conversion efficiency that is about eight times higher than that of conventional sensors. It is expected that the developed X-ray sensor will be able to markedly lower the radiation dose required for X-ray diagnoses.

DOI： 10.7567/JJAP.57.04FH04

Scopus

CiNii Article

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Fabrication of Silicon on Diamond Structure with an Ultra-Thin SiO2 Bonding Layer by Sputter Etching Method 査読有り

Masahiro Nagata, Ryouya Shirahama, Sethavut Duangchan, Akiyoshi Baba

Digest of 30th International Microprocesses and Nanotechnology Conference (MNC2017) 8D-6-1 2017年11月

Estimation of the Conversion Properties of Trench-Structured Silicon X-ray Photodiodes by the Side X-ray Irradiation Method 査読有り

Tetsuya Ariyoshi, Yuta Takane, Jumpei Iwasa, Kenji Sakamoto, Akiyoshi Baba, Yutaka Arima

Abstracts of the 2016 International Conference on Solid State Devices and Materials 321 - 322 2017年09月

X-ray-to-current signal conversion characteristics of trench-structured photodiodes for direct-conversion-type silicon X-ray sensor 査読有り

Ariyoshi T., Funaki S., Sakamoto K., Baba A., Arima Y.

Japanese Journal of Applied Physics 56 ( 4 ) 2017年04月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

© 2017 The Japan Society of Applied Physics.To reduce the radiation dose required in medical X-ray diagnoses, we propose a high-sensitivity direct-conversion-type silicon X-ray sensor that uses trench-structured photodiodes. This sensor is advantageous in terms of its long device lifetime, noise immunity, and low power consumption because of its low bias voltage. With this sensor, it is possible to detect X-rays with almost 100% efficiency; sensitivity can therefore be improved by approximately 10 times when compared with conventional indirect-conversion-type sensors. In this study, a test chip was fabricated using a single-poly single-metal 0.35μm process. The formed trench photodiodes for the X-ray sensor were approximately 170 and 300μm deep. At a bias voltage of 25V, the absorbed X-ray-to-current signal conversion efficiencies were 89.3% (theoretical limit; 96.7%) at a trench depth of 170μm and 91.1% (theoretical limit; 94.3%) at a trench depth of 300 μm.

DOI： 10.7567/JJAP.56.04CH06

Scopus

CiNii Article

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High-performance vertical Si PiN diode by hole remaining mechanism 査読有り

Tsukuda M., Tsukuda M., Baba A., Shiba Y., Omura I.

Solid-State Electronics 129 22 - 28 2017年03月

記述言語：英語掲載種別：研究論文（学術雑誌）

© 2016 Elsevier LtdA novel diode with a unique trench shape is predicted by TCAD simulation to have high performance. The novel 600 V vertical PiN diode with hole pockets by the Bosch deep trench process shows a better trade-off curve between reverse recovery loss and forward voltage. The reverse recovery loss is reduced by half. In addition, the active chip size of the novel diode is reduced to two-thirds that of the conventional PiN diode in the same forward voltage. Thanks to the hole pockets with an electric field in the diagonal direction, the remaining hole suppresses the surge voltage with noise for high performance. In this paper, we specially focus on the analysis of phenomenon and the noise suppression mechanism during reverse recovery. The novel diode structure is a strong candidate when developing the fabrication process after silicon trench etching is established.

DOI： 10.1016/j.sse.2016.12.006

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Reduced operating temperature of active layer Si covered by nanocrystalline diamond film 査読有り

Duangchan S., Koishikawa Y., Shirahama R., Oishi K., Baba A., Matsumoto S., Hasegawa M.

Journal of Materials Science: Materials in Electronics 28 ( 1 ) 617 - 624 2017年01月

記述言語：英語掲載種別：研究論文（学術雑誌）

© 2016, Springer Science+Business Media New York.This paper reports the heat dissipation ability of nanocrystalline diamond (NCD) film used as an insulator in interconnection layers. The thermal resistance is used as an evidence for evaluating particular ability. There are two points to measure, that is to say, the temperature in the active Si region and that of the nearest point at the top of the insulating film. We used a thin film Si resistor covered with NCD or silicon dioxide (SiO2) on a silicon on insulator substrate. The NCD film was deposited by microwave-plasma chemical vapor deposition at 400 °C, while the SiO2 film was deposited by plasma-enhanced chemical vapor deposition at 350 °C. The thickness of the NCD film was 600 nm, while that of the SiO2 film was 300 and 500 nm. The aluminium (Al) was deposited by sputtering and patterned on the top of the insulating-film. Heat was applied to the resistor by directly applying electricity to the resistor. The temperature of the Si resistor and Al was determined from the resistance change. It was found that the thermal resistance of NCD film was approximately 14 % less than that of SiO2 film, leading to the reduction of the thin-film Si temperature by 20 °C, even though it was thicker than 100 nm.

DOI： 10.1007/s10854-016-5566-2

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Sensitivity Properties of a Direct Conversion Silicon X-ray Sensor with Trench-Structured Photodiodes 査読有り

Tetsuya Ariyoshi, Shota Funaki, Kenji Sakamoto, Akiyoshi Baba, Yutaka Arima

Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials 141 - 142 2016年09月

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