Updated on 2024/05/21

 
SHINKAI Satoko
 
Scopus Paper Info  
Total Paper Count: 0  Total Citation Count: 0  h-index: 2

Citation count denotes the number of citations in papers published for a particular year.

Affiliation
Faculty of Computer Science and Systems Engineering Department of Physics and Information Technology
Job
Associate Professor
External link

Research Interests

  • Ga2O3

  • process

  • dry etching

  • wet etching

  • Semiconductor

  • GaN

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

Biography in Kyutech

  • 2021.04
     

    Kyushu Institute of Technology   Faculty of Computer Science and Systems Engineering   Department of Physics and Information Technology   Associate Professor  

  • 2010.04
    -
    2021.03
     

    Kyushu Institute of Technology   Organization for Promotion of Research and Open Innovation   Center for Microelectronic Systems   Associate Professor  

Academic Society Memberships

  • 1996.04   電子情報通信学会   Japan

Papers

  • Study on electrical characterization of hexagonal-BN Reviewed

    Yamanishi R., Motoda S., Shinkai S., Hasegawa M.

    2022 IEEE CPMT Symposium Japan, ICSJ 2022   96 - 97   2022.01

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)

    DOI: 10.1109/ICSJ55786.2022.10034732

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    Other Link: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85148684628&origin=inward

  • Loss Properties of Anodized Thin-Film Capacitors Fabricated Using Hf-Doped Nb Alloy Films Reviewed

    Tomoharu Shibata, Hidefumi Kimizaki, Satoko Shinkai, Katsutaka Sasaki, Hideto Yanagisawa, Misao Yamane, and Yoshio Abe

    Japanese Journal of Applied Physics   48   085504   2009.08

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  • Crystal Orientation of Epitaxial α-Ta(110) Thin Films Grown on Si(100) and Si(111) Substrates by Sputtering Reviewed

    Masahiro Kudo, Satoko Shinkai, Hideto Yanagisawa, Katsutaka Sasaki, and Yoshio Abe

    Japanese Journal of Applied Physics   47   5608 - 5612   2008.07

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  • Epitaxial Growth of (0001)Ru Thin Films on (111)ZrN/(111)Si by LowTemperature Process and Their Surface Morphologies Reviewed

    Katsutaka Sasaki,Hideto Yanagisawa,Satoko Shinkai,Yoshio Abe,Junpei

    Japanese Journal of Applied Physics   47 ( 3 )   2008.03

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  • Preparation of Thin-Film Capacitor with High Reliability by Anodization of Zr-Al Alloy Film Reviewed

    Naohiro Mikuni,Tomoharu Shibata,Satoko Shinkai,Katsutaka Sasaki,Hideto Yanagisawa,Misao Yamane,and Yoshio Abe

    Japanese Journal of Applied Physics   46 ( 8A )   5249 - 5253   2007.08

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  • Development of a compact angle-resolved secondary ion mass spectrometer for Ar+ sputtering Reviewed

    S. Kawaguchi,M. Tanemura,M. Kudo,N. Handa,N. Kinoshita,L. Miao,S. Tanemura,Y. Gotoh,M. Liao,S. Shinkai

    Vacuum   80   768 - 770   2006.04

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  • Angle Dependent Sputtering and Dimer Formation from Vanadium Nitride Target by Ar+ ion Bombaredment Reviewed

    S. Kawaguchi,M. Kudo,M. Tanemura,L. Miao,S. Tanemura,Y. Gotoh,M. Liao,S. Shinkai

    Adv. Mater. Res.   11-12   607 - 610   2006.04

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  • Preparation of Single-Oriented (111)VN Film with Low-Resistivity and Its Application as Diffusion Barrier between Cu and Si Reviewed

    Ken-ichi YOSHIMOTO,Fumihiro KAIYA,Satoko SHINKAI,Katsutaka SASAKI,and Hideto YANAGISAWA

    Japanese Journal of Applied Physics   45 ( 1A )   215 - 220   2006.01

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)

  • Electrical Properties of a Thin Anodized Capacitor Made of Y-Doped Al Alloy Film Reviewed

    Tomotake ONOZUKA,Hayato SASAKI,NaohiroMIKUNI,Satoko SHINKAI,Katsutaka SASAKI,Misao YAMANE

    Japanese Journal of Applied Physics   44 ( 9A )   6731 - 6735   2005.09

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  • Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer Reviewed

    X. Xu,R. Armitage,Satoko Shinkai,Katsutaka Sasaki,C. Kisielowski and E. R. Weber

    APPLIED PHYSICS LETTERS   86   182104 - 182104   2005.04

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  • Development of a compact angle-resolved secondary ion mass spectrometer Reviewed

    Shinichi Kawaguchi,Masaki Tanemura,Masato Kudo,Nobumasa Handa,Naokazu Kinoshita,Lei Miao,Sakae Tanemura,Yasuhito Gotoh,Meiyong Liao,Satoko Shinkai

    The Eighth International Symposium on Sputtering and Plasma Processes   2005.04

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    2005.04  -  2005.04

  • Effects of Sputtering Parameters on the Formation of Single-Oriented (002) Ti Film on Si Reviewed

    Kazuhiro MIREBA,Satoko SHINKAI,Hideto YANAGISAWA,Katsutaka SASAKI and Yoshio ABE

    Japanese Journal of Applied Physics   44 ( 1A )   358 - 376   2005.01

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  • Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process Reviewed

    Hideto YANAGISAWA,Satoko SHINKAI,Katsutaka SASAKI,Yoshio ABE,Akira SAKAI

    Japanese Journal of Applied Physics   44 ( 1A )   343 - 349   2005.01

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  • Improvement of the Crystal Orientation and Surface Roughness of Ru Thin Films by Introducing Oxygen during Sputtering Reviewed

    Yoshio ABE,Satoko SHINKAI,Katsutaka SASAKI,Jiwang YAN and Kouki MAEKAWA

    Japanese Journal of Applied Physics, Part 1   43 ( 1 )   277 - 280   2004.04

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  • Difference in Thermal Degradation Behavior of ZrO2 and HfO2 Anodized Capacitors Reviewed

    Masahiro KAMIJYO,Tomotake ONOZUKA,Naoto YOSHIDA,Satoko SHINKAI,Katsutaka SASAKI,Misao YAMANE

    Japanese Journal of Applied Physics   43 ( 9A )   6217 - 6220   2004.04

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  • Realization of Sequential Epitaxial Growth of Cu/HfN Bilayered Films on (111) and (001)Si Reviewed

    Satoko SHINKAI,Katsutaka SASAKI,Hideto YANAGISAWA and Yoshio ABE

    Japanese Journal of Applied Physics, Part 1   42 ( 10 )   6518 - 6522   2003.04

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  • Capacitor Property and Leakage Current Mechanism of ZrO2 Thin Dielectric Films Prepared by Anodic Oxidation Reviewed

    Masahiro KAMIJYO,Tomotake ONOZUKA,Satoko SHINKAI,Katsutaka SASAKI,Misao YAMANE and Yoshio ABE

    Japanese Journal of Applied Physics, Part 1   42 ( 7A )   4399 - 4403   2003.04

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  • Epitaxial Ir Thin Film on (001)MgO Single Crystal Prepared by Sputtering Reviewed

    Takeshi ISHIKAWA,Yoshio ABE,Satoko SHINKAI,Katsutaka SASAKI

    Japanese Journal of Applied Physics, Part 1   42 ( 9A )   5747 - 5748   2003.04

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  • Preparation of Low-Resistivity α-Ta Thin Films on (001)Si by Conventional DC Magnetron Sputtering Reviewed

    Masayuki SHIOJIRI,Satoko SHINKAI,Katsutaka SASAKI,Hideto YANAGISAWA and Yoshio ABE

    Japanese Journal of Applied Physics, Part 1   42 ( 7A )   4499 - 4500   2003.04

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  • Improvement of crystal orientation and surface roughness of sputtered Ru thin films Reviewed

    Yoshio ABE,Satoko SHINKAI,Katsutaka SASAKI,Jiwang YAN and Kouki MAEKAWA

    The Seventh International Symposium on Sputtering and Plasma Processes, Proceedings   191 - 194   2003.04

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    2003.04  -  2003.04

  • Influence of sputtering parameters on the formation process of single-oriented (002)Ti film on Si Reviewed

    Kazuhiro MIREBA,Satoko SHINKAI,Katsutaka SASAKI,Hideto YANAGISAWA and Yoshio ABE

    The Seventh International Symposium on Sputtering and Plasma Processes, Proceedings   451 - 454   2003.04

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    2003.04  -  2003.04

  • Realization of sequential epitaxial growth of Cu/HfN bilayered films on (111) and (001)Si Reviewed

    Satoko SHINKAI,Katsutaka SASAKI,Hideto YANAGISAWA and Yoshio ABE

    The Seventh International Symposium on Sputtering and Plasma Processes, Proceedings   459 - 462   2003.04

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    2003.04  -  2003.04

  • Epitaxial growth of high-quality α-Ta film on (001)Si substrate Reviewed

    Masahiro KUDO,Satoko SHINKAI,Katsutaka SASAKI,Hideto YANAGISAWA and Yoshio ABE

    The Seventh International Symposium on Sputtering and Plasma Processes, Proceedings   471 - 474   2003.04

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    2003.04  -  2003.04

  • Lattice-matched HfN Buffer Layers for Epitaxy of GaN on Si Reviewed

    R. Armitage,Qing Yang,H. Feick,J. Gebauer,E. R. Weber,Satoko Shinkai,Katsutaka Sasaki

    Applied Physics Letter   87 ( 8 )   1450 - 1452   2002.04

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  • Electrical Properties of HfO2 Thin Insulating Film Prepared by Anodic Oxidation Reviewed

    Hideto YANAGISAWA,Masahiro KAMIJYO,Satoko SHINKAI,Katsutaka SASAKI,Yoshio ABE and Misao YAMANE

    Japanese Journal of Applied Physics, Part 1   41 ( 8 )   5284 - 5287   2002.04

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  • Preparation of a Contact System with a Single-Oriented (111)Al Overlayer by Interposing a Thin ZrN/Zr Bilayered Barrier Applicable to Sub-0.25-μm Design Rule Reviewed

    Hidekazu MIYAKE,Hideto YANAGISAWA,Katsutaka SASAKI,Satoko SHINKAI,Yoshio ABE

    Japanese Journal of Applied Physics, Part 1   40 ( 6A )   4193 - 4194   2001.04

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  • Realization of Cu (111) Single-Oriented State on SiO2 by Annealing Cu-Zr Film and the Thermal Stability of Cu-Zr/ZrN/Zr/Si Contact System Reviewed

    Katsutaka SASAKI,Hidekazu MIYAKE,Satoko SHINKAI,Yoshio ABE and Hideto YANAGISAWA

    Japanese Journal of Applied Physics, Part 1   40 ( 7 )   4661 - 4665   2001.04

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  • (111)Si上にエピタキシャル成長させた(111)HfN膜と(111)Cu/(111)HfN積層膜のAFM観察

    新海聡子,佐々木克孝

    電子情報通信学会, 技術研究報告 CPM 2001-43   19 - 24   2001.04

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  • Application of HfN/Hf Bilayered Film as a Diffusion Barrier for Cu Metallization System of Si Large-Scale Integration Reviewed

    Ken-ichi YOSHIMOTO,Satoko SHINKAI,Katsutaka SASAKI

    Japanese Journal of Applied Physics, Part 1   39 ( 4A )   1835 - 1839   2000.04

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  • Sequential Single-Oriented Growth of (111)Cu/(111)HfN/(002)Hf Trilayered Film on (001)Si and its Thermal Stability Reviewed

    Satoko SHINKAI,Ken-ichi YOSHIMOTO,Yasuhiro KITADA and Katsutaka SASAKI

    Japanese Journal of Applied Physics, Part 1, Vol. 39, No. 10, pp. 5995-5999 (2000)   39 ( 10 )   5995 - 5999   2000.04

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  • Interfacial Solid-Phase Reaction in Al/HfN/Hf/Si Contact System during Postmetallization Annealing Reviewed

    Satoko SHINKAI,Katsutaka SASAKI

    Japanese Journal of Applied Physics, Part 1   39 ( 3A )   1264 - 1267   2000.04

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  • (111)Si上(111)Cu/(111)HfN2層膜の連続エピタキシャル成長と(111)HfN膜の拡散バリア特性

    新海聡子,佐々木克孝

    電子情報通信学会, 技術研究報告 CPM 2000-122   33 - 38   2000.04

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  • 薄いZrN/Zr2層膜を介在させたAl/ZrN/Zr/Siコンタクト系の熱的安定性

    三宅秀和,柳沢英人,新海聡子,佐々木克孝,阿部良夫

    電子情報通信学会, 技術研究報告 CPM 2000-83   79 - 83   2000.04

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  • (001)Si上(111)Cu/(111)HfN/(002)Hf三層膜の連続単配向成長に及ぼすHf膜厚の影響

    北田泰裕,新海聡子,柳沢英人,佐々木克孝,阿部良夫

    電子情報通信学会, 技術研究報告 CPM 2000-82   73 - 78   2000.04

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  • Influence of Sputtering Parameters on the Formation Process of High-Quality and Low-Resistivity HfN Thin Film Reviewed

    Satoko SHINKAI,Katsutaka SASAKI

    Japanese Journal of Applied Physics, Part 1   38 ( 4A )   2097 - 2102   1999.04

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  • Epitaxial Growth of HfN Film and Sequential Single-Oriented Growth of Al/HfN Bilayered Film on (001) and (111)Si Reviewed

    Satoko SHINKAI,Katsutaka SASAKI

    Japanese Journal of Applied Physics, Part 1, Vol. 38, No. 6A, pp. 3646-3650 (1999)   38 ( 6A )   3646 - 3650   1999.04

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  • Application of Al3Hf/Hf Bilayered Film as a Diffusion Barrier to Al Metallization System of Si Large-Scale Integration Reviewed

    Satoko SHINKAI,Katsutaka SASAKI and Yoshio ABE

    Japanese Journal of Applied Physics, Part 1   37 ( 11 )   6146 - 6152   1998.04

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  • Initial Silicide Formation Process of Single Oriented (002)Hf Film on Si and its Diffusion Barrier Property Reviewed

    Satoko SHINKAI,Katsutaka SASAKI,Yoshio ABE and Hideto YANAGISAWA

    Japanese Journal of Applied Physics, Part 1   37 ( 4A )   2002 - 2006   1998.04

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  • Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process Reviewed

    Hideto YANAGISAWA,Katsutaka SASAKI,Yoshio ABE,Midori KAWAMURA,Satoko SHINKAI

    Japanese Journal of Applied Physics, Part 1   37 ( 10 )   5714 - 5718   1998.04

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  • A Study on the Preparation Conditions of Single Oriented (002)Hf Film on n-(001)Si Reviewed

    Satoko SHINKAI,Hideto YANAGISAWA,Katsutaka SASAKI and Yoshio ABE

    Japanese Journal of Applied Physics, Part 1   37 ( 2 )   643 - 648   1998.04

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  • Alメタライゼーション系へのAl3Hf/Hf積層膜の拡散バリヤとしての適用

    新海聡子,佐々木克孝,阿部良夫,柳沢英人

    電子情報通信学会, 技術研究報告, SDM 97-184   49 - 55   1998.04

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  • (001)Siと(111)Si上へのAl/HfN積層膜の連続単配向成長条件の検討

    新海聡子,佐々木克孝

    電子情報通信学会, 技術研究報告, CPM 98-118   35 - 40   1998.04

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  • Al3Hf金属間化合物膜の結晶化過程と電気的特性 Reviewed

    新海聡子,柳沢英人,川村みどり,阿部良夫,佐々木克孝

    電子情報通信学会論文誌(C-II)   J80-C-II ( 9 )   309 - 311   1997.04

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    主要雑誌

  • n-(001)Si上への単配向Hf膜の作製条件の検討

    新海聡子,柳沢英人,川村みどり,阿部良夫,佐々木克孝

    電子情報通信学会, 技術研究報告 CPM 97-56   27 - 33   1997.04

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    技術研究報告

▼display all

Conference Prsentations (Oral, Poster)

  • 同時スパッタで作製したNb-Hf合金膜による陽極酸化膜キャパシタの損失特性

    応用物理学会 2009年春季 第56回応用物理学関係連合講演会 

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    Event date: 2009.04   Language:Japanese  

  • Hfを添加したNb合金による陽極酸化膜キャパシタの損失特性

    北見工業大学,柴田智晴

    2008年秋季 第69回応用物理学会学術講演会 

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    Event date: 2008.09   Language:Japanese  

  • TiNゲートAlGaN/GaN HFETの特性評価

    2007年秋季 第68回応用物理学会学術講演会 

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    Event date: 2007.09   Language:Japanese  

  • n-GaNへの高温処理ZrN電極ショットキー特性

    2007年秋季 第68回応用物理学会学術講演会 

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    Event date: 2007.09   Language:Japanese  

  • Zr-Al 陽極酸化膜から作製した薄膜キャパシタのキャパシタ特性と漏れ電流機構

    未入力 

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    Event date: 2007.03   Language:Japanese  

  • 低温プロセスによる(001)Ge上における(001)TiN薄膜のエピタキシャル成長

    第54回応用物理学関係連合講演会 

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    Event date: 2007.03   Language:Japanese  

  • (111)Si上でのCu/Ru/ZrN配線膜の連続エピタキシャル成長とその表面形態

    応用物理学会, 2006年秋季 第67回応用物理学会学術講演会 

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    Event date: 2006.08   Language:Japanese  

  • (001)Si基板上での極薄TaN膜のエピタキシャル成長とその表面形態

    応用物理学会, 2006年春季 第53回応用物理学関係連合講演会 

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    Event date: 2006.03   Language:Japanese  

  • (111)Si上でのRu/ZrN積層膜の連続エピタキシャル成長とその表面形態

    応用物理学会, 2006年春季 第53回応用物理学関係連合講演会 

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    Event date: 2006.03   Language:Japanese  

  • (001)Si上極薄エピタキシャル(001)TiN膜の電気的特性とその表面形態

    応用物理学会, 2006年春季 第53回応用物理学関係連合講演会 

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    Event date: 2006.03   Language:Japanese  

  • (001)ZrN/(001)Si上におけるCu膜の連続エピタキシャル成長とその表面形態

    応用物理学会, 2005年秋季 第66回応用物理学会学術講演会 

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    Event date: 2005.09   Language:Japanese  

  • (001)Si基板上における(001)TiN膜の低温エピタキシャル成長

    応用物理学会, 2005年秋季 第66回応用物理学会学術講演会 

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    Event date: 2005.09   Language:Japanese  

  • 化学量論的なTaN薄膜の(100)Si上での室温エピタキシャル成長

    電子情報通信学会, 2005年ソサイエティ大会講演会 

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    Event date: 2005.09   Language:Japanese  

  • 低温プロセスによる(111)Si上における(111)ZrN薄膜のエピタキシャル成長

    応用物理学会, 平成17年春季第52回応用物理学関係連合講演会 

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    Event date: 2005.03   Language:Japanese  

  • Y添加したAl陽極酸化膜キャパシタの電気的特性とその熱劣化機構

    応用物理学会, 平成17年春季第52回応用物理学関係連合講演会 

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    Event date: 2005.03   Language:Japanese  

  • 真空中熱処理及び基盤温度上昇に伴って発現する(100)Si上(110)α-Ta膜のエピタキシャル成長機構

    第45回真空に関する連合講演会 

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    Event date: 2004.10   Language:Japanese  

  • スパッタ法により作製した窒化ハフニウム薄膜の配向性と電子放出特性

    第45回真空に関する連合講演会 

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    Event date: 2004.10   Language:Japanese  

  • VN薄膜からのスパッタイオンの放出角度分布測定

    応用物理学会, 平成16年秋季第65回応用物理学会学術講演会 

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    Event date: 2004.09   Language:Japanese  

  • (001)Si上Ta膜の真空中アニール温度の上昇に伴うβ-Taからα-Taへの相変化

    応用物理学会, 平成16年春季第51回応用物理学関係連合講演会 

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    Event date: 2004.03   Language:Japanese  

  • HfN薄膜からのスパッタイオンの放出角度分布測定

    応用物理学会, 平成16年春季第51回応用物理学関係連合講演会 

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    Event date: 2004.03   Language:Japanese  

  • (001)Si 上における(001)ZrN膜のエピタキシャル成長とその品質評価

    応用物理学会, 平成16年春季第51回応用物理学関係連合講演会 

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    Event date: 2004.03   Language:Japanese  

  • ZrとHfによる陽極酸化膜キャパシタの熱劣化機構の違い

    応用物理学会, 平成16年春季第51回応用物理学関係連合講演会 

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    Event date: 2004.03   Language:Japanese  

  • (111)Si基板上での(110)α-Ta膜のエピタキシャル成長に及ぼす基板温度の影響

    応用物理学会, 平成16年春季第51回応用物理学関係連合講演会 

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    Event date: 2004.03   Language:Japanese  

  • Si上への(002)単配向Ti膜の実現

    応用物理学会, 平成15年春季第50回応用物理学関係連合講演会 

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    Event date: 2003.03   Language:Japanese  

  • HfN/Si上におけるCu膜の連続エピタキシャル成長とその表面形態

    応用物理学会, 平成15年春季第50回応用物理学関係連合講演会 

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    Event date: 2003.03   Language:Japanese  

  • (001)Si基板上でのα-Ta(110)面のエピタキシャル成長

    応用物理学会, 平成15年春季第50回応用物理学関係連合講演会 

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    Event date: 2003.03   Language:Japanese  

  • エピタキシャル成長HfN/Si系と連続エピタキシャル成長Cu/HfN/Si系の表面形態

    応用物理学会, 平成13年度秋季第62回応用物理学会学術講演会 

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    Event date: 2001.09   Language:Japanese  

  • DCマグネトロンスパッタ法による高品質なα-Ta膜の作製

    応用物理学会, 平成13年度秋季第62回応用物理学会学術講演会 

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    Event date: 2001.09   Language:Japanese  

  • (111)Si上にエピタキシャル成長させた(111)HfN膜と(111)Cu/(111)HfN積層膜のAFM観察

    本人

    電子情報通信学会, 電子部品・材料研究会 (CPM) 

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    Event date: 2001.08   Language:Japanese  

  • (111)Si上(111)Cu/(111)HfN2層膜の連続エピタキシャル成長と(111)HfN膜の拡散バリア特性

    本人

    電子情報通信学会, 電子部品・材料研究会 (CPM) 

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    Event date: 2000.10   Language:Japanese  

  • 連続単配向成長(111)Cu/(111)HfN/(002)Hf/(001)Siコンタクト系の熱的安定性

    応用物理学会, 平成12年度秋季第61回応用物理学会学術講演会 

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    Event date: 2000.09   Language:Japanese  

  • Cuメタライゼーション系へのZrN/Zr積層膜の適用

    応用物理学会, 平成12年度秋季第61回応用物理学会学術講演会 

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    Event date: 2000.09   Language:Japanese  

  • (001)Si上(111)Cu/(111)HfN/(002)Hf三層膜の連続単配向成長に及ぼすHf膜厚の影響

    電子情報通信学会,電子部品・材料研究会 (CPM) 

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    Event date: 2000.08   Language:Japanese  

  • 薄いZrN/Zr2層膜を介在させたAl/ZrN/Zr/Siコンタクト系の熱的安定性

    電子情報通信学会, 電子部品・材料研究会 (CPM) 

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    Event date: 2000.08   Language:Japanese  

  • (001)Si上へのAl/HfN/Hf積層膜の連続単配向成長

    本人

    応用物理学会, 平成11年度秋季第60回応用物理学会学術講演会 

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    Event date: 1999.09   Language:Japanese  

  • (001)Siと(111)Si上へのAl/HfN積層膜の連続単配向成長条件の検討

    本人

    電子情報通信学会, 電子部品・材料研究会 (CPM) 

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    Event date: 1998.10   Language:Japanese  

  • 高品質で低抵抗なHfN膜の形成過程に及ぼすスパッタリング因子の影響

    応用物理学会, 平成10年度秋季第59回応用物理学会学術講演会 

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    Event date: 1998.09   Language:Japanese  

  • Alメタライゼーション系へのAl3Hf/Hf積層膜の拡散バリヤとしての適用

    本人

    電子情報通信学会, シリコン材料・デバイス研究会 (SDM) 

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    Event date: 1998.01   Language:Japanese  

  • Hfシリサイドの初期形成過程について

    本人

    電子情報通信学会, 平成9年度電気関係学会北海道支部連合大会 

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    Event date: 1997.10   Language:Japanese  

  • n-(001)Si上への単配向Hf膜の作製条件の検討

    電子情報通信学会, 電子部品・材料研究会 (CPM) 

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    Event date: 1997.08   Language:Japanese  

  • 連続交互スパッタ法で作製したAl3Hf金属間化合物膜の結晶化過程

    本人

    応用物理学会, 第32回応用物理学会北海道支部大会 

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    Event date: 1996.11   Language:Japanese  

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Industrial Property

  • 表面処理溶液,表面処理溶液の製造方法及び表面処理方法

    新海聡子,宇崎滉太

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    Application no:特願2018-097983  Date applied:2018.05.22

    Patent/Registration no:特7219947  Date registered:2023.02.01 

  • 半導体装置の製造方法

    新海 聡子

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    Patent/Registration no:特開2013-206991  Date registered:2013.10.01 

Lectures

  • The Latest Trend of Semiconductors

    2022 7th International Conference on Business and Industrial Research  2022.05  Thai-Nichi Institute of Technology (TNI) and Artificial Intelligence Association of Thailand (AIAT)

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    Event date: 2022.05.19 - 2022.05.20   Language:English   Presentation type:Keynote lecture   Venue:Thailand   Country:Thailand  

    Other Link: https://icbir.tni.ac.th/keynote/

Grants-in-Aid for Scientific Research

  • タンタル拡散バリアの有用性探索

    Grant number:19760015  2007.04 - 2009.03   若手研究(B)

Social activity outside the university

  • SDGs 目標7と目標13への取り組みCO2削減を考える〜カーボンニュートラルを実現するためには〜

    Role(s):Lecturer

    九州工業大学  福岡県立折尾高等学校  2023.08.30

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    Audience: High school students

    Type:Visiting lecture

  • SDGs 目標7と目標13への取り組みCO2削減を考える〜カーボンニュートラルを実現するためには〜

    Role(s):Lecturer

    九州工業大学  熊本県立人吉高等学校  2023.07.07

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    Audience: High school students

    Type:Visiting lecture

  • 情報工学のもたらす新世界探訪-情報工学の可能性は∞-

    Role(s):Lecturer

    九州工業大学  福岡県立明善高等学校  2023.07.06

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    Audience: High school students

    Type:Visiting lecture

  • 情報工学のもたらす新世界探訪-情報工学の可能性は∞-

    Role(s):Lecturer

    九州工業大学  福岡県立講倫館高校  2023.06.02

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    Audience: High school students

    Type:Visiting lecture

  • 情報工学のもたらす新世界探訪-情報工学の可能性は∞-

    Role(s):Lecturer

    九州工業大学  福岡県立魁誠高等学校  2023.05.12

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    Audience: High school students

    Type:Visiting lecture

  • 情報工学のもたらす新世界探訪-情報工学の可能性は∞-

    Role(s):Lecturer

    九州工業大学  福岡県立嘉穂高等学校  2022.11.29

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    Audience: High school students

    Type:Visiting lecture

  • 半導体不足ってどういうこと?―5GやAIを支える半導体とは何か、また半導体不足がどのようにして起きているのかを解説します。―

    Role(s):Lecturer

    九州工業大学  九州産業大学付属九州産業高等学校  2022.10.28

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    Audience: High school students

    Type:Visiting lecture

  • 情報工学のもたらす新世界探訪-情報工学の可能性は∞-

    Role(s):Lecturer

    九州工業大学  筑紫女学園高等学校  2022.07.21

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    Audience: High school students

    Type:Visiting lecture

  • 情報工学のもたらす新世界探訪-情報工学の可能性は∞-

    Role(s):Lecturer

    九州工業大学  福岡県立光陵高等学校  2022.07.05

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    Audience: High school students

    Type:Visiting lecture

  • 情報工学のもたらす新世界探訪-情報工学の可能性は∞-

    Role(s):Lecturer

    九州工業大学  大分県臼杵高等学校  2022.06.15

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    Audience: High school students

    Type:Visiting lecture

  • MOSトランジスタ試作実習

    2011.09

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    Type:Seminar, workshop

  • IKKAN

    2011.08

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    Type:Seminar, workshop

  • pn接合試作実習(学外)

    2011.08

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    Type:Seminar, workshop

  • pn接合試作実習(学外)

    2011.03

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    Type:Seminar, workshop

  • Kyutech & NTUST students internship training

    2011.03

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    Type:Seminar, workshop

  • 大分県との連携事業

    2010.09

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    Type:Seminar, workshop

  • MOSトランジスタ試作実習

    2010.09

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    Type:Seminar, workshop

  • 大分県との連携事業

    2009.09

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    Type:Seminar, workshop

  • pn接合試作実習(学内)

    2009.08

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    Type:Seminar, workshop

  • 大分県との連携事業

    2008.09

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    Type:Seminar, workshop

  • pn接合試作実習(学内)

    2008.08

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    Type:Seminar, workshop

  • pn接合試作実習(学外)

    2008.03

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    Type:Seminar, workshop

  • 大分県との連携事業

    2007.09

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    Type:Seminar, workshop

  • pn接合試作実習(学内)

    2007.09

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    Type:Seminar, workshop

  • 中核人材育成事業

    2007.08

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    Type:Seminar, workshop

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