担当区分：責任著者   記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

The sample was prepared by bonding the Al2O3surfaces of a GaN device and a Si device. The bonding sample was etched from the (111)Si side, which is the supporting substrate of the GaN device, to create a TSV (Through Semiconductor Via). By optimizing each process, it was achieved a TSV with a smooth bottom surface at the bonding sample.

DOI： 10.1109/ICSJ62869.2024.10804716

Scopus

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記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）

Gallium Nitride(GaN) power devices have been one of the promising candidates for high-frequency and high-efficiency switching applications. However, this is not realized in current GaN power-supply products with CMOS devices where the wiring between them creates a high parasitic loss. Heterogeneous integration of them could be desirable. Two integration techniques can be employed for such 3D stacking - i) CMOS devices stacked on the GaN power devices, and ii) GaN power devices stacked on CMOS devices. Simulation results show that the GaN power devices stacked on CMOS devices is better than the alternate option. A manufacturing flow is developed to stack GaN power devices on CMOS devices through a room-temperature direct bonding process. This process enables 3D stacking without a temporary bonding and debonding process, as well, it can completely remove the buffer layer between GaN and CMOS for better efficiency.

DOI： 10.1109/ECTC51909.2023.00289

Scopus

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