論文 - 新海 聡子
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Study on electrical characterization of hexagonal-BN 査読有り
Yamanishi R., Motoda S., Shinkai S., Hasegawa M.
2022 IEEE CPMT Symposium Japan, ICSJ 2022 96 - 97 2022年01月
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Loss Properties of Anodized Thin-Film Capacitors Fabricated Using Hf-Doped Nb Alloy Films 査読有り
Tomoharu Shibata, Hidefumi Kimizaki, Satoko Shinkai, Katsutaka Sasaki, Hideto Yanagisawa, Misao Yamane, and Yoshio Abe
Japanese Journal of Applied Physics 48 085504 2009年08月
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Crystal Orientation of Epitaxial α-Ta(110) Thin Films Grown on Si(100) and Si(111) Substrates by Sputtering 査読有り
Masahiro Kudo, Satoko Shinkai, Hideto Yanagisawa, Katsutaka Sasaki, and Yoshio Abe
Japanese Journal of Applied Physics 47 5608 - 5612 2008年07月
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Epitaxial Growth of (0001)Ru Thin Films on (111)ZrN/(111)Si by LowTemperature Process and Their Surface Morphologies 査読有り
Katsutaka Sasaki,Hideto Yanagisawa,Satoko Shinkai,Yoshio Abe,Junpei
Japanese Journal of Applied Physics 47 ( 3 ) 2008年03月
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Preparation of Thin-Film Capacitor with High Reliability by Anodization of Zr-Al Alloy Film 査読有り
Naohiro Mikuni,Tomoharu Shibata,Satoko Shinkai,Katsutaka Sasaki,Hideto Yanagisawa,Misao Yamane,and Yoshio Abe
Japanese Journal of Applied Physics 46 ( 8A ) 5249 - 5253 2007年08月
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Development of a compact angle-resolved secondary ion mass spectrometer for Ar+ sputtering 査読有り
S. Kawaguchi,M. Tanemura,M. Kudo,N. Handa,N. Kinoshita,L. Miao,S. Tanemura,Y. Gotoh,M. Liao,S. Shinkai
Vacuum 80 768 - 770 2006年04月
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Angle Dependent Sputtering and Dimer Formation from Vanadium Nitride Target by Ar+ ion Bombaredment 査読有り
S. Kawaguchi,M. Kudo,M. Tanemura,L. Miao,S. Tanemura,Y. Gotoh,M. Liao,S. Shinkai
Adv. Mater. Res. 11-12 607 - 610 2006年04月
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Preparation of Single-Oriented (111)VN Film with Low-Resistivity and Its Application as Diffusion Barrier between Cu and Si 査読有り
Ken-ichi YOSHIMOTO,Fumihiro KAIYA,Satoko SHINKAI,Katsutaka SASAKI,and Hideto YANAGISAWA
Japanese Journal of Applied Physics 45 ( 1A ) 215 - 220 2006年01月
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Electrical Properties of a Thin Anodized Capacitor Made of Y-Doped Al Alloy Film 査読有り
Tomotake ONOZUKA,Hayato SASAKI,NaohiroMIKUNI,Satoko SHINKAI,Katsutaka SASAKI,Misao YAMANE
Japanese Journal of Applied Physics 44 ( 9A ) 6731 - 6735 2005年09月
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Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer 査読有り
X. Xu,R. Armitage,Satoko Shinkai,Katsutaka Sasaki,C. Kisielowski and E. R. Weber
APPLIED PHYSICS LETTERS 86 182104 - 182104 2005年04月
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Development of a compact angle-resolved secondary ion mass spectrometer 査読有り
Shinichi Kawaguchi,Masaki Tanemura,Masato Kudo,Nobumasa Handa,Naokazu Kinoshita,Lei Miao,Sakae Tanemura,Yasuhito Gotoh,Meiyong Liao,Satoko Shinkai
The Eighth International Symposium on Sputtering and Plasma Processes 2005年04月
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Effects of Sputtering Parameters on the Formation of Single-Oriented (002) Ti Film on Si 査読有り
Kazuhiro MIREBA,Satoko SHINKAI,Hideto YANAGISAWA,Katsutaka SASAKI and Yoshio ABE
Japanese Journal of Applied Physics 44 ( 1A ) 358 - 376 2005年01月
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Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process 査読有り
Hideto YANAGISAWA,Satoko SHINKAI,Katsutaka SASAKI,Yoshio ABE,Akira SAKAI
Japanese Journal of Applied Physics 44 ( 1A ) 343 - 349 2005年01月
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Improvement of the Crystal Orientation and Surface Roughness of Ru Thin Films by Introducing Oxygen during Sputtering 査読有り
Yoshio ABE,Satoko SHINKAI,Katsutaka SASAKI,Jiwang YAN and Kouki MAEKAWA
Japanese Journal of Applied Physics, Part 1 43 ( 1 ) 277 - 280 2004年04月
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Difference in Thermal Degradation Behavior of ZrO2 and HfO2 Anodized Capacitors 査読有り
Masahiro KAMIJYO,Tomotake ONOZUKA,Naoto YOSHIDA,Satoko SHINKAI,Katsutaka SASAKI,Misao YAMANE
Japanese Journal of Applied Physics 43 ( 9A ) 6217 - 6220 2004年04月
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Realization of Sequential Epitaxial Growth of Cu/HfN Bilayered Films on (111) and (001)Si 査読有り
Satoko SHINKAI,Katsutaka SASAKI,Hideto YANAGISAWA and Yoshio ABE
Japanese Journal of Applied Physics, Part 1 42 ( 10 ) 6518 - 6522 2003年04月
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Capacitor Property and Leakage Current Mechanism of ZrO2 Thin Dielectric Films Prepared by Anodic Oxidation 査読有り
Masahiro KAMIJYO,Tomotake ONOZUKA,Satoko SHINKAI,Katsutaka SASAKI,Misao YAMANE and Yoshio ABE
Japanese Journal of Applied Physics, Part 1 42 ( 7A ) 4399 - 4403 2003年04月
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Epitaxial Ir Thin Film on (001)MgO Single Crystal Prepared by Sputtering 査読有り
Takeshi ISHIKAWA,Yoshio ABE,Satoko SHINKAI,Katsutaka SASAKI
Japanese Journal of Applied Physics, Part 1 42 ( 9A ) 5747 - 5748 2003年04月
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Preparation of Low-Resistivity α-Ta Thin Films on (001)Si by Conventional DC Magnetron Sputtering 査読有り
Masayuki SHIOJIRI,Satoko SHINKAI,Katsutaka SASAKI,Hideto YANAGISAWA and Yoshio ABE
Japanese Journal of Applied Physics, Part 1 42 ( 7A ) 4499 - 4500 2003年04月
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Influence of sputtering parameters on the formation process of single-oriented (002)Ti film on Si 査読有り
Kazuhiro MIREBA,Satoko SHINKAI,Katsutaka SASAKI,Hideto YANAGISAWA and Yoshio ABE
The Seventh International Symposium on Sputtering and Plasma Processes, Proceedings 451 - 454 2003年04月
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Realization of sequential epitaxial growth of Cu/HfN bilayered films on (111) and (001)Si 査読有り
Satoko SHINKAI,Katsutaka SASAKI,Hideto YANAGISAWA and Yoshio ABE
The Seventh International Symposium on Sputtering and Plasma Processes, Proceedings 459 - 462 2003年04月
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Epitaxial growth of high-quality α-Ta film on (001)Si substrate 査読有り
Masahiro KUDO,Satoko SHINKAI,Katsutaka SASAKI,Hideto YANAGISAWA and Yoshio ABE
The Seventh International Symposium on Sputtering and Plasma Processes, Proceedings 471 - 474 2003年04月
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Improvement of crystal orientation and surface roughness of sputtered Ru thin films 査読有り
Yoshio ABE,Satoko SHINKAI,Katsutaka SASAKI,Jiwang YAN and Kouki MAEKAWA
The Seventh International Symposium on Sputtering and Plasma Processes, Proceedings 191 - 194 2003年04月
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Electrical Properties of HfO2 Thin Insulating Film Prepared by Anodic Oxidation 査読有り
Hideto YANAGISAWA,Masahiro KAMIJYO,Satoko SHINKAI,Katsutaka SASAKI,Yoshio ABE and Misao YAMANE
Japanese Journal of Applied Physics, Part 1 41 ( 8 ) 5284 - 5287 2002年04月
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Lattice-matched HfN Buffer Layers for Epitaxy of GaN on Si 査読有り
R. Armitage,Qing Yang,H. Feick,J. Gebauer,E. R. Weber,Satoko Shinkai,Katsutaka Sasaki
Applied Physics Letter 87 ( 8 ) 1450 - 1452 2002年04月
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Realization of Cu (111) Single-Oriented State on SiO2 by Annealing Cu-Zr Film and the Thermal Stability of Cu-Zr/ZrN/Zr/Si Contact System 査読有り
Katsutaka SASAKI,Hidekazu MIYAKE,Satoko SHINKAI,Yoshio ABE and Hideto YANAGISAWA
Japanese Journal of Applied Physics, Part 1 40 ( 7 ) 4661 - 4665 2001年04月
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Preparation of a Contact System with a Single-Oriented (111)Al Overlayer by Interposing a Thin ZrN/Zr Bilayered Barrier Applicable to Sub-0.25-μm Design Rule 査読有り
Hidekazu MIYAKE,Hideto YANAGISAWA,Katsutaka SASAKI,Satoko SHINKAI,Yoshio ABE
Japanese Journal of Applied Physics, Part 1 40 ( 6A ) 4193 - 4194 2001年04月
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(111)Si上にエピタキシャル成長させた(111)HfN膜と(111)Cu/(111)HfN積層膜のAFM観察
新海聡子,佐々木克孝
電子情報通信学会, 技術研究報告 CPM 2001-43 19 - 24 2001年04月
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Application of HfN/Hf Bilayered Film as a Diffusion Barrier for Cu Metallization System of Si Large-Scale Integration 査読有り
Ken-ichi YOSHIMOTO,Satoko SHINKAI,Katsutaka SASAKI
Japanese Journal of Applied Physics, Part 1 39 ( 4A ) 1835 - 1839 2000年04月
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Sequential Single-Oriented Growth of (111)Cu/(111)HfN/(002)Hf Trilayered Film on (001)Si and its Thermal Stability 査読有り
Satoko SHINKAI,Ken-ichi YOSHIMOTO,Yasuhiro KITADA and Katsutaka SASAKI
Japanese Journal of Applied Physics, Part 1, Vol. 39, No. 10, pp. 5995-5999 (2000) 39 ( 10 ) 5995 - 5999 2000年04月
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Interfacial Solid-Phase Reaction in Al/HfN/Hf/Si Contact System during Postmetallization Annealing 査読有り
Satoko SHINKAI,Katsutaka SASAKI
Japanese Journal of Applied Physics, Part 1 39 ( 3A ) 1264 - 1267 2000年04月
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(111)Si上(111)Cu/(111)HfN２層膜の連続エピタキシャル成長と(111)HfN膜の拡散バリア特性
新海聡子,佐々木克孝
電子情報通信学会, 技術研究報告 CPM 2000-122 33 - 38 2000年04月
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薄いZrN/Zr２層膜を介在させたAl/ZrN/Zr/Siコンタクト系の熱的安定性
三宅秀和,柳沢英人,新海聡子,佐々木克孝,阿部良夫
電子情報通信学会, 技術研究報告 CPM 2000-83 79 - 83 2000年04月
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(001)Si上(111)Cu/(111)HfN/(002)Hf三層膜の連続単配向成長に及ぼすHf膜厚の影響
北田泰裕,新海聡子,柳沢英人,佐々木克孝,阿部良夫
電子情報通信学会, 技術研究報告 CPM 2000-82 73 - 78 2000年04月
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Influence of Sputtering Parameters on the Formation Process of High-Quality and Low-Resistivity HfN Thin Film 査読有り
Satoko SHINKAI,Katsutaka SASAKI
Japanese Journal of Applied Physics, Part 1 38 ( 4A ) 2097 - 2102 1999年04月
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Epitaxial Growth of HfN Film and Sequential Single-Oriented Growth of Al/HfN Bilayered Film on (001) and (111)Si 査読有り
Satoko SHINKAI,Katsutaka SASAKI
Japanese Journal of Applied Physics, Part 1, Vol. 38, No. 6A, pp. 3646-3650 (1999) 38 ( 6A ) 3646 - 3650 1999年04月
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Application of Al3Hf/Hf Bilayered Film as a Diffusion Barrier to Al Metallization System of Si Large-Scale Integration 査読有り
Satoko SHINKAI,Katsutaka SASAKI and Yoshio ABE
Japanese Journal of Applied Physics, Part 1 37 ( 11 ) 6146 - 6152 1998年04月
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Initial Silicide Formation Process of Single Oriented (002)Hf Film on Si and its Diffusion Barrier Property 査読有り
Satoko SHINKAI,Katsutaka SASAKI,Yoshio ABE and Hideto YANAGISAWA
Japanese Journal of Applied Physics, Part 1 37 ( 4A ) 2002 - 2006 1998年04月
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Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process 査読有り
Hideto YANAGISAWA,Katsutaka SASAKI,Yoshio ABE,Midori KAWAMURA,Satoko SHINKAI
Japanese Journal of Applied Physics, Part 1 37 ( 10 ) 5714 - 5718 1998年04月
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A Study on the Preparation Conditions of Single Oriented (002)Hf Film on n-(001)Si 査読有り
Satoko SHINKAI,Hideto YANAGISAWA,Katsutaka SASAKI and Yoshio ABE
Japanese Journal of Applied Physics, Part 1 37 ( 2 ) 643 - 648 1998年04月
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Alメタライゼーション系へのAl3Hf/Hf積層膜の拡散バリヤとしての適用
新海聡子,佐々木克孝,阿部良夫,柳沢英人
電子情報通信学会, 技術研究報告, SDM 97-184 49 - 55 1998年04月
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(001)Siと(111)Si上へのAl/HfN積層膜の連続単配向成長条件の検討
新海聡子,佐々木克孝
電子情報通信学会, 技術研究報告, CPM 98-118 35 - 40 1998年04月
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Al3Hf金属間化合物膜の結晶化過程と電気的特性 査読有り
新海聡子，柳沢英人，川村みどり，阿部良夫，佐々木克孝
電子情報通信学会論文誌(C-II) J80-C-II ( 9 ) 309 - 311 1997年04月
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n-(001)Si上への単配向Hf膜の作製条件の検討
新海聡子,柳沢英人,川村みどり,阿部良夫,佐々木克孝
電子情報通信学会, 技術研究報告 CPM 97-56 27 - 33 1997年04月