研究者詳細 - 新海　聡子

論文 - 新海　聡子

分割表示44 件中 1 - 20 件目／全件表示 >>

Study on electrical characterization of hexagonal-BN 査読有り

Yamanishi R., Motoda S., Shinkai S., Hasegawa M.

2022 IEEE CPMT Symposium Japan, ICSJ 2022 96 - 97 2022年01月

担当区分：責任著者記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

Hexagonal-BN (h-BN) based Silicon on Insulator(SOI) structure with Through Silicon Via (TSV) shows higher heat dissipation performance without degradation electrical characteristics compared with the conventional SOI structure. The electrical characteristics and the results are not clear. It is important to clarify the electrical characteristics of h-BN to implement 3D-power Supply on Chip(SoC). This paper investigates electrical characterization of h-BN.

DOI： 10.1109/ICSJ55786.2022.10034732

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85148684628&origin=inward

Loss Properties of Anodized Thin-Film Capacitors Fabricated Using Hf-Doped Nb Alloy Films 査読有り

Tomoharu Shibata, Hidefumi Kimizaki, Satoko Shinkai, Katsutaka Sasaki, Hideto Yanagisawa, Misao Yamane, and Yoshio Abe

Japanese Journal of Applied Physics 48 085504 2009年08月

Crystal Orientation of Epitaxial α-Ta(110) Thin Films Grown on Si(100) and Si(111) Substrates by Sputtering 査読有り

Masahiro Kudo, Satoko Shinkai, Hideto Yanagisawa, Katsutaka Sasaki, and Yoshio Abe

Japanese Journal of Applied Physics 47 5608 - 5612 2008年07月

Epitaxial Growth of (0001)Ru Thin Films on (111)ZrN/(111)Si by LowTemperature Process and Their Surface Morphologies 査読有り

Katsutaka Sasaki,Hideto Yanagisawa,Satoko Shinkai,Yoshio Abe,Junpei

Japanese Journal of Applied Physics 47 ( 3 ) 2008年03月

Preparation of Thin-Film Capacitor with High Reliability by Anodization of Zr-Al Alloy Film 査読有り

Naohiro Mikuni,Tomoharu Shibata,Satoko Shinkai,Katsutaka Sasaki,Hideto Yanagisawa,Misao Yamane,and Yoshio Abe

Japanese Journal of Applied Physics 46 ( 8A ) 5249 - 5253 2007年08月

Development of a compact angle-resolved secondary ion mass spectrometer for Ar+ sputtering 査読有り

S. Kawaguchi,M. Tanemura,M. Kudo,N. Handa,N. Kinoshita,L. Miao,S. Tanemura,Y. Gotoh,M. Liao,S. Shinkai

Vacuum 80 768 - 770 2006年04月

Angle Dependent Sputtering and Dimer Formation from Vanadium Nitride Target by Ar+ ion Bombaredment 査読有り

S. Kawaguchi,M. Kudo,M. Tanemura,L. Miao,S. Tanemura,Y. Gotoh,M. Liao,S. Shinkai

Adv. Mater. Res. 11-12 607 - 610 2006年04月

Preparation of Single-Oriented (111)VN Film with Low-Resistivity and Its Application as Diffusion Barrier between Cu and Si 査読有り

Ken-ichi YOSHIMOTO,Fumihiro KAIYA,Satoko SHINKAI,Katsutaka SASAKI,and Hideto YANAGISAWA

Japanese Journal of Applied Physics 45 ( 1A ) 215 - 220 2006年01月

Electrical Properties of a Thin Anodized Capacitor Made of Y-Doped Al Alloy Film 査読有り

Tomotake ONOZUKA,Hayato SASAKI,NaohiroMIKUNI,Satoko SHINKAI,Katsutaka SASAKI,Misao YAMANE

Japanese Journal of Applied Physics 44 ( 9A ) 6731 - 6735 2005年09月

Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer 査読有り

X. Xu,R. Armitage,Satoko Shinkai,Katsutaka Sasaki,C. Kisielowski and E. R. Weber

APPLIED PHYSICS LETTERS 86 182104 - 182104 2005年04月

Development of a compact angle-resolved secondary ion mass spectrometer 査読有り

Shinichi Kawaguchi,Masaki Tanemura,Masato Kudo,Nobumasa Handa,Naokazu Kinoshita,Lei Miao,Sakae Tanemura,Yasuhito Gotoh,Meiyong Liao,Satoko Shinkai

The Eighth International Symposium on Sputtering and Plasma Processes 2005年04月

Effects of Sputtering Parameters on the Formation of Single-Oriented (002) Ti Film on Si 査読有り

Kazuhiro MIREBA,Satoko SHINKAI,Hideto YANAGISAWA,Katsutaka SASAKI and Yoshio ABE

Japanese Journal of Applied Physics 44 ( 1A ) 358 - 376 2005年01月

Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process 査読有り

Hideto YANAGISAWA,Satoko SHINKAI,Katsutaka SASAKI,Yoshio ABE,Akira SAKAI

Japanese Journal of Applied Physics 44 ( 1A ) 343 - 349 2005年01月

Improvement of the Crystal Orientation and Surface Roughness of Ru Thin Films by Introducing Oxygen during Sputtering 査読有り

Yoshio ABE,Satoko SHINKAI,Katsutaka SASAKI,Jiwang YAN and Kouki MAEKAWA

Japanese Journal of Applied Physics, Part 1 43 ( 1 ) 277 - 280 2004年04月

Difference in Thermal Degradation Behavior of ZrO2 and HfO2 Anodized Capacitors 査読有り

Masahiro KAMIJYO,Tomotake ONOZUKA,Naoto YOSHIDA,Satoko SHINKAI,Katsutaka SASAKI,Misao YAMANE

Japanese Journal of Applied Physics 43 ( 9A ) 6217 - 6220 2004年04月

Realization of Sequential Epitaxial Growth of Cu/HfN Bilayered Films on (111) and (001)Si 査読有り

Satoko SHINKAI,Katsutaka SASAKI,Hideto YANAGISAWA and Yoshio ABE

Japanese Journal of Applied Physics, Part 1 42 ( 10 ) 6518 - 6522 2003年04月

Capacitor Property and Leakage Current Mechanism of ZrO2 Thin Dielectric Films Prepared by Anodic Oxidation 査読有り

Masahiro KAMIJYO,Tomotake ONOZUKA,Satoko SHINKAI,Katsutaka SASAKI,Misao YAMANE and Yoshio ABE

Japanese Journal of Applied Physics, Part 1 42 ( 7A ) 4399 - 4403 2003年04月

Epitaxial Ir Thin Film on (001)MgO Single Crystal Prepared by Sputtering 査読有り

Takeshi ISHIKAWA,Yoshio ABE,Satoko SHINKAI,Katsutaka SASAKI

Japanese Journal of Applied Physics, Part 1 42 ( 9A ) 5747 - 5748 2003年04月

Preparation of Low-Resistivity α-Ta Thin Films on (001)Si by Conventional DC Magnetron Sputtering 査読有り

Masayuki SHIOJIRI,Satoko SHINKAI,Katsutaka SASAKI,Hideto YANAGISAWA and Yoshio ABE

Japanese Journal of Applied Physics, Part 1 42 ( 7A ) 4499 - 4500 2003年04月

Influence of sputtering parameters on the formation process of single-oriented (002)Ti film on Si 査読有り

Kazuhiro MIREBA,Satoko SHINKAI,Katsutaka SASAKI,Hideto YANAGISAWA and Yoshio ABE

The Seventh International Symposium on Sputtering and Plasma Processes, Proceedings 451 - 454 2003年04月

　前のページ- 次のページ　

<新海 聡子>

論文 - 新海 聡子

<新海　聡子>

論文 - 新海　聡子