論文 - 新海 聡子
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Realization of sequential epitaxial growth of Cu/HfN bilayered films on (111) and (001)Si 査読有り
Satoko SHINKAI,Katsutaka SASAKI,Hideto YANAGISAWA and Yoshio ABE
The Seventh International Symposium on Sputtering and Plasma Processes, Proceedings 459 - 462 2003年04月
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Epitaxial growth of high-quality α-Ta film on (001)Si substrate 査読有り
Masahiro KUDO,Satoko SHINKAI,Katsutaka SASAKI,Hideto YANAGISAWA and Yoshio ABE
The Seventh International Symposium on Sputtering and Plasma Processes, Proceedings 471 - 474 2003年04月
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Improvement of crystal orientation and surface roughness of sputtered Ru thin films 査読有り
Yoshio ABE,Satoko SHINKAI,Katsutaka SASAKI,Jiwang YAN and Kouki MAEKAWA
The Seventh International Symposium on Sputtering and Plasma Processes, Proceedings 191 - 194 2003年04月
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Electrical Properties of HfO2 Thin Insulating Film Prepared by Anodic Oxidation 査読有り
Hideto YANAGISAWA,Masahiro KAMIJYO,Satoko SHINKAI,Katsutaka SASAKI,Yoshio ABE and Misao YAMANE
Japanese Journal of Applied Physics, Part 1 41 ( 8 ) 5284 - 5287 2002年04月
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Lattice-matched HfN Buffer Layers for Epitaxy of GaN on Si 査読有り
R. Armitage,Qing Yang,H. Feick,J. Gebauer,E. R. Weber,Satoko Shinkai,Katsutaka Sasaki
Applied Physics Letter 87 ( 8 ) 1450 - 1452 2002年04月
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Realization of Cu (111) Single-Oriented State on SiO2 by Annealing Cu-Zr Film and the Thermal Stability of Cu-Zr/ZrN/Zr/Si Contact System 査読有り
Katsutaka SASAKI,Hidekazu MIYAKE,Satoko SHINKAI,Yoshio ABE and Hideto YANAGISAWA
Japanese Journal of Applied Physics, Part 1 40 ( 7 ) 4661 - 4665 2001年04月
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Preparation of a Contact System with a Single-Oriented (111)Al Overlayer by Interposing a Thin ZrN/Zr Bilayered Barrier Applicable to Sub-0.25-μm Design Rule 査読有り
Hidekazu MIYAKE,Hideto YANAGISAWA,Katsutaka SASAKI,Satoko SHINKAI,Yoshio ABE
Japanese Journal of Applied Physics, Part 1 40 ( 6A ) 4193 - 4194 2001年04月
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(111)Si上にエピタキシャル成長させた(111)HfN膜と(111)Cu/(111)HfN積層膜のAFM観察
新海聡子,佐々木克孝
電子情報通信学会, 技術研究報告 CPM 2001-43 19 - 24 2001年04月
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Application of HfN/Hf Bilayered Film as a Diffusion Barrier for Cu Metallization System of Si Large-Scale Integration 査読有り
Ken-ichi YOSHIMOTO,Satoko SHINKAI,Katsutaka SASAKI
Japanese Journal of Applied Physics, Part 1 39 ( 4A ) 1835 - 1839 2000年04月
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Sequential Single-Oriented Growth of (111)Cu/(111)HfN/(002)Hf Trilayered Film on (001)Si and its Thermal Stability 査読有り
Satoko SHINKAI,Ken-ichi YOSHIMOTO,Yasuhiro KITADA and Katsutaka SASAKI
Japanese Journal of Applied Physics, Part 1, Vol. 39, No. 10, pp. 5995-5999 (2000) 39 ( 10 ) 5995 - 5999 2000年04月
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Interfacial Solid-Phase Reaction in Al/HfN/Hf/Si Contact System during Postmetallization Annealing 査読有り
Satoko SHINKAI,Katsutaka SASAKI
Japanese Journal of Applied Physics, Part 1 39 ( 3A ) 1264 - 1267 2000年04月
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(111)Si上(111)Cu/(111)HfN２層膜の連続エピタキシャル成長と(111)HfN膜の拡散バリア特性
新海聡子,佐々木克孝
電子情報通信学会, 技術研究報告 CPM 2000-122 33 - 38 2000年04月
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薄いZrN/Zr２層膜を介在させたAl/ZrN/Zr/Siコンタクト系の熱的安定性
三宅秀和,柳沢英人,新海聡子,佐々木克孝,阿部良夫
電子情報通信学会, 技術研究報告 CPM 2000-83 79 - 83 2000年04月
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(001)Si上(111)Cu/(111)HfN/(002)Hf三層膜の連続単配向成長に及ぼすHf膜厚の影響
北田泰裕,新海聡子,柳沢英人,佐々木克孝,阿部良夫
電子情報通信学会, 技術研究報告 CPM 2000-82 73 - 78 2000年04月
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Influence of Sputtering Parameters on the Formation Process of High-Quality and Low-Resistivity HfN Thin Film 査読有り
Satoko SHINKAI,Katsutaka SASAKI
Japanese Journal of Applied Physics, Part 1 38 ( 4A ) 2097 - 2102 1999年04月
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Epitaxial Growth of HfN Film and Sequential Single-Oriented Growth of Al/HfN Bilayered Film on (001) and (111)Si 査読有り
Satoko SHINKAI,Katsutaka SASAKI
Japanese Journal of Applied Physics, Part 1, Vol. 38, No. 6A, pp. 3646-3650 (1999) 38 ( 6A ) 3646 - 3650 1999年04月
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Application of Al3Hf/Hf Bilayered Film as a Diffusion Barrier to Al Metallization System of Si Large-Scale Integration 査読有り
Satoko SHINKAI,Katsutaka SASAKI and Yoshio ABE
Japanese Journal of Applied Physics, Part 1 37 ( 11 ) 6146 - 6152 1998年04月
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Initial Silicide Formation Process of Single Oriented (002)Hf Film on Si and its Diffusion Barrier Property 査読有り
Satoko SHINKAI,Katsutaka SASAKI,Yoshio ABE and Hideto YANAGISAWA
Japanese Journal of Applied Physics, Part 1 37 ( 4A ) 2002 - 2006 1998年04月
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Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process 査読有り
Hideto YANAGISAWA,Katsutaka SASAKI,Yoshio ABE,Midori KAWAMURA,Satoko SHINKAI
Japanese Journal of Applied Physics, Part 1 37 ( 10 ) 5714 - 5718 1998年04月
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A Study on the Preparation Conditions of Single Oriented (002)Hf Film on n-(001)Si 査読有り
Satoko SHINKAI,Hideto YANAGISAWA,Katsutaka SASAKI and Yoshio ABE
Japanese Journal of Applied Physics, Part 1 37 ( 2 ) 643 - 648 1998年04月