Language：English   Publishing type：Research paper (scientific journal)

<p>This study proposes a novel process called peeling of nano-particle (PNP) to remove material locally on a hard material surface, such as silicon carbide (SiC), diamond, and gallium nitride (GaN), using the magnetic nano-particles in an aqueous solution controlled by magnetic fields. By the concept of the PNP process, magnetic fields are generated by two solenoid coils, which are sandwiched between the hard material sample, to pull the magnetic nano-particles to adhere to and then peel the material from the sample surface. In this experiment, iron (II, III) oxide (Fe₃O₄) particles with a diameter size in the range of 50–100 nm were dispersed in water, and the pH value was adjusted to 10 by potassium hydroxide (KOH). The particles were magnetically controlled on the silicon carbide (4H-SiC) surface by the magnetic fields at approximately 17 mT. To confirm the contact phenomenon of the Fe₃O₄ particles on the 4H-SiC surface during the PNP process, an optical system was developed by applying evanescent field microscopy to limit the observation range to approximately 300 nm from the 4H-SiC surface. According to the experimental observed results, the control phenomenon of two examples of Fe₃O₄ particles could be observed through their scattering light, which relates to the magnetic field generating sequence wherein the particles were magnetically pulled in and out of the 4H-SiC surface in the limit range of the evanescent field. During the particle pull to the surface, particles were able to be tracked in the <i>X</i>–<i>Y</i> directions during the approach to the 4H-SiC surface. The Brownian motion ranges in all directions of the particles decreased when the particles approached close to the surface due to the pulling magnetic field. Moreover, the magnetic field enforced the magnetic moment of the particle and limited their rotation.</p>

DOI： 10.20965/ijat.2023.p0410

CiNii Research

Authorship：Corresponding author   Language：English   Publishing type：Research paper (other academic)

<p>By peeling of nano-particle (PNP) process, the magnetic nano-particles in an aqueous solution are employed to be locally magnetically controlled for adhering to a substrate surface and removing the material. In order to remove the material on the surface, the touching phenomenon of particle on surface needs to be confirmed. In this study, the touching phenomenon of nano-particle on the substrate surface was experimentally observed in situ the PNP process by our developed optical system applying multi-wavelength evanescent fields. The action forces, such as DLVO force and magnetic force, on the particle were measured by the height Z of the particle from the substrate surface. Fe₃O₄ particles with the sized range 50-100nm dispersed in the KOH solution (pH value of 10) were employed to be magnetically pulled to approach a silica glass surface by the controllable magnetic field generated by a solenoid coil. During the magnetic field generating, the height Z of nano-particle were measured at the closest approximately 10 nm, in which the DLVO force at measured height Z approximately 0.5-0.9 pN by calculation. To pull the particle touch on the glass surface, the pulling magnetic force on the particle size in range 50-100 nm should be higher than 1 pN approximately.</p>

DOI： 10.11522/pscjspe.2023s.0_384

CiNii Research

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2022s.0_126

CiNii Research

Authorship：Lead author,　Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

This report proposes a new method to three-dimensionally track each single nano-particle that has been interacting with a surface in nanoscale processing phenomena by using dual wavelength of evanescent field.

DOI： 10.11522/pscjspe.2016s.0_5

CiNii Article

CiNii Research

Language：Japanese   Publishing type：Research paper (other academic)

<p>SiC研磨における新規研磨微粒子の開発を行った。ナノシリカ微粒子上に水酸化フラーレンを吸着させた水酸化フラーレンハイブリッド型高速研磨技術について提案する。ここでは紫外線イオンによるポリマー化の影響についても検討している。</p>

DOI： 10.11522/pscjspe.2023s.0_788

CiNii Research

Language：Japanese   Publishing type：Research paper (other academic)

<p>本研究では、加振器による音波を用いてダイヤフラムとダイヤフラム上の研磨砥粒を振動させることにより、被加工物表面にダイヤフラム上の微細パターンを転写する新規音波加工技術を提案する。現在までに転写性を確認するため、絹パッドを貼付したダイヤフラムを加振させることで、Cuウェーハに絹パッドのパターンが転写することを確認した.</p>

DOI： 10.11522/pscjspe.2023s.0_794

CiNii Research

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2023s.0_400

CiNii Research

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2023s.0_422

CiNii Research

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2023s.0_424

CiNii Research

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2023s.0_374

CiNii Research

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

<p>Preventing the reattachment of nano-particles on the substrate surface is indispensable in the wafer cleaning process. In this paper, transportability of different sized nano-particles were observed, in the shear flow occurring near the surface region that duplicated cleaning process in lab-scale, by using the evanescent field. Sub-100 nm particles affected less flow effect and smaller inertia were less likely to be transported. In case of low speeds of inertial flow, most sub-100 nm particles still remain near the surface.</p>

DOI： 10.11522/pscjspe.2023s.0_786

CiNii Research

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

<p>We report the instantaneous physical evidence of detachment of residual φ80 nm Au particle due to the cavitation effect approaching during enforcing 1.1 MHz waves, which was clarified by using both of evanescent light field and dark field with duplicated the non-contact cleaning process of the surface to be cleaned.</p>

DOI： 10.1299/jsmekanto.2023.29.17d08

CiNii Research

Language：Japanese   Publishing type：Research paper (other academic)

<p>Flow rate control is essential for safety and time management in intravenous drip therapy. The main control method is to adjust the drop velocity. However, due to the influence of surfactants contained in some drugs, a drop may fall below the specified volume, and therefore, much effort and expense are required to improve the accuracy.In this paper, we report on the use of light to measure the volume of a droplet, and the successful miniaturization of a device and highly accurate flow rate measurement by devising an optical path. It is expected to contribute to the improvement of the performance of drip infusion systems.</p>

DOI： 10.11522/pscjspe.2022a.0_61

CiNii Research

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

DOI： 10.1149/10804.0017ecst

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Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

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Authorship：Lead author,　Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

<p>Cleaning phenomena in semiconductor manufacturing is about the nanoparticles being removed out from, or re-adhering to, or returning to the wafer surface. However, the residual nanoparticles from polishing slurry on the wafer are usually inspected only before and after cleaning process, not during wet cleaning process. Therefore, these cleaning phenomena mechanism on the surface have not already clearly known. We have been studying these phenomena by visualizing the nanoparticle motion on a surface in nanoscale wet cleaning process that are duplicated in lab-scale. This report focuses on the flow velocity distribution occurring on a surface that was obtained by duplicating the water flow in a micro fluid cell on a silica glass surface. We found that the flow, which is nearer than few micrometers from the surface being cleaned, has less shear flow velocity. Therefore, there should be some external force or energy, such as PVA brush or cavitation from ultrasonic, to remove residue particles in cleaning process.</p>

DOI： 10.1299/jsmekanto.2022.28.15h06

CiNii Research

Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.20965/ijat.2021.p0831

Scopus

CiNii Article

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Authorship：Corresponding author   Language：English   Publishing type：Research paper (other academic)

<p>The motion of nano-silica abrasive particle before attaching to the SiC surface being polished was analyzed numerically based on Brownian motion with DLVO theory, and then was compared with the results observed by evanescent light field localized on the SiC surface. We found that, when approximately 100 nm-sized silica particles are moving in close proximity within 100 nm from the SiC substrate surface, the nanoparticles would stay intermittently with slightly oscillating behavior before attaching to the surface.</p>

DOI： 10.11522/pscjspe.2021a.0_126

CiNii Research

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2021a.0_383

CiNii Research

Authorship：Corresponding author   Language：English   Publishing type：Research paper (other academic)

<p>The nanoscale polishing phenomena between substrate surface, 105 nm-sized SiO₂ particles slurry, and polishing pad during CMP process were experimentally observed and evaluated to identify the main factors which effectively polish a 4H-SiC substrate. The nanoscale polishing phenomena were observed in-situ by our developed compact apparatus applied an optical evanescent field. The observation is able to detect the scattering light from either the nano-abrasive particles or the pad asperities when they react to the surface to being polishing. The nanoparticle motion phenomena, which two conditions (i)only nanoparticles (without pad) and (ii)nanoparticles with pad sliding, on 4H-SiC substrate were observed. According to the observed results, the observed scattering light of nanoparticle on 4H-SiC was the ellipse shape compared with the observing on SiO₂ substrate. Furthermore, we could observe the particles moved nearer and then adhered on the surface. Less particle’s Brownian motion when the particle moved nearer to the surface. In case of nanoparticle with pad sliding, we could observe only the scattering light of pad sliding because the scattering light intensity of particle is quite lower than pad. Therefore, approached nanoparticle to 4H-SiC surface phenomena might be one possible role to explain higher polishing rate CMP parameter.</p>

DOI： 10.11522/pscjspe.2021a.0_102

CiNii Research

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

<p>In this study, the behavior of polishing particles was observed to clarify the material removal mechanism in CMP. A transparent pad with a low refractive index was fabricated by thermal imprinting using a transparent resin with the same refractive index as that of the slurry. In addition, we observed the behavior of the abrasive particles during polishing and discussed the relationship between the behavior of the abrasive particles and the step relaxation during polishing.</p>

DOI： 10.11522/pscjspe.2021a.0_110

CiNii Research

Authorship：Corresponding author   Language：English   Publishing type：Research paper (other academic)

<p>An abrasive nanoparticle behavior in chemical mechanical polishing (CMP) process is a three-dimensional (3D) motion near a substrate or reference surface. The height position is a longitudinal distance between the reference surface and nanoparticle, which is a challenge for measuring the height position in a wet condition. Our previous report could estimate the relative height of polystyrene 100 nm particles by applying multi-wavelength evanescent fields, but the absolute height was not confirmed yet. Therefore, in this report, we proposed a design concept for absolute height verification by using the developed nano-step height patterns. The nano-step height was approximately less than hundred nanometers from the reference surface. The nano-step height made from an optical resin that has a refractive index close to water to decrease the scattering light during observing nanoparticles in water. Polystyrene 100 nm particles on the nano-step height were used to estimate the absolute height of nanoparticle. The proposed concept could be used to verify the nanoparticle's absolute height in water, which can be applied to clarify the nanoparticle phenomena during the CMP process in the near future.</p>

DOI： 10.11522/pscjspe.2021a.0_588

CiNii Research

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2021a.0_113

CiNii Research

Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.1557/s43578-020-00067-4

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Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (scientific journal)

<p>本稿では、近接場光を応用した工具刃先計測手法の確立のための援用シミュレーションの高精度化を目的とし、Drude-Lorentzモデルの導入を試みた．これにより従来のDrudeモデルのみを用いたものと比較し，波長により変化する反射率を考慮した解析が可能となった．また，更なる改善のために解析時のセルサイズによる影響を調査した．最後に工具刃先計測の散乱光シミュレーションを行い，得られた光散乱光特性を報告する．</p>

DOI： 10.11522/pscjspe.2021S.0_635

CiNii Article

CiNii Research

Other Link： https://ci.nii.ac.jp/naid/130008084162

Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.20965/ijat.2021.p0503

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130008062468

Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.20965/IJAT.2021.P0234

Scopus

CiNii Article

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Authorship：Lead author   Language：Japanese   Publishing type：Research paper (other academic)

<p>Cleaning phenomena in semiconductor manufacturing is about the nanoparticles being removed out from, or re-adhering to, or returning to the wafer surface. However, these residual nanoparticles from polishing slurry on the wafer are usually inspected before-and-after cleaning process, not during the wet cleaning process. Accordingly, these cleaning phenomena mechanism on the surface have already not clearly known. Therefore, we have been establishing dynamically visualization of wet cleaning phenomena on the surface applying localized light called evanescent light that is generated by an optically internal reflection. This report introduces some of observed physical characteristical phenomena during duplicated scrub cleaning process of 10 and 30 nm gold particles by PVA brushes without and with skin layer, which have different contact area ratio on the surface being cleaned.</p>

DOI： 10.1299/jsmekanto.2021.27.10A02

CiNii Article

CiNii Research

Other Link： https://ci.nii.ac.jp/naid/130008091970

Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.1149/2162-8777/ac1c55

Scopus

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Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

<p>Chemical-Mechanical Polishing (CMP) process has emerged as the method of choice for planarization in the semiconductor industry. The interaction force between the surface being polished and the abrasive nanoparticles plays a significant role in flattening the substrate surface in the CMP process. For example, when the SiO₂ nanoparticle is distant from the SiC substrate surface, the interaction force between the surface and the nanoparticles is presented. This force could be analysed using Derjaguin and Landau and Verwey and Overbeek (DLVO) theory and particle Brownian motion. According to the simulation results, we found that very fine abrasive nanoparticle such as smaller than approximately 10 nm is comparatively approach to the surface being polished more certainly.</p>

DOI： 10.1299/jsmelem.2021.10.178-171

CiNii Research

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2021S.0_314

CiNii Article

CiNii Research

Other Link： https://ci.nii.ac.jp/naid/130008083994

Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

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Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

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Language：English   Publishing type：Research paper (international conference proceedings)

<p>This study used a water-soluble inclusion complex, fullerene/β-cyclodextrins(C₆₀/β-CDs), as additive abrasive with conventional SiO₂ slurry for the chemical mechanical polishing/planarization(CMP) of the silicon carbide substrate wafer. The hydrodynamic size(<i>d_H</i>) of C₆₀/β-CDs suspension was measured by the dynamic light scattering(DLS) method; the appearance of a C₆₀/β-CDs inclusion complex is observed by TEM. The C₆₀/β-CDs hybrid SiO₂-based slurry performed a higher removal rate than conventional SiO₂ slurry, and the polished surface showed a lower depression and roughness, too.</p>

DOI： 10.1299/jsmelem.2021.10.094-114

CiNii Research

Language：English   Publishing type：Research paper (international conference proceedings)

DOI： 10.1115/lemp2020-8553

CiNii Research

Other Link： http://asmedigitalcollection.asme.org/lemp/proceedings-pdf/doi/10.1115/LEMP2020-8553/6619658/v001t03a009-lemp2020-8553.pdf

Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.1088/1361-6501/ab87ec

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Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.35848/1347-4065/ab8c9b

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Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.1557/jmr.2020.6

Scopus

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Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2020S.0_486

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130007896718

Authorship：Corresponding author   Language：English   Publishing type：Research paper (other academic)

<p>The nanoscale polishing phenomena between the substrate surface and polishing pad during process, such as CMP process, were observed and evaluated, in this report. The concept of observation method is applied the generated evanescent field to limit the observable region only on the surface being polished, and the detectable scattering light from the nanoparticles and polishing pad when they move close to the surface in a range of evanescent field. The detected scattering light intensity could be used for evaluating the phenomena. According to the observed results, there should have been more than two different phenomena in polishing; the particles adhering on the polishing pad, and the individual movement particles during moving. However, the phenomena being able to perform polishing, could not clearly identify yet.</p>

DOI： 10.11522/pscjspe.2020S.0_658

CiNii Article

CiNii Research

Other Link： https://ci.nii.ac.jp/naid/130007896847

Authorship：Corresponding author   Language：English   Publishing type：Research paper (other academic)

<p>This paper reports development of an optical apparatus for Real-time observation during chemical reactions in Nano-scale process on surface such as CMP (Chemical-Mechanical polishing) and catalysis by applying in evanescent field. Beside using evanescent field to observe Nano-particles in physical aspects, the developed Raman spectroscopy apparatus aims to observe chemical aspects during reactions on processing surface. Changes in Raman scattering spectrum is expected to understand chemical reactions on the processing surface. In this report, the 532 nm wavelength laser source will be used to generate evanescent field. A rotation stage of diffraction grating and a translation stage will used to optimize the Raman spectrum data.</p>

DOI： 10.11522/pscjspe.2020S.0_622

CiNii Article

CiNii Research

Other Link： https://ci.nii.ac.jp/naid/130007896772

Authorship：Corresponding author   Language：English   Publishing type：Research paper (other academic)

<p>The nanoscale phenomena, such as chemical mechanical polishing (CMP) process, present near the surface. A three-dimensional nanoparticle tracking could explain the phenomena that happen in the polishing process. From our previous report, we have investigated the three-dimensional motion of an individual standard nanoparticle by using optical method, but the height Z on the third dimension was not accurately verified. In this report, the sub-100 nm individual nanoparticles were fixed on the tip which the tip was connected to the piezo actuator for controlling the height Z displacement. The multi-wavelength evanescent fields with optical microscopy system is also applied in the experiment for three-dimensional nanoparticle tracking. The scattering light from nanoparticle will exponentially increase when the nanoparticle on the tip was downward moved close to the reference surface. Finally, The height Z uncertainty could be measured approximately ±25 nm and the penetration height measurability were 200 nm far from the reference surface. We could three-dimensionally track the individual standard nanoparticle in recording speed higher than 50 frames per second for exposure time less than 10 milliseconds.</p>

DOI： 10.11522/pscjspe.2020S.0_588

CiNii Article

CiNii Research

Other Link： https://ci.nii.ac.jp/naid/130007896683

Authorship：Lead author   Language：Japanese   Publishing type：Research paper (other academic)

<p>Cleaning phenomena in semiconductor manufacturing is about the nano-contamination being repelled out from, or adhering to, the wafer surface. However, residual contamination on the wafer has been usually inspected only before and after cleaning process, not during wet cleaning process. Therefore, these cleaning phenomena mechanism on the surface have not already clearly known. We have been establishing dynamically visualization of wet cleaning phenomena on the surface applying localized light called evanescent light generated by internal reflection. This article introduces some of observed physical phenomena during duplicated cleaning process in both contact cleaning by a PVA brush and non-contact cleaning by mega-sonic wave.</p>

DOI： 10.1299/jsmekanto.2020.17E02

CiNii Article

CiNii Research

Other Link： https://ci.nii.ac.jp/naid/130007994424

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2020S.0_660

CiNii Article

CiNii Research

Other Link： https://ci.nii.ac.jp/naid/130007896839

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

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Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.1557/jmr.2020.246

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DOI： 10.1109/ICEAST.2019.8802533

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DOI： 10.1109/ESIT.2018.8665198

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Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2019s.0_138

CiNii Article

CiNii Research

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2019s.0_904

CiNii Article

CiNii Research

Authorship：Corresponding author   Language：English   Publishing type：Research paper (other academic)

<p>The nanoparticle is popularly used for chemical mechanical polishing process (CMP) in semiconductor industry. There are many unknown phenomena in nanoparticles moving during polishing process. Therefore, we have been studying the phenomena by using optical method on 3D position tracking of nanoparticle in real-time measurement. In this report, the gold 50 nm standard particles would be observed to determine the 3D motion tracking of individual nanoparticle. According to our previous studies, the single wavelength of evanescent light field is hard to determine the 3D spatial position of each nanoparticle. Thus, the multi-wavelength of scattering light is applied in the experiment. The scattering light will occur when the particle moving near to the reference surface. Finally, the 3D position tracking results of standard nanoparticle will be investigated and discussed by the exponential relationships between the detected scattering light and the measured depth Z values.</p>

DOI： 10.11522/pscjspe.2019s.0_459

CiNii Article

CiNii Research

Language：English   Publishing type：Research paper (scientific journal)

The manufacturing process of the transparent pad was developed by the thermal imprint method equipped with a special jig for controlling the thickness, pattern and electrode structure. Particle behavior is controlled by the electric field using a wire mesh inserted into a low index transparent polishing pad. As a result, the movement of hybrid particles of diamond particles and silica particles can be observed in an electric field using a digital microscope. Furthermore, in the polishing experiment, it was possible to obtain a higher amount of material removal in the presence of the electric field than in the absence of the electric field.

DOI： 10.1299/jsmemmt.2019.13.D39

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130007836392

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In recent years, superconductive assisted machining method (SUAM) using a magnetic levitation tool utilizing a superconducting phenomenon such as pinning effect has been developed to reduce tool interference on the conventinal procceing method. Measurement of the force by the magnetic levitation tool is evauated in the air to determind polishing conditions. In our study, polishing test were performed not only on aluminum plate but also stainless steel plate using fixed and loose abrasives. As a result, the superconductive assisted machining method was applicable to stainless steel material.

DOI： 10.1299/jsmemmt.2019.13.D38

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130007836391

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<p>病院などで使用されている点滴装置は，流量を一定に保つために正確な流量測定が必要である．特に，抗がん剤などの副作用がある薬液を使用する場合には，より正確性が求められている．現在使用されている点滴測定装置は，液滴の濃度が高いと精度が悪化するというデメリットがあるため，液滴の種類によらず測定できる測定手法が求められている．本研究では，画像処理を使用した体積推定により，液滴の体積を測ることを目的とした．</p>

DOI： 10.11522/pscjspe.2019A.0_476

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130007800991

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

<p>The study on removal mechanism of nanoparticles near to polished wafer surface is necessary to efficiently clean the nano-particles from the wafer in semiconductor manufacturing process. An optical method has been applied to visualize only the nano-particles moving near to a surface by an evanescent field. We generated the evanescent field locating in limited range from the film surfaces by reflecting a laser beam at an incident angle larger than critical angle. The removal phenomena of the SiO₂ particles (105 nm) on the BK7 glass surfaces were observed by our developed experimental setup. The SiO₂ particles removal with ultrasonic (approx. 1 MHz) was demonstrated.</p>

DOI： 10.1299/jsmekanto.2019.25.18A02

CiNii Article

CiNii Research

Other Link： https://ci.nii.ac.jp/naid/130007712645

Authorship：Corresponding author   Language：English   Publishing type：Research paper (other academic)

<p>In this paper, the performance evaluation of developed in-situ apparatus for real-time observation were studied. The apparatus could observe the nanoparticles phenomena on surface between substrate and polishing pad that is essential to improve the Material Removal Rate (MRR) of the substrate during Chemical Mechanical Polishing (CMP) process. We propose the single wavelength by applying an evanescent field in order to observe the nanoparticles phenomena. The experimental condition were separated into two experiments, as different size (sub 10 nm and 105 nm) silica slurry ( 5 wt% with pH 10.5) with pure water (pH 10.5). According to the experimental result, the our apparatus could detect the scattering light intensity of pure water and silica slurry during polishing process. The silica slurry are higher scattering light intensity than pure water, and sub 10 nm silica slurry is highest intensity.</p>

DOI： 10.1299/jsmekyushu.2019.72.A42

CiNii Article

CiNii Research

Other Link： https://ci.nii.ac.jp/naid/130007801889

Language：English   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2019A.0_18

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130007800812

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

DOI： 10.1149/09202.0191ecst

Scopus

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Authorship：Lead author   Language：Japanese   Publishing type：Research paper (other academic)

In surface fabrication process, such as the polishing in semiconductor substrate, there are many nano-particles moving on or nearby the surface to be polished. We have been establishing an optical method to observe and to track the 3-dimensional position of each dynamical moving nano-particle on time by applying an evanescent light field. In this report, the scattering light characteristic from a moving nano-particle in an evanescent field generated by internal reflection on a silica glass surface was analysed by FDTD (Finite Difference Time Domain) method on MATLAB. We discuss the scattering light from a particle moving perpendicularly to a surface in an interval time as one recorded frame in practical observation.

DOI： 10.1299/jsmemmt.2019.13.D18

CiNii Article

CiNii Research

Other Link： https://ci.nii.ac.jp/naid/130007836425

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2018a.0_295

CiNii Article

CiNii Research

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

<p>We repot on the hybrid fine particles using core silica particles adsorbed on the ultra fine nano particles such as nano silica particles (ca.4nm diameter) and fullerenol for Chemical Mechanical Polishing of Hard to process materials. In our study, chemical reactivity and mechanical action from the hybrid particles were investigated using the several diameters of the core silica particles. At the case of adsorption of the nano silica particles and fullerenol, chemical reactivity become dominant parameter under the small size region although the nano particle is coated on the surface of the core silica particles. These results expect that both parameters as chemical reactivity and mechanical action can be control by the sizes of core particles and coating condition of the nano silica particles. We also optimize the structure of the hybrid silica particles at the case of the nano silica particles and/or fullerenol to meet the high performance CMP of hard to process materials and discuss about these results.</p>

DOI： 10.11522/pscjspe.2018a.0_312

CiNii Article

CiNii Research

Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.57.07MD03

Scopus

CiNii Article

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Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

Italy   Venice  

Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.1299/jsmelem.2017.9.173

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130006744679

Language：Japanese   Publishing type：Research paper (other academic)

We have developed a polishing pad using materials with different wear rates to achieve highly efficient polishing of difficult-to-process material substrates. Nylon fibers with good mechanical properties are arranged with other materials, followed by dressing to form protrusions on the polishing pad surface. Stable polishing performance can be expected if the orientation and arrangement of the nylon fibers can be controlled. A sapphire substrate was polished using the prototype polishing pad developed in this research. The results indicated 30% improvement in material removal rate compared to the ready-made pad.

DOI： 10.11420/jsat.62.264

CiNii Research

Language：English   Publishing type：Research paper (other academic)

<p>Chemical mechanical planarization is one of the crucial steps for the manufacturing process of semiconductor. CMP process with good adaptability can lead to high productivity, low defect, and coping with the ever-changing materials. In CMP process, slurry plays a big role in material removal. Among the composition of slurry, the abrasive predominates in the removal rate and surface quality. Therefore, this study develops the application of water-soluble nanoparticles, such as fullerene, as abrasives for the copper CMP process. By electroosmotic phenomenon, a kind of electro kinetic force, it generates the micro-flow field for abrasive during CMP process. The increasing disturbance of flow enhances the uniformity of abrasive distribution and polishing efficiency. The electrode embedded polishing platen which causes the electroosmotic flow on polishing pad is revealed and simulated by multi-physics fields coupling software, COMSOL Multiphysics. Finally, comparing with the results of simulation and flow visualization with fluorescent powders, the optimal and reasonable design is discussed.</p>

DOI： 10.11522/pscjspe.2018s.0_781

CiNii Article

CiNii Research

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2018s.0_873

CiNii Article

CiNii Research

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2018s.0_129

CiNii Article

CiNii Research

Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85054532311&origin=inward

Language：Japanese   Publishing type：Research paper (scientific journal)

DOI： 10.11420/jsat.62.219

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130007492417

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.1299/jsmekyushu.2018.71.f36

CiNii Article

CiNii Research

Other Link： https://www.jstage.jst.go.jp/article/jsmekyushu/2018.71/0/2018.71_F36/_pdf

Language：Japanese   Publishing type：Research paper (other academic)

Fabrication process of the pad has been developed by imprint method with special zig to control of the thickness and patter and electrode structure. Movement of the fine particle is controlled by electrical field using copper wire electrode inserted in the low refractive index – transparency polishing pad. As results, we can be observe the movement of the diamond particle between the pattern structures under the pad by electrical field using digital microscope.

DOI： 10.1299/jsmemmt.2018.12.d06

CiNii Article

CiNii Research

Other Link： https://www.jstage.jst.go.jp/article/jsmemmt/2018.12/0/2018.12_D06/_pdf

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

<p>The study on adhesion and desorption mechanism of nanoparticles near to polished wafer surface is necessary to efficiently clean the nano-particles from the wafer in semiconductor manufacturing process. This report proposes an optical method to visualize only the nano-particles moving near to Si₃N₄ and SiO₂ film surfaces by applying an evanescent field. We generated the evanescent field locating in limited range from the film surfaces by reflecting a laser beam at an incident angle larger than critical angle. Adhesion and desorption phenomena of the polystyrene latex standard particles (50±1 nm) and the SiO₂ particles (55 nm) moving near to the Si₃N₄ and SiO₂ film surfaces were observed by our developed experimental setup. Furthermore, desorption phenomenon of SiO₂ particles (105 nm) with the flow occurred by polyvinyl alcohol (PVA) sponge brush sliding was also demonstrated.</p>

DOI： 10.1299/jsmekanto.2018.24.os0105

CiNii Article

CiNii Research

Other Link： https://www.jstage.jst.go.jp/article/jsmekanto/2018.24/0/2018.24_OS0105/_pdf

Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85041279621&origin=inward

Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.56.07KB01

Scopus

CiNii Article

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85026266521&origin=inward

Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.7567/JJAP.56.07KH02

Scopus

CiNii Article

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85026222432&origin=inward

Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.20965/ijat.2017.p0736

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85028565760&origin=inward

Authorship：Lead author,　Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

<p>Non-contact tool setter for rotating micro tools has been needed because the position of tool tip during rotation is different from the position when the tool is not rotating. Furthermore, precision of tool position measurement is definitely required in nanoscale due to the miniaturization of micro rotating tool size down to smaller than 50<i>μ</i>m. An evanescent light field is applied to detect a micro tool tip position in nanoscale without contacting between micro tool and detector. In this report, micro tools with diameter of <i>φ</i> 50<i>μ</i>m were approached to and/or departed from a glass reference plane surface by a nano-controled piezo actuator to verify our detection method. Consequently, the tool tips were detected in the evanescent field during 300 nm range from the reference surface, implying that the tool tip can be detected in the precision of less than ±150 nm by only observing the scattering light from the evanescent light field without contacting.</p>

DOI： 10.1299/jsmemecj.2017.s1330103

CiNii Article

CiNii Research

Other Link： https://www.jstage.jst.go.jp/article/jsmemecj/2017/0/2017_S1330103/_pdf

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2017a.0_765

CiNii Article

CiNii Research

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.1299/jsmekyushu.2017.70.907

CiNii Article

CiNii Research

Other Link： https://www.jstage.jst.go.jp/article/jsmekyushu/2017.70/0/2017.70_907/_pdf

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

水と同等の屈折率を有する透明な樹脂パッドを用いて、スラリー中の微粒子観察やシリコン酸化膜の膜測など、CMPにおけるモニタリング技術に関する研究を行っている。今回は低屈折率の透明樹脂パッドを用いたモニタリング技術のコンセプトと、その足がかりとなる実験データについて報告する。

DOI： 10.11522/pscjspe.2017s.0_523

CiNii Article

CiNii Research

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (other academic)

ナノスケールにおける加工現象として，ナノ粒子を用いたポリシング加工がある．本研究は，ポリシング加工のナノ粒子の挙動を観察し，ナノ粒子による加工現象を解明することを目的とする．そこで本研究では，表面上近傍に局在するエバネッセント光を用いた実時間観測を行っている．既知のナノ単粒子に多波長エバネッセント光を当て，その散乱光の強度を調べたので，ここに報告する．

DOI： 10.11522/pscjspe.2017a.0_985

CiNii Article

CiNii Research

Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84964413075&origin=inward

Language：English   Publishing type：Research paper (other academic)

DOI： 10.1299/jsmekyushu.2016.69.361

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110010054803

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

<p>Transparency micro-patterned pad is used to observe fine particles by an epi-illumination microscope. The material of transparency micro-patterned pad is resin which has almost same as the refractive index of water. Therefore, it has characteristic that the micro pattern could disappear in the observation image by filling water. Epi-illumination microscope has illumination system and the detection system on the same side. In this study, we succeeded to observe the diamond particles with a diameter of 1μm on the glass substrate at 1000 frame/s in dark-field illumination. This results show that the fine particles could be observed simplicity, and also suggest the possibility that the fine particles observation on opaque substrate using the epi-illumination microscope.</p>

DOI： 10.1299/jsmemecj.2016.s1330203

CiNii Article

CiNii Research

Other Link： https://www.jstage.jst.go.jp/article/jsmemecj/2016/0/2016_S1330203/_pdf

Language：Japanese   Publishing type：Research paper (other academic)

本研究では超電導現象である磁気浮上を利用し、金型や3Dプリンタなどの中空部品成形技術が抱える問題を解消する新規中空加工技術の確立を目指している。その概要としては、磁気浮上を利用して磁性体や超伝導体を一定間隔離して浮上させトラップし、さらに回転運動を加え回転工具とすることで被加工物を切削する技術である。本報では樹脂などを用いて本加工技術の原理検証を行ったので、その内容について報告する。

DOI： 10.11522/pscjspe.2016s.0_971

CiNii Article

CiNii Research

Authorship：Last author   Language：Japanese   Publishing type：Research paper (other academic)

CMPでは，複数の加工材料に対して最適なスラリーやポリシングパッドを適用させる必要がある．これらの部材を最適化するためには，材料除去メカニズムに基づき，スラリー中微粒子の種類や微粒子径，材質，薬液を選定することが重要である．そこで本研究では，サファイア，SiO2などの複数の基板に対して動的光散乱法（DLS）を用いて微粒子径の変化について評価したので報告する．

DOI： 10.11522/pscjspe.2016s.0_371

CiNii Article

CiNii Research

Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84974624277&origin=inward

Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84974530730&origin=inward

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

日本   Kyoto   2015.10.18  -  2015.10.22

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

Korea   Seoul   2015.09.16  -  2015.09.18

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

日本   神戸   2014.11.19  -  2014.11.21

DOI： 10.1109/ICPT.2014.7017281

Scopus

Other Link： http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6996093

Language：English   Publishing type：Research paper (international conference proceedings)

DOI： 10.1299/jsmelem.2015.8._2108-1_

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110010045337

Language：English   Publishing type：Research paper (international conference proceedings)

DOI： 10.1299/jsmelem.2015.8._1516-1_

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110010045303

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

USA   Boston, Massachusetts   2014.11.09  -  2014.11.14

Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

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Authorship：Corresponding author   Language：Japanese   Publishing type：Article, review, commentary, editorial, etc. (other)

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

USA   Lake Placid, New York   2013.08.11  -  2013.08.14

Language：English   Publishing type：Research paper (international conference proceedings)

France   Grenoble   2012.10.15  -  2012.10.17

Other Link： http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6353748

Authorship：Corresponding author   Language：Japanese   Publishing type：Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)

Authorship：Corresponding author   Language：Japanese   Publishing type：Research paper (scientific journal)

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

Sweden   Stockholm  

Language：English   Publishing type：Research paper (scientific journal)

Scopus

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Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)

Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84911437924&origin=inward

Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84923259312&origin=inward

Language：English   Publishing type：Research paper (international conference proceedings)

2011.11.09  -  2011.11.11

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

Language：English   Publishing type：Research paper (international conference proceedings)

Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.1143/JJAP.50.05EC03

Scopus

CiNii Article

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Language：English   Publishing type：Research paper (scientific journal)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84862924625&origin=inward

Language：English   Publishing type：Research paper (scientific journal)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84862909298&origin=inward

Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)

Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)

Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79957668547&origin=inward

Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84871556243&origin=inward

Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79957654218&origin=inward

Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84871584472&origin=inward

Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)

Language：English   Publishing type：Research paper (international conference proceedings)

2010.11  -  2010.11

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

2010.11  -  2010.11

Language：English   Publishing type：Research paper (international conference proceedings)

2010.11  -  2010.11

Language：English   Publishing type：Research paper (international conference proceedings)

2010.10  -  2010.10

Language：English   Publishing type：Research paper (international conference proceedings)

2010.10  -  2010.10

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

2010.09  -  2010.09

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

2010.09  -  2010.09

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

2009.11.11  -  2009.11.13

Language：English   Publishing type：Research paper (international conference proceedings)

2009.11.11  -  2009.11.13

Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)

2009.11  -  2009.11

Language：English   Publishing type：Research paper (scientific journal)

2009.11  -  2009.11

Language：English   Publishing type：Research paper (scientific journal)

2009.11  -  2009.11

Language：English   Publishing type：Research paper (scientific journal)

2009.11  -  2009.11

Language：English   Publishing type：Research paper (scientific journal)

2009.11  -  2009.11

Language：Japanese   Publishing type：Research paper (scientific journal)

主要雑誌

Language：Japanese   Publishing type：Research paper (scientific journal)

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/10025103361

Language：Japanese   Publishing type：Research paper (scientific journal)

In liquid crystal display panel production, the silica glass photo mask in the photolithography process is becoming larger, and planarity improvement of the silica glass photo mask is required. Planarization of the mask surface requires polishing. However, the polishing of large-sized silica glass involves nonuniform slurry flow under the glass. In this study, we visualized the slurry flow in polishing of a square of silica glass to realize uniform slurry flow. Furthermore, we visualized the slurry flow with various grooved polishing pads and examined the slurry flow between the silica glass and pad surface.

DOI： 10.11420/jsat.53.578

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130004494500

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2009A.0.305.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130004659081

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2009S.0.1015.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130005029419

Language：Japanese   Publishing type：Research paper (other academic)

近年の工業製品の高度機能化に伴い，工作機械による加工精度のみならず，加工工具そのものの小型化及び高精度化，さらには機上での工具管理が重要な課題となっている．本研究では，レーザの回折現象を用いた非接触かつ高精度な工具測定方法及び小型で機上に搭載できる装置の研究開発を行っている．本稿では，波長の異なる2つのレーザ光を用い，2個の同時測定データから工具位置測定のさらなる高精度化を試みたので報告する．

DOI： 10.11522/pscjspe.2009S.0.815.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130005029877

Language：Japanese   Publishing type：Research paper (other academic)

The material removal phenomenon in CMP process is not clarified yet. Therefore, the appropriate material removal model has not established. In this study, the interaction among wafer surface, polishing pad surface and fine particles in slurry was observed and material removal mechanism was investigated. In this report. the property of SiO_2 film in alkalinity solution was investigated with AFM indentation. In pH8.5 solution. SiO_2 film in KOH solution is softer than SiO_2 film in NH_4OH. In pH10 solution, a property of SiO_2 film in KOH solution is quite simillar to a property of SiO, film in NH_4OH solution. This fact suggests that in pH10 solution SiO_2 film changes soft film, the a chemical reaction layer in KOH solution is the same as a chemical layer solution in NH_4OH.

DOI： 10.1299/jsmekanto.2009.15.461

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007722430

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2009S.0.1041.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130005029433

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2009S.0.1021.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130005029422

Authorship：Lead author   Language：Japanese   Publishing type：Research paper (other academic)

In these days, ultra precision, high complexity and high efficiency of fine-fabrication using cutting tool are required. Not only performance of machine tool but also downsizing of high accurate working tool itself has been an important issue to realize the requirements. In this study, on-machine tool measurement technology using laser diffraction which is able to manage micro tool and able to post in the machine tool has been establishing. In this article, the on-machine tool measurement device applying dual wavelength is developed. We use the developed tool measurement device, installable size for machining center, to evaluate fundamental measurement performance.

DOI： 10.1299/jsmemecjo.2009.4.0_273

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007861922

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2009S.0.1027.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130005029425

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.1299/jsmekyushu.2009.62.247

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110008011368

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.1299/jsmekyushu.2009.62.245

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110008011367

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.1299/jsmekyushu.2009.62.243

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110008011366

Language：English   Publishing type：Research paper (scientific journal)

Taiwan   2008.11.10  -  2008.11.12

Authorship：Lead author   Language：Japanese   Publishing type：Article, review, commentary, editorial, etc. (scientific journal)

DOI： 10.2493/jjspe.74.810

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/10021814486

Authorship：Corresponding author   Language：Japanese   Publishing type：Article, review, commentary, editorial, etc. (scientific journal)

Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)

Switzerland   2008.05.18  -  2008.05.22

Language：Japanese   Publishing type：Research paper (other academic)

This study is focused on the material removal mechanism in chemical mechanical polishing (CMP) process. The material removal phenomena in CMP process has not been clarified yet. In this study, the interaction among wafer surface, polishing pad surface and fine particles in slurry was observed with AFM and material removal mechanism was investigated. Especially in this paper, we researched about the interaction between the oxide wafer surface and fine particles. The property of SiO2 film in solution and adhesive removal phenomena with a fine particle were investigated with AFM indentation. We propose novel materials removal model based on these experiments.

DOI： 10.11522/pscjspe.2008A.0.851.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130004658870

Authorship：Lead author   Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2008A.0.835.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130004658861

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2008S.0.201.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130005028966

Language：Japanese   Publishing type：Research paper (other academic)

The material removal phenomenon in CMP process is not clarified yet. Therefore, the appropriate material removal model has not established. In this study, the interaction among wafer surface, polishing pad surface and fine particles in slurry was observed and material removal mechanism was investigated. At first, the property of SiO_2 film in solution was investigated with AFM indentation. Next, the AFM tip after indentation was observed with SEM-EDX system. In pH7〜pH 10 solution, SiO_2 film changed to soft material, and small adherent which was SiO_2 was observed in pH7 solution. This fact suggests that fine particles in slurry adhere materials from SiO_2 film with chemical adherent force.

DOI： 10.1299/jsmekanto.2008.14.409

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007705394

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2008S.0.183.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130005028956

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2008A.0.839.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130004658863

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.1299/jsmekyushu.2008.61.349

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007709365

Authorship：Lead author   Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84908222613&origin=inward

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2008A.0.843.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130004658865

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.1299/jsmekyushu.2008.61.355

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007709388

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.1299/jsmekyushu.2008.61.353

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007709387

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.1299/jsmekyushu.2008.61.351

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007709386

Language：English   Publishing type：Research paper (scientific journal)

DOI： 10.1007/1-84628-559-3_47

Language：English   Publishing type：Research paper (international conference proceedings)

Other Link： http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5760397

Authorship：Corresponding author   Language：Japanese   Publishing type：Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)

Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)

Language：English   Publishing type：Research paper (scientific journal)

ドイツ   2007.04  -  2007.04

Authorship：Lead author   Language：Japanese   Publishing type：Research paper (other academic)

According to advanced functionality in a wide variety of equipments in these days, ultra precision, high complexity and high efficiency of fine-fabrications are required. Not only performance of machining center but also downsizing of cutting tool and the on-machine tool measurement have been an important issue to realize these fabrications. In this article, on-machine tool measurement technique using laser diffraction, which is applicable for on-machine measurement has been establishing and developing. The developed on-machine measurement device dimension is 150 mm&times;200 mm&times;135 mm, installable into machining center. Next, tool measuring experiments are carried out in order to evaluate tool-measurement performance of the developed device. Experimental results imply the measurement uncertainty(2&sigma;) is less than 100 nm and the tool tip displacement error is less than 200 nm. Hence, it is considered that the measurement precision of the developed on-machine device is sufficient for tool measurement inside the next generation of machining center.

DOI： 10.11522/pscjspe.2007S.0.305.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130005028443

Language：Japanese   Publishing type：Research paper (other academic)

The material removal mechanism on Chemical Mechanical Polishing is not clarified yet. Accordingly, it is difficult to build up a systematic CMP process simulation system. In order to develop CMP process simulation system, it is necessary to establish "material removal model" among wafer surface, polishing pad surface and fine particles in slurry. In the study, we are proposing material removal model for SiO_2 layer. Chemical adsorption between fine particles and wafer and between fine particles and polishing pad is an important factor for the material removal mechanism.

DOI： 10.1299/jsmekanto.2007.13.237

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007083467

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.1299/jsmekyushu.2007.60.295

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007112970

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.1299/jsmekyushu.2007.60.301

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007113054

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.1299/jsmekyushu.2007.60.299

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007112972

Language：Japanese   Publishing type：Research paper (other academic)

CMPにおいてポリシングパッド-ウェハ聞のスラリーの迅速な供給・排出およびポリシングパッド-ウェハ間のスラリーの流量分布が研磨特性に重大な影響を与える.ポリシングパッド-ウェハ間のスラリーフローの制御を行うため,ポリシングパッド上に形成する溝パターンの適切な設計方法が重要となる.本報告では同心円状溝パターン,放射状溝パターンの溝寸法を変化させて,ポリシングパッド-石英ガラス問のスラリーフロー可視化実験を行い,パッド溝パターン設計法の指針について考察した.

DOI： 10.1299/jsmekyushu.2007.60.297

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007112971

Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33947218913&origin=inward

Language：English   Publishing type：Research paper (other academic)

USA   2006.10.12  -  2006.10.13

Language：English   Publishing type：Research paper (international conference proceedings)

2006.09.25  -  2006.09.27

Language：English   Publishing type：Research paper (international conference proceedings)

2006.09.16  -  2006.09.18

Language：Japanese   Publishing type：Research paper (scientific journal)

主要雑誌 代表的研究業績

Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)

The extremely precise level of cutting work's demand has been increasing, recently. Therefore, the establishment of a supreme measurement technology for micro endmills during operating on ultra-precision machining center plays an important role in many micro fabrication industries. The &ldquo;Diffraction Gauge Method&rdquo;, a novel measuring technique based on far-field laser diffraction, has been proposed to measure cutting-edge profiles of micro tools (&phi;<500&mu;m) with repeatability of better than 100 nm even though on-machine surroundings. In this paper, cutting-edge profile measurement of worn micro endmills (&phi;300&mu;m), which operated side-milling on graphite work material, is carried out. Agreement of the measured profiles with SEM image confirms the high accuracy of the measurement technique. Subsequently, the tool wear evaluations in various cutting lengths of micro endmills before and after cutting notify the relationship between increase in tool wears and cutting length. These experimental results verify the validity of our novel micro endmill measurement technique, which can be applied into ultra-precision machining center in the near future.

DOI： 10.1299/kikaic.72.1730

Scopus

CiNii Article

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33748329393&origin=inward

Language：English   Publishing type：Research paper (international conference proceedings)

タイ   Bangkok   2006.05.10  -  2006.05.12

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2006S.0.523.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130005027458

Authorship：Lead author   Language：Japanese   Publishing type：Research paper (other academic)

Recently, much more micro&ndash;shaped milling work, such as die/mold and parts machining, with supreme precision has been required. Therefore, establishment of the high precision measurement technology for tool cutting&ndash;edge profile during operation is indispensable. The aim of our study is to develop a measurement technique, which is based on the far&ndash;field laser diffraction, in order to evaluate cutting&ndash;edge profiles of micro endmill as sub&ndash;micrometer precision. In addition, the technique is applicable for on&ndash;machine measurement due to simplicity and long working distance of the optical system. In this article, the measurements of poly&ndash;crystalline diamond (PCD) micro endmill diameters are curried out. The measured results show the validity of measurement method and the measurement repeatability.

DOI： 10.11522/pscjspe.2006S.0.1103.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130005027134

Language：Japanese   Publishing type：Research paper (other academic)

The material removal mechanism of Chemical Mechanical Polishing has a lot of unidentified aspects which are not yet clarified. Moreover, it is very difficult to build up the systematic simulation system on the mechanism. It is indispensable to model the contact mechanism among abrasive particles, surface of wafer and surface of polishing pad in order to construct a simulation system in CMP. However, the conventional modeling of polishing pad surface is not appropriate for the simulation. In this research, by observing the surface of the polishing pad, a model of the polishing pad surface was proposed. Further, the relationship was considered between the surface structure of polishing pad and material removal mechanism.

DOI： 10.1299/jsmekanto.2006.12.25

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110006638491

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2006S.0.537.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130005027466

Authorship：Lead author   Language：Japanese   Publishing type：Research paper (other academic)

According to advanced functionality in a wide variety of equipments in these days, ultra precision, high complexity and high efficiency of fine-fabrication is required. Not only performance of machine tool but also downsizing of high accurate working tool itself has been an important issue to realize above conditions. In this study, on-machine tool measurement technology using laser diffraction which is able to manage micro tool and able to post in the machine tool has been establishing. In this article, the on-machine tool measurement device is developed. The developed on-machine device is carried out a response measurement experiment of hundreds nano-displacement using piezo stage then the fundamental characteristics of the developed measurement device is verified.

DOI： 10.1299/jsmemmt.2006.6.131

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110006638933

Language：Japanese   Publishing type：Research paper (other academic)

DOI： 10.11522/pscjspe.2006S.0.559.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130005027478

Authorship：Lead author   Language：English   Publishing type：Research paper (international conference proceedings)

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84883704912&origin=inward

Language：English   Publishing type：Research paper (scientific journal)

日本   Nagoya   2005.10.19  -  2005.10.22

Language：Japanese   Publishing type：Research paper (other academic)

The aim of this study is to develop a new measuring technique bsed on laser diffraction such as Fraunhofer diffraction theory which is called the diffraction gauge method. This method makes it possible to evaluate a three-dimensional cutting-edge profile of a micro-endmill with precision of better than 100nm even though on-machine measurement. The measurement resolution was experimentally achived to be 15nm for a helical endmill and repeatability of ±50nm with valid accuracy for new tool. In this paper, in order to verify that the diffraction gauge method is of practical use such as on-machine measurement, the three-dimensional cutting edge profile measurements of a worn tool with the diameter of 0.3mm, which has performed side milling on graphite with 40000 rpm rotational speed, is discussed. The experimantal results show that the diffraction gauge method has enough high performance to be able to evaluate wear quantity of a worn micro endmill.

DOI： 10.1299/jsmemecjo.2005.4.0_85

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110006190914

Language：Japanese   Publishing type：Research paper (other academic)

SiC ceramics have broad application area due to its high temperarture strength, high heat conductivity and chemical stability. Recently, not only sintered but single crystal SiC are developed and it is expected the application for glass lens mold die material and semicondictor base plate. For the applications, it is required to develop important technology for obtaining defect free surfaces and reasonable cost for finishing. CMP process, as forming chemical reaction layer on material surface and remove, is considered to fulfill the requirements. In the report, polishing in high temperature is tried on SiC polishing to achieve the requirements.

DOI： 10.11522/pscjspe.2005A.0.335.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130004656915

Language：Japanese   Publishing type：Research paper (scientific journal)

Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)

A new optical measuring method of cutting edge profiles with a few nanometerresolutions for micro milling tool is proposed. The edge profile is scaled by the width between the first order maxima in a diffraction pattern, which relates to the spacing of a slit-type aperture formed between a reference knife-edge and a tool cutting-edge. The technique is applicable for on-machine measurement due to simplicity and long working distance of the optical system. In this paper, first, the theoretical analysis reveals the measurement resolution, and then the proposal of laser diffraction gauge method is mentioned. Next, the calibratability and the practicability of our technique are affirmed with fundamental experiments. Furthermore, experimental verifications are carried out for commercial tools such as straight-flute and helical-flute of micro endmills. Subsequently, excellent agreement of the profiles, which are measured with our developed experimental systems, with an image from scanning ion microscope verifies that the proposed method is efficient to accurately measure cutting-edge profiles.

DOI： 10.1299/kikaic.70.3556

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=15544383092&origin=inward

Language：Japanese   Publishing type：Research paper (scientific journal)

Language：English   Publishing type：Research paper (international conference proceedings)

日本   Niigata   2003.11  -  2003.11

Language：English   Publishing type：Research paper (international conference proceedings)

Germany   2003.05  -  2003.05

Language：Japanese   Publishing type：Research paper (scientific journal)

代表的研究業績

Event date： 2019.01   Language：Japanese  

CiNii Article

Event date： 2019.01   Language：English  

<p>The nanoparticle is popularly used for chemical mechanical polishing process (CMP) in semiconductor industry. There are many unknown phenomena in nanoparticles moving during polishing process. Therefore, we have been studying the phenomena by using optical method on 3D position tracking of nanoparticle in real-time measurement. In this report, the gold 50 nm standard particles would be observed to determine the 3D motion tracking of individual nanoparticle. According to our previous studies, the single wavelength of evanescent light field is hard to determine the 3D spatial position of each nanoparticle. Thus, the multi-wavelength of scattering light is applied in the experiment. The scattering light will occur when the particle moving near to the reference surface. Finally, the 3D position tracking results of standard nanoparticle will be investigated and discussed by the exponential relationships between the detected scattering light and the measured depth Z values.</p>

CiNii Article

Event date： 2019.01   Language：Japanese  

CiNii Article

Event date： 2018.01   Language：Japanese  

CiNii Article

Event date： 2018.01   Language：Japanese  

CiNii Article

Event date： 2018.01   Language：Japanese  

CiNii Article

Event date： 2018.01   Language：Japanese  

CiNii Article

Event date： 2018.01   Language：Japanese  

CiNii Article

Event date： 2018.01   Language：Japanese  

CiNii Article

Event date： 2018.01   Language：Japanese  

CiNii Article

Event date： 2018.01   Language：English  

<p>Chemical mechanical planarization is one of the crucial steps for the manufacturing process of semiconductor. CMP process with good adaptability can lead to high productivity, low defect, and coping with the ever-changing materials. In CMP process, slurry plays a big role in material removal. Among the composition of slurry, the abrasive predominates in the removal rate and surface quality. Therefore, this study develops the application of water-soluble nanoparticles, such as fullerene, as abrasives for the copper CMP process. By electroosmotic phenomenon, a kind of electro kinetic force, it generates the micro-flow field for abrasive during CMP process. The increasing disturbance of flow enhances the uniformity of abrasive distribution and polishing efficiency. The electrode embedded polishing platen which causes the electroosmotic flow on polishing pad is revealed and simulated by multi-physics fields coupling software, COMSOL Multiphysics. Finally, comparing with the results of simulation and flow visualization with fluorescent powders, the optimal and reasonable design is discussed.</p>

CiNii Article

Event date： 2018.01   Language：Japanese  

CiNii Article

Event date： 2018.01   Language：Japanese  

CiNii Article

Event date： 2017.01   Language：Japanese  

ナノスケールにおける加工現象として，ナノ粒子を用いたポリシング加工がある．本研究は，ポリシング加工のナノ粒子の挙動を観察し，ナノ粒子による加工現象を解明することを目的とする．そこで本研究では，表面上近傍に局在するエバネッセント光を用いた実時間観測を行っている．既知のナノ単粒子に多波長エバネッセント光を当て，その散乱光の強度を調べたので，ここに報告する．

CiNii Article

Event date： 2017.01   Language：Japanese  

CiNii Article

Event date： 2017.01   Language：Japanese  

CiNii Article

Event date： 2017.01   Language：Japanese  

水と同等の屈折率を有する透明な樹脂パッドを用いて、スラリー中の微粒子観察やシリコン酸化膜の膜測など、CMPにおけるモニタリング技術に関する研究を行っている。今回は低屈折率の透明樹脂パッドを用いたモニタリング技術のコンセプトと、その足がかりとなる実験データについて報告する。

CiNii Article

Event date： 2016.01   Language：Japanese  

CiNii Article

Event date： 2016.01   Language：Japanese  

CMPでは，複数の加工材料に対して最適なスラリーやポリシングパッドを適用させる必要がある．これらの部材を最適化するためには，材料除去メカニズムに基づき，スラリー中微粒子の種類や微粒子径，材質，薬液を選定することが重要である．そこで本研究では，サファイア，SiO2などの複数の基板に対して動的光散乱法（DLS）を用いて微粒子径の変化について評価したので報告する．

CiNii Article

Event date： 2016.01   Language：Japanese  

CiNii Article

Event date： 2016.01   Language：Japanese  

本研究では超電導現象である磁気浮上を利用し、金型や3Dプリンタなどの中空部品成形技術が抱える問題を解消する新規中空加工技術の確立を目指している。その概要としては、磁気浮上を利用して磁性体や超伝導体を一定間隔離して浮上させトラップし、さらに回転運動を加え回転工具とすることで被加工物を切削する技術である。本報では樹脂などを用いて本加工技術の原理検証を行ったので、その内容について報告する。

CiNii Article

Event date： 2015.05.20 - 2015.05.22   Language：English  

Event date： 2015.03.20   Language：Japanese  

CiNii Article

Event date： 2015.01   Language：Japanese  

CiNii Article

Event date： 2015.01   Language：Japanese  

CiNii Article

Event date： 2015.01   Language：Japanese  

CiNii Article

Event date： 2015.01   Language：Japanese  

CiNii Article

Event date： 2015.01   Language：Japanese  

CiNii Article

Event date： 2015.01   Language：Japanese  

CiNii Article

Event date： 2015.01   Language：Japanese  

CiNii Article

Event date： 2014.08.10 - 2014.08.13   Language：English  

Event date： 2014.01   Language：Japanese  

CiNii Article

Event date： 2014.01   Language：Japanese  

CiNii Article

Event date： 2014.01   Language：Japanese  

CiNii Article

Event date： 2014.01   Language：Japanese  

CiNii Article

Event date： 2013.10.14 - 2013.10.15   Language：English  

Event date： 2013.01   Language：Japanese  

CiNii Article

Event date： 2013.01   Language：Japanese  

CiNii Article

Event date： 2013.01   Language：Japanese  

サファイアCMPプロセスは，耐薬品性，耐摩耗性に優れておりポリシングレートが低いため，長時間必要となる．これまでサファイア基板のポリシング高効率化としては，シリカスラリーに水酸化フラーレンを混合する手法が報告されている．しかしながら,ここでは加工条件について最適化されていない．そこで本研究では，ポリシングパッドの最適化により表面粗さの改善と高効率研磨を試みたので報告する.

CiNii Article

Event date： 2013.01   Language：Japanese  

CiNii Article

Event date： 2013.01   Language：English  

In this study, a novel Variable Rotation Polishing method would be proposed in order to increase the unsteady slurry flow in CMP process for increasing the polishing efficiency and for flowing slurry into the center of wafer sufficiently when the wafer becomes larger and also in case of saving the slurry. We developed a control unit to control platen variable rotation speed and rotation direction and rotation angle. This paper investigates the efficiency of variable rotation in CMP process. Consequently, material removals of all conditions in case of Variable Rotation Polishing were higher than only forward rotation.

CiNii Article

Event date： 2013.01   Language：Japanese  

CiNii Article

Event date： 2013.01   Language：Japanese  

CiNii Article

Event date： 2013.01   Language：Japanese  

CiNii Article

Event date： 2012.03   Language：Japanese  

Event date： 2012.01   Language：Japanese  

CiNii Article

Event date： 2012.01   Language：Japanese  

CiNii Article

Event date： 2012.01   Language：Japanese  

CiNii Article

Event date： 2012.01   Language：Japanese  

CiNii Article

Event date： 2012.01   Language：Japanese  

CiNii Article

Event date： 2012.01   Language：Japanese  

CMPプロセスではポリシングの進行に伴いポリシングパッド表面が劣化し加工性能が低下することが問題視されている．しかしポリシングパッドの表面形状は複雑かつ微細な凹凸が混在しているため有効な表面形状の評価法は確立されていない．そこで我々はポリシングパッド表面形状評価法として，光学的フーリエ変換に基づいた手法を提案している．本報告では撮像素子を大型化して測定空間波長領域を拡大したので、実験的に検証を行った．

CiNii Article

Event date： 2012.01   Language：Japanese  

CiNii Article

Event date： 2012.01   Language：Japanese  

CMPで使用されているポリシングパッドの表面形状は，研磨能力を決定する重要な要素である．そこで，ポリシングパッド表面上に任意の形状とパターンを形成したマイクロパターンパッドを製作し，研磨実験を行うことで研磨性能との関係性を明らかにする．その結果をもとに，より研磨性能の優れたマイクロパターンパッドの開発を行う．本稿では研磨に適用可能なサイズのマイクロパターンパッドを製作したので報告する．

CiNii Article

Event date： 2012.01   Language：Japanese  

現在CMPは、プレストンの経験則に従って研磨条件を設定している。CMPにおけるポリシング界面には、ウェハ‐ポリシングパッド間の摩擦、ウェハ面下のスラリー流れ、被研磨面に発生する熱など未解明な現象が多く存在している。これら現象を体系的に解析し、研磨条件を最適化する必要がある。そこで本研究では、ポリシング界面の摩擦およびスラリー流れの現象解析を行ったので報告する。

CiNii Article

Event date： 2012.01   Language：Japanese  

CiNii Article

Event date： 2012.01   Language：Japanese  

CiNii Article

Event date： 2012.01   Language：English  

CiNii Article

Event date： 2012.01   Language：Japanese  

CiNii Article

Event date： 2012.01   Language：Japanese  

CiNii Article

Event date： 2011.11   Language：English  

Event date： 2011.11   Language：English  

Event date： 2011.11   Language：English  

Event date： 2011.11   Language：English  

Event date： 2011.11   Language：English  

Event date： 2011.11   Language：English  

Event date： 2011.11   Language：English  

Event date： 2011.11   Language：English  

Event date： 2011.09   Language：Japanese  

Event date： 2011.09   Language：Japanese  

Event date： 2011.09   Language：Japanese  

Event date： 2011.09   Language：Japanese  

Event date： 2011.09   Language：Japanese  

Event date： 2011.08   Language：English  

Event date： 2011.03   Language：Japanese  

Event date： 2011.03   Language：Japanese  

Event date： 2011.01   Language：Japanese  

CiNii Article

Event date： 2011.01   Language：Japanese  

CiNii Article

Event date： 2011.01   Language：Japanese  

CiNii Article

Event date： 2011.01   Language：Japanese  

CiNii Article

Event date： 2011.01   Language：Japanese  

CiNii Article

Event date： 2011.01   Language：Japanese  

CiNii Article

Event date： 2011.01   Language：Japanese  

CMP技術に使用されるポリシングパッドの表面形状はコンディショニングによりランダムで複雑であり，その表面形状が研磨に及ぼす影響は未だ解明されていない．そこでマイクロメートルオーダーの表面形状を設計したポリシングパッドを製作し，研磨を行うことで最適な表面形状を追求する．本研究では設計した表面形状を研磨中より長く保つ必要がある．そこで本報告ではPEEK材を用い，耐摩耗性の向上を図る．

CiNii Article

Event date： 2011.01   Language：Japanese  

CiNii Article

Event date： 2011.01   Language：Japanese  

CiNii Article

Event date： 2011.01   Language：Japanese  

CiNii Article

Event date： 2010.10   Language：Japanese  

Event date： 2010.10   Language：Japanese  

Event date： 2010.09   Language：Japanese  

Event date： 2010.09   Language：Japanese  

Event date： 2010.08   Language：English  

Event date： 2010.01   Language：Japanese  

CiNii Article

Event date： 2010.01   Language：Japanese  

CiNii Article

Event date： 2010.01   Language：Japanese  

CiNii Article

Event date： 2010.01   Language：Japanese  

CiNii Article

Event date： 2010.01   Language：Japanese  

CiNii Article

Event date： 2010.01   Language：Japanese  

CiNii Article

Event date： 2010.01   Language：Japanese  

CiNii Article

Event date： 2009.11   Language：English  

Event date： 2009.11   Language：English  

Event date： 2009.11   Language：English  

Event date： 2009.11   Language：English  

Event date： 2007.12   Language：Japanese  

Event date： 2007.12   Language：Japanese  

Event date： 2007.03.20 - 2007.03.22   Language：Japanese  

Event date： 2007.03.16 - 2007.03.17   Language：Japanese  

Event date： 2007.03.16   Language：Japanese  

Event date： 2007.03.16   Language：Japanese  

Event date： 2007.03.16   Language：Japanese  

Event date： 2007.03.16   Language：Japanese  

Event date： 2006.12   Language：Japanese  

Event date： 2006.12   Language：Japanese  

Event date： 2006.12   Language：Japanese  

Event date： 2006.12   Language：Japanese  

Event date： 2006.12   Language：Japanese  

Event date： 2006.12   Language：Japanese  

Event date： 2006.11.24   Language：Japanese  

Event date： 2006.09.13 - 2006.09.16   Language：Japanese  

Event date： 2006.03.10 - 2006.03.11   Language：Japanese  

Event date： 2006.03   Language：Japanese  

Event date： 2006.03   Language：Japanese  

Event date： 2006.03   Language：Japanese  

Event date： 2006.03   Language：Japanese  

Event date： 2005.11   Language：Japanese  

Event date： 2005.11   Language：Japanese  

Event date： 2005.11   Language：Japanese  

Event date： 2005.11   Language：Japanese  

Event date： 2005.09.19 - 2005.09.22   Language：Japanese  

Event date： 2005.09   Language：Japanese  

Event date： 2004.11   Language：Japanese  

Event date： 2004.04   Language：Japanese  

Event date： 2004.03   Language：Japanese  

Event date： 2003.03   Language：Japanese  

Event date： 2002.11.21 - 2002.11.22   Language：Japanese  

Event date： 2002.03   Language：Japanese  

Event date： 2001.11.21 - 2001.11.22   Language：Japanese  

Application no：2013-139863  Date applied：2013.07.03

Application no：2013-49684  Date applied：2013.03.12

Application no：2013-49685  Date applied：2013.03.12

Application no：2012-147422  Date applied：2012.06.29

Application no：2012-147442  Date applied：2012.06.29

Application no：2011-188471  Date applied：2011.08.31

Application no：2011-117617  Date applied：2011.05.26