Papers - IZUMI Akira
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Heavy phosphorus doping of diamond by hot-filament chemical vapor deposition Reviewed International journal
Katamune Y., Izumi A., Ichikawa K., Koizumi S.
Diamond and Related Materials 134 2023.04
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n-Type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation Reviewed
Katamune Y., Mori D., Arikawa D., Izumi A., Shimaoka T., Ichikawa K., Koizumi S.
Applied Physics A: Materials Science and Processing 126 ( 11 ) 2020.11
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Control of the chemical composition of silicon carbon nitride films formed from hexamethyldisilazane in H<inf>2</inf>/NH<inf>3</inf> mixed gas atmospheres by hot-wire chemical vapor deposition Reviewed
Katamune Y., Mori H., Morishita F., Izumi A.
Thin Solid Films 695 2020.02
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Formation of phosphorus-incorporated diamond films by hot-filament chemical vapor deposition using organic phosphorus solutions Reviewed
Katamune Y., Arikawa D., Mori D., Izumi A.
Thin Solid Films 677 28 - 32 2019.05
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Low-temperature silicon oxidation using oxidizing radicals produced by catalytic decomposition of H Reviewed
Katamune Y., Negi T., Tahara S., Fukushima K., Izumi A.
Japanese Journal of Applied Physics 57 ( 12 ) 2018.10
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Growth of single-crystalline diamond by hot filament CVD using organic phosphorus solution
Katamune Yuki, Arikawa Daisuke, Mori Daichi, Izumi Akira
JSAP Annual Meetings Extended Abstracts ( The Japan Society of Applied Physics ) 2018.2 ( 0 ) 1352 - 1352 2018.09
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Growth of diamond thin films on SiCN underlayers by hot filament chemical vapor deposition Reviewed
635 53 - 57 2017.08
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Evaluation of friction coefficient and adhesion properties of silicon carbon nitride films prepared by HWCVD Reviewed
131 ( 3 ) 463 - 466 2017.03
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Study of low-temperature oxidation of silicon and OH radical generation by heated catalyzer
Negi Takanobu, Katamune Yuki, Izumi Akira
Abstract of annual meeting of the Surface Science of Japan 36 ( 0 ) 2016.01
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A 12GHz band low noise block for satellite receiver development with 0.18μm CMOS Process Reviewed
134 ( 11 ) 1656 - 1663 2014.11
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A 12GHz Band Low Noise Block for Satellite Receiver Development with 0.18µm CMOS Process Reviewed
Miyashita Kiyoshi, Izumi Akira
IEEJ Transactions on Electronics, Information and Systems ( The Institute of Electrical Engineers of Japan ) 134 ( 11 ) 1656 - 1663 2014.01
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Evaluation of friction-coefficient of silicon carbon nitride films by HWCVD method Reviewed
Yamada Tomohiro, Kawashima Shingo, Nakagami Masatoshi, Kadotani Yutaka, Izumi Akira
Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2012 ( 0 ) 313 - 314 2012.01
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Surface Cleaning for Metals using Atomic Hydrogen Generated by Heated Catalyzer Invited Reviewed
IZUMI Akira
Hyomen Kagaku ( The Surface Science Society of Japan ) 31 ( 4 ) 196 - 201 2010.04
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Improvement in flip-chip bonding by reduction of oxides using hydrogen radicals Reviewed
Nakashima T., Miyamoto K., Sato M., Nogita K., Izumi A.
Proceedings - 2009 International Symposium on Microelectronics, IMAPS 2009 1028 - 1031 2009.12
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Crystallization of D <inf>2</inf> O thin films on Ru(0 0 1) surfaces Reviewed
Yamauchi T., Mine K., Nakashima Y., Izumi A., Namiki A.
Applied Surface Science 256 ( 4 ) 1124 - 1127 2009.11
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Novel materials for electronic device fabrication using ink-jet printing technology Reviewed
Kumashiro Y., Nakako H., Inada M., Yamamoto K., Izumi A., Ishihara M.
Applied Surface Science 256 ( 4 ) 1019 - 1022 2009.11
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A novel copper interconnection cleaning by atomic hydrogen using diluted hydrogen gas Reviewed
K. Abe,A. Izumi
Solid state Phenomena 145-146 389 - 392 2009.04
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Novel materials for electronic devaice fabrication using ink-jet printing technology Reviewed
Y. Kumashiro,H. Nakako,M. Inada,K. Yamamoto,A. Izumi
Applied Surface Science 256 1019 - 1022 2009.04
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Estimation of hydrogen radical density generated from various kinds of catalysts Reviewed
K. Abe,M. Ida,A. Izumi,S. Terashima,T. Sudo,Y. Watanabe,Y. Fukuda
Thin Solid Films 517 3449 - 3451 2009.04
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Improvement of Flip-chip Bonding by reduction of oxide using hydrogen radical Reviewed
Nakashima Tsuyoshi, Miyamoto Koji, Sato Mitchihiro, Nogita Kanta, Izumi Akira
Proceedings of JIEP Annual Meeting ( The Japan Institute of Electronics Packaging ) 23 ( 0 ) 54 - 55 2009.01
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Carbon contamination of EUV mask: Film characterization, impact on lithographic performance, and cleaning Reviewed
Nishiyama Y., Anazawa T., Oizumi H., Nishiyama I., Suga O., Abe K., Kagata S., Izumi A.
Proceedings of SPIE - The International Society for Optical Engineering 6921 2008.12
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Evaluation of corrosion resistance of SiCN films deposited by HWCVD using organic liquid materials Reviewed
T.Nakayamada,K.Matsuo,Y.Hayashi,A.Izumi,Y.Kadotani
Thin Solid Films 516 656 - 658 2008.04
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Reduction of oxide layer on various metal surfaces by atomic hydrogen Reviewed
A.Izumi,T.Ueno,Y.Miyazaki,H.Oizumi,I.Nishiyama
Thin Solid Films 516 853 - 855 2008.04
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Cleaning technology for EUV multilayer mirror using atomic hydrogen generated with hot wire Reviewed
K.Motai,H.Oizumi,S.Miyagaki,I.Nishiyama,A.Izumi,T.Ueno,A.Namiki
Thin Solid Films 516 839 - 843 2008.04
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Reduction of oxide layer on various metal surfaces by atomic hydrogen treatment Reviewed
Izumi A., Ueno T., Miyazaki Y., Oizumi H., Nishiyama I.
Thin Solid Films 516 ( 5 ) 853 - 855 2008.01
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Formation of highly transparent SiCN films prepared by HWCVD Reviewed
Izumi A., Nakayamada T.
CIMTEC 2008 - Proceedings of the 3rd International Conference on Smart Materials, Structures and Systems - Smart Materials and Micro/Nanosystems 54 223 - 226 2008.01
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A novel surface cleaning for copper interconnection using ammonium decomposed species generated by hot wire Reviewed
Izumi A., Ueno T.
Solid State Phenomena 134 307 - 310 2008.01
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Atomic hydrogen cleaning of Ru-capped EUV multilayer mirror Reviewed
Motai K., Oizumi H., Miyagaki S., Nishiyama I., Izumi A., Ueno T., Miyazaki Y., Namiki A.
Proceedings of SPIE - The International Society for Optical Engineering 6517 ( PART 1 ) 2007.10
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Atomic hydrogen cleaning of surface Ru oxide formed by extreme ultraviolet irradiation of Ru-capped multilayer mirrors in H2O ambience Reviewed
Oizumi H., Izumi A., Motai K., Nishiyama I., Namiki A.
Japanese Journal of Applied Physics, Part 2: Letters 46 ( 25-28 ) 2007.07
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Oxidation and reduction of thin Ru films by gas plasma Reviewed
Y. Iwasaki,A. Izumi,H. Tsurumaki,A. Namiki,H. Oizumi,I. Nishiyama
Applied Surface Science 253 8699 - 8704 2007.04
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H<inf>2</inf> dilution effect in the Cat-CVD processes of the SiH <inf>4</inf>/NH<inf>3</inf> system Reviewed
Ansari S., Umemoto H., Morimoto T., Yoneyama K., Izumi A., Masuda A., Matsumura H.
Thin Solid Films 501 ( 1-2 ) 31 - 34 2006.04
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H2 dilution effect in the Cat-CVD processes of the SiH4/NH3 system Reviewed
S.G. Ansari,Hironobu Umemoto,Takashi Morimoto,Koji Yoneyama,Akira Izumi,Atushi Masuda,Hideki Matsumura
Thin Solid Films 510 31 - 34 2006.04
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Ultra thin silicon nitride prepared by direct nitridation using ammonia decomposed species Reviewed
Thin Solid Films 501 157 - 159 2006.04
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Deposition of SiCN films using organic liquid materials by HWCVD method Reviewed
Akira Izumi,Koshi Oda
Thin Solid Films 510 195 - 197 2006.04
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Reduction of oxide layer on Ru surface by atomic-hydrogen treatment Reviewed
I.. Nishiyama,H. Oizumi,K. Motai,A. Izumi,T. Ueno,H. AKiyama,A. Namiki
J. Vac. Sci. Tecnol. B 23 ( 6 ) 3129 - 3131 2005.12
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Reduction of oxide layer on Ru surface by atomic-hydrogen treatment Reviewed
Nishiyama I., Oizumi H., Motai K., Izumi A., Ueno T., Akiyama H., Namiki A.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 23 ( 6 ) 3129 - 3131 2005.11
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Contamination removal from EUV multilayer using atomic hydrogen generated by heated catalyzer Reviewed
Oizumi H., Yamanashi H., Nishiyama I., Hashimoto K., Ohsono S., Masuda A., Izumi A., Matsumura H.
Progress in Biomedical Optics and Imaging - Proceedings of SPIE 5751 ( II ) 1147 - 1154 2005.09
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A novel Surface Cleaning for Copper Interconnection using Atomic Hydrogen Reviewed
A. Izumi,T. Ueno,A. Tsukinari,A. Takada
ECS Transactions 1 ( 3 ) 327 - 332 2005.04
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Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition Reviewed
Akira Heya,Toshikazu Niki,Masahiro Takano,Yasuo Yonezawa,Toshiharu Minamikawa,Susumu Muroi,Shigehira Minami,Tokuo Ikari,Akira Izumi,Atsushi Masuda,Hironobu Umemoto,Hideki Matsumura
Jpn. J. Appl. Phys. 44 ( 4A ) 1943 - 1944 2005.04
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Moisuture-Resistive Properties of SiNx Films Prepared by Catalytic Chemical Vapor Deposition below 100oC for Flexibele Organic Light-Emitting Diode Displays Reviewed
Akira Heya,Toshikazu Niki,Masahiro Takano,Yasuo Yonezawa,Toshiharu Minamikawa,Susumu Muroi,Shigehira Minami,Tokuo Ikari,Akira Izumi,Atsushi Masuda,Hironobu Umemoto,Hideki Matsumura
Jpn. J. Appl. Phys. 44 ( 4A ) 1923 - 1927 2005.04
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Improvement of deposition rate by sandblasting of tungsten wire in catalytic chemical vapor deposition Reviewed
Heya A., Niki T., Takano M., Doguchi Y., Yonezawa Y., Minamikawa T., Muroi S., Minami S., Izumi A., Masuda A., Umemoto H., Matsumura H.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 ( 4 A ) 1943 - 1944 2005.04
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Moisture-resistive properties of SiN<inf>x</inf> films prepared by catalytic chemical vapor deposition below 100° C for flexible organic light-emitting diode displays Reviewed
Heya A., Niki T., Takano M., Yonezawa Y., Minamikawa T., Muroi S., Minami S., Ikari T., Izumi A., Masuda A., Umemoto H., Matsumura H.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 ( 4 A ) 1923 - 1927 2005.04
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Effect of atomic hydrogen on preparation of highly moisture-resistive SiN<inf>x</inf> films at low substrate temperatures Reviewed
Heya A., Niki T., Takano M., Yonezawa Y., Minamikawa T., Muroi S., Minami S., Izumi A., Masuda A., Umemoto H., Matsumura H.
Japanese Journal of Applied Physics, Part 2: Letters 43 ( 12 A ) 2004.12
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Highly moisture-resistive SiN<inf>x</inf> films prepared by catalytic chemical vapor deposition Reviewed
Heya A., Niki T., Yonezawa Y., Minamikawa T., Muroi S., Izumi A., Masuda A., Umemoto H., Matsumura H.
Japanese Journal of Applied Physics, Part 2: Letters 43 ( 10 B ) 2004.10
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有機液体原料を用いたHWCVD法によるSiCNエッチストッパーの作製 Reviewed
小田 晃士, 和泉 亮
電子情報通信学会技術研究報告. ED, 電子デバイス ( 一般社団法人電子情報通信学会 ) 104 ( 152 ) 27 - 30 2004.06
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Effect of Atomic Hydrogen on Preparation of Highly Moisuture-Resistive SiNx Films at Low Substrate Temperatures Reviewed
Akira Heya,Toshikazu Niki,Masahiro Takano,Yasuto Yonezawa,Toshiharu Minamikawa,Susumu Muroi,Shigehira Minami,Akira Izumi,Atsushi Masuda,Hideki Matsumura
Jpn. J. Appl. Phys. 43 ( 12A ) L1546 - L1548 2004.04
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Highly Moisuture-Resistive SiNx Films Prepared by Catalytic Chemical Vapor Deposition Reviewed
Akira Heya,Toshikazu Niki,Yasuto Yonezawa,Toshiharu Minamikawa,Susumu Muroi,Akira Izumi,Atsushi Masuda,Hironobu Umemoto,Hideki Matsumura
Jpn. J. Appl. Phys. 43 ( 10B ) L1362 - L1364 2004.04
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Structural and electrical characterization of ultra-thin SiO2 films prepared by catalytic oxidation method Reviewed
Akira Izumi,Manabu Kudo,Hideki Matsumura
Solid State Phenomena 76-77 157 - 160 2004.04
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Highly moisture-resistive SiN<inf>x</inf> films by catalytic chemical vapor deposition and their application to passivation and antireflection coating for crystalline Si solar cells Reviewed
Matsumura H., Kikkawa A., Tsutsumi T., Masuda A., Izumi A., Takahashi M., Ohtsuka H., Moschner J.
Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion B 1147 - 1150 2003.12
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Properties of silicon nitride films prepared by combination of catalytic-nitridation and catalytic-CVD Reviewed
Izumi A., Kikkawa A., Higashimine K., Matsumura H.
Materials Research Society Symposium - Proceedings 762 163 - 168 2003.12
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Coverage properties of silicon nitride film prepared by the Cat-CVD method Reviewed
Osono S., Uchiyama Y., Kitazoe M., Saito K., Hayama M., Masuda A., Izumi A., Matsumura H.
Thin Solid Films 430 ( 1-2 ) 165 - 169 2003.04
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Formation of low-resistivity poly-Si and SiN<inf>x</inf> films by Cat-CVD for ULSI application Reviewed
Morimoto R., Yokomori C., Kikkawa A., Izumi A., Matsumura H.
Thin Solid Films 430 ( 1-2 ) 230 - 235 2003.04
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Coverage properties of silicon nitride film prepared by the Cat-CVD method Reviewed
S. Osono,Y. Uchiyama,M. Kitazoe,K. Saito,M. Hayama,A. Masuda,A. Izumi,H. Matsumura
430 165 - 169 2003.04
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Electrical properties of silicon nitride films deposited by catalytic chemical vapor deposition on catalytically nitrided Si(100) Reviewed
Akiko Kikkawa,Rui Morimoto,Akira Izumi,Hideki Matsumura
Thin Solid Films 430 430 100 - 103 2003.04
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Application of decomposed species generated by a heated catalyzer to ULSI fabrication processes Reviewed
Akira Izumi,Tsubasa Miki,Hideki Matsumura
Thin Solid Films 430 265 - 269 2003.04
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Recent progress of Cat-CVD research in Japan - bridging between the first and second Cat-CVD conferences Reviewed
Hideki Matsumura,Hironobu Umemoto,Akira Izumi,Atsushi Masuda
Thin Solid Films 430 7 - 14 2003.04
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Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application Reviewed
Rui Morimoto,Chisato Yokomori,Akiko Kikkawa,Akira Izumi,Hideki Matsumura
Thin Solid Films 430 230 - 235 2003.04
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Electrical properties of silicon nitride films deposited by catalytic chemical vapor deposition on catalytically nitrided Si(100) Reviewed
Akiko Kikkawa,Rui Morimoto,Akira Izumi,Hideki Matsumura
Thin Solid Films 430 100 - 103 2003.04
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Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing Reviewed
Morimoto R., Izumi A., Masuda A., Matsumura H.
Rapid Thermal Processing for Future Semiconductor Devices 63 - 68 2003.04
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Catalytic Chemical Vapor Deposition: Recent Development and Future Prospects Reviewed
Masuda A., Izumi A., Umemoto H., Matsumura H.
Shinku/Journal of the Vacuum Society of Japan 46 ( 2 ) 92 - 97 2003.01
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Novel photoresist removal using atomic hydrogen generated by heated catalyzer Reviewed
Miki T., Izumi A., Matsumura H.
Solid State Phenomena 92 231 - 234 2003.01
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Recent progress in industrial applications of Cat-CVD (hot-wire CVD) Reviewed
Masuda A., Izumi A., Umemoto H., Matsumura H.
Materials Research Society Symposium - Proceedings 715 111 - 122 2002.12
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Low temperature formation of silicon nitride film: Combination of Catalytic-Nitridation and Catalytic-CVD Reviewed
Izumi A., Kikkawa A., Matsumura H.
Materials Research Society Symposium - Proceedings 715 491 - 496 2002.12
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In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells Reviewed
Masuda A., Ishibashi Y., Uchida K., Kamesaki K., Izumi A., Matsumura H.
Solar Energy Materials and Solar Cells 74 ( 1-4 ) 373 - 377 2002.10
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What is the difference between catalytic CVD and plasma-enhanced CVD? Gas-phase kinetics and film properties Reviewed
Masuda A., Izumi A., Umemoto H., Matsumura H.
Vacuum 66 ( 3-4 ) 293 - 297 2002.08
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Photoresist removal using atomic hydrogen generated by heated catalyzer Reviewed
Izumi A., Matsumura H.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 ( 7 A ) 4639 - 4641 2002.07
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Low-resistivity Phosphorus-doped polycrystalline silicon thin films formed by catalytic chemical vapor deposition and successive rapid thermal annealing Reviewed
Rui Morimoto,Akira Izumi,Atsushi Masuda,Hideki Matsumura
Jpn. J. Appl. Phys. 41 501 - 506 2002.04
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What is the differences between catalytic CVD and plasma-enhanced CVD? Gas-phase kinetics and film properties Reviewed
Atsushi Masuda,Akira Izumi,Hironobu Umemoto,Hideki Matsumura
Vacuum 66 293 - 297 2002.04
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Cat-CVD技術の開発状況と応用展開 Reviewed
和泉亮,松村英樹
電子材料 41 61 - 65 2002.04
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Photoresist removal using atomic hydrogen generated by heated catalyzer Reviewed
Akira Izumi,Hideki Matsumura
Jpn. J. Appl. Phys. 41 639 - 4641 2002.04
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Effects of atomic hydrogen in gas phase on a-Si:H and poly-Si growth by catalytic CVD Reviewed
Umemoto H., Nozaki Y., Kitazoe M., Horii K., Ohara K., Morita D., Uchida K., Ishibashi Y., Komoda M., Kamesaki K., Izumi A., Masuda A., Matsumura H.
Journal of Non-Crystalline Solids 299-302 9 - 13 2002.04
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Low-resistivity phosphorus-doped polycrystalline silicon thin films formed by catalytic chemical vapor deposition and successive rapid thermal annealing Reviewed
Morimoto R., Izumi A., Masuda A., Matsumura H.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 ( 2 A ) 501 - 506 2002.02
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Cat-CVD as a new fabrication technology of semiconductor devices Reviewed
Matsumura H., Izumi A., Masuda A.
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD 2002-January 323 - 328 2002.01
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Properties of large grain-size poly-Si films by catalytic chemical sputtering Reviewed
Masuda A., Kamesaki K., Izumi A., Matsumura H.
Materials Research Society Symposium - Proceedings 664 2001.12
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Electrical and structural properties of catalytic-nitrided SiO<inf>2</inf> films Reviewed
Izumi A., Sato H., Matsumura H.
Materials Research Society Symposium - Proceedings 670 2001.12
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Surface modification of silicon related materials using a catalytic CVD system for ULSI applications Reviewed
Thin Solid Films 395 260 - 265 2001.04
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Cat-CVD法による薄膜形成とその応用展開 Reviewed
和泉亮,松村英樹
電子技術 43 37 - 41 2001.04
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Catalytic chemical sputtering: A novel method for obtaining large-grain polycrystalline silicon Reviewed
Hideki Matsumura,Koji Kamesaki,Atsushi Masuda,Akira Izumi
Jpn. Appl. Phys. 40 L289 - L291 2001.04
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Formation of high mosture and dopant diffusion resistivity silicon nitride films by catalytic-CVD method Reviewed
A. Izumi,H. Sato,H. Matsumura
J. Phys. IV France 11 Pr3 - 901 2001.04
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Low-k silicon nitride film for copper interconnects process prepared by catalytic chemical vapor deposition method at low temperature Reviewed
H. Sato,A. Izumi,A. Masuda,H. Matsumura
Thin Solid Films 395 280 - 283 2001.04
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Novel chamber cleaning method using atomic hydrogen generated by hot catalyzer Reviewed
K. Uchida,A. Izumi,H. Matsumura
Thin Solid Films 395 75 - 77 2001.04
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Proposal of catalytic chemical sputtering method and its application to prepare large grain size poly Si Reviewed
K. Kamesaki,A. Masuda,A. Izumi,H. Matsumura
Thin Solid Films 395 169 - 172 2001.04
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Catalytic chemical sputtering: A novel method for obtaining large-grain polycrystalline silicon Reviewed
Matsumura H., Kamesaki K., Masuda A., Izumi A.
Japanese Journal of Applied Physics, Part 2: Letters 40 ( 3 B ) 2001.03
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Structural and electrical characterization of ultra-thin SiO<inf>2</inf> films prepared by catalytic oxidation method Reviewed
Izumi A., Kudo M., Matsumura H.
Solid State Phenomena 76-77 157 - 160 2001.01
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Low temperature nitridation of SiO2 films using a catalytic-CVD system Reviewed
Izumi A., Sato H., Matsumura H.
Materials Research Society Symposium - Proceedings 611 2001.01
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Formation of high moisture and dopant diffusion resistivity silicon nitride films by catalytic-CVD method Reviewed
Izumi A., Sato H., Matsumura H.
Journal De Physique. IV : JP 11 ( 3 ) 2001.01
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Preparation of high quality ultra-thin gate dielectrics by CAT-CVD and catalytic anneal Reviewed
Sato H., Izumi A., Matsumura H.
Materials Research Society Symposium - Proceedings 606 121 - 126 2000.12
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Structural and electrical characterization of ultra-thin SiO<inf>2</inf> films prepared by catalytic oxidation method Reviewed
Izumi A., Kudo M., Matsumura H.
Diffusion and Defect Data Pt.B: Solid State Phenomena 76-77 157 - 160 2000.12
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Low temperature direct-oxidation of Si using activated oxygen generated by tungsten catalytic reaction Reviewed
Kudo M., Izumi A., Matsumura H.
Materials Research Society Symposium - Proceedings 592 207 - 212 2000.12
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Control of polycrystalline silicon structure by the two-step deposition method Reviewed
Heya A., Izumi A., Masuda A., Matsumura H.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 39 ( 7 A ) 3888 - 3895 2000.12
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Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures Reviewed
Sato H., Izumi A., Matsumura H.
Applied Physics Letters 77 ( 17 ) 2752 - 2754 2000.10
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Plasma and fluorocarbon-gas free Si dry etching process using a Cat-CVD system Reviewed
Izumi A., Sato H., Hashioka S., Kudo M., Matsumura H.
Microelectronic Engineering 51 495 - 503 2000.05
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Plasma and fluorocarbon-gas free Si dry ething process using a Cat-CVD system Reviewed
Akira Izumi,Hidekazu Sato,Shingi Hashioka,Manabu Kudo,Hideki Matsumura
Microelectronic Engineering 51-52 493 - 493 2000.04
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Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperature Reviewed
Hidekazu Sato,Akira Izumi,Hideki Matsumura
Appl. Phys. Lett. 77 2752 - 2754 2000.04
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Control of polycrystalline silicon structure by the two-step deposition method Reviewed
Jpn. J. Appl. Phys. 39 3888 - 3888 2000.04
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Cat-CVD process and its application to preparation of Si-based thin films Reviewed
Matsumura H., Masuda A., Izumi A.
Materials Research Society Symposium - Proceedings 557 67 - 78 1999.12
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Ultra-thin high quality silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures Reviewed
Sato H., Izumi A., Matsumura H.
Materials Research Society Symposium - Proceedings 567 155 - 160 1999.12
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Low-temperature oxidation of silicon surface using a gas mixture of H<inf>2</inf> and O<inf>2</inf> in a catalytic chemical vapor deposition system Reviewed
Izumi A., Sohara S., Kudo M., Matsumura H.
Electrochemical and Solid-State Letters 2 ( 8 ) 388 - 389 1999.08
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Low-Temperature Oxidation of Silicon Surface Using a Gas Mixture of H<sub>2</sub> and O<sub>2</sub> in a Catalytic Chemical Vapor Deposition System Reviewed
Electrochemical and Solid-State Letters 2 ( 8 ) 388 - 388 1999.04
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Low-temperature oxidation of silicon surface using a gas mixture of H<sub>2</sub> and O<sub>2</sub> in a catalytic chemical vapor deposition system Reviewed
Electrochemical and Solid-State Lett. 2 388 - 388 1999.04
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Surface cleaning and nitridation of compound semiconductors using gas-decomposition reaction in Cat-CVD method Reviewed
Thin Solid Films 343-344 528 - 528 1999.04
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Surface cleaning and nitridation of compound semiconductors using gas-decomposition reaction in Cat-CVD method Reviewed
Thin Solid Films 343 ( 344 ) 528 - 528 1999.04
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Low temperature formation of ultra-thin SiO<inf>2</inf>layers using direct oxidation method in a catalytic chemical vapor deposition system Reviewed
Izumi A., Sohara S., Kudo M., Matsumura H.
Materials Research Society Symposium - Proceedings 567 115 - 120 1999.01
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Guide for low-temperature and high-rate deposition of device quality poly-silicon films by Cat-CVD method Reviewed
Heya A., Nakata K., Izumi A., Matsumura H.
Materials Research Society Symposium - Proceedings 507 435 - 439 1999.01
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Properties of catalytic CVD SiN<inf>x</inf> for antireflection coatings Reviewed
Izumi A., Matsumura H.
Materials Research Society Symposium - Proceedings 555 161 - 166 1999.01
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Low temperature formation of SiN<inf>x</inf> gate insulator for thin film transistor using CAT-CVD method Reviewed
Izumi A., Ichise T., Matsumura H.
Materials Research Society Symposium - Proceedings 508 151 - 156 1998.12
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Heteroepitaxial Growth of CdF<sub>2</sub> layers on CaF<sub>2</sub> / Si(111) by Molecular Beam Epitaxy Reviewed
Japanese Journal of Applied Physics 37 ( 1 ) 295 - 295 1998.04
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Heteroepitaxial growth of CdF<inf>2</inf>layers on CaF<inf>2</inf>/Si(III) by molecular beam epitaxy Reviewed
Izumi A., Tsutsui K., Sokolov N.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37 ( 1 ) 295 - 296 1998.01
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Low-temperature nitridation of silicon surface using NH<inf>3</inf>-decomposed species in a catalytic chemical vapor deposition system Reviewed
Izumi A., Matsumura H.
Applied Physics Letters 71 ( 10 ) 1371 - 1372 1997.09
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触媒CVD(Cat-CVD)法による低温薄膜形成 Reviewed
和泉 亮
表面 36 ( 3 ) 149 - 149 1997.04
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Low-temperature nitridation of silicon surface using NH<sub>3</sub>-decomposed species in a Catalytic chemical vapor deposition system Reviewed
Applied Physics Letters 71 ( 10 ) 1371 - 1371 1997.04
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CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode Fabricated on Si(111) Reviewed
Japanese Journal of Applied Physics 36 ( 3B ) 1849 - 1849 1997.04
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Cat-CVD法を用いた薄膜堆積と半導体表面改質 Reviewed
和泉 亮
表面技術 48 ( 11 ) 1082 - 1082 1997.04
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CdF<inf>2</inf>/CaF<inf>2</inf> resonant tunneling diode fabricated on Si(111) Reviewed
Izumi A., Matsubara N., Kushida Y., Tsutsui K., Sokolov N.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 ( 3 SUPPL. B ) 1849 - 1852 1997.03
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Formation of large conduction band discontinuities of heterointerfaces using CdF<inf>2</inf> and CaF<inf>2</inf> on Si(111) Reviewed
Izumi A., Matsubara N., Kushida Y., Tsutsui K., Sokolov N.
Materials Research Society Symposium - Proceedings 448 171 - 175 1997.01
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Low-temperature formation of device-quality polysilicon films by cat-CVD method Reviewed
Matsumura H., Heya A., Iizuka R., Izumi A., He A., Otsuka N.
Materials Research Society Symposium - Proceedings 452 983 - 988 1997.01
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Growth of CdF <inf>2</inf> /CaF <inf>2</inf> Si(111) heterostructure with abrupt interfaces by using thin CaF <inf>2</inf> buffer layer Reviewed
Izumi A., Kawabata K., Tsutsui K., Sokolov N., Novikov S., Khilko A.
Applied Surface Science 104-105 417 - 421 1996.09
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Growth of CdF<sub>2</sub> / CaF<sub>2</sub> Si(III) heterostructure with abrupt interfaces by using thin CaF<sub>2</sub> buffer layer Reviewed
Applied surface science 104 105417 - 105417 1996.04
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Study of band offsets in CdF<inf>2</inf>/CaF<inf>2</inf>/Si(111) heterostructures using x-ray photoelectron spectroscopy Reviewed
Izumi A., Hirai Y., Tsutsui K., Sokolov N.
Applied Physics Letters 67 1995.12
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MBE-growth and characterization of CdF<inf>2</inf> layers on Si(111) Reviewed
Novikov S., Faleev N., Izumi A., Khilko A., Sokolov N., Solov'ev S., Tsutsui K.
Microelectronic Engineering 28 ( 1-4 ) 213 - 216 1995.06
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MBE-grown and Characterization of CdF<sub>2</sub> layers on Si(III) Reviewed
Microelectronic Engineering 28 213 - 213 1995.04
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High-quality CdF<sub>2</sub> layer growth on CaF<sub>2</sub> / Si(III) Reviewed
Journal of Crystal Growth 150 1115 - 1115 1995.04
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Characterization of molecular beam epitaxy grown CdF<sub>2</sub> layers by x-ray diffraction and CaF<sub>2</sub> : Sm photoluminescence probe Reviewed
Journal of vacuum Science and Technology A 13 ( 6 ) 2703 - 2703 1995.04
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Study of band offsets in CdF<sub>2</sub>/CaF<sub>2</sub>/Si((]G0003[))heterostructures using X-ray photoelectron spectroscopy Reviewed
Applied Physics Letters 67 ( 19 ) 2792 - 2792 1995.04
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High-quality CdF<sub>2</sub> layer growth on CaF<sub>2</sub>/Si((]G0003[)) Reviewed
Journal of Crystal Growth 150 1115 - 1115 1995.04
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High-quality CdF<inf>2</inf> layer growth on CaF<inf>2</inf>/Si(111) Reviewed
Izumi A., Tsutsui K., Sokolov N., Faleev N., Gastev S., Novikov S., Yakovlev N.
Journal of Crystal Growth 150 1115 - 1118 1995.01
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Surface modification of CaF<inf>2</inf> in atomic layer scale by electron beam exposure Reviewed
Hwang S., Izumi A., Tsutsui K., Furukawa S.
Applied Surface Science 82-83 ( C ) 523 - 527 1994.12
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Molecular beam epitaxy of CdF<inf>2</inf> layers on CaF<inf>2</inf>(111) and Si(111) Reviewed
Sokolov N., Gastev S., Novikov S., Yakovlev N., Izumi A., Furukawa S.
Applied Physics Letters 64 ( 22 ) 2964 - 2966 1994.12
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Surface modification of CaF<inf>2</inf> on Si(111) by low-energy electron beam for over growth of GaAs films Reviewed
Izumi A., Tsutsui K., Furukawa S.
Journal of Applied Physics 75 ( 5 ) 2307 - 2311 1994.12
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Surface modification of CaF<sub>2</sub> on Si((]G0003[))by low energy electron beam for over growth of GaAs films Reviewed
Journal of Applied Physics 75 ( 5 ) 2307 - 2307 1994.04
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Molecular beam epitaxy of CdF<sub>2</sub> layers on CaF<sub>2</sub>(III) and Si(III) Reviewed
Applied Physics Letters 64 ( 22 ) 2964 - 2964 1994.04
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Surface modification of CaF<sub>2</sub> in atomic layer scale by electron beam exposure Reviewed
Applied Surface Science 82 83523 - 83523 1994.04