Faculty Profiles - IZUMI Akira

Papers - IZUMI Akira

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Heavy phosphorus doping of diamond by hot-filament chemical vapor deposition Reviewed International journal

Katamune Y., Izumi A., Ichikawa K., Koizumi S.

Diamond and Related Materials 134 2023.04

n-Type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation Reviewed

Katamune Y., Mori D., Arikawa D., Izumi A., Shimaoka T., Ichikawa K., Koizumi S.

Applied Physics A: Materials Science and Processing 126 ( 11 ) 2020.11

Control of the chemical composition of silicon carbon nitride films formed from hexamethyldisilazane in H<inf>2</inf>/NH<inf>3</inf> mixed gas atmospheres by hot-wire chemical vapor deposition Reviewed

Katamune Y., Mori H., Morishita F., Izumi A.

Thin Solid Films 695 2020.02

Formation of phosphorus-incorporated diamond films by hot-filament chemical vapor deposition using organic phosphorus solutions Reviewed

Katamune Y., Arikawa D., Mori D., Izumi A.

Thin Solid Films 677 28 - 32 2019.05

Low-temperature silicon oxidation using oxidizing radicals produced by catalytic decomposition of H Reviewed

Katamune Y., Negi T., Tahara S., Fukushima K., Izumi A.

Japanese Journal of Applied Physics 57 ( 12 ) 2018.10

Growth of single-crystalline diamond by hot filament CVD using organic phosphorus solution

Katamune Yuki, Arikawa Daisuke, Mori Daichi, Izumi Akira

JSAP Annual Meetings Extended Abstracts ( The Japan Society of Applied Physics ) 2018.2 ( 0 ) 1352 - 1352 2018.09

Growth of diamond thin films on SiCN underlayers by hot filament chemical vapor deposition Reviewed

635 53 - 57 2017.08

Evaluation of friction coefficient and adhesion properties of silicon carbon nitride films prepared by HWCVD Reviewed

131 ( 3 ) 463 - 466 2017.03

Study of low-temperature oxidation of silicon and OH radical generation by heated catalyzer

Negi Takanobu, Katamune Yuki, Izumi Akira

Abstract of annual meeting of the Surface Science of Japan 36 ( 0 ) 2016.01

A 12GHz band low noise block for satellite receiver development with 0.18μm CMOS Process Reviewed

134 ( 11 ) 1656 - 1663 2014.11

A 12GHz Band Low Noise Block for Satellite Receiver Development with 0.18µm CMOS Process Reviewed

Miyashita Kiyoshi, Izumi Akira

IEEJ Transactions on Electronics, Information and Systems ( The Institute of Electrical Engineers of Japan ) 134 ( 11 ) 1656 - 1663 2014.01

Language：Japanese Publishing type：Research paper (scientific journal)

This paper presents a Ku-band low-noise block that includes a PLL with very low susceptibility to power supply in a 0.18µm CMOS technology. The front-end down-converts the input signal from the Ku-band (12∼18GHz) to the IF (∼2.1GHz). The fully integrated LNB is dedicated to both satellite receivers and microwave link products. The VCO that includes full differential varactor shows a very low supply sensitivity (Kpss=-0.18 [%/V]) that can eliminates on chip voltage regulator. The LNB performances include 28.2dB gain, -19.3dBm IIP3, 2.5dB NF, and -107dBc/Hz phase noise at 1MHz offset. The front-end consumes 364mW from a 1.8V supply. The core size is about 0.95×2.3 [mm<sup>2</sup>].

DOI： 10.1541/ieejeiss.134.1656

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130004704422

Evaluation of friction-coefficient of silicon carbon nitride films by HWCVD method Reviewed

Yamada Tomohiro, Kawashima Shingo, Nakagami Masatoshi, Kadotani Yutaka, Izumi Akira

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2012 ( 0 ) 313 - 314 2012.01

Language：Japanese Publishing type：Research paper (other academic)

We have studied the silicon carbon nitride (SiCN) film by hot-wire CVD (HWCVD) method which is possible to deposit films with low temperature in large area.This report describes the characteristics of SiCN films, such as peel-strength, hardness, and a coefficient of friction, for the purpose of utilizing a SiCN film in the machining field.

DOI： 10.11522/pscjspe.2012A.0.313.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130004660665

Surface Cleaning for Metals using Atomic Hydrogen Generated by Heated Catalyzer Invited Reviewed

IZUMI Akira

Hyomen Kagaku ( The Surface Science Society of Japan ) 31 ( 4 ) 196 - 201 2010.04

Authorship：Lead author Language：Japanese Publishing type：Research paper (scientific journal)

There are a lot of demands for the semiconductor manufacturing process of large-scale integrated circuit(LSI) and LSI package. Especially, low temperature processes for surface cleaning are strongly required. In this paper, we introduce a novel cleaning technology of various metals using atomic hydrogen generated by a heated catalyzer, hot wire (HW) method. In the case of solder bump cleaning in semiconductor packaging, the oxide layer on the Sn surface was completed reduced, and it was confirmed the effectiveness in improving the flip-chip bonding by the atomic hydrogen treatment. In the case of Cu nano ink-jet wiring, the resistivity was drastically decreased by the atomic hydrogen treatment.

DOI： 10.1380/jsssj.31.196

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/10026319794

Improvement in flip-chip bonding by reduction of oxides using hydrogen radicals Reviewed

Nakashima T., Miyamoto K., Sato M., Nogita K., Izumi A.

Proceedings - 2009 International Symposium on Microelectronics, IMAPS 2009 1028 - 1031 2009.12

Language：English Publishing type：Research paper (international conference proceedings)

The demand for high-density mounting increased because of the miniaturizing of a variety of electronic equipment such as personal computers and cellular phones. In response, the use of packaging methods such as flip-chip bonding has also increased to meet this demand. However, during the soldering process, the presence of oxides on the solder bump surface can obstruct the interconnections because oxides with a high melting point do not melt during the process. Methods for removing oxides from the solder bump surface have been developed. In this paper, we propose a novel oxide reduction method for the solder bump surface. This method uses hydrogen radicals generated by a heated catalyzer consisting of a tungsten wire. We have successfully demonstrated that the removal of oxides from the solder bump surface is possible by this treatment. Furthermore, we have verified that this method is effective in improving the reliability of flip-chip bonding without flux.

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84876923772&origin=inward

Crystallization of D <inf>2</inf> O thin films on Ru(0 0 1) surfaces Reviewed

Yamauchi T., Mine K., Nakashima Y., Izumi A., Namiki A.

Applied Surface Science 256 ( 4 ) 1124 - 1127 2009.11

Novel materials for electronic device fabrication using ink-jet printing technology Reviewed

Kumashiro Y., Nakako H., Inada M., Yamamoto K., Izumi A., Ishihara M.

Applied Surface Science 256 ( 4 ) 1019 - 1022 2009.11

Language：English Publishing type：Research paper (scientific journal)

Novel materials and a metallization technique for the printed electronics were studied. Insulator inks and conductive inks were investigated. For the conductive ink, the nano-sized copper particles were used as metallic sources. These particles were prepared from a copper complex by a laser irradiation process in the liquid phase. Nano-sized copper particles were consisted of a thin copper oxide layer and a metal copper core wrapped by the layer. The conductive ink showed good ink-jettability. In order to metallize the printed trace of the conductive ink on a substrate, the atomic hydrogen treatment was carried out. Atomic hydrogen was generated on a heated tungsten wire and carried on the substrate. The temperature of the substrate was up to 60 °C during the treatment. After the treatment, the conductivity of a copper trace was 3 μΩ cm. It was considered that printed wiring boards can be easily fabricated by employing the above materials. © 2009 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.apsusc.2009.05.134

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=70749122824&origin=inward

A novel copper interconnection cleaning by atomic hydrogen using diluted hydrogen gas Reviewed

K. Abe,A. Izumi

Solid state Phenomena 145-146 389 - 392 2009.04

Novel materials for electronic devaice fabrication using ink-jet printing technology Reviewed

Y. Kumashiro,H. Nakako,M. Inada,K. Yamamoto,A. Izumi

Applied Surface Science 256 1019 - 1022 2009.04

Estimation of hydrogen radical density generated from various kinds of catalysts Reviewed

K. Abe,M. Ida,A. Izumi,S. Terashima,T. Sudo,Y. Watanabe,Y. Fukuda

Thin Solid Films 517 3449 - 3451 2009.04

Improvement of Flip-chip Bonding by reduction of oxide using hydrogen radical Reviewed

Nakashima Tsuyoshi, Miyamoto Koji, Sato Mitchihiro, Nogita Kanta, Izumi Akira

Proceedings of JIEP Annual Meeting ( The Japan Institute of Electronics Packaging ) 23 ( 0 ) 54 - 55 2009.01

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Papers - IZUMI Akira