Faculty Profiles - IZUMI Akira

Papers - IZUMI Akira

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Novel chamber cleaning method using atomic hydrogen generated by hot catalyzer Reviewed

K. Uchida,A. Izumi,H. Matsumura

Thin Solid Films 395 75 - 77 2001.04

Proposal of catalytic chemical sputtering method and its application to prepare large grain size poly Si Reviewed

K. Kamesaki,A. Masuda,A. Izumi,H. Matsumura

Thin Solid Films 395 169 - 172 2001.04

Catalytic chemical sputtering: A novel method for obtaining large-grain polycrystalline silicon Reviewed

Matsumura H., Kamesaki K., Masuda A., Izumi A.

Japanese Journal of Applied Physics, Part 2: Letters 40 ( 3 B ) 2001.03

Structural and electrical characterization of ultra-thin SiO<inf>2</inf> films prepared by catalytic oxidation method Reviewed

Izumi A., Kudo M., Matsumura H.

Solid State Phenomena 76-77 157 - 160 2001.01

Authorship：Lead author Language：English Publishing type：Research paper (international conference proceedings)

© (2001) Trans Tech Publications, Switzerland. Ultra-thin silicon dioxide films can be formed at temperatures as low as 240“C by direct oxidation of Si using active oxygen species generated by catalytic cracking reactions between tungsten and oxygen related gases in a catalytic chemical vapor deposition (Cat-CVD) system. The structural and electrical properties of such films are investigated. It is found that the density of Si atoms in intermediate oxidation states and the density of films determined by etch rate in dilute HF solution are comparable to those of a conventional thermal oxidation at 900°C. The electrical properties and dielectric constant are also comparable to those of thermally oxidized films. The interface state density is as low as 2 × 1011 cm-2eV-1 after rapid thermal annealing at 850°C for 1min in Ar.

DOI： 10.4028/www.scientific.net/SSP.76-77.157

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Low temperature nitridation of SiO2 films using a catalytic-CVD system Reviewed

Izumi A., Sato H., Matsumura H.

Materials Research Society Symposium - Proceedings 611 2001.01

Authorship：Lead author Language：English Publishing type：Research paper (international conference proceedings)

This paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

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Formation of high moisture and dopant diffusion resistivity silicon nitride films by catalytic-CVD method Reviewed

Izumi A., Sato H., Matsumura H.

Journal De Physique. IV : JP 11 ( 3 ) 2001.01

Preparation of high quality ultra-thin gate dielectrics by CAT-CVD and catalytic anneal Reviewed

Sato H., Izumi A., Matsumura H.

Materials Research Society Symposium - Proceedings 606 121 - 126 2000.12

Language：English Publishing type：Research paper (scientific journal)

This paper reports a feasibility of Cat-CVD system for improvement in characteristics of ultra thin gate dielectrics. Particularly, the effects of post deposition catalytic anneal (Cat-anneal) by using hydrogen (H2)-decomposed species or NH3-decomposed species produced by catalytic cracking of H2 or NH3, are investigated. The C-V characteristics are measured by MIS diode for the 4.5nm-thick Cat-CVD SiNx and 8nm-thick sputtered SiO2 for comparison. The small hysteresis loop is seen in the C-V curve of both SiNx and SiO2 films as deposition. However, it is improved by the Cat-anneal using H2 or NH3, and the hysteresis loop completely disappears from the C-V curves for both films. This result demonstrates that the Cat-anneal is a powerful technique to improve quality of insulating films, such as Cat-CVD SiNx and even sputtered SiO2 films. In addition, the leakage current of SiNx films with 2.8nm equivalent oxide thickness is decreased by several orders of magnitude than that of the conventional thermal SiO2 of similar EOT and the breakdown field is increased several MV/cm by Cat-anneal at 300°C.

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Structural and electrical characterization of ultra-thin SiO<inf>2</inf> films prepared by catalytic oxidation method Reviewed

Izumi A., Kudo M., Matsumura H.

Diffusion and Defect Data Pt.B: Solid State Phenomena 76-77 157 - 160 2000.12

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

Ultra-thin silicon dioxide films can be formed at temperatures as low as 240°C by direct oxidation of Si using active oxygen species generated by catalytic cracking reactions between tungsten and oxygen related gases in a catalytic chemical vapor deposition (Cat-CVD) system. The structural and electrical properties of such films are investigated. It is found that the density of Si atoms in intermediate oxidation states and the density of films determined by etch rate in dilute HF solution are comparable to those of a conventional thermal oxidation at 900°C. The electrical properties and dielectric constant are also comparable to those of thermally oxidized films. The interface state density is as low as 2 × 1011 cm-2eV-1 after rapid thermal annealing at 850°C for 1min in Ar.

Scopus

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Low temperature direct-oxidation of Si using activated oxygen generated by tungsten catalytic reaction Reviewed

Kudo M., Izumi A., Matsumura H.

Materials Research Society Symposium - Proceedings 592 207 - 212 2000.12

Control of polycrystalline silicon structure by the two-step deposition method Reviewed

Heya A., Izumi A., Masuda A., Matsumura H.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 39 ( 7 A ) 3888 - 3895 2000.12

Language：English Publishing type：Research paper (scientific journal)

Polycrystalline silicon (poly-Si) films arc obtained at temperatures below 400°C by the catalytic chemical vapor deposition (Cat-CVD), often called "hot-wire CVD" method, using two-step deposition (TSD). In TSD, the substrate temperature is changed during deposition from the initial step for a short time of 200 s to the second step of 820 s. A comparative study on the structural properties of Cat-CVD poly-Si films prepared by the TSD method and those of the films prepared by conventional method was carried out using Raman spectroscopy, atomic force microscopy, reflection high-energy electron diffraction and transmission electron microscopy observation. It is found that the surface morphology, grain structure and thickness of the amorphous Si incubation layer are all correlated, and the structures arc changed by TSD method. © 2000 The Japan Society of Applied Physics.

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Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures Reviewed

Sato H., Izumi A., Matsumura H.

Applied Physics Letters 77 ( 17 ) 2752 - 2754 2000.10

Language：English Publishing type：Research paper (scientific journal)

The feasibility of using ultrathin silicon nitride (SiNx) films, prepared by catalytic chemical vapor deposition (Cat-CVD) method, as an ultrathin gate dielectric is reported. The effects of postdeposition treatments carried out using hydrogen (H2)-decomposed species or NH3-decomposed species formed by catalytic cracking of H2and NH3are also studied. A small hysteresis loop is seen in the C-V curve of as-deposited Cat-CVD SiNxfilms. The leakage current in the case of these films with equivalent oxide thickness (EOT) of 3 nm is slightly larger than that in the conventional thermal SiO2films of similar EOT. However, it is found that the properties of Cat-CVD SiNxfilms are markedly improved by the postdeposition H2or NH3treatments, that is, the hysteresis loop disappears and the leakage current decreases by three orders of magnitude. © 2000 American Institute of Physics.

DOI： 10.1063/1.1319513

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Plasma and fluorocarbon-gas free Si dry etching process using a Cat-CVD system Reviewed

Izumi A., Sato H., Hashioka S., Kudo M., Matsumura H.

Microelectronic Engineering 51 495 - 503 2000.05

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

A heated tungsten filament was used to catalyze the gas phase etching of crystalline silicon with hydrogen at a substrate temperature of 200°C for obtaining plasma and contamination free etching. Etch rates, between 100 and 200 nm/min were obtained in a pure hydrogen ambient in the pressure range of 0.01-0.5 Torr. No etching effect was observed in the case of SiO2. No tungsten or other metal and carbon contaminations on the etched silicon surface were detected by X-ray photoelectron spectroscopy.

DOI： 10.1016/S0167-9317(99)00504-3

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Plasma and fluorocarbon-gas free Si dry ething process using a Cat-CVD system Reviewed

Akira Izumi,Hidekazu Sato,Shingi Hashioka,Manabu Kudo,Hideki Matsumura

Microelectronic Engineering 51-52 493 - 493 2000.04

Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperature Reviewed

Hidekazu Sato,Akira Izumi,Hideki Matsumura

Appl. Phys. Lett. 77 2752 - 2754 2000.04

Control of polycrystalline silicon structure by the two-step deposition method Reviewed

Jpn. J. Appl. Phys. 39 3888 - 3888 2000.04

Cat-CVD process and its application to preparation of Si-based thin films Reviewed

Matsumura H., Masuda A., Izumi A.

Materials Research Society Symposium - Proceedings 557 67 - 78 1999.12

Language：English Publishing type：Research paper (scientific journal)

This is to review the present understanding on Cat-CVD (catalytic chemical vapor deposition) or hot wire CVD. Firstly, the deposition mechanism in Cat-CVD process is briefly mentioned along with key issues such as the effect of heat radiation and a method to avoid contamination from the catalyzer. Secondly, the properties of Cat-CVD Si-based thin films such as amorphous silicon (a-Si), polycrystalline silicon (poly-Si) and silicon nitride (SiNx) films are demonstrated, and finally, the feasibility of such films for industrial application is discussed.

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Ultra-thin high quality silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures Reviewed

Sato H., Izumi A., Matsumura H.

Materials Research Society Symposium - Proceedings 567 155 - 160 1999.12

Language：English Publishing type：Research paper (international conference proceedings)

This is to report the feasibility of ultra-thin silicon nitride (SiNx) films, prepared by catalytic chemical vapor deposition (Cat-CVD) method, as an ultra-thin gate insulator. In the Cat-CVD method, the deposition gases such as a gaseous mixture of silane (SiH4) and ammonia (NH3) are decomposed by catalytic cracking reactions with a heated tungsten catalyzer placed near substrates, and SiNx films are formed at substrate temperatures around 300°C without using plasma. In the paper, additionally the effect of post-deposited treatments by using NH3-decomposed species or hydrogen (H2)-decomposed species formed by catalytic cracking of NH3 and H2 are also studied. It is found that a small hysteresis loop is seen in the C-V curve of as-deposited Cat-CVD SiNx films and that the leakage currents with thickness of 3nm equivalent oxide thickness (EOT) is slightly larger than that in the conventional thermal SiO2 of similar EOT. However, it is also found that the properties of Cat-CVD SiNx films are drastically improved by the post-deposited H2 or NH3 treatments, that is, the hysteresis loop disappears and the leakage current decreases by three orders of magnitude.

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Low-temperature oxidation of silicon surface using a gas mixture of H<inf>2</inf> and O<inf>2</inf> in a catalytic chemical vapor deposition system Reviewed

Izumi A., Sohara S., Kudo M., Matsumura H.

Electrochemical and Solid-State Letters 2 ( 8 ) 388 - 389 1999.08

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

This paper reports a procedure for low-temperature oxidation of silicon surfaces using activated species produced by catalytic decomposition of a gas mixture of H2 and O2 on heated tungsten in a catalytic chemical vapor deposition system. The surface of Si(100) was oxidized at temperatures as low as 200 °C. Silicon oxide layers are obtained with a maximum thickness of 4.2 nm. X-ray photoelectron spectroscopy measurements revealed that the density of intermediate oxidation states is comparable with the thermally oxidized sample whose value is as low as 7×1014 cm-2.

DOI： 10.1149/1.1390846

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Low-Temperature Oxidation of Silicon Surface Using a Gas Mixture of H2 and O2 in a Catalytic Chemical Vapor Deposition System Reviewed

Electrochemical and Solid-State Letters 2 ( 8 ) 388 - 388 1999.04

Low-temperature oxidation of silicon surface using a gas mixture of H2 and O2 in a catalytic chemical vapor deposition system Reviewed

Electrochemical and Solid-State Lett. 2 388 - 388 1999.04

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Papers - IZUMI Akira