Faculty Profiles - IZUMI Akira

Papers - IZUMI Akira

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Surface cleaning and nitridation of compound semiconductors using gas-decomposition reaction in Cat-CVD method Reviewed

Thin Solid Films 343-344 528 - 528 1999.04

Surface cleaning and nitridation of compound semiconductors using gas-decomposition reaction in Cat-CVD method Reviewed

Thin Solid Films 343 ( 344 ) 528 - 528 1999.04

Low temperature formation of ultra-thin SiO<inf>2</inf>layers using direct oxidation method in a catalytic chemical vapor deposition system Reviewed

Izumi A., Sohara S., Kudo M., Matsumura H.

Materials Research Society Symposium - Proceedings 567 115 - 120 1999.01

Guide for low-temperature and high-rate deposition of device quality poly-silicon films by Cat-CVD method Reviewed

Heya A., Nakata K., Izumi A., Matsumura H.

Materials Research Society Symposium - Proceedings 507 435 - 439 1999.01

Language：English Publishing type：Research paper (international conference proceedings)

Polycrystalline silicon (poly-Si) films are obtained at temperatures lower than 400 °C by catalytic chemical vapor deposition (Catalytic CVD = Cat-CVD) method, often called hot-wire CVD method. Structural properties of the Cat-CVD poly-Si films, deposited with various gas pressures, are studied by Raman scattering spectroscopy and X-ray diffraction technique. It is found that there are two recipes for obtaining device quality poly-Si films, that is, such poly-Si films are obtained at low gas pressure around 1 mTorr or less as already reported, and also at high gas pressure around 0.1 to 1 Torr. It is also found that, in addition to catalyzer temperature, the gas pressure is a key factors to obtain device quality poly-Si films at high deposition rates.

Scopus

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Properties of catalytic CVD SiN<inf>x</inf> for antireflection coatings Reviewed

Izumi A., Matsumura H.

Materials Research Society Symposium - Proceedings 555 161 - 166 1999.01

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

We propose a novel preparation of high quality silicon nitride (SiNx) films by catalytic chemical vapor deposition (Cat-CVD) method for the application of antireflection coatings. It is found that the refractive index (n) of the Cat-CVD SiNx films are controlled from 2.0 to 2.5 by varying the flow ratio of SiH4 and NH3. The properties of the SiNx (n = 2.0) are investigated, and it is found that, 1) the 16-BHF etching rate of the Cat-CVD SiNx film is only 23 A/min, and the film shows excellent moisture resistance, 2) the Cat-CVD SiNx film shows good insulating properties, and the breakdown electric field is higher than 9 MV/cm and the interface state density is 5.6 × 1011 cm-2eV-1, 3) the step coverage of the film is very conformal.

Scopus

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Low temperature formation of SiN<inf>x</inf> gate insulator for thin film transistor using CAT-CVD method Reviewed

Izumi A., Ichise T., Matsumura H.

Materials Research Society Symposium - Proceedings 508 151 - 156 1998.12

Heteroepitaxial Growth of CdF2 layers on CaF2 / Si(111) by Molecular Beam Epitaxy Reviewed

Japanese Journal of Applied Physics 37 ( 1 ) 295 - 295 1998.04

Heteroepitaxial growth of CdF<inf>2</inf>layers on CaF<inf>2</inf>/Si(III) by molecular beam epitaxy Reviewed

Izumi A., Tsutsui K., Sokolov N.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37 ( 1 ) 295 - 296 1998.01

Low-temperature nitridation of silicon surface using NH<inf>3</inf>-decomposed species in a catalytic chemical vapor deposition system Reviewed

Izumi A., Matsumura H.

Applied Physics Letters 71 ( 10 ) 1371 - 1372 1997.09

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

This letter reports a procedure for low-temperature nitridation of silicon surfaces using species produced by NH3catalytic decomposition on heated tungsten in a catalytic chemical vapor deposition system. The surface of Si(100) was nitrided at temperatures as low as 200 °C. Silicon oxinitride films are obtained with a stoichiometry Si:N:O=1:0.9:0.3, a maximum thickness as high as 4.8 nm and an electrical breakdown field of 6 MV/cm. © 1997 American Institute of Physics.

DOI： 10.1063/1.119897

Scopus

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触媒CVD(Cat-CVD)法による低温薄膜形成 Reviewed

和泉　亮

表面 36 ( 3 ) 149 - 149 1997.04

Low-temperature nitridation of silicon surface using NH3-decomposed species in a Catalytic chemical vapor deposition system Reviewed

Applied Physics Letters 71 ( 10 ) 1371 - 1371 1997.04

CdF2/CaF2 Resonant Tunneling Diode Fabricated on Si(111) Reviewed

Japanese Journal of Applied Physics 36 ( 3B ) 1849 - 1849 1997.04

Cat-CVD法を用いた薄膜堆積と半導体表面改質 Reviewed

和泉　亮

表面技術 48 ( 11 ) 1082 - 1082 1997.04

CdF<inf>2</inf>/CaF<inf>2</inf> resonant tunneling diode fabricated on Si(111) Reviewed

Izumi A., Matsubara N., Kushida Y., Tsutsui K., Sokolov N.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 ( 3 SUPPL. B ) 1849 - 1852 1997.03

Formation of large conduction band discontinuities of heterointerfaces using CdF<inf>2</inf> and CaF<inf>2</inf> on Si(111) Reviewed

Izumi A., Matsubara N., Kushida Y., Tsutsui K., Sokolov N.

Materials Research Society Symposium - Proceedings 448 171 - 175 1997.01

Low-temperature formation of device-quality polysilicon films by cat-CVD method Reviewed

Matsumura H., Heya A., Iizuka R., Izumi A., He A., Otsuka N.

Materials Research Society Symposium - Proceedings 452 983 - 988 1997.01

Language：English Publishing type：Research paper (international conference proceedings)

Polycrystalline silicon (poly-Si) films are deposited at temperatures lower than 300-400°C by the cat-CVD method. In the method, a SiH4 and H2 gas-mixture is decomposed by catalytic cracking reactions with a heated tungsten catalyzer placed near substrates. Carrier transport, optical and structural properties are investigated for this cat-CVD poly-Si. The films show both large carrier mobility and large optical absorption for particular deposition conditions. The cat-CVD poly-Si films are found to be one of the useful materials for thin film transistors and thin film solar cells.

Scopus

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Growth of CdF <inf>2</inf> /CaF <inf>2</inf> Si(111) heterostructure with abrupt interfaces by using thin CaF <inf>2</inf> buffer layer Reviewed

Izumi A., Kawabata K., Tsutsui K., Sokolov N., Novikov S., Khilko A.

Applied Surface Science 104-105 417 - 421 1996.09

Growth of CdF2 / CaF2 Si(III) heterostructure with abrupt interfaces by using thin CaF2 buffer layer Reviewed

Applied surface science 104 105417 - 105417 1996.04

Study of band offsets in CdF<inf>2</inf>/CaF<inf>2</inf>/Si(111) heterostructures using x-ray photoelectron spectroscopy Reviewed

Izumi A., Hirai Y., Tsutsui K., Sokolov N.

Applied Physics Letters 67 1995.12

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

The valence band offsets at the heterointerfaces of the CdF2/CaF2/Si(111) structure grown by molecular beam epitaxy were evaluated using x-ray photoelectron spectroscopy, and the energy band diagram of this heterostructure was proposed. It was found that the interface of CdF2/CaF2has large conduction band offset: 2.9 eV, and the energy level of CdF2conduction band edge is below that of Si.© 1995 American Institute of Physics.

DOI： 10.1063/1.114595

Scopus

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MBE-growth and characterization of CdF<inf>2</inf> layers on Si(111) Reviewed

Novikov S., Faleev N., Izumi A., Khilko A., Sokolov N., Solov'ev S., Tsutsui K.

Microelectronic Engineering 28 ( 1-4 ) 213 - 216 1995.06

Language：English Publishing type：Research paper (scientific journal)

Epitaxial CdF2 layers and CdF2CaF2 superlattices have been grown on Si(111) substrates by means of molecular beam epitaxy. Double crystal X-ray diffractometry showed their high structural perfection. X-ray photoelectron spectroscopy revealed that CdF2 conduction band lies below that of Si by 0.8 eV. It was found from the cathodoluminescence measurements that Eu3+ ions in epitaxial layer occupy C4v sites. © 1995.

DOI： 10.1016/0167-9317(95)00046-B

Scopus

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