Faculty Profiles - IZUMI Akira

Papers - IZUMI Akira

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Improvement of deposition rate by sandblasting of tungsten wire in catalytic chemical vapor deposition Reviewed

Heya A., Niki T., Takano M., Doguchi Y., Yonezawa Y., Minamikawa T., Muroi S., Minami S., Izumi A., Masuda A., Umemoto H., Matsumura H.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 ( 4 A ) 1943 - 1944 2005.04

Moisture-resistive properties of SiN<inf>x</inf> films prepared by catalytic chemical vapor deposition below 100° C for flexible organic light-emitting diode displays Reviewed

Heya A., Niki T., Takano M., Yonezawa Y., Minamikawa T., Muroi S., Minami S., Ikari T., Izumi A., Masuda A., Umemoto H., Matsumura H.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 ( 4 A ) 1923 - 1927 2005.04

Language：English Publishing type：Research paper (scientific journal)

Silicon nitride (SiNx) films were deposited on Si and polycarbonate (PC) substrates at temperatures below 100°C by a catalytic chemical vapor deposition (Cat-CVD) method. By adding H2 to source gases, SiH4 and NH3, it was possible to prevent the deterioration of film qualities in low-temperature deposition /rocesses. H atoms produced from H2 are effective for increasing the film densities and improving passivation properties. The water vapor transmission rate of SiN x films on PC substrates deposited at 80°C was lower than 0.3g/m2day; the detection limit for a cup method. It is concluded that the Cat-CVD method with H2 dilution is a promising technique for preparing highly moisture-resistive SiNx films at low temperatures. © 2005 The Japan Society of Applied Physics.

DOI： 10.1143/JJAP.44.1923

Scopus

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Effect of atomic hydrogen on preparation of highly moisture-resistive SiN<inf>x</inf> films at low substrate temperatures Reviewed

Heya A., Niki T., Takano M., Yonezawa Y., Minamikawa T., Muroi S., Minami S., Izumi A., Masuda A., Umemoto H., Matsumura H.

Japanese Journal of Applied Physics, Part 2: Letters 43 ( 12 A ) 2004.12

Highly moisture-resistive SiN<inf>x</inf> films prepared by catalytic chemical vapor deposition Reviewed

Heya A., Niki T., Yonezawa Y., Minamikawa T., Muroi S., Izumi A., Masuda A., Umemoto H., Matsumura H.

Japanese Journal of Applied Physics, Part 2: Letters 43 ( 10 B ) 2004.10

有機液体原料を用いたHWCVD法によるSiCNエッチストッパーの作製 Reviewed

小田晃士, 和泉亮

電子情報通信学会技術研究報告. ED, 電子デバイス ( 一般社団法人電子情報通信学会 ) 104 ( 152 ) 27 - 30 2004.06

Language：Japanese Publishing type：Research paper (conference, symposium, etc.)

原料ガスに非爆発原料で有機液体原料であるヘキサメチルジシラザン(HMDS)を用いたホットワイヤーCVD法でSiCN膜を堆積した。HMDSのみでも堆積は可能であり、NH_3の添加とその流量によってSiCN膜の化学組成が制御できることが明らかとなった。

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110003175579

Effect of Atomic Hydrogen on Preparation of Highly Moisuture-Resistive SiNx Films at Low Substrate Temperatures Reviewed

Akira Heya,Toshikazu Niki,Masahiro Takano,Yasuto Yonezawa,Toshiharu Minamikawa,Susumu Muroi,Shigehira Minami,Akira Izumi,Atsushi Masuda,Hideki Matsumura

Jpn. J. Appl. Phys. 43 ( 12A ) L1546 - L1548 2004.04

Highly Moisuture-Resistive SiNx Films Prepared by Catalytic Chemical Vapor Deposition Reviewed

Akira Heya,Toshikazu Niki,Yasuto Yonezawa,Toshiharu Minamikawa,Susumu Muroi,Akira Izumi,Atsushi Masuda,Hironobu Umemoto,Hideki Matsumura

Jpn. J. Appl. Phys. 43 ( 10B ) L1362 - L1364 2004.04

Structural and electrical characterization of ultra-thin SiO2 films prepared by catalytic oxidation method Reviewed

Akira Izumi,Manabu Kudo,Hideki Matsumura

Solid State Phenomena 76-77 157 - 160 2004.04

Highly moisture-resistive SiN<inf>x</inf> films by catalytic chemical vapor deposition and their application to passivation and antireflection coating for crystalline Si solar cells Reviewed

Matsumura H., Kikkawa A., Tsutsumi T., Masuda A., Izumi A., Takahashi M., Ohtsuka H., Moschner J.

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion B 1147 - 1150 2003.12

Language：English Publishing type：Research paper (international conference proceedings)

SiNx films prepared by catalytic chemical vapor deposition (Cat-CVD) are applied to passivation and antireflection coating for crystalline Si solar cells. SiNx passivation by Cat-CVD with or without nitridation before SiNx deposition was examined. Both quite high carrier lifetime of 600 μs and low surface recombination velocity of 20-30 cm/s were obtained and these values were comparable to those obtained using remote plasma-enhanced chemical vapor deposition. Successive in-situ exposure of NH3-decomposed species after SiNx deposition also reduces the surface recombination velocity.

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=6344249000&origin=inward

Properties of silicon nitride films prepared by combination of catalytic-nitridation and catalytic-CVD Reviewed

Izumi A., Kikkawa A., Higashimine K., Matsumura H.

Materials Research Society Symposium - Proceedings 762 163 - 168 2003.12

Authorship：Lead author Language：English Publishing type：Research paper (international conference proceedings)

This paper reports about the interface of silicon nitride (SiNx) formed on Si(100) prepared by combination of catalytic-nitridation and catalytic-vapor deposition method in a catalytic chemical vapor deposition system. It is found that flat interface of SiNx/Si(100) is formed by inserting nitridalion layer before growing the SiNxfilms.

Scopus

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Coverage properties of silicon nitride film prepared by the Cat-CVD method Reviewed

Osono S., Uchiyama Y., Kitazoe M., Saito K., Hayama M., Masuda A., Izumi A., Matsumura H.

Thin Solid Films 430 ( 1-2 ) 165 - 169 2003.04

Language：English Publishing type：Research paper (international conference proceedings)

The coverage properties of silicon nitride (Si3N4) films prepared by the catalytic chemical vapor deposition (Cat-CVD) technique were systematically studied. By increasing the catalyzer-substrate distance, the coverage was improved from 46 to 67% on a 1.0-μm line and space pattern. The etching rate of Cat-CVD Si3N4 film measured using 16BHF solution was independent of the deposited position of the micro-patterns deposited, and was approximately 3 nm/min, one order of magnitude lower than that of plasma-enhanced CVD (PE-CVD) Si3N4 film. This means that Cat-CVD Si3N4 films are denser than PE-CVD Si3N4 films, and that the quality at the side wall is equivalent to that on the top surface. That is, Cat-CVD Si3N4 films show a passivation effect, which was excellent, even at the side wall of micro-patterns. These results suggest that Si3N4 films prepared by Cat-CVD are suitable for the passivation films in microelectronic devices having a step configuration, such as TFT-LCDs and ULSIs. © 2003 Elsevier Science B.V. All rights reserved.

DOI： 10.1016/S0040-6090(03)00100-7

Scopus

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Formation of low-resistivity poly-Si and SiN<inf>x</inf> films by Cat-CVD for ULSI application Reviewed

Morimoto R., Yokomori C., Kikkawa A., Izumi A., Matsumura H.

Thin Solid Films 430 ( 1-2 ) 230 - 235 2003.04

Coverage properties of silicon nitride film prepared by the Cat-CVD method Reviewed

S. Osono,Y. Uchiyama,M. Kitazoe,K. Saito,M. Hayama,A. Masuda,A. Izumi,H. Matsumura

430 165 - 169 2003.04

Electrical properties of silicon nitride films deposited by catalytic chemical vapor deposition on catalytically nitrided Si(100) Reviewed

Akiko Kikkawa,Rui Morimoto,Akira Izumi,Hideki Matsumura

Thin Solid Films 430 430 100 - 103 2003.04

Application of decomposed species generated by a heated catalyzer to ULSI fabrication processes Reviewed

Akira Izumi,Tsubasa Miki,Hideki Matsumura

Thin Solid Films 430 265 - 269 2003.04

Recent progress of Cat-CVD research in Japan - bridging between the first and second Cat-CVD conferences Reviewed

Hideki Matsumura,Hironobu Umemoto,Akira Izumi,Atsushi Masuda

Thin Solid Films 430 7 - 14 2003.04

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application Reviewed

Rui Morimoto,Chisato Yokomori,Akiko Kikkawa,Akira Izumi,Hideki Matsumura

Thin Solid Films 430 230 - 235 2003.04

Electrical properties of silicon nitride films deposited by catalytic chemical vapor deposition on catalytically nitrided Si(100) Reviewed

Akiko Kikkawa,Rui Morimoto,Akira Izumi,Hideki Matsumura

Thin Solid Films 430 100 - 103 2003.04

Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing Reviewed

Morimoto R., Izumi A., Masuda A., Matsumura H.

Rapid Thermal Processing for Future Semiconductor Devices 63 - 68 2003.04

Catalytic Chemical Vapor Deposition: Recent Development and Future Prospects Reviewed

Masuda A., Izumi A., Umemoto H., Matsumura H.

Shinku/Journal of the Vacuum Society of Japan 46 ( 2 ) 92 - 97 2003.01

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Papers - IZUMI Akira