Faculty Profiles - IZUMI Akira

Papers - IZUMI Akira

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Novel photoresist removal using atomic hydrogen generated by heated catalyzer Reviewed

Miki T., Izumi A., Matsumura H.

Solid State Phenomena 92 231 - 234 2003.01

Language：English Publishing type：Research paper (international conference proceedings)

Removal of various kinds of photoresists, using atomic hydrogen generated by a heated tungsten catalyzer, is investigated. It is found that the photoresist removal is possible for any photoresists. In addition, it is found that the photoresist implanted with doses as high as 1 × 1016 cm-2 can be removed completely. Moreover, the photoresist inside fine line and space patterns can be also removed.

Scopus

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Recent progress in industrial applications of Cat-CVD (hot-wire CVD) Reviewed

Masuda A., Izumi A., Umemoto H., Matsumura H.

Materials Research Society Symposium - Proceedings 715 111 - 122 2002.12

Language：English Publishing type：Research paper (international conference proceedings)

Rapid progresses are achieved in catalytic CVD (Cat-CVD), often called hot-wire CVD, in the past 3-years NEDO national project in Japan. Cat-CVD technology presents many advantages in thin-film formation processes; high-efficiency of gas use, large-area deposition, no ion bombardment and low-temperature deposition even below 200°C. All of the elemental techniques for the industrially applicable Cat-CVD apparatuses, such as the suppression of the metal contamination, the precise control of the substrate temperature, the life extension of the catalyzer, 1-m size uniform deposition and the chamber cleaning, have been completely developed. Sophisticatedly designed substrate holder with electrostatic chuck and showerhead equipped with catalyzers are both key technologies for these achievements. High reproducibility for film properties is also obtained by controlling the reaction between high-density radicals and chamber walls. Prototype mass-production apparatus for SiNx passivation films in GaAs devices has been already developed and this will be probably the first application of Cat-CVD in industry. These recent movements appear to promise the drastic revolution in semiconductor and flat-panel display industries by introducing Cat-CVD in very near future.

Scopus

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Low temperature formation of silicon nitride film: Combination of Catalytic-Nitridation and Catalytic-CVD Reviewed

Izumi A., Kikkawa A., Matsumura H.

Materials Research Society Symposium - Proceedings 715 491 - 496 2002.12

In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells Reviewed

Masuda A., Ishibashi Y., Uchida K., Kamesaki K., Izumi A., Matsumura H.

Solar Energy Materials and Solar Cells 74 ( 1-4 ) 373 - 377 2002.10

What is the difference between catalytic CVD and plasma-enhanced CVD? Gas-phase kinetics and film properties Reviewed

Masuda A., Izumi A., Umemoto H., Matsumura H.

Vacuum 66 ( 3-4 ) 293 - 297 2002.08

Language：English Publishing type：Research paper (scientific journal)

Differences between catalytic chemical vapor deposition (Cat-CVD), often called hot-wire chemical vapor deposition, and plasma-enhanced chemical vapor deposition (PECVD) are discussed from the viewpoints of gas-phase kinetics and film properties. Remarkable superiority of Cat-CVD over PECVD is high deposition rate due to high efficiency of gas use. One metre size large-area deposition is also realized using a newly developed gas showerhead equipped with the catalyzer. © 2002 Elsevier Science Ltd. All rights reserved.

DOI： 10.1016/S0042-207X(02)00133-1

Scopus

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Photoresist removal using atomic hydrogen generated by heated catalyzer Reviewed

Izumi A., Matsumura H.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 ( 7 A ) 4639 - 4641 2002.07

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

In this paper, a novel method for high-dose ion-implanted photoresist removal using atomic hydrogen generated by a heated tungsten catalyzer is proposed. It is found that photoresist doped as high as 1 × 1015 cm-2 can be removed completely. Quadruple mass spectroscopy detected hydrocarbon fragments during the atomic hydrogen treatment.

Scopus

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Low-resistivity Phosphorus-doped polycrystalline silicon thin films formed by catalytic chemical vapor deposition and successive rapid thermal annealing Reviewed

Rui Morimoto,Akira Izumi,Atsushi Masuda,Hideki Matsumura

Jpn. J. Appl. Phys. 41 501 - 506 2002.04

What is the differences between catalytic CVD and plasma-enhanced CVD? Gas-phase kinetics and film properties Reviewed

Atsushi Masuda,Akira Izumi,Hironobu Umemoto,Hideki Matsumura

Vacuum 66 293 - 297 2002.04

Cat-CVD技術の開発状況と応用展開 Reviewed

和泉亮,松村英樹

電子材料 41 61 - 65 2002.04

Photoresist removal using atomic hydrogen generated by heated catalyzer Reviewed

Akira Izumi,Hideki Matsumura

Jpn. J. Appl. Phys. 41 639 - 4641 2002.04

Effects of atomic hydrogen in gas phase on a-Si:H and poly-Si growth by catalytic CVD Reviewed

Umemoto H., Nozaki Y., Kitazoe M., Horii K., Ohara K., Morita D., Uchida K., Ishibashi Y., Komoda M., Kamesaki K., Izumi A., Masuda A., Matsumura H.

Journal of Non-Crystalline Solids 299-302 9 - 13 2002.04

Low-resistivity phosphorus-doped polycrystalline silicon thin films formed by catalytic chemical vapor deposition and successive rapid thermal annealing Reviewed

Morimoto R., Izumi A., Masuda A., Matsumura H.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 ( 2 A ) 501 - 506 2002.02

Cat-CVD as a new fabrication technology of semiconductor devices Reviewed

Matsumura H., Izumi A., Masuda A.

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD 2002-January 323 - 328 2002.01

Properties of large grain-size poly-Si films by catalytic chemical sputtering Reviewed

Masuda A., Kamesaki K., Izumi A., Matsumura H.

Materials Research Society Symposium - Proceedings 664 2001.12

Language：English Publishing type：Research paper (international conference proceedings)

Large grain-size polycrystalline Si (poly-Si) films are obtained on glass substrate by newly developed catalytic chemical sputtering method at low temperatures around 400 C. Si films are also epitaxially grown on (100) single-crystalline Si substrates. In the method Si films are deposited by the chemical transport of SiH4 species generated by the reaction between solid Si target and catalytically generated H atoms. Efficient deposition is realized using the remarkable difference in the etch rate depending on Si target temperatures. That is, SiH4 species are efficiently generated on cooled Si target by atomic-H etching and deposited on substrates with suppressed etching phenomena by heating. Full-width at half maximum of transverse-optical Raman signals originating from crystalline phase for the obtained poly-Si films is narrower than that for poly-Si prepared by excimer-laser annealing. It was noticeable that the grain size exceeds 1 μm for the films with a thickness of about 1 μm. Growth mode of poly-Si films especially in the initial stage is remarkably changed with a difference in the substrate material. It was found that formation of seed layer enhances the growth of poly-Si films on glass substrate.

Scopus

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Electrical and structural properties of catalytic-nitrided SiO<inf>2</inf> films Reviewed

Izumi A., Sato H., Matsumura H.

Materials Research Society Symposium - Proceedings 670 2001.12

Surface modification of silicon related materials using a catalytic CVD system for ULSI applications Reviewed

Thin Solid Films 395 260 - 265 2001.04

Cat-CVD法による薄膜形成とその応用展開 Reviewed

和泉亮,松村英樹

電子技術 43 37 - 41 2001.04

Catalytic chemical sputtering: A novel method for obtaining large-grain polycrystalline silicon Reviewed

Hideki Matsumura,Koji Kamesaki,Atsushi Masuda,Akira Izumi

Jpn. Appl. Phys. 40 L289 - L291 2001.04

Formation of high mosture and dopant diffusion resistivity silicon nitride films by catalytic-CVD method Reviewed

A. Izumi,H. Sato,H. Matsumura

J. Phys. IV France 11 Pr3 - 901 2001.04

Low-k silicon nitride film for copper interconnects process prepared by catalytic chemical vapor deposition method at low temperature Reviewed

H. Sato,A. Izumi,A. Masuda,H. Matsumura

Thin Solid Films 395 280 - 283 2001.04

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Papers - IZUMI Akira