Faculty Profiles - IZUMI Akira

Papers - IZUMI Akira

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MBE-grown and Characterization of CdF2 layers on Si(III) Reviewed

Microelectronic Engineering 28 213 - 213 1995.04

High-quality CdF2 layer growth on CaF2 / Si(III) Reviewed

Journal of Crystal Growth 150 1115 - 1115 1995.04

Characterization of molecular beam epitaxy grown CdF2 layers by x-ray diffraction and CaF2 : Sm photoluminescence probe Reviewed

Journal of vacuum Science and Technology A 13 ( 6 ) 2703 - 2703 1995.04

Study of band offsets in CdF2/CaF2/Si((]G0003[))heterostructures using X-ray photoelectron spectroscopy Reviewed

Applied Physics Letters 67 ( 19 ) 2792 - 2792 1995.04

High-quality CdF2 layer growth on CaF2/Si((]G0003[)) Reviewed

Journal of Crystal Growth 150 1115 - 1115 1995.04

High-quality CdF<inf>2</inf> layer growth on CaF<inf>2</inf>/Si(111) Reviewed

Izumi A., Tsutsui K., Sokolov N., Faleev N., Gastev S., Novikov S., Yakovlev N.

Journal of Crystal Growth 150 1115 - 1118 1995.01

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

Epitaxial CdF2 was grown on the coherent or relaxed CaF2/Si(111) by molecular beam epitaxy. The structures were characterized by reflection high-energy electron diffraction, Rutherford backscattering spectroscopy and double-crystal X-ray diffraction. It was shown that the crystallinity of the CdF2 layer grown on the CaF2/Si(111) structure, where the CaF2 was coherently grown on the Si, was quite good so as to obtain 51 arc sec of full width at half maximum of X-ray diffraction. © 1995, All rights reserved.

DOI： 10.1016/0022-0248(95)80112-P

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Surface modification of CaF<inf>2</inf> in atomic layer scale by electron beam exposure Reviewed

Hwang S., Izumi A., Tsutsui K., Furukawa S.

Applied Surface Science 82-83 ( C ) 523 - 527 1994.12

Language：English Publishing type：Research paper (scientific journal)

Surface modification of CaF2/Si(111) was studied for the purpose of 1 ML adsorption of group-V atoms on a fluoride surface which is applicable to heteroepitaxy of III-V compound semiconductors on CaF2. By using Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS), it was found that 1 ML of As and P were successfully adsorbed on a CaF2 surface, and that a 1 ML self-limiting adsorption of As for the electron beam exposure was realized. Also, we propose a model for the adsorption conditions depending on the substrate temperature during surface modification. © 1994.

DOI： 10.1016/0169-4332(94)90268-2

Scopus

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Molecular beam epitaxy of CdF<inf>2</inf> layers on CaF<inf>2</inf>(111) and Si(111) Reviewed

Sokolov N., Gastev S., Novikov S., Yakovlev N., Izumi A., Furukawa S.

Applied Physics Letters 64 ( 22 ) 2964 - 2966 1994.12

Language：English Publishing type：Research paper (scientific journal)

Cadmium fluoride single crystal layers have been grown on CaF 2/Si(111) or Si(111) substrates by molecular beam epitaxy. The structures are expected to have attractive electronic properties. The growth was monitored by reflections high energy electron diffraction (RHEED) techniques. A distinct (3×3) R30°superstructure has been observed on the CdF 2(111) surface at growth temperatures below 150°C. RHEED intensity oscillations indicate a two-dimensional growth mode of CdF 2.

DOI： 10.1063/1.111395

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0000359222&origin=inward

Surface modification of CaF<inf>2</inf> on Si(111) by low-energy electron beam for over growth of GaAs films Reviewed

Izumi A., Tsutsui K., Furukawa S.

Journal of Applied Physics 75 ( 5 ) 2307 - 2311 1994.12

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

Surface modifications of epitaxial CaF2 on Si(111) by low-energy electron beam, in order to get modified surfaces with reduced damage on which high quality GaAs films could be grown, were studied. By using x-ray photoelectron spectroscopy measurements, it was found that it is possible to modify the surface of CaF2(111) even though the energy of the electron beam was as low as ∼10 eV. The generation of defects in bulk CaF2 and the diffusion of As were found at an energy of 305 eV, whereas no such evidence of defect, but rather, a stable adsorption of As on the surface of CaF2, was observed at an energy of 40 eV.

DOI： 10.1063/1.356272

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=36449000685&origin=inward

Surface modification of CaF2 on Si((]G0003[))by low energy electron beam for over growth of GaAs films Reviewed

Journal of Applied Physics 75 ( 5 ) 2307 - 2307 1994.04

Molecular beam epitaxy of CdF2 layers on CaF2(III) and Si(III) Reviewed

Applied Physics Letters 64 ( 22 ) 2964 - 2964 1994.04

Surface modification of CaF2 in atomic layer scale by electron beam exposure Reviewed

Applied Surface Science 82 83523 - 83523 1994.04

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