Updated on 2022/09/22

写真a

 
OMURA Ichiro
 
Scopus Paper Info  
Total Paper Count: 0  Total Citation Count: 0  h-index: 14

Citation count denotes the number of citations in papers published for a particular year.

Affiliation
Graduate School of Life Science and Systems Engineering Department of Biological Functions Engineering
Job
Professor
E-mail
メールアドレス
Phone
+81-93-695-6037
Fax
+81-93-695-6037
External link

Research Interests

  • Power Semiconductor Devices

  • Power Electronics

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Power engineering  / パワーエレクトロニクス

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment  / power semiconductor devices

Undergraduate Education

  • 1985.03   Osaka University   Faculty of Science   Graduated   Japan

Post Graduate Education

  • 1987.03   Osaka University   Graduate School, Division of Science   Master's Course   Completed   Japan

Degree

  • Swiss Federal Institute of Technology  -  Doctor of Engineering   2001.08

Biography in Kyutech

  • 2017.04
     

    Kyushu Institute of Technology   Graduate School of Life Science and Systems Engineering   Department of Biological Functions Engineering   Professor  

  • 2008.04
    -
    2017.03
     

    Kyushu Institute of Technology   Faculty of Engineering   Department of Electrical Engineering and Electronics   Professor  

  • 2020.04
     

    Kyushu Institute of Technology  

Papers

  • Speed-Up Gate Pulse Method to Suppress Switching Loss and Surge Voltage for MOS Gate Power Device Reviewed International journal

    Hiroya Egashira, Hirotaka Oomori, Ichiro Omura

    The 34rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)   2022.05

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)

  • Hybrid GaN-SiC Power Switches for Optimum Switching, Conduction and Free-Wheeling Performance Reviewed International journal

    Battuvshin Bayarkhuu, Ravi Nath Tripathi, Ichiro Omura, Alberto Castellazzi

    The 34rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)   2022.05

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    Language:English   Publishing type:Research paper (international conference proceedings)

  • Dynamic Vgs-Id monitoring system for junction temperature estimation for MOS gate power semiconductors Reviewed International journal

    Yandagkhuu Bayarsaikhan, Ichiro Omura

    The 34rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)   2022.05

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)

  • Study of parasitic oscillations in trench IGBT during short-circuit type II based on signal flow graph model Reviewed International journal

    Hiroshi Kono and Ichiro Omura

    CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems   2022.03

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)

  • Self-turn-on-free criteria for MOS gate power device and circuit Reviewed

    Takanao Nishio and Ichiro Omura

    CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems   2022.03

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)

  • Feedback Controlled IPM Inverter with Single PCB Rogowski Coil Sensor Reviewed International journal

    Battuvshin Bayarkhuu, Bat-Otgon Bat-Ochir and Ichiro Omura

    CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems   2022.03

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)

  • Thermal grease pump-out visualizing system for power modules using 3D digital image correlation method Reviewed International journal

    Issei Manzen and Ichiro Omura

    CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems   2022.03

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)

  • Direct / indirect impinging air jet cooling for power devices and application to power electronics system Reviewed International journal

    Shunichiro Nakata, Ichiro Omura

    CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems   2022.03

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)

  • A testing method for evaluating shoot-through immunity of IGBTs in an inverter Reviewed International journal

    K. Hasegawa, S. Abe, M. Tsukuda, I. Omura, T. Ninomiya

    Microelectronics Reliability   2021.11

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: https://doi.org/10.1016/j.microrel.2021.114289

    DOI: https://doi.org/10.1016/j.microrel.2021.114289

  • Determination of Abnormality of IGBT Images Using VGG16 Reviewed International journal

    T. Ogawa, H. Lu, A. Watanabe, I. Omura and T. Kamiya

    Proc. of The 21th International Conference on Control, Automation and Systems (ICCAS 2021)   2021.10

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    Language:English   Publishing type:Research paper (international conference proceedings)

    DOI: https://doi.org/10.23919/ICCAS52745.2021.9650029

    DOI: https://doi.org/10.23919/ICCAS52745.2021.9650029

  • Multipurpose Strategy for Energy Storage System Based on Capital Asset Pricing Model With Ensemble Approach Reviewed International journal

    Kazufumi Yuasa, Miki Ueshima, Tadatoshi Babasaki, Ichiro Omura

    IEEE Access ( IEEE )   9   106725 - 106733   2021.07

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    DOI: https://doi.org/10.1109/ACCESS.2021.3101207

    DOI: https://doi.org/10.1109/ACCESS.2021.3101207

  • Improved DICM with an IR camera for Imaging of Strain and Temperature in Cross Section of TO packages Reviewed International journal

    Yoshiki Masuda, Akihiko Watanabe, Ichiro Omura

    Proc. of ISPSD 2021   2021.05

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)

    DOI: 10.23919/ISPSD50666.2021.9452304

  • Benchmarking of Digital Gate Driven IGBTs: New Eoff-Vsurge Trade-off Approach Reviewed International journal

    Kouji Harasaki, Masanori Tsukuda and Ichiro Omura

    Proc. of ISPSD 2021   2021.05

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    DOI: 10.23919/ISPSD50666.2021.9452197

  • DUT Temperature Coefficient and Power Cycles to Failure Reviewed International journal

    Yuma Kawauchi, Kenji Akimoto, Akihiko Watanabe and Ichiro Omura

    Proc. of ISPSD 2021   2021.05

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    DOI: 10.23919/ISPSD50666.2021.9452298

  • Altitude Dependent Failure Rate Calculation for High Power Semiconductor Devices in Aviation Electronics Reviewed International journal

    Srikanth Gollapudi and Ichiro Omura

    Japanese Journal of Applied Physics   2021.04

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.35848/1347-4065/abebc0

  • Study of parasitic oscillation of a multi-chip SiC MOSFET circuit based on a signal flow graph model by TCAD simulation Reviewed International journal

    Hiroshi Kono, Ichiro Omura

    Solid-State Electronics ( Elsevier )   177   2021.03

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1016/j.sse.2020.107884

  • Multipurpose strategy for energy storage system based on capital asset pricing model with ensemble approach Reviewed International journal

    Yuasa K., Ueshima M., Babasaki T., Omura I.

    Yuasa K., Ueshima M., Babasaki T., Omura I.   2021.01

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    DOI: 10.1109/ACCESS.2021.3101207

  • 3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology Reviewed International journal

    Saraya T., Itou K., Takakura T., Fukui M., Suzuki S., Takeuchi K., Tsukuda M., Satoh K., Matsudai T., Kakushima K., Hoshii T., Tsutsui K., Iwai H., Ogura A., Saito W., Nishizawa S., Omura I., Ohashi H., Hiramoto T.

    Technical Digest - International Electron Devices Meeting, IEDM   2020.12

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    DOI: 10.1109/IEDM13553.2020.9371909

  • Effect of cell size reduction on the threshold voltage of UMOSFETs Reviewed

    Baba Y., Omura I.

    Microelectronics Reliability   114   2020.11

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    UMOSFET on-resistances have been dramatically improved in recent decades with the miniaturization of cell size by innovations in the fabrication process. However, with miniaturization, failure in the gate oxide, large deviations in the threshold voltage and reductions in avalanche capability have emerged as design problems for mass production. In particular, threshold voltage increase have appeared with the introduction of a trench source contact. The source contact trench and MOS gate trench are fabricated next to each other with a narrow silicon mesa region, and the voltage increase appear when the silicon mesa width becomes narrower than 80 nm. So far, it appears that the P+ layer dopant in the contact sidewall diffuses toward the gate oxide and the channel doping increases, which causes the increase in the threshold voltage Vth. We analyzed the distribution of Vth at the wafer level/shot level and found for the first time that the increase in Vth is caused by the punch-through effect from the channel depletion layer to the contact P+ layer, and thus, sidewall dopant diffusion will not affect the increase in Vth. We established an analytical model for the increase in Vth. Our model showed that for the field plate type UMOSFET with a shorter gate contact length, not only is there a increase in Vth, but also it is difficult to control Vth using the conventional channel implantation method.

    DOI: 10.1016/j.microrel.2020.113747

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  • Shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction Reviewed

    Hasegawa K., Abe S., Tsukuda M., Omura I., Ninomiya T.

    Microelectronics Reliability   114   2020.11

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    Attention has been paid to the next-generation IGBT toward CMOS compatible wafer processes, which can be driven by a 5-V logic level due to its low threshold gate voltage. This low threshold voltage makes the so-called shoot-through fault severer. Even though the switching speed of the IGBT is intentionally reduced, the shoot-through fault can happen. This paper presents shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction. Theoretical analysis reveals the criterion of the gate impedance with taking parasitic parameters of the inverter into account.

    DOI: 10.1016/j.microrel.2020.113765

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  • Identification of normal and abnormal from ultrasound images of power devices using VGG16 Reviewed

    Ogawa T., Lu H., Watanabe A., Omura I., Kamiya T.

    International Conference on Control, Automation and Systems   2020-October   415 - 418   2020.10

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    Power devices are semiconductor devices that handle high voltages and large currents, which are used in electric vehicles, televisions, and trains. Therefore, high reliability and safety are required, and to ensure this, power cycle tests are performed to analyze the breakdown process. Conventional tests are often difficult to analyze due to the influence of sparks generated during the test. Therefore, new tests are being developed by adding ultrasound to conventional methods. The new technology is capable of continuously recording structural changes inside the device during testing, which is expected to make testing much easier than conventional testing. However, the new technology still has some challenges. The main problems are the lack of a method for analyzing large amounts of image data and the extraction of small changes in image features that are difficult to distinguish with the human eye, and the establishment of such a system is required. In this paper, we use deep learning for image classification of the obtained ultrasound images. We propose a new network model with the addition of Batch normalization and Global average pooling to VGG16, which is a pre-trained model. In the experiment, accuracy=98.29%, TPR=98.96% and FPR=7.43% classification accuracy was obtained.

    DOI: 10.23919/ICCAS50221.2020.9268275

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  • Altitude Dependent Failure Rate Calculation for High Power Semiconductor Devices in Aviation Electronics Reviewed International journal

    Srikanth Gollapudi, Ichiro Omura

    International Conference on Solid State Devices and Materials (SSDM2020)   2020.09

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    日本   富山(新型コロナ感染拡大に伴い、現地開催中止)   2020.09.27  -  2020.09.30

  • 太陽光併設蓄電システムの自家消費型長期運用戦略に関する一検討 Reviewed

    湯淺一史,植嶋美喜,馬場﨑忠利,大村一郎

    電子情報通信学会論文誌 B ( 電子情報通信学会 )   J103-B ( 9 )   382 - 390   2020.09

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    Language:Japanese   Publishing type:Research paper (scientific journal)

    DOI: 10.14923/transcomj.2020JBP3011

  • Active Voltage Balancing for Series Connected IGBT System using Gate Delay Compensation Reviewed

    Ravi Nath Tripathi, Masanori Tsukuda, Ichiro Omura

    2019 International Conference on Solid State Devices and Materials   725 - 726   PS-4-02   2020.09

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)

  • 13kV UHV-IGBT: Feasibility Study Reviewed

    Ito A., Omura I.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   2020-September   50 - 53   2020.09

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    Increasing the rated voltage of IGBTs is indispensable for realizing future energy transmission systems such as gigawatt-class UHVDC and high-power motor drives with reduced number of series connection or simplified circuit topology. The voltage of IGBTs, however, has stagnated for 20 years at 6.5kV because of several issues. In this paper, we investigated the feasibility of a 13kV ultra-high voltage IGBT with twice the breakdown voltage of conventional IGBTs using TCAD simulations. As a result, the use of a double gate structure proved to be practical under DC bus voltage of 6.6 kV and a switching frequency of 150 Hz.

    DOI: 10.1109/ISPSD46842.2020.9170034

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  • V-I Curve Based Condition Monitoring System for Power Devices Reviewed

    Tsukuda M., Guan L., Watanabe K., Yamaguchi H., Takao K., Omura I.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   2020-September   82 - 85   2020.09

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    According to gaining importance of power electronics systems in the society, reliability issues of power semiconductor devices are the constrains on availability of the system operations. Regular interval based maintenance for higher availability, on the other hand, increases operation cost since the lifetime of power devices have a large deviation with production lots or conditions which they are used. Condition based maintenance (CBM) of power semiconductor devices will be a promising solution for both the availability and cost of power electronics system maintenance. In this study, a high signal resolution condition monitoring system board has been demonstrated. The system monitors real time V-I curve for both switching device and diode with case temperature and the data is stored on board memory and can be monitored on-line. The board was mounted on the gate driver board being supplied power from the gate driver board and demonstrated on a commercial 60kVA inverter.

    DOI: 10.1109/ISPSD46842.2020.9170059

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  • Dynamic Current Balancing of Parallel Connected IGBT Devices using PCB Sensors for Integration in Power Modules Reviewed International journal

    Ravi Nath Tripathi; Masanori Tsukuda; Ichiro Omura

    11th International Conference on Integrated Power Electronics Systems (CIPS2020) ( VDE )   2020.05

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  • Simultaneous Imaging of Strain and Temperature using Single IR Camera Reviewed International journal

    Yoshiki Masuda, Akihiko Watanabe and Ichiro Omura

    11th International Conference on Integrated Power Electronics Systems (CIPS2020) ( VDE )   2020.05

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  • IGBT current filamentation observation by segmented collector sensing under UIS condition Reviewed International journal

    Seiya Matsuura, Masanori Tsukuda, Ichiro Omura

    11th International Conference on Integrated Power Electronics Systems (CIPS2020) ( VDE )   2020.05

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  • EMI Imaging System Using Double-pulse-compose-method Reviewed International journal

    K. Matsuo, M. Tsukuda and I. Omura

    11th International Conference on Integrated Power Electronics Systems (CIPS2020) ( VDE )   2020.05

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  • Digital Gate Drive Control Method for Active Voltage Balancing of Series-connected IGBT Devices Reviewed International journal

    R. N. Tripathi, T. Arimoto, M. Tsukuda and I. Omura

    11th International Conference on Integrated Power Electronics Systems (CIPS2020) ( VDE )   2020.05

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  • Detecting Three-Phase Power Inverter Output Currents By A Single PCB Current Sensor Reviewed International journal

    B. Bat-Ochir, B. Bayarkhuu, M. Tsukuda, B. Dugarjav and I. Omura

    11th International Conference on Integrated Power Electronics Systems (CIPS2020) ( VDE )   2020.05

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  • Mechanism Clarification of Switching Loss and Surge Voltage / Current Reduction with Active Gate Drive for System Reliability Improvement Reviewed International journal

    Seiya Abe, Yusuke Tokita, Masanori Tsukuda, Ichiro Omura

    Journal of the Institute of Industrial Applications Engineers ( IIAE )   8 ( 2 )   50 - 55   2020.04

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.12792/jiiae.8.50

  • Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs Reviewed

    Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Kuniyuki, Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Shin-ichi Nishizawa, Ichiro Omura and Toshiro Hiramoto

    JJAP   2020.04

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.35848/1347-4065/ab7414

  • Numerical study on the suppression of 4H-SiC PiN diodes forward bias degradation due to substrate basal plane dislocations Reviewed

    Satoshi Torimi, Yoshiki Obiyama, Masanori Tsukuda, Ichiro Omura

    Solid State Electronics   166   107770   2020.04

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    DOI: 10.1016/j.sse.2020.107770

  • Stop-and-Go Gate Drive Minimizing Test Cost to Find Optimum Gate Driving Vectors in Digital Gate Drivers Reviewed

    Sai T., Miyazaki K., Obara H., Mannen T., Wada K., Omura I., Sakurai T., Takamiya M.

    Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC   2020-March   3096 - 3101   2020.03

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    An active gate driving is effective to solve the trade-off between the switching loss and the current/voltage overshoot of power transistors. The test cost in the conventional digital gate drivers with four variables, however, is high, because more than 2000 measurements are required to find an optimum gate driving vector out of 64 (~1.7 x 10 ) combinations [1]. To minimize the test cost, a stop-and-go gate drive with only one variable is proposed. The switching loss and the current/voltage overshoot in turn-on/off state of IGBT of the conventional gate drive [1] and the proposed stop-and-go gate drive are measured by using a 6-bit programmable digital gate driver IC across nine conditions including different load currents (20 A, 50 A, and 80 A) and temperatures (25 °C, 75 °C, and 125 °C), and they are compared. The performance degradation of the switching loss and the current/voltage overshoot in the proposed stop-and-go gate drive over the conventional gate drive with four variables [1] is less than 8 % and 25 % across the nine conditions in turn-on/off state respectively. 4 7

    DOI: 10.1109/APEC39645.2020.9124356

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  • Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs Reviewed

    Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, and Toshiro Hiramoto

    IEEE Transactions on Semiconductor Manufacturing   2020.02

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    DOI: 10.1109/TSM.2020.2972369

  • IGBT current filamentation observation by segmented collector sensing under UIS condition Reviewed

    Matsuura S., Tsukuda M., Omura I.

    CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems   559 - 564   2020.01

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    Current filamentation during the avalanche period of insulated-gate bipolar transistors (IGBTs) has been investigated using various approaches including TCAD simulations and temperature distribution measurements, since the phenomena can be an origin of chip current capability lowering with the parasitic thyristor latching-up due to the strongly localized current. This paper reports, for the first time, the current filamentation is directly measured as collector currents of segmented metallization areas of an IGBT chip. The experimental results show that the filament moves across the segmented areas with couple of micro second as the transition time and the transitions are not identical for the repeated tests even the circuit condition is the same.

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  • Dynamic current balancing of parallel connected IGBT devices using PCB sensor for integration in power modules Reviewed

    Tripathi R.N., Tsukuda M., Omura I.

    CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems   101 - 105   2020.01

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    Dynamic current balancing is a crucial factor for parallel connected devices. It has to be considered as a prominent issue concerning the high reliability and lifetime of the power module as well as the power electronic converter system. This paper presents, dynamic current balancing among the parallel-connected discrete IGBT devices using a tiny PCB sensor that can be integrated inside a power module for system miniaturization. The output of the tiny PCB sensor is used for current peak detection to perform gate delay compensation through feedback control. Moreover, the currents are also measured using Pearson current probe for authentication of measurement and system performance using PCB sensors.

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  • Digital gate drive control method for active voltage balancing of series-connected IGBT devices Reviewed

    Tripathi R.N., Arimoto T., Tsukuda M., Omura I.

    CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems   269 - 273   2020.01

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    High voltage power generation and conversion are essential considering reduced system losses, consequently, lead to better power system efficiency. Series-connected power devices are used to address and satisfy the high voltage requirement of the system. However, unbalanced voltage stress distribution among the series-connected power devices is a vital concern considering the ageing of the devices, safe-operating-area (SOA) and system reliability. This paper presents, a digital gate drive control (DGDC) method for voltage balancing of series-connected IGBT devices. The proposed method dynamically controls the gate voltage to optimize the overshoot voltage as well as the voltage-stress distribution. The DGDC method is implemented for a three series-connected IGBT system to authenticate the performance.

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  • Detecting three-phase power inverter output currents by a single PCB current sensor Reviewed

    Bat-Ochir B.O., Bayarkhuu B., Tsukuda M., Dugarjav B., Omura I.

    CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems   106 - 109   2020.01

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    Measuring the current of a power conversion system is imperative. So, we have developed a new method of measuring a three-phase inverter’s currents of all loads with a single current sensor. We successfully tested this method on a computer simulation and an experimental setup. Which showed that the method can be integrated into power inverters. We proposed an inexpensive analog circuit suitable for capturing current information from a tiny PCB Rogowski coil. It measures the current of the power inverter’s DC supply line and resynthesizes all load currents separately. This way it will reduce the size and cost of a power conversion system’s current measuring devices.

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  • Robust Gate Driving Vectors to Load Current and Temperature Variations for Digital Gate Drivers Reviewed

    Toru Sai, Koutaro Miyazaki, Hidemine Obara, Tomoyuki Mannen, Keiji Wada, Ichiro Omura, Takayasu Sakurai and Makoto Takamiya

    4th IEEE International Future Energy Electronics Conference (IFEEC 2019), Special Session   2019.11

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  • Examination of correction method of long-term solar radiation forecasts of numerical weather prediction Reviewed

    Ueshima M., Babasaki T., Yuasa K., Omura I.

    8th International Conference on Renewable Energy Research and Applications, ICRERA 2019   113 - 117   2019.11

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    To optimize operation plans for storage batteries with solar power systems, it is necessary to predict solar radiation for up to one week with high accuracy. However, it is known that the further a prediction system forecasts into the future, the lower the prediction accuracy. In this paper, we report on the results of testing a method for correcting the solar radiation prediction value statistically from a numerical weather prediction model by using the tendency of past error occurrence for predicting seven days ahead.

    DOI: 10.1109/ICRERA47325.2019.8997070

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  • Power energy cost reduction effects by applying optimized long-term storage battery operation strategy Reviewed

    Yuasa K., Omura I., Ueshima M., Babasaki T.

    8th International Conference on Renewable Energy Research and Applications, ICRERA 2019   107 - 112   2019.11

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    In this paper, we propose an optimized storage battery operation strategy by considering the long-term variability of the net load with photovoltaics. We derive the power energy cost reduction effects from the proposed strategy that was applied by numerical analysis. From the numerical analysis results, we report that the strategy is more advantageous than conventional strategies.

    DOI: 10.1109/ICRERA47325.2019.8996953

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  • Optimized Storage Battery Operation Strategy by Considering Long-term Variabilitty of a Net Load with Photovoltaics Reviewed

    Yuasa K., Ueshima M., Babasaki T., Omura I.

    2019 IEEE 4th International Future Energy Electronics Conference, IFEEC 2019   2019.11

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    In this paper, we propose an optimized storage battery operation strategy by considering the long-term variability of net loads with photovoltaics. We derive the power energy cost reduction effects in the case of applying the proposed strategy under storage parity conditions by numerical analysis. From the results, we report that the proposed strategy is more advantageous than conventional methods.

    DOI: 10.1109/IFEEC47410.2019.9014973

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  • Switching of 3300v scaled igbt by 5v gate drive Reviewed

    Hiramoto T., Satoh K., Matsudai T., Saito W., Kakushima K., Hoshii T., Furukawa K., Watanabe M., Shigyo N., Wakabayashi H., Tsutsui K., Sarava T., Iwai H., Ogura A., Nishizawa S., Omura I., Ohash H., Itou K., Takakura T., Fukui M., Suzuki S., Takeuchi K., Tsukuda M., Numasawa Y.

    Proceedings of International Conference on ASIC   2019.10

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    In this work, the switching of 3300V IGBTs by 5V gate drive voltage has been successfully demonstrated for the first time. IGBT was designed based on a scaling principle. Comparing with conventional 15V-driven non-scaled IGBTs, the tum-off tail current of the scaled devices significantly decreased. The improvement of E-{\mathrm{off}} vs V-{\mathrm{cesat}} relationship by 35% was achieved.

    DOI: 10.1109/ASICON47005.2019.8983633

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  • Peak Minimisation based Gate Delay Compensation for Active Current Balancing of Parallel IGBT System Reviewed

    Ravi Nath Tripathi, Masanori Tsukuda, Ichiro Omura

    Microelectronics Reliability   101-101   113426   2019.09

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    DOI: 10.1016/j.microrel.2019.113426

  • Infrared image correlation for thermal stress analysis of power devices Reviewed

    Akihiko Watanabe, Yoshiki Masuda and Ichiro Omura

    Microelectronics Reliability   101-101   113414   2019.09

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    DOI: 10.1016/j.microrel.2019.113414

  • Development of fast short-circuit protection system for advanced IGBT Reviewed

    M. Ichiki, T. Arimoto, S. Abe, M. Tsukuda, I. Omura

    Microelectronics Reliability   101-101   113408   2019.09

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    DOI: 10.1016/j.microrel.2019.113408

  • Convolutional neural network (CNNs) based image diagnosis for failure analysis of power devices Reviewed

    Akihiko Watanabe, Naoto Hirose, Hyoungseop Kim and Ichiro Omura

    Microelectronics Reliability   101-101   113399   2019.09

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    DOI: 10.1016/j.microrel.2019.113399

  • Calculation of single event burnout failure rate for high voltage devices under satellite orbit without fitting parameters Reviewed

    Sudo, M. Nagamatsu, T. Tsukuda, M. Omura, I.

    Microelectronics Reliability   101-101   113396   2019.09

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    DOI: 10.1016/j.microrel.2019.07.001

  • Evaluation of Carrier Recombination Lifetime in Silicon Epitaxial Layer by Open Circuit Voltage Decay Method Reviewed

    S. Sasaki, N. Mitsugi, S. Samata, W. Manabe, M. Tsukuda, H. Y.-Kaneta, I. Omura

    2019 International Conference on Solid State Devices and Materials   2019.09

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  • Numerical Study of 4H-SiC PiN Diode to Enable Forward Bias Degradation Prediction Considering BPD-TED Conversion Position in the SiC Epitaxial Wafer Reviewed

    Satoshi Torimi, Yoshiki Obiyama, Masanori Tsukuda and Ichiro Omura

    2019 International Conference on Solid State Devices and Materials   2019.09

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  • Active Voltage Balancing for Series Connected IGBT System using Gate Delay Control Reviewed

    Ravi Nath Tripathi, Kouji Harasaki, Masanori Tsukuda, Ichiro Omura

    2019 International Conference on Solid State Devices and Materials   2019.09

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  • Load current and temperature dependent optimization of active gate driving vectors Reviewed

    Sai T., Miyazaki K., Obara H., Mannen T., Wada K., Omura I., Takamiya M., Sakurai T.

    2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019   3292 - 3297   2019.09

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    A load current and temperature dependent optimization of the active gate driving waveforms is proposed to always solve the trade-off between the switching loss and the current/voltage overshoot of power transistors under load current and temperature variations. The switching loss and the current/voltage overshoot in turn-on/off state of IGBT using optimized gate driving vectors obtained by an automatic optimization are measured by using a 6-bit programmable digital gate driver IC across nine conditions including different load currents (20 A, 50 A, and 80 A) and temperatures (25 °C, 75 °C, and 125 °C). They are compared with those with conventional single-step gate driving waveforms using an object function as a function of the normalized loss and overshoot. When the optimized gate driving vector at a typical operation point of (50 A, 25 °C) is reused in other eight conditions, the object functions at eight conditions are better or worse than those of the conventional single-step driving. In contrast, when the gate driving vector is optimized at each condition, the object functions at all eight conditions are better than those of the conventional single-step driving in both turn-on and turn-off states, which clarifies the necessity of the proposed optimization. To implement the proposed optimization, a lookup table based active gate controller, which provides a preset optimum driving vector depending on the load current and the temperature, will be effective.

    DOI: 10.1109/ECCE.2019.8913103

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  • Output-Current Measurement of a PWM Inverter with a Tiny PCB Rogowski Sensor Integrated into an IGBT Module Reviewed

    Hasegawa K., Sho S., Tsukuda M., Omura I., Ichiki M., Kato T.

    2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019   5707 - 5711   2019.09

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    Inverters used in motor-drive and grid-connected applications usually employ current sensors at the output terminal because they have to control the output current. Existing current sensors like the Hall sensor and the current transformer are a constraint to reduce the volume and cost of the inverter. This paper proposes an output-current measurement method of a PWM inverter using a tiny PCB sensor that is based on the so-called Rogowski coil and can be integrated into an IGBT module. The method utilizes the switching current of the low-side switch for reproducing the output current, which allows using the PCB sensor because the switching current consists of high-frequency components. The method uses a single PCB sensor per leg and takes the polarity of the output current into account. Experimental results using a half-bridge sinusoidal PWM inverter verify that the proposed method measures the output current including its fundamental frequency component, switching ripple one, and polarity.

    DOI: 10.1109/ECCE.2019.8912662

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  • 3300V Scaled IGBTs Driven by 5V Gate Voltage Reviewed

    T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Sato, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohashi, and T. Hiramoto

    The 31st IEEE International Symposium on Power Semiconductor Devices and ICs   2019.05

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    DOI: 10.1109/ISPSD.2019.8757626

  • A Condition-Monitoring Method of DC-Link Capacitors Used in a High-Power Three-Phase PWM Inverter with an Evaluation Circuit Reviewed

    K. Hasegawa, S. Nishizawa, and I. Omura

    IEEJ Journal of Industry Applications   8 ( 3 )   480 - 487   2019.05

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    DOI: 10.1541/ieejjia.8.480

  • Mutual inductance influence to switching speed and TDR measurements for separating self- and mutual inductances in the package Reviewed

    H. Iida, K. Hasegawa, I. Omura

    The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)   503 - 506   2019.05

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    DOI: 10.1109/ISPSD.2019.8757658

  • Analog Basis, Low-Cost Inverter Output Current Sensing with Tiny PCB Coil Implemented inside IPM Reviewed

    Battuvshin Bayarkhuu, Bat-Otgon Bat-Ochir, Kazunori Hasegawa, Masanori Tsukuda, Bayasgalan Dugarjav, Ichiro Omura

    The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)   251 - 254   2019.05

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    DOI: 10.1109/ISPSD.2019.8757580

  • Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT Reviewed

    Tsukuda Masanori, Sudo Masaki, Hasegawa Kazunori, Abe Seiya, Saraya Takuya, Takakura Toshihiko, Fukui Munetoshi, Itou Kazuo, Suzuki Shinichi, Takeuchi Kiyoshi, Ninomiya Tamotsu, Hiramoto Toshiro, Omura Ichiro

    The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)   339 - 342   2019.05

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    DOI: 10.1109/ISPSD.2019.8757665

  • Gate Waveform Optimization in Emergency Turn-Off of IGBT Using Digital Gate Driver Reviewed

    Miyazaki K., Wada K., Omura I., Takamiya M., Sakurai T.

    ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia   3292 - 3296   2019.05

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    IGBTs need to be immediately turned off when a short circuit occurs [1]. This paper discusses the optimized gate control in this emergency turn-off process. The optimized gate waveform minimizes the energy loss, hence the heat generation, while keeping the maximum collector-emitter voltage overshoot within a certain allowable value. The optimized waveform is found by theoretical analysis and is verified by measurements for the first time. Analytical expressions are derived for the optimized control, which explains well the experimental results. The optimized gate waveform is realized only by a digital gate driver (DGD)whose output drivability is programmable over 64 strength levels. The DGD decreases the energy loss by 22 % compared with the conventional resistor gate driver [2]-[4].

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  • Stop-and-Go Gate Drive Minimizing Test Cost to Find Optimum Gate Driving Vectors in Digital Gate Drivers Reviewed International journal

    Toru Sai, Koutaro Miyazaki, Hidemine Obara, Tomoyuki Mannen, Keiji Wada, Ichiro Omura, Takayasu Sakurai and Makoto Takamiya

    IEEE Applied Power Electronics Conference and Exposition (APEC)   2019.03

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  • Load Current and Temperature Dependent Optimization of Active Gate Driving Vectors Reviewed International journal

    Toru Sai, Koutaro Miyazaki, Hidemine Obara, Tomoyuki Mannen, Keiji Wada, Ichiro Omura, Makoto Takamiya, Takayasu Sakurai

    The Eleventh Annual Energy Conversion Congress and Exposition (ECCE)   2019.03

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  • Vertical Bipolar Transistor Test Structure for Measuring Minority Carrier Lifetime in IGBTs Reviewed

    K. Takeuchi, M. Fukui, T. Saraya, K. Itou, T. Takakura, S. Suzuki, Y. Numasawa, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, I. Muneta, H. Wakabayashi, M. Tsukuda, A. Ogura, K. Tsutsui, H. Iwai, S. Nishizawa, I. Omura6, H. Ohashi, and T. Hiramoto

    ICMTS2019(32nd IEEE International Conference on Microelectronic Test Structures)   2019.03

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    DOI: 10.1109/ICMTS.2019.8730922

  • Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss Reviewed

    Saraya T., Itou K., Takakura T., Fukui M., Suzuki S., Takeuchi K., Tsukuda M., Numasawa Y., Satoh K., Matsudai T., Saito W., Kakushima K., Hoshii T., Furukawa K., Watanabe M., Shigyo N., Tsutsui K., Iwai H., Ogura A., Nishizawa S., Omura I., Ohashi H., Hiramoto T.

    Technical Digest - International Electron Devices Meeting, IEDM   2018-December   8.4.1 - 8.4.4   2019.01

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    Functional trench-gated 1200V-10A class Si-IGBTs, designed based on a three dimensional (3D) scaling concept, were fabricated, and 5V gate voltage switching operation has been demonstrated for the first time. 33% reduction of turn-off loss and 100mV improvement of on-state voltage were achieved, while keeping 1.2kV forward blocking voltage.

    DOI: 10.1109/IEDM.2018.8614491

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  • Optimal double sided gate control of IGBT for lower turn-off loss and surge voltage suppression Reviewed

    Harada S., Tsukuda M., Omura I.

    CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems   2019.01

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    The current density of power semiconductor devices continues to increase and, carrier injection has been enhanced by several methods even though turn-off loss tends to be increased. In order to address this problem, we propose a double sided gate IGBT and optimal gate control method for lower turn-off loss. TCAD simulation numerically shows that the proposed IGBT successfully decreases turn-off loss. Furthermore, the turn-off loss is further decreased with optimal control of the double sided gate without surge voltage increase. In addition, we consider the effects of stray inductance on the performance of double sided gate IGBT.

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  • Magnetic flux signal simulation with 16-channel sensor array to specify accurate IGBT current distribution Reviewed

    Tsukuda M., Matsuo K., Tomonaga H., Okoda S., Noda R., Tashiro K., Omura I.

    CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems   2019.01

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    Current crowding of IGBT and power diodes in a chip or among chips is a barrier to the realization of highly-reliable power modules and power electronics systems. Current crowding occurs because of stray inductance imbalance, difference of chip characteristics and temperature imbalance among chips. Although current crowding among IGBT or power diode chips has been analyzed by numerical simulation, no sensor with sufficiently high special resolution and fast measurement time has yet been developed. Therefore, we developed a 16-channel sensor array and demonstrated IGBT current distribution imaging. By using the developed simulation method for the sensor array, the accuracy of the magnetic flux signals was confirmed. In future work, we will apply the simulation method to specify the IGBT current distribution corresponding to the structure of bonding wire and other wiring.

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  • Application-specific micro Rogowski coil for power modules -Design tool, novel coil pattern and demonstration- Reviewed

    Koga M., Tsukuda M., Nakashima K., Omura I.

    CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems   2019.01

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    We developed a printed circuit board “Rogowski coil” to improve the reliability of power modules and packages. For the design, we used a new tool for sensitivity and adopted a fishbone coil pattern to realize design sensitivity. The developed coil demonstrates flat sensitivity that is as good as that of commercialized current probes/sensors because the proposed coil pattern successfully cancels noise from an outside current with flat signal sensitivity by an inside current.

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  • Calorimetric Power-Loss Measurement of a High-Power Film Capacitor with Actual Ripple Current Generated by a PWM Inverter Reviewed International journal

    Kazunori Hasegawa, Ichiro Omura

    ECCE2018 (IEEE ENERGY CONVERSION CONGRESS & EXPO)   2018.09

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    DOI: 10.1109/ECCE.2018.8557709

  • Envelop Tracking Based Embedded Current Measurement for Monitoring of IGBT and Power Converter System Reviewed International journal

    Bat-Otgon Bat-Ochir, Battuvshin Bayarkhuu, Kazunori Hasegawa, Masanori Tsukuda, Bayasgalan Dugarjav, Ichiro Omura

    Microelectronics Reliability   ( 89-90 )   500 - 504   2018.09

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    DOI: 10.1016/j.microrel.2018.06.028

  • A fully digital feedback control of gate driver for current balancing of parallel connected power devices Reviewed International journal

    R.N. Tripathi, M. Tsukuda, I. Omura

    Microelectronics Reliability   ( 89-90 )   505 - 509   2018.09

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    DOI: 10.1016/j.microrel.2018.06.030

  • Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena Reviewed International journal

    M. Tsukuda, S. Abe, K. Hasegawa, T. Ninomiya, I. Omura

    Microelectronics Reliability   ( 89-90 )   482 - 485   2018.09

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    DOI: 10.1016/j.microrel.2018.06.026

  • A power cycling degradation inspector of power semiconductor devices Reviewed International journal

    A. Watanabe, I. Omura

    Microelectronics Reliability   ( 89-90 )   458 - 461   2018.09

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    DOI: 10.1016/j.microrel.2018.06.071

  • ESR and capacitance monitoring of a dc-link capacitor used in a three-phase PWM inverter with a front-end diode rectifier Reviewed International journal

    K. Hasegawa, S. Nishizawa, I. Omura

    Microelectronics Reliability   ( 89-90 )   433 - 437   2018.09

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    DOI: 10.1016/j.microrel.2018.07.023

  • Current Imbalance Monitoring in SiC-MOSFET under Unclamped Inductive Switching by Tiny PCB Rogowski Coil Reviewed International journal

    Takaaki Arimoto, Masanori Tsukuda, Seiya Matsuura, Ichiro Omura

    14th International Seminar on Power Semiconductors   2018.08

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    Czech   Prague   2018.08.29  -  2018.08.31

  • An Evaluation Circuit for DC-Link Capacitors Used in a High-Power Three-Phase Inverter with Condition Monitoring Reviewed

    Hasegawa, K., Omura,I., Nishizawa, S.

    2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018   1938 - 1942   2018.05

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    日本   新潟  

    DOI: 10.23919/IPEC.2018.8507885

  • Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET Reviewed

    Kobayashi K., Sudo M., Omura I.

    Japanese Journal of Applied Physics   57 ( 4 )   2018.04

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    Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate-drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (C ), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for C curves as three divided components. Output charge (Q ) and stored energy (E ) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Q loss increased depending on switching frequency. This analysis reveals that Q may become a significant issue in next-generation high-efficiency FP-MOSFETs. oss oss oss oss oss oss

    DOI: 10.7567/JJAP.57.04FR14

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  • Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET Reviewed

    2018.03

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  • Current filament monitoring under unclamped inductive switching conditions on real IGBT interconnection Reviewed

    2018.03

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  • Power Loss Analysis of 60 V Trench Field-Plate MOSFETs utilizing Structure Based Capacitance Model for Automotive Application Reviewed

    2018.03

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  • Current filament monitoring under unclamped inductive switching conditions on real IGBT interconnection Reviewed

    Tsukuda M., Arimoto T., Omura I.

    CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems   430 - 434   2018.01

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    Destruction under unclamped inductive switching is typical, catastrophic destruction phenomena. We used our original printed circuit board Rogowski sensor and monitored current filaments in IGBT under unclamped inductive switching conditions at emitter pads of IGBT devices. The current filament varied a little by switching condition. Even with the same switching condition, the current varied a little from sample to sample. Temperature and photoemission monitoring was sufficient to analyse a major current filament under unclamped inductive switching condition from the standpoint of time resolution. The spatial resolution of current monitoring should be improved to monitor minor phenomena of current filaments.

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  • Power loss analysis of 60 V trench field-Plate MOSFETs utilizing structure based capacitance model for automotive application Reviewed

    Kobayashi K., Sudo M., Omura I.

    CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems   122 - 127   2018.01

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    We propose a structure based capacitance model for output capacitance (Coss) and reverse transfer capacitance (Crss) in 60-V class source-field-plate (SFP) and gate-field-plate (GFP) MOSFETs. C-V curves obtained by the model showed good agreement with TCAD simulation. Output charge (Qoss), stored energy (Eoss) and turn-off waveforms also could be calculated very well. In assumption of 30 V, 70 A and 20 to 200 kHz switching operation, power losses related to the FP-MOSFET’s features were estimated by utilizing the model. Moreover, we compared advantages of both FP-MOSFETs for several use conditions.

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  • スケーリングIGBTが拓くパワーエレクトロニクスの新しいパラダイム Reviewed

    平本 俊郎, 大村 一郎

    応用物理   2017.11

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  • Structure Based Compact Model for Output Capacitance of Trench Field-Plate MOSFET to Enable Power Loss Prediction Reviewed

    2017.09

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  • Temperature Distribution Imaging inside Power Devices by Real-Time Simulation Reviewed

    2017.09

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  • Clamp type built-in current sensor using PCB in high-voltage power modules Reviewed

    66-67   517 - 521   2017.09

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  • Real-time imaging of temperature distribution inside a power device under a power cycling test Reviewed

    66-67   490 - 494   2017.09

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  • Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications Reviewed

    66-67   465 - 469   2017.09

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  • 3D scaling for insulated gate bipolar transistors (IGBTs) with low V<inf>ce(sat)</inf> Reviewed

    Tsutsui K., Kakushima K., Hoshii T., Nakajima A., Nishizawa S., Wakabayashi H., Muneta I., Sato K., Matsudai T., Saito W., Saraya T., Itou K., Fukui M., Suzuki S., Kobayashi M., Takakura T., Hiramoto T., Ogura A., Numasawa Y., Omura I., Ohashi H., Iwai H.

    Proceedings of International Conference on ASIC   2017-October   1137 - 1140   2017.07

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    Three dimensionally (3D) scaled IGBTs that have a scaling factor of 3 (k=3) with respect to current commercial products (k=1) were fabricated for the first time. The scaling was applied to the lateral and vertical dimensions as well as the gate voltage. A significant decrease in ON resistance, - V reduction from 1.70 to 1.26 V - was experimentally confirmed for the 3D scaled IGBTs. ce(sat)

    DOI: 10.1109/ASICON.2017.8252681

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  • General-Purpose Clocked Gate Driver IC With Programmable 63-Level Drivability to Optimize Overshoot and Energy Loss in Switching by a Simulated Annealing Algorithm Reviewed

    53 ( 3 )   2350 - 2357   2017.07

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  • Formulation of Single Event Burnout Failure Rate for High Voltage Devices in Satellite Electrical Power System Reviewed

    2017.06

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  • Current Distribution Based Power Module Screening by New Normal/Abnormal Classification Method, with Image Processing Reviewed

    2017.06

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  • New Power Module Integrating Output Current Measurement Function Reviewed

    2017.06

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  • An Evaluation Circuit for DC-Link Capacitors used in a Single-Phase PWM Inverter Reviewed

    2017.05

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  • High-performance vertical Si PiN diode by hole remaining mechanism Reviewed

    Tsukuda M., Baba A., Shiba Y., Omura I.

    Solid-State Electronics   129   22 - 28   2017.03

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    A novel diode with a unique trench shape is predicted by TCAD simulation to have high performance. The novel 600 V vertical PiN diode with hole pockets by the Bosch deep trench process shows a better trade-off curve between reverse recovery loss and forward voltage. The reverse recovery loss is reduced by half. In addition, the active chip size of the novel diode is reduced to two-thirds that of the conventional PiN diode in the same forward voltage. Thanks to the hole pockets with an electric field in the diagonal direction, the remaining hole suppresses the surge voltage with noise for high performance. In this paper, we specially focus on the analysis of phenomenon and the noise suppression mechanism during reverse recovery. The novel diode structure is a strong candidate when developing the fabrication process after silicon trench etching is established.

    DOI: 10.1016/j.sse.2016.12.006

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  • Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors Reviewed

    63 ( 3 )   856 - 873   2017.03

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  • A New Output Current Measurement Method with Tiny PCB Sensors Capable of Being Embedded in an IGBT Module Reviewed

    IEEE Trans. Power Electron   32 ( 3 )   1707 - 1712   2017.03

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  • A new output current measurement method with tiny PCB sensors capable of being embedded in an IGBT module Reviewed

    Hasegawa K., Takahara S., Tabata S., Tsukuda M., Omura I.

    IEEE Transactions on Power Electronics   32 ( 3 )   1707 - 1712   2017.03

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    This paper proposes a new output current measuring method using tiny printed-circuit-board (PCB) current sensors. The method will make it possible to install the PCB current sensors in an insulated-gate bipolar transistor (IGBT) module. The PCB sensor picks up a switching current flowing through an IGBT chip, and then a combination of a digital circuit based on field-programmable gate array and an integrator circuit reproduces the output current of an inverter from the switching current. A proof-of-concept experimental verification is carried out using a buck converter, which verifies that the proposed method detects a dc component of the output current as well as a ripple component although the PCB sensor is based on the so-called Rogowski coil.

    DOI: 10.1109/TPEL.2016.2606111

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  • New paradigm for power electronics created by IGBT scaling Invited Reviewed

    HIRAMOTO Toshiro, OMURA Ichiro

    Oyo Buturi ( The Japan Society of Applied Physics )   86 ( 11 )   956 - 961   2017.01

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    <p>IGBT (Insulated Gate Bipolar Transistor) scaling improves device performance and reduces the gate drive voltage, resulting in an integration with advanced CMOS VLSI. Based on the concept of IGBT scaling, our target is to establish a new paradigm for power electronics, where automatic optimization is realized for power device control by using the IoT (Internet of Things) and AI (Artificial Intelligence). In this article, the research background, the basic concepts, and a portion of the research achievements are described.</p>

    DOI: 10.11470/oubutsu.86.11_956

    CiNii Article

    Other Link: https://ci.nii.ac.jp/naid/130007715469

  • An evaluation circuit for DC-link capacitors used in a single- phase PWM inverter Reviewed

    Hasegawa K., Omura I., Nishizawa S.

    PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management   2017.01

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    High-power conversion systems are based not only on three-phase inverters but also on singlephase inverters because modular multilevel cascade converters (MMCC) consist of half- or fullbridge single-phase converters. Their DC-link capacitors are a major constraint on the improvement of power density as well as of reliability. Evaluation of dc-link capacitors in terms of power loss, ageing, and failure rate will play an important role in the next-generation power converters. This paper presents an evaluation circuit for dc-link capacitors used in a high-power single-phase PWM inverter. The evaluation circuit produces a practical ripple current waveform and a dc bias voltage into a capacitor under test with a downscaled voltage-rating inverter, which is equivalent to those of the full-scale inverter. Theoretical analysis and experimental results verify the effectiveness of the evaluation circuit.

    DOI: 10.1109/SBMicro.2017.7990846

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  • New power module integrating output current measurement function Reviewed

    Tabata S., Hasegawa K., Tsukuda M., Omura I.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   267 - 270   2017.01

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    This paper proposes a new power module concept that integrates output current measurement function to make inverters compact. The current measurement function is realized by tiny printed-circuit-board (PCB) Rogowski coils. The PCB Rogowski coil picks up a switching current flowing through an IGBT chip, and then a combination of a digital circuit based on a field-programmable-gate-array (FPGA) and an integrator circuit reproduces the output current of the inverter from the switching current. A major concern of the new power module is the effect of reverse recovery current of free-wheeling diodes because the reverse recovery current is superimposed on the switching current. This paper proposes a mitigating method of the reverse recovery current.

    DOI: 10.23919/ISPSD.2017.7988911

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  • Formulation of single event burnout failure rate for high voltage devices in satellite electrical power system Reviewed

    Shiba Y., Dashdondog E., Sudo M., Omura I.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   167 - 170   2017.01

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    Single-Event Burnout (SEB) is a catastrophic failure in the high voltage devices that is initiated by the passage of particles during turn-off state. Previous papers reported that SEB failure rate increases sharply when applied voltage exceeds a certain threshold voltage. On the other hand, the high voltage devices for the artificial satellite have been increasing. In space, due to increase flux of particle, it is predicted that SEB failure rate will be higher. In this paper, we proposed the failure rate calculation method for high voltage devices based on SEB cross section and flux of particles. This formula can calculate the failure rate at space level and terrestrial level depending on the applied voltage of the high voltage devices.

    DOI: 10.23919/ISPSD.2017.7988937

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  • Current distribution based power module screening by new normal/abnormal classification method with image processing Reviewed

    Tsukuda M., Yuki D., Tomonaga H., Kim H., Omura I.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   407 - 410   2017.01

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    We developed a screening equipment for ceramic substrate level power module of IGBT. The equipment realizes a new screening test with current distribution. The equipment acquires magnetic field signals over bonding wires and finally classifies to normal/abnormal module automatically. We established statistics based normal/abnormal classification with image processing. It is expected to be applied for screening in a production line and analysis to prevent the failure of power modules.

    DOI: 10.23919/ISPSD.2017.7988970

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  • High-performance vertical Si PiN diode by hole remaining mechanism Reviewed

    129   22 - 28   2016.12

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  • 20-ns Short-Circuit Detection Scheme with High Variation-Tolerance based on Analog Delay Multiplier Circuit for Advanced IGBTs Reviewed International journal

    Koutaro Miyazaki, Ichiro Omura, Makoto Takamiya and Takayasu Sakurai

    IEEE Southern Power Electronics Conference (SPEC)   2016.12

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  • Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT Reviewed

    K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, and H. Iwai

    2016 IEEE International Electron Devices Meeting   2016.12

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    DOI: 10.1109/IEDM.2016.7838390

  • Mutual Inductance Measurement for Power Device Package Using Time Domain Reflectometry Reviewed

    2016.09

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    USA   Milwaukee  

  • Failure rate calculation method for high power devices in space applications at low earth orbit Reviewed

    64   502 - 506   2016.09

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  • Micro PCB Rogowski coil for current monitoring and protection of high voltage power modules Reviewed

    Masanori Tsukuda, Masahiro Koga, Kenta Nakashima, Ichiro Omura

    64   479 - 483   2016.09

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  • Temperature rise measurement for power-loss comparison of an aluminum electrolytic capacitor between sinusoidal and square-wave current injections Reviewed

    64   98 - 100   2016.09

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  • IGBT avalanche current filamentaion ratio: Precise simulations on mesh and structure effect Reviewed

    Shiba Y., Omura I., Tsukuda M.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   2016-July   339 - 342   2016.07

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    Current filamentaion effect with dynamic avalanche during turn-off transient in IGBT has been discussed for years. In the prior papers, the possibility of device failure has been reported based on TCAD simulation and simulation results have shown that variety of filamentation phenomena exist for conditions assumed in each simulation. It is discussed in this paper, for the first time, that the relationship of filamentation current concentration strength to device design parameters and categorizes filamentation phenomena, introducing current filamentation ratio (CFR). In the paper, guidelines for appropriate mesh pattern selection are also described to ensure the validity of simulation results.

    DOI: 10.1109/ISPSD.2016.7520847

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  • Novel 600 v low reverse recovery loss vertical PiN diode with hole pockets by Bosch deep trench Reviewed

    Tsukuda M., Baba A., Shiba Y., Omura I.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   2016-July   295 - 298   2016.07

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    The performance of a novel diode with characteristic trench shape is predicted by TCAD simulation. A novel 600 V vertical PiN diode with hole pockets by the Bosch deep trench process is proposed for a better trade-off curve between reverse recovery loss and forward voltage. The reverse recovery loss is reduced to a half. In addition, the active chip size of the novel diode is reduced to two-thirds that of the conventional PiN diode in the same forward voltage. The novel diode structure is a strong candidate when the simple fabrication process under development is established.

    DOI: 10.1109/ISPSD.2016.7520836

    Scopus

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  • IGBT Avalanche Current Filamentaion Ratio: Precise Simulations on Mesh and Structure Effect Precise Simulations on Mesh and Structure Effect Reviewed

    Yuji Shiba, Masanori Tsukuda and Ichiro Omura

    339 - 342   2016.06

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    Czech Republic   Prague  

  • Novel 600 V Low Reverse Recovery Loss Vertical PiN Diode with Hole Pockets by Bosch Deep Trench Reviewed

    295 - 298   2016.06

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  • General-purpose clocked gate driver (CGD) IC with programmable 63-level drivability to reduce Ic overshoot and switching loss of various power transistors Reviewed

    Miyazaki K., Abe S., Tsukuda M., Omura I., Wada K., Takamiya M., Sakurai T.

    Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC   2016-May   1640 - 1645   2016.05

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    A general-purpose clocked gate driver (CGD) IC to generate an arbitrary gate waveform is proposed to provide a universal platform for fine-grained gate waveform optimization handling various power transistors. The fabricated IC with 0.18μm BCD process has 63 PMOS and 63 NMOS driver transistors on a chip whose activation patterns are controlled by 6-bit digital signals and 25-MHz clock (= 40-ns time step control). In the 500-V switching measurements, the proposed CGD reduces the IC overshoot by 25% and 41% and the energy loss by 38% and 55% for Si-IGBT and SiC-MOSFET, respectively.

    DOI: 10.1109/APEC.2016.7468086

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  • Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter Reviewed

    IEEE Transactions on Industrial Electronics   63 ( 5 )   2679 - 2687   2016.05

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  • A New Evaluation Circuit with a Low-Voltage Inverter Intended for Capacitors Used in a High-Power Three-Phase Inverter Reviewed

    K. Hasegawa, I. Omura, and S. Nishizawa

    APEC2016   2016.03

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    USA   Long Beach, CA   2016.03.20  -  2016.03.24

    DOI: 10.1109/APEC.2016.7468295

    Scopus

  • Application-specific micro Rogowski coil for power modules -Design tool, novel coil pattern and demonstration- Reviewed

    M. Koga, M. Tsukuda, K. Nakashima, I. Omura

    International Conference on Integrated Power Electronics Systems   2016.03

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    Garmany   Nurnberg   2016.03.08  -  2016.03.10

  • Magnetic flux signal simulation with 16-channel sensor array to specify accurate IGBT current distribution Reviewed

    M. Tsukuda, K. Matsuo, H. tomonaga, S. Okoda, R. Noda, K. Tashiro and I. Omura

    International Conference on Integrated Power Electronics Systems   2016.03

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    Garmany   Nurnberg   2016.03.08  -  2016.03.10

  • Optimal double sided gate control of IGBT for lower turn-off loss and surge voltage suppression Reviewed

    S. Harada, M. Tsukuda, I. Omura

    International Conference on Integrated Power Electronics Systems   2016.03

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    Garmany   Nurnberg   2016.03.08  -  2016.03.10

  • 20-ns Short-circuit detection scheme with high variation-tolerance based on analog delay multiplier circuit for advanced IGBTs Reviewed

    2016.01

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  • State-of-the-art Power Semiconductor Technology Invited

    Omura Ichiro

    The Proceedings of Mechanical Engineering Congress, Japan ( The Japan Society of Mechanical Engineers )   2016 ( 0 )   2016.01

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    DOI: 10.1299/jsmemecj.2016.F012002

    CiNii Article

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  • Mutual inductance measurement for power device package using time domain reflectometry Reviewed

    Hasegawa K., Wada K., Omura I.

    ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings   2016.01

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    Stray inductance inside power device package will be a constraint on improvement of power density as well as switching frequency in power converters because the converters will suffer from electromagnetic interference (EMI)-related problems. This paper proposes a measurement method of mutual inductance for power device packages using time domain reflectometry. The method is characterized by introducing four-terminal measurement that distinguishes self and mutual inductances among collector, emitter, and gate terminals. A measurement fixture for a discrete IGBT is designed, constructed, and tested to ensure repeatability of the proposed method. Experimental results verifies the viability of the proposed method.

    DOI: 10.1109/ECCE.2016.7855285

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  • Development of a supporting system for visual inspection of IGBT device based on statistical feature and complex multi-resolution analysis Reviewed

    Yuki D., Kim H., Tan J.K., Ishikawa S., Tsukuda M., Omura I.

    ICCAS 2015 - 2015 15th International Conference on Control, Automation and Systems, Proceedings   1551 - 1554   2015.12

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    Recently, the necessity of environmental regulation, low fuel consumption, and natural energy development is proposed by environmental issues. So the demands of power transistor devices are increased. But measurement technique of the current distribution is not keeping up with further miniaturized and integrated were needed in present condition. Now, therefore, ensuring security attended high functionalization is a subject. IGBT (Insulated Gate Bipolar Transistor) is the device that used for wide range of power devices. So we are developing imaging system used non-contact sensor arrays aimed to IGBT production line. In this paper, we propose a development of a supporting system for visual inspection of IGBT device based on statistical feature and complex multi-resolution analysis. First, this performs signal de-noising after entering well-known good data and measured data. Second, the statistical feature is expressed the difference between good data and measured data are calculated. Last, classifying of good and inferiority is performed based on the result of threshold processing. In the paper, we applied our algorithm to 28 sample data including 20 good data and 8 inferiority data.

    DOI: 10.1109/ICCAS.2015.7364603

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  • 16-channel micro magnetic flux sensor array for IGBT current distribution measurement Reviewed

    H. Tomonaga, M. Tsukuda, S. Okoda, R. Noda, K. Tashiro, I. Omura

    Microelectronics Reliability   55   1357 - 1362   2015.08

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    DOI: 10.1016/j.microrel.2015.06.045

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  • Failure analysis of power devices based on real-time monitoring Reviewed

    A. Watanabe, M. Tsukuda and I. Omura

    Microelectronics Reliability   55   2032 - 2035   2015.08

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    DOI: 10.1016/j.microrel.2015.06.128

    Scopus

  • High-throughput and full automatic DBC-module screening tester Reviewed

    M. Tsukuda, H. Tomonaga, S. Okoda, R. Noda, K. Tashiro, I. Omura

    Microelectronics Reliability   55   1363 - 1368   2015.08

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    DOI: 10.1016/j.microrel.2015.06.016

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  • New measurement base De-embedded CPU load model for power delivery network design Reviewed

    Okano M., Watanabe K., Naitoh M., Omura I.

    9th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2015-ECCE Asia   2288 - 2293   2015.07

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    CPU load model including on-chip wiring and package interconnection has been required for printed circuit board (PCB) design of digital products according to the improvement in the speed of CPU operation in recent years. Especially, accurate power delivery network (PDN) information inside CPU is indispensable for PCB design according to requirement of low-impedance and the broadband (from DC to GHz) from the inside of CPU to DC-DC converter. While the detailed impedance information inside CPUs is not disclosed to PCB board designers with the complicated back-end and front-end production design for CPU chip and package. This paper aims to establish new methodology to extract CPU load model with combination of measurement and simulation. The method is simple yet powerful for high-end CPU board design.

    DOI: 10.1109/ICPE.2015.7168125

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  • New Measurement Base De-embedded CPU Load Model for Power Delivery Network Design Reviewed

    Motochika Okano, Koji Watanabe, Masamichi Naitoh, and Ichiro Omura

    9th International Conference on Power Electronics ECCE Asia (ICPE 2015-ECCE Asia)   2015.06

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  • 60 GHz Wireless Signal Transmitting Gate Driver for IGBT Reviewed

    Kenichi Yamamoto, Fumio Ichihara, Kazunori Hasegawa, Masanori Tsukuda, and Ichiro Omura

    Proc. of ISPSD2015   133 - 136   2015.05

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    Hong Kong   2015.05.10  -  2015.05.14

    DOI: 10.1109/ISPSD.2015.7123407

    Scopus

  • Ultrafast lateral 600 V silicon SOI PiN diode with geometric traps for preventing waveform oscillation Reviewed

    Masanori Tsukuda, Hironori Imaki, Ichiro Omura

    Solid State Electronics   104   61 - 69   2014.12

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    DOI: 10.1016/j.sse.2014.11.011

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  • Short-circuit protection for an IGBT with detecting the gate voltage and gate charge Reviewed

    K. Hasegawa, K. Yamamoto, H. Yoshida, K. Hamada, M. Tsukuda, I. Omura

    Microelectronics Reliability   54   1897 - 1900   2014.09

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    DOI: 10.1016/j.microrel.2014.07.083

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  • Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: part II Reviewed

    J. Takaishi, S. Harada, M. Tsukuda, I. Omura

    Microelectronics Reliability   54   1891 - 1896   2014.09

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  • High Speed Real-time Temperature Monitoring System inside Power Devices Package Using Infrared Radiation Reviewed

    N. Hirata, A. Watanabe and I. Omurae

    The 2014 International Conference Solid State Devices and Materials   1016 - 1017   2014.09

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  • Ultra-fast Lateral 600 V Silicon PiN Diode Superior to SiC-SBD Reviewed

    Masanori Tsukuda, Hironori Imaki and Ichiro Omura

    Proc. of ISPSD2014   31 - 31   2014.06

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    DOI: 10.1109/ISPSD.2014.6855968

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  • Rea-time failure monitoring system for high power IGBT under acceleration test up to 500A stress Reviewed

    Akihiko Watanabe, Masanori Tsukuda and Ichiro Omura

    Proc. of ISPSD2014   338 - 341   2014.06

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  • High-throughput DBC-assembled IGBT screening for power module Reviewed

    Masanori Tsukuda, Seiichi Okoda, Ryuzo Noda, Katsuji Tashiro and Ichiro Omura

    International Conference on Integrated Power Electronics System   2014.02

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  • Internal degradation monitoring of power devices during power cycling test Reviewed

    Akihiko Watanabe, Masahiro Tsukuda and Ichiro Omura

    International Conference on Integrated Power Electronics System   2014.02

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  • High-throughput DBC-assembled IGBT screening for power module Reviewed

    Tsukuda M., Okoda S., Noda R., Tashiro K., Omura I.

    CIPS 2014 - 8th International Conference on Integrated Power Electronics Systems, Proceedings   2014.01

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    High-throughput DBC-assembled IGBT screening equipment for a production line is under development in order to prevent early failure of power modules. The equipment has been planning to have automatic GO/NO GO judgment technology by high-throughput measurement of current signal distribution with non-contact sensor arrays with small coils over the bonding wires of IGBT chips. Basic technology and Prototypes of a sensor, an analog amplifier, digital compensation technology, a test head and power circuit have been almost completed. The authors will fabricate the sensor arrays and develop GO/NO GO judgement technology with the integration of a basic technology.

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  • Real-time failure monitoring system for high power IGBT under acceleration test up to 500 A stress Reviewed

    Watanabe A., Omura I., Tsukuda M.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   338 - 341   2014.01

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    Real-time failure monitoring system for IGBT module was demonstrated under 500 A power cycling test. The system successfully captured internal phenomena occurred in interface regions of the device under test. Moreover, we proposed realtime failure analysis method by combining the real-time monitoring and image processing techniques. This failure analysis method enables to distinguish the place where degradation occurs in DUT and also trace internal degradation process to failure. © 2014 IEEE.

    DOI: 10.1109/ISPSD.2014.6856045

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  • Ion-beam irradiation effect in the growth process of graphene on silicon carbide-on-insulator substrates Reviewed

    Okano M., Edamoto D., Uchida K., Omura I., Ikari T., Nakao M., Naitoh M.

    Materials Science Forum   778-780   1170 - 1173   2014.01

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    We investigated the effect of ion-beam irradiation of the 3C-SiC(111) surface on the growth of graphene by the SiC surface-decomposition method. When a 3C-SiC(111) surface was irradiated by 1 keV Ar ions at a dose of 4.5 × 10 cm in an ultra-high-vacuum chamber and then annealed at 1200 °C for 1 min, the formation of graphene layers was promoted in comparison with that in the absence of ion-beam irradiation. X-ray photoelectron spectroscopy studies showed that Ar ion bombardment of the 3C-SiC(111) caused breakage of surface bonds and helped Si atoms to desorb from the surface. © (2014) Trans Tech Publications, Switzerland. + 15 -2

    DOI: 10.4028/www.scientific.net/MSF.778-780.1170

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  • Internal degradation monitoring of power devices during power cycling test Reviewed

    Watanabe A., Tsukuda M., Omura I.

    CIPS 2014 - 8th International Conference on Integrated Power Electronics Systems, Proceedings   2014.01

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    A technique to monitor internal degradation to failure of power devices in real time was proposed. Required components for this technique are (1) non-destructive inside imaging, (2) power stress control and (3) device cooling. We constructed the system with scanning acoustic tomography (SAT), DC power supply controlled by own made program and water cooling system, respectively. In the case of a TO-3P packaged MOSFET, propagation of internal degradations to failure was successfully recorded as time series data by using this system. At the present time, the system is modified for high power and large size IGBT modules.

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  • Real time degradation monitoring system for high power IGBT module under power cycling test Reviewed

    A. Watanabe, M. Tsukuda and I. Omura

    Microelectronics Reliability   ( 53 )   1692 - 1696   2013.10

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1016/j.microrel.2013.07.084

    Scopus

  • IGBT chip current imaging system by scanning local magnetic field Reviewed

    Microelectronics Reliability   ( 53 )   1409 - 1412   2013.10

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  • Real Time Monitoring System for Internal Process to Failure of High Power IGBT Reviewed

    Akihiko Watanabe, Masanori Tsukuda and Ichiro Omura

    The 2013 International Conference on Solid State Devices and Materials   1046 - 1047   M-2-4   2013.09

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  • High Speed Turn-on Gate Driving for 4.5kV IEGT without Increase in PiN Diode Recovery Current Reviewed

    Yamato Miki, Makoto Mukunoki, Takashi Matsuyoshi, Masanori Tsukuda, and Ichiro Omura

    Proc. of ISPSD   347 - 350   8-4   2013.05

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    DOI: 10.1109/ISPSD.2013.6694419

    Scopus

  • Sub-micron Junction Termination for 1200V Class Devices toward CMOS Process Compatibility Reviewed

    Kota Seto, Hironori Imaki, Junpei Takaishi, Masahiro Tanaka, Masanori Tsukuda and Ichiro Omura

    Proc. of ISPSD   281 - 284   HV-P7   2013.05

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    DOI: 10.1109/ISPSD.2013.6694441

    Scopus

  • Role of Simulation Technology for the Progress in Power Devices and Their Applications Invited Reviewed

    Hiromichi Ohashi, Ichiro Omura

    IEEE TRANSACTION ON ELECTRON DEVICES   60 ( 2 )   528 - 536   2013.02

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    DOI: 10.1109/TED.2012.2228272

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  • IGBT Scaling Principle Toward CMOS Compatible Wafer Processes Reviewed

    Masahiro Tanaka, Ichiro Omura

    Solid-State Electronics   800   118 - 123   2012.11

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    DOI: 10.1016/j.sse.2012.10.020

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  • Real-time failure imaging system under power stress for power semiconductors using Scanning Acoustics Tomography(SAT) "jointly worked" Reviewed

    Akihiko Watanabe, Ichiro Omura

    Microelectronics Reliability   52 ( 9-10 )   2081 - 2086   2012.09

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1016/j.microrel.2012.06.090

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  • Universal Trench Edge Termination Design Reviewed

    Kota Seto, Ryu Kamibaba, Masanori Tsukuda and Ichiro Omura

    Proc. of ISPSD   161 - 164   2012.06

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    Language:English   Publishing type:Research paper (international conference proceedings)

    Belgium   Bruges  

    DOI: 10.1109/ISPSD.2012.6229048

    Scopus

  • Bonding Wire Current Measurement with Tiny Film Current Sensors Reviewed

    Hidetoshi Hirai, Yuya Kasho, Masanori Tsukuda and Ichiro Omura

    Proc. of ISPSD   287 - 290   2012.06

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    Belgium   Bruges  

    DOI: 10.1109/ISPSD.2012.6229079

    Scopus

  • Scattering Parameter Approach to Power MOSFET Design for EMI Reviewed

    Masanori Tsukuda, Keiichiro Kawakami and Ichiro Omura

    Proc. of ISPSD   181 - 184   2012.06

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    Belgium   Bruges  

    DOI: 10.1109/ISPSD.2012.6229053

    Scopus

  • Scaling Rule for Very Shallow Trench IGBT toward CMOS Process Compatibility Reviewed

    Masahiro Tanaka and Ichiro Omura

    Proc. of ISPSD   177 - 180   2012.06

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    Belgium   Bruges  

    DOI: 10.1109/ISPSD.2012.6229052

    Scopus

  • "Design for EMI" approach on power PiN diode reverse recovery Reviewed

    M. Tsukuda, K. Kawakami, K. Takahama, I. Omura

    Microelectronics Reliability   ( 51 )   1972 - 1975   2011.10

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    Language:English   Publishing type:Research paper (scientific journal)

    フランス   ボルドー   2011.10.03  -  2011.10.07

    Other Link: http://www.elsevier.com/locate/microrel

  • Structure oriented compact model for advanced trench IGBTs without fitting Reviewed

    M. Tanaka, I. Omura

    Microelectronics Reliability   ( 51 )   1933 - 1937   2011.10

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    Language:English   Publishing type:Research paper (scientific journal)

    フランス   ボルドー   2011.10.03  -  2011.10.07

    Other Link: http://www.elsevier.com/locate/microrel

  • Tiny-scale ``stealth'' current sensor to probe power semiconductor device failure Reviewed

    Yuya Kasho, Hidetoshi Hirai, Masanori Tsukuda, Ichiro Omura

    Microelectronics Reliability   ( 51 )   1689 - 1692   2011.10

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    Language:English   Publishing type:Research paper (scientific journal)

    フランス   ボルドー   2011.10.03  -  2011.10.07

    DOI: 10.1016/j.microrel.2011.06.015

    Scopus

    Other Link: https://www.journals.elsevier.com/microelectronics-reliability

  • Full Digital Short Circuit Protection for Advanced IGBTs Reviewed

    Takuya Tanimura, Kazufumi Yuasa and Ichiro Omura

    Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's   2011.05

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    アメリカ   サンディエゴ   2011.05.23  -  2011.05.26

    DOI: 10.1109/ISPSD.2011.5890790

    Scopus

  • Ultra Low Loss Trench Gate PCI-PiN Diode with VF<350mV Reviewed

    Motohiro Tsuda, Yasuaki Matsumoto, and Ichiro Omura

    Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's   2011.05

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    アメリカ   サンディエゴ   2011.05.23  -  2011.05.26

    DOI: 10.1109/ISPSD.2011.5890796

    Scopus

  • Design of Trench Termination for High Voltage Devices Reviewed

    Ryu Kamibaba,Kenichi Takahama,Ichiro Omura

    ISPSD'10   2010.04

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    広島   2010.04  -  2010.04

  • Challenge to the Barrier of Conduction Loss in PiNDiode toward VF<300 mV with Pulsed CarrierInjection Concept Reviewed

    Yasuaki Matumoto,Kenichi Takahama,Ichiro Omura

    ISPSD'10   2010.04

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    広島   2010.04  -  2010.04

  • Numerical study on very high speed silicon PiN diodepossibilityfor power ICs in comparison with SiC-SBD Reviewed

    Kenichi Takahama,Ichiro Omura

    ISPSD'10   2010.04

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    広島   2010.04  -  2010.04

  • Ultra High Speed Short Circuit Protection for IGBTwith Gate Charge Sensing Reviewed

    Kazufumi Yuasa,Soh Nakamichi,Ichiro Omura

    ISPSD'10   2010.04

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    広島   2010.04  -  2010.04

  • Effect of Buffer Layer Structure on Drain Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs Reviewed

    Wataru Saito,Takao Noda,Masahiko Kuraguchi,Yoshiharu Takada,Kunio Tsuda,Yasunobu Saito,Ichiro Omura,Masakazu Yamaguchi

    IEEE-Trans on Electron Devices   56 ( 7 )   2009.04

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  • Non-Destructive Current Measurement for Surface Mounted Power MOSFET on VRM Board Using Magnetic Field Probing Technique Reviewed

    Yoshiko Ikeda,Yoshihiro Yamaguchi,Yusuke Kawaguchi,Masakazu Yamaguchi,Ichiro Omura

    IEEE 21st International Symposium on Power Semiconductor Devices & ICs   ( 66-68 )   2008.04

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    2008.04  -  2008.04

    DOI: 10.1541/ieejeiss.130.961

    Scopus

    CiNii Article

  • Demonstration of Resonant Inverter Circuit for Electrodeless Fluorescent Lamps Using High Voltage GaN-HEMT Reviewed

    Wataru Saito,Tomokazu Domon,Ichiro Omura

    IEEE Power Electronics Specialists Conference   3324 - 3329   2008.04

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    2008.04  -  2008.04

  • Critical IGBT Design Regarding EMI and Switching Losses Reviewed

    M. Tsukuda,I. Omura

    Proc of ISPSD 2008   185 - 188   2008.04

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    2008.04  -  2008.04

  • Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications Reviewed

    Saito,W.; Takada,Y.; Kuraguchi,M.; Tsuda,K.; Omura,I.

    Electron Devices, IEEE Transactions on   27 ( 2 )   356 - 362   2006.04

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  • Demonstration of 13.56-MHz Class-E Amplifier Using a High-Voltage GaN Power-HEMT Reviewed

    Saito,W.; Domon,T.; Omura,I.; Kuraguchi,M.; Takada,Y.; Tsuda,K.; Yamaguchi

    Electron Device Letters, IEEE,   27 ( 5 )   326 - 328   2006.04

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  • High Voltage and High Switching Frequency Power-Supplies using a GaN-HEMT Reviewed

    T. Domon,I. Omura,W.Saito,K. Tsuda

    Compound Semiconductor Integrated Circuit Symposium 2006 IEEE   575 - 580   2006.04

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    2006.04  -  2006.04

  • Demonstration of High Output Power Density (50 W/cc) Converter using 600 V SJ-MOSFET and SiC-SBD Reviewed

    M. Tsukada,I. Omura,W. Saito,T. Domon

    4th International Conference on Integrated Power Electronics Systems   167 - 170   2006.04

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    2006.04  -  2006.04

  • A 15.5 mOhmcm2-680V Superjunction MOSFET Reduced On-Resistance by Lateral Pitch Narrowing Reviewed

    W. Saito,I. Omura,S. Aida S. Koduki,M. Izumisawa,H. Yoshioka,H. Okumura,M. Yamaguchi and T. Ogura

    Proc on IEEE ISPSD, 2006   293 - 296   2006.04

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    2006.04  -  2006.04

  • A New Stored-Charge-Controlled Over-Voltage Protection Concept for Wide RBSOA in High-Voltage Trench-IEGTs Reviewed

    T. Ogura,K. Sugiyama,I. Omura,M. Yamaguchi,S. Teramae,N. Yamano and S. Iesaka

    IEEE, ISPSD 2006   25 - 28   2006.04

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    2006.04  -  2006.04

  • Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage Reviewed

    Saito W.,Kuraguchi M.,Takada Y.,Tsuda K,Omura I.,Ogura T

    Electron Devices, IEEE Transactions on   52 ( 2 )   159 - 164   2005.04

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  • High breakdown voltage (>1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process Reviewed

    Saito,W.; Omura,I.; Aida,S.; Koduki,S.; Izumisawa,M.; Yoshioka,H.; Ogura,T.

    Electron Devices, IEEE Transactions on   52 ( 10 )   2317 - 2322   2005.04

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  • 380v/1.9A GaN power-HEMT: current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier Reviewed

    Saito W.,Kuraguchi M.,Takada Y.,Tsuda K.,Domon T.,Omura I.,Yamaguchi M.

    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International   2005.04

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    2005.04  -  2005.04

  • Demonstration of High Power Density(30W/cc) Converter using 600V SiC-SBD and Low Impedance Gate Driver Reviewed

    M. Tsukuda,I. Omura,T. Domon,W. Saito and T. Ogura

    5th International Power Electronics Conference S32-4   2005.04

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    2005.04  -  2005.04

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Publications (Books)

  • 2020年度版 薄膜作製応用ハンドブック

    監修者 權田 俊一(Contributor)

    (株)エヌ・ティー・エス  2020.02  ( ISBN:978-4-86043-631-5

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    Language:Japanese

Conference Prsentations (Oral, Poster)

  • パワーサイクル試験のDUT温度係数依存性

    秋元健志, 大村一郎

    信学技報(電子情報通信学会技術研究報告. EE, 電子通信エネルギー技術 ) 

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    Event date: 2022.01.27 - 2022.01.28   Language:Japanese  

  • MOSゲート型パワー半導体におけるセルフターンオン現象の解析とモデル化

    西尾貴植, 大村一郎

    電子情報通信学会/ 電子通信エネルギー技術研究会(EE) 

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    Event date: 2021.01.25   Language:Japanese  

  • パワーデバイス電流集中測定技術

    西尾成植, 松浦成哉, 附田正則, 大村一郎

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2020.12.21 - 2020.12.22   Language:Japanese  

  • 13kV UHV-IGBTの理論検討

    伊東篤史, 大村一郎

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2020.12.21 - 2020.12.22   Language:Japanese  

  • Cosmic Ray Failure Rate Calculation for Power Semiconductor Device for Aircraft applications

    Srikanth Gollapudi, Ichiro Omura

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2020.12.21 - 2020.12.22   Language:English  

  • パワーサイクル試験の高精度化に向けた研究

    川内勇真, 秋元健志, 渡邉晃彦, 大村一郎

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2020.12.21 - 2020.12.22   Language:Japanese  

  • 赤外線カメラを使用したパワー半導体の歪みと温度の同時モニタリング

    増田貴樹, 渡邉晃彦, 大村一郎

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2020.12.21 - 2020.12.22   Language:Japanese  

  • 650V定格FP-MOSFET実現に向けた理論検討

    星原宏紀, 伊東篤史, 大村一郎

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2020.12.21 - 2020.12.22   Language:Japanese  

  • デジタルゲートドライブ方式を用いたIGBTのスイッチング特性最適化技術の研究

    原崎宏治, 附田正則, 大村一郎

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2020.12.21 - 2020.12.22   Language:Japanese  

  • Simultaneous Monitoring of Strain and Temperature for Power Semiconductor using Single IR Camera

    Yoshiki Masuda Akihiko Watanabe, Ichiro Omura

    8th International Symposium on Applied Engineering and Sciences(SAES2020) 

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    Event date: 2020.12.12 - 2020.12.19   Language:English  

  • SEB Failure Rate Calculation for High Power Semiconductor due to Neutrons at Aviation Altitude

    Srikanth Gollapudi, Ichiro Omura

    8th International Symposium on Applied Engineering and Sciences(SAES2020) 

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    Event date: 2020.12.12 - 2020.12.19   Language:English  

  • 13kV UHV-IGBT : Feasibility Study

    Atsushi Ito, Ichiro Omura

    8th International Symposium on Applied Engineering and Sciences(SAES2020) 

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    Event date: 2020.12.12 - 2020.12.19   Language:English  

  • Development of Condition Monitoring System for Power Semiconductor Devices

    Kazuha Watanabe, Masanori Tsukuda, Li Guan, Ichiro Omura

    8th International Symposium on Applied Engineering and Sciences(SAES2020) 

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    Event date: 2020.12.12 - 2020.12.19   Language:English  

  • Development of noise measurement System for power electronics equipment

    Tomoki Furuta, Kota Matsuo, Ichiro Omura

    8th International Symposium on Applied Engineering and Sciences(SAES2020) 

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    Event date: 2020.12.12 - 2020.12.19   Language:English  

  • パワー半導体の予知保全を実現する特性モニタリング技術

    管理, 渡辺和葉, 附田正則, 大村一郎

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2019.11.28 - 2019.11.29   Language:Japanese  

  • 5Vゲート駆動による3300VスケーリングIGBTの動作実証

    更屋拓哉, 伊藤一夫, 高倉俊彦, 福井宗利, 鈴木慎一, 竹内 潔, 附田正則, 沼沢陽一郎, 佐藤克己, 末代知子, 齋藤 渉, 角嶋邦之, 星井拓也, 古川和由, 渡辺正裕, 執行直之, 若林 整, 筒井一生, 岩井 洋, 小椋厚志, 西澤伸一, 大村一郎, 大橋弘通, 平本俊郎

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2019.11.28 - 2019.11.29   Language:Japanese  

  • パワー半導体の高耐量化に向けた超高速チップ表面温度分布イメージングシステムの開発

    池亀恵市, 渡邉晃彦, 大村一郎

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2019.11.28 - 2019.11.29   Language:Japanese  

  • 5Vゲート駆動による3300VスケーリングIGBTのスイッチング動作 Invited

    平本俊郎, 更屋拓哉, 伊藤一夫, 高倉俊彦, 福井宗利, 鈴木慎一, 竹内潔, 附田正則, 沼沢陽一郎, 佐藤克己, 末代知子, 齋藤渉, 角嶋邦之, 星井拓也, 古川和由, 渡辺正裕, 執行直之, 若林整, 筒井一生, 岩井洋, 小椋厚志, 西澤伸一, 大村一郎, 大橋弘通

    電子情報通信学会SDM/ICD研究会8月研究会  

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    Event date: 2019.08.07 - 2019.08.09   Language:Japanese  

  • 5Vゲート駆動1200V級スケーリングIGBTの動作実証とスイッチング損失の低減 Invited

    更屋拓哉, 伊藤一夫, 高倉俊彦, 福井宗利, 鈴木慎一, 竹内潔, 附田正則, 沼沢陽一郎, 佐藤克己, 末代知子, 齋藤渉, 角嶋邦之, 星井拓也, 古川和由, 渡辺正裕, 執行直之, 筒井一生, 岩井洋, 小椋厚志, 西澤伸一, 大村一郎, 大橋弘通, 平本俊郎

    応用物理学会 シリコンテクノロジー分科会 第213回研究集会 電通SDM 共催研究集会 

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    Event date: 2019.01.29   Language:Japanese  

  • Real-Time Monitoring for Improvement of Reliability of Power Devices

    Akihiko Watanabe, Shingo Hiroyoshi, Ichiro Omura

    6th International Symposium on Applied Engineering and Sciences (SAES2018) 

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    Event date: 2018.12.15 - 2018.12.16   Language:English  

  • 宇宙環境で用いるパワーデバイスの宇宙線故障率の算出法提案

    永松拓朗, 須藤雅貴, 大村一郎

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2018.11.01 - 2018.11.02   Language:Japanese  

  • 大容量PWMインバータの小型化を可能にする新しい出力電流検出システムの開発

    肖駿, 長谷川一徳, 一木真生, 附田正則, 大村一郎, 嘉藤徹

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2018.11.01 - 2018.11.02   Language:Japanese  

  • 内部劣化および熱・電気特性の同時観測による複合型故障解析装置の実証

    廣吉慎吾, 渡邉晃彦, 大村一郎, 嘉藤徹

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2018.11.01 - 2018.11.02   Language:Japanese  

  • 次世代IGBT 用超高速短絡保護システムの開発

    一木真生, 有元貴昭, 安部征哉, 附田正則, 大村一郎

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2018.11.01 - 2018.11.02   Language:Japanese  

  • シリコンウェーハにおける自由キャリアのバルク・表面再結合拡散モデル: III. キャリア励起レーザの減衰を考慮した厳密解

    金田 寛,大村 一郎

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.09.18 - 2018.09.21   Language:Japanese  

  • パワーエレクトロニクスとLSIの異分野連携:IGBT向けデジタルゲートドライバIC

    高宮真, 宮崎耕太郎, 崔 通, 小原秀嶺, 萬年智介, 和田圭二, 附田正則, 安部征哉, 大村一郎, 桜井貴康

    電子情報通信学会ソサイエティ大会 

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    Event date: 2018.09.11 - 2018.09.14   Language:Japanese  

  • ダイオード整流器・三相PWMインバータシステムにおける システムにおける直流リンクコンデンサのモニタリング手法

    永松拓朗, 須藤雅貴, 大村一郎

    電気学会産業応用部門大会 

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    Event date: 2018.08.28 - 2018.08.30   Language:Japanese  

  • Prospects of GaN technology in power devices

    Giorgia Longobardi, Ichiro Omura

    BIT’s 4th Annual World Congress of Smart Materials-2018 (WCSM-2018)  

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    Event date: 2018.03.06 - 2018.03.08   Language:English  

  • ダブルパルス試験によるパワーエレクトロニクス機器用 ノイズ計測システムの構築

    岩﨑量旺

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2017.11.20 - 2017.11.22   Language:Japanese  

  • 電流分布に基づくパワーモジュールの新しいスクリーニング法の提案

    附田 正則

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2017.11.20 - 2017.11.22   Language:Japanese  

  • パワーモジュール内蔵型インバータ出力電流測定システムの開発

    田畑 勝次

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2017.11.20 - 2017.11.22   Language:Japanese  

  • 三次元スケーリングによるIGBTのVCEsat低減の実験的検証

    筒井一生, 角嶋邦之, 星井拓也, 中島昭, 西澤伸一, 若林整, 宗田伊理也, 佐藤克己, 末代知子, 齋藤渉, 更屋拓哉, 伊藤一夫, 福井宗利, 鈴木慎一, 小林正治, 高倉俊彦, 平本俊郎, 小椋厚志, 沼沢陽一郎, 大村一郎,大橋弘通, 岩井洋

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2017.11.20 - 2017.11.22   Language:Japanese  

  • プログラマブルゲートドライバIC を用いたIGBT モジュール用ゲート駆動制御回路の開発

    小原秀嶺, 秋山寿夫, 和田圭二, 附田正則, 大村一郎, 宮崎耕太郎, 高宮真, 桜井貴康

    電気学会産業応用部門大会 

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    Event date: 2017.08.29 - 2017.08.31   Language:Japanese  

  • 平行デュアルレーザビーム法による自由キャリアのバルク寿命評価:酸化膜形成による表面パッシベーション効果の評価

    金田寛

    第64回応用物理学会春季学術講演会  応用物理学会

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    Event date: 2017.03.14 - 2017.03.17   Language:Japanese  

  • 平行デュアルレーザビーム法によるシリコンウェーハのバルクキャリア寿命評価技術

    金田寛

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2016.11.14 - 2016.11.15   Language:Japanese  

  • ディジタルゲート駆動ICを用いたIGBTのスイッチング時における損失とオーバーシュートの自動最適化

    崔 通, 宮崎耕太郎, 安部征哉, 附田正則, 大村一郎, 小原秀嶺, 和田圭二, 高宮真, 桜井貴康

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2016.11.14 - 2016.11.15   Language:Japanese  

  • 平行デュアルレーザビーム法による自由キャリアのバルク寿命評価:Fe故意汚染による寿命劣化の検出

    金田寛

    第77回応用物理学会秋季学術講演会  応用物理学会

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    Event date: 2016.09.13 - 2016.09.16   Language:Japanese  

  • 平行デュアルレーザビーム法による自由キャリアの寿命評価:不純物酸素析出による寿命劣化の検出

    金田寛

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.09.13 - 2016.09.16   Language:English  

  • 平行デュアルレーザビーム法による自由キャリアのバルク寿命評価:装置構成と平行デュアルビームの実現

    金田寛、大村一郎

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.03.19 - 2016.03.22   Language:Japanese  

  • 平行デュアルレーザビーム法による自由キャリアのバルク寿命評価:赤外レーザビーム屈折の理論

    金田寛、大村一郎

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.03.19 - 2016.03.22   Language:Japanese  

  • 三相インバータ用直流リンクコンデンサに適した評価回路の実験検証

    長谷川一徳、大村一郎、西澤伸一

    電気学会電力技術/電力系統技術/半導体電力変換合同研究会 

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    Event date: 2016.03.08 - 2016.03.09   Language:Japanese  

  • 近傍空間磁界可視化システムの計測精度の検証

    鈴木秀斗、松本拓朗、岩崎量旺、古賀仁大、大村一郎

    電気学会電力技術/電力系統技術/半導体電力変換合同研究会 

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    Event date: 2016.03.08 - 2016.03.09   Language:Japanese  

  • 近傍空間磁界可視化システムの実現

    松本拓朗、鈴木秀斗、市原文夫、大村一郎

    電気学会電力技術/電力系統技術/半導体電力変換合同研究会 

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    Event date: 2016.03.08 - 2016.03.09   Language:Japanese  

  • OCVD法によるキャリアライフタイム測定の精度解析

    真辺航、原田翔平、大村一郎

    電気学会電力技術/電力系統技術/半導体電力変換合同研究会 

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    Event date: 2016.03.08 - 2016.03.09   Language:Japanese  

  • リアルタイム内部温度分布可視化システムの構築

    長尾亮輔、渡邉晃彦、大村一郎

    電気学会電力技術/電力系統技術/半導体電力変換合同研究会 

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    Event date: 2016.03.08 - 2016.03.09   Language:Japanese  

  • 高耐圧パワー半導体モジュール用超小型PCB電流センサの開発:ノイズ低減構造の提案と実証

    中島健太、古賀仁大、大村一郎、附田正則

    電気学会電力技術/電力系統技術/半導体電力変換合同研究会 

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    Event date: 2016.03.08 - 2016.03.09   Language:Japanese  

  • パワーモジュールのインテリジェント化;出力電流検出機能の開発

    田畑勝次、高原賢、長谷川一徳、大村一郎

    電気学会電力技術/電力系統技術/半導体電力変換合同研究会 

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    Event date: 2016.03.08 - 2016.03.09   Language:English  

  • パワーモジュール内蔵型出力電流計測手法の新提案

    高原賢、長谷川一徳、附田正則、大村一郎

    電気学会電力技術/電力系統技術/半導体電力変換合同研究会 

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    Event date: 2016.03.08 - 2016.03.09   Language:English  

  • パワーモジュール用PCB超小型電流センサ:専用設計ツールの開発とセンサ試作実証

    古賀仁大、中島健太、大村一郎、附田正則

    電気学会半導体電力変換/モータドライブ合同研究会 

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    Event date: 2016.01.22 - 2016.01.23   Language:Japanese  

  • IGBTダブルゲート構造の提案とアクティブ・ホール注入制御:数値解析による低損失化の原理確認

    原田翔平、大村一郎、附田正則

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2015.10.29 - 2015.10.30   Language:Japanese  

  • 磁束センサアレイを用いたパワーモジュール内電流の可視化システムの開発

    朝長大貴、大村一郎、附田正則、大胡田清一、野田龍三、田代勝治

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2015.10.29 - 2015.10.30   Language:Japanese  

  • IGBTモジュール用超小型電流センサの開発:高精度センサ構造の提案と専用設計環境の構築

    古賀仁大、大村一郎、附田正則

    電気学会電子デバイス/半導体電力変換合同研究会 

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    Event date: 2015.10.29 - 2015.10.30   Language:Japanese  

  • 三相インバータ用直流リンクコンデンサに適した評価回路

    長谷川一徳、大村一郎、西澤伸一

    電気学会産業応用部門大会 

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    Event date: 2015.09.02 - 2015.09.04   Language:Japanese  

  • A Wireless monitoring system for gate-voltage waveforms of IGBTs

    The 2ed Universiti Putra Malaysia-Kyushu Institute of Technology International Symposium of Applied Engineering and Sciences (SAES2014) 

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    Event date: 2014.12.20 - 2014.12.21   Language:English  

  • High-performance IGBTs with Very Shallow Trench Gate up to 13 kV

    The 2ed Universiti Putra Malaysia-Kyushu Institute of Technology International Symposium of Applied Engineering and Sciences (SAES2014) 

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    Event date: 2014.12.20 - 2014.12.21   Language:English  

  • Fast Recovery Diode with Convexo-concave-shaped Traps

    The 2ed Universiti Putra Malaysia-Kyushu Institute of Technology International Symposium of Applied Engineering and Sciences (SAES2014) 

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    Event date: 2014.12.20 - 2014.12.21   Language:English  

  • Current distribution imaging system for power devices using tiny ferrite core sensor

    The 2ed Universiti Putra Malaysia-Kyushu Institute of Technology International Symposium of Applied Engineering and Sciences (SAES2014) 

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    Event date: 2014.12.20 - 2014.12.21   Language:English  

  • Current imbalance measurement among chips in IGBT module with ultra-small PCB probe

    The 2ed Universiti Putra Malaysia-Kyushu Institute of Technology International Symposium of Applied Engineering and Sciences (SAES2014) 

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    Event date: 2014.12.20 - 2014.12.21   Language:English  

  • Numerical design method of multi-turn coil for wireless power transfer circuit based on electrical circuit simulation

    The 2ed Universiti Putra Malaysia-Kyushu Institute of Technology International Symposium of Applied Engineering and Sciences (SAES2014) 

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    Event date: 2014.12.20 - 2014.12.21   Language:English  

  • SOI超高速横型シリコンダイオード

    今城寛紀

    電気学会電子デバイス/半導体電力変換合同研究 

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    Event date: 2014.10.30 - 2014.10.31   Language:Japanese  

  • 60GHz無線モジュールを用いたワイヤレス・ゲートドライブ回路

    山本研一

    電気学会電子デバイス/半導体電力変換合同研究 

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    Event date: 2014.10.30 - 2014.10.31   Language:Japanese  

  • IGBTモジュール高信頼化に向けたチップ間電流不均衡計測技術の開発

    山口治之

    電気学会電子デバイス/半導体電力変換合同研究 

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    Event date: 2014.10.30 - 2014.10.31   Language:Japanese  

  • IGBTのゲート電化・ゲート電圧検出を用いた負荷短絡保護

    吉田秀太郎

    電気学会半導体電力変換/モータドライブ合同研究会 

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    Event date: 2014.01.24 - 2014.01.25   Language:Japanese  

  • マイクロフィルムセンサを用いた電流集中現象の画像化

    松下幸平

    電気学会電子デバイス/半導体電力変換合同研究  電気学会

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    Event date: 2013.10.21 - 2013.10.22   Language:Japanese  

  • リアルタイムモニタリング機能を持ったゲート駆動システムの構築

    濱田航太

    電気学会電子デバイス/半導体電力変換合同研究 

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    Event date: 2013.10.21 - 2013.10.22   Language:Japanese  

  • High Speed Turn-on Gate Driving for 4.5kV IEGT without Increase in PiN Diode Recovery Current

    UPM-Kyutech Symposium of Applied Engineering and Sciences 

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    Event date: 2013.09.30 - 2013.10.01   Language:English  

  • Wireless Energy Transfer Technology with High Frequency GaN Transistor

    UPM-Kyutech Symposium of Applied Engineering and Sciences 

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    Event date: 2013.09.30 - 2013.10.01   Language:English  

  • Failure analysis of power semiconductor devices based on real time monitoring

    UPM-Kyutech Symposium of Applied Engineering and Sciences (UKSAES2013) 

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    Event date: 2013.09.30 - 2013.10.01   Language:English  

  • High Power Semiconductor, past, present and the future

    UPM-Kyutech Symposium of Applied Engineering and Sciences 

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    Event date: 2013.09.30 - 2013.10.01   Language:English  

  • 高耐圧パワーデバイス用スケールダウン・テストヘッドの開発

    松吉峻

    電子情報通信学会電子通信エネルギー技術研究会  電子情報通信学会

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    Event date: 2013.01.24 - 2013.01.25   Language:Japanese  

  • Discussion of High Frequency Oscillation on Power PiN Diode

    The Papers of Joint Technical Meeting on Electron Devices and Semiconductor Power Converter, IEE Japan  

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    Event date: 2011.11.27 - 2011.11.28   Language:Japanese  

    CiNii Article

  • High speed temperature measurement with InAs infrared sensor for power semiconductor chips

    The Papers of Joint Technical Meeting on Electron Devices and Semiconductor Power Converter, IEE Japan  

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    Event date: 2011.11.27 - 2011.11.28   Language:Japanese  

    CiNii Article

  • Full Digital Short Circuit Protection for Advanced IGBTs

    The Papers of Joint Technical Meeting on Electron Devices and Semiconductor Power Converter, IEE Japan  

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    Event date: 2011.11.27 - 2011.11.28   Language:Japanese  

  • 磁界プローブによるVRMボード表面実装パワーMOSFETの非破壊電流測定法の開発

    未入力 

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    Event date: 2009.04   Language:Japanese  

  • EMIノイズとスイッチング損失を考慮したIGBT の限界設計

    電気学会合同研究会 

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    Event date: 2008.04   Language:Japanese  

  • GaN-HEMTを用いた高電圧・高周波(>10MHz)E級アンプ回路

    電子情報通信学会 研究会 

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    Event date: 2007.04   Language:Japanese  

  • 低オン抵抗高耐圧GaN-MISFET

    2006年春期 第53回応用物理学関係連合講演会 

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    Event date: 2006.04   Language:Japanese  

  • 電源用GaNパワーデバイス

    電子情報通信学会 総合大会 

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    Event date: 2006.04   Language:Japanese  

  • VRM 開発用マイクロ電流プローブ(高dI/dt (≧2000A/μsec) 逆回復動作の測定)

    電気学会 半導体電力変換研究会 

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    Event date: 2006.04   Language:Japanese  

  • フィールドプレート構造による高耐圧GaN-HEMTの電流コラプス抑制

    2006年春期 第53回応用物理学関係連合講演会 

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    Event date: 2006.04   Language:Japanese  

  • 高耐圧(>1000V)Semi Super junction MOSFET

    電気学会 電子デバイス・半導体電力変換合 同研究会 

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    Event date: 2005.04   Language:Japanese  

  • 1200V系Si-IGBTと1200V系SiC-SBDによる2レベル三相インバータの損失予測

    平成17年電気学会全国大会 

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    Event date: 2005.04   Language:Japanese  

  • 次世代パワーデバイス開発に向けて:IGBT開発動向

    電気学会、電子デバイス技術委員会 

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    Event date: 2005.04   Language:Japanese  

  • ワイドギャップ半導体パワーデバイスの現状と展望

    本人

    応用物理学会 応用電子物性研究例会 

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    Event date: 2004.04   Language:Japanese  

  • 600V-SiC-SBDを用いた300Wチョッパ変換器の体積予測

    平成16年電気学会全国大会電力変換・制御回路方式 DC/DC変換回路(II) 

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    Event date: 2004.04   Language:Japanese  

  • 600V GaN-HEMTを用いたDC-DCコンバータ連続運転

    電子情報通信学会 電子デバイス研究会 

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    Event date: 2004.04   Language:Japanese  

  • チョッパ回路における600V系SiC-SBDの低損失化評価

    電気学会 半導体電力変換研究会 

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    Event date: 2004.04   Language:Japanese  

  • IGBTモジュール内のチップ電流測定

    平成16年電気学会全国大会 

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    Event date: 2004.04   Language:Japanese  

  • 600V AlGaN/GaN HEMT の試作とDC-DC コンバータ連続運転試験

    電気学会 電子デバイス研究会 

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    Event date: 2004.04   Language:Japanese  

  • 20mΩcm2-600V クラスSuperjunction MOSFET

    電気学会 電子デバイス・半導体電力変換 合同研究会 

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    Event date: 2004.04   Language:Japanese  

  • 4.5kV-6kA 遮断IEGT 圧接型パッケージの開発

    本人

    電気学会 電子デバイス・半導体電力変換 合同研究会 

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    Event date: 2003.04   Language:Japanese  

  • フィールドプレート構造を用いたGaNパワーデバイスの最適設計

    電子情報通信学会 電子デバイス研究会 

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    Event date: 2003.04   Language:Japanese  

  • AlGaN/GaN HEMTのパワーデバイス応用

    応用物理学会 学術講演会 シンポジウムGaN電子デバイスの進展と実用化への課題 

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    Event date: 2003.04   Language:Japanese  

  • 高耐圧パワーMOSFETの数MHzスイッチング動作検討

    電気学会産業応用部門大会(JIASC03)  

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    Event date: 2003.04   Language:Japanese  

  • 次々世代CPU用電源

    照明学会 公開研究会「照明機器における光の発生と回路技術、部品・デバイス・材料技術」 

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    Event date: 2003.04   Language:Japanese  

  • 高電圧電力用半導体素子の宇宙線による破壊メカニズムの解明

    第12回 TIARA研究発表会― イオンビームを利用した最新の材料・バイオ研究 ― 

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    Event date: 2003.04   Language:Japanese  

  • プレーナ型4HSiC-SITの試作・評価

    電気学会全国大会 

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    Event date: 2003.04   Language:Japanese  

  • 600V Semi-Superjunction MOSFET

    電気学会 電子デバイス・半導体電力変換 合同研究会 

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    Event date: 2003.04   Language:Japanese  

  • 高アバランシェ耐量を有する600V高速NPT-IGBT

    電気学会 電子デバイス・半導体電力変換 合同研究会 

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    Event date: 2003.04   Language:Japanese  

  • 埋め込みp層によるSBDの超低オン抵抗化

    電気学会 電子デバイス 半導体電力変換 合同研究会 

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    Event date: 2002.04   Language:Japanese  

  • 高電圧電力用半導体素子の宇宙線による破壊メカニズムの解明

    第11回 TIARA研究発表会 

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    Event date: 2002.04   Language:Japanese  

▼display all

Industrial Property

  • ロゴスキ型電流センサおよびインバータ並びにロゴスキ型電流センサの装着方法

    大村一郎

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    Application no:特願2021-050490  Date applied:2021.03.24

  • 電力変換用半導体装置の状態推定システム及び状態推定方法

    大村一郎、附田正則、管理、渡辺和葉

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    Application no:PCT/JP2020/032604  Date applied:2020.08.28

  • 電流計測装置、電流計測方法およびプログラム

    大村一郎

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    Application no:特願2019-101808  Date applied:2019.05.30

  • 電力変換器、可変信号遅延回路及び電力変換方法

    大村一郎、トリパシラビナス

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    Application no:特願2018-164922  Date applied:2018.09.03

  • 半導体装置および半導体装置の製造方法

    附田正則、大村一郎、馬場昭好

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    Patent/Registration no:特許第6709425号  Date registered:2020.05.27 

Lectures

  • パワーデバイス、モジュールのセンシング技術

    (一般社団法人)電子実装工学研究所( IMSI  2021.12 

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    Language:Japanese   Presentation type:Invited lecture  

  • カーボンニュートラル実現に貢献する次世代 IGBT と周辺技術

    エネルギーマネージメント・材料デバイス技術分科会  2021.09 

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    Language:Japanese   Presentation type:Invited lecture  

  • Power device current measurement technology for IGBT modules

    2021.08 

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    Event date: 2021.08.25 - 2021.08.27   Language:Japanese   Presentation type:Invited lecture  

  • シリコンIGBT の技術動向とスケーリングIGBT

    第68回応用物理学会春季学術講演会分科シンポジウム  2021.03 

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    Event date: 2021.03.16 - 2021.03.19   Language:Japanese   Presentation type:Invited lecture  

  • 信頼度解析の基礎

    先進パワー半導体分科会 第7回講演会 チュートリアル  2020.12 

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    Language:Japanese   Presentation type:Invited lecture  

  • General formula for SEB failure rate calculation for power devices

    IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2020  2020.09 

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    Language:English   Presentation type:Invited lecture   Venue:Virtual Conference  

  • Power Semiconductor Device Basics

    32nd IEEE International Conference on Microelectronic Test Structures Tutorial  2019.03 

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    Language:English   Presentation type:Invited lecture  

  • JOINT PROJECT REPORT: POWER SEMICONDUCTOR FOR SPACE APPLICATION AND CURRENT SENSOR FOR POWER ELECTRONICS

    1st International Conference on Joint research Program in Mongolia under “Higher Engineering Education Development” Project  2019.03 

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    Language:English   Presentation type:Invited lecture  

  • Measurement of the Electric Current Flow inside Power Modules and Chips with Tiny Sensors

    Fifth International Forum on Advanced Technologies  2019.03 

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    Language:English   Presentation type:Invited lecture  

  • New Collaboration Scheme in Kyutech Power Electronics Research Center

    The 6th Symposium on Applied Engineering and Sciences : SAES2018  2018.12 

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    Language:English   Presentation type:Keynote lecture  

  • パワー半導体のデジタルゲート駆動:NEDO―PJとドライブ関連技術の報告

    NPERC-Jセミナー  2018.12 

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    Language:Japanese   Presentation type:Others  

  • パワーデバイス開発と関連技術

    平成30年度 日本表面真空学会 九州支部学術講演会(九州表面・真空研究会2018)  2018.06 

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    Language:Japanese   Presentation type:Invited lecture  

  • 超小型電流センサによるパワーモジュール内電流の見える化

    第8回 次世代ユビキタス・パワーエレクトロニクスの為の信頼性科学ワークショップ  2018.02 

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    Presentation type:Others  

  • 人工衛星に使用するパワーデバイスの宇宙線耐量

    公益社団法人応用物理学会先進パワー半導体分科会 第10回研究会  2018.01 

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    Presentation type:Invited lecture  

  • パワーデバイス開発と今後の展望

    応用物理学会 結晶工学分科会主催 第21回結晶工学セミナー  2017.01 

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    Presentation type:Invited lecture   Venue:工学院大学 新宿キャンバス  

  • 「How, What and Why:理系は生き残れるのか」

    大阪大学大学院:特別講義  2017.01 

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    Presentation type:Special lecture  

  • 次世代パワーエレクトロニクス研究センターの取り組み

    九工大主催 NEDOシンポジウム  2016.10 

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    Language:Japanese   Presentation type:Others  

  • パワーデバイスの現状とその応用

    日本機械学会2016年度年次大会「先端技術フォーラム」  2016.07 

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    Presentation type:Invited lecture  

  • 新世代Si-IGBTと応用基本技術の研究開発:PJ概要とIGBTドライブ回路技術

    NPERC-Jセミナー  2016.05 

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    Language:Japanese   Presentation type:Others  

  • 2025 年、先端パワー半導体デバイスが目指すビジョン

    NPERC-J第2回ワークショップ 「グリーンエレクトロニクスの創生を目指して」NPERC-Jが描く2025年のパワーエレクトロニク  2015.11 

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    Presentation type:Others  

  • 高度電力化社会を支える次世代パワー半導体の研究

    北九州市環境エレクトロニクス研究所記念ワークショップ  2015.10 

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    Presentation type:Others  

  • Power semiconductor device: Past , Present, and the Future パワー半導体の、過去、現在、将来

    プラナリゼーション研究会「CMP 技術の基礎を理解するサマーキャンプ 2015」  2015.08 

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    Presentation type:Invited lecture  

  • Power semiconductor device: Past , Present, and the Future

    The 9th International Conference on Power Electronics ECCE Asia (ICPE 2015-ECCE Asia)  2015.06 

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    Presentation type:Invited lecture  

  • Power Semiconductors and ”Green Electronics

    International SiC Power Electronics Applications Workshop, ISiCPEAW  2014.05 

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    Presentation type:Invited lecture  

  • 2050年、高度電力化社会実現に向けた次世代パワー半導体の役割~NEDO調査研究から見えてくるエレクトロニクスの方向性~

    第30回低消費電力・高速LSI 技術懇談会  2014.03 

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    Presentation type:Invited lecture  

  • Power Semiconductor,Past, Present and the Future

    2013.11 

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    Presentation type:Invited lecture  

  • Power Electronics Research in Japan

    10Year ECPE Anniversary  2013.04 

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    Presentation type:Invited lecture  

  • Next Generation Power Electronics and Systems~toward New Electronics Technology Scheme~

    シリコンシーベルトサミット福岡2013  2013.02 

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    Presentation type:Invited lecture  

  • Future role of power semiconductors: From “Silicon vs. WBG” to “Silicon and WBG”

    SSDM  2012.09 

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    Presentation type:Invited lecture  

  • 2030 年に向けた低炭素社会実現のためのグリーンエレクトロニクスの役割

    電気学会産業応用部門大会シンポジウム  2012.08 

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    Presentation type:Invited lecture  

  • Semiconductor Power Switches: Principles and the Future

    ISPSD Short Course  2012.06 

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    Presentation type:Invited lecture  

  • Lateral Power Devices: from LDMOS, LIGBT to GaN

    2012 International Symposium on VLSI Technology, Systems and Applications VLSI Design, Automation and Test  2012.04 

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    Presentation type:Invited lecture  

  • パワーデバイスの将来とその役割:「Si×WBG」から「Si+WBG」へ

    電子情報通信学会総合大会  2012.03  電子情報通信学会

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    Presentation type:Invited lecture   Venue:岡山  

  • Si, SiC, GaN - How Will They Share Future Applications?

    ECPE Workshop Future Trends for Power Semiconductors  2012.01  ECPE

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    Presentation type:Invited lecture  

  • IGBT: History, Principle and the Future

    IWPSD2011  2011.12 

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    Presentation type:Invited lecture  

  • Future Role of Power Devices: From "Si or WBG" to "Si and WBG"

    3rd Global COE International Symposium--Electronic Devices Innovation --EDIS2011  2011.12  the Global COE Program "Center for Electronic Devices Innovation"

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    Presentation type:Invited lecture  

  • Introduction: Future Role of Power Electronics and Power Devices toward Low Carbon Society

    SISPAD 2011 Companion Work Shop  2011.09 

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    Presentation type:Keynote lecture  

  • Power Semiconductor Devices for High Power Applications

    SISPAD 2011 Companion Work Shop  2011.09 

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    Presentation type:Invited lecture  

  • Power electronics and power devices toward low-carbon-society

    2011.06 

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    Presentation type:Invited lecture  

  • Future Role of Power Electronics

    Proc. of CIPS  2010.03 

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    Presentation type:Invited lecture  

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Press

  • 戦略デバイスとして期待高まるIGBT   Newspaper, magazine

    大村一郎

    日刊工業新聞  2019.02.18

  • 研究・試験 一貫体制

    大村一郎

    日刊工業新聞  2017.10.26

  • Si IGBTがSiCに肉迫、素子構造や駆動法の改善で   Newspaper, magazine

    大村一郎, 筒井一生

    日経エレクトロニクス  2017.09

  • 世界との開発競争北九州名乗り パワー半導体 市立拠点 今秋開設、企業誘致へ

    大村一郎

    西日本新聞  2015.03.23

  • IGBTの電流密度を2倍に新たな微細化構造で挑む

    大村一郎

    日経エレクトロニクス  2013.02.18

  • 九州半導体の底力:半導体各社の九州拠点の取り組み

    大村一郎

    日本経済新聞  2012.11.21

  • 研究開発・新技術

    大村一郎

    半導体産業新聞  2012.08.08

  • 「省エネ切り札」半導体

    大村 一郎

    読売新聞  2011.10.12

  • 低炭素社会への鍵となるパワー半導体の開発

    大村 一郎

    西日本新聞  2010.10.30

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Honors and Awards

  • 平成30年度地球温暖化防止活動環境大臣表彰「技術開発・製品化部門」

    環境省   2018.12.03

    次世代パワーエレクトロニクス研究センター

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    Country:Japan

  • 2018 IEEE Transactions on Power Electronics Prize Letter Award

    IEEE Power Electronics Society   2018.09

    Kazunori Hasegawa, Satoru Takahara, Shoji Tabata, Masanori Tsukuda, and Ichiro Omura

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    Country:United States

Grants-in-Aid for Scientific Research

  • 新原理に基づく革新的シリコン省エネダイオード

    Grant number:22360118  2010.04 - 2013.03   基盤研究(B)

Other External Funds

  • 大電流パルス発生モジュール研究 

    2020.11

    国立研究開発法人科学技術振興機構 未来創造事業  

Award for Educational Activities

  • 電気学会産業応用部門優秀論発表賞

    一般社団法人電気学会産業応用部門   2020.03.31

  • 電気学会産業応用部門優秀論発表賞

    一般社団法人電気学会産業応用部門   2020.03.31

  • 学生奨励賞

    電気学会パワーデバイス・パワーIC高性能化及び高品質化技術調査専門委員会   2020.12.22

  • 電気学会産業応用部門優秀論発表賞

    一般社団法人電気学会産業応用部門   2019.03.31

Social activity outside the university

  • 次世代パワーエレクトロニクス研究センター ワークショップKyutechPE2022

    Role(s):Lecturer, Planner, Organizing member

    2022.03.08

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    Type:Seminar, workshop

  • 株式会社ケーヒン 自動車業界の今までとこれから

    Role(s):Presenter, Planner, Organizing member

    2019.11.20 - 2019.12.03

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    Audience: College students, Graduate students, Teachers, Researchesrs

  • 次世代PE研究センター主催パワーエレクトロニクスセミナー

    Role(s):Presenter, Chief editor, Planner, Organizing member

    2019.11.20

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    Audience: College students, Graduate students, Teachers, Researchesrs

  • 特別講演会:インバータエアコン誕生からのパワエレトレンドと最新技術

    Role(s):Presenter, Planner, Organizing member

    2019.07.31

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    Audience: College students, Graduate students, Teachers, Researchesrs

  • 半導体デバイスおよびワイドバンドギャップパワー半導体デバイスの最新技術動向

    Role(s):Presenter, Planner, Organizing member

    2019.07.01

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    Audience: College students, Graduate students, Teachers, Researchesrs