Faculty Profiles - OMURA Ichiro

Papers - OMURA Ichiro

Division display >> ／ All the affair displays1 - 190 of about 190

"Single PCB sensor-based output current reproduction for three-phase inverter systems " Reviewed

B. Bayarkhuu, B. Bat-Ochir, B. Dugarjav, I. Omura,

Power Electronic Devices and Components 7 2024.04

Relationships between the Power Semiconductor Device Property, Recombination Lifetime, Carbon Related Defects, and Carbon Concentration of Silicon Wafer Reviewed

Shun Sasaki, Noritomo Mitsugi, Shuichi Samata, Wataru Manabe, Srikanth Gollapudi, Masanori Tsukuda and Ichiro Omura

JSAP Kyushu Chapter Annual Meeting 2023 /The 8th Asian Applied Physics Conference (Asian-APC) 2023.11

New equations to calculate carrier recombination lifetime of silicon epitaxial layer, based on open circuit voltage decay method Reviewed

Shun Sasaki, Noritomo Mitsugi, Shuichi Samata, Wataru Manabe, Srikanth Gollapudi, Masanori Tsukuda and Ichiro Omura

Japanese Journal of Applied Physics 62 2023.11

Short-circuit protection scheme with efficient soft turn-off for power modules Reviewed International journal

"He Du, Yandagkhuu Bayarsaikhan, Ichiro Omura,"

Microelectronics Reliability 150 2023.11

An Experimental Study on Switching Waveform Design with Gate Charge Control for Power MOSFETs Reviewed

Hirotaka Oomori, Ichiro Omura

Power Electronic Devices and Components 6 2023.10

Paralleling of IGBT Power Semiconductor Devices and Reliability Issues Reviewed International journal

Tripathi, Ravi Nath and Ichiro Omura

MDPI Electronics 2023 12 ( 8 ) 2023.09

Space radiation induced failure rate calculation method using energy deposition probability function for high-voltage semiconductor device Reviewed International journal

Luvsanbat Khurelbaatar, Turtogtokh Tumenjargall, Begzsuren Tumendemberel, Otgonbaatar Myagmar, Srikanth Gollapudi, Ichiro Omura, Erdenebaatar Dashdondog

Materialstoday Communications 35 105499 2023.06

Investigation of the Parasitic Inductance Influence on the Short-Circuit Behaviour of High Voltage IGBTs Reviewed International journal

He Du, Ichiro Omura, Shuhei Matsumoto, Takuro Arai

Proc.of 2023 IEEE Applied Power Electronics Conference and Exposition 2023.03

Extension of Zeller’s Silicon Power Device SEB Failure Rate Calculation method to Aviation Altitude Reviewed International journal

Srikanth Gollapudi, Ichiro Omura

Proc. of The 8th International Symposium on Advanced Science and Technology of Silicon Materials 2022.11

A TCAD Simulation Study for a New Technique to Calculate Carrier Recombination Lifetime Based on Open Circuit Voltage Decay Method Reviewed International journal

Shun Sasaki, Noritomo Mitsugi, Shuichi Samata, Srikanth Gollapudi, and Ichiro Omura

Proc. of The 8th International Symposium on Advanced Science and Technology of Silicon Materials 2022.11

Switching waveform design with gate charge control for power MOSFETs Reviewed International journal

Hirotaka Oomori, Ichiro Omura

Power Electronic Devices and Components 3 100018 2022.10

Parasitic oscillation analysis of trench IGBT during short-circuit type II using TCAD-based signal flow graph model Reviewed

Hiroshi Kono, Ichiro Omura

IEEE Transactions on Electron Devices 69 ( 10 ) 5705 - 5712 2022.10

Speed-Up Gate Pulse Method to Suppress Switching Loss and Surge Voltage for MOS Gate Power Device Reviewed International journal

Hiroya Egashira, Hirotaka Oomori, Ichiro Omura

The 34rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2022.05

Dynamic Vgs-Id monitoring system for junction temperature estimation for MOS gate power semiconductors Reviewed International journal

Yandagkhuu Bayarsaikhan, Ichiro Omura

The 34rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2022.05

Hybrid GaN-SiC Power Switches for Optimum Switching, Conduction and Free-Wheeling Performance Reviewed International journal

Battuvshin Bayarkhuu, Ravi Nath Tripathi, Ichiro Omura, Alberto Castellazzi

The 34rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2022.05

Study of parasitic oscillations in trench IGBT during short-circuit type II based on signal flow graph model Reviewed International journal

Hiroshi Kono and Ichiro Omura

CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems 2022.03

Self-turn-on-free criteria for MOS gate power device and circuit Reviewed

Takanao Nishio and Ichiro Omura

CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems 2022.03

Feedback Controlled IPM Inverter with Single PCB Rogowski Coil Sensor Reviewed International journal

Battuvshin Bayarkhuu, Bat-Otgon Bat-Ochir and Ichiro Omura

CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems 2022.03

Thermal grease pump-out visualizing system for power modules using 3D digital image correlation method Reviewed International journal

Issei Manzen and Ichiro Omura

CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems 2022.03

Direct / indirect impinging air jet cooling for power devices and application to power electronics system Reviewed International journal

Shunichiro Nakata, Ichiro Omura

CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems 2022.03

A testing method for evaluating shoot-through immunity of IGBTs in an inverter Reviewed International journal

K. Hasegawa, S. Abe, M. Tsukuda, I. Omura, T. Ninomiya

Microelectronics Reliability 2021.11

Determination of Abnormality of IGBT Images Using VGG16 Reviewed International journal

T. Ogawa, H. Lu, A. Watanabe, I. Omura and T. Kamiya

Proc. of The 21th International Conference on Control, Automation and Systems (ICCAS 2021) 2021.10

Multipurpose Strategy for Energy Storage System Based on Capital Asset Pricing Model With Ensemble Approach Reviewed International journal

Kazufumi Yuasa, Miki Ueshima, Tadatoshi Babasaki, Ichiro Omura

IEEE Access ( IEEE ) 9 106725 - 106733 2021.07

Improved DICM with an IR camera for Imaging of Strain and Temperature in Cross Section of TO packages Reviewed International journal

Yoshiki Masuda, Akihiko Watanabe, Ichiro Omura

Proc. of ISPSD 2021 2021.05

Benchmarking of Digital Gate Driven IGBTs: New Eoff-Vsurge Trade-off Approach Reviewed International journal

Kouji Harasaki, Masanori Tsukuda and Ichiro Omura

Proc. of ISPSD 2021 2021.05

DUT Temperature Coefficient and Power Cycles to Failure Reviewed International journal

Yuma Kawauchi, Kenji Akimoto, Akihiko Watanabe and Ichiro Omura

Proc. of ISPSD 2021 2021.05

Altitude Dependent Failure Rate Calculation for High Power Semiconductor Devices in Aviation Electronics Reviewed International journal

Srikanth Gollapudi and Ichiro Omura

Japanese Journal of Applied Physics 2021.04

Study of parasitic oscillation of a multi-chip SiC MOSFET circuit based on a signal flow graph model by TCAD simulation Reviewed International journal

Hiroshi Kono, Ichiro Omura

Solid-State Electronics ( Elsevier ) 177 2021.03

Multipurpose strategy for energy storage system based on capital asset pricing model with ensemble approach Reviewed International journal

Yuasa K., Ueshima M., Babasaki T., Omura I.

Yuasa K., Ueshima M., Babasaki T., Omura I. 2021.01

3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology Reviewed International journal

Saraya T., Itou K., Takakura T., Fukui M., Suzuki S., Takeuchi K., Tsukuda M., Satoh K., Matsudai T., Kakushima K., Hoshii T., Tsutsui K., Iwai H., Ogura A., Saito W., Nishizawa S., Omura I., Ohashi H., Hiramoto T.

Technical Digest - International Electron Devices Meeting, IEDM 2020.12

Shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction Reviewed

Hasegawa K., Abe S., Tsukuda M., Omura I., Ninomiya T.

Microelectronics Reliability 114 2020.11

Language：English Publishing type：Research paper (scientific journal)

Attention has been paid to the next-generation IGBT toward CMOS compatible wafer processes, which can be driven by a 5-V logic level due to its low threshold gate voltage. This low threshold voltage makes the so-called shoot-through fault severer. Even though the switching speed of the IGBT is intentionally reduced, the shoot-through fault can happen. This paper presents shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction. Theoretical analysis reveals the criterion of the gate impedance with taking parasitic parameters of the inverter into account.

DOI： 10.1016/j.microrel.2020.113765

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Effect of cell size reduction on the threshold voltage of UMOSFETs Reviewed

Baba Y., Omura I.

Microelectronics Reliability 114 2020.11

Language：English Publishing type：Research paper (scientific journal)

UMOSFET on-resistances have been dramatically improved in recent decades with the miniaturization of cell size by innovations in the fabrication process. However, with miniaturization, failure in the gate oxide, large deviations in the threshold voltage and reductions in avalanche capability have emerged as design problems for mass production. In particular, threshold voltage increase have appeared with the introduction of a trench source contact. The source contact trench and MOS gate trench are fabricated next to each other with a narrow silicon mesa region, and the voltage increase appear when the silicon mesa width becomes narrower than 80 nm. So far, it appears that the P+ layer dopant in the contact sidewall diffuses toward the gate oxide and the channel doping increases, which causes the increase in the threshold voltage Vth. We analyzed the distribution of Vth at the wafer level/shot level and found for the first time that the increase in Vth is caused by the punch-through effect from the channel depletion layer to the contact P+ layer, and thus, sidewall dopant diffusion will not affect the increase in Vth. We established an analytical model for the increase in Vth. Our model showed that for the field plate type UMOSFET with a shorter gate contact length, not only is there a increase in Vth, but also it is difficult to control Vth using the conventional channel implantation method.

DOI： 10.1016/j.microrel.2020.113747

Scopus

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Identification of normal and abnormal from ultrasound images of power devices using VGG16 Reviewed

Ogawa T., Lu H., Watanabe A., Omura I., Kamiya T.

International Conference on Control, Automation and Systems 2020-October 415 - 418 2020.10

Language：English Publishing type：Research paper (international conference proceedings)

Power devices are semiconductor devices that handle high voltages and large currents, which are used in electric vehicles, televisions, and trains. Therefore, high reliability and safety are required, and to ensure this, power cycle tests are performed to analyze the breakdown process. Conventional tests are often difficult to analyze due to the influence of sparks generated during the test. Therefore, new tests are being developed by adding ultrasound to conventional methods. The new technology is capable of continuously recording structural changes inside the device during testing, which is expected to make testing much easier than conventional testing. However, the new technology still has some challenges. The main problems are the lack of a method for analyzing large amounts of image data and the extraction of small changes in image features that are difficult to distinguish with the human eye, and the establishment of such a system is required. In this paper, we use deep learning for image classification of the obtained ultrasound images. We propose a new network model with the addition of Batch normalization and Global average pooling to VGG16, which is a pre-trained model. In the experiment, accuracy=98.29%, TPR=98.96% and FPR=7.43% classification accuracy was obtained.

DOI： 10.23919/ICCAS50221.2020.9268275

Scopus

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Altitude Dependent Failure Rate Calculation for High Power Semiconductor Devices in Aviation Electronics Reviewed International journal

Srikanth Gollapudi, Ichiro Omura

International Conference on Solid State Devices and Materials (SSDM2020) 2020.09

太陽光併設蓄電システムの自家消費型長期運用戦略に関する一検討 Reviewed

湯淺一史，植嶋美喜，馬場﨑忠利，大村一郎

電子情報通信学会論文誌 B ( 電子情報通信学会 ) J103-B ( 9 ) 382 - 390 2020.09

Active Voltage Balancing for Series Connected IGBT System using Gate Delay Compensation Reviewed

Ravi Nath Tripathi, Masanori Tsukuda, Ichiro Omura

2019 International Conference on Solid State Devices and Materials 725 - 726 PS-4-02 2020.09

V-I Curve Based Condition Monitoring System for Power Devices Reviewed

Tsukuda M., Guan L., Watanabe K., Yamaguchi H., Takao K., Omura I.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 2020-September 82 - 85 2020.09

Language：English Publishing type：Research paper (international conference proceedings)

According to gaining importance of power electronics systems in the society, reliability issues of power semiconductor devices are the constrains on availability of the system operations. Regular interval based maintenance for higher availability, on the other hand, increases operation cost since the lifetime of power devices have a large deviation with production lots or conditions which they are used. Condition based maintenance (CBM) of power semiconductor devices will be a promising solution for both the availability and cost of power electronics system maintenance. In this study, a high signal resolution condition monitoring system board has been demonstrated. The system monitors real time V-I curve for both switching device and diode with case temperature and the data is stored on board memory and can be monitored on-line. The board was mounted on the gate driver board being supplied power from the gate driver board and demonstrated on a commercial 60kVA inverter.

DOI： 10.1109/ISPSD46842.2020.9170059

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13kV UHV-IGBT: Feasibility Study Reviewed

Ito A., Omura I.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 2020-September 50 - 53 2020.09

Language：English Publishing type：Research paper (international conference proceedings)

Increasing the rated voltage of IGBTs is indispensable for realizing future energy transmission systems such as gigawatt-class UHVDC and high-power motor drives with reduced number of series connection or simplified circuit topology. The voltage of IGBTs, however, has stagnated for 20 years at 6.5kV because of several issues. In this paper, we investigated the feasibility of a 13kV ultra-high voltage IGBT with twice the breakdown voltage of conventional IGBTs using TCAD simulations. As a result, the use of a double gate structure proved to be practical under DC bus voltage of 6.6 kV and a switching frequency of 150 Hz.

DOI： 10.1109/ISPSD46842.2020.9170034

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Dynamic Current Balancing of Parallel Connected IGBT Devices using PCB Sensors for Integration in Power Modules Reviewed International journal

Ravi Nath Tripathi; Masanori Tsukuda; Ichiro Omura

11th International Conference on Integrated Power Electronics Systems (CIPS2020) ( VDE ) 2020.05

Simultaneous Imaging of Strain and Temperature using Single IR Camera Reviewed International journal

Yoshiki Masuda, Akihiko Watanabe and Ichiro Omura

11th International Conference on Integrated Power Electronics Systems (CIPS2020) ( VDE ) 2020.05

IGBT current filamentation observation by segmented collector sensing under UIS condition Reviewed International journal

Seiya Matsuura, Masanori Tsukuda, Ichiro Omura

11th International Conference on Integrated Power Electronics Systems (CIPS2020) ( VDE ) 2020.05

EMI Imaging System Using Double-pulse-compose-method Reviewed International journal

K. Matsuo, M. Tsukuda and I. Omura

11th International Conference on Integrated Power Electronics Systems (CIPS2020) ( VDE ) 2020.05

Digital Gate Drive Control Method for Active Voltage Balancing of Series-connected IGBT Devices Reviewed International journal

R. N. Tripathi, T. Arimoto, M. Tsukuda and I. Omura

11th International Conference on Integrated Power Electronics Systems (CIPS2020) ( VDE ) 2020.05

Detecting Three-Phase Power Inverter Output Currents By A Single PCB Current Sensor Reviewed International journal

B. Bat-Ochir, B. Bayarkhuu, M. Tsukuda, B. Dugarjav and I. Omura

11th International Conference on Integrated Power Electronics Systems (CIPS2020) ( VDE ) 2020.05

Mechanism Clarification of Switching Loss and Surge Voltage / Current Reduction with Active Gate Drive for System Reliability Improvement Reviewed International journal

Seiya Abe, Yusuke Tokita, Masanori Tsukuda, Ichiro Omura

Journal of the Institute of Industrial Applications Engineers ( IIAE ) 8 ( 2 ) 50 - 55 2020.04

Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs Reviewed

Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Kuniyuki, Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Shin-ichi Nishizawa, Ichiro Omura and Toshiro Hiramoto

JJAP 2020.04

Numerical study on the suppression of 4H-SiC PiN diodes forward bias degradation due to substrate basal plane dislocations Reviewed

Satoshi Torimi, Yoshiki Obiyama, Masanori Tsukuda, Ichiro Omura

Solid State Electronics 166 107770 2020.04

Stop-and-Go Gate Drive Minimizing Test Cost to Find Optimum Gate Driving Vectors in Digital Gate Drivers Reviewed

Sai T., Miyazaki K., Obara H., Mannen T., Wada K., Omura I., Sakurai T., Takamiya M.

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC 2020-March 3096 - 3101 2020.03

Language：English Publishing type：Research paper (international conference proceedings)

An active gate driving is effective to solve the trade-off between the switching loss and the current/voltage overshoot of power transistors. The test cost in the conventional digital gate drivers with four variables, however, is high, because more than 2000 measurements are required to find an optimum gate driving vector out of 64 (~1.7 x 10 ) combinations [1]. To minimize the test cost, a stop-and-go gate drive with only one variable is proposed. The switching loss and the current/voltage overshoot in turn-on/off state of IGBT of the conventional gate drive [1] and the proposed stop-and-go gate drive are measured by using a 6-bit programmable digital gate driver IC across nine conditions including different load currents (20 A, 50 A, and 80 A) and temperatures (25 °C, 75 °C, and 125 °C), and they are compared. The performance degradation of the switching loss and the current/voltage overshoot in the proposed stop-and-go gate drive over the conventional gate drive with four variables [1] is less than 8 % and 25 % across the nine conditions in turn-on/off state respectively. 4 7

DOI： 10.1109/APEC39645.2020.9124356

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Bipolar Transistor Test Structures for Extracting　Minority Carrier Lifetime in IGBTs Reviewed

Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, and Toshiro Hiramoto

IEEE Transactions on Semiconductor Manufacturing 2020.02

IGBT current filamentation observation by segmented collector sensing under UIS condition Reviewed

Matsuura S., Tsukuda M., Omura I.

CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems 559 - 564 2020.01

Language：English Publishing type：Research paper (international conference proceedings)

Current filamentation during the avalanche period of insulated-gate bipolar transistors (IGBTs) has been investigated using various approaches including TCAD simulations and temperature distribution measurements, since the phenomena can be an origin of chip current capability lowering with the parasitic thyristor latching-up due to the strongly localized current. This paper reports, for the first time, the current filamentation is directly measured as collector currents of segmented metallization areas of an IGBT chip. The experimental results show that the filament moves across the segmented areas with couple of micro second as the transition time and the transitions are not identical for the repeated tests even the circuit condition is the same.

Scopus

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Dynamic current balancing of parallel connected IGBT devices using PCB sensor for integration in power modules Reviewed

Tripathi R.N., Tsukuda M., Omura I.

CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems 101 - 105 2020.01

Language：English Publishing type：Research paper (international conference proceedings)

Dynamic current balancing is a crucial factor for parallel connected devices. It has to be considered as a prominent issue concerning the high reliability and lifetime of the power module as well as the power electronic converter system. This paper presents, dynamic current balancing among the parallel-connected discrete IGBT devices using a tiny PCB sensor that can be integrated inside a power module for system miniaturization. The output of the tiny PCB sensor is used for current peak detection to perform gate delay compensation through feedback control. Moreover, the currents are also measured using Pearson current probe for authentication of measurement and system performance using PCB sensors.

Scopus

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Digital gate drive control method for active voltage balancing of series-connected IGBT devices Reviewed

Tripathi R.N., Arimoto T., Tsukuda M., Omura I.

CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems 269 - 273 2020.01

Language：English Publishing type：Research paper (international conference proceedings)

High voltage power generation and conversion are essential considering reduced system losses, consequently, lead to better power system efficiency. Series-connected power devices are used to address and satisfy the high voltage requirement of the system. However, unbalanced voltage stress distribution among the series-connected power devices is a vital concern considering the ageing of the devices, safe-operating-area (SOA) and system reliability. This paper presents, a digital gate drive control (DGDC) method for voltage balancing of series-connected IGBT devices. The proposed method dynamically controls the gate voltage to optimize the overshoot voltage as well as the voltage-stress distribution. The DGDC method is implemented for a three series-connected IGBT system to authenticate the performance.

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Detecting three-phase power inverter output currents by a single PCB current sensor Reviewed

Bat-Ochir B.O., Bayarkhuu B., Tsukuda M., Dugarjav B., Omura I.

CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems 106 - 109 2020.01

Language：English Publishing type：Research paper (international conference proceedings)

Measuring the current of a power conversion system is imperative. So, we have developed a new method of measuring a three-phase inverter’s currents of all loads with a single current sensor. We successfully tested this method on a computer simulation and an experimental setup. Which showed that the method can be integrated into power inverters. We proposed an inexpensive analog circuit suitable for capturing current information from a tiny PCB Rogowski coil. It measures the current of the power inverter’s DC supply line and resynthesizes all load currents separately. This way it will reduce the size and cost of a power conversion system’s current measuring devices.

Scopus

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Robust Gate Driving Vectors to Load Current and Temperature Variations for Digital Gate Drivers Reviewed

Toru Sai, Koutaro Miyazaki, Hidemine Obara, Tomoyuki Mannen, Keiji Wada, Ichiro Omura, Takayasu Sakurai and Makoto Takamiya

4th IEEE International Future Energy Electronics Conference (IFEEC 2019), Special Session 2019.11

Power energy cost reduction effects by applying optimized long-term storage battery operation strategy Reviewed

Yuasa K., Omura I., Ueshima M., Babasaki T.

8th International Conference on Renewable Energy Research and Applications, ICRERA 2019 107 - 112 2019.11

Language：English Publishing type：Research paper (international conference proceedings)

In this paper, we propose an optimized storage battery operation strategy by considering the long-term variability of the net load with photovoltaics. We derive the power energy cost reduction effects from the proposed strategy that was applied by numerical analysis. From the numerical analysis results, we report that the strategy is more advantageous than conventional strategies.

DOI： 10.1109/ICRERA47325.2019.8996953

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Optimized Storage Battery Operation Strategy by Considering Long-term Variabilitty of a Net Load with Photovoltaics Reviewed

Yuasa K., Ueshima M., Babasaki T., Omura I.

2019 IEEE 4th International Future Energy Electronics Conference, IFEEC 2019 2019.11

Language：English Publishing type：Research paper (international conference proceedings)

In this paper, we propose an optimized storage battery operation strategy by considering the long-term variability of net loads with photovoltaics. We derive the power energy cost reduction effects in the case of applying the proposed strategy under storage parity conditions by numerical analysis. From the results, we report that the proposed strategy is more advantageous than conventional methods.

DOI： 10.1109/IFEEC47410.2019.9014973

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Examination of correction method of long-term solar radiation forecasts of numerical weather prediction Reviewed

Ueshima M., Babasaki T., Yuasa K., Omura I.

8th International Conference on Renewable Energy Research and Applications, ICRERA 2019 113 - 117 2019.11

Language：English Publishing type：Research paper (international conference proceedings)

To optimize operation plans for storage batteries with solar power systems, it is necessary to predict solar radiation for up to one week with high accuracy. However, it is known that the further a prediction system forecasts into the future, the lower the prediction accuracy. In this paper, we report on the results of testing a method for correcting the solar radiation prediction value statistically from a numerical weather prediction model by using the tendency of past error occurrence for predicting seven days ahead.

DOI： 10.1109/ICRERA47325.2019.8997070

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Switching of 3300v scaled igbt by 5v gate drive Reviewed

Hiramoto T., Satoh K., Matsudai T., Saito W., Kakushima K., Hoshii T., Furukawa K., Watanabe M., Shigyo N., Wakabayashi H., Tsutsui K., Sarava T., Iwai H., Ogura A., Nishizawa S., Omura I., Ohash H., Itou K., Takakura T., Fukui M., Suzuki S., Takeuchi K., Tsukuda M., Numasawa Y.

Proceedings of International Conference on ASIC 2019.10

Language：English Publishing type：Research paper (international conference proceedings)

In this work, the switching of 3300V IGBTs by 5V gate drive voltage has been successfully demonstrated for the first time. IGBT was designed based on a scaling principle. Comparing with conventional 15V-driven non-scaled IGBTs, the tum-off tail current of the scaled devices significantly decreased. The improvement of E-{\mathrm{off}} vs V-{\mathrm{cesat}} relationship by 35% was achieved.

DOI： 10.1109/ASICON47005.2019.8983633

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Peak Minimisation based Gate Delay Compensation for Active Current Balancing of Parallel IGBT System Reviewed

Ravi Nath Tripathi, Masanori Tsukuda, Ichiro Omura

Microelectronics Reliability 101-101 113426 2019.09

Infrared image correlation for thermal stress analysis of power devices Reviewed

Akihiko Watanabe, Yoshiki Masuda and Ichiro Omura

Microelectronics Reliability 101-101 113414 2019.09

Development of fast short-circuit protection system for advanced IGBT Reviewed

M. Ichiki, T. Arimoto, S. Abe, M. Tsukuda, I. Omura

Microelectronics Reliability 101-101 113408 2019.09

Convolutional neural network (CNNs) based image diagnosis for failure analysis of power devices Reviewed

Akihiko Watanabe, Naoto Hirose, Hyoungseop Kim and Ichiro Omura

Microelectronics Reliability 101-101 113399 2019.09

Calculation of single event burnout failure rate for high voltage devices under satellite orbit without fitting parameters Reviewed

Sudo, M. Nagamatsu, T. Tsukuda, M. Omura, I.

Microelectronics Reliability 101-101 113396 2019.09

Evaluation of Carrier Recombination Lifetime in Silicon Epitaxial Layer by Open Circuit Voltage Decay Method Reviewed

S. Sasaki, N. Mitsugi, S. Samata, W. Manabe, M. Tsukuda, H. Y.-Kaneta, I. Omura

2019 International Conference on Solid State Devices and Materials 2019.09

Numerical Study of 4H-SiC PiN Diode to Enable Forward Bias Degradation Prediction Considering BPD-TED Conversion Position in the SiC Epitaxial Wafer Reviewed

Satoshi Torimi, Yoshiki Obiyama, Masanori Tsukuda and Ichiro Omura

2019 International Conference on Solid State Devices and Materials 2019.09

Active Voltage Balancing for Series Connected IGBT System using Gate Delay Control Reviewed

Ravi Nath Tripathi, Kouji Harasaki, Masanori Tsukuda, Ichiro Omura

2019 International Conference on Solid State Devices and Materials 2019.09

Load current and temperature dependent optimization of active gate driving vectors Reviewed

Sai T., Miyazaki K., Obara H., Mannen T., Wada K., Omura I., Takamiya M., Sakurai T.

2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019 3292 - 3297 2019.09

Language：English Publishing type：Research paper (international conference proceedings)

A load current and temperature dependent optimization of the active gate driving waveforms is proposed to always solve the trade-off between the switching loss and the current/voltage overshoot of power transistors under load current and temperature variations. The switching loss and the current/voltage overshoot in turn-on/off state of IGBT using optimized gate driving vectors obtained by an automatic optimization are measured by using a 6-bit programmable digital gate driver IC across nine conditions including different load currents (20 A, 50 A, and 80 A) and temperatures (25 °C, 75 °C, and 125 °C). They are compared with those with conventional single-step gate driving waveforms using an object function as a function of the normalized loss and overshoot. When the optimized gate driving vector at a typical operation point of (50 A, 25 °C) is reused in other eight conditions, the object functions at eight conditions are better or worse than those of the conventional single-step driving. In contrast, when the gate driving vector is optimized at each condition, the object functions at all eight conditions are better than those of the conventional single-step driving in both turn-on and turn-off states, which clarifies the necessity of the proposed optimization. To implement the proposed optimization, a lookup table based active gate controller, which provides a preset optimum driving vector depending on the load current and the temperature, will be effective.

DOI： 10.1109/ECCE.2019.8913103

Scopus

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Output-Current Measurement of a PWM Inverter with a Tiny PCB Rogowski Sensor Integrated into an IGBT Module Reviewed

Hasegawa K., Sho S., Tsukuda M., Omura I., Ichiki M., Kato T.

2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019 5707 - 5711 2019.09

Language：English Publishing type：Research paper (international conference proceedings)

Inverters used in motor-drive and grid-connected applications usually employ current sensors at the output terminal because they have to control the output current. Existing current sensors like the Hall sensor and the current transformer are a constraint to reduce the volume and cost of the inverter. This paper proposes an output-current measurement method of a PWM inverter using a tiny PCB sensor that is based on the so-called Rogowski coil and can be integrated into an IGBT module. The method utilizes the switching current of the low-side switch for reproducing the output current, which allows using the PCB sensor because the switching current consists of high-frequency components. The method uses a single PCB sensor per leg and takes the polarity of the output current into account. Experimental results using a half-bridge sinusoidal PWM inverter verify that the proposed method measures the output current including its fundamental frequency component, switching ripple one, and polarity.

DOI： 10.1109/ECCE.2019.8912662

Scopus

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3300V Scaled IGBTs Driven by 5V Gate Voltage Reviewed

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Sato, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohashi, and T. Hiramoto

The 31st IEEE International Symposium on Power Semiconductor Devices and ICs 2019.05

A Condition-Monitoring Method of DC-Link Capacitors Used in a High-Power Three-Phase PWM Inverter with an Evaluation Circuit Reviewed

K. Hasegawa, S. Nishizawa, and I. Omura

IEEJ Journal of Industry Applications 8 ( 3 ) 480 - 487 2019.05

Mutual inductance influence to switching speed and TDR measurements for separating self- and mutual inductances in the package Reviewed

H. Iida, K. Hasegawa, I. Omura

The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 503 - 506 2019.05

Analog Basis, Low-Cost Inverter Output Current Sensing with Tiny PCB Coil Implemented inside IPM Reviewed

Battuvshin Bayarkhuu, Bat-Otgon Bat-Ochir, Kazunori Hasegawa, Masanori Tsukuda, Bayasgalan Dugarjav, Ichiro Omura

The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 251 - 254 2019.05

Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT Reviewed

Tsukuda Masanori, Sudo Masaki, Hasegawa Kazunori, Abe Seiya, Saraya Takuya, Takakura Toshihiko, Fukui Munetoshi, Itou Kazuo, Suzuki Shinichi, Takeuchi Kiyoshi, Ninomiya Tamotsu, Hiramoto Toshiro, Omura Ichiro

The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 339 - 342 2019.05

Gate Waveform Optimization in Emergency Turn-Off of IGBT Using Digital Gate Driver Reviewed

Miyazaki K., Wada K., Omura I., Takamiya M., Sakurai T.

ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia 3292 - 3296 2019.05

Language：English Publishing type：Research paper (international conference proceedings)

IGBTs need to be immediately turned off when a short circuit occurs [1]. This paper discusses the optimized gate control in this emergency turn-off process. The optimized gate waveform minimizes the energy loss, hence the heat generation, while keeping the maximum collector-emitter voltage overshoot within a certain allowable value. The optimized waveform is found by theoretical analysis and is verified by measurements for the first time. Analytical expressions are derived for the optimized control, which explains well the experimental results. The optimized gate waveform is realized only by a digital gate driver (DGD)whose output drivability is programmable over 64 strength levels. The DGD decreases the energy loss by 22 % compared with the conventional resistor gate driver [2]-[4].

Scopus

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Load Current and Temperature Dependent Optimization of Active Gate Driving Vectors Reviewed International journal

Toru Sai, Koutaro Miyazaki, Hidemine Obara, Tomoyuki Mannen, Keiji Wada, Ichiro Omura, Makoto Takamiya, Takayasu Sakurai

The Eleventh Annual Energy Conversion Congress and Exposition　（ECCE） 2019.03

Vertical Bipolar Transistor Test Structure for Measuring　Minority Carrier Lifetime in IGBTs Reviewed

K. Takeuchi, M. Fukui, T. Saraya, K. Itou, T. Takakura, S. Suzuki, Y. Numasawa, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, I. Muneta, H. Wakabayashi, M. Tsukuda, A. Ogura, K. Tsutsui, H. Iwai,　S. Nishizawa, I. Omura6, H. Ohashi, and T. Hiramoto

ICMTS2019（32nd IEEE International Conference on Microelectronic Test Structures） 2019.03

Stop-and-Go Gate Drive Minimizing Test Cost to Find Optimum Gate Driving Vectors in Digital Gate Drivers Reviewed International journal

Toru Sai, Koutaro Miyazaki, Hidemine Obara, Tomoyuki Mannen, Keiji Wada, Ichiro Omura, Takayasu Sakurai and Makoto Takamiya

IEEE Applied Power Electronics Conference and Exposition (APEC) 2019.03

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss Reviewed

Saraya T., Itou K., Takakura T., Fukui M., Suzuki S., Takeuchi K., Tsukuda M., Numasawa Y., Satoh K., Matsudai T., Saito W., Kakushima K., Hoshii T., Furukawa K., Watanabe M., Shigyo N., Tsutsui K., Iwai H., Ogura A., Nishizawa S., Omura I., Ohashi H., Hiramoto T.

Technical Digest - International Electron Devices Meeting, IEDM 2018-December 8.4.1 - 8.4.4 2019.01

Language：English Publishing type：Research paper (international conference proceedings)

Functional trench-gated 1200V-10A class Si-IGBTs, designed based on a three dimensional (3D) scaling concept, were fabricated, and 5V gate voltage switching operation has been demonstrated for the first time. 33% reduction of turn-off loss and 100mV improvement of on-state voltage were achieved, while keeping 1.2kV forward blocking voltage.

DOI： 10.1109/IEDM.2018.8614491

Scopus

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Optimal double sided gate control of IGBT for lower turn-off loss and surge voltage suppression Reviewed

Harada S., Tsukuda M., Omura I.

CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems 2019.01

Language：English Publishing type：Research paper (international conference proceedings)

The current density of power semiconductor devices continues to increase and, carrier injection has been enhanced by several methods even though turn-off loss tends to be increased. In order to address this problem, we propose a double sided gate IGBT and optimal gate control method for lower turn-off loss. TCAD simulation numerically shows that the proposed IGBT successfully decreases turn-off loss. Furthermore, the turn-off loss is further decreased with optimal control of the double sided gate without surge voltage increase. In addition, we consider the effects of stray inductance on the performance of double sided gate IGBT.

Scopus

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Magnetic flux signal simulation with 16-channel sensor array to specify accurate IGBT current distribution Reviewed

Tsukuda M., Matsuo K., Tomonaga H., Okoda S., Noda R., Tashiro K., Omura I.

CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems 2019.01

Language：English Publishing type：Research paper (international conference proceedings)

Current crowding of IGBT and power diodes in a chip or among chips is a barrier to the realization of highly-reliable power modules and power electronics systems. Current crowding occurs because of stray inductance imbalance, difference of chip characteristics and temperature imbalance among chips. Although current crowding among IGBT or power diode chips has been analyzed by numerical simulation, no sensor with sufficiently high special resolution and fast measurement time has yet been developed. Therefore, we developed a 16-channel sensor array and demonstrated IGBT current distribution imaging. By using the developed simulation method for the sensor array, the accuracy of the magnetic flux signals was confirmed. In future work, we will apply the simulation method to specify the IGBT current distribution corresponding to the structure of bonding wire and other wiring.

Scopus

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Application-specific micro Rogowski coil for power modules -Design tool, novel coil pattern and demonstration- Reviewed

Koga M., Tsukuda M., Nakashima K., Omura I.

CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems 2019.01

Language：English Publishing type：Research paper (international conference proceedings)

We developed a printed circuit board “Rogowski coil” to improve the reliability of power modules and packages. For the design, we used a new tool for sensitivity and adopted a fishbone coil pattern to realize design sensitivity. The developed coil demonstrates flat sensitivity that is as good as that of commercialized current probes/sensors because the proposed coil pattern successfully cancels noise from an outside current with flat signal sensitivity by an inside current.

Scopus

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Envelop Tracking Based Embedded Current Measurement for Monitoring of IGBT and Power Converter System Reviewed International journal

Bat-Otgon Bat-Ochir, Battuvshin Bayarkhuu, Kazunori Hasegawa, Masanori Tsukuda, Bayasgalan Dugarjav, Ichiro Omura

Microelectronics Reliability ( 89-90 ) 500 - 504 2018.09

A fully digital feedback control of gate driver for current balancing of parallel connected power devices Reviewed International journal

R.N. Tripathi, M. Tsukuda, I. Omura

Microelectronics Reliability ( 89-90 ) 505 - 509 2018.09

Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena Reviewed International journal

M. Tsukuda, S. Abe, K. Hasegawa, T. Ninomiya, I. Omura

Microelectronics Reliability ( 89-90 ) 482 - 485 2018.09

A power cycling degradation inspector of power semiconductor devices Reviewed International journal

A. Watanabe, I. Omura

Microelectronics Reliability ( 89-90 ) 458 - 461 2018.09

ESR and capacitance monitoring of a dc-link capacitor used in a three-phase PWM inverter with a front-end diode rectifier Reviewed International journal

K. Hasegawa, S. Nishizawa, I. Omura

Microelectronics Reliability ( 89-90 ) 433 - 437 2018.09

Calorimetric Power-Loss Measurement of a High-Power Film Capacitor with Actual Ripple Current Generated by a PWM Inverter Reviewed International journal

Kazunori Hasegawa, Ichiro Omura

ECCE2018 (IEEE ENERGY CONVERSION CONGRESS & EXPO) 2018.09

Current Imbalance Monitoring in SiC-MOSFET under Unclamped Inductive Switching by Tiny PCB Rogowski Coil Reviewed International journal

Takaaki Arimoto, Masanori Tsukuda, Seiya Matsuura, Ichiro Omura

14th International Seminar on Power Semiconductors 2018.08

An Evaluation Circuit for DC-Link Capacitors Used in a High-Power Three-Phase Inverter with Condition Monitoring Reviewed

Hasegawa, K., Omura,I., Nishizawa, S.

2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018 1938 - 1942 2018.05

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET Reviewed

Kobayashi K., Sudo M., Omura I.

Japanese Journal of Applied Physics 57 ( 4 ) 2018.04

Language：English Publishing type：Research paper (international conference proceedings)

Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate-drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (C ), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for C curves as three divided components. Output charge (Q ) and stored energy (E ) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Q loss increased depending on switching frequency. This analysis reveals that Q may become a significant issue in next-generation high-efficiency FP-MOSFETs. oss oss oss oss oss oss

DOI： 10.7567/JJAP.57.04FR14

Scopus

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Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET Reviewed

2018.03

Current filament monitoring under unclamped inductive switching conditions on real IGBT interconnection Reviewed

2018.03

Power Loss Analysis of 60 V Trench Field-Plate MOSFETs utilizing Structure Based Capacitance Model for Automotive Application Reviewed

2018.03

Power loss analysis of 60 V trench field-Plate MOSFETs utilizing structure based capacitance model for automotive application Reviewed

Kobayashi K., Sudo M., Omura I.

CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems 122 - 127 2018.01

Language：English Publishing type：Research paper (international conference proceedings)

We propose a structure based capacitance model for output capacitance (Coss) and reverse transfer capacitance (Crss) in 60-V class source-field-plate (SFP) and gate-field-plate (GFP) MOSFETs. C-V curves obtained by the model showed good agreement with TCAD simulation. Output charge (Qoss), stored energy (Eoss) and turn-off waveforms also could be calculated very well. In assumption of 30 V, 70 A and 20 to 200 kHz switching operation, power losses related to the FP-MOSFET’s features were estimated by utilizing the model. Moreover, we compared advantages of both FP-MOSFETs for several use conditions.

Scopus

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Current filament monitoring under unclamped inductive switching conditions on real IGBT interconnection Reviewed

Tsukuda M., Arimoto T., Omura I.

CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems 430 - 434 2018.01

Language：English Publishing type：Research paper (international conference proceedings)

Destruction under unclamped inductive switching is typical, catastrophic destruction phenomena. We used our original printed circuit board Rogowski sensor and monitored current filaments in IGBT under unclamped inductive switching conditions at emitter pads of IGBT devices. The current filament varied a little by switching condition. Even with the same switching condition, the current varied a little from sample to sample. Temperature and photoemission monitoring was sufficient to analyse a major current filament under unclamped inductive switching condition from the standpoint of time resolution. The spatial resolution of current monitoring should be improved to monitor minor phenomena of current filaments.

Scopus

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スケーリングIGBTが拓くパワーエレクトロニクスの新しいパラダイム Reviewed

平本俊郎, 大村一郎

応用物理 2017.11

Structure Based Compact Model for Output Capacitance of Trench Field-Plate MOSFET to Enable Power Loss Prediction Reviewed

2017.09

Temperature Distribution Imaging inside Power Devices by Real-Time Simulation Reviewed

2017.09

Clamp type built-in current sensor using PCB in high-voltage power modules Reviewed

66-67 517 - 521 2017.09

Real-time imaging of temperature distribution inside a power device under a power cycling test Reviewed

66-67 490 - 494 2017.09

Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications Reviewed

66-67 465 - 469 2017.09

3D scaling for insulated gate bipolar transistors (IGBTs) with low V<inf>ce(sat)</inf> Reviewed

Tsutsui K., Kakushima K., Hoshii T., Nakajima A., Nishizawa S., Wakabayashi H., Muneta I., Sato K., Matsudai T., Saito W., Saraya T., Itou K., Fukui M., Suzuki S., Kobayashi M., Takakura T., Hiramoto T., Ogura A., Numasawa Y., Omura I., Ohashi H., Iwai H.

Proceedings of International Conference on ASIC 2017-October 1137 - 1140 2017.07

Language：English Publishing type：Research paper (international conference proceedings)

Three dimensionally (3D) scaled IGBTs that have a scaling factor of 3 (k=3) with respect to current commercial products (k=1) were fabricated for the first time. The scaling was applied to the lateral and vertical dimensions as well as the gate voltage. A significant decrease in ON resistance, - V reduction from 1.70 to 1.26 V - was experimentally confirmed for the 3D scaled IGBTs. ce(sat)

DOI： 10.1109/ASICON.2017.8252681

Scopus

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General-Purpose Clocked Gate Driver IC With Programmable 63-Level Drivability to Optimize Overshoot and Energy Loss in Switching by a Simulated Annealing Algorithm Reviewed

53 ( 3 ) 2350 - 2357 2017.07

Formulation of Single Event Burnout Failure Rate for High Voltage Devices in Satellite Electrical Power System Reviewed

2017.06

Current Distribution Based Power Module Screening by New Normal/Abnormal Classification Method, with Image Processing Reviewed

2017.06

New Power Module Integrating Output Current Measurement Function Reviewed

2017.06

An Evaluation Circuit for DC-Link Capacitors used in a Single-Phase PWM Inverter Reviewed

2017.05

High-performance vertical Si PiN diode by hole remaining mechanism Reviewed

Tsukuda M., Baba A., Shiba Y., Omura I.

Solid-State Electronics 129 22 - 28 2017.03

Language：English Publishing type：Research paper (scientific journal)

A novel diode with a unique trench shape is predicted by TCAD simulation to have high performance. The novel 600 V vertical PiN diode with hole pockets by the Bosch deep trench process shows a better trade-off curve between reverse recovery loss and forward voltage. The reverse recovery loss is reduced by half. In addition, the active chip size of the novel diode is reduced to two-thirds that of the conventional PiN diode in the same forward voltage. Thanks to the hole pockets with an electric field in the diagonal direction, the remaining hole suppresses the surge voltage with noise for high performance. In this paper, we specially focus on the analysis of phenomenon and the noise suppression mechanism during reverse recovery. The novel diode structure is a strong candidate when developing the fabrication process after silicon trench etching is established.

DOI： 10.1016/j.sse.2016.12.006

Scopus

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Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors Reviewed

63 ( 3 ) 856 - 873 2017.03

A New Output Current Measurement Method with Tiny PCB Sensors Capable of Being Embedded in an IGBT Module Reviewed

IEEE Trans. Power Electron 32 ( 3 ) 1707 - 1712 2017.03

A new output current measurement method with tiny PCB sensors capable of being embedded in an IGBT module Reviewed

Hasegawa K., Takahara S., Tabata S., Tsukuda M., Omura I.

IEEE Transactions on Power Electronics 32 ( 3 ) 1707 - 1712 2017.03

Language：English Publishing type：Research paper (scientific journal)

This paper proposes a new output current measuring method using tiny printed-circuit-board (PCB) current sensors. The method will make it possible to install the PCB current sensors in an insulated-gate bipolar transistor (IGBT) module. The PCB sensor picks up a switching current flowing through an IGBT chip, and then a combination of a digital circuit based on field-programmable gate array and an integrator circuit reproduces the output current of an inverter from the switching current. A proof-of-concept experimental verification is carried out using a buck converter, which verifies that the proposed method detects a dc component of the output current as well as a ripple component although the PCB sensor is based on the so-called Rogowski coil.

DOI： 10.1109/TPEL.2016.2606111

Scopus

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New paradigm for power electronics created by IGBT scaling Invited Reviewed

HIRAMOTO Toshiro, OMURA Ichiro

Oyo Buturi ( The Japan Society of Applied Physics ) 86 ( 11 ) 956 - 961 2017.01

Language：Japanese Publishing type：Article, review, commentary, editorial, etc. (scientific journal)

<p>IGBT (Insulated Gate Bipolar Transistor) scaling improves device performance and reduces the gate drive voltage, resulting in an integration with advanced CMOS VLSI. Based on the concept of IGBT scaling, our target is to establish a new paradigm for power electronics, where automatic optimization is realized for power device control by using the IoT (Internet of Things) and AI (Artificial Intelligence). In this article, the research background, the basic concepts, and a portion of the research achievements are described.</p>

DOI： 10.11470/oubutsu.86.11_956

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130007715469

New power module integrating output current measurement function Reviewed

Tabata S., Hasegawa K., Tsukuda M., Omura I.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 267 - 270 2017.01

Language：English Publishing type：Research paper (international conference proceedings)

This paper proposes a new power module concept that integrates output current measurement function to make inverters compact. The current measurement function is realized by tiny printed-circuit-board (PCB) Rogowski coils. The PCB Rogowski coil picks up a switching current flowing through an IGBT chip, and then a combination of a digital circuit based on a field-programmable-gate-array (FPGA) and an integrator circuit reproduces the output current of the inverter from the switching current. A major concern of the new power module is the effect of reverse recovery current of free-wheeling diodes because the reverse recovery current is superimposed on the switching current. This paper proposes a mitigating method of the reverse recovery current.

DOI： 10.23919/ISPSD.2017.7988911

Scopus

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Formulation of single event burnout failure rate for high voltage devices in satellite electrical power system Reviewed

Shiba Y., Dashdondog E., Sudo M., Omura I.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 167 - 170 2017.01

Language：English Publishing type：Research paper (international conference proceedings)

Single-Event Burnout (SEB) is a catastrophic failure in the high voltage devices that is initiated by the passage of particles during turn-off state. Previous papers reported that SEB failure rate increases sharply when applied voltage exceeds a certain threshold voltage. On the other hand, the high voltage devices for the artificial satellite have been increasing. In space, due to increase flux of particle, it is predicted that SEB failure rate will be higher. In this paper, we proposed the failure rate calculation method for high voltage devices based on SEB cross section and flux of particles. This formula can calculate the failure rate at space level and terrestrial level depending on the applied voltage of the high voltage devices.

DOI： 10.23919/ISPSD.2017.7988937

Scopus

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Current distribution based power module screening by new normal/abnormal classification method with image processing Reviewed

Tsukuda M., Yuki D., Tomonaga H., Kim H., Omura I.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 407 - 410 2017.01

Language：English Publishing type：Research paper (international conference proceedings)

We developed a screening equipment for ceramic substrate level power module of IGBT. The equipment realizes a new screening test with current distribution. The equipment acquires magnetic field signals over bonding wires and finally classifies to normal/abnormal module automatically. We established statistics based normal/abnormal classification with image processing. It is expected to be applied for screening in a production line and analysis to prevent the failure of power modules.

DOI： 10.23919/ISPSD.2017.7988970

Scopus

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An evaluation circuit for DC-link capacitors used in a single- phase PWM inverter Reviewed

Hasegawa K., Omura I., Nishizawa S.

PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management 2017.01

Language：English Publishing type：Research paper (international conference proceedings)

High-power conversion systems are based not only on three-phase inverters but also on singlephase inverters because modular multilevel cascade converters (MMCC) consist of half- or fullbridge single-phase converters. Their DC-link capacitors are a major constraint on the improvement of power density as well as of reliability. Evaluation of dc-link capacitors in terms of power loss, ageing, and failure rate will play an important role in the next-generation power converters. This paper presents an evaluation circuit for dc-link capacitors used in a high-power single-phase PWM inverter. The evaluation circuit produces a practical ripple current waveform and a dc bias voltage into a capacitor under test with a downscaled voltage-rating inverter, which is equivalent to those of the full-scale inverter. Theoretical analysis and experimental results verify the effectiveness of the evaluation circuit.

DOI： 10.1109/SBMicro.2017.7990846

Scopus

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High-performance vertical Si PiN diode by hole remaining mechanism Reviewed

129 22 - 28 2016.12

20-ns Short-Circuit Detection Scheme with High Variation-Tolerance based on Analog Delay Multiplier Circuit for Advanced IGBTs Reviewed International journal

Koutaro Miyazaki, Ichiro Omura, Makoto Takamiya and Takayasu Sakurai

IEEE Southern Power Electronics Conference (SPEC) 2016.12

Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT Reviewed

K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, and H. Iwai

2016 IEEE International Electron Devices Meeting 2016.12

Mutual Inductance Measurement for Power Device Package Using Time Domain Reflectometry Reviewed

2016.09

Failure rate calculation method for high power devices in space applications at low earth orbit Reviewed

64 502 - 506 2016.09

Micro PCB Rogowski coil for current monitoring and protection of high voltage power modules Reviewed

Masanori Tsukuda, Masahiro Koga, Kenta Nakashima, Ichiro Omura

64 479 - 483 2016.09

Temperature rise measurement for power-loss comparison of an aluminum electrolytic capacitor between sinusoidal and square-wave current injections Reviewed

64 98 - 100 2016.09

IGBT avalanche current filamentaion ratio: Precise simulations on mesh and structure effect Reviewed

Shiba Y., Omura I., Tsukuda M.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 2016-July 339 - 342 2016.07

Language：English Publishing type：Research paper (international conference proceedings)

Current filamentaion effect with dynamic avalanche during turn-off transient in IGBT has been discussed for years. In the prior papers, the possibility of device failure has been reported based on TCAD simulation and simulation results have shown that variety of filamentation phenomena exist for conditions assumed in each simulation. It is discussed in this paper, for the first time, that the relationship of filamentation current concentration strength to device design parameters and categorizes filamentation phenomena, introducing current filamentation ratio (CFR). In the paper, guidelines for appropriate mesh pattern selection are also described to ensure the validity of simulation results.

DOI： 10.1109/ISPSD.2016.7520847

Scopus

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Novel 600 v low reverse recovery loss vertical PiN diode with hole pockets by Bosch deep trench Reviewed

Tsukuda M., Baba A., Shiba Y., Omura I.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 2016-July 295 - 298 2016.07

Language：English Publishing type：Research paper (international conference proceedings)

The performance of a novel diode with characteristic trench shape is predicted by TCAD simulation. A novel 600 V vertical PiN diode with hole pockets by the Bosch deep trench process is proposed for a better trade-off curve between reverse recovery loss and forward voltage. The reverse recovery loss is reduced to a half. In addition, the active chip size of the novel diode is reduced to two-thirds that of the conventional PiN diode in the same forward voltage. The novel diode structure is a strong candidate when the simple fabrication process under development is established.

DOI： 10.1109/ISPSD.2016.7520836

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IGBT Avalanche Current Filamentaion Ratio: Precise Simulations on Mesh and Structure Effect Precise Simulations on Mesh and Structure Effect Reviewed

Yuji Shiba, Masanori Tsukuda and Ichiro Omura

339 - 342 2016.06

Novel 600 V Low Reverse Recovery Loss Vertical PiN Diode with Hole Pockets by Bosch Deep Trench Reviewed

295 - 298 2016.06

General-purpose clocked gate driver (CGD) IC with programmable 63-level drivability to reduce Ic overshoot and switching loss of various power transistors Reviewed

Miyazaki K., Abe S., Tsukuda M., Omura I., Wada K., Takamiya M., Sakurai T.

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC 2016-May 1640 - 1645 2016.05

Language：English Publishing type：Research paper (international conference proceedings)

A general-purpose clocked gate driver (CGD) IC to generate an arbitrary gate waveform is proposed to provide a universal platform for fine-grained gate waveform optimization handling various power transistors. The fabricated IC with 0.18μm BCD process has 63 PMOS and 63 NMOS driver transistors on a chip whose activation patterns are controlled by 6-bit digital signals and 25-MHz clock (= 40-ns time step control). In the 500-V switching measurements, the proposed CGD reduces the IC overshoot by 25% and 41% and the energy loss by 38% and 55% for Si-IGBT and SiC-MOSFET, respectively.

DOI： 10.1109/APEC.2016.7468086

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Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter Reviewed

IEEE Transactions on Industrial Electronics 63 ( 5 ) 2679 - 2687 2016.05

A New Evaluation Circuit with a Low-Voltage Inverter Intended for Capacitors Used in a High-Power Three-Phase Inverter Reviewed

K. Hasegawa, I. Omura, and S. Nishizawa

APEC2016 2016.03

Application-specific micro Rogowski coil for power modules -Design tool, novel coil pattern and demonstration- Reviewed

M. Koga, M. Tsukuda, K. Nakashima, I. Omura

International Conference on Integrated Power Electronics Systems 2016.03

Magnetic flux signal simulation with 16-channel sensor array to specify accurate IGBT current distribution Reviewed

M. Tsukuda, K. Matsuo, H. tomonaga, S. Okoda, R. Noda, K. Tashiro and I. Omura

International Conference on Integrated Power Electronics Systems 2016.03

Optimal double sided gate control of IGBT for lower turn-off loss and surge voltage suppression Reviewed

S. Harada, M. Tsukuda, I. Omura

International Conference on Integrated Power Electronics Systems 2016.03

20-ns Short-circuit detection scheme with high variation-tolerance based on analog delay multiplier circuit for advanced IGBTs Reviewed

2016.01

State-of-the-art Power Semiconductor Technology Invited

Omura Ichiro

The Proceedings of Mechanical Engineering Congress, Japan ( The Japan Society of Mechanical Engineers ) 2016 ( 0 ) 2016.01

Mutual inductance measurement for power device package using time domain reflectometry Reviewed

Hasegawa K., Wada K., Omura I.

ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings 2016.01

Language：English Publishing type：Research paper (international conference proceedings)

Stray inductance inside power device package will be a constraint on improvement of power density as well as switching frequency in power converters because the converters will suffer from electromagnetic interference (EMI)-related problems. This paper proposes a measurement method of mutual inductance for power device packages using time domain reflectometry. The method is characterized by introducing four-terminal measurement that distinguishes self and mutual inductances among collector, emitter, and gate terminals. A measurement fixture for a discrete IGBT is designed, constructed, and tested to ensure repeatability of the proposed method. Experimental results verifies the viability of the proposed method.

DOI： 10.1109/ECCE.2016.7855285

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Development of a supporting system for visual inspection of IGBT device based on statistical feature and complex multi-resolution analysis Reviewed

Yuki D., Kim H., Tan J.K., Ishikawa S., Tsukuda M., Omura I.

ICCAS 2015 - 2015 15th International Conference on Control, Automation and Systems, Proceedings 1551 - 1554 2015.12

Language：English Publishing type：Research paper (international conference proceedings)

Recently, the necessity of environmental regulation, low fuel consumption, and natural energy development is proposed by environmental issues. So the demands of power transistor devices are increased. But measurement technique of the current distribution is not keeping up with further miniaturized and integrated were needed in present condition. Now, therefore, ensuring security attended high functionalization is a subject. IGBT (Insulated Gate Bipolar Transistor) is the device that used for wide range of power devices. So we are developing imaging system used non-contact sensor arrays aimed to IGBT production line. In this paper, we propose a development of a supporting system for visual inspection of IGBT device based on statistical feature and complex multi-resolution analysis. First, this performs signal de-noising after entering well-known good data and measured data. Second, the statistical feature is expressed the difference between good data and measured data are calculated. Last, classifying of good and inferiority is performed based on the result of threshold processing. In the paper, we applied our algorithm to 28 sample data including 20 good data and 8 inferiority data.

DOI： 10.1109/ICCAS.2015.7364603

Scopus

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16-channel micro magnetic flux sensor array for IGBT current distribution measurement Reviewed

H. Tomonaga, M. Tsukuda, S. Okoda, R. Noda, K. Tashiro, I. Omura

Microelectronics Reliability 55 1357 - 1362 2015.08

Failure analysis of power devices based on real-time monitoring Reviewed

A. Watanabe, M. Tsukuda and I. Omura

Microelectronics Reliability 55 2032 - 2035 2015.08

High-throughput and full automatic DBC-module screening tester Reviewed

M. Tsukuda, H. Tomonaga, S. Okoda, R. Noda, K. Tashiro, I. Omura

Microelectronics Reliability 55 1363 - 1368 2015.08

New measurement base De-embedded CPU load model for power delivery network design Reviewed

Okano M., Watanabe K., Naitoh M., Omura I.

9th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2015-ECCE Asia 2288 - 2293 2015.07

Language：English Publishing type：Research paper (international conference proceedings)

CPU load model including on-chip wiring and package interconnection has been required for printed circuit board (PCB) design of digital products according to the improvement in the speed of CPU operation in recent years. Especially, accurate power delivery network (PDN) information inside CPU is indispensable for PCB design according to requirement of low-impedance and the broadband (from DC to GHz) from the inside of CPU to DC-DC converter. While the detailed impedance information inside CPUs is not disclosed to PCB board designers with the complicated back-end and front-end production design for CPU chip and package. This paper aims to establish new methodology to extract CPU load model with combination of measurement and simulation. The method is simple yet powerful for high-end CPU board design.

DOI： 10.1109/ICPE.2015.7168125

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New Measurement Base De-embedded CPU Load Model for Power Delivery Network Design Reviewed

Motochika Okano, Koji Watanabe, Masamichi Naitoh, and Ichiro Omura

9th International Conference on Power Electronics ECCE Asia (ICPE 2015-ECCE Asia) 2015.06

60 GHz Wireless Signal Transmitting Gate Driver for IGBT Reviewed

Kenichi Yamamoto, Fumio Ichihara, Kazunori Hasegawa, Masanori Tsukuda, and Ichiro Omura

Proc. of ISPSD2015 133 - 136 2015.05

Ultrafast lateral 600 V silicon SOI PiN diode with geometric traps for preventing waveform oscillation Reviewed

Masanori Tsukuda, Hironori Imaki, Ichiro Omura

Solid State Electronics 104 61 - 69 2014.12

Short-circuit protection for an IGBT with detecting the gate voltage and gate charge Reviewed

K. Hasegawa, K. Yamamoto, H. Yoshida, K. Hamada, M. Tsukuda, I. Omura

Microelectronics Reliability 54 1897 - 1900 2014.09

Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: part II Reviewed

J. Takaishi, S. Harada, M. Tsukuda, I. Omura

Microelectronics Reliability 54 1891 - 1896 2014.09

High Speed Real-time Temperature Monitoring System inside Power Devices Package Using Infrared Radiation Reviewed

N. Hirata, A. Watanabe and I. Omurae

The 2014 International Conference Solid State Devices and Materials 1016 - 1017 2014.09

Ultra-fast Lateral 600 V Silicon PiN Diode Superior to SiC-SBD Reviewed

Masanori Tsukuda, Hironori Imaki and Ichiro Omura

Proc. of ISPSD2014 31 - 31 2014.06

Rea-time failure monitoring system for high power IGBT under acceleration test up to 500A stress Reviewed

Akihiko Watanabe, Masanori Tsukuda and Ichiro Omura

Proc. of ISPSD2014 338 - 341 2014.06

Internal degradation monitoring of power devices during power cycling test Reviewed

Akihiko Watanabe, Masahiro Tsukuda and Ichiro Omura

International Conference on Integrated Power Electronics System 2014.02

High-throughput DBC-assembled IGBT screening for power module Reviewed

Masanori Tsukuda, Seiichi Okoda, Ryuzo Noda, Katsuji Tashiro and Ichiro Omura

International Conference on Integrated Power Electronics System 2014.02

Real-time failure monitoring system for high power IGBT under acceleration test up to 500 A stress Reviewed

Watanabe A., Omura I., Tsukuda M.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 338 - 341 2014.01

Language：English Publishing type：Research paper (international conference proceedings)

Real-time failure monitoring system for IGBT module was demonstrated under 500 A power cycling test. The system successfully captured internal phenomena occurred in interface regions of the device under test. Moreover, we proposed realtime failure analysis method by combining the real-time monitoring and image processing techniques. This failure analysis method enables to distinguish the place where degradation occurs in DUT and also trace internal degradation process to failure. © 2014 IEEE.

DOI： 10.1109/ISPSD.2014.6856045

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Ion-beam irradiation effect in the growth process of graphene on silicon carbide-on-insulator substrates Reviewed

Okano M., Edamoto D., Uchida K., Omura I., Ikari T., Nakao M., Naitoh M.

Materials Science Forum 778-780 1170 - 1173 2014.01

Language：English Publishing type：Research paper (international conference proceedings)

We investigated the effect of ion-beam irradiation of the 3C-SiC(111) surface on the growth of graphene by the SiC surface-decomposition method. When a 3C-SiC(111) surface was irradiated by 1 keV Ar ions at a dose of 4.5 × 10 cm in an ultra-high-vacuum chamber and then annealed at 1200 °C for 1 min, the formation of graphene layers was promoted in comparison with that in the absence of ion-beam irradiation. X-ray photoelectron spectroscopy studies showed that Ar ion bombardment of the 3C-SiC(111) caused breakage of surface bonds and helped Si atoms to desorb from the surface. © (2014) Trans Tech Publications, Switzerland. + 15 -2

DOI： 10.4028/www.scientific.net/MSF.778-780.1170

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Internal degradation monitoring of power devices during power cycling test Reviewed

Watanabe A., Tsukuda M., Omura I.

CIPS 2014 - 8th International Conference on Integrated Power Electronics Systems, Proceedings 2014.01

Language：English Publishing type：Research paper (international conference proceedings)

A technique to monitor internal degradation to failure of power devices in real time was proposed. Required components for this technique are (1) non-destructive inside imaging, (2) power stress control and (3) device cooling. We constructed the system with scanning acoustic tomography (SAT), DC power supply controlled by own made program and water cooling system, respectively. In the case of a TO-3P packaged MOSFET, propagation of internal degradations to failure was successfully recorded as time series data by using this system. At the present time, the system is modified for high power and large size IGBT modules.

Scopus

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High-throughput DBC-assembled IGBT screening for power module Reviewed

Tsukuda M., Okoda S., Noda R., Tashiro K., Omura I.

CIPS 2014 - 8th International Conference on Integrated Power Electronics Systems, Proceedings 2014.01

Language：English Publishing type：Research paper (international conference proceedings)

High-throughput DBC-assembled IGBT screening equipment for a production line is under development in order to prevent early failure of power modules. The equipment has been planning to have automatic GO/NO GO judgment technology by high-throughput measurement of current signal distribution with non-contact sensor arrays with small coils over the bonding wires of IGBT chips. Basic technology and Prototypes of a sensor, an analog amplifier, digital compensation technology, a test head and power circuit have been almost completed. The authors will fabricate the sensor arrays and develop GO/NO GO judgement technology with the integration of a basic technology.

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Real time degradation monitoring system for high power IGBT module under power cycling test Reviewed

A. Watanabe, M. Tsukuda and I. Omura

Microelectronics Reliability ( 53 ) 1692 - 1696 2013.10

IGBT chip current imaging system by scanning local magnetic field Reviewed

Microelectronics Reliability ( 53 ) 1409 - 1412 2013.10

Real Time Monitoring System for Internal Process to Failure of High Power IGBT Reviewed

Akihiko Watanabe, Masanori Tsukuda and Ichiro Omura

The 2013 International Conference on Solid State Devices and Materials 1046 - 1047 M-2-4 2013.09

High Speed Turn-on Gate Driving for 4.5kV IEGT without Increase in PiN Diode Recovery Current Reviewed

Yamato Miki, Makoto Mukunoki, Takashi Matsuyoshi, Masanori Tsukuda, and Ichiro Omura

Proc. of ISPSD 347 - 350 8-4 2013.05

Sub-micron Junction Termination for 1200V Class Devices toward CMOS Process Compatibility Reviewed

Kota Seto, Hironori Imaki, Junpei Takaishi, Masahiro Tanaka, Masanori Tsukuda and Ichiro Omura

Proc. of ISPSD 281 - 284 HV-P7 2013.05

Role of Simulation Technology for the Progress in Power Devices and Their Applications Invited Reviewed

Hiromichi Ohashi, Ichiro Omura

IEEE TRANSACTION ON ELECTRON DEVICES 60 ( 2 ) 528 - 536 2013.02

IGBT Scaling Principle Toward CMOS Compatible Wafer Processes Reviewed

Masahiro Tanaka, Ichiro Omura

Solid-State Electronics 800 118 - 123 2012.11

Real-time failure imaging system under power stress for power semiconductors using Scanning Acoustics Tomography(SAT) "jointly worked" Reviewed

Akihiko Watanabe, Ichiro Omura

Microelectronics Reliability 52 ( 9-10 ) 2081 - 2086 2012.09

Bonding Wire Current Measurement with Tiny Film Current Sensors Reviewed

Hidetoshi Hirai, Yuya Kasho, Masanori Tsukuda and Ichiro Omura

Proc. of ISPSD 287 - 290 2012.06

Scattering Parameter Approach to Power MOSFET Design for EMI Reviewed

Masanori Tsukuda, Keiichiro Kawakami and Ichiro Omura

Proc. of ISPSD 181 - 184 2012.06

Scaling Rule for Very Shallow Trench IGBT toward CMOS Process Compatibility Reviewed

Masahiro Tanaka and Ichiro Omura

Proc. of ISPSD 177 - 180 2012.06

Universal Trench Edge Termination Design Reviewed

Kota Seto, Ryu Kamibaba, Masanori Tsukuda and Ichiro Omura

Proc. of ISPSD 161 - 164 2012.06

"Design for EMI" approach on power PiN diode reverse recovery Reviewed

M. Tsukuda, K. Kawakami, K. Takahama, I. Omura

Microelectronics Reliability ( 51 ) 1972 - 1975 2011.10

Structure oriented compact model for advanced trench IGBTs without fitting Reviewed

M. Tanaka, I. Omura

Microelectronics Reliability ( 51 ) 1933 - 1937 2011.10

Tiny-scale ``stealth'' current sensor to probe power semiconductor device failure Reviewed

Yuya Kasho, Hidetoshi Hirai, Masanori Tsukuda, Ichiro Omura

Microelectronics Reliability ( 51 ) 1689 - 1692 2011.10

Full Digital Short Circuit Protection for Advanced IGBTs Reviewed

Takuya Tanimura, Kazufumi Yuasa and Ichiro Omura

Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's 2011.05

Ultra Low Loss Trench Gate PCI-PiN Diode with VF<350mV Reviewed

Motohiro Tsuda, Yasuaki Matsumoto, and Ichiro Omura

Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's 2011.05

Design of Trench Termination for High Voltage Devices Reviewed

Ryu Kamibaba,Kenichi Takahama,Ichiro Omura

ISPSD'10 2010.04

Challenge to the Barrier of Conduction Loss in PiNDiode toward VF<300 mV with Pulsed CarrierInjection Concept Reviewed

Yasuaki Matumoto,Kenichi Takahama,Ichiro Omura

ISPSD'10 2010.04

Numerical study on very high speed silicon PiN diodepossibilityfor power ICs in comparison with SiC-SBD Reviewed

Kenichi Takahama,Ichiro Omura

ISPSD'10 2010.04

Ultra High Speed Short Circuit Protection for IGBTwith Gate Charge Sensing Reviewed

Kazufumi Yuasa,Soh Nakamichi,Ichiro Omura

ISPSD'10 2010.04

Effect of Buffer Layer Structure on Drain Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs Reviewed

Wataru Saito,Takao Noda,Masahiko Kuraguchi,Yoshiharu Takada,Kunio Tsuda,Yasunobu Saito,Ichiro Omura,Masakazu Yamaguchi

IEEE-Trans on Electron Devices 56 ( 7 ) 2009.04

Non-Destructive Current Measurement for Surface Mounted Power MOSFET on VRM Board Using Magnetic Field Probing Technique Reviewed

Yoshiko Ikeda,Yoshihiro Yamaguchi,Yusuke Kawaguchi,Masakazu Yamaguchi,Ichiro Omura

IEEE 21st International Symposium on Power Semiconductor Devices & ICs ( 66-68 ) 2008.04

Demonstration of Resonant Inverter Circuit for Electrodeless Fluorescent Lamps Using High Voltage GaN-HEMT Reviewed

Wataru Saito,Tomokazu Domon,Ichiro Omura

IEEE Power Electronics Specialists Conference 3324 - 3329 2008.04

Critical IGBT Design Regarding EMI and Switching Losses Reviewed

M. Tsukuda,I. Omura

Proc of ISPSD 2008 185 - 188 2008.04

Demonstration of 13.56-MHz Class-E Amplifier Using a High-Voltage GaN Power-HEMT Reviewed

Saito,W.; Domon,T.; Omura,I.; Kuraguchi,M.; Takada,Y.; Tsuda,K.; Yamaguchi

Electron Device Letters, IEEE, 27 ( 5 ) 326 - 328 2006.04

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications Reviewed

Saito,W.; Takada,Y.; Kuraguchi,M.; Tsuda,K.; Omura,I.

Electron Devices, IEEE Transactions on 27 ( 2 ) 356 - 362 2006.04

High Voltage and High Switching Frequency Power-Supplies using a GaN-HEMT Reviewed

T. Domon,I. Omura,W.Saito,K. Tsuda

Compound Semiconductor Integrated Circuit Symposium 2006 IEEE 575 - 580 2006.04

Demonstration of High Output Power Density (50 W/cc) Converter using 600 V SJ-MOSFET and SiC-SBD Reviewed

M. Tsukada,I. Omura,W. Saito,T. Domon

4th International Conference on Integrated Power Electronics Systems 167 - 170 2006.04

A 15.5 mOhmcm2-680V Superjunction MOSFET Reduced On-Resistance by Lateral Pitch Narrowing Reviewed

W. Saito,I. Omura,S. Aida S. Koduki,M. Izumisawa,H. Yoshioka,H. Okumura,M. Yamaguchi and T. Ogura

Proc on IEEE ISPSD, 2006 293 - 296 2006.04

A New Stored-Charge-Controlled Over-Voltage Protection Concept for Wide RBSOA in High-Voltage Trench-IEGTs Reviewed

T. Ogura,K. Sugiyama,I. Omura,M. Yamaguchi,S. Teramae,N. Yamano and S. Iesaka

IEEE, ISPSD 2006 25 - 28 2006.04

High breakdown voltage (>1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process Reviewed

Saito,W.; Omura,I.; Aida,S.; Koduki,S.; Izumisawa,M.; Yoshioka,H.; Ogura,T.

Electron Devices, IEEE Transactions on 52 ( 10 ) 2317 - 2322 2005.04

Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage Reviewed

Saito W.,Kuraguchi M.,Takada Y.,Tsuda K,Omura I.,Ogura T

Electron Devices, IEEE Transactions on 52 ( 2 ) 159 - 164 2005.04

380v/1.9A GaN power-HEMT: current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier Reviewed

Saito W.,Kuraguchi M.,Takada Y.,Tsuda K.,Domon T.,Omura I.,Yamaguchi M.

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International 2005.04

Demonstration of High Power Density(30W/cc) Converter using 600V SiC-SBD and Low Impedance Gate Driver Reviewed

M. Tsukuda,I. Omura,T. Domon,W. Saito and T. Ogura

5th International Power Electronics Conference S32-4 2005.04

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Papers - OMURA Ichiro