Faculty Profiles - OMURA Ichiro

Papers - OMURA Ichiro

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"Single PCB sensor-based output current reproduction for three-phase inverter systems " Reviewed

B. Bayarkhuu, B. Bat-Ochir, B. Dugarjav, I. Omura,

Power Electronic Devices and Components 7 2024.04

Relationships between the Power Semiconductor Device Property, Recombination Lifetime, Carbon Related Defects, and Carbon Concentration of Silicon Wafer Reviewed

Shun Sasaki, Noritomo Mitsugi, Shuichi Samata, Wataru Manabe, Srikanth Gollapudi, Masanori Tsukuda and Ichiro Omura

JSAP Kyushu Chapter Annual Meeting 2023 /The 8th Asian Applied Physics Conference (Asian-APC) 2023.11

New equations to calculate carrier recombination lifetime of silicon epitaxial layer, based on open circuit voltage decay method Reviewed

Shun Sasaki, Noritomo Mitsugi, Shuichi Samata, Wataru Manabe, Srikanth Gollapudi, Masanori Tsukuda and Ichiro Omura

Japanese Journal of Applied Physics 62 2023.11

Short-circuit protection scheme with efficient soft turn-off for power modules Reviewed International journal

"He Du, Yandagkhuu Bayarsaikhan, Ichiro Omura,"

Microelectronics Reliability 150 2023.11

An Experimental Study on Switching Waveform Design with Gate Charge Control for Power MOSFETs Reviewed

Hirotaka Oomori, Ichiro Omura

Power Electronic Devices and Components 6 2023.10

Paralleling of IGBT Power Semiconductor Devices and Reliability Issues Reviewed International journal

Tripathi, Ravi Nath and Ichiro Omura

MDPI Electronics 2023 12 ( 8 ) 2023.09

Space radiation induced failure rate calculation method using energy deposition probability function for high-voltage semiconductor device Reviewed International journal

Luvsanbat Khurelbaatar, Turtogtokh Tumenjargall, Begzsuren Tumendemberel, Otgonbaatar Myagmar, Srikanth Gollapudi, Ichiro Omura, Erdenebaatar Dashdondog

Materialstoday Communications 35 105499 2023.06

Investigation of the Parasitic Inductance Influence on the Short-Circuit Behaviour of High Voltage IGBTs Reviewed International journal

He Du, Ichiro Omura, Shuhei Matsumoto, Takuro Arai

Proc.of 2023 IEEE Applied Power Electronics Conference and Exposition 2023.03

Extension of Zeller’s Silicon Power Device SEB Failure Rate Calculation method to Aviation Altitude Reviewed International journal

Srikanth Gollapudi, Ichiro Omura

Proc. of The 8th International Symposium on Advanced Science and Technology of Silicon Materials 2022.11

A TCAD Simulation Study for a New Technique to Calculate Carrier Recombination Lifetime Based on Open Circuit Voltage Decay Method Reviewed International journal

Shun Sasaki, Noritomo Mitsugi, Shuichi Samata, Srikanth Gollapudi, and Ichiro Omura

Proc. of The 8th International Symposium on Advanced Science and Technology of Silicon Materials 2022.11

Switching waveform design with gate charge control for power MOSFETs Reviewed International journal

Hirotaka Oomori, Ichiro Omura

Power Electronic Devices and Components 3 100018 2022.10

Parasitic oscillation analysis of trench IGBT during short-circuit type II using TCAD-based signal flow graph model Reviewed

Hiroshi Kono, Ichiro Omura

IEEE Transactions on Electron Devices 69 ( 10 ) 5705 - 5712 2022.10

Speed-Up Gate Pulse Method to Suppress Switching Loss and Surge Voltage for MOS Gate Power Device Reviewed International journal

Hiroya Egashira, Hirotaka Oomori, Ichiro Omura

The 34rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2022.05

Dynamic Vgs-Id monitoring system for junction temperature estimation for MOS gate power semiconductors Reviewed International journal

Yandagkhuu Bayarsaikhan, Ichiro Omura

The 34rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2022.05

Hybrid GaN-SiC Power Switches for Optimum Switching, Conduction and Free-Wheeling Performance Reviewed International journal

Battuvshin Bayarkhuu, Ravi Nath Tripathi, Ichiro Omura, Alberto Castellazzi

The 34rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2022.05

Study of parasitic oscillations in trench IGBT during short-circuit type II based on signal flow graph model Reviewed International journal

Hiroshi Kono and Ichiro Omura