Papers - OMURA Ichiro
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Role of Simulation Technology for the Progress in Power Devices and Their Applications Invited Reviewed
Hiromichi Ohashi, Ichiro Omura
IEEE TRANSACTION ON ELECTRON DEVICES 60 ( 2 ) 528 - 536 2013.02
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IGBT Scaling Principle Toward CMOS Compatible Wafer Processes Reviewed
Masahiro Tanaka, Ichiro Omura
Solid-State Electronics 800 118 - 123 2012.11
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Real-time failure imaging system under power stress for power semiconductors using Scanning Acoustics Tomography(SAT) "jointly worked" Reviewed
Akihiko Watanabe, Ichiro Omura
Microelectronics Reliability 52 ( 9-10 ) 2081 - 2086 2012.09
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Bonding Wire Current Measurement with Tiny Film Current Sensors Reviewed
Hidetoshi Hirai, Yuya Kasho, Masanori Tsukuda and Ichiro Omura
Proc. of ISPSD 287 - 290 2012.06
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Scattering Parameter Approach to Power MOSFET Design for EMI Reviewed
Masanori Tsukuda, Keiichiro Kawakami and Ichiro Omura
Proc. of ISPSD 181 - 184 2012.06
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Scaling Rule for Very Shallow Trench IGBT toward CMOS Process Compatibility Reviewed
Masahiro Tanaka and Ichiro Omura
Proc. of ISPSD 177 - 180 2012.06
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Universal Trench Edge Termination Design Reviewed
Kota Seto, Ryu Kamibaba, Masanori Tsukuda and Ichiro Omura
Proc. of ISPSD 161 - 164 2012.06
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"Design for EMI" approach on power PiN diode reverse recovery Reviewed
M. Tsukuda, K. Kawakami, K. Takahama, I. Omura
Microelectronics Reliability ( 51 ) 1972 - 1975 2011.10
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Structure oriented compact model for advanced trench IGBTs without fitting Reviewed
M. Tanaka, I. Omura
Microelectronics Reliability ( 51 ) 1933 - 1937 2011.10
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Tiny-scale ``stealth'' current sensor to probe power semiconductor device failure Reviewed
Yuya Kasho, Hidetoshi Hirai, Masanori Tsukuda, Ichiro Omura
Microelectronics Reliability ( 51 ) 1689 - 1692 2011.10
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Full Digital Short Circuit Protection for Advanced IGBTs Reviewed
Takuya Tanimura, Kazufumi Yuasa and Ichiro Omura
Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's 2011.05
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Ultra Low Loss Trench Gate PCI-PiN Diode with VF<350mV Reviewed
Motohiro Tsuda, Yasuaki Matsumoto, and Ichiro Omura
Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's 2011.05
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Design of Trench Termination for High Voltage Devices Reviewed
Ryu Kamibaba,Kenichi Takahama,Ichiro Omura
ISPSD'10 2010.04
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Challenge to the Barrier of Conduction Loss in PiNDiode toward VF<300 mV with Pulsed CarrierInjection Concept Reviewed
Yasuaki Matumoto,Kenichi Takahama,Ichiro Omura
ISPSD'10 2010.04
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Numerical study on very high speed silicon PiN diodepossibilityfor power ICs in comparison with SiC-SBD Reviewed
Kenichi Takahama,Ichiro Omura
ISPSD'10 2010.04
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Ultra High Speed Short Circuit Protection for IGBTwith Gate Charge Sensing Reviewed
Kazufumi Yuasa,Soh Nakamichi,Ichiro Omura
ISPSD'10 2010.04
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Effect of Buffer Layer Structure on Drain Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs Reviewed
Wataru Saito,Takao Noda,Masahiko Kuraguchi,Yoshiharu Takada,Kunio Tsuda,Yasunobu Saito,Ichiro Omura,Masakazu Yamaguchi
IEEE-Trans on Electron Devices 56 ( 7 ) 2009.04
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Non-Destructive Current Measurement for Surface Mounted Power MOSFET on VRM Board Using Magnetic Field Probing Technique Reviewed
Yoshiko Ikeda,Yoshihiro Yamaguchi,Yusuke Kawaguchi,Masakazu Yamaguchi,Ichiro Omura
IEEE 21st International Symposium on Power Semiconductor Devices & ICs ( 66-68 ) 2008.04
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Demonstration of Resonant Inverter Circuit for Electrodeless Fluorescent Lamps Using High Voltage GaN-HEMT Reviewed
Wataru Saito,Tomokazu Domon,Ichiro Omura
IEEE Power Electronics Specialists Conference 3324 - 3329 2008.04
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Critical IGBT Design Regarding EMI and Switching Losses Reviewed
M. Tsukuda,I. Omura
Proc of ISPSD 2008 185 - 188 2008.04