Faculty Profiles - OMURA Ichiro

Papers - OMURA Ichiro

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Application-specific micro Rogowski coil for power modules -Design tool, novel coil pattern and demonstration- Reviewed

Koga M., Tsukuda M., Nakashima K., Omura I.

CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems 2019.01

Language：English Publishing type：Research paper (international conference proceedings)

We developed a printed circuit board “Rogowski coil” to improve the reliability of power modules and packages. For the design, we used a new tool for sensitivity and adopted a fishbone coil pattern to realize design sensitivity. The developed coil demonstrates flat sensitivity that is as good as that of commercialized current probes/sensors because the proposed coil pattern successfully cancels noise from an outside current with flat signal sensitivity by an inside current.

Scopus

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Envelop Tracking Based Embedded Current Measurement for Monitoring of IGBT and Power Converter System Reviewed International journal

Bat-Otgon Bat-Ochir, Battuvshin Bayarkhuu, Kazunori Hasegawa, Masanori Tsukuda, Bayasgalan Dugarjav, Ichiro Omura

Microelectronics Reliability ( 89-90 ) 500 - 504 2018.09

A fully digital feedback control of gate driver for current balancing of parallel connected power devices Reviewed International journal

R.N. Tripathi, M. Tsukuda, I. Omura

Microelectronics Reliability ( 89-90 ) 505 - 509 2018.09

Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena Reviewed International journal

M. Tsukuda, S. Abe, K. Hasegawa, T. Ninomiya, I. Omura

Microelectronics Reliability ( 89-90 ) 482 - 485 2018.09

A power cycling degradation inspector of power semiconductor devices Reviewed International journal

A. Watanabe, I. Omura

Microelectronics Reliability ( 89-90 ) 458 - 461 2018.09

ESR and capacitance monitoring of a dc-link capacitor used in a three-phase PWM inverter with a front-end diode rectifier Reviewed International journal

K. Hasegawa, S. Nishizawa, I. Omura

Microelectronics Reliability ( 89-90 ) 433 - 437 2018.09

Calorimetric Power-Loss Measurement of a High-Power Film Capacitor with Actual Ripple Current Generated by a PWM Inverter Reviewed International journal

Kazunori Hasegawa, Ichiro Omura

ECCE2018 (IEEE ENERGY CONVERSION CONGRESS & EXPO) 2018.09

Current Imbalance Monitoring in SiC-MOSFET under Unclamped Inductive Switching by Tiny PCB Rogowski Coil Reviewed International journal

Takaaki Arimoto, Masanori Tsukuda, Seiya Matsuura, Ichiro Omura

14th International Seminar on Power Semiconductors 2018.08

An Evaluation Circuit for DC-Link Capacitors Used in a High-Power Three-Phase Inverter with Condition Monitoring Reviewed

Hasegawa, K., Omura,I., Nishizawa, S.

2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018 1938 - 1942 2018.05

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET Reviewed

Kobayashi K., Sudo M., Omura I.

Japanese Journal of Applied Physics 57 ( 4 ) 2018.04

Language：English Publishing type：Research paper (international conference proceedings)

Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate-drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (C ), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for C curves as three divided components. Output charge (Q ) and stored energy (E ) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Q loss increased depending on switching frequency. This analysis reveals that Q may become a significant issue in next-generation high-efficiency FP-MOSFETs. oss oss oss oss oss oss

DOI： 10.7567/JJAP.57.04FR14

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85044467697&origin=inward

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET Reviewed

2018.03

Current filament monitoring under unclamped inductive switching conditions on real IGBT interconnection Reviewed

2018.03

Power Loss Analysis of 60 V Trench Field-Plate MOSFETs utilizing Structure Based Capacitance Model for Automotive Application Reviewed

2018.03

Power loss analysis of 60 V trench field-Plate MOSFETs utilizing structure based capacitance model for automotive application Reviewed

Kobayashi K., Sudo M., Omura I.

CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems 122 - 127 2018.01

Language：English Publishing type：Research paper (international conference proceedings)

We propose a structure based capacitance model for output capacitance (Coss) and reverse transfer capacitance (Crss) in 60-V class source-field-plate (SFP) and gate-field-plate (GFP) MOSFETs. C-V curves obtained by the model showed good agreement with TCAD simulation. Output charge (Qoss), stored energy (Eoss) and turn-off waveforms also could be calculated very well. In assumption of 30 V, 70 A and 20 to 200 kHz switching operation, power losses related to the FP-MOSFET’s features were estimated by utilizing the model. Moreover, we compared advantages of both FP-MOSFETs for several use conditions.

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85085735535&origin=inward

Current filament monitoring under unclamped inductive switching conditions on real IGBT interconnection Reviewed

Tsukuda M., Arimoto T., Omura I.

CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems 430 - 434 2018.01

Language：English Publishing type：Research paper (international conference proceedings)

Destruction under unclamped inductive switching is typical, catastrophic destruction phenomena. We used our original printed circuit board Rogowski sensor and monitored current filaments in IGBT under unclamped inductive switching conditions at emitter pads of IGBT devices. The current filament varied a little by switching condition. Even with the same switching condition, the current varied a little from sample to sample. Temperature and photoemission monitoring was sufficient to analyse a major current filament under unclamped inductive switching condition from the standpoint of time resolution. The spatial resolution of current monitoring should be improved to monitor minor phenomena of current filaments.

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85080581925&origin=inward

スケーリングIGBTが拓くパワーエレクトロニクスの新しいパラダイム Reviewed

平本俊郎, 大村一郎

応用物理 2017.11

Structure Based Compact Model for Output Capacitance of Trench Field-Plate MOSFET to Enable Power Loss Prediction Reviewed

2017.09

Temperature Distribution Imaging inside Power Devices by Real-Time Simulation Reviewed

2017.09

Clamp type built-in current sensor using PCB in high-voltage power modules Reviewed

66-67 517 - 521 2017.09

Real-time imaging of temperature distribution inside a power device under a power cycling test Reviewed

66-67 490 - 494 2017.09

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Papers - OMURA Ichiro