Faculty Profiles - OMURA Ichiro

Papers - OMURA Ichiro

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Failure rate calculation method for high power devices in space applications at low earth orbit Reviewed

64 502 - 506 2016.09

Micro PCB Rogowski coil for current monitoring and protection of high voltage power modules Reviewed

Masanori Tsukuda, Masahiro Koga, Kenta Nakashima, Ichiro Omura

64 479 - 483 2016.09

Temperature rise measurement for power-loss comparison of an aluminum electrolytic capacitor between sinusoidal and square-wave current injections Reviewed

64 98 - 100 2016.09

IGBT avalanche current filamentaion ratio: Precise simulations on mesh and structure effect Reviewed

Shiba Y., Omura I., Tsukuda M.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 2016-July 339 - 342 2016.07

Language：English Publishing type：Research paper (international conference proceedings)

Current filamentaion effect with dynamic avalanche during turn-off transient in IGBT has been discussed for years. In the prior papers, the possibility of device failure has been reported based on TCAD simulation and simulation results have shown that variety of filamentation phenomena exist for conditions assumed in each simulation. It is discussed in this paper, for the first time, that the relationship of filamentation current concentration strength to device design parameters and categorizes filamentation phenomena, introducing current filamentation ratio (CFR). In the paper, guidelines for appropriate mesh pattern selection are also described to ensure the validity of simulation results.

DOI： 10.1109/ISPSD.2016.7520847

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84982182689&origin=inward

Novel 600 v low reverse recovery loss vertical PiN diode with hole pockets by Bosch deep trench Reviewed

Tsukuda M., Baba A., Shiba Y., Omura I.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 2016-July 295 - 298 2016.07

Language：English Publishing type：Research paper (international conference proceedings)

The performance of a novel diode with characteristic trench shape is predicted by TCAD simulation. A novel 600 V vertical PiN diode with hole pockets by the Bosch deep trench process is proposed for a better trade-off curve between reverse recovery loss and forward voltage. The reverse recovery loss is reduced to a half. In addition, the active chip size of the novel diode is reduced to two-thirds that of the conventional PiN diode in the same forward voltage. The novel diode structure is a strong candidate when the simple fabrication process under development is established.

DOI： 10.1109/ISPSD.2016.7520836

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84982170348&origin=inward

IGBT Avalanche Current Filamentaion Ratio: Precise Simulations on Mesh and Structure Effect Precise Simulations on Mesh and Structure Effect Reviewed

Yuji Shiba, Masanori Tsukuda and Ichiro Omura

339 - 342 2016.06

Novel 600 V Low Reverse Recovery Loss Vertical PiN Diode with Hole Pockets by Bosch Deep Trench Reviewed

295 - 298 2016.06

General-purpose clocked gate driver (CGD) IC with programmable 63-level drivability to reduce Ic overshoot and switching loss of various power transistors Reviewed

Miyazaki K., Abe S., Tsukuda M., Omura I., Wada K., Takamiya M., Sakurai T.

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC 2016-May 1640 - 1645 2016.05

Language：English Publishing type：Research paper (international conference proceedings)

A general-purpose clocked gate driver (CGD) IC to generate an arbitrary gate waveform is proposed to provide a universal platform for fine-grained gate waveform optimization handling various power transistors. The fabricated IC with 0.18μm BCD process has 63 PMOS and 63 NMOS driver transistors on a chip whose activation patterns are controlled by 6-bit digital signals and 25-MHz clock (= 40-ns time step control). In the 500-V switching measurements, the proposed CGD reduces the IC overshoot by 25% and 41% and the energy loss by 38% and 55% for Si-IGBT and SiC-MOSFET, respectively.

DOI： 10.1109/APEC.2016.7468086

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84973620738&origin=inward

Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter Reviewed

IEEE Transactions on Industrial Electronics 63 ( 5 ) 2679 - 2687 2016.05

A New Evaluation Circuit with a Low-Voltage Inverter Intended for Capacitors Used in a High-Power Three-Phase Inverter Reviewed

K. Hasegawa, I. Omura, and S. Nishizawa

APEC2016 2016.03

Application-specific micro Rogowski coil for power modules -Design tool, novel coil pattern and demonstration- Reviewed

M. Koga, M. Tsukuda, K. Nakashima, I. Omura

International Conference on Integrated Power Electronics Systems 2016.03

Magnetic flux signal simulation with 16-channel sensor array to specify accurate IGBT current distribution Reviewed

M. Tsukuda, K. Matsuo, H. tomonaga, S. Okoda, R. Noda, K. Tashiro and I. Omura

International Conference on Integrated Power Electronics Systems 2016.03

Optimal double sided gate control of IGBT for lower turn-off loss and surge voltage suppression Reviewed

S. Harada, M. Tsukuda, I. Omura

International Conference on Integrated Power Electronics Systems 2016.03

20-ns Short-circuit detection scheme with high variation-tolerance based on analog delay multiplier circuit for advanced IGBTs Reviewed

2016.01

State-of-the-art Power Semiconductor Technology Invited

Omura Ichiro

The Proceedings of Mechanical Engineering Congress, Japan ( The Japan Society of Mechanical Engineers ) 2016 ( 0 ) 2016.01

Mutual inductance measurement for power device package using time domain reflectometry Reviewed

Hasegawa K., Wada K., Omura I.

ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings 2016.01

Language：English Publishing type：Research paper (international conference proceedings)

Stray inductance inside power device package will be a constraint on improvement of power density as well as switching frequency in power converters because the converters will suffer from electromagnetic interference (EMI)-related problems. This paper proposes a measurement method of mutual inductance for power device packages using time domain reflectometry. The method is characterized by introducing four-terminal measurement that distinguishes self and mutual inductances among collector, emitter, and gate terminals. A measurement fixture for a discrete IGBT is designed, constructed, and tested to ensure repeatability of the proposed method. Experimental results verifies the viability of the proposed method.

DOI： 10.1109/ECCE.2016.7855285

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85015442646&origin=inward

Development of a supporting system for visual inspection of IGBT device based on statistical feature and complex multi-resolution analysis Reviewed

Yuki D., Kim H., Tan J.K., Ishikawa S., Tsukuda M., Omura I.

ICCAS 2015 - 2015 15th International Conference on Control, Automation and Systems, Proceedings 1551 - 1554 2015.12

Language：English Publishing type：Research paper (international conference proceedings)

Recently, the necessity of environmental regulation, low fuel consumption, and natural energy development is proposed by environmental issues. So the demands of power transistor devices are increased. But measurement technique of the current distribution is not keeping up with further miniaturized and integrated were needed in present condition. Now, therefore, ensuring security attended high functionalization is a subject. IGBT (Insulated Gate Bipolar Transistor) is the device that used for wide range of power devices. So we are developing imaging system used non-contact sensor arrays aimed to IGBT production line. In this paper, we propose a development of a supporting system for visual inspection of IGBT device based on statistical feature and complex multi-resolution analysis. First, this performs signal de-noising after entering well-known good data and measured data. Second, the statistical feature is expressed the difference between good data and measured data are calculated. Last, classifying of good and inferiority is performed based on the result of threshold processing. In the paper, we applied our algorithm to 28 sample data including 20 good data and 8 inferiority data.

DOI： 10.1109/ICCAS.2015.7364603

Scopus

Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84966269121&origin=inward

16-channel micro magnetic flux sensor array for IGBT current distribution measurement Reviewed

H. Tomonaga, M. Tsukuda, S. Okoda, R. Noda, K. Tashiro, I. Omura

Microelectronics Reliability 55 1357 - 1362 2015.08

Failure analysis of power devices based on real-time monitoring Reviewed

A. Watanabe, M. Tsukuda and I. Omura

Microelectronics Reliability 55 2032 - 2035 2015.08

High-throughput and full automatic DBC-module screening tester Reviewed

M. Tsukuda, H. Tomonaga, S. Okoda, R. Noda, K. Tashiro, I. Omura

Microelectronics Reliability 55 1363 - 1368 2015.08

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Papers - OMURA Ichiro