Updated on 2024/05/14

 
NAITOH Masamichi
 
Scopus Paper Info  
Total Paper Count: 0  Total Citation Count: 0  h-index: 2

Citation count denotes the number of citations in papers published for a particular year.

Affiliation
Faculty of Engineering Department of Electrical and Electronic Engineering
Job
Professor
E-mail
メールアドレス
Fax
+81-93-884-3266
External link

Research Interests

  • Scanning tunneling microscopy

  • Carbon nanotube

  • Graphene

  • Bismuth

  • Hydrogen adsorption

  • Silicon

  • Silicon carbide

  • Self-assembly

  • Surface modification

  • Semiconductor surface

Research Areas

  • Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  • Nanotechnology/Materials / Nanomaterials

Undergraduate Education

  • 1989.03   Osaka University   Faculty of Engineering   Department of Electronics Engineering   Graduated   Japan

Post Graduate Education

  • 1994.03   Osaka University   Graduate School, Division of Engineering   Electronics Engineering   Doctoral Program   Completed   Japan

  • 1991.03   Osaka University   Graduate School, Division of Engineering   Electronics Engineering   Master's Course   Completed   Japan

Degree

  • Osaka University  -  Doctor of Engineering   1994.03

Biography in Kyutech

  • 2022.04
    -
    2024.03
     

    Kyushu Institute of Technology   Faculty of Engineering   Department of Electrical and Electronic Engineering  

  • 2022.04
    -
    2024.03
     

    Kyushu Institute of Technology   Faculty of Engineering  

  • 2017.04
     

    Kyushu Institute of Technology   Faculty of Engineering   Department of Electrical and Electronic Engineering   Professor  

  • 2013.04
    -
    2017.03
     

    Kyushu Institute of Technology   Graduate School of Life Science and Systems Engineering   Department of Biological Functions and Engineering   Professor  

Academic Society Memberships

  • 2018.04   The Japan Society of Vacuum and Surface Science   Japan

  • 2013.04 - 2015.03   北九州学術研究都市 産学連携フェア実行委員会   Japan

  • 2003.06 - 2018.03   The Surface Science Society of Japan   Japan

  • 2001.07 - 2018.03   The Vacuum Society of Japan   Japan

  • 1990.11 - 2017.12   The Physical Society of Japan   Japan

  • 1989.08   The Japan Society of Applied Physics   Japan

▼display all

Papers

  • Molybdenum disulfide homogeneous junction diode fabrication and rectification characteristics Reviewed International journal

    Wei Li, Jeng-Yu Ke, Yun-Xuan Ou-Yang, Ying-Xuan Lin, Ching-Hwa Ho, Kuei-Yi Lee, Shunjiro Fujii, Shin-ichi Honda, Hideaki Okado, Masamichi Naitoh

    Japanese Journal of Applied Physics ( The Japan Society of Applied Physics )   61 ( 8 )   086504   8 pages   2022.08

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.35848/1347-4065/ac7fcf

    DOI: 10.35848/1347-4065/ac7fcf

  • Electronic and structural properties of H-intercalated graphene-SiC(0001) interface Reviewed

    J. Ishii, S. Matsushima, M. Naitoh

    Japanese Journal of Applied Physics   58 ( 3 )   035001   5 pages   2019.03

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.7567/1347-4065/aafb4a

  • Effect of ion-beam irradiation on the epitaxial growth of graphene via the SiC surface decomposition method Reviewed

    J. Ishii, Y. Miyawaki, T. Yamasaki, T. Ikari, M. Naitoh

    Japanese Journal of Applied Physics   56   085104   4 pages   2017.07

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.7567/JJAP.56.085104

  • The thermal radiation effect of substrate on nano-microsized particles levitating in low-pressure reactive plasmas Reviewed

    Tatsuzo Nagai, Masamichi Naitoh, Fumiya Shoji

    Applied Materials Today   7   185 - 189   2017.06

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1016/j.apmt.2017.02.007

  • Electronic structure of MePc/Si(100) surface studied using metastable-atom induced electron spectroscopy Reviewed

    T. Ikari, K. Matsuo, S. Uesugi, D. Todo, J. Ishii, M. Naitoh

    e-Journal of Surface Science and Nanotechnology   14   141 - 143   2016.05

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1380/ejssnt.2016.141

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    CiNii Article

    Other Link: http://www.sssj.org/ejssnt/

  • Growth of graphene on SiC(111) surfaces via- ion beam irradiation Reviewed

    J. Ishii, Y. Miyawaki, N. Tsuboi, T. Ikari, M. Naitoh

    e-Journal of Surface Science and Nanotechnology   14   121 - 124   2016.04

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1380/ejssnt.2016.121

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    Other Link: http://www.sssj.org/ejssnt/

  • First-principles calculation study of epitaxial graphene layer on 4H-SiC (0001) surface Reviewed

    J. Ishii, S. Matsushima, H. Nakamura, T. Ikari, M.Naitoh

    e-Journal of Surface Science and Nanotechnology   14   107 - 112   2016.04

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1380/ejssnt.2016.107

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    Other Link: http://www.sssj.org/ejssnt/

  • Oxidation at Cs pre-Adsorbed Si/6H-SiC(0001)-(3 × 3) reconstructed surfaces studied using metastable-induced electron spectroscopy Reviewed

    T. Ikari, T. Nakamura, K. Hirayama, K. Muraoka, J. Ishii, M. Naitoh

    e-Journal of Surface Science and Nanotechnology   14   103 - 106   2016.04

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1380/ejssnt.2016.103

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    Other Link: http://www.sssj.org/ejssnt/

  • New measurement base de-embedded CPU load model for power delivery network design Reviewed

    M. Okano, K. Watanabe, M. Naitoh, I. Omura

    9th International Conference on Power Electronics-ECCE Asia   2288 - 2293   2015.06

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    Language:English   Publishing type:Research paper (international conference proceedings)

    DOI: 10.1109/ICPE.2015.7168125

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  • Growth Control of Carbon Nanotubes Using Ion-Beam Irradiation Effect in the SiC Surface Decomposition Method, jointly worked Reviewed

    Journal of the Vacuum Society of Japan   57 ( 5 )   182 - 184   2014.05

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    Authorship:Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)

    DOI: 10.3131/jvsj2.57.182

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  • Growth of Spherical Carbon Particles in the Vertically Excited Columnar Plasma Sheath, jointly worked Reviewed

    Journal of the Vacuum Society of Japan   57 ( 4 )   155 - 158   2014.04

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    Authorship:Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)

    DOI: 10.3131/jvsj2.57.155

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  • A Study of the Graphene Formation on Silicon Carbide-on-Iinsulator Substrates, jointly worked Reviewed

    Journal of the Vacuum Society of Japan   57 ( 4 )   144 - 146   2014.04

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    Authorship:Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)

    DOI: 10.3131/jvsj2.57.144

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  • Ion-beam irradiation effect in the growth process of graphene on silicon carbide-on-insulator substrates Reviewed

    M. Okano, D. Edamoto, K. Uchida, I. Omura, T. Ikari, M. Nakao, M. Naitoh

    Materials Science Forum   2014.02

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.4028/www.scientific.net/MSF.778-780.1170

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  • Self-organized formatioh of high-alignment carbon nanotubes and aplication for nano-devices

    2012.06

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (other)

  • Fine structure analysis of spherical carbon particles produced in a methane plasma Reviewed

    M. Onoue, H. Okado, T. Ikari, M. Naitoh, T. Nagai, F. Shoji

    Diamond & Related Materials   27-28   10 - 13   2012.05

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1016/j.diamond.2012.05.006

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  • Ion-beam irradiation effect on the growth of carbon nanotubes in the SiC surface decomposition method Reviewed

    M. Naitoh, Y. Karayama, H. Ohaze, T. Ikari

    Japanese Journal of Applied Physics   51 ( 1 )   010201   3pages   2012.01

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1143/JJAP.51.010201

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    CiNii Article

  • STM observation of graphene formation using SiC-on insulator substrates Reviewed

    M. Naitoh, M. Okano, Y. Kitada, Y. Sasaki, Y. Okubo, D. Edamoto, M. Nakao, I. Omura, T. Ikari

    Surface Review and Letters   18 ( 5 )   163 - 167   2011.10

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1142/S0218625X11014643

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  • 走査トンネル顕微鏡による3C-SiC表面のグラフェン化に関する研究 Reviewed

    北田祐介,佐々木悠祐,大久保雄平,碇 智徳,内藤正路,中尾 基

    表面科学   32 ( 7 )   459 - 460   2011.07

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    代表的研究業績

  • イオンビーム照射による表面変性効果を用いたカーボンナノチューブ形成に関する研究 Reviewed

    辛山慶訓,大櫨浩司,山崎絢哉,碇 智徳,山内貴志,内藤正路

    表面科学   32 ( 7 )   457 - 458   2011.07

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  • CVD法によるカーボンナノチューブ成長におけるバッファ層の影響に関する研究 Reviewed

    上村一平,古賀 光,小島健志,植田謙介,碇 智徳,内藤正路,西垣 敏

    表面科学   31 ( 10 )   551 - 553   2010.10

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    代表的研究業績

  • Adsorption of cobalt phthalocyanine on a Si(100) surface with Bi-line structures as evaluated by scanning tunneling microscopy Reviewed

    T. Ikari,S. Tanaka,S. Nakamura,M. Naitoh,S. Nishigaki,F. Shoji

    Applied Surface Science   256 ( 4 )   1132 - 1135   2009.11

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    DOI: 10.1016/j.apsusc.2009.05.115

  • Influence of oxygen on the growth of carbon nanotubes by the SiC surface decomposition method Reviewed

    T. Yamauchi,K. Nagamatsu,Y. Karayama,M. Naitoh,S. Nishigaki,H. Okado

    Applied Surface Science   256 ( 4 )   930 - 933   2009.11

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1016/j.apsusc.2009.05.112

  • Influence of a Cr Layer on the Glass Substrate on the Growth of Carbon Nanotubes by Chemical Vapor Deposition Reviewed

    T. Ikari,H. Koga,K. Kojima,I. Uemura,H. Miyazaki,M. Naitoh,S. Nishigaki

    Surface Review and Letters   16 ( 5 )   761 - 765   2009.10

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1142/S0218625X09013220

  • Influence of the vacuum level upon the growth of carbon nanotubes on silicon carbide surface Reviewed

    J.Yoshida,Y.Yonekubo,T.Nakanishi,H.Okado,M.Naitoh,T.Sakata and H.Mori

    Applied Surface Science   254   7723 - 7727   2008.09

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1016/j.apsusc.2008.02.009

  • SiC(000-1)表面上での自己組織的カーボンナノチューブ形成に関する研究 Reviewed

    米久保喜彦,上田大志,山内貴志,碇 智徳,内藤正路,西垣 敏,大門秀朗,生地文也

    表面科学   29 ( 7 )   418 - 420   2008.07

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  • SiC(0001)-(3x3)表面への銅フタロシアニン吸着の走査トンネル顕微鏡観察 Reviewed

    田中圭介,碇智徳,内藤正路,西垣敏,生地文也

    Journal of the Vacuum Society of Japan   51 ( 3 )   124 - 127   2008.03

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  • Influence of heating rate upon the growth of carbon nanotubes by the SiC surface decomposition method Reviewed

    T.Yamauchi,T.Ueda,M.Naitoh,S.Nishigaki,M.Kusunoki

    Journal of Physics: Conference Series   100   082007.1 - 082007.4   2008.03

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1088/1742-6596/100/8/082007

  • An STM observation of adsorption of CuPc on the Si(100) surface with Bi-line structures Reviewed

    S.Nakamura,S.Kashirajima,Y.Johdai,Y.Yoshiiwa,T.Ikari,M.Naitoh,S.Nishigaki,F.Shoji,Y.Shimizu

    Surface Review and Letters   14 ( 5 )   957 - 961   2007.10

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)

  • Hydrogen-assisted reduction of the Ni(110)(3×1)-O surface studied by metastable-induced electron spectroscopy Reviewed

    T.Ikari,T.Matsuoka,K.Murakami,T.Kawamoto,K.Yamada,A.Watanabe,M.Naitoh,S.Nishigaki

    Surface Science   601 ( 18 )   4418 - 4422   2007.09

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1016/j.susc.2007.04.192

  • Adsorption and reaction of calcium at the Si(111) surface studied by metastable-induced electron spectroscopy Reviewed

    Y.Shirouzu,Y.Kaya,T.Okazaki,A. Watanabe,M.Naitoh,S.Nishigaki,T.Ikari,K.Yamada

    e-Journal of Surface Science and Nanotechnology   5   89 - 93   2007.03

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    DOI: 10.1380/ejssnt.2007.89

  • Biナノワイヤ形成Si(100)表面への銅フタロシアニン吸着の走査トンネル顕微鏡観察 Reviewed

    上代祐藏,吉岩由人,塗木貴彦,中村慎太郎,碇智徳,内藤正路,西垣敏,生地文也

    真空   50 ( 3 )   196 - 198   2007.03

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  • Influence of surface structure modifications on the growth of carbon-nanotubes on the SiC(000-1) surfaces Reviewed

    T.Yamauchi,T.Tokunaga,M.Naitoh,S.Nishigaki,N.Toyama,F.Shoji,M.Kusunoki

    Surface Science   600 ( 18 )   4077 - 4080   2006.09

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    DOI: 10.1016/j.susc.2006.01.125

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  • Direct observation of surface potential change due to hydrogen termination of CVD diamond surface by metastable-induced electron spectroscopy Reviewed

    A.Watanabe,S.Nishioka,Y.Shirouzu,K.Yamada,M.Naitoh,S.Nishigaki

    Surface Science   600 ( 18 )   3659 - 3662   2006.09

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1016/j.susc.2006.02.058

  • Adsorption and reaction of calcium at the Si(111) surface studied by metastable-induced electron spectroscopy

    Y.Shirouzu,T.Ikari,N.Kaya,T.Okazaki,K.Yamada,M.Naitoh,S.Nishigaki

    Proceedings of the 7th Russia-Japan Seminar on Semiconductor Surfaces   2006.09

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  • Hydrogen-assisted reduction of oxidized Ni(110) surfaces studied by metastable-induced electron spectroscopy

    T.Ikari,T.Matsuoka,T.Kawamoto,K.Murakami,K.Yamada,A.Watanabe,M.Naitoh,S.Nishigaki

    Proceedings of the 7th Russia-Japan Seminar on Semiconductor Surfaces   2006.09

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  • Oxidation of a cesium-covered Ni(110) surface studied by metastable-induced electron spectroscopy Reviewed

    T.Ikari,S.Arikado,K.Kameishi,H.Kawahara,K.Yamada,A.Watanabe,M.Naitoh,S.Nishigaki

    Applied Surface Science   252 ( 15 )   5424 - 5427   2006.05

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  • Dynamic formation process of Bi line structure on Si(100) surface Reviewed

    J.-T.Wang,D.-S.Wang,E.-G.Wang,H.Mizuseki,Y.Kawazoe,M.Naitoh,S.Nishigaki

    Computational Materials Science   36   135 - 138   2006.05

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    DOI: 10.1016/j.commatsci.2005.02.016

  • Growth mechanism of ZnSe single crystal by chemical vapour transport method Reviewed

    T.Yamauchi,Y.Takahara,M.Naitoh,N.Narita

    Physica B   376-377   778 - 781   2006.04

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    DOI: 10.1016/j.physb.2005.12.195

  • Surface-structure dependent reaction of hydrogen-assisted reduction at O/Ni(110) surfaces studied by MIES and LEED Reviewed

    T.Ikari,K.Kameishi,S.Arikado,H.Kawahara,T.Matsuoka,K.Yamada,A.Watanabe,M.Naitoh,S.Nishigaki

    e-Journal of Surface Science and Nanotechnology   4   170 - 173   2006.02

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    DOI: 10.1380/ejssnt.2006.170

  • Dynamic ad-dimer twisting assisted nanowire self-assembly on Si(100) Reviewed

    J.-T.Wang,E.-G.Wang,D.-S.Wang,H.Mizuseki,Y.Kawazoe,M.Naitoh,S.Nishigaki

    Physical Review Letters   94 ( 22 )   226103.1 - 226103.4   2005.06

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  • STM observation of Bi line structures on the Si(100) surface with Ag deposition Reviewed

    T.Itoh,S.Kashirajima,M.Naitoh,S.Nishigaki,F.Shoji

    Applied Surface Science   244   161 - 165   2005.05

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)

  • Influence of the incident He* velocity on metastable de-excitation process at a Cs-covered Si(100) surface Reviewed

    T.Ikari,N.Uchino,S.Nishioka,H.Fujiwaki,K.Yamada,A.Watanabe,M.Naitoh,S.Nishigaki

    Nuclear Instruments and Methods in Physics Research B   232   88 - 93   2005.05

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  • Growth control of carbon nanotubes on slicon carbide surfaces using the laser irradiation effect Reviewed

    H.Konishi,H.Matsuoka,N.Toyama,M.Naitoh,S.Nishigaki,M.Kusunoki

    Thin Solid Films   464-465   295 - 298   2004.10

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  • 6H-SiC(000-1)表面再構成過程のSTM・LEED研究 Reviewed

    小野拓磨,内藤正路,西垣敏,遠山尚武,生地文也

    表面科学   25 ( 8 )   519 - 520   2004.08

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  • Surface analysis of β-FeSi2 layer epitaxially grown on Si(100) Reviewed

    F.Shoji,H.Shimoji,M.Naitoh

    Thin Solid Films   461   116 - 119   2004.08

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  • Metastable-induced electron spectroscopy study of hydrogen terminated CVD diamond surface

    A.Watanabe,S.Nishioka,N.Uchino,K.Yamada,M.Naitoh,S.Nishigaki

    Proceedings of the 6th Japan-Russia Seminar on Semiconductor Surfaces   2004.04

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  • Adsorption of Ca on the Si(111) surface and its reaction with the Si substrate studied by AES and MIES

    T.Inoue,N.Uchino,R.Yoshida,S.Nishioka,K.Yamada,A.Watanabe,M.Naitoh,R.Nishitani,S.Nishigaki

    Proceedings of the 6th Japan-Russia Seminar on Semiconductor Surfaces   2004.04

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  • レーザー照射効果を用いたカーボンナノチューブの成長制御 Reviewed

    小西博文,松岡宏則,遠山尚武,内藤正路,西垣敏,楠美智子

    真空   47 ( 3 )   136 - 139   2004.03

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    代表的研究業績

  • Si(100)表面におけるBiナノワイヤ形成過程の走査トンネル顕微鏡観察 Reviewed

    大垣真治,内藤正路,西垣敏,大石信弘,生地文也

    真空   46 ( 6 )   501 - 504   2003.06

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  • 6H-SiC(000-1)再構成表面の走査トンネル顕微鏡/低速電子線回折法による解析 Reviewed

    北田昌俊,内藤正路,西垣敏,遠山尚武,生地文也

    真空   46 ( 6 )   505 - 508   2003.06

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  • A metastable-induced electron spectroscopy study on the process of oxygen adsorption at a Ni(110) surface Reviewed

    T.Ikari,T.Kojima,K.Yamada,M.Naitoh,S.Nishigaki

    Applied Surface Science   212-213   579 - 582   2003.05

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  • Stability of Sb line structure on Si(100) Reviewed

    J.-T.Wang,H.Mizuseki,Y.Kawazoe,T.Hashizume,M.Naitoh,D.-S.Wang,E.-G.Wang

    Physical Review B   67 ( 19 )   193307.1 - 193307.4   2003.05

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  • A structural analysis of Bi/Si(100) 2×n surfaces by ICISS Reviewed

    N.Oishi,N.Saitoh,M.Naitoh,S.Nishigaki,F.Shoji,S.Nakanishi,K.Umezawa

    Applied Surface Science   212-213   373 - 377   2003.05

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  • シリコンカーバイド表面の原子スケール解析とサーファクタントによる新機能開拓

    内藤正路,西垣敏,遠山尚武,生地文也

    マツダ財団研究報告書 ( 未設定 )   15   201 - 208   2003.04

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  • An STM observation of the initial process of graphitization at the 6H-SiC(000-1) surface Reviewed

    M.Naitoh,M.Kitada,S.Nishigaki,N.Toyama,F.Shoji

    Surface Review and Letters   10 ( 2-3 )   473 - 477   2003.04

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  • Sodium-assisted nitrogen adsorption on Si(001) surfaces at room temperature studied by metastable de-excitation spectroscopy Reviewed

    K.Yamada,T.Sugiman,T.Ikari,I.Yokoh,M.Naitoh,S.Nishigaki

    Surface Science   507-510   207 - 212   2002.06

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  • A metastable-induced electron spectroscopy study on the promotion of nitridation by oxygen/alkali pre-adsorbates at Si(100) surfaces Reviewed

    S.Nishigaki,T.Sugiman,T.Ikari,I.Yokoh,K.Yamada,M.Naitoh

    Nuclear Instruments and Methods in Physics Research B   193   460 - 465   2002.06

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  • Growth of iron-silicide thin layers on clean and hydrogen-terminated Si(100) surfaces studied by AES and LEED

    K.Tachibana,T.Ikari,M.Naitoh,S.Nishigaki

    Proceedings of the 5th Russia-Japan Seminar on Semiconductor Surfaces   2002.04

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  • STM observation of Bi-nanowire growth on the Si(100) surface

    S.Ohgaki,M.Takei,M.Naitoh,N.Oishi,S.Nishigaki,F.Shoji

    Proceedings of the 5th Russia-Japan Seminar on Semiconductor Surfaces   2002.04

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  • 走査トンネル顕微鏡による表面原子の観察と操作

    内藤正路

    明専会報 ( 未設定 )   ( 771 )   9 - 11   2001.05

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  • STM and LEED observation of hydrogen adsorption on the 6H-SiC(0001)3×3 surface Reviewed

    J.Takami,M.Naitoh,I.Yokoh,S.Nishigaki,N.Toyama

    Surface Science   482-485   359 - 364   2001.04

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  • Scanning tunneling microscopy observation of Bi-induced surface structures on the Si(100) surface Reviewed

    M.Naitoh,M.Takei,S.Nishigaki,N.Oishi,F.Shoji

    Surface Science   482-485   1440 - 1444   2001.04

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  • シリコン表面上に吸着した微量ビスマス原子のナノワイヤ形成 Invited Reviewed

    内藤正路,武井孝樹,西垣敏,大石信弘,生地文也

    真空   43 ( 11 )   1063 - 1066   2000.11

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  • 吸着水素の半導体表面変性効果による新物質創製(最終報告)

    内藤正路,西垣敏

    財団法人岩谷直治記念財団研究報告書 ( 未設定 )   23   19 - 22   2000.04

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  • 半導体表面における水素原子のサーファクタント作用の解明と新機能抽出に関する研究

    内藤正路

    財団法人池谷科学技術振興財団年報 ( 未設定 )   11   41 - 42   2000.04

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  • Structure of Bi-dimer linear chains on a Si(100)surface : a scanning tunneling microscopy study Reviewed

    M.Naitoh,M.Takei,S.Nishigaki,N.Oishi,F.Shoji

    Japanese Journal of Applied Physics   39 ( 5A )   2793 - 2794   2000.04

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  • Formation of Bi-dimer linear chains on a Si(100)surface studied by STM Reviewed

    M.Naitoh,S.Nishigaki,N.Oishi,F.Shoji

    Transactions of the Material Research Society of Japan   25 ( 3 )   857 - 860   2000.04

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  • Promotion of nitrogen adsorption on Si(100) by alkali pre-adsorbates studied by metastable de-excitation spectroscopy

    S.Nishigaki,T.Sugiman,I.Yokoh,M.Yanagibashi,M.Naitoh,K.Yamada

    Proceedings of the 4th Japan-Russia Seminar on Semiconductor Surfaces   2000.04

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  • 吸着水素の半導体表面変性効果による新物質創製(中間報告)

    内藤正路,西垣敏

    財団法人岩谷直治記念財団研究報告書 ( 未設定 )   22   86 - 88   1999.04

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  • 半導体表面における水素原子の能動的作用の原子スケール解析

    内藤正路

    Annual Report of the Murata Science Foundation ( 未設定 )   13   155 - 157   1999.04

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  • Bismuth-induced surface structure of Si(100) studied by scanning tunneling microscopy Reviewed

    M.Naitoh,H.Shimaya,S.Nishigaki,N.Oishi,F.Shoji

    Applied Surface Science   142   38 - 42   1999.04

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  • A (2√3×2√13) surface phase in the 6H-SiC(0001) surface studied by scanning tunneling microscopy Reviewed

    M.Naitoh,J.Takami,S.Nishigaki,N.Toyama

    Applied Physics Letters   75 ( 5 )   650 - 652   1999.04

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  • Local charge redistribution at potassium adsorption on the Si(111) surface : a scanning tunneling microscopy study Reviewed

    A.Watanabe,M.Naitoh,S.Nishigaki

    Applied Surface Science   144-145   548 - 553   1999.04

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  • Hydrogen-induced reordering of the Si(111)(√3×√3)-Bi surface studied by scanning tunneling microscopy Reviewed

    M.Naitoh,H.Shimaya,N.Oishi,F.Shoji,S.Nishigaki

    Applied Surface Science   123-124   171 - 175   1998.04

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  • Cs and oxygen adsorption on Ge(001) and GaAs(001) surfaces studied by metastable deexcitation spectroscopy Reviewed

    K.Yamada,S.Nishigaki,M.Naitoh

    Surface Review and Letters   5   255 - 259   1998.04

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  • A scanning tunneling microscopy investigation of adsorption and clustering of potassium on the Si(111)7×7 surface Reviewed

    A.Watanabe,M.Naitoh,S.Nishigaki

    Japanese Journal of Applied Physics   37 ( 6B )   3778 - 3781   1998.04

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  • Co-adsorption of cesium and oxygen on GaAs(001)surfaces studied by metastable de-excitation spectroscopy Reviewed

    K.Yamada,J.Asanari,M.Naitoh,S.Nishigaki

    Surface Science   402-404   683 - 686   1998.04

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  • Development of alkali-induced electronic states at GaAs(001)surfaces and their electron-transfer interaction with helium metastable atoms Reviewed

    S.Nishigaki,K.Yamada,J.Asanari,M.Naitoh

    Ultramicroscopy   73   223 - 228   1998.04

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  • Ga-rich GaP(001)(2×4)surface structure studied by low-energy ion scattering spectroscopy Reviewed

    M.Naitoh,A.Konishi,H.Inenaga,S.Nishigaki,N.Oishi,F.Shoji

    Surface Science   402-404   623 - 627   1998.04

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  • An ISS study on Ga-dimer arrangement in the GaP(001)4×2 surface Reviewed

    N.Oishi,F.Shoji,A.Konishi,M.Naitoh,S.Nishigaki

    Surface Review and Letters   5   223 - 227   1998.04

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  • Hydrogen-induced restructuring and crater formation at Si(111)surfaces : a scanning tunneling microscopy study Reviewed

    M.Naitoh,H.Shimaya,A.Watanabe,S.Nishigaki

    Japanese Journal of Applied Physics   37 ( 4A )   2033 - 2034   1998.04

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  • Spin-polarized metastable deexcitation spectroscopy at Ni(110) probing surface spin DOS

    S.Nishigaki,S.Tandjoeng,T.Kato,S.Sonoda,M.Naitoh,K.Yamada

    Proceedings of the 3rd Russia-Japan Seminar on Semiconductor Surfaces   188 - 191   1998.04

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  • 化合物半導体表面における吸着水素の表面変性効果に関する研究

    内藤正路

    第4回新世代研究所研究助成研究成果報告会研究成果報告書 ( 未設定 )   107 - 113   1997.04

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  • Scanning tunneling microscopy observation of bismuth growth on Si(100) surfaces Reviewed

    M.Naitoh,H.Shimaya,S.Nishigaki,N.Oishi,F.Shoji

    Surface Science   377-379   899 - 903   1997.04

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  • Ge(100)表面上の酸素・アルカリ金属共吸着系の準安定原子脱励起分光

    山田健二,内藤正路,西垣 敏

    九州工業大学研究報告   69   15 - 20   1997.04

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  • Hydrogen-induced reconstruction of the GaP(001) surface studied by scanning tunneling microscopy Reviewed

    A.Watanabe,H.Shimaya,M.Naitoh,S.Nishigaki

    Journal of Vacuum Science & Technology B   14   3599 - 3602   1996.04

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  • Interaction of oxygen with alkali metals at the Ge(001) surface studied by metastable deexcitation spectroscopy Reviewed

    K.Yamada,H.Iga,M.Naitoh,S.Nishigaki

    Surface Science   357-358   481 - 485   1996.04

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  • An STM observation of silver growth on hydrogen-terminated Si(111) surfaces Reviewed

    M.Naitoh,A.Watanabe,S.Nishigaki

    Surface Science   357-358   140 - 144   1996.04

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  • A metastable deexcitation spectroscopy study on the oxygenation of alkalated Ge(001) surfaces Reviewed

    S.Nishigaki,K.Yamada,M.Naitoh,H.Iga

    Surface Science   363   121 - 126   1996.04

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  • A clean GaP(4x2)/c(8x2) surface structure studied by scanning tunneling microscopy and ion scattering spectroscopy Reviewed

    M.Naitoh,A.Watanabe,A.Konishi,S.Nishigaki

    Japanese Journal of Applied Physics   35   4789 - 4790   1996.04

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  • Si表面の水素定量と水素終端面上でのAg薄膜形成初期過程の研究

    内藤正路,西垣 敏

    九州工業大学研究報告   68   31 - 39   1996.04

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  • 低エネルギーイオン散乱によるGaP(001)表面の構造解析

    大石信弘,内藤正路,西垣 敏

    九州工業大学研究報告   68   41 - 47   1996.04

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  • Reconstruction of the GaP(001) surface studied by scaning tunneling microscopy

    M.Naitoh,A.Watanabe,H.Shimaya,N.Oishi,S.Nishigaki

    Proceedings of the 2nd Japan-Russia Seminar on Semiconductor Surfaces   178 - 182   1995.04

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    日本   大阪  

  • Interaction of oxygen and alkali metals with Si(100) or Ge(100) surfaces studied with a helium metastable-atom beam

    S.Nishigaki,H,Iga,K.Yamada,M.Naitoh

    Proceedings of the 2nd International Symposium on Advanced Materials   201 - 202   1995.04

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    日本   大阪  

  • Low temperature adsorption of hydrogen on Si(111) and Si(100) surfaces studied by elastic recoil detection analysis Reviewed

    M.Watamori,M.Naitoh,H.Morioka,Y.Maeda,K.Oura

    Applied Surface Science   82-83   417 - 421   1995.03

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  • Heavy-ion RBS/ERDA studies on the growth of silver on hydrogen-terminated Si(111) surfaces Reviewed

    M.Naitoh,H.Morioka,F.Shoji,M.Watamori,K.Oura

    Control of Semiconductor Interfaces   45 - 49   1994.03

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  • Elastic recoil detection analysis of coadsorption of hydrogen and deuterium on clean Si surfaces Reviewed

    K.Oura,M.Naitoh,H.Morioka,M.Watamori,F.Shoji

    Nuclear Instruments and Methods in Physics Research B   85   344 - 346   1994.03

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  • Ion beam analysis of hydrogen on silicon surfaces Reviewed

    K.Oura,M.Naitoh,F.Shoji

    Microbeam analysis   2   139 - 150   1993.12

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  • Coadsorption of hydrogen and deuterium on Si(100) surfaces studied by elastic recoil detection analysis Reviewed

    M.Naitoh,H.Morioka,F.Shoji,K.Oura

    Surface Science   297   135 - 140   1993.12

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  • シリコン表面の水素変性と薄膜形成初期過程 Invited

    尾浦憲治郎,住友弘二,内藤正路

    固体物理   28 ( 12 )   943 - 949   1993.12

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  • Direct observation of the growth process of Ag thin film on a hydrogen-terminated Si(111) surface Reviewed

    M.Naitoh,F.Shoji,K.Oura

    Japanese Journal of Applied Physics   31   4018 - 4019   1992.12

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  • Hydrogen-induced reordering of the Si(111)-√3×√3-Al surface studied by ERDA/LEED Reviewed

    M.Naitoh,H.Ohnishi,Y.Ozaki,F.Shoji,K.Oura

    Applied Surface Science   60-61   190 - 194   1992.08

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  • シリコン表面水素の定量とその成膜過程への影響

    内藤正路,尾浦憲治郎

    大阪大学低温センターだより ( 未設定 )   79   7 - 11   1992.07

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  • 高エネルギーイオンERDAとLEEDによる水素終端Si(111)面上の銀薄膜成長過程の観察 Reviewed

    内藤正路,生地文也,尾浦憲治郎

    真空   34   140 - 142   1991.03

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  • Hydrogen-termination effects on the growth of Ag thin films on Si(111) surfaces Reviewed

    M.Naitoh,F.Shoji,K.Oura

    Surface Science   242   152 - 156   1991.02

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  • Hydrogen-induced reordering of the Si(111)-√3×√3-Ag surface Reviewed

    K.Oura,M.Naitoh,J.Yamane,F.Shoji

    Surface Science   230   L151 - L154   1990.05

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  • Elastic recoil detection analysis of hydrogen adsorbed on solid surfaces Reviewed

    K.Oura,M.Naitoh,F.Shoji,J.Yamane,K.Umezawa,T.Hanawa

    Nuclear Instruments and Methods in Physics Research B   45   199 - 202   1990.03

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  • Hydrogen adsorption on Si(100)-2×1 surfaces studied by elactic recoil detection analysis Reviewed

    K.Oura,J.Yamane,K.Umezawa,M.Naitoh,F.Shoji,T.Hanawa

    Physical Review B   41   1200 - 1203   1990.01

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▼display all

Publications (Books)

  • 薄膜作製応用ハンドブック

    権田俊一監修,内藤正路(132名の執筆者の中の一人)(Joint author ,  第3編第4章第6節)

    エヌ・ティー・エス  1995.11  ( ISBN:4-900830-06-2

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Conference Prsentations (Oral, Poster)

  • A study of the desorption process at Pt adsorbed [EMIm]Tf2N/SiC surface with annealing

    S. Masuda, F. Yamanaka, M. Miyamoto, S. Emoto, M. Watanabe, M. Naitoh, T. Ikari

    The 22nd International Vacuum Congress  2022.09 

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    Event date: 2022.09.11 - 2022.09.16   Language:English  

  • Pt蒸着した[EMIm]Tf2N/SiC表面の加熱による電子状態観測

    山中郁哉, 益田純奨, 杉山宏一, 来海裕之, 渡邊美紀, 内藤正路, 碇 智徳

    令和4年度日本表面真空学会九州支部学術講演会(九州表面・真空研究会2022)  2022.06  日本表面真空学会九州支部

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    Event date: 2022.06.11   Language:Japanese  

  • Surface decomposition of Pt pre-adsorbed SiC surface studied by metastable atom induced electron spectroscopy

    S. Masuda, T. Watanabe, F. Yamanaka, Y. Yamada, M. Watanabe, M. Naitoh, T. Ikari

    The 9th International Symposium on Surface Science 

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    Event date: 2021.11.28 - 2021.12.01   Language:English  

  • Observation of metal-free phthalocyanine adsorbed on SiC reconstructed surface

    S. Emoto, A. Isobe, K. Kawamura, S. Kuroki, M. Naitoh, T. Ikari

    The 9th International Symposium on Surface Science 

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    Event date: 2021.11.28 - 2021.12.01   Language:English  

  • [EMIm]Tf2Nを蒸着したグラファイト/SiC(000-1)表面の電子状態解析

    宮本弥凪, 益田純奨, 田中晶貴, 内藤正路, 碇 智徳

    令和3年度日本表面真空学会九州支部学術講演会(九州表面・真空研究会2021)  2021.06  日本表面真空学会九州支部

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    Event date: 2021.06.05   Language:Japanese  

  • 準安定原子誘起電子分光法によるH2Pc/SiC再構成表面の電子状態の観測

    江本 暁, 河村和哉, 黒木伸一郎, 内藤正路, 碇 智徳

    令和3年度日本表面真空学会九州支部学術講演会(九州表面・真空研究会2021)  2021.06  日本表面真空学会九州支部

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    Event date: 2021.06.05   Language:Japanese  

  • SiC(0001)表面の安定な金属吸着サイトの第一原理計算による探索

    石井純子, 松嶋茂憲, 内藤正路

    日本表面真空学会学術講演会  日本表面真空学会

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    Event date: 2020.11.19 - 2020.11.21   Language:Japanese  

  • SiC表面におけるH2Pc分子の吸着形態の観察

    江本 暁, 河村和哉, 黒木伸一郎, 内藤正路, 碇 智徳

    日本表面真空学会学術講演会  日本表面真空学会

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    Event date: 2020.11.19 - 2020.11.21   Language:Japanese  

  • イオン液体を吸着したSiC再構成表面における電子状態の観測

    宮本弥凪, 田中晶貴, 渡邉拓斗, 内藤正路, 碇 智徳

    日本表面真空学会学術講演会  日本表面真空学会

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    Event date: 2020.11.19 - 2020.11.21   Language:Japanese  

  • プラズマ浸漬格子状ターゲット法による機能性薄膜作製に関する研究

    宗岡絢太, 徳永浩之, 本田 亘, 森田知希, 内藤正路, 碇 智徳

    日本表面真空学会学術講演会  日本表面真空学会

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    Event date: 2020.11.19 - 2020.11.21   Language:Japanese  

  • Si表面上に形成されたCuPc薄膜の走査トンネル顕微鏡観察

    荒 海成, 金丸廉二朗, 廣木竜徳, 内藤正路, 碇 智徳

    日本表面真空学会学術講演会  日本表面真空学会

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    Event date: 2020.11.19 - 2020.11.21   Language:Japanese  

  • イオンビーム照射を用いたSiC基板上のグラフェン形成に関する研究(Ⅲ)

    山田雄也, 白土恵輝, 井田 孟, 小野魁士, 内藤正路, 碇 智徳

    日本表面真空学会学術講演会  日本表面真空学会

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    Event date: 2020.11.19 - 2020.11.21   Language:Japanese  

  • Production conditions of CNT using SiC surface decomposition method

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    Event date: 2019.10.27 - 2019.10.29   Language:Japanese  

  • プラズマ浸漬格子状ターゲット法による表面改質に関する研究

    徳永浩之, 内藤正路, 碇 智徳

    令和元年度日本表面真空学会九州支部学術講演会(九州表面・真空研究会2019)  日本表面真空学会九州支部

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    Event date: 2019.06.01   Language:Japanese  

  • ZnPc蒸着したSiC(0001)-(3×3)表面上の電子状態の観察

    河村和哉, 山田稜汰, 志賀大真, 村岡幸輔, 黒木伸一郎, 内藤正路, 碇 智徳

    第66回応用物理学会春季学術講演会  応用物理学会

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    Event date: 2019.03.09 - 2019.03.12   Language:Japanese  

  • 準安定原子誘起電子分光法によるO/Cs/SiC(3×3)表面の電子状態測定

    田中晶貴, 飯田 涼, 柏谷拓実, 渡邉拓斗, 平山 楓, 田中 悟, 内藤正路, 碇 智徳

    第66回応用物理学会春季学術講演会  応用物理学会

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    Event date: 2019.03.09 - 2019.03.12   Language:Japanese  

  • Study on hydrogen-intercalated graphene/SiC(0001) interface by DFT calculation

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    Event date: 2018.12.18 - 2018.12.20   Language:English  

  • Studies on CuPc adsorption process on Si (100) surface by scanning tunneling microscopy

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    Event date: 2018.11.19 - 2018.11.21   Language:Japanese  

    CiNii Article

  • Observation of adsorption state of ZnPc molecule on graphite surface

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    Event date: 2018.11.19 - 2018.11.21   Language:Japanese  

    CiNii Article

  • Growth control of graphene on the SiC substrate using ion beam irradiation

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    Event date: 2018.11.19 - 2018.11.21   Language:Japanese  

    CiNii Article

  • Production conditions of CNT using SiC surface decomposition method

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    Event date: 2018.11.19 - 2018.11.21   Language:Japanese  

    CiNii Article

  • 水素を導入したグラフェンSiC界面の第一原理計算

    石井純子

    平成30年度日本表面真空学会九州支部学術講演会(九州表面・真空研究会2018)  日本表面真空学会九州支部

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    Event date: 2018.06.09   Language:Japanese  

  • 加熱によるグラファイト表面上のZnPc分子挙動の観測

    河村和哉

    平成30年度日本表面真空学会九州支部学術講演会(九州表面・真空研究会2018)  日本表面真空学会九州支部

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    Event date: 2018.06.09   Language:Japanese  

  • SiC(3×3)表面における酸素とCs吸着に関する研究

    田中晶貴

    平成30年度日本表面真空学会九州支部学術講演会(九州表面・真空研究会2018)  日本表面真空学会九州支部

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    Event date: 2018.06.09   Language:Japanese  

  • A study of epitaxial graphene on 3C-SiC(111) via Ar+ ion beam irradiation

    The International Symposium on Epitaxial Graphene 2017 

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    Event date: 2017.11.22 - 2017.11.25   Language:English  

  • Electronic structure of oxygen and cesium co-adsorption on 6H-SiC(0001)_(6/3x6/3)R30#Uo#U) surface studied by MIES

    The 8th International Symposium on Surface Science 

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    Event date: 2017.10.22 - 2017.10.26   Language:English  

  • Observation of the electronic structure at a zinc-phthalocyanine thin film by MIES

    The 8th International Symposium on Surface Science 

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    Event date: 2017.10.22 - 2017.10.26   Language:English  

  • アルカリ金属及び酸素吸着したSiC(0001)- (6√3×6√3)R30°表面の電子状態

    碇 智徳

    九州表面・真空研究会2017(第22回九州薄膜・表面研究会) 

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    Event date: 2017.06.24   Language:Japanese  

  • MIESによるCuPc/SiC(0001)-(1×1)表面の電子状態観測

    河村和哉

    九州表面・真空研究会2017(第22回九州薄膜・表面研究会) 

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    Event date: 2017.06.24   Language:Japanese  

  • DCメタンプラズマCVDを利用したナノダイヤモンド合成に関するシース作用

    縄田悠人

    九州表面・真空研究会2017(第22回九州薄膜・表面研究会) 

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    Event date: 2017.06.24   Language:Japanese  

  • Oxidation of Cs/6H-SiC(0001) surface studied by metastable-atom induced electron spectroscopy

    Interdisciplinary Symposium for Up-and-comingMaterial Scientists 2017 

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    Event date: 2017.06.08   Language:English  

  • MIESによる酸素吸着したCs/6H-SiC(0001)表面の電子状態観測

    中村拓人

    日本物理学会 第72回年次大会  日本物理学会

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    Event date: 2017.03.17 - 2017.03.20   Language:Japanese  

  • DCメタンプラズマによるナノダイヤモンド合成に及ぼすシースの効果

    小林友樹

    第64回応用物理学関係連合講演会  応用物理学会

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    Event date: 2017.03.14 - 2017.03.17   Language:Japanese  

  • Synthesis of nanodiamonds in sheath of the dc-methane/hydrogen plasma

    Symposium on Surface Science & Nanotechnology 

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    Event date: 2017.01.24 - 2017.01.25   Language:English  

  • A study of surface modification effect in the growth of carbon nanotubes by SiC surface decomposition method

    Symposium on Surface Science & Nanotechnology 

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    Event date: 2017.01.24 - 2017.01.25   Language:English  

  • XPS and STM studies of graphene formation on the SiC(111) surface by ion-beam irradiation

    Symposium on Surface Science & Nanotechnology 

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    Event date: 2017.01.24 - 2017.01.25   Language:English  

  • Effect of M-doping (M=Y, La) on the electronic structure of BiVO4

    2017 International Symposium on Innovation in Information Technology and Application 

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    Event date: 2017.01.10 - 2017.01.13   Language:English  

  • Si(100)上に吸着した銅フタロシアニン薄膜の表面構造解析

    内田真仁

    2016年真空・表面科学合同講演会  日本真空学会・日本表面科学会

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    Event date: 2016.11.29 - 2016.12.01   Language:Japanese  

  • SiC 表面分解法によるカーボンナノチューブ生成における表面変性効果に関する研究(Ⅲ)

    尾山貴大

    2016年真空・表面科学合同講演会  日本真空学会・日本表面科学会

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    Event date: 2016.11.29 - 2016.12.01   Language:Japanese  

  • DCメタンプラズマCVD法によるSi基板上ナノダイヤモンド合成に関する研究

    内田和希

    第77回応用物理学会秋季学術講演会  応用物理学会

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    Event date: 2016.09.13 - 2016.09.16   Language:Japanese  

  • Raman spectroscopy and STM studies of graphene formation on the SiC(111) surface by ion-beam irradiation

    20th International Vacuum Congress 

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    Event date: 2016.08.21 - 2016.08.26   Language:English  

  • The study of the electronic structure at CuPc on graphite/4H-SiC(0001) surface by metastable atom induced electron spectroscopy

    20th International Vacuum Congress 

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    Event date: 2016.08.21 - 2016.08.26   Language:English  

  • Initial oxidation process of the 4H-SiC(0001)-(1×1) reconstructed surface studied by metastable atom induced electron spectroscopy

    20th International Vacuum Congress 

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    Event date: 2016.08.21 - 2016.08.26   Language:English  

  • 銅フタロシアニンを吸着した4H-SiC表面の電子状態の観測

    植杉昌平

    九州表面・真空研究会2016(第21回九州薄膜・表面研究会) 

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    Event date: 2016.06.11   Language:Japanese  

  • 4H-SiC再構成表面における初期酸化過程に関する研究

    平山 楓

    九州表面・真空研究会2016(第21回九州薄膜・表面研究会) 

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    Event date: 2016.06.11   Language:Japanese  

  • DCメタンプラズマCVD法によるSi基板上ナノダイヤモンド薄膜合成に関する研究

    内田和希

    九州表面・真空研究会2016(第21回九州薄膜・表面研究会) 

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    Event date: 2016.06.11   Language:Japanese  

  • Influence of atomic vacancy on the electronic structure of graphene layer on 4H-SiC(0001)

    2016 Kumamoto Symposium on Two Dimensional Nanomaterials 

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    Event date: 2016.02.04   Language:English  

  • Si基板上ナノダイヤモンド薄膜の柱状プラズマCVD法による合成

    内田和希

    2015年真空・表面科学合同講演会  日本真空学会・日本表面科学会

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    Event date: 2015.12.01 - 2015.12.03   Language:Japanese  

  • SiC表面分解法によるカーボンナノチューブ生成における表面変性効果に関する研究(Ⅱ)

    内田真仁

    2015年真空・表面科学合同講演会  日本真空学会・日本表面科学会

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    Event date: 2015.12.01 - 2015.12.03   Language:Japanese  

  • Si(100)上に吸着した金属フタロシアニン薄膜表面における電子状態及び構造解析

    金子福利

    2015年真空・表面科学合同講演会  日本真空学会・日本表面科学会

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    Event date: 2015.12.01 - 2015.12.03   Language:Japanese  

  • A study of the electronic structure at alkali metal adsorbed HOPG surface by MIES and UPS

    10th International Symposium on Atomic Level Characterizations for New Materials and Devices '15 

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    Event date: 2015.10.25 - 2015.10.30   Language:English  

  • Oxidation at Cs pre-adsorbed Si/6H-SiC(0001) reconstructiuon surfaces studied by metastable-atom induced electron spectroscopy

    10th International Symposium on Atomic Level Characterizations for New Materials and Devices '15 

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    Event date: 2015.10.25 - 2015.10.30   Language:English  

  • Electronic structure at MePc/Si(100) surface studied by Metastable-atom Induced Electron Spectroscopy

    10th International Symposium on Atomic Level Characterizations for New Materials and Devices '15 

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    Event date: 2015.10.25 - 2015.10.30   Language:English  

    CiNii Article

  • The formation of epitaxial graphene layers on the 4H-SiC(0001) surface studied by first-principles calculation

    10th International Symposium on Atomic Level Characterizations for New Materials and Devices '15 

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    Event date: 2015.10.25 - 2015.10.30   Language:English  

  • A study in the growth of graphene on the SiC(111) surface with ion beam irradiation

    10th International Symposium on Atomic Level Characterizations for New Materials and Devices '15 

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    Event date: 2015.10.25 - 2015.10.30   Language:English  

  • Si基板上ナノダイヤモンド薄膜の柱状プラズマCVD法による合成

    首藤大輝

    九州表面・真空研究会2015 

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    Event date: 2015.06.13   Language:Japanese  

  • 自然酸化膜付Si基板上へのモノメチルシランを用いたSiC薄膜高速成長(Ⅱ)

    山田晋平

    第62回応用物理学関係連合講演会  応用物理学会

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    Event date: 2015.03.11 - 2015.03.14   Language:Japanese  

  • Cs/グラファイト表面における電子状態の研究

    村岡幸輔

    第55回真空に関する連合講演会  日本真空学会

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    Event date: 2014.11.18 - 2014.11.20   Language:Japanese  

  • 鉛直柱状プラズマ法によるシリコン基板上へのナノダイヤモンド成長

    首藤大輝

    第55回真空に関する連合講演会  日本真空学会

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    Event date: 2014.11.18 - 2014.11.20   Language:Japanese  

  • SiC表面分解法によるカーボンナノチューブ生成における表面変性効果に関する研究

    内藤正路

    第55回真空に関する連合講演会  日本真空学会

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    Event date: 2014.11.18 - 2014.11.20   Language:Japanese  

  • CuPc/Si表面における加熱温度変化に伴う電子状態の観測

    松尾航平

    第55回真空に関する連合講演会  日本真空学会

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    Event date: 2014.11.18 - 2014.11.20   Language:Japanese  

  • 鉛直柱状プラズマ法によるSi(100)上ナノダイヤモンドの合成

    菅 祐志

    第34回表面科学学術講演会  日本表面科学会

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    Event date: 2014.11.06 - 2014.11.08   Language:Japanese  

  • Si基板上3C-SiC薄膜へのイオンビーム照射を用いたグラフェン成長に関する研究

    石井純子

    第34回表面科学学術講演会  日本表面科学会

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    Event date: 2014.11.06 - 2014.11.08   Language:Japanese  

  • A Study of the Formation Process of Graphene on Silicon Carbide-on-Insulator Substrates

    The 7th International Symposium on Surface Science 

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    Event date: 2014.11.02 - 2014.11.06   Language:English  

  • The study of the electronic structure at CuPc adsorbed Si(100) surface by Metastable-atom Induced Electron Spectroscopy

    The 7th International Symposium on Surface Science 

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    Event date: 2014.11.02 - 2014.11.06   Language:English  

  • Oxidation of cesium adsorbed SiC surface studied by metastable atom induced electron spectroscopy

    The 7th International Symposium on Surface Science 

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    Event date: 2014.11.02 - 2014.11.06   Language:English  

  • メタンプラズマシース中において生成される球状カーボン微粒子の特徴

    菅 祐志

    九州表面・真空研究会2014(第19回九州薄膜・表面研究会) 

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    Event date: 2014.06.07   Language:Japanese  

  • Comparison of tribological properties of closed-packed and well-aligned carbon nanotube and Peapod films

    2014 International Industrial Information Systems Conference 

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    Event date: 2014.01.21 - 2014.01.24   Language:English  

  • 鉛直柱状プラズマ-基板間における球状カーボン微粒子の成長様式の解明

    中山泰輔

    平成25年度応用物理学会九州支部学術講演会  応用物理学会九州支部

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    Event date: 2013.11.30 - 2013.12.01   Language:Japanese  

  • 準安定原子誘起電子分光法による銅フタロシアニンを吸着したSi(100)表面の電子状態の観測

    金子福利

    平成25年度応用物理学会九州支部学術講演会  応用物理学会九州支部

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    Event date: 2013.11.30 - 2013.12.01   Language:Japanese  

  • Nd-Fe-B系磁石の保留場に対する圧力効果

    後藤弘樹

    第119回日本物理学会九州支部例会  日本物理学会九州支部

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    Event date: 2013.11.30   Language:Japanese  

  • メソ多孔体細孔中に合成したDyMnO3ナノ粒子の磁性と結晶構

    新納 健

    第119回日本物理学会九州支部例会  日本物理学会九州支部

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    Event date: 2013.11.30   Language:Japanese  

  • 鉛直柱状プラズマシースにおける球状カーボン微粒子の成長

    菅 祐志

    第54回真空に関する連合講演会  日本真空学会

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    Event date: 2013.11.26 - 2013.11.28   Language:Japanese  

  • SOI基板を用いたグラフェン形成に関する研究

    早久和希

    第54回真空に関する連合講演会  日本真空学会

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    Event date: 2013.11.26 - 2013.11.28   Language:Japanese  

  • Cu(111)面に吸着させた蛍光タンパク質の走査トンネル顕微鏡観察

    冨田哲朗

    第54回真空に関する連合講演会  日本真空学会

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    Event date: 2013.11.26 - 2013.11.28   Language:Japanese  

  • イオンビーム照射を用いたカーボンナノチューブ生成制御に関する研究

    高松草平

    第54回真空に関する連合講演会  日本真空学会

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    Event date: 2013.11.26 - 2013.11.28   Language:Japanese  

  • Ion-beam irradiation effect in the growth process of grapheme using SiC-on-insulator substrates

    The International Conference on Silicon Carbide and Related Materials 

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    Event date: 2013.09.29 - 2013.10.04   Language:English  

  • Growth control of carbon nanotubes using ion-beam irradiation in the SiC surface decomposition method

    The International Conference on Silicon Carbide and Related Materials 

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    Event date: 2013.09.29 - 2013.10.04   Language:English  

  • Observation of the electronic structure of Si/6H-SiC(0001) reconstruction surfaces by metastable atom induced electron spectroscopy

    The International Conference on Silicon Carbide and Related Materials 

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    Event date: 2013.09.29 - 2013.10.04   Language:English  

  • SOI基板を用いたSiC膜のグラフェン化におけるイオンビーム照射に関する研究

    枝元太希

    九州表面・真空研究会2013(第18回九州薄膜・表面研究会) 

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    Event date: 2013.06.15   Language:Japanese  

  • MIESを用いた6H-SiC(0001)表面構造変化に伴う最表面電子状態の観測

    村岡幸輔

    九州表面・真空研究会2013(第18回九州薄膜・表面研究会) 

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    Event date: 2013.06.15   Language:Japanese  

  • Adsorption of fullerene on a Si(100) surface with Bi-line structure as evaluated by scanning tunneling microscopy

    2012 Joint Conference of the International Industrial Information Systems Conference & the International Conference on Computers, Communications and Systems 

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    Event date: 2012.12.20 - 2012.12.23   Language:English  

  • 熱CVD法によるAl及びNi金属膜を用いたCNT成長に関する研究

    川島智幸

    平成24年度応用物理学会九州支部学術講演会  応用物理学会九州支部

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    Event date: 2012.12.01 - 2012.12.02   Language:Japanese  

  • SOI基板上に成長させたSiC薄膜のグラフェン化に関する研究

    枝元太希

    平成24年度応用物理学会九州支部学術講演会  応用物理学会九州支部

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    Event date: 2012.12.01 - 2012.12.02   Language:Japanese  

  • SiC表面変性効果を用いたカーボンナノチューブ生成制御に関する研究

    瀬尾甲太郎

    平成24年度応用物理学会九州支部学術講演会  応用物理学会九州支部

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    Event date: 2012.12.01 - 2012.12.02   Language:Japanese  

  • Si基板上3C-SiC薄膜を用いたグラフェン形成に関する研究

    内田健太郎

    第32回表面科学学術講演会  日本表面科学会

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    Event date: 2012.11.20 - 2012.11.22   Language:Japanese  

  • 低温低圧柱状プラズマを用いた球状炭素粒子の形成と構造解析

    中山泰輔

    第53回真空に関する連合講演会  日本真空学会

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    Event date: 2012.11.14 - 2012.11.16   Language:Japanese  

  • 準安定原子誘起電子分光法によるSi/6H-SiC(0001)表面の電子状態抽出

    森岡明大

    第53回真空に関する連合講演会  日本真空学会

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    Event date: 2012.11.14 - 2012.11.16   Language:Japanese  

  • Si基板上3C-SiC薄膜のグラフェン形成過程に関するSTM研究

    内田健太郎

    第73回応用物理学会学術講演会  応用物理学会

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    Event date: 2012.09.11 - 2012.09.14   Language:Japanese  

  • Si基板上に成長させたSiC薄膜のグラフェン化に関する研究

    枝元太希

    九州表面・真空研究会2012(第17回九州薄膜・表面研究会) 

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    Event date: 2012.06.09   Language:Japanese  

  • 高密度配向カーボンナノチューブ及びピーポッドの摩擦力測定

    井上一平

    九州表面・真空研究会2012(第17回九州薄膜・表面研究会) 

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    Event date: 2012.06.09   Language:Japanese  

  • CVD法によるSi基板上へのカーボンナノチューブ形成に関する研究

    瀬尾甲太郎

    九州表面・真空研究会2012(第17回九州薄膜・表面研究会) 

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    Event date: 2012.06.09   Language:Japanese  

  • MPCVD法によるダイヤモンド薄膜形成

    中山泰輔

    九州表面・真空研究会2012(第17回九州薄膜・表面研究会) 

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    Event date: 2012.06.09   Language:Japanese  

  • 一次元原子鎖形成Si(100)表面上のフラーレン吸着に関する研究

    内田健太郎

    第31回表面科学学術講演会 

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    Event date: 2011.12.15 - 2011.12.17   Language:Japanese  

  • Si基板上に成長させたSiC薄膜のグラフェン化に関する研究とパワーデバイス用素子への可能性

    岡野資睦

    第31回表面科学学術講演会 

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    Event date: 2011.12.15 - 2011.12.17   Language:Japanese  

  • Fine structure analysis of spherical carbon particles produced in a methane plasma

    22nd European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides 

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    Event date: 2011.09.04 - 2011.09.08   Language:English  

  • CVD法によるガラス基板上へのカーボンナノチューブ形成におけるバッファ層の影響に関する研究

    竹堂公貴

    九州表面・真空研究会2011(第16回九州薄膜・表面研究会) 

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    Event date: 2011.06.11   Language:Japanese  

  • 低圧メタンプラズマにおける球状炭素粒子の微細構造と成長に関する研究

    尾上雅俊

    九州表面・真空研究会2011(第16回九州薄膜・表面研究会) 

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    Event date: 2011.06.11   Language:Japanese  

  • 走査トンネル顕微鏡によるBiナノワイヤ形成Si(100)表面上のフラーレン吸着・脱離に関する研究

    内田健太郎

    九州表面・真空研究会2011(第16回九州薄膜・表面研究会) 

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    Event date: 2011.06.11   Language:Japanese  

  • 走査トンネル顕微鏡による3C-SiC表面上のグラフェン形成過程に関する研究

    大久保雄平

    九州表面・真空研究会2011(第16回九州薄膜・表面研究会) 

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    Event date: 2011.06.11   Language:Japanese  

  • 低温メタンプラズマにおける球状炭素微粒子成長とその微細構造解析Ⅱ

    工学研究科電気電子工学専攻 尾上雅俊

    第58回応用物理学関係連合講演会 

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    Event date: 2011.03.24 - 2011.03.27   Language:Japanese  

  • 低温低圧柱状プラズマによる炭素系球状粒子成長に関する研究

    工学研究科電気電子工学専攻 尾上雅俊

    平成22年度応用物理学会九州支部学術講演会 

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    Event date: 2010.11.27 - 2010.11.28   Language:Japanese  

  • SiC表面分解法における重水雰囲気の影響

    工学研究科先端機能システム工学専攻 野田光洋

    平成22年度応用物理学会九州支部学術講演会 

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    Event date: 2010.11.27 - 2010.11.28   Language:Japanese  

  • 走査トンネル顕微鏡による3C-SiC表面のグラフェン形成過程に関する研究

    工学府博士前期電気電子 佐々木悠祐

    平成22年度応用物理学会九州支部学術講演会 

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    Event date: 2010.11.27 - 2010.11.28   Language:Japanese  

  • イオンビーム照射によるSiC表面上カーボンナノチューブ生成制御に関する研究

    工学府博士前期電気電子 大櫨浩司

    第30回表面科学学術講演会 

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    Event date: 2010.11.04 - 2010.11.06   Language:Japanese  

  • 走査トンネル顕微鏡によるSiC表面上のグラフェン形成過程に関する研究

    工学府博士前期電気電子 北田祐介

    第30回表面科学学術講演会 

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    Event date: 2010.11.04 - 2010.11.06   Language:Japanese  

  • ガラス及びSi基板上へのカーボンナノチューブ形成におけるバッファ層の影響に関する研究

    工学府博士前期電気電子 植田謙介

    第30回表面科学学術講演会 

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    Event date: 2010.11.04 - 2010.11.06   Language:Japanese  

  • 低温メタンプラズマにおける球状炭素微粒子成長とその微細構造解析Ⅰ

    工学研究科電気電子工学専攻 尾上雅俊

    第71回応用物理学会学術講演会 

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    Event date: 2010.09.14 - 2010.09.17   Language:Japanese  

  • Biナノワイヤ形成Si(100)表面への金属フタロシアニン及びC60吸着のSTM研究

    本人

    第71回応用物理学会学術講演会 

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    Event date: 2010.09.14 - 2010.09.17   Language:Japanese  

  • イオンビーム照射によるSiC表面変性効果を用いたカーボンナノチューブ形成

    工学研究科電気工学専攻 辛山慶訓

    九州表面・真空研究会2010(第15回九州薄膜・表面研究会) 

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    Event date: 2010.06.12   Language:Japanese  

  • 準安定原子誘起電子分光法によるNiO(100)表面の電子状態抽出

    工学研究科電気電子工学専攻 清水洋平

    平成21年度応用物理学会九州支部学術講演会 

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    Event date: 2009.11.22   Language:Japanese  

  • イオンビーム照射による表面変性効果を用いたカーボンナノチューブ形成に関する研究

    工学府博士前期電気電子 永松謙佑

    第29回表面科学講演大会 

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    Event date: 2009.10.27 - 2009.10.29   Language:Japanese  

  • CVD法によるカーボンナノチューブ成長におけるバッファ層の影響に関する研究

    工学府博士前期電気電子 田中繁文

    第29回表面科学講演大会 

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    Event date: 2009.10.27 - 2009.10.29   Language:Japanese  

  • Biナノワイヤ形成Si(100)表面へのCuPc吸着に関するSTM研究

    工学府博士前期電気電子 田中繁文

    第29回表面科学講演大会 

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    Event date: 2009.10.27 - 2009.10.29   Language:Japanese  

  • SiC(0001)基板上での高密度高配向ピーポッドの作製

    工学研究科先端機能システム工学専攻 大門秀朗

    九州表面・真空研究会2009(第14回九州薄膜表面研究会) 

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    Event date: 2009.06.13   Language:Japanese  

  • CVD法により作製したカーボンナノチューブの電界放出特性評価

    工学研究科電気工学専攻 上村一平

    九州表面・真空研究会2009(第14回九州薄膜表面研究会) 

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    Event date: 2009.06.13   Language:Japanese  

  • Growth control of carbon nanotubes on silicon carbide surface by surface decomposition method

    4th Vacuum and Surface Sciences Conference of Asia and Australia 

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    Event date: 2008.10.28 - 2008.10.31   Language:English  

  • A study of adsorption of cobalt phthalocyanine on the Si(100) surface with Bi-line structures by scanning tunneling microscopy

    4th Vacuum and Surface Sciences Conference of Asia and Australia 

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    Event date: 2008.10.28 - 2008.10.31   Language:English  

  • Reduction reaction of oxidized Ni(110) surfaces with hydrogen studied by metastable-induced electron spectroscopy

    4th Vacuum and Surface Sciences Conference of Asia and Australia 

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    Event date: 2008.10.28 - 2008.10.31   Language:English  

  • Growth control of carbon nanotubes on silicon carbide surface by surface decomposition method

    4th Vacuum and Surface Sciences Conference of Asia and Australia 

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    Event date: 2008.10.28 - 2008.10.31   Language:English  

  • An STM observation of adsorption of cobalt phthalocyanine on the 6H-SiC(0001) surfaces

    4th Vacuum and Surface Sciences Conference of Asia and Australia 

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    Event date: 2008.10.28 - 2008.10.31   Language:English  

  • Influence of the oxygen on the growth of carbon nanotubes by the SiC surface decomposition method

    4th Vacuum and Surface Sciences Conference of Asia and Australia 

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    Event date: 2008.10.28 - 2008.10.31   Language:English  

  • SiC表面分解法によるカーボンナノチューブ生成における酸素の与える影響に関する研究

    工学研究科電気工学専攻 永松謙佑

    第13回九州薄膜・表面研究会 

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    Event date: 2008.06.21   Language:Japanese  

  • 準安定原子誘起電子分光法を用いたO/Ni(11)表面における水素還元・吸着プロセスの研究

    宇部高専 碇智徳

    第13回九州薄膜・表面研究会 

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    Event date: 2008.06.21   Language:Japanese  

  • Biナノワイヤ形成Si(100)表面へのフタロシアニン吸着のSTM研究

    工学研究科電気工学専攻 中村慎太郎

    第55回応用物理学会関係連合講演会 

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    Event date: 2008.03.27 - 2008.03.30   Language:Japanese  

  • 原子状水素を用いた酸化Ni(110)表面還元反応のMIESとLEEDによる研究

    工学研究科電気工学専攻 川本卓磨

    平成19年度応用物理学会九州支部学術講演会 

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    Event date: 2007.12.01 - 2007.12.02   Language:Japanese  

  • 準安定ヘリウム原子の脱励起プロセスにおける速度依存性

    石川高専 山田健二

    平成19年度日本物理学会北陸支部学術講演会 

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    Event date: 2007.12.01   Language:Japanese  

  • SiC(0001)3×3表面への銅フタロシアニン吸着の走査トンネル顕微鏡観察

    大学院工学研究科電気工学専攻 田中圭介

    第48回真空に関する連合講演会 

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    Event date: 2007.11.14 - 2007.11.16   Language:Japanese  

  • Formation of carbon nanotubes on a polyimide substrate by chemical vapor deposition method

    9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures 

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    Event date: 2007.11.11 - 2007.11.15   Language:English  

  • Influence by the difference of the vacuum degree to the growth of carbon nanotubes on silicon carbide surface

    9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures 

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    Event date: 2007.11.11 - 2007.11.15   Language:English  

  • Hydrogen-assisted reduction of oxidized Ni(110) surfaces studied by metastable-induced electron spectroscopy

    9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures 

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    Event date: 2007.11.11 - 2007.11.15   Language:English  

  • SiC(000-1)表面上での自己組織的カーボンナノチューブ形成に関する研究

    工学研究科電気工学専攻 米久保喜彦

    第27回表面科学講演大会 

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    Event date: 2007.11.01 - 2007.11.03   Language:Japanese  

  • Influence of the heating rate upon the growth of carbon-nanotubes by SiC surface decompisition method

    17th International Vacuum Congress,13th International Conference on Surface Science andInternational Conference on Nano Sciecen and Technology 

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    Event date: 2007.07.02 - 2007.07.06   Language:English  

  • 原子状水素を用いた酸化Ni(110)表面還元反応のMIESとLEEDによる研究

    工学研究科電気工学専攻 村上和大

    第12回九州薄膜・表面研究会 

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    Event date: 2007.06.16   Language:Japanese  

  • CVD法を用いたポリイミド基板上へのカーボンナノチューブ低温形成

    工学研究科電気工学専攻 松本康伸

    第12回九州薄膜・表面研究会 

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    Event date: 2007.06.16   Language:Japanese  

  • Biナノワイヤ形成Si(100)表面へのフタロシアニン吸着過程のSTM研究

    工学研究科電気工学専攻 中村慎太郎

    第12回九州薄膜・表面研究会 

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    Event date: 2007.06.16   Language:Japanese  

  • Biナノワイヤ形成Si(100)表面へのCuPc吸着に関するSTM研究

    工学研究科電気工学専攻 上代祐蔵

    第47回真空に関する連合講演会 

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    Event date: 2006.11.07 - 2006.11.09   Language:Japanese  

  • 水素終端6H-SiC(0001)3x3表面へのCuPc吸着に関するSTM研究

    工学研究科電気工学専攻 安冨一裕

    第47回真空に関する連合講演会 

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    Event date: 2006.11.07 - 2006.11.09   Language:Japanese  

  • SiC表面分解法でのCNT配向膜形成に関する研究

    工学研究科電気工学専攻 上田大志

    第47回真空に関する連合講演会 

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    Event date: 2006.11.07 - 2006.11.09   Language:Japanese  

  • Hydrogen-assisted reduction of oxidized Ni(110) surfaces studied by metastable-induced electron spectroscopy

    7th Russia-Japan Seminar on Semiconductor Surface 

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    Event date: 2006.09.17 - 2006.09.21   Language:English  

  • Adsorption and reaction of calcium at the Si(111) surface studied by metastable-induced electron spectroscopy

    7th Russia-Japan Seminar on Semiconductor Surface 

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    Event date: 2006.09.17 - 2006.09.21   Language:English  

  • An STM observation of adsorption of CuPc on the Si(100) surface with Bi-line structures

    The 24th European Conference on Surface Science 

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    Event date: 2006.09.04 - 2006.09.08   Language:English  

  • Hydrogen-assisted reduction of the Ni(110)(3x1)-O surface studied by MIES and LEED

    24th European Conference on Surface Science 

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    Event date: 2006.09.04 - 2006.09.08   Language:English  

  • 水素によるO/Ni(110)表面還元反応の基板温度依存性-MIESとLEEDによる研究

    工学研究科電気工学専攻 川本卓磨

    第11回九州薄膜・表面研究会 

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    Event date: 2006.06.17   Language:Japanese  

  • Ca吸着Si(111)表面電子状態のMIESによる研究

    工学研究科電気工学専攻 嘉屋旨哲

    第11回九州薄膜・表面研究会 

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    Event date: 2006.06.17   Language:Japanese  

  • 表面分解法による6H-SiC-C面のカーボンナノチューブ成長過程

    工学部電気工学科 山内貴志

    平成17年度応用物理学会九州支部学術講演会 

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    Event date: 2005.11.26 - 2005.11.27   Language:Japanese  

  • 水素ガスによるO/Ni(110)表面の還元反応:MIESとLEEDによる研究

    工学研究科電気工学専攻 松岡利幸

    平成17年度応用物理学会九州支部学術講演会 

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    Event date: 2005.11.26 - 2005.11.27   Language:Japanese  

  • Ca/Si(111)表面反応のMIESとLEEDによる研究

    工学研究科電気工学専攻 白水康雄

    平成17年度応用物理学会九州支部学術講演会 

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    Event date: 2005.11.26 - 2005.11.27   Language:Japanese  

  • 低速イオン散乱分光法による酸素吸着Ni(110)表面の構造解析

    工学研究科電気工学専攻 松岡悠一郎

    平成17年度応用物理学会九州支部学術講演会 

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    Event date: 2005.11.26 - 2005.11.27   Language:Japanese  

  • Surface structure dependent reaction of hydrogen-assisted reduction at O/Ni(110) surfaces studied by MIES and LEED

    4th International Symposium on Surface Science and Nanotechnology 

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    Event date: 2005.11.14 - 2005.11.17   Language:English  

  • 準安定励起原子を用いた半導体表面の電子状態抽出

    石川工業高等専門学校 山田健二

    平成17年度電気関係学会北陸支部連合大会 

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    Event date: 2005.09.24 - 2005.09.25   Language:Japanese  

  • Co-adsorption of silver and hydrogen on the Si(100) surface with Bi line structures studied by scanning tunneling microscopy

    5th Iberian Vacuum Meeting 

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    Event date: 2005.09.18 - 2005.09.21   Language:English  

  • Adsorption of hydrogen on the 6H-SiC(0001)(2√3×2√13) surface studied by scanning tunneling microscopy

    5th Iberian Vacuum Meeting 

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    Event date: 2005.09.18 - 2005.09.21   Language:English  

  • 6H-SiC(000-1)C面における表面構造のカーボンナノチューブ成長へ与える影響

    工学部電気工学科 山内貴志

    第66回応用物理学会学術講演会 

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    Event date: 2005.09.07 - 2005.09.11   Language:Japanese  

  • Influence of surface structure modifications on the growth of carbon-nanotubes on the SiC(000-1) C-faces

    The 23rd European Conference on Surface Science 

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    Event date: 2005.09.04 - 2005.09.09   Language:English  

  • Direct observation of surface potential change due to hydrogen termination of CVD diamond surface by metastable-induced electron spectroscopy

    The 23rd European Conference on Surface Science 

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    Event date: 2005.09.04 - 2005.09.09   Language:English  

  • Growth mechanism of ZnSe single crystal by chemical vapour transport method

    The 23rd International Conference on Defects in Semiconductors 

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    Event date: 2005.07.27   Language:English  

  • Oxidation of a cesium-covered Ni(110) surface studied by a metastable-induced electron spectroscopy

    8th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures 

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    Event date: 2005.06.19 - 2005.06.23   Language:English  

  • CVT法で作製したZnSe単結晶表面のAFM観察

    工学部電気工学科 山内貴志

    第10回九州薄膜・表面研究会 

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    Event date: 2005.06.18   Language:Japanese  

  • 水素曝露されたO/Ni(110)表面のMIESによる表面電子状態密度抽出

    工学研究科電気工学専攻 川原宏樹

    第10回九州薄膜・表面研究会 

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    Event date: 2005.06.18   Language:Japanese  

  • Si(100)表面上のCa吸着とCaシリサイド薄膜形成プロセス

    工学研究科電気工学専攻 吉田亮

    第10回九州薄膜・表面研究会 

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    Event date: 2005.06.18   Language:Japanese  

  • 水素原子吸着によるダイヤモンド表面ポテンシャルの変化:UPS/MIESの同時計測による研究

    工学研究科電気工学専攻 西岡信介

    第10回九州薄膜・表面研究会 

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    Event date: 2005.06.18   Language:Japanese  

  • SiC(000-1)表面への水素吸着過程のSTM研究

    工学研究科電気工学専攻 矢野祐樹

    第1回「水素をモデレートとした電子デバイス要素技術の開発および応用研究」プロジェクト研究報告会 

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    Event date: 2005.05.27   Language:Japanese  

  • 水素終端CVDダイヤモンド表面電子状態の準安定原子誘起電子分光法による研究

    工学部電気工学科 渡邉晃彦

    第1回「水素をモデレートとした電子デバイス要素技術の開発および応用研究」プロジェクト研究報告会 

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    Event date: 2005.05.27   Language:Japanese  

  • Biナノワイヤ形成Si(100)表面へのAg原子及び水素の吸着・脱離過程のSTM研究

    工学研究科電気工学専攻 頭島周

    第1回「水素をモデレートとした電子デバイス要素技術の開発および応用研究」プロジェクト研究報告会 

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    Event date: 2005.05.27   Language:Japanese  

  • 酸素吸着Ni(110)表面の水素による還元反応:準安定原子誘起電子分光と低速電子線回折による研究

    工学部電気工学科 碇智徳

    第1回「水素をモデレートとした電子デバイス要素技術の開発および応用研究」プロジェクト研究報告会 

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    Event date: 2005.05.27   Language:Japanese  

  • カーボンナノチューブの低温形成と選択的成長制御

    工学研究科電気工学専攻 山崎宏徳

    第1回「水素をモデレートとした電子デバイス要素技術の開発および応用研究」プロジェクト研究報告会 

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    Event date: 2005.05.27   Language:Japanese  

  • Influences of the incident He* velocity on the metastable de-excitation process at surfaces and the resultant electron spectra

    15th International Workshop on Inelastic Ion Surface Collisions 

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    Event date: 2004.10.22   Language:English  

  • Adsorption of Ca on the Si(111) surface and its reaction with the Si substrate studied by AES and MIES

    6th Japan-Russia Seminar on Semiconductor Surfaces 

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    Event date: 2004.10.12 - 2004.10.15   Language:English  

  • Metastable-induced electron spectroscopy study of hydrogen terminated CVD diamond surface

    6th Japan-Russia Seminar on Semiconductor Surfaces 

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    Event date: 2004.10.12 - 2004.10.15   Language:English  

  • Biナノワイヤ形成Si(100)表面へのAg原子吸着過程のSTM観察

    工学研究科電気工学専攻 頭島周

    第65回応用物理学会学術講演会 

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    Event date: 2004.09.01 - 2004.09.04   Language:Japanese  

  • STM observation of Bi line structures on the Si(100) surface with Ag deposition

    12th International Conference on Solid Films and Surfaces 

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    Event date: 2004.06.21 - 2004.06.25   Language:English  

  • Hydrogen-induced reordering of the 6H-SiC(0001)-(2√3×2√13) surface studied by scanning tunneling microscopy

    12th International Conference on Solid Films and Surfaces 

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    Event date: 2004.06.21 - 2004.06.25   Language:English  

  • 6H-SiC(000-1)表面への水素吸着過程のSTM研究

    工学研究科電気工学専攻 徳永孝行

    第9回九州薄膜・表面研究会 

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    Event date: 2004.06.19   Language:Japanese  

  • Biナノワイヤ形成Si(100)表面へのAg原子吸着過程のSTM観察

    工学研究科電気工学専攻 頭島 周

    第9回九州薄膜・表面研究会 

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    Event date: 2004.06.19   Language:Japanese  

  • 準安定原子脱励起スペクトルのHe*原子入射速度依存性

    工学部電気工学科 西垣 敏

    第4回「イオンビームによる表面・界面解析」特別研究会 

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    Event date: 2003.12.20   Language:Japanese  

  • 準安定原子脱励起スペクトルの表面-He*相対速度依存性

    工学研究科電気工学専攻 内野直喜

    第109回日本物理学会九州支部例会 

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    Event date: 2003.11.29   Language:Japanese  

  • ナノワイヤを含むBi/Si(100)表面の構造変化に関するSTM研究

    工学研究科電気工学専攻 伊藤剛士

    第109回日本物理学会九州支部例会 

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    Event date: 2003.11.29   Language:Japanese  

  • 表面スピン電子密度分布のためのヘリウム準安定原子ビームのスピン偏極化

    工学研究科電気工学専攻 亀石浩太

    第109回日本物理学会九州支部例会 

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    Event date: 2003.11.29   Language:Japanese  

  • 6H-SiC(000-1)表面再構成過程のSTM・LEED研究

    工学研究科電気工学専攻 小野拓磨

    第23回表面科学講演大会 

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    Event date: 2003.11.26 - 2003.11.28   Language:Japanese  

  • Preparation of Si(100)-1×1-Bi phase by the mass-analyzed low-energy ion deposition method

    7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures 

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    Event date: 2003.11.16 - 2003.11.20   Language:English  

  • Formation of carbon-nanotubes on silicon carbide surfaces and selective growth control by the laser irradiation

    7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures 

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    Event date: 2003.11.16 - 2003.11.20   Language:English  

  • カーボンナノチューブの生成メカニズム解明および選択的成長制御

    工学研究科電気工学専攻 小西博文

    第44回真空に関する連合講演会 

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    Event date: 2003.11.12 - 2003.11.14   Language:Japanese  

  • Surface analysis of β-FeSi2 layer epitaxially grown on Si(100)

    International Union of Materials Research Societies - International Conference on Advanced Materials 

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    Event date: 2003.10.11   Language:English  

  • CCVD法によるカーボンナノチューブの生成及び評価

    工学研究科電気工学専攻 御木智幸

    電気関係学会九州支部第56回連合大会 

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    Event date: 2003.09.26   Language:Japanese  

  • SiC表面上でのカーボンナノチューブの生成およびレーザ照射による表面変性

    工学研究科電気工学専攻 松岡宏則

    電気関係学会九州支部第56回連合大会 

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    Event date: 2003.09.26   Language:Japanese  

  • 低速イオン散乱法によるSi(100)上Bi多層吸着膜の構造解析

    工学研究科電気工学専攻 児玉諭彦

    第8回九州薄膜・表面セミナー 

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    Event date: 2003.07.05   Language:Japanese  

  • ヘリウム準安定原子のスピン偏極化及び表面スピン電子状態分析への応用

    工学研究科電気工学専攻 碇智徳

    第8回九州薄膜・表面セミナー 

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    Event date: 2003.07.05   Language:Japanese  

  • SiC表面上でのカーボンナノチューブの自己組織化形成

    工学研究科電気工学専攻 小西博文

    第8回九州薄膜・表面セミナー 

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    Event date: 2003.07.05   Language:Japanese  

  • SiC(0001)及び(000-1)表面再構成のSTM-LEED研究

    工学研究科電気工学専攻 小野拓磨

    第8回九州薄膜・表面セミナー 

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    Event date: 2003.07.05   Language:Japanese  

  • Si(100)表面に自己組織的に誘起された一次元構造の形成メカニズムの解明

    工学研究科電気工学専攻 伊藤剛士

    第8回九州薄膜・表面セミナー 

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    Event date: 2003.07.05   Language:Japanese  

  • SiC表面上でのカーボンナノチューブの生成およびTEM観察

    工学研究科電気工学専攻 小西博文

    第50回応用物理学関係連合講演会 

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    Event date: 2003.03.27 - 2003.03.30   Language:Japanese  

  • Si(100)表面におけるBiナノワイヤ形成過程のSTM観察

    工学研究科電気工学専攻 大垣真治

    第43回真空に関する連合講演会 

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    Event date: 2002.10.16 - 2002.10.18   Language:Japanese  

  • 6H-SiC(000-1)再構成表面のSTM/LEEDによる解析

    工学研究科電気工学専攻 北田昌俊

    第43回真空に関する連合講演会 

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    Event date: 2002.10.16 - 2002.10.18   Language:Japanese  

  • 低速イオン散乱法によるSi(100)表面上Bi薄膜の構造解析

    工学研究科電気工学専攻 斉藤伸之

    第43回真空に関する連合講演会 

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    Event date: 2002.10.16 - 2002.10.18   Language:Japanese  

  • Bi-induced line structures on Si(100) surfaces

    Asia-Pacific Surface & Interface Analysis Conference 

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    Event date: 2002.10.02   Language:English  

  • Growth of iron-silicide thin layers on clean and hydrogen-terminated Si(100) surfaces studied by AES and LEED

    5th Russia-Japan Seminar on Semiconductor Surfaces 

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    Event date: 2002.09.16 - 2002.09.17   Language:English  

  • STM observation of Bi-nanowire formation on the Si(100) surface

    5th Russia-Japan Seminar on Semiconductor Surfaces 

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    Event date: 2002.09.16 - 2002.09.17   Language:English  

  • An STM observation of initial process of graphitization on the 6H-SiC(000-1) surface

    7th International Conference on the Structure of Surfaces 

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    Event date: 2002.07.23   Language:English  

  • A metastable-induced electron spectroscopy study on the process of oxygen adsorption at a Ni(110) surface

    11th International Conference on Solid Films and Surfaces 

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    Event date: 2002.07.08 - 2002.07.10   Language:English  

  • A structural analysis of Bi/Si(100) 2×n surfaces by ICISS

    11th International Conference on Solid Films and Surfaces 

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    Event date: 2002.07.08 - 2002.07.10   Language:English  

  • 低速イオン散乱法によるSi(100)上Bi薄膜の構造解析

    第7回九州薄膜・表面セミナー 

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    Event date: 2002.06.22   Language:Japanese  

  • Si(100)表面上のBi原子ワイヤー形成過程

    第7回九州薄膜・表面セミナー 

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    Event date: 2002.06.22   Language:Japanese  

  • SiC表面上でのカーボンナノチューブ形成

    第7回九州薄膜・表面セミナー 

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    Event date: 2002.06.22   Language:Japanese  

  • O吸着Ni(110)表面の準安定原子誘起電子分光

    第7回九州薄膜・表面セミナー 

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    Event date: 2002.06.22   Language:Japanese  

  • Si(100)面上での鉄シリサイド薄膜の形成

    第3回表面科学会関西支部学生セッション 

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    Event date: 2002.03.08   Language:Japanese  

  • スピン偏極MDSによるO/Ni(110)表面研究

    第3回表面科学会関西支部学生セッション 

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    Event date: 2002.03.08   Language:Japanese  

  • Scanning tunneling microscopy observation of initial process of graphitization on the 6H-SiC(000-1) surface

    Atomic-Scale Surface Designing for Functional Low-Dimensional Materials 

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    Event date: 2001.11.15   Language:English  

  • シリコン表面上に吸着した微量ビスマス原子のナノワイヤ形成

    本人

    第42回真空に関する連合講演会 

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    Event date: 2001.10.17   Language:Japanese  

  • Alkali-assisted nitridation of Si(001) surfaces studied by metastable de-excitation spectroscopy

    20th European Conference on Surface Science 

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    Event date: 2001.09.06   Language:English  

  • A metastable de-excitation spectroscopy study on the promotion of nitridation by oxygen/alkali pre-adsorbates at Si(100) surfaces

    19th International Conference on Atomic Collision in Solids 

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    Event date: 2001.07.31   Language:English  

  • An STM observation of hydrogen adsorption on the 6H-SiC(000-1)3×3 surface

    11th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques 

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    Event date: 2001.07.17   Language:English  

  • An STM investigation of formation of Bi nanowires on a Si(100) surface

    11th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques 

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    Event date: 2001.07.17   Language:English  

  • Single-crystal phases on Si surfaces

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    Event date: 2001.06.02   Language:English  

  • シリコン表面でのビスマスナノワイヤ自己組織化形成のSTM観察

    第6回九州薄膜・表面セミナー 

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    Event date: 2001.06.02   Language:Japanese  

  • Promotion of nitrogen adsorption on Si(100) by alkali pre-adsorbates studied by metastable de-excitation spectroscopy

    4th Japan-Russia Seminar on Semiconductor Surfaces 

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    Event date: 2000.11.15   Language:English  

  • Scanning tunneling microscopy observation of Bi-dimer linear chains on the Si(100) surface

    19th European Conference on Surface Science 

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    Event date: 2000.09.05 - 2000.09.08   Language:English  

  • STM and LEED observation of hydrogen adsorption on the 6H-SiC(0001)3×3 surface

    19th European Conference on Surface Science 

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    Event date: 2000.09.05 - 2000.09.08   Language:English  

  • Si(100)表面上のビスマス一次元構造のSTM観察

    九州薄膜・表面セミナー(兼第5回九州薄膜・表面研究会) 

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    Event date: 2000.06.03   Language:Japanese  

  • Si(100)表面上のBiダイマー鎖構造形成のSTM観察

    本人

    第47回応用物理学関係連合講演会 

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    Event date: 2000.03.28   Language:Japanese  

  • MDSによるSi(100)表面窒素化へのK,O吸着効果の研究

    日本物理学会2000年春の分科会 

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    Event date: 2000.03.24   Language:Japanese  

  • Formation of Bi-dimer linear chains on a Si(100) surface studied by STM

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    Event date: 1999.12.17   Language:English  

  • TOF-ICISSを用いたSi(100)表面上Bi吸着層の構造解析

    平成11年度応用物理学会九州支部学術講演会 

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    Event date: 1999.12.05   Language:Japanese  

  • MDSによるSi(100)表面窒素化へのK,O吸着効果の研究

    平成11年度応用物理学会九州支部学術講演会 

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    Event date: 1999.12.05   Language:Japanese  

  • スピン偏極ヘリウム準安定原子脱励起分光装置の試作

    平成11年度応用物理学会九州支部学術講演会 

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    Event date: 1999.12.05   Language:Japanese  

  • 準安定原子脱励起分光を用いた表面最外層電子状態の抽出

    第3回実用表面分析講演会 

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    Event date: 1999.11.05   Language:Japanese  

  • A new surface phase in the 6H-SiC(0001) surface studied by scanning tunneling microscopy

    7th International Conference on the Formation of Semiconductor Interfaces 

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    Event date: 1999.06.22   Language:English  

  • 6H-SiC(0001)表面の2√3×2√13構造:STM研究

    薄膜・表面の機能・物性研究会 

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    Event date: 1999.06.05   Language:Japanese  

  • 走査トンネル顕微鏡によるSiC(0001)表面構造解析

    本人

    第46回応用物理学関係連合講演会 

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    Event date: 1999.03.29   Language:Japanese  

  • 準安定原子脱励起分光法による半導体表面上のCs吸着とその酸化促進効果の研究

    第54回日本物理学会年会 

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    Event date: 1999.03.29   Language:Japanese  

  • Si(111)7×7表面上のK吸着過程:中被覆度領域での吸着構造解析

    日本物理学会1998年秋の分科会 

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    Event date: 1998.09.26   Language:Japanese  

  • Si(100)表面におけるBi誘起新構造のSTM観察

    本人

    日本物理学会1998年秋の分科会 

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    Event date: 1998.09.26   Language:Japanese  

  • Spin-polarized metastable deexcitation spectroscopy at Ni(110) probing surface spin DOS

    3rd Russia-Japan Seminar on Semiconductor Surfaces 

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    Event date: 1998.09.21   Language:English  

  • Local charge redistribution at potassium adsorption on the Si(111)7×7 surface: a scanning tunneling microscopy

    14th International Vacuum Congress and 10th International Conference on Solid Surfaces 

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    Event date: 1998.09.01   Language:English  

  • Strain relaxation of bismuth thin films on the Si(100) surface studied by scanning tunneling microscopy

    9th International Conference on Solid Films and Surfaces 

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    Event date: 1998.07.07   Language:English  

  • Si(111)7×7表面上K吸着の構造と電子状態変化:STM観察

    第3回九州薄膜・表面研究会 

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    Event date: 1998.06.06   Language:Japanese  

  • スピン偏極MDSの開発とNi(110)表面スピン状態分析への応用

    第3回九州薄膜・表面研究会 

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    Event date: 1998.06.06   Language:Japanese  

  • スピン偏極He*を用いたNi(110)表面電子状態解析

    第53回日本物理学会年会 

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    Event date: 1998.03.31   Language:Japanese  

  • Si(111)7×7表面上のK吸着過程の走査トンネル顕微鏡による研究

    第45回応用物理学関係連合講演会 

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    Event date: 1998.03.28   Language:Japanese  

  • An STM/STS observation of the adsorption process of potassium on the Si(111) 7×7 surface

    5th International Colloquium on Scanning Tunneling Microscopy 

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    Event date: 1997.12.12   Language:English  

  • MDSによるGaAs(100)表面上のCs吸着の電子状態

    平成9年度応用物理学会九州支部学術講演会 

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    Event date: 1997.11.30   Language:Japanese  

  • 低速イオン散乱分光法によるGa-rich GaP(001)(2×4)清浄表面の構造解析

    未入力 

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    Event date: 1997.11.30   Language:Japanese  

  • An MDS study of variation in the local electronic structure during alkali-promoted oxygenation of GaAs(001) surfaces

    4th International Symposium on Atomically Controlled Surfaces and Interfaces 

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    Event date: 1997.10.28   Language:English  

  • Li+ and Na+ ion scattering study on the structure of the Ga-rich GaP(001)(4×2) surface

    4th International Symposium on Atomically Controlled Surfaces and Interfaces 

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    Event date: 1997.10.28   Language:English  

  • Bi蒸着Si表面における水素吸着過程のSTM観察

    本人

    日本物理学会1997年秋の分科会 

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    Event date: 1997.10.07   Language:Japanese  

  • MDSによるSi(111)表面上Cs吸着の電子状態変化と酸化初期過程

    日本物理学会1997年秋の分科会 

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    Event date: 1997.10.07   Language:Japanese  

  • Ga-rich GaP(001)(4×2) surface structure studied by low-energy ion scattering spectroscopy

    17th European Conference on Surface Science 

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    Event date: 1997.09.17   Language:English  

  • Coadsorption of cesium and oxygen on GaAs(001) surfaces studied by metastable deexcitation spectroscopy

    17th European Conference on Surface Science 

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    Event date: 1997.09.17   Language:English  

  • An STM/STS investigation of the adsorption process of potassium on the Si(111) 7×7 surface

    9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques 

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    Event date: 1997.07.22   Language:English  

  • Development of alkali-induced electronic states at GaAs(001) surfaces and their electron-transfer interaction with helium metastable atoms

    44th International Field Emission Symposium 

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    Event date: 1997.07.10   Language:English  

  • Hydrogen-induced reordering of the Si(111)(√3×√3)-Bi surface studied by scanning tunneling microscopy

    6th International Conference on the Formation of Semiconductor Interfaces 

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    Event date: 1997.06.24   Language:English  

  • Si(111),(100)表面へのBi吸着のSTM研究

    第2回九州薄膜・表面研究会 

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    Event date: 1997.06.07   Language:Japanese  

  • 化合物半導体表面における吸着水素の表面変性効果に関する研究

    本人

    財団法人新世代研究所第4回研究助成成果報告会 

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    Event date: 1997.05.22   Language:Japanese  

  • アルカリイオン散乱によるGaP(001)4×2表面構造の解析

    第52回日本物理学会年会 

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    Event date: 1997.03.29   Language:Japanese  

  • アルカリ金属吸着シリコン表面の構造及び電子状態の走査トンネル顕微鏡観察

    本人

    第52回日本物理学会年会 

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    Event date: 1997.03.29   Language:Japanese  

  • Cs/GaAs(001)表面上の酸素吸着の準安定原子脱励起分光

    第52回日本物理学会年会 

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    Event date: 1997.03.29   Language:Japanese  

  • 原子状水素吸着によるBi蒸着Si(111)表面の構造変化過程のSTM観察

    本人

    第44回応用物理学関係連合講演会 

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    Event date: 1997.03.28   Language:Japanese  

  • スピン偏極MDSによるNi(110)表面の電子状態検出

    日本物理学会1996年秋の分科会 

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    Event date: 1996.10.03   Language:Japanese  

  • GaAs(001)表面上のアルカリ金属・酸素共吸着系の表面局所電子状態

    日本物理学会1996年秋の分科会 

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    Event date: 1996.10.03   Language:Japanese  

  • Bi/Si(100)面の走査トンネル顕微鏡観察

    日本物理学会1996年秋の分科会 

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    Event date: 1996.10.03   Language:Japanese  

  • Scanning tunneling microscopy observation of the Si(100)1×1-Bi structure

    16th European Conference on Surface Science 

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    Event date: 1996.09.10   Language:English  

  • GaAs(001)表面上の酸素とアルカリ金属共吸着の準安定原子脱励起分光法による研究

    第57回応用物理学会学術講演会 

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    Event date: 1996.09.07   Language:Japanese  

  • An ISS study on the reconstruction of GaP(001)4×2 surfaces

    5th International Conference on the Structure of Surfaces 

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    Event date: 1996.07.11   Language:English  

  • Cs and oxygen adsorption on Ge and GaAs surfaces studied by metastable deexcitation spectroscopy

    5th International Conference on the Structure of Surfaces 

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    Event date: 1996.07.10   Language:English  

  • 金属/半導体界面における水素誘起構造変態(STM)

    本人

    第1回九州薄膜・表面研究会 

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    Event date: 1996.06.08   Language:Japanese  

  • GaP(001)清浄及び水素処理面のSTM/STS観察

    第51回日本物理学会年会 

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    Event date: 1996.03.31   Language:Japanese  

  • Ge(001)表面上の酸素・アルカリ金属共吸着系の表面局所電子状態

    第51回日本物理学会年会 

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    Event date: 1996.03.31   Language:Japanese  

  • GaP(001)清浄表面及び水素処理による再配列構造のSTM/LEED/ISS観察

    本人

    第43回応用物理学関係連合講演会 

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    Event date: 1996.03.26   Language:Japanese  

  • Reconstruction of the GaP(001) surface studied by scanning tunneling microscopy

    2nd Japan-Russia Seminar on Semiconductor Surfaces 

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    Event date: 1995.11.15   Language:English  

  • GaP(001)清浄及びアルカリ金属吸着表面のISS/LEED観察

    日本物理学会1995年秋の分科会 

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    Event date: 1995.09.30   Language:Japanese  

  • An STM observation of silver growth on hydrogen-terminated Si(111) surfaces

    13th International Vacuum Congress and 9th International Conference on Solid Surfaces 

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    Event date: 1995.09.27   Language:English  

  • Interaction of oxygen with alkali metals at the Ge(001) surface studied by metastable deexcitation spectroscopy

    13th International Vacuum Congress and 9th International Conference on Solid Surfaces 

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    Event date: 1995.09.27   Language:English  

  • Reconstruction of the GaP(001) surface studied by STM

    13th International Vacuum Congress and 9th International Conference on Solid Surfaces 

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    Event date: 1995.09.27   Language:English  

  • A metastable deexcitation spectroscopy study on the oxygenation of alkalated Ge(001) surfaces

    International Symposium on Dynamical Quantum Processes on Solid Surfaces 

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    Event date: 1995.09.01   Language:English  

  • シリコン表面上の金属・水素共吸着系のSTM/STS観察

    内藤正路

    第50回日本物理学会年会 

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    Event date: 1995.03.28   Language:Japanese  

  • Interaction of oxygen and alkali metals with Si(100) or Ge(100) surfaces studied with a helium metastable-atom beam

    2nd International Symposium on Advanced Materials 

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    Event date: 1995.03.15   Language:English  

  • シリコン表面水素のイオンビーム定量並びに薄膜形成に及ぼす影響

    本人

    第10回局所表面分析懇話会 

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    Event date: 1995.02.17   Language:Japanese  

  • 低温におけるSi表面吸着水素のERDA観察

    前田泰宏

    日本物理学会1994年秋の分科会 

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    Event date: 1994.09.02 - 1994.09.05   Language:Japanese  

  • Low temperature adsorption of hydrogen on Si(111) and (100) surfaces studied by elastic recoil detection analysi

    3rd International Symposium on Atomic Layer Epitaxy and Related Surface Processes 

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    Event date: 1994.05.25 - 1994.05.27   Language:English  

  • 低温におけるSi基板表面水素の挙動のERDA/LEED観察

    内藤正路

    第41回応用物理学関係連合講演会 

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    Event date: 1994.03.28 - 1994.03.31   Language:Japanese  

  • `Heavy-ion RBS/ERDA studies on the growth of silver on hydrogen-terminated Si(111) surfaces

    1st International Symposium on Control of Semiconductor Interfaces 

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    Event date: 1993.11.08 - 1993.11.12   Language:English  

  • Si(111)面上のAg膜成長に及ぼす表面水素の影響の重イオンRBSによる観察

    内藤正路

    第54回応用物理学会学術講演会 

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    Event date: 1993.09   Language:Japanese  

  • Si(100)面上のAg膜成長過程に及ぼす表面水素の影響

    森岡 肇

    第40回応用物理学関係連合講演会 

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    Event date: 1993.03.29 - 1993.04.01   Language:Japanese  

  • Si(100)面上の水素吸着過程

    内藤正路

    第48回日本物理学会年会 

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    Event date: 1993.03.29 - 1993.04.01   Language:Japanese  

  • Ag膜成長初期過程におけるSi基板表面水素のERDA観察

    森岡 肇

    日本物理学会1992年秋の分科会 

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    Event date: 1992.09.25 - 1992.09.28   Language:Japanese  

  • Coadsorption study of hydrogen and deuterium on Si(100) surfaces by elastic recoil detection analysis technique

    3rd ISSP International Symposium on Dynamical Processes at Solid Surfaces 

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    Event date: 1992.04   Language:English  

  • ERDA/LEEDによるAl/Si(111)-√7×√7表面への水素吸着の研究

    内藤正路

    第39回応用物理学関係連合講演会 

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    Event date: 1992.03.28 - 1992.03.31   Language:Japanese  

  • UHV-STMによるSi表面観察(II);√3-Ag表面の水素誘起クラスタ形成

    片山逸雄

    第39回応用物理学関係連合講演会 

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    Event date: 1992.03.28 - 1992.03.31   Language:Japanese  

  • Hydrogen-induced reordering of the Si(111)-√3×√3-Al surface studied by ERDA/LEED

    1st International Symposium on Atomically Controlled Surfaces and Interfaces 

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    Event date: 1991.11.19 - 1991.11.22   Language:English  

  • ERDA/LEEDによるAl単原子層蒸着Si表面への水素吸着の研究

    内藤正路

    第52回応用物理学会学術講演会 

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    Event date: 1991.10.09 - 1991.10.12   Language:Japanese  

  • Al単原子層蒸着Si面上に及ぼす水素吸着の影響のLEED観察

    大西秀朗

    第46回日本物理学会年会 

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    Event date: 1991.09.27 - 1991.09.30   Language:Japanese  

  • 高エネルギーイオンERDAによるSi(100)面上での吸着H,Dの振舞いに関する研究

    内藤正路

    第46回日本物理学会年会 

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    Event date: 1991.09.27 - 1991.09.30   Language:Japanese  

  • 高エネルギーイオンERDAとLEEDによる水素、重水素吸着Si単結晶表面の研究

    内藤正路

    日本物理学会1991年春の分科会 

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    Event date: 1991.03.28 - 1991.03.31   Language:Japanese  

  • 水素終端Si(111)表面上におけるAgの成長様式のSEM観察

    内藤正路

    第38回応用物理学関係連合講演会 

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    Event date: 1991.03   Language:Japanese  

  • 高エネルギーイオンERDAとLEEDによる水素ターミネートSi(111)面上の金属膜成長過程

    内藤正路

    第31回真空に関する連合講演会 

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    Event date: 1990.10.24 - 1990.10.26   Language:Japanese  

  • ERDA/LEEDによるAu単原子層蒸着Si(111)表面への水素吸着の研究

    内藤正路

    第51回応用物理学会学術講演会 

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    Event date: 1990.09.26 - 1990.09.29   Language:Japanese  

  • Hydrogen-termination effect on the growth of Ag thin films on Si(111) surface

    YAMADA Conference 26 

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    Event date: 1990.07.02 - 1990.07.06   Language:English  

  • 水素吸着したSi(111)表面上におけるAgのエピタキシャル成長のLEED観察

    尾浦憲治郎

    第45回日本物理学会年会 

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    Event date: 1990.03   Language:Japanese  

  • 水素ターミネーションによるSi(111)基板上への金属膜成長初期過程の制御

    内藤正路

    第37回応用物理学関係連合講演会 

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    Event date: 1990.03   Language:Japanese  

  • ERDA/LEEDによるSi(111)-√3×√3Ag表面への水素吸着

    尾浦憲治郎

    日本物理学会1989年秋の分科会 

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    Event date: 1989.10   Language:Japanese  

  • ERDA/LEEDによるAg単原子層蒸着Si(111)表面への水素吸着の研究

    内藤正路

    第50回応用物理学会学術講演会 

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    Event date: 1989.09.27 - 1989.09.30   Language:Japanese  

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Honors and Awards

  • VSJ The Vacuum Progress Award

    2001.10.17

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    Country:Japan

Grants-in-Aid for Scientific Research

  • シリコンカーバイド基板上での高密度高配向ピーポッドの創製

    Grant number:19510118  2007.04 - 2009.03   基盤研究(C)

  • 水素―表面反応基礎過程:スピン効果、反応ダイナミックス、及び星間水素分子の起源

    Grant number:17002011  2005.04 - 2010.03   特別推進研究

  • 高配向・高密度カーボンナノチューブの自己組織化形成とナノデバイス応用

    Grant number:16310089  2004.04 - 2007.03   基盤研究(B)

  • 一次元原子鎖制御によるシリコン・ナノアーキテクチャ

    Grant number:15651056  2003.04 - 2005.03   萌芽研究・萌芽的研究

  • 表面最外層領域で準安定原子・イオンにより誘起されたオージェ電子の回折と局所構造

    Grant number:13440098  2001.04 - 2004.03   基盤研究(B)

  • SiC表面上でのカーボンナノチューブ生成機構の解明と表面変性による生成の制御

    Grant number:13650028  2001.04 - 2003.03   基盤研究(C)

  • 固体表面でのイオン・準安定原子の中性化・脱励起における集団的励起

    Grant number:12640317  2000.04 - 2003.03   基盤研究(C)

  • 超低速イオンビーム蒸着によるSi表面低次元相形成とエピタキシーの研究

    Grant number:12650033  2000.04 - 2002.03   基盤研究(C)

  • 半導体表面変性における水素原子の能動的作用の原子スケ-ル解析

    Grant number:09750035  1997.04 - 1999.03   奨励研究(A)

  • スピン編極ヘリウム準安定原子ビームによる表面最外原子層磁気秩序の解明

    Grant number:08454083  1996.04 - 1999.03   基盤研究(B)

  • STM-STS法による化合物半導体表面における吸着水素の表面変性効果に関する研究

    Grant number:08750037  1996.04 - 1997.03   奨励研究(A)

  • STM-STS法による半導体表面における吸着水素原子の表面変性効果に関する研究

    Grant number:07750039  1995.04 - 1996.03   奨励研究(A)

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Contracts

  • 炭素系新材料の創製と評価

    2013.10 - 2017.03

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    Grant type:Other joint research

Charge of off-campus class subject

  • Institution:福岡工業大学

Activities of Academic societies and Committees

  • The Surface Science Society of Japan  

    2022.04 - 2024.03

  • The Japan Society of Vacuum and Surface Science  

    2020.04 - 2022.03

  • The Japan Society of Vacuum and Surface Science  

    2018.04 - 2020.03

  • The Surface Science Society of Japan  

    2016.04 - 2018.03

  • The Vacuum Society of Japan  

    2014.01 - 2018.03

  • The Japan Society of Applied Physics  

    2009.04

  • The Surface Science Society of Japan  

    2009.04 - 2016.03

  • The Vacuum Society of Japan  

    2008.01 - 2010.12

  • The Japan Society of Applied Physics  

    2006.04 - 2008.03

  • The Japan Society of Applied Physics  

    2006.04 - 2007.03

  • The Surface Science Society of Japan  

    2003.04 - 2005.03

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Social activity outside the university

  • 学研都市サイエンスカフェ

    2013.08.20

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    Type:Science cafe

    講師:内藤正路
    主催者:北九州産業技術推進機構
    役割:企画、運営等
    会場:黒崎コムシティ

  • 第53回九州工業大学ジュニア・サイエンス・スクール

    2011.12.03

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    Type:Seminar, workshop

    講師:内藤正路、学部生、大学院生
    主催者:九州工業大学
    役割:企画、運営等
    会場:九州工業大学戸畑キャンパス

  • カーボンナノチューブによる半導体ナノテクノロジー -カーボンナノチューブとは?-

    2010.07.14

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    Audience: High school students

    Type:Visiting lecture

    福岡県立新宮高等学校 1年~3年  

  • カーボンナノチューブによる半導体ナノテクノロジー -カーボンナノチューブとは?-

    2010.06.10

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    Type:Visiting lecture

    第一高等学院小倉校 1年~3年