論文 - 佐竹 昭泰
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Enhanced capture of photogenerated carriers by optimum forward bias condition in blue and green (In,Ga)N single-quantum-well diodes 査読有り
A. Satake,K. Soejima,H. Aizawa,K. Fujiwara
physica status solidi (c) 5 ( 6 ) 2123 - 2125 2008年05月
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Comparative study of temperature-dependent electroluminescence efficiency in blue and green (In,Ga)N multiple-quantum-well diodes 査読有り
H. Jimi,T. Inada,M. Horiguchi,A. Satake,K. Fujiwara
physica status solidi (c) 5 ( 6 ) 2105 - 2107 2008年05月
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Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes 査読有り
T. Inada,A. Satake,and K. Fujiwara
Physica Status Solidi (c) 4 ( 7 ) 2768 - 2771 2007年04月
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Vertical transport in all-binary GaAs/AlAs short-period superlattices and carrier trapping and detrapping dynamics by different quantum wells 査読有り
K. Fujiwara,A. Satake,L. Schrottke,R. Hey,and H. T. Grahn
Physica Status Solidi (b) 244 ( 8 ) 2926 - 2935 2007年04月
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Carrier capture and escape processes in (In,Ga)N single-quantum-well diode under forward bias condition by photoluminescence spectroscopy 査読有り
A. Satake,K. Soejima,H. Aizawa,and K. Fujiwara
Physica Status Solidi (c) 3 ( 6 ) 2203 - 2206 2006年04月
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Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes 査読有り
H. Aizawa,K. Soejima,A. Hori,A. Satake,and K. Fujiwara
Physica Status Solidi (c) 3 ( 3 ) 589 - 593 2006年02月
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Stokes and anti-Stokes photoluminescence towards five different Inx(Al0.17Ga0.83)1-xAs/ Al0.17Ga0.83As quantum wells 査読有り
S. Machida,T. Tadakuma,A. Satake,K. Fujiwara,J.R. Folkenberg,J.M. Hvam
Journal of Applied Physics 98 ( 8 ) 83527 - 83527 2005年04月
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“Enhanced radiative efficiency in blue (In,Ga)N multiple-quantum-well light-emitting diodes with an electron reservoir layer” 査読有り
Y. Takahashi,A. Satake,K. Fujiwara,J. K. Shue,U. Jahn,H. Kostial and H. T. Grahn
Physica E 21 876 - 880 2004年04月
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“Strong photoluminescence emission from an excited-subband exciton state in a GaAs/AlxGa1-xAs triple quantum well with different well thicknesses” 査読有り
A. Satake,N. Shiraishi,N. Takata,K. Fujiwara,L. Schrottke,and H. T. Grahn
Physica E 21 641 - 645 2004年04月
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“Temperature-dependent electroluminescence anomalies influenced by injection current level in InGaN single-quantum-well diodes” 査読有り
P. Bakmiwewa,A. Hori,A. Satake and K. Fujiwara
Physica E 21 636 - 640 2004年04月
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"Ultra-low-frequency self-oscillation of photocurrent in InxGa1-xAs/Al0.15Ga0.85As multiple-quantum-well p-i-n diodes" 査読有り
A. Satake,K. Tanigawa,T. Kimura,K. Fujiwara,and N. Sano
Appl. Phys. Lett. 85 3483 - 3485 2004年04月
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High-energy excitonic photoluminescence due to carrier injection from the barriers into the first excited subband in a GaAs/AlxGa1-xAs quantum well 査読有り
T. Tsukamoto,N. Shiraishi,A. Satake,K. Fujiwara,and H. T. Grahn
Proceedings of 13th International Semiconducting and Insulating Materials Conference 271 - 275 2004年04月
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Observation of ultra-low frequency photocurrent self-oscillation in InXGa1-XAs quantum wells 査読有り
K. Tanigawa,T. Kimura,A. Satake,K. Fujiwara,and N. Sano
Proceedings of 16th International Conference on Indium Phosphide and Related Materials 268 - 271 2004年04月
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Competitive capture of photoexcited carriers in a novel step-graded InX(Al0.17Ga0.83)1-XAs quantum well heterostructure 査読有り
T. Tadakuma,S. Machida,A. Satake,K. Fujiwara,J.R. Folkenberg and J.M. Hvam
Proceedings of 16th International Conference on Indium Phosphide and Related Materials 257 - 260 2004年04月
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Impact of the forward bias on the radiative recombination efficiency in blue (In,Ga)N/GaN quantum-well diodes with an electron reservoir layer 査読有り
N. Otsuji,Y. Takahashi,A. Satake,K. Fujiwara,J. K. Shue,U. Jahn,H. Kostial,and H. T. Grahn
Proceedings of 13th International Semiconducting and Insulating Materials Conference 276 - 280 2004年04月
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“Asymmetric external electric field effects on luminescence intensity of InGaN single-quantum-well light-emitting diode” 査読有り
A. Satake,A. Hori,Y. Takahashi,D. Yasunaga and K. Fujiwara
Inst. Phys. Conf. Ser. 171 D110 - D110 2003年04月
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“Temperature and injected current dependence of electroluminescence intensity in green and blue InGaN single-quantum-well light-emitting diodes” 査読有り
A. Hori,D. Yasunaga,A. Satake and K. Fujiwara
J. Appl. Phys. 93 3152 - 3157 2003年04月
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“Temperature and current dependent capture injected carriers in InGaN single-quantum-well light-emitting diodes” 査読有り
A. Hori,D. Yasunaga,A. Satake and K. Fujiwara
Phys. Stat. Sol. (a) 192 44 - 48 2002年04月
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“Anomalous temperature dependence of the photoluminescence properties in GaAs triple quantum wells with growth islands” 査読有り
A. Satake,K. Hayata,N. Shiraishi,K. Fujiwara,L. Schrottke,R. Hey and H. T. Grahn
Inst. Phys. Conf. Ser. 170 473 - 478 2002年04月
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“Dynamical transport of photoexcited carriers between a narrow and a wide quantum well embedded in a GaAs/AlAs superlattice” 査読有り
A. Satake,T. Ikemoto,K. Fujiwara,L. Schrottke,R. Hey and H. T. Grahn
Physica E 13 711 - 714 2002年04月