Updated on 2024/05/14

 
WATANABE Akihiko
 
Scopus Paper Info  
Total Paper Count: 0  Total Citation Count: 0  h-index: 5

Citation count denotes the number of citations in papers published for a particular year.

Affiliation
Graduate School of Life Science and Systems Engineering Department of Biological Functions Engineering
Job
Associate Professor
External link

Research Interests

  • Power Electronics

  • Surface Science

  • Power Semiconductor Devices

Undergraduate Education

  • 1994.03   Kyushu Institute of Technology   Faculty of Engineering   Graduated   Japan

Post Graduate Education

  • 1999.03   Kyushu Institute of Technology   Graduate School, Division of Engineering   Doctoral Program   Accomplished Credits for Doctoral Program   Japan

Degree

  • Kyushu Institute of Technology  -  Doctor of Engineering   1999.06

Biography in Kyutech

  • 2020.04
     

    Kyushu Institute of Technology   Graduate School of Life Science and Systems Engineering   Department of Biological Functions Engineering   Associate Professor  

  • 2019.12
    -
    2020.03
     

    Kyushu Institute of Technology   Faculty of Engineering   Department of Electrical and Electronic Engineering   Associate Professor  

  • 2008.04
    -
    2019.11
     

    Kyushu Institute of Technology   Faculty of Engineering   Department of Electrical and Electronic Engineering   Assistant Professor  

Biography before Kyutech

  • 1999.04 - 2003.03   財団法人ファインセラミックスセンター   研究員   Japan

  • 1999.04 - 2003.03   松下電器産業株式会社   研究員   Japan

Academic Society Memberships

  • 1995.01   日本物理学会   Japan

  • 1995.01   応用物理学会   Japan

  • 2017.05   産業応用工学会   Japan

  • 2018.08   Japan New Diamond Forum   Japan

Papers

  • Determination of Abnormality of IGBT Images Using VGG16 Reviewed

    Toui Ogawa, Akihiko Watanabe, Ichiro Omura, Tohru Kamiya

    2021 21st International Conference on Control, Automation and Systems (ICCAS) ( IEEE )   2021.12

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    Language:English   Publishing type:Research paper (international conference proceedings)

    Korea   Jeju  

    DOI: 10.23919/ICCAS52745.2021.9650029

    DOI: 10.23919/ICCAS52745.2021.9650029

  • DUT Temperature Coefficient and Power Cycles to Failure Reviewed

    Yuma Kawauchi, Kenji Akimoto, Akihiko Watanabe, Ichiro Omura

    2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ( IEEE )   2021.05

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    Language:English   Publishing type:Research paper (international conference proceedings)

    DOI: 10.23919/ISPSD50666.2021.9452298

    DOI: 10.23919/ISPSD50666.2021.9452298

  • Improved DICM with an IR camera for Imaging of Strain and Temperature in Cross Section of TO packages Reviewed

    Yoshiki Masuda, Akihiko Watanabe, Ichiro Omura

    2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ( IEEE )   2021.05

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    Language:English   Publishing type:Research paper (international conference proceedings)

    Japan   Nagoya   2021.05.30  -  2021.06.03

    DOI: 10.23919/ISPSD50666.2021.9452304

    DOI: 10.23919/ISPSD50666.2021.9452304

  • Identification of normal and abnormal from ultrasound images of power devices using VGG16 Reviewed

    Ogawa T., Lu H., Watanabe A., Omura I., Kamiya T.

    International Conference on Control, Automation and Systems   2020-October   415 - 418   2020.10

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    Language:English   Publishing type:Research paper (international conference proceedings)

    DOI: 10.23919/ICCAS50221.2020.9268275

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  • Simultaneous Imaging of Strain and Temperature using Single IR Camera Reviewed

    Yoshiki Masuda ; Akihiko Watanabe ; Ichiro Omura

    CIPS 2020; 11th International Conference on Integrated Power Electronics Systems   2020.05

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    Language:English   Publishing type:Research paper (international conference proceedings)

  • Simultaneous imaging of strain and temperature using single IR camera Reviewed

    Masuda Y., Watanabe A., Omura I.

    CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems   565 - 569   2020.01

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  • Infrared image correlation for thermal stress analysis of power devices Reviewed

    Watanabe A., Masuda Y., Omura I.

    Microelectronics Reliability   100-101   2019.09

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    Authorship:Lead author   Language:English   Publishing type:Research paper (international conference proceedings)

    DOI: 10.1016/j.microrel.2019.113414

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  • Convolutional neural network (CNNs) based image diagnosis for failure analysis of power devices Reviewed

    Watanabe A., Hirose N., Kim H., Omura I.

    Microelectronics Reliability   100-101   2019.09

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    Authorship:Lead author   Language:English   Publishing type:Research paper (international conference proceedings)

    DOI: 10.1016/j.microrel.2019.113399

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  • A power cycling degradation inspector of power semiconductor devices Reviewed

    88-90   458 - 461   2018.09

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1016/j.microrel.2018.06.071

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  • Real-time imaging of temperature distribution inside a power device under a power cycling test Reviewed

    76-77   490 - 494   2017.09

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    Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1016/j.microrel.2017.06.092

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  • Failure analysis of power devices based on real-time monitoring Reviewed

    55 ( 9-10 )   2032 - 2035   2015.08

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)

    DOI: 10.1016/j.microrel.2015.06.128

    Scopus

  • Real-time failure monitoring system for high power IGBT under acceleration test up to 500 A stress Reviewed

    A. Watanabe, M. Tsukuda, I. Omura

    Proceedings of The 26th International Symposium on power semiconductor devices and ICS (ISPSD2014)   338 - 341   2014.06

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)

    USA   Hawaii   2014.06.15  -  2014.06.19

    DOI: 10.1109/ISPSD.2014.6856045

    Scopus

  • Internal degradation monitoring of power devices during power cycling test Reviewed

    A. Watanabe, M. Tsukuda, I. Omura

    Proceedings of 8th International Conference on Integrated Power Electronics Systems (CIPS2014)   1 - 6   2014.02

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)

    Germany   Nuremberg   2014.02.25  -  2014.02.27

  • Real time degradation monitoring system for high power IGBT module under power cycling test Reviewed

    A. Watanabe, M. Tsukuda, I. Omura

    Microelectronics Reliability   53 ( 9-11 )   1692 - 1696   2013.09

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)

    DOI: 10.1016/j.microrel.2013.07.084

    Scopus

  • Real Time Failure Imaging System under Power Stress for Power Semiconductors using Scanning Acoustic Tomography (SAT) Reviewed

    A. Watanabe, I. Omura

    Microelectronics Reliability   52 ( 9-10 )   2081 - 2086   2012.09

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)

  • Adsorption and Reaction of Calcium at the Si(111) Surface Studied by Metastable-Induced Electron Spectroscopy Reviewed

    Y. Shirouzu,Y. Kaya,T. Okazaki,A. Watanabe,M. Naitoh,S. Nishigaki,T. Ikari,K. Yamada

    e-Journal of Surface Science and Nanotechnology   5   89 - 93   2007.04

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  • Hydrogen-assisted reduction of the Ni(110)(3×1)-O surface studied by metastable-induced electron spectroscopy Reviewed

    T. Ikari,T. Matsuoka,K. Murakami,T. Kawamoto,K. Yamada,A. Watanabe,M. Naitoh,S. Nishigaki

    Surface Science   601   4418 - 4422   2007.04

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  • Oxidation of a cesium-covered Ni(110) surface studied by a metastable-induced electron spectroscopy Reviewed

    T. Ikari,S. Arikado,K. Kameishi,H. Kawahara,K. Yamada,A. Watanabe,M. Naitoh,S. Nishigaki

    Applied Surface Science   252   5424 - 5427   2006.04

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  • Direct observation of surface potential change due to hydrogen termination of CVD diamond surface by metastable-induced electron spectroscopy Reviewed

    A. Watanabe,S. Nishioka,Y. Shirouzu,K. Yamada,M. Naitoh,S. Nishigaki

    Surface Science   600   3659 - 3662   2006.04

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  • Surface structure dependent reaction of Hydrogen-assisted reduction at O/Ni(110) surfaces studied by MIES and LEED Reviewed

    T. Ikari,K. Kameishi,S. Arikado,H. Kawahara,T. Matsuoka,K. Yamada,A. Watanabe,M. Naitoh,S. Nishigaki

    e-Journal of Surface Science and Nanotechnology   4   170 - 173   2006.04

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  • Hydrogen-assisted reduction of oxidized Ni(110) surfaces studied by metastable-induced electron spectroscopy

    T. Ikari,T. Matsuoka,T. Kawamoto,K. Murakami,K. Yamada,A. Watanabe,M. Naitoh,S. Nishigaki

    Proceedings of the 7th Russia-Japan seminar on semiconductor surfaces   164 - 168   2006.04

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  • Influences of the incident He* velocity on metastable de-excitation processes at a Cs-covered Si(100) surface Reviewed

    T. Ikari,N. Uchino,S. Nishioka,H. Fujiwaki,K. Yamada,A. Watanabe,M. Naitoh and S. Nishigaki

    Nuclear Instruments and Methods in Physics Research   B232   88 - 93   2005.04

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  • Field emission properties of diamond particles: Electron injection into conduction band by tunneling at thin insulating interface layer

    A. Watanabe,T. Ninomiya,S. Nishigaki,M. Kitabatake

    New Diamond and Frontier Carbon Technology   15   21 - 28   2005.04

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  • Observation of electron field emission patterns from B-doped diamond films Reviewed

    K. Kobashi,A. Watanabe,Y. Ando,Y. Nishibayashi,Y. Yokota,T. Hirao,K. Oura,C. Ichihara,A. Kobayashi

    Diamond & Related Materials   13   2113 - 2116   2004.04

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  • Adsorption of Ca on the Si(111) surface and its reaction with the Si substrate studied by AES and MIES

    T. Inoue,N. Uchino,R. Yoshida,S. Nishioka,K. Yamada,A. Watanabe,M. Naitoh,S. Nishigaki

    Proceedings of the 6th Japan-Russia Seminar on Semiconductor Surfaces   33 - 40   2004.04

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  • Metastable-induced electron spectroscopy study of hydrogen terminated CVD diamond surface

    A. Watanabe,S. Nishioka,N. Uchino,K. Yamada,M. Naitoh,S. Nishigaki

    Proceedings of the 6th Japan-Russia Seminar on Semiconductor Surfaces   278 - 281   2004.04

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  • Field emission from diamond particles studied by scanning field emission microscopy Reviewed

    A. Watanabe,M. Deguchi,M. Kitabatake,S. Kono

    Ultramicroscopy   95   145 - 151   2003.04

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  • 絶縁層を用いたダイヤモンド粒子伝導帯への電子注入機構

    渡邉晃彦,北畠真

    New Diamond   ( 69 )   24 - 25   2003.04

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    Language:Japanese   Publishing type:Research paper (scientific journal)

  • Field emission properties of diamond particles

    A. Watanabe,M. Deguchi,M. Kitabatake

    New Diamond and Frontier Carbon Technology   13   31 - 46   2003.04

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  • Large area deposition of <100>-textured diamond films by a 60-kW microwave plasma CVD reactor Reviewed

    Y. Ando,Y. Yokota,T. Tachibana,A. Watanabe,Y. Nishibayashi,K. Kobashi,T. Hirao,K. Oura

    Diamond and Related Materials   11   596 - 600   2002.04

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  • ダイヤモンドからの電子放出特性

    渡邉 晃彦

    第2回炭素系高機能材料シンポジウム予稿集   87 - 93   2002.04

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  • Growth of <100> oriented polycrystalline diamond films of 6 inch diameter

    Y. Yokota,Y. Ando,A. Watanabe,Y. Nishibayashi,K. Kobashi,T. Hirao,K. Oura

    New Diamond and Frontier Carbon Technology   12   117 - 120   2002.04

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  • Secondary-electron and field-emission spectroscopy/microscopy studies of chemical vapor deposition grown diamond particles Reviewed

    S. Kono,T. Goto,K. Sato,T. Abukawa,M. Kitabatake,A. Watanabe,M. Deguchi

    Surface Science   493   610 - 618   2001.04

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  • Microscopic study of field emission from diamond particles Reviewed

    A. Watanabe,M. Deguchi,M. Kitabatake

    Diamond and Related Materials   10   818 - 823   2001.04

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  • Diamond films grown by a 60kW microwave plasma CVD system Reviewed

    T. Tachibana,Y. Ando,A. Watanabe,Y. Nishibayashi,K. Kobashi,T. Hirao,K. Oura

    Diamond and Related Materials   10   1569 - 1572   2001.04

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  • Field-emission spectroscopy/microscopy studies of chemical-vapor-deposition grown diamond particles

    S. Kono,T. Goto,K. Sato,T. Abukawa,M. Kitabatake,A. Watanabe,M. Deguchi

    New Diamond and Frontier Carbon Technology   11   299 - 306   2001.04

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  • Local charge redistribution at potassium adsorption on the Si(111)7x7 surface: a scanning tunneling microscopy study Reviewed

    A. Watanabe,M. Naitoh,S. Nishigaki

    Applied Surface Science   144/145   548 - 553   1999.04

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  • Field Emission from Diamond Particles

    M. Kitabatake,A. Watanabe,M. Deguchi

    Proceedings of ADC/FCT'99   376 - 379   1999.04

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  • Hydrogen-induced restructuring and crater formation at Si(111) surfaces: a scanning tunneling microscopy study Reviewed

    M. Naitoh,H. Shimaya,A. Watanabe,S. Nishigaki

    Japanese Journal of Applied Physiscs   37   2033 - 2034   1998.04

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  • A scanning tunneling microscopy investigation of the adsorption and clustering of potassium on the Si(111)7x7 surface Reviewed

    A. Watanabe,M. Naitoh,S. Nishigaki

    Japanese Journal of Applied Physics   37   3778 - 3781   1998.04

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  • A clean GaP(001)4x2/c(8x2) surface structure studied by scanning tunneling microscopy and ion scattering spectroscopy Reviewed

    M. Naitoh,A. Watanabe,A. Konishi,S. Nishigaki

    Japanese Journal of Applied Physics   35   4789 - 4790   1996.04

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  • An STM observation of silver growth on hydrogen-terminated Si(111) surfaces Reviewed

    M. Naitoh,A. Watanabe,S. Nishigaki

    Surface Science   357/358   140 - 144   1996.04

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  • Hydrogen-induced reconstruction of the GaP(001) surface studied by scanning tunneling microscopy Reviewed

    A. Watanabe,H. Shimaya,M. Naitoh,S. Nishigaki

    Journal of Vacuum Science & Technology   B14   3599 - 3602   1996.04

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▼display all

Conference Prsentations (Oral, Poster)

  • Influence of Fabrication Process on Characteristics of Diamond Vertical pin Diodes

    S. Goto, A. Watanabe

    10th International Symposium on Applied Engineering and Sciences (SAES2022) 

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    Event date: 2022.12.12 - 2022.12.14   Language:English  

  • Snapback of diamond p-n-p structure

    K. Mishima, Y. Matsumoto and A. Watanabe

    10th International Symposium on Applied Engineering and Sciences (SAES2022) 

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    Event date: 2022.12.12 - 2022.12.14   Language:English  

  • ダイヤモンドpip構造のスナップバック現象

    松本有吾,後藤成雅,渡邉晃彦

    第36回ダイヤモンドシンポジウム 

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    Event date: 2022.11.16 - 2022.11.18   Language:Japanese  

  • n型を起点としたプロセスで作製したダイヤモンドpinダイオードの特性評価

    後藤成雅,渡邉晃彦

    第36回ダイヤモンドシンポジウム 

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    Event date: 2022.11.16 - 2022.11.18   Language:Japanese  

  • TEG design for improving withstanding voltage of diamond power devices

    Y. Matsumoto, A. Watanabe

    8th International Symposium on Applied Engineering and Sciences (SAES2021)  2021.12 

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    Event date: 2021.12.05 - 2021.12.08   Language:English  

  • Determination of Abnormality of IGBT Images Using VGG16

    Toui Ogawa, Akihiko Watanabe, Ichiro Omura, Tohru Kamiya

    21th International Conference on Control, Automation and Systems (ICCAS 2021)  2021.10 

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    Event date: 2021.10.12 - 2021.10.15   Language:English   Country:Korea, Republic of  

  • DUT Temperature Coefficient and Power Cycles to Failure

    Yuma Kawauchi, Kenji Akimoto, Akihiko Watanabe, Ichiro Omura

    33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD2021)   2021.06 

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    Event date: 2021.05.30 - 2021.06.03   Language:English   Country:Japan  

  • Improved DICM with an IR Camera for Imaging of Strain and Temperature in Cross Section of to Packages

    Yoshiki Masuda, Akihiko Watanabe, Ichiro Omura

    33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD2021)   2021.06 

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    Event date: 2021.05.30 - 2021.06.03   Language:English   Country:Japan  

  • 薄層SOIパワーnMOSFETとpMOSFETのホットキャリア効果の⽐較

    有吉和⿇、松本 聡、渡邉晃彦

    電気学会、電子デバイス・半導体電力変換合同研究会「パワーデバイス・パワーエレクトロニクスとその実装技術」 

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    Event date: 2020.12.21 - 2020.12.22   Language:Japanese  

  • パワーサイクル試験の高精度化に向けた研究

    川内勇真、渡邉晃彦、大村一郎

    電気学会、電子デバイス・半導体電力変換合同研究会「パワーデバイス・パワーエレクトロニクスとその実装技術」 

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    Event date: 2020.12.21 - 2020.12.22   Language:Japanese  

  • 赤外線カメラを使用したパワー半導体の歪みと温度の同時モニタリング

    増田貴樹、渡邉晃彦、大村一郎

    電気学会、電子デバイス・半導体電力変換合同研究会「パワーデバイス・パワーエレクトロニクスとその実装技術」 

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    Event date: 2020.12.21 - 2020.12.22   Language:Japanese  

  • Simultaneous Monitoring of Strain and Temperature for Power Semiconductor using Single IR Camera

    Y. Masuda, A. Watanabe and I. Omura

    8th International Symposium on Applied Engineering and Sciences (SAES2020) 

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    Event date: 2020.12.12 - 2020.12.19   Language:English  

  • Identification of normal and abnormal from ultrasound images of power devices using VGG16

    T. Ogawa, H. Lu, A. Watanabe, I. Omura and T. Kamiya

    20th International Conference on Control, Automation and Systems (ICCAS 2020)  2020.10 

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    Event date: 2020.10.13 - 2020.10.16   Language:English   Country:Korea, Republic of  

  • Simultaneous Imaging of Strain and Temperature using Single IR Camera

    Y. Masuda, A. Watanabe and I. Omura

    11th International Conference on Integrated Power Electronics Systems (CIPS2020)  2020.03 

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    Event date: 2020.03.24 - 2020.03.26   Language:English   Country:Germany  

  • Development of Ultra-high-speed Chip Surface Temperature Distribution Imaging System for High Robustness Design of Power Semiconductors

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    Event date: 2019.11.28 - 2019.11.29   Language:Japanese  

  • 薄層SOIパワーn MOSFETの高温でのACホットキャリア効果

    有吉和麻

    (第72回)電気・情報関係学会九州支部連合大会 

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    Event date: 2019.09.27 - 2019.09.28   Language:Japanese  

  • 高温におけるpチャネル薄層SOIパワーMOSFETのホットキャリア効果

    金田宜政

    (第72回)電気・情報関係学会九州支部連合大会 

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    Event date: 2019.09.27 - 2019.09.28   Language:Japanese  

  • Convolutional neural network (CNNs) based image diagnosis for failure analysis of power devices

    Akihiko Watanabe, Naoto Hirose, Hyoungseop Kim and Ichiro Omura

    30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF2019)  2019.09 

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    Event date: 2019.09.23 - 2019.09.26   Language:English   Country:France  

  • Infrared image correlation for thermal stress analysis of power devices

    Akihiko Watanabe, Yoshiki Masuda and Ichiro Omura

    30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF2019)  2019.09 

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    Event date: 2019.09.23 - 2019.09.26   Language:English   Country:France  

  • DC Hot carrier effect of a thin-film SOI Power p-MOSFET at high temperature

    6th International Symposium on Applied Engineereing and Sciences (SAES2018) 

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    Event date: 2018.12.15 - 2018.12.16   Language:English  

  • Real-Time Monitoring for Improvement of Reliability of Power Devices

    6th International Symposium on Applied Engineereing and Sciences (SAES2018) 

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    Event date: 2018.12.15 - 2018.12.16   Language:English  

  • Combined failure analysis system by simultaneous observation of mechanical, thermal and electrical characteristics

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    Event date: 2018.11.01 - 2018.11.02   Language:Japanese  

  • A power cycling degradation inspector of power semiconductor devices

    29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF2018) 

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    Event date: 2018.10.01 - 2018.10.05   Language:English  

  • Device destruction during AC stree of a thin-film SOI power nMOSFET

    M.Nomura

    International Symposium on Applied Engineereing and Sciences (SAES2017) 

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    Event date: 2017.11.14 - 2017.11.15   Language:English  

  • TOパッケージダイオードのリアルタイムモニタリング評価

    諸岡幸一郎

    先進パワー半導体分科会 第4回講演会 

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    Event date: 2017.11.01 - 2017.11.02   Language:Japanese  

  • Real-time imaging of temperature distribution inside a power device under a power cycling test

    A. Watanabe

    28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF2017) 

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    Event date: 2017.09.25 - 2017.09.28   Language:English  

  • Temperature Distribution Imaging inside Power Devices by Real-Time Simulation by Real-Time Simulation

    A. Watanabe

    2017 International Conference on Solid State Devices and Materials (SSDM2017) 

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    Event date: 2017.09.19 - 2017.09.22   Language:English  

  • AC Hot carrier effect and PBTI of a thin-film SOI Power n-MOSFET at high temperature

    M. Nomura

    2017 International Conference on Solid State Devices and Materials (SSDM2017) 

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    Event date: 2017.09.19 - 2017.09.22   Language:English  

  • An observation system for temperature distribution on power semiconductor

    K. Ezaki

    International Symposium on Applied Engineereing and Sciences (SAES2016) 

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    Event date: 2016.12.17 - 2016.12.18   Language:English  

  • Real-time 2D imaging system of temperature distribution inside a power device

    R. Nagao

    International Symposium on Applied Engineereing and Sciences (SAES2016) 

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    Event date: 2016.12.17 - 2016.12.18   Language:English  

  • Combined real-time monitoring system for failure prediction of power devices

    A. Watanabe

    International Symposium on Applied Engineereing and Sciences (SAES2016) 

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    Event date: 2016.12.17 - 2016.12.18   Language:English  

  • Failure analysis of power devices based on real-time monitoring

    A. Watanabe

    26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF2015) 

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    Event date: 2015.10.05 - 2015.10.09   Language:English  

  • Real-time Temperature Monitoring System inside Package of Power Devices

    N. Hirata

    International Symposium on Applied Engineereing and Sciences (SAES2014) 

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    Event date: 2014.12.20 - 2014.12.21   Language:English  

  • Current imbalance measurement among chips in IGBT module with ultra-small PCB probe

    H. Yamaguchi

    International Symposium on Applied Engineereing and Sciences (SAES2014) 

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    Event date: 2014.12.20 - 2014.12.21   Language:English  

  • Current distribution imaging system for power devices using tiny ferrite core sensor

    H. Tomonaga

    International Symposium on Applied Engineereing and Sciences (SAES2014) 

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    Event date: 2014.12.20 - 2014.12.21   Language:English  

  • Numerical design method of multi-turn coil for wireless power transfer circuit based on electrical circuit simulation

    M. Koga

    International Symposium on Applied Engineereing and Sciences (SAES2014) 

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    Event date: 2014.12.20 - 2014.12.21   Language:English  

  • Development of current imbalance measurement technique among chips in IGBT module

    The Papers of Joint Technical Meeting on Electron Devices and Semiconductor Power Converter, IEE Japan  

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    Event date: 2014.10.30 - 2014.10.31   Language:Japanese  

  • High Speed Real-time Temperature Monitoring System inside Power Devices Package Using Infrared Radiation

    N. Hirata

    2014 International Conference on Solid State Devices and Materials (SSDM2014) 

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    Event date: 2014.09.08 - 2014.09.11   Language:English  

  • Real-time failure monitoring system for high power IGBT under acceleration test up to 500 A stress

    A. Watanabe

    The 26th International Symposium on power semiconductor devices and ICS (ISPSD2014) 

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    Event date: 2014.06.15 - 2014.06.19   Language:English  

  • Internal degradation monitoring of power devices during power cycling test

    A. Watanabe

    8th International Conference on Integrated Power Electronics Systems (CIPS2014) 

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    Event date: 2014.02.25 - 2014.02.27   Language:English  

  • Real time degradation monitoring system for high power IGBT module under power cycling test

    A. Watanabe

    24th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF2013) 

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    Event date: 2013.09.30 - 2013.10.04   Language:English  

  • Failure analysis of power semiconductor devices based on real time monitoring

    I. Omura

    International Symposium on Applied Engineereing and Sciences (SAES2013) 

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    Event date: 2013.09.30 - 2013.10.01   Language:English  

  • Real Time Monitoring System for Internal Process to Failure of High Power IGBT

    A. Watanabe

    2013 International Conference on Solid State Devices and Materials (SSDM2013) 

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    Event date: 2013.09.24 - 2013.09.27   Language:English  

  • Real Time Failure Imaging System under Power Stress for Power Semiconductors using Scanning Acoustic Tomography (SAT)

    A. Watanabe

    23rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF2012) 

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    Event date: 2012.10.01 - 2012.10.05   Language:English  

  • Real Time Failure Imaging of Power Semiconductors under Power Stress Using Scanning Acoustic Tomography

    A. Watanabe

    2012 International Conference on Solid State Devices and Materials (SSDM2012) 

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    Event date: 2012.09.25 - 2012.09.27   Language:English  

  • MPCVD法によるダイヤモンド薄膜形成

    中山泰輔

    九州表面・真空研究会2012(兼第17回九州薄膜表面研究会) 

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    Event date: 2012.06.09   Language:Japanese  

  • p型、n型シリコン基板上に形成した多結晶ダイヤモンド薄膜からの電界電子放出特性

    渡邉晃彦

    平成23年度応用物理学会九州支部学術講演会 

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    Event date: 2011.11.27   Language:Japanese  

  • 多結晶ダイヤモンド薄膜の光電子分光

    山田健二

    2011年度日本物理学会北陸支部定例学術講演会 

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    Event date: 2011.11.26   Language:Japanese  

  • Field emission properties of polycrystalline diamond films deposited on p-type and n-type silicon substrates

    A. Watanabe

    22nd European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides (Diamond2011) 

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    Event date: 2011.09.04 - 2011.09.08   Language:English  

  • 準安定原子誘起電子分光法によるNiO(100)表面の電子状態の抽出

    清水洋平

    平成21年度応用物理学会九州支部学術講演会 

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    Event date: 2009.11.22   Language:Japanese  

  • CVD法により作製したカーボンナノチューブの電界放出特性評価

    上村一平

    九州表面・真空研究会2009(兼)第14回九州薄膜表面研究会 

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    Event date: 2009.06.13   Language:Japanese  

  • 準安定原子誘起電子分光法によるNiO(100)表面電子状態の研究

    香月将吾

    九州表面・真空研究会2009(兼)第14回九州薄膜表面研究会 

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    Event date: 2009.06.13   Language:Japanese  

  • 水素終端ダイヤモンド薄膜の表面抵抗と電子放出特性の相関

    中木原佳宏

    九州表面・真空研究会2009(兼)第14回九州薄膜表面研究会 

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    Event date: 2009.06.13   Language:Japanese  

  • Reduction Reaction of Oxidized Ni (110) Surfaces with Hydrogen Studied by Metastable-Induced Electron Spectroscopy

    S. Katsuki

    The 4th Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-4) 

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    Event date: 2008.10.28 - 2008.10.31   Language:English  

  • Thermal and field emission characteristics of polycrystalline diamond coated emitter

    A. Watanabe

    The 8th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-8) 

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    Event date: 2008.10.19 - 2008.10.23   Language:English  

  • 準安定原子誘起電子分光法を用いたO/Ni(110)表面における水素還元・吸着プロセスの研究

    碇智徳

    応用物理学会九州支部と薄膜・表面物理分科会共催による研究会、(兼)第13回九州薄膜表面研究会 

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    Event date: 2008.06.21   Language:Japanese  

  • ダイヤモンド薄膜を形成したフィラメント型エミッタの電子放出

    荒木祥之

    平成19年度応用物理学会九州支部学術講演会 

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    Event date: 2007.12.01 - 2007.12.02   Language:Japanese  

  • 原子状水素を用いた酸化Ni(110)表面還元反応のMIESとLEEDによる研究

    川本卓磨

    平成19年度応用物理学会九州支部学術講演会 

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    Event date: 2007.12.01 - 2007.12.02   Language:Japanese  

  • 準安定ヘリウム原子の脱励起プロセスにおける速度依存性

    山田健二

    日本物理学会北陸支部学術講演会 

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    Event date: 2007.12.01   Language:Japanese  

  • Hydrogen-assisted reduction of oxidized Ni (110) surfaces studied by metastable-induced electron spectroscopy

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    Event date: 2007.11.11 - 2007.11.15   Language:English  

  • 原子状水素を用いた酸化Ni(110)表面還元反応のMIESとLEEDによる研究

    村上和大

    応用物理学会九州支部「新規な薄膜・表面現象とその応用の最前線」(兼)第12回九州薄膜・表面研究会 

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    Event date: 2007.06.16   Language:Japanese  

  • ダイヤモンド・エミッタの試作と電子放出特性

    正清義悟

    応用物理学会九州支部「新規な薄膜・表面現象とその応用の最前線」(兼)第12回九州薄膜・表面研究会 

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    Event date: 2007.06.16   Language:Japanese  

  • 水素によるO/Ni(110)表面還元反応の基板温度依存性-MIESとLEEDによる研究

    村上和大

    平成18年度応用物理学会九州支部学術講演会 

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    Event date: 2006.11.25 - 2006.11.26   Language:Japanese  

  • Si(111)表面上のCa吸着と反応の準安定原子誘起電子分光法による研究

    白水康雄

    平成18年度応用物理学会九州支部学術講演会 

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    Event date: 2006.11.25 - 2006.11.26   Language:Japanese  

  • CVDダイヤモンド表面の水素終端による電子親和力変化:MIES/UPSによる観察

    渡邉晃彦

    平成18年度応用物理学会九州支部学術講演会 

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    Event date: 2006.11.25 - 2006.11.26   Language:Japanese  

  • Hydrogen-assisted reduction of oxidized Ni(110) surfaces studied by metastable-induced electron spectroscopy

    T. Ikari

    The 7th Russia-Japan Seminar on Semiconductor Surfaces (RJSSS-7) 

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    Event date: 2006.09.17 - 2006.09.21   Language:English  

  • Adsorption and reaction of calcium at the Si(111) surface studied by metastable-induced electron spectroscopy

    Y. Shirouzu

    The 7th Russia-Japan Seminar on Semiconductor Surfaces (RJSSS-7) 

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    Event date: 2006.09.17 - 2006.09.21   Language:English  

  • Hydrogen-assisted reduction of the Ni(110)(3×1)-O surface studied by MIES and LEED

    T. Ikari

    The 24th European Conference on Surface Science (ECOSS24) 

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    Event date: 2006.09.04 - 2006.09.08   Language:English  

  • Ca吸着Si(111)表面電子状態のMIESによる研究

    嘉屋旨哲

    応用物理学会九州支部「新規な薄膜・表面とその応用の最前線に関する研究会」(兼)第11回九州薄膜・表面研究会 

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    Event date: 2006.06.17   Language:Japanese  

  • 水素によるO/Ni(110)表面還元反応の基板温度依存性―MIESとLEEDによる研究

    川本卓磨

    応用物理学会九州支部「新規な薄膜・表面とその応用の最前線に関する研究会」(兼)第11回九州薄膜・表面研究会 

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    Event date: 2006.06.17   Language:Japanese  

  • 水素ガスによるO/Ni(110)表面の還元反応:MIESとLEEDによる研究

    松岡利幸

    平成17年度応用物理学会九州支部学術講演会 

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    Event date: 2005.11.26 - 2005.11.27   Language:Japanese  

  • Ca/Si(111)表面反応のMIESとLEEDによる研究

    白水康雄

    平成17年度応用物理学会九州支部学術講演会 

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    Event date: 2005.11.26 - 2005.11.27   Language:Japanese  

  • 水素終端CVDダイヤモンド表面の準安定原子誘起分光法による研究

    渡辺晃彦

    第19回ダイヤモンドシンポジウム 

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    Event date: 2005.11.24 - 2005.11.25   Language:Japanese  

  • Surface structure dependent reaction of Hydrogen-assisted reduction at O/Ni(110) surfaces studied by MIES and LEED

    T. Ikari

    International Symposium on Surface Science and Nanotechnology (ISSS-4) 

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    Event date: 2005.11.16   Language:English  

  • 準安定励起原子を用いた半導体表面の電子状態抽出

    山田健二

    平成17年度電気関係学会北陸支部連合大会 

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    Event date: 2005.09.24   Language:Japanese  

  • Direct observation of surface potential change due to hydrogen termination of CVD diamond surface by metastable-induced electron spectroscopy

    A. Watanabe

    The 23rd European Conference on Surface Science (ECOSS23) 

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    Event date: 2005.09.04 - 2005.09.09   Language:English  

  • Oxidation of a cesium-covered Ni(110) surface studied by a metastable-induced electron spectroscopy

    T. Ikari

    13th International Congress on Thin Films/ 8th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures 

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    Event date: 2005.06.21   Language:English  

  • 水素曝露されたO/Ni(110)表面のMIESによる表面電子状態抽出

    川原宏樹

    応用物理学会九州支部「薄膜・表面の新規な現象とその応用の最前線に関する研究会」(兼)第10回九州薄膜・表面研究会 

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    Event date: 2005.06.18   Language:Japanese  

  • 水素原子吸着によるダイヤモンド表面ポテンシャルの変化:UPS/MIESの同時計測による研究

    西岡信介

    応用物理学会九州支部「薄膜・表面の新規な現象とその応用の最前線に関する研究会」(兼)第10回九州薄膜・表面研究会 

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    Event date: 2005.06.18   Language:Japanese  

  • Si(100)表面上のCa吸着とCaシリサイド薄膜形成プロセス

    吉田亮

    応用物理学会九州支部「薄膜・表面の新規な現象とその応用の最前線に関する研究会」(兼)第10回九州薄膜・表面研究会 

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    Event date: 2005.06.18   Language:Japanese  

  • 水素終端CVDダイヤモンド表面電子状態の準安定原子誘起電子分光法による研究

    渡邉晃彦

    第1回「水素をモデレータとしたナノ電子デバイス要素技術の開発および応用研究」プロジェクト研究報告会 

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    Event date: 2005.05.27   Language:Japanese  

  • 酸素吸着Ni(110)表面の水素による還元反応:準安定原子誘起分光と低速電子線回折による研究

    碇智徳

    第1回「水素をモデレータとしたナノ電子デバイス要素技術の開発および応用研究」プロジェクト研究報告会 

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    Event date: 2005.05.27   Language:Japanese  

  • Influences of the incident He* velocity on the metastable de-excitation process at surfaces and the resultant electron spectra

    T. Ikari

    15th International workshop on inelastic ion surface collisions 

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    Event date: 2004.10.17 - 2004.10.22   Language:English  

  • Metastable-induced electron spectroscopy study of hydrogen terminated CVD diamond surface

    A. Watanabe

    The 6th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-6) 

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    Event date: 2004.10.10 - 2004.10.17   Language:English  

  • Adsorption of Ca on the Si(111) surface and its reaction with the Si substrate studied by AES and MIES

    T. Inoue

    The 6th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-6) 

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    Event date: 2004.10.10 - 2004.10.17   Language:English  

  • ダイヤモンド-金属基板界面における電子注入機構

    渡邉晃彦

    応用物理学会九州支部「機能性薄膜の作製と新規表面・界面現象に関するワークショップ」(兼)第9回九州薄膜・表面研究会 

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    Event date: 2004.06.19   Language:Japanese  

  • Si(111)面上でのカルシウムシリサイド薄膜成長様式の研究

    井上高志

    応用物理学会九州支部「機能性薄膜の作製と新規表面・界面現象に関するワークショップ」(兼)第9回九州薄膜・表面研究会 

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    Event date: 2004.06.19   Language:Japanese  

  • Observation of electron field emission patterns from B-doped diamond films

    K. Kobashi

    The 9th International Conference on New Diamond Science and Technology (ICNDST-9) 

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    Event date: 2004.03.26 - 2004.03.29   Language:English  

  • 表面スピン電子密度分析のためのヘリウム準安定原子ビームのスピン偏極化

    亀井浩太

    平成15年度物理学会九州支部例会 

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    Event date: 2003.11.29   Language:Japanese  

  • 準安定原子脱励起スペクトルの表面ーHe*相対速度依存性

    内野直喜

    平成15年度物理学会九州支部例会 

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    Event date: 2003.11.29   Language:Japanese  

  • Field emission properties of diamond particles: Electron injection into the conduction band by tunneling at thin insulating layer

    A. Watanabe

    Applied Diamond Conference/Frontier Carbon Technology Conference 2003 (ADC/FCT2003) 

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    Event date: 2003.08.18 - 2003.08.21   Language:English  

  • ダイヤモンド粒子からの電界電子放出機構

    渡邉晃彦

    第8回九州薄膜表面研究会 

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    Event date: 2003.07.06   Language:Japanese  

  • ダイヤモンド粒子の伝導帯への電子注入とその電界電子放出特性

    渡邉晃彦

    第50回応用物理学会学術講演会 

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    Event date: 2003.03.27 - 2003.03.30   Language:Japanese  

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Industrial Property

  • 半導体検査装置

    大村一郎、渡邉晃彦、附田正則

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    Application no:特願2015-158228   Date applied:2015.08.10

    Patent/Registration no:特許第6718626号  Date registered:2020.06.17 

Lectures

  • 超高耐圧ダイヤモンド・パワー半導体の実現に向けて

    日本技術士会九州本部北九州地区支部支部CPD  2021.09 

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    Event date: 2021.09.11   Language:Japanese   Presentation type:Invited lecture   Country:Japan  

  • パワー半導体の高信頼化を促進するイメージング技術およびリアルタイム・モニタリング技術

    電気学会パワーデバイス・パワーIC高性能化技術調査専門委員会  2019.12 

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    Language:Japanese   Presentation type:Discussion meeting  

  • パワー半導体の高信頼化を促進するリアルタイム・モニタリング

    第164回産学交流サロン「ひびきサロン」、先端パワーエレクトロニクス研究のオープンイノベーション型産学連携  2018.03 

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    Presentation type:Others   Venue:北九州学研都市、産学連携センター  

  • リアルタイムモニタリングによる故障メカニズム特定と故障予測の可能性

    第8回次世代ユビキタス・パワーエレクトロニクスのための信頼性科学ワークショップ  2018.02 

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    Presentation type:Invited lecture  

  • パワーデバイスの故障予測を可能にするモニタリング技術

    JST新技術説明会  2017.12 

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    Presentation type:Others   Venue:JST東京本部別館1Fホール  

  • ダイヤモンドの電子デバイス応用

    九州工業大学次世代パワーエレクトロニクス研究センター 第1回 研究会  2017.10 

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    Presentation type:Others  

  • リアルタイム・シミュレーション:赤外線カメラと同期したデバイス内部温度解析

    NPERC-J 第2回ワークショップ:「新しいグリーンエレクトロニクスの創生を目指して」NPERC-J が描く2025 年のパワーエレクトロニクス  2015.11 

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    Presentation type:Others  

  • パワーデバイス用高信頼化評価技術:リアルタイム故障モニタリングシステム

    北九州市学研都市第14回産学連携フェア、産学官連携研究開発成果発表会  2014.10 

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    Presentation type:Invited lecture  

  • パワーデバイス故障の原因に迫る新しい評価技術

    北九州市学研都市第14回産学連携フェア、産総研・九工大・北九州市によるセミナー  2014.10 

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    Presentation type:Others  

  • パワーエレクトロニクスのユビキタス化を支える故障メカニズム特定技術

    第5回次世代ユビキタス・パワーエレクトロニクスのための信頼性科学ワークショップ  2014.01 

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    Presentation type:Invited lecture  

  • パワーデバイス高信頼性技術

    北九州市学研都市第13回産学連携フェア、産総研・九工大・北九州市によるセミナー  2013.10 

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    Presentation type:Others  

  • その他の環境エレクトロニクス研究紹介

    北九州市学研都市第12回産学連携フェア、産総研・九工大・北九州市によるセミナー  2012.10 

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    Presentation type:Others  

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Grants-in-Aid for Scientific Research

  • 超音波による接合温度分布計測:パワー半導体高信頼化の革新的評価技術

    Grant number:15K05944  2015.04 - 2018.03   基盤研究(C)

Other Research Activities

  • イノベーション・ジャパン2018

    2018.08

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    寿命予測・故障予測を可能にするパワー半導体検査装置

  • 産学パートナーシップ創造展

    2016.08

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    パワーデバイス高信頼化技術 複合型リアルタイムモニタリングシステム

Activities of Academic societies and Committees

  • 産業応用工学会   全国大会2023(現地担当委員長)  

    2022.09 - 2023.09

  • 産業応用工学会   全国大会2022(出版委員長)  

    2021.09 - 2022.09

  • 産業応用工学会   理事  

    2019.04

  • 産業応用工学会   全国大会2019(プログラム委員長)  

    2018.09 - 2019.09

  • 産業応用工学会   監事  

    2018.04 - 2019.03

  • 産業応用工学会   全国大会2018 (現地担当委員長)  

    2017.09 - 2018.09

  • 産業応用工学会   全国大会2017 (出版委員長)  

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