WATANABE Akihiko

写真a

Title

Associate Professor

Laboratory

1-1 Sensui-cho, Tobata-ku, Kitakyushu-shi, Fukuoka

Research Fields, Keywords

Power Semiconductor Devices, Power Electronics, Surface Science

Undergraduate Education 【 display / non-display

  • 1994.03   Kyushu Institute of Technology   Faculty of Engineering   Graduated   JAPAN

Post Graduate Education 【 display / non-display

  • 1999.03  Kyushu Institute of Technology  Graduate School, Division of Engineering  Doctoral Program  Accomplished Credits for Doctoral Program  JAPAN

Degree 【 display / non-display

  • Kyushu Institute of Technology -  Doctor of Engineering  1999.06

Biography in Kyutech 【 display / non-display

  • 2020.04
    -
    Now

    Kyushu Institute of TechnologyGraduate School of Life Science and Systems Engineering   Department of Biological Functions Engineering   Associate Professor  

  • 2019.12
    -
    2020.03

    Kyushu Institute of TechnologyFaculty of Engineering   Department of Electrical Engineering and Electronics   Associate Professor  

  • 2008.04
    -
    2019.11

    Kyushu Institute of TechnologyFaculty of Engineering   Department of Electrical Engineering and Electronics   Assistant Professor  

Biography before Kyutech 【 display / non-display

  • 1999.04
    -
    2003.03

      Researcher   JAPAN

  • 1999.04
    -
    2003.03

      Researcher   JAPAN

Academic Society Memberships 【 display / non-display

  • 2018.08
    -
    Now
     

    Japan New Diamond Forum  JAPAN

 

Publications (Article) 【 display / non-display

  • Infrared image correlation for thermal stress analysis of power devices

    Watanabe A., Masuda Y., Omura I.

    Microelectronics Reliability    100-101   2019.09  [Refereed]

     View Summary

    © 2019 Elsevier Ltd Thermal stress analysis is indispensable to improve the reliability of power devices. We propose a technique to observe a temperature distribution and a thermal strain simultaneously for thermal stress analysis of power devices. A temperature distribution is measured by an infrared (IR) camera and a thermal strain is measured by a digital image correlation (DIC) with IR images under a power cycling test. To apply DIC to IR images, we propose techniques to make a random pattern on the surface which can be recognized by IR camera even if a surface temperature is changed. This technique realises an observation with completely same field of view even in a localized area on power devices. This method provides an experimental means to verify simulation results of thermal stress analysis.

    DOI Scopus

  • Convolutional neural network (CNNs) based image diagnosis for failure analysis of power devices

    Watanabe A., Hirose N., Kim H., Omura I.

    Microelectronics Reliability    100-101   2019.09  [Refereed]

     View Summary

    © 2019 Elsevier Ltd An image diagnosis by deep learning was applied to failure analysis of power devices. A series of images during a process to failure by power cycling test was used for this method. The images were obtained by a scanning acoustic microscopy of our real-time monitoring system. An image classifier was designed based on a convolutional neural network (CNNs). A developed classifier successfully diagnosed input image into a normal device and an abnormal device. The accuracy of classification was improved by introducing a pre-training and an overlapping pooling into the system. A technique to extract a feature related a failure is essential for the failure analysis based on the real-time monitoring and the deep learning is one likely candidate for it.

    DOI Scopus

  • A power cycling degradation inspector of power semiconductor devices

      88-90   458 - 461   2018.09  [Refereed]

     View Summary

    © 2018 Elsevier Ltd We have proposed a failure analysis based on a real-time monitoring of power devices under acceleration test. The real-time monitoring enables to visualize the mechanism that leads to a failure by obtaining the change of structure inside the device in time domain with high spatial resolution. In this paper, we presented a new analytical instrument based on the proposed failure analysis concept. The essential functions of this instrument are (1) power stress control, (2) non-destructive inspection and (3) water circulation. An original design power-stress control system and a customized scanning acoustic microscopy system enable us a non-destructive inspection inside the device under power cycling test. This instrument exhibits a great advantage especially to monitor failure mechanisms without having to open the module.

    DOI Scopus

  • Real-time imaging of temperature distribution inside a power device under a power cycling test

      76-77   490 - 494   2017.09  [Refereed]

     View Summary

    © 2017 Elsevier Ltd The analysis of temperature distribution in a power device package is essential to increase the reliability of power devices, because the temperature swing during the operation creates mechanical stress at the interfaces between these materials. However, the temperature distribution is difficult to obtain under operating conditions because of the limitation in the use of non-destructive methods to measure the inside temperature of the device. In this paper, we propose a method of real-time imaging of temperature distribution inside a DUT. This method is based on a “real-time simulation”. The real-time simulation was realized by combining surface temperature monitoring and high-speed thermal simulation. The thermal simulator calculates temperature distribution inside the package by using the monitored surface temperature as a parameter. We demonstrate our system with a TO-220 package device under a power cycling test. The system indicated a temperature distribution change in the package with a frame rate of less than 1 s and the temperature difference at the Si chip was within 2 °C by a comparison with that estimated from forward voltage drop.

    DOI Scopus

  • Failure analysis of power devices based on real-time monitoring

      55 ( 9-10 ) 2032 - 2035   2015.08  [Refereed]

    DOI Scopus

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Conference Prsentations (Oral, Poster) 【 display / non-display

  • Development of Ultra-high-speed Chip Surface Temperature Distribution Imaging System for High Robustness Design of Power Semiconductors

    2019.11  -  2019.11 

  • 薄層SOIパワーn MOSFETの高温でのACホットキャリア効果

    有吉和麻

    (第72回)電気・情報関係学会九州支部連合大会  (北九州市九州工業大学戸畑キャンパス)  2019.09  -  2019.09 

  • 高温におけるpチャネル薄層SOIパワーMOSFETのホットキャリア効果

    金田宜政

    (第72回)電気・情報関係学会九州支部連合大会  (北九州市九州工業大学戸畑キャンパス)  2019.09  -  2019.09 

  • DC Hot carrier effect of a thin-film SOI Power p-MOSFET at high temperature

    6th International Symposium on Applied Engineereing and Sciences (SAES2018)  2018.12  -  2018.12 

  • Real-Time Monitoring for Improvement of Reliability of Power Devices

    6th International Symposium on Applied Engineereing and Sciences (SAES2018)  2018.12  -  2018.12 

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Lectures 【 display / non-display

  • パワー半導体の高信頼化を促進するイメージング技術およびリアルタイム・モニタリング技術

    電気学会パワーデバイス・パワーIC高性能化技術調査専門委員会   2019.12.17 

  • パワー半導体の高信頼化を促進するリアルタイム・モニタリング

    第164回産学交流サロン「ひびきサロン」、先端パワーエレクトロニクス研究のオープンイノベーション型産学連携 ( 北九州学研都市、産学連携センター )  2018.03.02 

  • リアルタイムモニタリングによる故障メカニズム特定と故障予測の可能性

    第8回次世代ユビキタス・パワーエレクトロニクスのための信頼性科学ワークショップ   2018.02.09 

  • パワーデバイスの故障予測を可能にするモニタリング技術

    JST新技術説明会 ( JST東京本部別館1Fホール )  2017.12.12 

  • ダイヤモンドの電子デバイス応用

    九州工業大学次世代パワーエレクトロニクス研究センター 第1回 研究会   2017.10.12 

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