Faculty Profiles - TERAI Yoshikazu

Papers - TERAI Yoshikazu

Division display21 - 40 of about 178／ All the affair displays >>

Growth of p-type β-FeSi2 polycrystalline films by RF magnetron sputtering Reviewed

Shuya Ikeda, Kazuya Ogi, Tetsu Hattori, Takahiko Higashi, and Yoshikazu Terai

Japanese Journal of Applied Physics : Conference Proceedings 5 011204/1 - 011204/4 2017.05

Polarized Raman spectra of BaSi2 epitaxial film grown by molecular beam epitaxy Reviewed

Yoshikazu Terai, Haruki Yamaguchi, Hiroaki Tsukamoto, Naoki Murakoso, Motoki Iinuma, and Takashi Suemasu

Japanese Journal of Applied Physics 56 05DD02/1 - 05DD02/4 2017.04

Structural and electrical properties of β-FeSi2 polycrystalline films with low electron density Invited Reviewed

Yoshikazu Terai, Takahiko Higashi, Tetsu Hattori, Kazuya Ogi, and Shuya Ikeda

Japanese Journal of Applied Physics 56 05DD03/1 - 05DD03/5 2017.04

A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm Reviewed

A. V. Shevlyagin, D. L. Goroshko, E. A. Chusovitin, S. A. Balagan, S. A. Dotcenko, K. N. Galkin, N. G. Galkin, T. S. Shamirzaev, A. K. Gutakovskii, A. V. Latyshev, M. Iinuma, and Y. Terai

Journal of Applied Physics 121 ( 11 ) 113101/1 - 113101/9 2017.03

Ion channeling measurements of β-FeSi2 films epitaxially grown on Si(111) and their analysis by multiple scattering theory Reviewed

Fuchi Masaya, Arima Mikihiro, Narumi Kazumasa, Terai Yoshikazu, Maeda Yoshihito

JJAP Conference Proceedings ( The Japan Society of Applied Physics ) 5 ( 0 ) 011104 - 011104 2017.01

Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal)

We have evaluated β-FeSi2 (110), (101) planes epitaxially grown on Si(111) by using ion beam analysis. Unexpected large displacements were deduced from analysis based on single ion scattering. We have discussed multiple ion scattering caused inside the film and obtained the comparatively reasonable atomic displacement of Δx = 0.04 nm that is close to one sixth of one step height of six domains stacking on the (111) planes. This result suggests that multiple scattering may be attributed to the atomic displacement due to the domain stacking faults.

DOI： 10.56646/jjapcp.5.0_011104

CiNii Research

Dependence of direct transition energy on growth temperature in β-FeSi2 epitaxial films Reviewed

Iinuma Motoki, Tsukamoto Hiroaki, Murakoso Naoki, Yamaguchi Haruki, Terai Yoshikazu

JJAP Conference Proceedings ( The Japan Society of Applied Physics ) 5 ( 0 ) 011106 - 011106 2017.01

Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal)

Direct transition energy (Eg) of β-FeSi2/Si(111) epitaxial films grown at different growth temperatures (Ts) was investigated by photoreflectance (PR) measurements. In Raman spectra, the wavenumber of Ag-mode in Fe–Fe and Si–Si vibrations shifted to higher wavenumber with decrease of Ts. The estimated Si/Fe composition ratio of the epitaxial layer became small (Si-poor) in the films grown at lower Ts. In PR spectra, Eg shifted to higher energy with decrease of Ts. These results show that the modification of electronic structure by a strain induced at β-FeSi2/Si hetero-interface is suppressed by an increase of Si vacancies in β-FeSi2.

DOI： 10.56646/jjapcp.5.0_011106

CiNii Research

Growth of p-type β-FeSi2 polycrystalline films by RF magnetron sputtering Reviewed

Ikeda Shuya, Ogi Kazuya, Hattori Tetsu, Higashi Takahiko, Terai Yoshikazu

JJAP Conference Proceedings ( The Japan Society of Applied Physics ) 5 ( 0 ) 011204 - 011204 2017.01

Authorship：Last author,　Corresponding author Language：English Publishing type：Research paper (scientific journal)

β-FeSi2 polycrystalline films with p-type conduction were grown by RF magnetron sputtering using a B-doped p+-Si target with Fe chips. The hole density and mobility were 2 × 1017 cm−3 and 71 cm2 V−1 s−1 at RT, respectively. The acceptor levels formed by the B-doping were obtained to be 10 and 245 meV. In the temperature dependence of electrical properties, the p-type β-FeSi2 film showed the impurity-band conduction at 77–350 K.

DOI： 10.56646/jjapcp.5.0_011204

CiNii Research

Time of Fright method for Work function measurement Reviewed

Muto Masao, Tsuno Katsushige, Yonezawa Takeshi, Terai Yoshikazu, Nishiyama Hiroshi

Abstract of annual meeting of the Surface Science of Japan ( The Japan Society of Vacuum and Surface Science ) 36 ( 0 ) 337 2016.01

Analysis of multiple ion scattering in beta-FeSi2 films with equivalent domains epitaxially grown on Si(111) Reviewed

Fuchi Masaya, Arima Mikihiro, Terai Yoshikazu, Narumi Kazumasa, Maeda Yoshihito

Abstract of annual meeting of the Surface Science of Japan ( The Japan Society of Vacuum and Surface Science ) 36 ( 0 ) 134 2016.01

Effects of lattice deformations on Raman spectra in β-FeSi2 epitaxial films Reviewed

Yoshikazu Terai, Haruki Yamaguchi, Hiroaki Tsukamoto, Tetsu Hattori, and Takahiko Higashi

Japanese Journal of Applied Physics : Conference Proceedings 3 011109-1 - 011109-5 2015.06

Time-resolved photoluminescence properties of ion-beam-synthesized β-FeSi2 and Si-implanted Si Invited Reviewed

Yoshikazu TERAI and Yoshihito MAEDA

Japanese Journal of Applied Physics 54 ( 7 ) 07JB05-1 - 07JB05-5 2015.05

In situ Eu doping into Al<inf>x</inf>Ga<inf>1-x</inf>N grown by organometallic vapor phase epitaxy to improve luminescence properties Reviewed

Koizumi A., Kawabata K., Lee D.G., Nishikawa A., Terai Y., Ofuchi H., Honma T., Fujiwara Y.

Optical Materials 41 75 - 79 2015.01

Foreword: Semiconducting silicides green technology Reviewed

Terai Y.

Japanese Journal of Applied Physics 54 ( 7 ) 2015.01

Sputtering-assisted metal-organic chemical vapor deposition of Yb-doped ZnO for photonic conversion in Si solar cells Reviewed

11 ( 7-8 ) 1292 - 1295 2014.01

Conduction properties of β-FeSi2 epitaxial films with low carrier density Reviewed

Terai Y., Suzuki N., Noda K., Fujiwara Y.

Physica Status Solidi (C) Current Topics in Solid State Physics 10 ( 12 ) 1696 - 1698 2013.12

Formation of Eu3+ luminescent centers in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition Reviewed

52 ( 11 PART 1 ) 2013.11

Luminescence properties of Eu-doped GaN grown on GaN substrate Reviewed

52 ( 8 PART 2 ) 2013.08

Control of Eu luminescence centers by codoping of Mg and Si into Eu-doped GaN Reviewed

52 ( 8 PART 2 ) 2013.08

Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy Reviewed

102 ( 14 ) 2013.04

Growth condition dependence of Ge-doped β-FeSi2 epitaxial film by molecular beam epitaxy Reviewed

Noda K., Terai Y., Fujiwara Y.

Journal of Crystal Growth 378 376 - 380 2013.01

　 PREV - NEXT 　

<TERAI Yoshikazu>

Papers - TERAI Yoshikazu