Papers - TERAI Yoshikazu
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Exciton spin dynamics in CdTe/ZnTe quantum structures Reviewed
248 ( 2 ) 389 - 392 2011.02
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Recent progress in rare-earth-doped semiconductors Invited Reviewed
Fujiwara Y., Nishikawa A., Terai Y.
2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010 2010.12
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Growth temperature dependence of EU-doped GaN grown by organometallic vapor phase epitaxy Reviewed
59 ( 9 ) 671 - 674 2010.09
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Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition Reviewed
42 ( 10 ) 2834 - 2836 2010.09
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Photoluminescence properties of Eu-Doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition Reviewed
59 ( 9 ) 690 - 693 2010.09
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Photoluminescence properties of Er-doped β-FeSi2 grown by ion implantation Reviewed
Terai Y., Tsuji T., Noda K., Fujiwara Y.
Physica E: Low-Dimensional Systems and Nanostructures 42 ( 10 ) 2846 - 2848 2010.09
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Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy Reviewed
7 ( 7-8 ) 2040 - 2042 2010.08
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Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy Reviewed
97 ( 5 ) 2010.08
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Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy Reviewed International journal
Konaka Y., Ono K.I., Terai Y., Fujiwara Y.
Journal of Crystal Growth 312 ( 14 ) 2056 - 2059 2010.07
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Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE Reviewed
207 ( 6 ) 1397 - 1399 2010.06
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Improved Eu luminescence properties in eu-doped gan grown on gan substrates by organometallic vapor phase epitaxy Reviewed
49 ( 4 PART 1 ) 0480011 - 0480012 2010.04
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Anisotropic spin dynamics of confined electrons in CdTe/ZnTe quantum structures Reviewed
81 ( 12 ) 2010.03
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Present status and prospects of rare-earth-doped semiconductors Reviewed
FUJIWARA Yasufumi, TERAI Yoshikazu, NISHIKAWA Atsushi
79 ( 1 ) 25 - 31 2010.01
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Optical properties of Eu-implanted GaN and related-alloy semiconductors Reviewed
Nishikawa A., Kasai H., Kawasaki T., Terai Y., Fujiwara Y.
Journal of Physics: Conference Series 191 2009.12
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Luminescence properties in Er, O-codoped GaAs light-emitting devices with double excitation mechanism Reviewed
1111 143 - 148 2009.11
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Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor deposition Reviewed
27 ( 5 ) 2248 - 2251 2009.10
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Epitaxial growth of Al-doped β-FeSi2on Si(111) substrate by reactive deposition epitaxy Reviewed
Terai Y., Hashimoto S., Noda K., Fujiwara Y.
Physica Status Solidi (C) Current Topics in Solid State Physics 6 ( 6 ) 1488 - 1491 2009.09
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Development of new-type 1.5 μm light-emitting devices based on Er,O-codoped GaAs Reviewed
Fujiwara Y., Terai Y., Nishikawa A.
Journal of Physics: Conference Series 165 2009.07
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Metaloraganic chemical vapor deposition of Er-doped ZnO thin films with 1.54 μm photoluminescence Reviewed
Yamaoka K., Terai Y., Yamaguchi T., Ngo H., Gregorkiewicz T., Fujiwara Y.
Journal of Physics: Conference Series 165 2009.07
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Luminescence properties of Eu-implanted GaN-based semiconductors Reviewed
Kasai H., Nishikawa A., Terai Y., Fujiwara Y.
Journal of Physics: Conference Series 165 2009.07