Papers - TERAI Yoshikazu
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Advanced materials design of rare-earth-doped semiconductors by organometallic vapor phase epitaxy Reviewed
261 - 272 2013.01
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Concentration quenching in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition Reviewed
Tsuji T., Terai Y., Kamarudin M.H.B., Yoshida K., Fujiwara Y.
Journal of Luminescence 132 ( 12 ) 3125 - 3128 2012.12
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Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy Reviewed
Sasaki H., Hisaka T., Kadoiwa K., Terai Y., Fujiwara Y.
IEICE Electronics Express 9 ( 20 ) 1592 - 1597 2012.11
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Hybrid mesoporous-silica materials functionalized by Pt<sup>II</sup> complexes: Correlation between the spatial distribution of the active center, photoluminescence emission, and photocatalytic activity Reviewed
18 ( 36 ) 11371 - 11378 2012.09
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Photoluminescence properties of Sm-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition Reviewed
358 ( 17 ) 2443 - 2445 2012.09
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Effect of residual impurities on transport properties of β-FeSi 2 epitaxial films grown by molecular beam epitaxy Reviewed
Terai Y., Yoneda K., Noda K., Miura N., Fujiwara Y.
Journal of Applied Physics 112 ( 1 ) 2012.07
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Eu luminescence center created by Mg codoping in Eu-doped GaN Reviewed
Lee D.G., Nishikawa A., Terai Y., Fujiwara Y.
Applied Physics Letters 100 ( 17 ) 2012.04
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Optical Properties in Eu-doped GaN by Organometallic Vapor Phase Epitaxy and its Application to GaN-based Red Light-emitting Diodes Reviewed
NISHIKAWA Atsushi, TERAI Yoshikazu, FUJIWARA Yasufumi
Journal of the Japanese Association of Crystal Growth 38 ( 4 ) 270 - 273 2012.01
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Growth condition dependence of direct bandgap in β-FeSi2 epitaxial films grown by molecular beam epitaxy Reviewed
23 5 - 8 2012.01
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Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy Invited Reviewed
Nishikawa A., Furukawa N., Lee D.G., Kawabata K., Matsuno T., Terai Y., Fujiwara Y.
Materials Research Society Symposium Proceedings 1342 9 - 14 2012.01
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Recent progress in red light-emitting diodes with Eu-Doped GaN Reviewed
2 721 - 724 2011.12
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Improvement of crystalline quality in GaAs layer grown on thermal cyclic annealed SOS Reviewed
60 ( 11 ) 998 - 1003 2011.11
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Bandgap modifications by lattice deformations in β-FeSi2 epitaxial films Invited Reviewed
Terai Y., Noda K., Yoneda K., Udono H., Maeda Y., Fujiwara Y.
Thin Solid Films 519 ( 24 ) 8468 - 8472 2011.10
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Preface Reviewed
Maeda Y., Terai Y., Homewood K.P., Takarabe K., Yamaguchi K., Suzuki M., Sadoh T., Nakamura Y.
Thin Solid Films 519 ( 24 ) 2011.10
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Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111) Reviewed
519 ( 24 ) 8461 - 8467 2011.10
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Photoluminescence and photoreflectance studies in Si/β-FeSi 2/Si(001) double heterostructure Reviewed
Yoneda K., Terai Y., Noda K., Miura N., Fujiwara Y.
Physics Procedia 11 185 - 188 2011.06
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Temperature dependence of direct transition energies in β-FeSi 2 epitaxial films on Si(111) substrate Reviewed
Noda K., Terai Y., Yoneda K., Fujiwara Y.
Physics Procedia 11 181 - 184 2011.06
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Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy Reviewed
33 ( 7 ) 1071 - 1074 2011.05
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Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy Reviewed
208 ( 2 ) 445 - 448 2011.02
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Photoluminescence properties of Eu3+ ions in Eu-doped ZnO grown by sput- tering-assisted metalorganic chemical vapor deposition Reviewed
Terai Y., Yoshida K., Kamarudin M.H., Fujiwara Y.
Physica Status Solidi (C) Current Topics in Solid State Physics 8 ( 2 ) 519 - 521 2011.02